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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

marking codes transistors SSs Datasheets Context Search

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6p 101 potentiometer

Abstract: No abstract text available
Text: % Humidity: Marking U n its Marked W ith Resistance C o d e and 2 Digit Date C ode (80 - 98% RH, 240 , i'R i. 2.00% a SSs . 2.00% H/gfa Temp. Exposure: (125°C, 250 Hrs) a F i'R i. 3.00% a SSs . 2.00 , MEASURED AT TOP OF COMPONENT 1. UNITS TO BE PACKAGED 1000 PER REEL 2. MAXIMUM OF 3 DATE CODES PER REEL, 3 BLANK SPACES BETWEEN DATE CODES . 3. REEL SIZE : 3 6 0 mm DIA. / 4 4 mm INSIDE FLANGE. 3 0 mm HOLE


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A434 RF MODULE

Abstract: JESD31 TRANSISTOR SMD MARKING CODE A45 NCSL Z540.3 MIL-I-46058 part marking b36 smd diode tm-1017 B568 solar water pumping machine control schematic JEDEC JESD31
Text: To improve marking of microcircuits certification marks and clarification. Manufacturer Item , 3.6.3.2 ( for JAN or J mark) To improve marking of microcircuits and avoid confusions with MIL-M , . 11 3.6 Marking of microcircuits , . 14 3.6.7 Marking location and sequence , . 15 3.6.9 Marking on container


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PDF MIL-PRF-38535 MIL-PRF-38535J RD-650) A434 RF MODULE JESD31 TRANSISTOR SMD MARKING CODE A45 NCSL Z540.3 MIL-I-46058 part marking b36 smd diode tm-1017 B568 solar water pumping machine control schematic JEDEC JESD31
tm-1017

Abstract: JESD31 marking code ny SMD Transistor npn ASTM E104 A434 RF MODULE JEDEC JESD31 MIL-I-46058 Automated Guided Vehicles project semiconductors cross index M38510 cross index
Text: .10 3.6 Marking of microcircuits , .14 3.6.7 Marking location and sequence , .15 3.6.9 Marking on container , .22 5.2 Marking , .57 A.3.6 Marking of microcircuits


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PDF MIL-PRF-38535H MIL-PRF-38535G MIL-PRF-3853591 RD-650) tm-1017 JESD31 marking code ny SMD Transistor npn ASTM E104 A434 RF MODULE JEDEC JESD31 MIL-I-46058 Automated Guided Vehicles project semiconductors cross index M38510 cross index
2013 - M24LR64ER

Abstract: 24l64 464-E
Text: codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 26.1 , codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 Ordering and marking information . . .


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PDF M24LR64E-R 64-Kbit 64-bit 32-bit DocID022712 M24LR64ER 24l64 464-E
2013 - Not Available

Abstract: No abstract text available
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 Command codes . . . , . . . . . . . . . . . . . . . . . . . . . . . 78 Command codes . . . . . . . . . . . . . . . . . . . , and marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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PDF M24LR64E-R 64-Kbit 64-bit 32-bit DocID022712
2001 - 45N20B

Abstract: No abstract text available
Text: Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild , -220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS , Samples General description These N-Channel enhancement mode power field effect transistors are , method TO-220F 3 RAIL Package Marking Convention* Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &4 (4-Digit Date Code) Line 2: SSS Line 3: 45N20B Indicates product with Pb-free second-level


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PDF SSP45N20B/SSS45N20B O-220F 45N20B SSS45N20B FP001 45N20B
C12468

Abstract: bs G210 smd code YL 69 smd marking code SSs bs G210 g type 9525-F0033 C12929 C13064 STANDARD BS G210 nicomatic
Text: Termination type Number of contacts Reverse marking Fixing P.c.B. NICOMATIC SERIES Three rows , S C FIXING Jack screw refer to page 19 MARKING Standard Reverse leave blank M , reverse marking (please add "M" at the end of the part number) FEMALE CONNECTORS (shown looking onto , are also available with reverse marking (please add "M" at the end of the part number) 12 , 35 37 41 43 47 49 53 55 59 61 65 67 71 73 77 sss sss sss sss sss sss sss sss


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PDF 30-C12468 30-C13064 C12935) C12468 bs G210 smd code YL 69 smd marking code SSs bs G210 g type 9525-F0033 C12929 C13064 STANDARD BS G210 nicomatic
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP0G1AE Silicon PNP epitaxial planar type For digital circuits 0.12+0.03 -0.02 Unit: mm Features · SSS Mini type 6-pin package, reduction of the mounting area and assembly cost by one half · Maximum package , : Collector (Tr2) 5 : Emitter (Tr1) 6 : Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 6H Internal , measuring methods for transistors . Publication date: October 2004 SJJ00306AED (0.10) 1 This


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PDF 2002/95/EC) UNR31AE
2004 - UNR31AE

Abstract: No abstract text available
Text: Composite Transistors NP0G1AE Silicon PNP epitaxial planar type For digital circuits Unit: mm 0.12+0.03 -0.02 4 2 1 0 to 0.02 0.10 1.00±0.04 · SSS Mini type 6-pin package, reduction of the mounting area and assembly cost by one half · Maximum package height (0.4 mm) contributes , ) Marking Symbol: 6H Internal Connection 6 5 4 (C1) (E1) (C2) Note) *: Measuring on substrate at 17 , measuring methods for transistors . Publication date: October 2004 SJJ00306AED 1 NP0G1AE IC VCE


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PDF UNR31AE UNR31AE
2004 - HT 1000-4

Abstract: IC marking TY 6pin 2SD0601A NP04501
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP04501 Silicon NPN epitaxial planar type For general amplification Unit: mm Features +0.03 0.12 , ue e/ d Two elements incorporated into one package (Each transistor is separated) SSS Mini , (Tr1) SSSMini6-F1 Package Marking Symbol: 5H Internal Connection 6 5 4 Tr2 Tr1 , measuring methods for transistors . 2. *: Pulse measurement Publication date: December 2004


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PDF 2002/95/EC) NP04501 HT 1000-4 IC marking TY 6pin 2SD0601A NP04501
2004 - UNR31AE

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP0G1AE Silicon PNP epitaxial planar type For digital circuits Unit: mm M Di ain sc te on na tin nc ue , rm ag at e. io n. · SSS Mini type 6-pin package, reduction of the mounting area and assembly , (Tr1) 6 : Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 6H Internal Connection 6 5 4 , are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors . Publication


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PDF 2002/95/EC) UNR31AE
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP04501 Silicon NPN epitaxial planar type For general amplification Features Two elements incorporated into one package (Each transistor is separated) SSS Mini type 6-pin package, reduction of the mounting , ) 0.37 -0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol , measuring methods for transistors . 2. *: Pulse measurement (0.10) +0.03 Publication date: December


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PDF 2002/95/EC) NP04501 2SD0601A
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP04501 Silicon NPN epitaxial planar type For general amplification Features Two elements incorporated into one package (Each transistor is separated) SSS Mini type 6-pin package, reduction of the mounting , ) 0.37 -0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol , measuring methods for transistors . 2. *: Pulse measurement (0.10) +0.03 Publication date: December


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PDF 2002/95/EC) NP04501 2SD0601A
2004 - 2SD0601A

Abstract: NP04501
Text: Composite Transistors NP04501 Silicon NPN epitaxial planar type For general amplification Unit: mm Features +0.03 0.12 -0.02 4 1 2 0.10 3 (0.35) (0.35) 1.00±0.05 , one package (Each transistor is separated) SSS Mini type 6-pin package, reduction of the mounting , ) 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 5H , transistors . 2. *: Pulse measurement Publication date: December 2004 SJJ00309AED 1 NP04501 PT


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PDF NP04501 2SD0601A 2SD0601A NP04501
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP0G1AE Silicon PNP epitaxial planar type For digital circuits 0.12+0.03 -0.02 Unit: mm Features · SSS Mini type 6-pin package, reduction of the mounting area and assembly cost by one half · Maximum package , : Collector (Tr2) 5 : Emitter (Tr1) 6 : Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 6H Internal , measuring methods for transistors . Publication date: October 2004 SJJ00306AED (0.10) 1 This


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PDF 2002/95/EC) UNR31AE
2000 - 2sc5609 transistor

Abstract: 2SC5609 transistor 2sc5609 2SA20 2SA2021
Text: : Collector SSS Mini Type Package (3-pin) Marking Symbol: 3F °C Storage temperature 0 to 0.01 , Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 ­0.02 0.33+0.05 ­0.02 1 0.23+0.05 ­0.02 0.15 min. 2 0.15 min. · High foward current transfer ratio hFE · SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 5° I Features


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PDF 2SC5609 2SA2021 2sc5609 transistor 2SC5609 transistor 2sc5609 2SA20 2SA2021
2000 - 2sc5609

Abstract: 2sc5609 transistor 2SA2021
Text: : Emitter 3: Collector SSS Mini Type Package (3-pin) Marking Symbol: 3E °C Storage temperature , Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 ­0.02 0.33+0.05 ­0.02 0.15 min. 5° I Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 ­0.02 2 0.15 min. · High foward current transfer ratio hFE · SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through


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PDF 2SA2021 2SC5609 2sc5609 2sc5609 transistor 2SA2021
2004 - NP063D3

Abstract: UNR31A0 UNR32A5
Text: Composite Transistors NP063D3 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial , 1.00±0.04 · SSS Mini type 6-pin package, reduction of the mounting area and assembly cost by one half · , temperature 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol , JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors . Publication date: October , JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors . Common characteristics chart


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PDF NP063D3 NP063D3 UNR31A0 UNR32A5
2004 - NP063D3

Abstract: UNR31A0 UNR32A5
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP063D3 , Package Marking Symbol: 3Y mW 125 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) mA , at e. io n. · SSS Mini type 6-pin package, reduction of the mounting area and assembly cost by , JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors . Publication date: October , transistors . Common characteristics chart PT Ta Total power dissipation PT (mW) 140 120 100 80


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PDF 2002/95/EC) NP063D3 NP063D3 UNR31A0 UNR32A5
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP063D3 , Features · SSS Mini type 6-pin package, reduction of the mounting area and assembly cost by one half · , : Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 3Y Internal Connection 6 (C1) 5 (B1) R1 10 k 4 , based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors . (0.10 , ) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors


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PDF 2002/95/EC) NP063D3 UNR31A0 UNR32A5
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP063D3 , Features · SSS Mini type 6-pin package, reduction of the mounting area and assembly cost by one half · , : Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 3Y Internal Connection 6 (C1) 5 (B1) R1 10 k 4 , based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors . (0.10 , ) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors


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PDF 2002/95/EC) NP063D3 UNR31A0 UNR32A5
1998 - Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B y1 marking code transistor transistor marking pl similar 2N2219 transistor
Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF , insufficient for full type designation, the following marking codes may be used for identification (see Table 9). Table 8 Marking codes for RF power transistors CODE VGS CODE VGS 0 1.00 , 1998 Jul 31 Table 9 Marking codes for microwave transistors TYPE NUMBER MARKING CODE


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PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B y1 marking code transistor transistor marking pl similar 2N2219 transistor
1998 - TB200HB02

Abstract: No abstract text available
Text: Orientation s X sss 105 101 205 201 295 291 305 301 TB100 ­ marking one side TB100 ­ marking both sides , Top & Bottom Marking Strips Double Row Terminal Blocks Top Marker Strips Top mounting marker , Marker Strip Poles s X sss 133 103 233 203 333 303 TB100 (.060 thk x .500w) TB100 (.032 thk x , available to handle most marking situations. All marker strips must be ordered separately. To order, specify , for marking one side . . . Part # is X10513. Position for legends (one side, two sides) can be


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PDF TB200, X20312. TB200HB, X23312HB. TB100 TB200 TB200HB* TB200HB02
1721E50R

Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Text: Philips Semiconductors Microwave Transistors MARKING CODES Marking codes The microwave transistors in this book are normally marked with manufacturer's name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking codes may be used for identification. TYPE NUMBER LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S , PTC4001T R8 R9 407 409 408 MARKING CODE 1015T 435 436 439 502 196 198 1721E50R 2024E45R 2327E40R 411


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PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips
5H MARKING

Abstract: 2SD0601A NP04501
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP04501 Silicon NPN epitaxial planar type For general amplification Unit: mm Features +0.03 0.12 , elements incorporated into one package (Each transistor is separated) SSS Mini type 6-pin package , Package Marking Symbol: 5H Internal Connection 6 5 4 Tr2 Tr1 Note) * : Measuring on , STANDARD JIS C 7030 measuring methods for transistors . 2. *: Pulse measurement Publication date


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PDF 2002/95/EC) NP04501 5H MARKING 2SD0601A NP04501
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