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Part Manufacturer Description Datasheet Download Buy Part
282807-5 TE Connectivity (282807-5) 3P TERMI-BLOK PLUG,MARKED
7-1571986-2 TE Connectivity (7-1571986-2) A101J1AV2Q004AM marking O -
2238156-1 TE Connectivity (2238156-1) MARK II POSITIVE LOCK 22-18
5-2023347-3 TE Connectivity (5-2023347-3) LCEDI UPPER SHELL WITH DATUM MARK PLATED
91592-1 TE Connectivity (91592-1) CERTICRIMP 2 22-18 MIC MARK II
2-1546857-7 TE Connectivity (2-1546857-7) 3P VERT PLUG,GRAY,MARKED

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2010 - uk ac 472m

Abstract: capacitor 222k 1kv samwha sd series 222K 1KV b 472K 1kv ceramic capacitor B 471K 1KV E 222M 2KV 221K 1kv 222m swc 103 1KV SWC
Text: , 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 18, 20, 22, 24 1H Marking D5.0 50V 33, 36, 39 , 220000 100000 Marking D5.0 R 222M 25V 6.3D9.0 R 104M 25V SWC D10.0 22000 4.0 , , 150, 160, 180, 200, 220 5.0 0.50 CC (2.5) 6.3D9.0 D10.0 CC 2H D5.0 6.3D9.0 , CK 1H 06 D5.0 6.3D9.0 6800, 8200, 10000 470, 560, 680 50V DC 2700, 3300, 3900 , 4.0 5.0 0.50 CK 2H 08 D5.0 4700 - 10.0 4.0 5.0 0.50 CK 2H 10 B


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PDF SU03004-2002A SU03004-2001A 250/400V, P02100817 uk ac 472m capacitor 222k 1kv samwha sd series 222K 1KV b 472K 1kv ceramic capacitor B 471K 1KV E 222M 2KV 221K 1kv 222m swc 103 1KV SWC
2010 - 222K 1KV

Abstract: capacitor 222k 1kv 103 1KV SWC 221K 1kv b 472K 1kv ceramic capacitor B 471K 1KV E 472M 3KV capacitor 271k 2kv 102K 1KV CAPACITOR 102k 2kv
Text: , 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 18, 20, 22, 24 1H Marking D5.0 50V 33, 36, 39 , 220000 100000 Marking D5.0 R 222M 25V 6.3D9.0 R 104M 25V SWC D10.0 22000 4.0 , , 150, 160, 180, 200, 220 5.0 0.50 CC (2.5) 6.3D9.0 D10.0 CC 2H D5.0 6.3D9.0 , CK 1H 06 D5.0 6.3D9.0 6800, 8200, 10000 470, 560, 680 50V DC 2700, 3300, 3900 , 4.0 5.0 0.50 CK 2H 08 D5.0 4700 - 10.0 4.0 5.0 0.50 CK 2H 10 B


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PDF 100ppm, 1000ppm 222K 1KV capacitor 222k 1kv 103 1KV SWC 221K 1kv b 472K 1kv ceramic capacitor B 471K 1KV E 472M 3KV capacitor 271k 2kv 102K 1KV CAPACITOR 102k 2kv
2004 - MARKING A50

Abstract: marking D50 marking code A50 EMf-50 628B 628-B NIPPON CAPACITORS EMF-350SDA150MD90G A50 marking
Text: 3 4 5 7 10 B50 & C50 Z(-25C)/Z(+20C) 2 2 2 3 4 6 9 D50 to DC5 2 2 2 2 3 4 7 A50 5 5 6 8 10 13 18 Z(-40C)/Z(+20C) B50 & C50 4 4 5 7 9 12 17 D50 to DC5 (at 120Hz) 3 3 4 6 8 10 15 The following , 2000 hours at 85C. Size code A50 B50 & C50 D50 to DC5 Capacitance change [P30% of the initial value , terminal> @Size code : A50 Marking H+0.1max. ? MARKING @Size code : B50 to DC5 H+0.2max. EX) 6.3V47MF 4 7 6 Marking 0.1max. PP0.3 W+0.2max. 1.6P0.1 L+0.2max. 1.1 1.5P0.2 Dummy terminal (only for


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PDF 50Vdc 7F-250SDA100MD50G EMF-250SDA150MD70G EMF-250SDA220MD90G EMF-250SDA330MDC5G EMF-350SDA1R5MA50N EMF-350SDA2R2MA50N EMF-350SDA2R2MB50G EMF-350SDA3R3MB50G EMF-350SDA4R7MC50G MARKING A50 marking D50 marking code A50 EMf-50 628B 628-B NIPPON CAPACITORS EMF-350SDA150MD90G A50 marking
2004 - 63D50

Abstract: marking D50 EMFK emfk250 NIPPON CAPACITORS 100MF EMFK160 Marking D70
Text: Rated voltage (Vdc) B50 & C50 0.40 0.30 0.24 0.18 0.16 0.14 tanE (Max.) D50 to DC5 0.32 0.28 0.24 , B50 & C50 Z(-25C)/Z(+20C) 3 2 2 2 2 4 D50 to DC5 9 7 5 4 4 12 B50 & C50 Z(-40C)/Z(+20C) 8 6 4 3 3 D50 to DC5 10 (at 120Hz) The following specifications shall be satisfied when the , C50 D50 to DC5 Capacitance change [P30% of the initial value [P20% of the initial value D.F , applied. Size code B50 & C50 D50 to DC5 Capacitance change [P25% of the initial value [P15% of the


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PDF 50Vdc 120Hz) 20C8MC50G EMFK160SDA100MC50G EMFK160SDA150MD70G EMFK160SDA330MD90G EMFK160SDA470MDC5G EMFK250SDA3R3MB50G EMFK250SDA4R7MC50G EMFK250SDA6R8MD50G 63D50 marking D50 EMFK emfk250 NIPPON CAPACITORS 100MF EMFK160 Marking D70
2010 - Not Available

Abstract: No abstract text available
Text: , copper-clad steel (CCFE)D30, D40: 0.025” (22GA) D50 & Larger: 0.032” (20GA) PART NUMBER AND ORDERING INFORMATION 30 D50 W M M Q No Leads Voltage Add to part number if required 30 , -49467 (subgroup 1) except Corona Style D50 , etc. Dielectric N = C0G (NP0) W = X7R Y = X5U 122 Tolerance MARKING (D30) 301M 3kV KEC Date Code (All Other Sizes) D50W122M 3kV KEC Date Code , .250 7.8pF 9.6pF D40 .40 .250 20pF 25pF D50 .50 .375 36pF 44pF


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PDF MIL-PRF-49467 30kVDC 40kDVC 50kVDC 110pF 140pF 100pF 250pF 310pF 190pF
2006 - KEC DATE code

Abstract: Kemet CAPACITOR DATE CODE MARKING ON ceramic MIL-PRF-49467 Kemet CAPACITOR DATE CODE MARKING 7400 Kemet CAPACITOR DATE CODE MARKING radial HV25 KEC MARKING CODE HV26 4XD50W122M
Text: Style D50 , etc. Dielectric N = C0G (NP0) W = X7R Y = X5U Tolerance MARKING (D30) 301M 3kV , of zeros, i.e., 102=1000pF MARKING (HV20, HV21) 103K 1 kV KEC Date Code (All Other Sizes , , etc. Dielectric P = BP C0G (NP0) R = BR (X7R) Z = BZ (X7R) MARKING (All Other Sizes) (HV60, HV61 , C=CSAM MARKING (HS20, HV21) (All Other Sizes) 103K HS24B103K 1 kV 1 kV KEC KEC Date Code Date Code , -20%/+80% Voltage MARKING Not applicable As required by customer only. First two digits are


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PDF 1000pF 4XD50W122M KEC DATE code Kemet CAPACITOR DATE CODE MARKING ON ceramic MIL-PRF-49467 Kemet CAPACITOR DATE CODE MARKING 7400 Kemet CAPACITOR DATE CODE MARKING radial HV25 KEC MARKING CODE HV26
1999 - 50p03l

Abstract: DIN 6880 P-TO252 P-TO252-5 marking D50 SPD50P03L P-TO252-5-3
Text: Marking SPD50P03L P-TO252-5-3 Q67042-S4076 50P03L SPD50P03L PG-TO252-5-3 SP000086729 , current I D,pulse T C=25 °C -200 Avalanche energy, single pulse E AS I D=-50 A, R GS=25 256 Reverse diode dv /dt dv /dt I D=-50 A, V DS=24 V, di /dt =-200 A/µs, T j,max=175 °C , IEC climatic category; DIN IEC 68-1 0) mJ the lead-free type is indicated by a 'G' marking on , on-state resistance R DS(on) V GS=-10 V, I D=-50 A - 5.7 7.0 Transconductance g fs


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PDF SPD50P03L P-TO252-5-3 Q67042-S4076 50P03L PG-TO252-5-3 SP000086729 50P03L DIN 6880 P-TO252 P-TO252-5 marking D50 SPD50P03L P-TO252-5-3
1999 - 50p03l

Abstract: INFINEON DATECODE 50p03 P-TO252-5-3 DIN 6880
Text: Marking 50P03L 50P03L 0) Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous , =25 °C I D=-50 A, R GS=25 I D=-50 A, V DS=24 V, di /dt =-200 A/µs, T j,max=175 °C mJ kV/µs V W °C , type is indicated by a 'G' marking on the package next to the datecode Rev. 1.4 page 1 , GS=-4.5 V, I D=-30 A V GS=-10 V, I D=-50 A |V DS|>2|I D|R DS(on)max, I D=-50 A -30 -1 -1.5 -2 V , Qg V plateau V DD=-24 V, I D=-50 A VDD=-24 V, ID=-50 A, VGS=0 to -10 V VDD=-24 V, ID=-50 A -14 -35


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PDF SPD50P03LG P-TO252-5-3 SPD50P03L SPD50P03L PG-TO252-5-3 50P03L INFINEON DATECODE 50p03 DIN 6880
2008 - 04N03LA

Abstract: IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11
Text: Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications , IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , =4.5 V, I D=50 A - 4.8 5.9 m V GS=4.5 V, I D=50 A, SMD version - 4.6 5.7 V GS=10 V, I D=50 A - 3.4 4.0 V GS=10 V, I D=50 A, SMD version - 3.2 3.8 - 1.3


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PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA P-TO251-3-1 P-TO252-3-11
2006 - 04N03LA

Abstract: 04n03l smd marking D50 P-TO252-3-11 P-TO251-3-1 IPU04N03LA IPS04N03LA IPF04N03LA IPD04N03LA smd diode marking c3
Text: Product Summary Package V DS Marking · Qualified according to JEDEC1) for target applications , IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking 04N03LA , AS I D=45 A, R GS=25 600 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt , =4.5 V, I D=50 A - 4.8 5.9 m V GS=4.5 V, I D=50 A, SMD version - 4.6 5.7 V GS=10 V, I D=50 A - 3.4 4.0 V GS=10 V, I D=50 A, SMD version - 3.2 3.8 - 1.3


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PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA 04n03l smd marking D50 P-TO252-3-11 P-TO251-3-1 smd diode marking c3
2006 - Not Available

Abstract: No abstract text available
Text: Product Summary Package V DS Marking • Qualified according to JEDEC1) for target applications , IPS04N03LA IPU04N03LA Package P-TO252-3-11 P-TO252-3-23 P-TO251-3-11 P-TO251-3-1 Marking , , single pulse E AS I D=45 A, R GS=25 Ω 600 Reverse diode dv /dt dv /dt I D=50 A, V DS , ) V GS=4.5 V, I D=50 A - 4.8 5.9 mΩ V GS=4.5 V, I D=50 A, SMD version - 4.6 5.7 V GS=10 V, I D=50 A - 3.4 4.0 V GS=10 V, I D=50 A, SMD version - 3.2 3.8


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PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23
1999 - 06N03LB

Abstract: PG-TO252-3-11 IPD06N03LB Q67042-S4263
Text: Type Ordering Code IPD06N03LB G Marking PG-TO252-3-11 Q67042-S4263 Package PG-TO251-3-11 On request Code Ordering PG-TO252-3-23 On request Marking 06N03LB 06N03LB PG-TO251-3-1 On request , , T stg T C=25 °C T C=25 °C3) I D=50 A, R GS=25 I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C , D=30 A V GS=4.5 V, I D=30 A, SMD version V GS=10 V, I D=50 A V GS=10 V, I D=50 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 30 1.2 1.6 0.1 Values typ


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PDF IPD06N03LB IPU06N03LB IPS06N03LB IPF06N03LB PG-TO252-3-11 06N03LB Q67042-S4263
2013 - Not Available

Abstract: No abstract text available
Text: according to IEC61249-2-21 Type Package Marking BSC026N04LS PG-TDSON-8 026N04LS Maximum , ) E AS I D=50 A, R GS=25 W 50 mJ Gate source voltage V GS ±20 V 1) J-STD20 , resistance R DS(on) V GS=10 V, I D=50 A - 2.1 2.6 mW V GS=4.5 V, I D=50 A - 2.6 , Rev. 2.0 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2013-09-04 BSC026N04LS Parameter , V DD=20 V, I D=50 A, V GS=0 to 4.5 V - 16 - nC Gate charge total, sync. FET Q g


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PDF BSC026N04LS IEC61249-2-21 026N04LS
1999 - 09n03lb

Abstract: PG-TO252-3-23
Text: Package IPD09N03LB G Ordering Code IPF09N03LB G Marking PG-TO252-3-11 Package PG-TO251-3-11 Ordering Code PG-TO252-3-23 Marking 09N03LB On request 09N03LB 09N03LB PG-TO251-3-1 On request 09N03LB , E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=50 A, R GS=25 I D=50 A, V DS=20 V, di , R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=25 A V GS=4.5 V, I D=25 A, SMD version V GS=10 V, I D=50 A V GS=10 V, I D=50 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max


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PDF IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB 09n03lb PG-TO252-3-23
2013 - Not Available

Abstract: No abstract text available
Text: Package Marking BSC028N06NS PG-TDSON-8 028N06NS Maximum ratings, at T j=25 °C, unless , ) E AS I D=50 A, R GS=25 W 100 mJ Gate source voltage V GS ±20 V 1 , V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=50 , resistance R DS(on) V GS=10 V, I D=50 A - 2.5 2.8 mW V GS=6 V, I D=12.5 A - 3.4 , fs Rev.2.1 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2013-01-18 BSC028N06NS


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PDF BSC028N06NS IEC61249-2-21 028N06NS
2012 - Not Available

Abstract: No abstract text available
Text: to IEC61249-2-21 Type Package Marking BSC010N04LSI PG-TDSON-8 (Fused Leads , I D=50 A, R GS=25 W 230 mJ Gate source voltage V GS ±20 V 1) J-STD20 and , resistance R DS(on) V GS=4.5 V, I D=50 A - 1.1 1.4 mW V GS=10 V, I D=50 A - 0.9 , |V DS|>2|I D|R DS(on)max, I D=50 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 , Gate plateau voltage V plateau - 2.4 - V Gate charge total Qg V DD=20 V, I D=50


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PDF BSC010N04LSI IEC61249-2-21 010N04LI
2012 - Not Available

Abstract: No abstract text available
Text: ) Marking 014N04LI Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain , 31 400 50 90 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 W , resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=50 A V GS=10 V, I D=50 A Gate resistance , mW RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 110 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB , Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=20 V, I D=50 A, V GS=0 to 4.5 V V DS


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PDF BSC014N04LSI IEC61249-2-21 014N04LI
2013 - Not Available

Abstract: No abstract text available
Text: enlarged source interconnection Type Package Marking BSC010N04LSI PG-TDSON-8 FL 010N04LI , , single pulse4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS , resistance R DS(on) V GS=4.5 V, I D=50 A - 1.1 1.4 mW V GS=10 V, I D=50 A - 0.9 , Rev.2.1 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2013-09-18 BSC010N04LSI Parameter , total Qg V DD=20 V, I D=50 A, V GS=0 to 4.5 V - 45 - nC Gate charge total, sync


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PDF BSC010N04LSI IEC61249-2-21 010N04LI
2011 - BSC028N06ns

Abstract: 028N06NS
Text: mW A nC nC 43 37 Type BSC028N06NS Package PG-TDSON-8 Marking 028N06NS Maximum ratings , ) I D,pulse E AS V GS T C=25 °C I D=50 A, R GS=25 W mJ V J-STD20 and JESD22 Device on 40 mm x , drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=50 µA V DS=60 V, V GS=0 V, T j , R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=50 A V GS=6 V, I D=12.5 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 60 2.8 0.5 1 µA V 50 10 10 2.5 5.0 1.3 100 100


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PDF BSC028N06NS IEC61249-2-21 028N06NS 50K/W BSC028N06ns 028N06NS
varistor svc 561 14

Abstract: Z5U 103M 1KV samwha capacitor part numbers SVC 561 14 varistor 472m varistor svc 471 14 SVC 561 10 Varistor sck 055 varistor 332m varistor SVC 561
Text: ) Appearance No marking defects 1±0.2Vrms X7R, X5R, Y5V (C >10) Y5V 5%/ 7%/ 9% 12.5%/ 15% 9 , marking defects - Testing time : 1000±12hrs Within ±3% or ±0.3 (whichever is larger) X7R, X5R , Constant Type No marking defects Capacitance Within ±2.5% or ±0.25 Change (whichever is larger , % 12.5%/ 15% 12.5% 15% Appearance No marking defects Capacitance Within ±5% or ±0.5 Change , marking defects shall occur Capacitance Within ±5% or ±0.5 Change (whichever is larger) Test Methods


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PDF revoluti90 varistor svc 561 14 Z5U 103M 1KV samwha capacitor part numbers SVC 561 14 varistor 472m varistor svc 471 14 SVC 561 10 Varistor sck 055 varistor 332m varistor SVC 561
2013 - Not Available

Abstract: No abstract text available
Text: ) 40 2.2 100 33 37 V mW A nC nC PG-TDSON-8 Type BSC022N04LS Package PG-TDSON-8 Marking , ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 W J-STD20 and JESD22 , resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=50 A V GS=10 V, I D=50 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 40 1.2 0.1 2 1 µA V 90 10 10 2.3 1.8 1.1 180 , (th) Q gd Q sw Qg V plateau Qg V DD=20 V, I D=50 A, V GS=0 to 4.5 V V DS=0.1 V, V GS=0 to 4.5 V V DD


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PDF BSC022N04LS IEC61249-2-21 022N04LS
2008 - IEC61249-2-21

Abstract: JESD22 19N02KS BSC019N02KS W2A30
Text: to IEC61249-2-21 Type Package Marking BSC019N02KS G PG-TDSON-8 19N02KS Maximum , AS I D=50 A, R GS=25 800 Reverse diode dv /dt dv /dt I D=50 A, V DS=16 V, di /dt , R DS(on) V GS=2.5 V, I D=50 A - 2.3 3.0 m V GS=4.5 V, I D=50 A - 1.6 1.95 , DS|>2|I D|R DS(on)max, I D=50 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 , - 400 V DD=10 V, V GS=4.5 V, I D=50 A, R G=1.6 ns Gate Charge Characteristics 4) V


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PDF BSC019N02KS IEC61249-2-21 19N02KS IEC61249-2-21 JESD22 19N02KS W2A30
2006 - 04N03

Abstract: PG-TO252-3-11 04n03l IPD04N03LB IPU04N03LB PG-TO252-3-23
Text: -3-1 Marking 04N03LB 04N03LB 04N03LB 04N03LB Maximum ratings, at T j=25 °C, unless otherwise , energy, single pulse E AS I D=50 A, R GS=25 430 Reverse diode dv /dt dv /dt I D=50 A , ) V GS=4.5 V, I D=50 A - 4.9 6.0 m V GS=4.5 V, I D=50 A, SMD version - 4.7 5.8 V GS=10 V, I D=50 A - 3.7 4.3 V GS=10 V, I D=50 A, SMD version - 3.5 4.1 , DS|>2|I D|R DS(on)max, I D=50 A 1) J-STD20 and JESD22 1) Current is limited by bondwire


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PDF IPD04N03LB IPU04N03LB IPS04N03LB IPF04N03LB PG-TO252-3-11 PG-TO251-3-11 04N03 PG-TO252-3-11 04n03l PG-TO252-3-23
2008 - PG-TDSON-8

Abstract: JESD22
Text: thermal resistance · Avalanche rated · Pb-free plating; RoHS compliant Type Package Marking , Avalanche energy, single pulse E AS I D=50 A, R GS=25 800 Reverse diode dv /dt dv /dt I D=50 , Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=50 A - 2.3 3.0 m V GS=4.5 V, I D=50 , Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB , 100 - - 400 V DD=10 V, V GS=4.5 V, I D=50 A, R G=1.6 ns Gate Charge


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PDF BSC019N02KS 19N02KS PG-TDSON-8 JESD22
2012 - BSC014N04LS

Abstract: 014N04LS BSC014N04
Text: ) Marking 014N04LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain , 32 400 50 170 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 W , on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=50 A V GS=10 V, I D=50 A Gate , 1.9 1.4 W S nA mW RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 120 Device on 40 mm x 40 mm x , Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=20 V, I D=50 A, V GS=0 to 4.5 V V DS


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PDF BSC014N04LS IEC61249-2-21 014N04LS BSC014N04LS 014N04LS BSC014N04
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