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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5568EUF Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5568EUF#TR Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LTC5508ESC6-#PBF Linear Technology RF/Microwave Detector, 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX, PLASTIC, SC6, SC-70, 6 PIN
LT5534ESC6PBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LT5534ESC6TRPBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LT1086CT-3.3DWF#MILDWF Linear Technology LT1086 - 1.5A Low Dropout Positive Regulators Adjustable and Fixed 2.85V, 3.3V, 3.6V, 5V, 12V; Pins: 0; Temperature Range: 0°C to 70°C

microwave fet IC Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: -pin minimold 20-pin SSOP CD-ROM X13769XJ2V0CD00 11-2 RF and Microwave Devices IC s IQ , X13769XJ2V0CD00 11-3 RF and Microwave Devices IC s Up Converter (µ PC×××× ) Part Number Applications , CD-ROM X13769XJ2V0CD00 11-4 RF and Microwave Devices IC s Prescaler (µ PB×××× , µ PG , ­pin SSOP K-12, 8-pin ceramic CD-ROM X13769XJ2V0CD00 11-5 RF and Microwave Devices IC s , 11-7 RF and Microwave Devices IC s PLL Synthesizer (µ PB×××× ) Part Number Functions PLL


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
ely transformers

Abstract: No abstract text available
Text: number of successful monolithic microwave designs, including many first-pass M M IC designs, meeting all , microwave product family is a line of standard M M IC s. These M M IC s were designed for military , SUCCESSFUL CIRCUITS Texas Instruments engineers have been designing M M IC s since 1 9 7 9 and have created , characteristics available from the standard monolithic microwave product family are shown in Figure 1. TYPICAL , range of microwave circuits have been fabricated on GaAs at Tl. Both narrowband double-balanced and


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Not Available

Abstract: No abstract text available
Text: MwT-0618S-7G1/0618Z-7G 1 6.0-18.0 GHz BALANCED AM PLIFIER M ODULE MICROWAVE TECHNOLOGY 4268 SolarWay Fremont, CA 94538 510-651-6700 FAX510-651 -2208 TY P IC A L SP EC IFIC ATIO N S @ 25°C JUL , mA @ +8V USES TWO MwT-7 GaAs FET DEVICES 5 TYPICAL SMALL SIGNAL GAM (dB) 90 HU 7.0 TYPICAL 10 , \ 18 10 12 14 Frequency (GHz) ELEC TR IC AL SP EC IFIC ATIO N S (Ta=25°C ) SYMBOL FREQ SSG , Isolation Power Supply Voltage Small Signal Module Current Thermal Resistance Including FET * UNITS GHz


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PDF MwT-0618S-7G1/0618Z-7G FAX510-651 MWAVS057 -M54-
1999 - 1658 NEC

Abstract: SW SPDT FRS transceiver upc8112tb SW-SPDT 2SC5288 NE5510279A RF basics NE52418 discrete LNA D
Text: LDMOS FET µPG158TB GaAs SW IC , 6-pin Super Minimold µPG2008TK SPDT SW GaAs MMIC , RF AND MICROWAVE DEVICES SELECTION GUIDE - APPLICATION SYSTEM - April 2003 This document covers "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and " Microwave GaAs Devices , . 7 2. EXPLANATION OF THE RF AND MICROWAVE DEVICES , . 40 Selection Guide PX10020EJ08V0PF 5 1. INTRODUCTION The Microwave Devices are used


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PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver upc8112tb SW-SPDT 2SC5288 NE5510279A RF basics NE52418 discrete LNA D
1963 - sot-89 BV SMD TRANSISTOR MARKING CODE

Abstract: bgu7051 MS1051 BLF578 fm band 2SK163 BLF278 mosfet HF applications BFU610F 100MHz SMD RF Mixer TAN250A PTFA 210301E - 30 W
Text: RFBFQ33 1989 ­ 1992 ­ 1996 ­ 2 GHz LDMOS 2004 ­ Gen5 LDMOS 2006 ­ 2007 ­ IC : TFF1004HN 2008 ­ , 68 3.4 RF IC , 4.4.1 IC , MMICSiGe:C _ _ 87 4.4.2 RF , Function Oscillator Function Product MMIC Package SiGe:C MMIC Product RF IC Package SiGe:C IC Product RF transistor SOT617 SOT616 Package Wideband transistor SiGe:C


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PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 BLF578 fm band 2SK163 BLF278 mosfet HF applications BFU610F 100MHz SMD RF Mixer TAN250A PTFA 210301E - 30 W
2011 - MPF102 spice model

Abstract: bgu7041 toshiba smd marking code transistor IB3135 BIT 3713 BLF4G08LS-160 x-band mmic core chip BLF4G08LS-160A BLF278 mosfet HF amplifier TEA6848H
Text: _ 1.6.3 RF Microwave furnace application , 38 1.7.1 Microwave products for avionics, L- and S-band radar applications _ , 54 2.3.4 Low noise LO generators for microwave & mmWave radios , 61 2.5.4 Buidling on decades of innovation in microwave and radar , 82 3.4.2 Low noise LO generators for VSAT and general microwave applications


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PDF te121 MPF102 spice model bgu7041 toshiba smd marking code transistor IB3135 BIT 3713 BLF4G08LS-160 x-band mmic core chip BLF4G08LS-160A BLF278 mosfet HF amplifier TEA6848H
2009 - filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 AX 2008 lqfp48 BLF7G10-300p GP 809 DIODE MPAL2731M15 BF1118 bgu7051 BB 505 Varicap Diode
Text: ­ Doherty 2007 ­ IC TFF1004HN 2008 ­ JESD204A 2009 ­ FM1kW (BLF578) (88108 MHz) 2009 ­ SiGe , 4.4.1 IC MMICSiGe 87 4.4.2 F , Function Product MMIC Package SiGe:C MMIC Product RF IC Package SiGe:C IC Product RF , Function Synth Function Buffer RF IC SiGe:C IC Type SOT616 TFF1003HN TFF1007HN , (variable gain amplifier) Function MPA (medium power amplifier) Product RF IC Package SiGe


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PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 AX 2008 lqfp48 BLF7G10-300p GP 809 DIODE MPAL2731M15 BF1118 bgu7051 BB 505 Varicap Diode
2010 - circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna BF256B spice model maxim DVB MRF6V2300N 300w power amplifier circuit diagram
Text: imaging, microwave furnaces and Mobile platforms. And we describe thoroughly new developments in our main , and cost structures with internal 8-inch IC fabs in the Netherlands and Singapore and assembly plants , Industry's first fully integrated, silicon-based IC solution for satellite: TFF1004HN 2008 ­ High speed , 12 1.2 Microwave & mmWave , _ 38 _ 1.6.8 F Microwave furnace application


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Not Available

Abstract: No abstract text available
Text: Fremont, CA 94538 510-651-G700 FAX510-651-2206 MICROWAVE TECHNOLOGY TYPICAL SPECIFICATIO N S @ 25 , Small Signal Module Current Thermal Resistance Including FET * UNITS GHz dB ±dB dB/# C dBm dBm dB/*C , 7.9 196.0 ao 60.0 &1 80.0 * When calculating Tch, use FET Vds = 5.0 volts and FET Ids = 30 mA. 10/92 -M17- ÂdÆ M ic r o W a v c À iff ic h n o l o o y T C O O O) TCM , alumina substrates and 10 mil copper FET ridge are brazed onto the 25 mil carrier using AuGe preform


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PDF -0206S-7G1/0206Z-7G1 510-651-G700 FAX510-651-2206 -M18-
Not Available

Abstract: No abstract text available
Text: M w T -0 6 1 8 S -5 G 1 /0 6 1 8 Z -5 G 1 6.0-18.0 GHz BALANCED AM PLIFIER M ODULE MICROWAVE TECHNOLOGY 4 2 6 8 SolarWay Fremont, CA 94538 510-651-6700 FAX510-651 -2208 T Y P IC A L SP EC IFIC ATIO , 16.0 dBm P-1dB 5.5 dB NOISE FIGURE 100 mA@ +8V USES TWO MwT-5SG GaAs FET DEVICES TYPICAL 110 SMALL , Frequency (GHz) 16 18 ELEC TR IC AL SP EC IFIC ATIO N S (Ta=25°C ) SYMBOL FREQ SSG AGteF AGVAT P , Supply Voltage SmallSignatModule Current Thermal Resistance Including FET * UNITS GHz dB ±dB dB/'C dBm


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PDF FAX510-651
TM 1628 IC

Abstract: MGF2148 1D10101 IC TM 1628
Text: MITSUBISHI {DISCRETE SC> M IT S U B IS H I SEM IC O N D U C T O R FET > tí dF| bEHTaa^DDiaioi 4 I , FET > _ 6249829 MITSUBISHI ( D I S C R E T E SC) 9 1D 10102 MGF2148 D FOR MICROWAVE , MITSUBISHI {DISCRETE S O TI D eTI DG1G1Q0 S 1 ~ M IT S U B IS H I SE M IC O N D U C T O R FET > _ 6249829 MITSUBISHI ( D I S C R E T E SC) 91 D 10100 M G F214 8 DT'5?-ö7 FOR MICROWAVE POWER AMPLIFIERS DESCRIPTION The M G F 2 1 4 8 is designed for power


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2011 - Not Available

Abstract: No abstract text available
Text: most IC FET switches. A PIN diode operates as a variable resistor at RF and microwave frequencies. Its , incorporate both FET modes on an IC so that each device type within the circuit can use the process that best , The State of RF/ microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave , today as several devices are typically contained in a block diagram. RF and microwave switches fall , switches have not found wide use in RF and microwave applications since the PIN diode was developed, they


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MGF1802

Abstract: No abstract text available
Text: ^AEI 0010DÖS MITSUBISHI SEMICONDUCTOR FET > MGF1802 6249829 MITSUBISHI ( D I S C R E T E SC)~ 91D 10085 D FOR MICROWAVE POW ER AMPLIFIERS T Y P IC A L C H A R A C T E R IS T IC S (Ta=2 5 'C) ^add v , MITSUBISHI {DISCRETE S O 11 DE |ta4TflS^ DOlQDflM ñ MITSUBISHI SEMICONDUCTOR FET > _ 6249829 MITSUBISHI { D I S C R E T E SC) 91D MGF1802 10084 DT-31-25 FOR MICROWAVE POW ER , w *c C ·c/w E L E C T R IC A L C H A R A C T E R I S T I C S (T a = z5 -c ) Limits


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PDF MGF1802 DT-31-25 MGF1802, MGF1802
Not Available

Abstract: No abstract text available
Text: MwT -0206L-1G2/0206U-1G2 2.0-6. OGHz FEEDBACK AMPUFIER MODULE MICROWAVE TECHNOLOGY HH UTT , Thermal Resistance Including FET * G Hz dB ±dB dB/°C dBm dBm dB/°C dBm dBc dBc dB MIN , 96.0 200.0 * When calculating TcH, use FET Vds = 5.0 volts and FET Ids = 75 mA. 8/92 I M ic a o W a v î T cch n o lo o v MODULE OUTLINES CONFIGURATIONS 2. TOLERANCE XXX = +/- .005 XX = +/- .01 CONSTRUCTION: The 15 mil alumina substrates and 10 mil Cu FET ridge are


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PDF -0206L-1G2/0206U-1G2 4268Solar FAX510-651-2208
GaN amplifier

Abstract: high power fet amplifier schematic S-14 S-10 rf power amplifier with s parameters rf power amplifier transistor with s-parameters rf microwave amplifier with S Parameters Gan on silicon transistor GaN Bias 25 watt power amplifier mmic design high efficiency
Text: Amplifier and Dual-Modulus Prescaler GaAs IC Chip," IEEE Trans. Microwave Theory Tech., vol. 36, pp , RF and microwave frequencies over narrow-bands and broad-bands for both commercial and military , provided. 2. FET Design and Performance 2 The FET used in the MMIC power amplifier has a 625 , grounding and good heat sinking. The 0.4 µm gate length MSAG® FET which features outstanding performance along with remarkable robustness to burnout. A user-defined nonlinear model for this FET was developed


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x-band transistor

Abstract: No abstract text available
Text: Noise Microwave GaAs FET · Low Noise - 2.5 Typical at 10 GHz · All Gold Bonding Pads · Available with , 0 0 0 3 f l cl 2 RLX835 Low Noise M icrow ave GaAs FET _ . . . 7597221 RAYTHEON CO, MICROWAVE C , RAYTHEO N CO-. MICR OW AVE & RàÿthëoHCompany Special Microwave : Devices Operation . 7f i , available, our standard type 04 and 05 packages or our custom type 06 package. E L E C T R IC A L C H A R A C T E R IS T IC S (T A = 2 5 °C ) Parameter Saturated Drain Current Pinch-off Voltage


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PDF RLX835 x-band transistor
MGF2445A

Abstract: Scans-0065801 n-channel 4336
Text: MITSUBISHI SEMICONDUCTOR FET > MGF2445A MICROWAVE POWER GaAs FET DESCRIPTION The MGF2445A , power GaAs FET with an N-channel schottky gate , is designed fo r use in S to Ku band am pli , resistance 15 'C /W MITSUBISHI E LE C T R IC ( 1/ 2) . MITSUBISHI SEMICONDUCTOR FET > MGF2445A MICROWAVE POWER GaAs FET TYPICAL CHARACTERISTICS (Ta= 250 Po & )/ add VS. Pin Pin (dBm , (deg.) -175.6 -177.1 -179.6 176.7 172.2 167.3 162.2 MITSUBISHI E LE C T R IC (2 / 2 )


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PDF MGF2445A 32dBm 12GHz may250 450mA MGF2445A Scans-0065801 n-channel 4336
1 AGMF

Abstract: IC 2 5/1 AGMF
Text: MwT-0206S-2P1/0206Z-2P1 2.0-6.0 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268S , dB INPUT/OUTPUT RETURN LOSS 4.5 dBNOISE FIGURE 200 mA @ +8V USES TWO MwT-2HP GaAs FET DEVICES 5 , Signal Module Current Thermal Resistance Including FET * UNITS GHz dB ±dB dB/°C dBm dBm dB , 0.6 1.8:1 1.8:1 8.1 250.0 * When calculating Tch, use FET Vds = 6.0 volts and FET Ids = 100 mA. 8/92 M ic r o W a v e T b c h w o l o o y MODULE OUTLINES CO O) CM CO CO < o


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PDF MwT-0206S-2P1/0206Z-2P1 4268S 1 AGMF IC 2 5/1 AGMF
Not Available

Abstract: No abstract text available
Text: m MwT-0618S-2P1/0618Z-2P1 MICROWAVE TECHNOLOGY 4268 Sola-Way Fremont, CA 94538 , /OUTPUT RETU RN L O S S • 7.0 dB N O ISE FIG U RE • 200 mA @ +8V • U S E S TW O MwT-2HP GaAs FET D E V IC E S H -l IJ lT 26 TYPICAL 25 OUTPUT POWER 24 P-1dB (dBm) 23 22 TYPICAL 6.0 , Including FET * * UNITS MIN GHz dB ±dB dB/'C dBm dBm dB/'C dBm dBc dBc dB 6.0 4.5 , calculating TcH, use FET Vds = 6.0 volts and FET Ids = 100 mA. 8/92 MODULE OUTLINES 00 o _ O


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PDF MwT-0618S-2P1/0618Z-2P1 FAX510-651-2208
2000 - BB 509 varicap diode

Abstract: TEA6848H adi cmos bipolar SiGe diode varicap BB 112 RF MANUAL ULTRA FAST DIODES SANYO catalog PIN diode ADS model bf1107 spice model tea6849 ON503
Text: products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave , aspect of your design challenge, so you can unleash the performance of your RF and microwave designs , the performance of your next-generation RF and microwave designs. 4 NXP Semiconductors RF , 42 1.8.1 Microwave products for L- and S-band radar and avionics applications , 62 3.4.5 Low-noise LO generators for VSAT and general microwave applications


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2005 - VMMK-2303

Abstract: VMMK-2503 microwave propagation ka band gaas fet Package VMMK-2403 VMMK-2203 E-band mmic VMMK-2103 VMMK-2x03 differences between mems with ic
Text: the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and , are made in the gasket to ensure an air cavity forms over critical microwave elements, such as FET , that the technology is new. Most microwave through millimeter wave IC users are conservative and slow , causing factors and make the IC become the package. This is the basis of WSP (Wafer Scale Packaging). , was applied to GaAs PHEMT IC fabrication. Avago first introduced a family of WSP GaAs products in


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PDF 800MHz AV02-2103EN VMMK-2303 VMMK-2503 microwave propagation ka band gaas fet Package VMMK-2403 VMMK-2203 E-band mmic VMMK-2103 VMMK-2x03 differences between mems with ic
double TRANSISTOR SMD MARKING CODE mc

Abstract: very simple walkie talkie circuit diagram walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Text: ), and the world's best RF power transistors for basestations, broadcast/ISM, and microwave applications , ) _ 30 1.22 Microwave products for Avionics, L- and S-band Radar applications , _ 36 2.4 Ultra-low-noise LO generators for microwave radios , Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal , purpose wideband amplifier Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier


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PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc very simple walkie talkie circuit diagram walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Text: ), and the world's best RF power transistors for basestations, broadcast/ISM, and microwave applications , ) _ 30 1.22 Microwave products for Avionics, L- and S-band Radar applications , _ 36 2.4 Ultra-low-noise LO generators for microwave radios , Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal , purpose wideband amplifier Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier


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PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
2004 - Not Available

Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS , HMC307QS16G is a broadband 5-bit GaAs IC digital attenuator mounted in a 16 lead QSOP surface mountable , N-channel, a 0 volt potential on the gate is required to turn the FET “on” and –5V to turn the FET “off”. It is the potential difference between the gate and drain-source channel, which turn the FET , Hittite Microwave Corporation: 20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373


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PDF HMC307QS16G V2002
Not Available

Abstract: No abstract text available
Text: ¡Œ ç»„åˆï¼Œåˆ¶é€ å‡ºç¬¦åˆè¦æ±‚çš„å¼€å…³ã€‚å›¾ 1 是由串联和并联 FET • Solid State RF/ Microwave Switch Technology: Part 2 Skyworks , 控制 IC 的正向电压操作 è´­ä¹°æˆ–æŒ‡å®šå°„é¢‘å¼€å…³è§„æ ¼çš„ä¸»è¦è€ƒè™‘å› ç´ RF/ Microwave , Reflective(反射式) A = Absorptive(吸收式)(端接) GaAs 射频开关原理 联 FET 的偏置产生非常低的电阻。请参阅 Skyworks 网 开关场效应晶体管 ( FET ) 充当三端口器件时,源极和漏极 ç , _ 形成射频信号的通道,门极控制通道的打开和关断。要 Published_Articles.aspx),以获得更多有关 FET 开关拓扑 å


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PDF BRO378-12A
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