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2008 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD1898 Features · · · High VCEO, VCEO=80V High IC, IC=1.0A(DC) Good hFE linearity x x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Marking : DF NPN Silicon Power Transistors Maximum Ratings A PC W O TJ Junction Temperature C O TSTG Storage Temperature C Electrical Characteristics @ 25° C Unless Otherwise Specified Symbol


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PDF 2SD1898 50uAdc)
2008 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD1898 Features · · · High VCEO, VCEO=80V High IC, IC=1.0A(DC) Good hFE linearity x x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Marking : DF NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC A PC W O TJ Junction Temperature C O TSTG Storage Temperature C Electrical


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PDF 2SD1898 50uAdc)
Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD1898 Features · · · · · High VCEO, VCEO=80V High IC, IC=1.0A(DC) Good hFE linearity Case Material: Molded Plastic. Classification Rating 94V-0 Marking : DF UL Flammability NPN Silicon Power Transistors Maximum Ratings A PC W O TJ Junction Temperature C O TSTG C Storage Temperature Electrical Characteristics @ 25° C Unless Otherwise Specified Symbol Parameter Min Typ Max Units


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PDF 2SD1898 50uAdc)
2008 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD1898 Features · · · High VCEO, VCEO=80V High IC, IC=1.0A(DC) Good hFE linearity x x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Marking : DF NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC A PC W O TJ Junction Temperature C O TSTG Storage Temperature C Electrical


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PDF 2SD1898 50uAdc)
2004 - marking DF

Abstract: ECSP1608-4 N3004 SS1003EJ
Text: Mounted on a ceramic board (600mm2!0.8mm) 165 ns °C / W Marking : DF Any and all SANYO , Bottom View Marking 0.05 2 0.3 1.6 1.2 2 0.2 1 1 0.6 1 : Anode 2 , Circuit Cathode mark (Top) Anode Cathode 50 100 10 10mA DF 10µs *Electrodes


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PDF SS1003EJ ENN8157 500mA, marking DF ECSP1608-4 N3004 SS1003EJ
2007 - ECSP1608-4

Abstract: SB1003EJ 7033a
Text: 165 ns °C / W Marking : DF Any and all SANYO Semiconductor products described or contained , (Top view) trr Test Circuit Cathode mark (Top) Anode 10mA DF Duty10% Cathode 50


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PDF SB1003EJ EN8156B ECSP1608-4 SB1003EJ 7033a
2005 - Not Available

Abstract: No abstract text available
Text: ceramic board (600mm2!0.8mm) V 15 µA 27 pF 10 165 ns °C / W Marking : DF , Connection (Top view) trr Test Circuit Cathode mark (Top) Anode 10mA DF Duty≤10% Cathode


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PDF SB1003EJ ENN8156A
2004 - CPH3235

Abstract: marking DF
Text: =4V, IC=0 VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz Unit µA 400 450 Marking : DF


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PDF CPH3235 ENN7783 CPH3235 marking DF
1996 - marking DF

Abstract: BF721T1
Text: MARKING DF THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1


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PDF BF721T1/D BF721T1 BF721T1/D* marking DF BF721T1
2001 - Not Available

Abstract: No abstract text available
Text: CASE 318E-04, STYLE 1 SOT-223 (TO-261AA) DEVICE MARKING DF THERMAL CHARACTERISTICS


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PDF BF721T1 318E-04, OT-223 O-261AA)
2001 - BF721T1

Abstract: SMD310 marking DF
Text: 318E-04, STYLE 1 SOT­223 (TO-261AA) DEVICE MARKING DF THERMAL CHARACTERISTICS Characteristic


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PDF BF721T1 318E-04, O-261AA) r14525 BF721T1/D BF721T1 SMD310 marking DF
2001 - BF721T1

Abstract: SMD310
Text: 318E-04, STYLE 1 SOT­223 (TO-261AA) DEVICE MARKING DF THERMAL CHARACTERISTICS Characteristic


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PDF BF721T1 318E-04, O-261AA) r14525 BF721T1/D BF721T1 SMD310
1998 - BF721T1

Abstract: SMD310
Text: MARKING DF THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1


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PDF BF721T1/D BF721T1 BF721T1 SMD310
Not Available

Abstract: No abstract text available
Text: MARKING DF THERMAL CHARACTERISTICS Characteristic Therm al Resistance from Junction to Am bientO


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PDF BF721T1/D BF721T1
2001 - Not Available

Abstract: No abstract text available
Text: Vdc mAdc Watts °C °C 1 2 3 4 CASE 318E-04, STYLE 1 SOT­223 (TO-261AA) DEVICE MARKING DF , ­416 packages have a device marking and a date code etched on the device. The generic example below depicts both the device marking and a representation of the date code that appears on the SC-70/SOT-323, SC-59 and , . 82mm ± 1mm ARBOR HOLE DIA. 30.5mm ± 0.25mm MARKING NOTE HUB RECESS 76.2mm ± 1mm RECESS DEPTH


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PDF BF721T1 318E-04, O-261AA)
2013 - DF005S

Abstract: No abstract text available
Text: -020C Terminals: Finish - Tin. Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Case Marking : Type , , go to our website at http://www.diodes.com/products/packages.html Marking Information DFxxxS = Product Type Marking Code,ex:DF10S YWW = Date Code Marking Y = Last digit of year (ex: 2 for 2012) WW , Non-Repetitive Peak Forward Surge Current, 8.3 ms Single Half Sine-Wave Superimposed on Rated Load DF 005S DF 01S DF 02S DF 04S DF 06S DF 08S DF 10S Unit 50 100 200 400


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PDF DF005S DF10S E94661 J-STD-020C DS17001 DF005S
2013 - DF005S

Abstract: No abstract text available
Text: -020C Terminals: Finish - Tin. Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Case Marking : Type , , go to our website at http://www.diodes.com/products/packages.html Marking Information DFxxxS = Product Type Marking Code,ex:DF10S YYWW = Date Code Marking YY = Last digit of yeat (ex: 12 for 2012 , Non-Repetitive Peak Forward Surge Current, 8.3 ms Single Half Sine-Wave Superimposed on Rated Load DF 005S DF 01S DF 02S DF 04S DF 06S DF 08S DF 10S Unit 50 100 200 400


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PDF DF005S DF10S E94661 J-STD-020C DS17001 DF005S
2000 - JIS-K-8101

Abstract: AC1500V CF10 CU10 AC575V
Text: .4. No marking defects. Capacitance Change Within T10% D.F . 0.025 max. I.R. More than , . 6 Capacitance Within the specified tolerance. 7 Dissipation Factor ( D.F .) 0.025 max. 8 Capacitance Temperature Characteristics Cap. Change Within T10% The capacitance/ D.F , . D.F . 11 No defects or abnormalities. 0.025 max. Vibration Resistance Solder the , cracking or marking defects shall occur. b TR S QT S Q , R , T S 4.5 Solder the


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PDF 000pF AC575V AC1500V 500T50V 40T2D 106kPa JIS-K-8101 AC1500V CF10 CU10 AC575V
1998 - marking ghm

Abstract: No abstract text available
Text: Capacitance Heat Change D.F . I.R. Dielectric Strength Specification No marking defects. Within T15% 0.05 , Change D.F . I.R. Dielectric Strength No marking defects. Within T7.5% 0.025 max. More than 2000M Pass , Dissipation Factor ( D.F .) Capacitance Temperature Characteristics More than 2000M Within the specified , resistance shall be measured with 500T50V and within 60T5 s of charging. The capacitance/ D.F . shall be , Appearance Capacitance D.F . No defects or abnormalities. Within the specified tolerance. 0.025 max. Glass


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PDF GHM21xx GHM22xx 2000M AC575V AC1500V GHM22xx) AC1000V 1000M 106kPa 40T2D marking ghm
2006 - DFS Case

Abstract: No abstract text available
Text: 208 e3 Polarity: As marked on Case Marking : Type Number, See Page 3 Weight: 0.38 grams (approximate , IRM I2 t CT RqJA Tj, TSTG DF 005S 50 35 DF 01S 100 70 DF 02S 200 140 DF 04S 400 280 1.0 50 1.1 10 500 10.4 25 40 -65 to +150 DF 06S 600 420 DF 08S 800 560 DF 10S 1000 700 Unit V V A , ://www.diodes.com/datasheets/ap02007.pdf. Marking Information DFxxxS XXXX = Manufacturers' code marking DFxxxS = Product type marking code, ex: DF10S YWW = Date code marking Y = Last digit of year ex: 2 for


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PDF DF005S DF01S DF02S DF04S DF06S DF08S DF10S E94661 DFS Case
2006 - DF005M

Abstract: DF01M DF02M DF04M DF06M DF08M DF10M E94661 DF005S
Text: mm Marking : Type Number, See Page 3 Weight: 0.38 grams (approximate) Maximum Ratings and , Rectified Output Current @ TA = 40°C DF 01M DF 02M DF 04M DF 06M DF 08M DF 10M , Working Peak Reverse Voltage DC Blocking Voltage DF 005M VRMM VRWM VR Characteristic 35 , at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXXX YWW = Manufacturers' code marking XXXXX = Product type marking code, ex: DF10M YWW = Date code marking Y = Last


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PDF DF005M DF01M DF02M DF04M DF06M DF08M DF10M E94661 DF10M E94661 DF005S
2007 - Not Available

Abstract: No abstract text available
Text: on Case Marking Information: Type Number, See Page 3 Weight: 0.38 grams (approximate) D J , load, derate current by 20%. Symbol DF 005M DF 01M DF 02M DF 04M DF 06M DF 08M DF 10M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage , at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXXX YWW = Manufacturers’ code marking XXXXX = Product type marking code, ex: DF10M YWW = Date code marking Y = Last


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PDF DF005M DF10M E94661 DS21201 DF005M-DF10M
2000 - W125D

Abstract: No abstract text available
Text: Capacitance Change Within T10% D.F . Resistance 13 to Soldering Heat No marking defects. 0.025 , item No.4. Appearance No marking defects. Capacitance Change Within T15% D.F . 0.05 , the specified tolerance. 7 Dissipation Factor ( D.F .) 0.025 max. 8 Capacitance , Strength of Termination Test Method Y The capacitance/ D.F . shall be measured at 20D at a frequency , Epoxy Board Fig.1 Appearance Capacitance Within the specified tolerance. D.F . 10 No


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PDF W125D 500T50V 250T50V DC250V) 40T2D 106kPa W125D
2006 - DF005M

Abstract: dfm circuit E94661 DF10M DF08M DF06M DF04M DF02M DF01M DF005S
Text: . Solder Plated Leads, Solderable per MIL-STD-202, Method 208 e3 All Dimensions in mm Marking : Type , TA = 40°C DF 01M DF 02M DF 04M DF 06M DF 08M DF 10M Unit 50 100 , Voltage DC Blocking Voltage DF 005M VRMM VRWM VR Characteristic 35 70 140 280 , . Marking Information XXXXX YWW = Manufacturers' code marking XXXXX = Product type marking code, ex: DF10M YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52


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PDF DF005M DF01M DF02M DF04M DF06M DF08M DF10M E94661 dfm circuit E94661 DF10M DF005S
1998 - Not Available

Abstract: No abstract text available
Text: Capacitance Heat Change D.F . I.R. Dielectric Strength Specification No marking defects Within T10% 0.025 , Temperature Cycle Appearance Capacitance Change D.F . I.R. Dielectric Strength No marking defects Within , D.F . I.R. Dielectric Strength No marking defects Within T15% 0.05 max. CU0.01µF : More than 10M · , ) and within 60T5 s of charging. The capacitance/ D.F . shall be measured at 20D at a frequency of , Speed : 1.0mm/s 5 Insulation Resistance (I.R.) Capacitance Dissipation Factor ( D.F .) Capacitance


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PDF W125D 500T50V 250T50V DC250V) 40T2D 106kPa
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