The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP
ISL6146AFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146DFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146AFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C

marking K gaas fet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw


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2001 - date code marking NEC

Abstract: code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a gaas fet marking C LOT CODE NEC Nec AC 160
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , CP( K ) Printed in Japan The mark · shows major revised points. © 1998, 2001 PS7200H-1A PACKAGE DIMENSIONS (UNIT: mm) 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET


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PDF PS7200H-1A PS7200H-1A date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a gaas fet marking C LOT CODE NEC Nec AC 160
XMFP1-M3

Abstract: D 8243 HC E176 e170315 OF FET E176 E176 field effect transistor FET E119 mc34063 step down external transistor E176 fet 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co , Characteristics / Handling of Test Board 19 GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS , Marking A : Part No. B : Lot No. 2.9 A Bk (2) 1.9 B 0.8 0.8 0.3 (1) (3 , (3): Source (4): Drain Marking A : Part No. B : Lot No. (in mm) 1 cABSOLUTE MAXIMUM , Fmin S12 XMFS3-M1 S22 freq. MAG ANG MAG ANG MAG ANG MAG ANG (MHz) S11 K S21 S12


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PDF Rating3-5698410 XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 E176 field effect transistor FET E119 mc34063 step down external transistor E176 fet 28428
2003 - marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
Text: .45 7.2 Power GaAs FET , GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES FET .48 8.6 GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET


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PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
2001 - UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: .61 K Band Power GaAs FET Chip , .56 Power GaAs FET , GaAs MMIC, GaAs MCM , ) .59 GaAs MES FET , .60 GaAs MES FET Chip .60 GaAs MES FET


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PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
2011 - Not Available

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , =12GHz, Pin=-5dBm Note: P1B and Glp are tested with sampling inspection. 1 < Power GaAs FET , ¼š Gate 解 Source 回 Drain < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , VOLTAGE VGS(V) 0.0 < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS (VDS , interested, please contact our sales offices. < Power GaAs FET > MGF1952A Leadless ceramic package


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PDF MGF1952A MGF1952A 17dBm 12GHz 000pcs/reel
2002 - GaAs FET cfy 14

Abstract: GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k f5035 F1393 Q62702-F1394 Q62702-F1393 cfy 19
Text: CFY 35 GaAs FET , . TriQuint Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 1/5 CFY 35 GaAs FET , 35 GaAs FET , Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 3/5 CFY 35 GaAs FET , 80.3 TriQuint Semiconductor Europe st Rev 1.0/October 1 , 2002 pg. 4/5 GaAs FET CFY 35


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PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k f5035 F1393 Q62702-F1394 Q62702-F1393 cfy 19
2005 - VNA-25 equivalent

Abstract: 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
Text: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves


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PDF VNA-25+ VNA-25 2002/95/EC) IPC/JEDECJ-STD-020C C/85RH VNA-25 equivalent 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
2011 - gaas fet marking J

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , with sampling inspection. Gs/NFmin are not tested. 1 < Power GaAs FET > MGF1941AL Micro-X , 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.②±0.1 (GD-32) < Power GaAs FET > MGF1941AL , CURRENT ID(mA) Ta=25deg.C VDS=3V 90 < Power GaAs FET > MGF1941AL Micro-X type plastic , =0.508mm) < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1


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PDF MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel gaas fet marking J
2011 - rogers* RO4003C

Abstract: mgf1941 gaas fet micro-X Package marking MGF1941AL 137 marking Micro-X gaas fet micro-X Package gaas fet micro-X gaas fet marking J r338 GD-32
Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL , < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I , 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 < Power GaAs FET , /Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL


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PDF MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel rogers* RO4003C mgf1941 gaas fet micro-X Package marking 137 marking Micro-X gaas fet micro-X Package gaas fet micro-X gaas fet marking J r338 GD-32
2005 - Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801E-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET APPLICATIONS · Measurement , CP( K ) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2005 PS7801E-1A PACKAGE


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PDF PS7801E-1A PS7801E-1A PS72xx
nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
Text: ) GaAs Device products HJ-FETs (Hetero Junction FET ) Discretes FETs MES FETs Power FETs , covers "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and "Microwave GaAs Devices". Caution GaAs Products This product uses gallium arsenide ( GaAs ). GaAs vapor and powder are , . 36 3.2.4 Low Noise GaAs FETs, HBTs, HJ-FETs , ). 55 6. MARKING /PART NUMBER


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PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
2011 - Not Available

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1953A Leadless ceramic package DESCRIPTION The MGF1953A power MES FET , GaAs FET > MGF1953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , Publication Date : Apr., 2011 2 < Power GaAs FET > MGF1953A Leadless ceramic package TYPICAL , ) Publication Date : Apr., 2011 3 < Power GaAs FET > MGF1953A Leadless ceramic package S PARAMETERS , GaAs FET > MGF1953A Leadless ceramic package Keep safety first in your circuit designs! ·


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PDF MGF1953A MGF1953A 20dBm 12GHz 100mA 000pcs/reel
2011 - FET GAAS marking a

Abstract: gaas fet marking mitsubishi top side marking
Text: < Power GaAs FET > MGF1954A Leadless ceramic package DESCRIPTION The MGF1954A power MES FET , GaAs FET > MGF1954A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , Publication Date : Apr., 2011 2 < Power GaAs FET > MGF1954A Leadless ceramic package TYPICAL , ) Publication Date : Apr., 2011 3 < Power GaAs FET > MGF1954A Leadless ceramic package S PARAMETERS , GaAs FET > MGF1954A Leadless ceramic package Keep safety first in your circuit designs! ·


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PDF MGF1954A MGF1954A 23dBm 12GHz 100mA 000pcs/reel FET GAAS marking a gaas fet marking mitsubishi top side marking
2004 - Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801C-1A 4-PIN ULTRA SMALL FLAT-LEAD, SUPER LOW OUTPUT CAPACITANCE, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801C-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and , edition) Date Published December 2004 CP( K ) Printed in Japan NEC Compound Semiconductor Devices, Ltd , 4.2±0.2 N 0.2±0.1 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET 3.6 +0.3 ­0.4 1 1 2 3.0


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PDF PS7801C-1A PS7801C-1A PS72xx
2011 - gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Text: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES , Publication Date : Apr., 2011 1 < Power GaAs FET > MGF1451A Micro-X ceramic package TYPICAL , < Power GaAs FET > MGF1451A Micro-X ceramic package S PARAMETERS (Conditions:VDS=3V,IDS=30mA,Ta , 17.7 17.2 16.9 14.9 14.0 13.5 12.7 11.7 11.4 11.0 10.8 10.7 10.5 10.4 10.2 9.4 GaAs FET Bottom view , interested, please contact our sales offices. Publication Date : Apr., 2011 3 < Power GaAs FET


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PDF MGF1451A MGF1451A 13dBm 12GHz gaas fet micro-X Package marking gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
1999 - PS7200M-1A

Abstract: PS7200M-1A-E4 PS7200M-1A-F3
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200M-1A 4-PIN SOP, 0.5 pF LOW OUTPUT CAPACITANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200M-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , 2002 CP( K ) Printed in Japan © NEC Corporation 1999 © NEC Compound Semiconductor Devices 2002 , . MOS FET 4. MOS FET 1 2 0.05+0.08 ­0.05 2.05+0.08 ­0.05 0.15+0.10 ­0.05 7.0±0.3


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PDF PS7200M-1A PS7200M-1A PS7200M-1A-E4 PS7200M-1A-F3
2011 - mitsubishi top side marking

Abstract: MGF1951A
Text: < Power GaAs FET > MGF1951A Leadless ceramic package DESCRIPTION The MGF1951A power MES FET , GaAs FET > MGF1951A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , Publication Date : Apr., 2011 2 < Power GaAs FET > MGF1951A Leadless ceramic package TYPICAL , 15 Pin (dBm ) Publication Date : Apr., 2011 3 < Power GaAs FET > MGF1951A Leadless , : Apr., 2011 4 < Power GaAs FET > MGF1951A Leadless ceramic package Keep safety first in your


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PDF MGF1951A MGF1951A 13dBm 12GHz 000pcs/reel mitsubishi top side marking
2010 - FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic PC8230TU PG2163T5N sot-23 g6g 2SC3357/NE85634 marking code C1H mmic
Text: Circuits 5 (2) GaAs Device products HJ-FETs (Hetero Junction FET ) Discretes FETs MES , "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and "Microwave GaAs Devices". Caution GaAs Products This product uses gallium arsenide ( GaAs ). GaAs vapor and powder are hazardous to , . 34 3.2.4 Low Noise GaAs FETs, HBTs, HJ-FETs , ). 53 6. MARKING /PART NUMBER


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PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic PC8230TU PG2163T5N sot-23 g6g 2SC3357/NE85634 marking code C1H mmic
1998 - LOT CODE NE NEC

Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC code marking NEC nec lot number on packing label hjfet mini mold transistor 25 C2H marking NEC PART NUMBER MARKING marking K gaas fet
Text: Silicon bipolar twin transistor NE×××18 GaAs FET , HJ-FET NE×××M01 GaAs FET , HJ-FET ICs µPC××××TB Silicon bipolar analog IC µPG×××TB GaAs IC 5 2. 2.1 SPECIFICATIONS TAPE DIMENSIONS t H A E J K0 K1 K C W B D D1 G F Length Unit: mm , Document No. P10687EJ4V0IF00 (4th edition) Date Published March 1998 N CP( K ) © 1997 Printed in Japan , . 2.2 REEL DIMENSIONS AND MARKING


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PDF P10687EJ4V0IF00 us588-6130 LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC code marking NEC nec lot number on packing label hjfet mini mold transistor 25 C2H marking NEC PART NUMBER MARKING marking K gaas fet
2011 - ID600A

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , : mm Gate Source Drain Publication Date : Oct., 2011 2 < Power GaAs FET > MGF1952A , < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 , < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS f (GHz) 1 2 3 4 5 6 7 8 9 10 11


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PDF MGF1952A MGF1952A 17dBm 12GHz 000pcs/reel ID600A
1998 - NEC Relay Date Codes

Abstract: FET marking codes NEC MARKING codes nec gaas fet marking
Text: DATA SHEET Solid State Relay OCMOS FET PS7241-2B 8-PIN SOP, 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 2-ch Optical Coupled MOS FET DESCRIPTION The PS7241-2B is a solid state relay containing GaAs LEDs on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the , . P13265EJ4V0DS00) Date Published February 2003 CP( K ) Printed in Japan The mark · shows major revised points , FET 6. MOS FET 7. MOS FET 8. MOS FET 1 2 3 7.0±0.3 4.4 4 2.05+0.08 ­0.05 0.15+0.10


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PDF PS7241-2B PS7241-2B PS7241-2B-F3, E72422 NEC Relay Date Codes FET marking codes NEC MARKING codes nec gaas fet marking
2011 - Not Available

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , Publication Date : Apr., 2011 2 < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , (dBm ) Publication Date : Apr., 2011 3 < Power GaAs FET > MGF1952A Leadless ceramic package , . Publication Date : Apr., 2011 4 < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS


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PDF MGF1952A MGF1952A 17dBm 12GHz 000pcs/reel
2002 - Q62702-L96

Abstract: No abstract text available
Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 , 1st, 2002 pg. 1/7 CLY 2 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise , TriQuint Semiconductor Europe October 1st, 2002 dB pg. 2/7 matching CLY 2 GaAs FET , , 2002 pg. 3/7 5 [V] 6 7 CLY 2 GaAs FET typ. Common Source S-Parameters and noise data , -143.0 -147.2 -150.0 -159.7 -167.5 -173.1 179.2 174.3 167.8 160.9 CLY 2 GaAs FET typ


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PDF Q62702-L96 Q62702-L96
NEC Ga FET marking L

Abstract: marking K gaas fet nec gaas fet marking NEC Ga FET marking V NEC Ga FET marking Rf NEC Ga FET marking A NEC Ga FET "marking V" NEC Ga FET nec 9000 NE76184B
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion , fields, because this device is MES FET with GaAs shottky barrier gate. 5 NE76184B Caution The , NE76184B-T1A MARKING 1.78 ±0.2 ORDERING INFORMATION Tape & reel 5000 pcs./reel 1.0 ±0.2 0.5 , CONDITIONS VDD = 3 V f = 4 GHz ID = 10 mA f = 12 GHz IDSS rank is specified as follows. ( K : 30


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PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A NEC Ga FET marking L marking K gaas fet nec gaas fet marking NEC Ga FET marking V NEC Ga FET marking Rf NEC Ga FET marking A NEC Ga FET "marking V" NEC Ga FET nec 9000
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