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Part Manufacturer Description Datasheet Download Buy Part
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver

mar 835 mosfet Datasheets Context Search

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mar 835 mosfet

Abstract:
Text: SPICE Device Model Si2399DS Vishay Siliconix P-Channel 20 V (D-S) MOSFET DESCRIPTION The , . Document Number: 67605 S11-0398-Rev. A, 14- Mar -11 www.vishay.com 1 This datasheet is subject to change , - 10 V, VGS = 0 V, f = 1 MHz 834 181 154 9 6 1.7 3.4 835 180 155 10 6.4 1.7 3.4 nC pF VGS(th) RDS(on , -0398-Rev. A, 14- Mar -11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND , Voltage (V) Note Dots and squares represent measured data. Document Number: 67605 S11-0398-Rev. A, 14- Mar


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PDF Si2399DS 18-Jul-08 mar 835 mosfet Si2399
Not Available

Abstract:
Text: AOB411L 60V P-Channel MOSFET General Description Product Summary The AOB411L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This , TC=100°C Rev 0: Mar . 2011 -8 EAS, EAR Avalanche Current C A -55 -230 IDSM , 83.5 ns 37 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR , NOTICE. Rev 0: Mar . 2011 www.aosmd.com Page 2 of 6 AOB411L TYPICAL ELECTRICAL AND THERMAL


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PDF AOB411L AOB411L
2011 - AOB411L

Abstract:
Text: AOB411L 60V P-Channel MOSFET General Description The AOB411L combines advanced trench MOSFET , °C/W Rev 0: Mar . 2011 www.aosmd.com Page 1 of 6 AOB411L Electrical Characteristics , Reverse Recovery Time VGS=-10V, VDS=-30V, RL=1.5, RGEN=3 IF=-20A, dI/dt=500A/µs 18 110 20 83.5 37 27 , AND RELIABILITY WITHOUT NOTICE. Rev 0: Mar . 2011 www.aosmd.com Page 2 of 6 AOB411L , (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev 0: Mar . 2011 www.aosmd.com Page 3 of 6


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PDF AOB411L AOB411L mar 835 mosfet
2005 - mar 835 mosfet

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Text: APM4542K Dual Enhancement Mode MOSFET (N-and P-Channel) Pin Description Features · , ) D2 (6) N-Channel MOSFET P-Channel MOSFET Systems Ordering and Marking Information Package , . B.1 - Mar ., 2005 1 www.anpec.com.tw APM4542K Absolute Maximum Ratings Symbol (TA = 25 , P-Ch ±100 Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. B.1 - Mar , =25V, Frequency=1.0MHz N-Ch 835 P-Ch 950 N-Ch 145 P-Channel VGS=0V, VDS=-25V, Diode


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PDF APM4542K -30V/-5 mar 835 mosfet 4542 mosfet APM4542K apm 1250 mosfet 4542 STD-020C ua782
T01A transistor

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Text: Reliability P16 P17 P18 P19 P20 P21 P22 P23 P23 P23 Data Sheet Mar . 25, 2009 15W Single , Vdc Vdc Vdc Vdc A A A A F F F F PXA15-xxSxx 2 Data Sheet Mar . 25, 2009 15W , Typ 86 87 87 88 85 87 87 88 PXA15-xxSxx 3 Data Sheet Mar . 25, 2009 15W Single , ) 80 75 36Vin 24Vin 18Vin 70 65 85.5 85 84.5 84 83.5 60 83 350 700 1050 , Data Sheet Mar . 25, 2009 15W Single Output PXA15-24S05 Characteristic Curves All test


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PDF PXA15-xxSxx PXA15 TR-NWT-000332 T01A transistor smd transistor device marking p18 T01A transistor T01A 24S12 24S15 smd transistor p15 smd transistor p16
2006 - mar 835 mosfet

Abstract:
Text: · · · Inherently Uniform LED Current High Efficiency up to 83.5 % No Need for External Schottky Diode , Receivers PDAs, Handheld Computers SOT-23-6 TSOT-23-6 Figure 1. Package Types of AP3029 Mar , Supply Pin. Must be locally bypassed Function Mar . 2009 Rev. 1. 5 2 BCD Semiconductor Manufacturing , in green packages. Mar . 2009 Rev. 1. 5 3 BCD Semiconductor Manufacturing Limited Data Sheet , Voltage Symbol TOP VIN VCTRL Min -40 2.5 Max 85 16 16 Unit o C V V Mar . 2009 Rev. 1. 5 4 BCD


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PDF AP3029 AP3029. mar 835 mosfet marking digital transistor 1006 sot-23-6 led driver Marking Information
2005 - Not Available

Abstract:
Text: 5mmx10mm LIGHT BAR L- 835 /2IDT HIGH EFFICIENCY RED Description Features UNIFORM LIGHT , are subject to change without notice. SPEC NO: DSAB7655 REV NO: V4 DATE: MAR /23/2005 , . Dice Iv (mcd) @ 10mA Lens Type Viewing Angle Min. L- 835 /2IDT HIGH EFFICIENCY RED , package base. SPEC NO: DSAB7655 REV NO: V4 DATE: MAR /23/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI PAGE: 2 OF 3 High Efficiency Red L- 835 /2IDT Remarks: If special


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PDF 5mmx10mm L-835/2IDT DSAB7655 MAR/23/2005
2005 - Not Available

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Text: 5mmx10mm LIGHT BAR L- 835 /2GDT GREEN Description Features UNIFORM LIGHT EMITTING AREA , : DSAB7653 REV NO: V.5 DATE: MAR /23/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI , Min. L- 835 /2GDT GREEN (GaP) Typ. 2 1/2 1.8 5 120° GREEN DIFFUSED Note: 1. 1 , base. 3. 5mm below package base. SPEC NO: DSAB7653 REV NO: V.5 DATE: MAR /23/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI PAGE: 2 OF 3 Green L- 835 /2GDT Remarks: If


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PDF 5mmx10mm L-835/2GDT DSAB7653 MAR/23/2005
2005 - Not Available

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Text: 5mmx10mm LIGHT BAR L- 835 /2YDT YELLOW Description Features UNIFORM LIGHT EMITTING AREA , to change without notice. SPEC NO: DSAB7654 REV NO: V.4 DATE: MAR /23/2005 APPROVED: J. Lu , 10mA Lens Type Viewing Angle Min. L- 835 /2YDT YELLOW (GaAsP/GaP) Typ. 2 1/2 5 , : DSAB7654 REV NO: V.4 DATE: MAR /23/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI PAGE: 2 OF 3 Yellow L- 835 /2YDT Remarks: If special sorting is required (e.g. binning based


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PDF 5mmx10mm L-835/2YDT DSAB7654 MAR/23/2005
2005 - Not Available

Abstract:
Text: 5mmx10mm LIGHT BAR L- 835 /2SRDT Features SUPER BRIGHT RED Description UNIFORM LIGHT , to change without notice. SPEC NO: DSAD0641 REV NO: V.3 DATE: MAR /23/2005 APPROVED: J. Lu , 20mA Lens Type Viewing Angle Min. L- 835 /2SRDT SUPER BRIGHT RED (GaAIAs) Typ. 2 1/2 , .3 DATE: MAR /23/2005 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI PAGE: 2 OF 3 Super Bright Red L- 835 /2SRDT Remarks: If special sorting is required (e.g. binning based on forward


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PDF 5mmx10mm L-835/2SRDT DSAD0641 MAR/23/2005
2003 - Not Available

Abstract:
Text: 5mmx10mm LIGHT BAR L- 835 /2YDT YELLOW Features !UNIFORM Description LIGHT EMITTING AREA , . SPEC NO: DSAB7654 APPROVED: J.Lu REV NO: V.2 CHECKED: Allen Liu DATE: MAR /15/2003 DRAWN: K.ZHANG PAGE: 1 OF 3 Selection Guide P ar t N o . Dic e L en s Ty p e Iv (m c d ) @ 10 m A Min . L- 835 , mW mA mA V SPEC NO: DSAB7654 APPROVED: J.Lu REV NO: V.2 CHECKED: Allen Liu DATE: MAR /15/2003 DRAWN: K.ZHANG PAGE: 2 OF 3 Yellow L- 835 /2YDT SPEC NO: DSAB7654 APPROVED: J.Lu REV NO: V


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PDF 5mmx10mm L-835/2YDT DSAB7654 MAR/15/2003 L-835/2YDT
2002 - Not Available

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Text: MHz INPUT RETURN URN LOSS AND GAIN. GAI PRm CH1 Mar Markers 2:-21 . 105 dB 849. 000 MHz SMA-M SMA-F , . 000 000 MHz OUTPUT RETURN PRm CH1 Mar Markers 2:-29 . 898 dB 849. 000 MHz Cor Cor 1 2 1 PRm 2 PRm 1 2 Cor CH2 Mar Markers 2: 21. 654 dB 849. 000 MHz Cor 1 CH2 Mar Markers 2: 21 21. 680 dB 849. 000 MHz 2 CENTER 835 . 250 000 MHz SPAN 100. 000 000 MHz CENTER 835 . 250


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PDF connectorsS21
2003 - Not Available

Abstract:
Text: 5mmx10mm LIGHT BAR L- 835 /2SRDT SUPER BRIGHT RED Features !UNIFORM Description LIGHT , : DSAD0641 APPROVED: J. Lu REV NO: V.1 CHECKED: Allen Liu DATE: MAR /15/2003 DRAWN: K.ZHANG PAGE: 1 OF 3 Selection Guide P ar t N o . L- 835 /2SRDT Dic e SUPER BRIGHT RED (GaAlAs) L en s Ty p e RED , it s mW mA mA V SPEC NO: DSAD0641 APPROVED: J. Lu REV NO: V.1 CHECKED: Allen Liu DATE: MAR /15/2003 DRAWN: K.ZHANG PAGE: 2 OF 3 Super Bright Red L- 835 /2SRDT SPEC NO: DSAD0641


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PDF 5mmx10mm L-835/2SRDT DSAD0641 MAR/15/2003 L-835/2SRDT
EVQPAD04M

Abstract:
Text: 5.0 mm 7.0 mm 9.5 mm 3.15 mm 3.85 mm 5.85 mm 8.35 mm Without positioning pin Without , . Should a safety concern arise regarding this product, please be sure to contact us immediately. Mar , product, please be sure to contact us immediately. Mar . 2005 Light Touch Switches/5N Type , cycles EVQPF006K 1.0 N 5.85 mm Black 100000 cycles EVQPF008K 1.0 N 8.35 mm , 1.3 N 8.35 mm Black 100000 cycles EVQPF203M 1.6 N 3.15 mm White 100000 cycles


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PDF EVQPC205K EVQPC305K EVQPC405K EVQPCP05K EVQPC605K EVQPC705K EVQPAD04M EVQPAG04M EVQPAE05R EVQPAE04M EVQPAD09K EVQPAD07K EVQPAD05R EVQPAC09K EVQPAC07K EVQPAC05R
2012 - VJ5601

Abstract:
Text: bandwidth ( 835 to 995 MHz) · High-reliability ceramic-oxide body construction · Low-RF loss, high-Q ceramic , temperature: - 40 °C to + 85 °C Frequency range (transmission/reception): 835 MHz to 995 MHz Note · , REFLECTED 835 MHz to FREQUENCY IMPEDANCE PEAK COEFFICIENT POWER POWER GAIN POWER 937 MHz 995 MHz GAIN (MHz , % 3 dB 41 10 % 0.46 dB Revision: 28- Mar -12 Document Number: 45208 1 For technical questions , / Power Reflection S11 (dB) Versus Frequency (MHz) 835 875 915 955 995 MHz 180° -165° 0 Power


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PDF VJ5601M915MXBSR VJ5601M915MXBSR 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VJ5601 VJ5601M915MXBEK
2012 - VJ5301M915MXBEK

Abstract:
Text: bandwidth ( 835 to 995 MHz) · High-reliability ceramic-oxide body construction · Low-RF loss, high-Q ceramic , temperature: - 40 °C to + 85 °C Frequency range (transmission/reception): 835 MHz to 995 MHz Note · , REFLECTED 835 MHz to FREQUENCY IMPEDANCE PEAK COEFFICIENT POWER POWER GAIN POWER 935 MHz 995 MHz GAIN (MHz , 10 % 0.46 dB Revision: 28- Mar -12 Document Number: 45207 1 For technical questions, contact , / Power Reflection S11 (dB) Versus Frequency (MHz) 0 Power Reflection S11 dB (50 ) 835 875


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PDF VJ5301M915MXBSR VJ5301M915MXBSR 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VJ5301M915MXBEK mbrai VJ5301 VJ5301M VJ5301M9
2015 - VJ5301

Abstract:
Text: tuned bandwidth ( 835 to 995 MHz) • High-reliability ceramic-oxide body construction • Low-RF loss , SPECIFICATIONS Frequency range (transmission/reception): 835 MHz to 995 MHz Note • Electrical , AVERAGE PEAK REFLECTED 835 MHz to REFLECTED 886 MHz to REFLECTED FREQUENCY IMPEDANCE COEFFICIENT POWER , ) (MHz) 915 50 Revision: 28- Mar -12 1.73 4.73 < - 20 dB 1% 1% < 0.05 dB 160 , Capacitor C1 150° 75° 60° 45° 30° -18 0 835 875 915 955 995 MHz


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PDF VJ5301M915MXBSR VJ5301M915MXBSR WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC. 2002/95/EC 2011/65/EU. VJ5301 VJ5301M VJ5301M9
2006 - EVQPAD04M

Abstract:
Text: 5.0 mm 7.0 mm 9.5 mm 3.15 mm 3.85 mm 5.85 mm 8.35 mm Without positioning pin Without , product, please be sure to contact us immediately. Mar . 2005 Light Touch Switches/5N Type , contact us immediately. Mar . 2005 Light Touch Switches/5N Type Dimensions in mm (not to scale , 1.0 N 5.85 mm Black 100000 cycles EVQPF008K 1.0 N 8.35 mm Black 100000 cycles , cycles EVQPF106K 1.3 N 5.85 mm Black 100000 cycles EVQPF108K 1.3 N 8.35 mm


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PDF EVQPC205K EVQPC305K EVQPC405K EVQPCP05K EVQPC605K EVQPC705K EVQPAD04M EVQPF108K EVQPAE05R EVQPAE04M EVQPAD09K EVQPAD07K EVQPAD05R EVQPAC09K EVQPAC07K EVQPAC05R
lv 5682

Abstract:
Text: : J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz , malfunction or mishap. Revision date: 12 / Mar .'02 ATTENTION O B S liK V E P R E C A U T IO N S FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power , DEVICES RD60HUF1 Silicon MOSFET Power Transistor, 520MHz 60W *V gs 3. IKQ fOOQ ·-'M r- vW · C , 0.938 0.938 0.940 0.943 0.946 Silicon MOSFET Power Transistor, 520M Hz 60W ATTENTION OBSERVE


OCR Scan
PDF RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837
2015 - Not Available

Abstract:
Text: half-power tuned bandwidth ( 835 to 995 MHz) • High-reliability ceramic-oxide body construction • Low-RF , SPECIFICATIONS Frequency range (transmission/reception): 835 MHz to 995 MHz Note • Electrical , AVERAGE PEAK REFLECTED 835 MHz to REFLECTED 894 MHz to REFLECTED FREQUENCY IMPEDANCE COEFFICIENT POWER , ) (MHz) 915 50 Revision: 28- Mar -12 - 2.73 1.73 < - 32 dB 0.6 % 0.6 % < 0.003 dB , Inductors L1, L2 and Capacitor C1 150° 60° 45° 30° -21 165° 835 875 915 955


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PDF VJ5601M915MXBSR VJ5601M915MXBSR WO2008250262 US2008303720 US2008305750 WO2008154173 2002/95/EC. 2002/95/EC 2011/65/EU.
2008 - push switch

Abstract:
Text: arise regarding this product, please be sure to contact us immediately. Mar . 2008 Light Touch , EVQPF006K 1.0 N 5.85 mm Black 100000 cycles EVQPF008K 1.0 N 8.35 mm Black 100000 , 100000 cycles EVQPF106K 1.3 N 5.85 mm Black 100000 cycles EVQPF108K 1.3 N 8.35 mm , 1.6 N 8.35 mm Black 100000 cycles EVQPF303M 2.6 N 3.15 mm White 50000 cycles , cycles EVQPF308K 2.6 N 8.35 mm Black 50000 cycles Design and specifications are each


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PDF EVQPF203M EVQPF204R EVQPF206K EVQPF208K EVQPF303M EVQPF304R EVQPF306K EVQPF308K push switch touch switch on off types of transistors EVQPF108K EVQPF204R EVQPF203M EVQPF106K EVQPF104R EVQPF103M EVQPF006K
Not Available

Abstract:
Text: , f = 1 MHz, Tj = 25 °C VR = 45 V, f = 1 MHz, Tj = 25 °C Values typ. 1.1 1 1.2 835 4910 , , junction - case Figure 1: Typical Forward Characteristics(Per Leg) Mar 2012  2.16 RthJC °C , , MOLD FLASH, MATERIAL PROTRUSIONS Mar 2012  http://www.genesicsemi.com/index.php , may result in death, personal injury and/or property damage. Mar 2012  http


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PDF MBR40045CTS php/silicon-products/sot227
2012 - Not Available

Abstract:
Text: , Tj = 25 °C VR = 45 V, f = 1 MHz, Tj = 25 °C Values typ. 1.1 1 1.2 835 4910 1399 1032 , RthJC Figure 1: Typical Forward Characteristics(Per Leg) Mar 2012 2.16 °C/W Figure 2 , PROTRUSIONS Mar 2012 / Pg2 of 3 , damage. Mar 2012 / Pg3 of 3


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PDF MBR40045CTS
Not Available

Abstract:
Text: , f = 1 MHz, Tj = 25 °C VR = 45 V, f = 1 MHz, Tj = 25 °C Values typ. 1.1 1 1.2 835 4910 , , junction - case Figure 1: Typical Forward Characteristics(Per Leg) Mar 2012  2.16 RthJC , , MOLD FLASH, MATERIAL PROTRUSIONS Mar 2012  http://www.genesicsemi.com/index.php , may result in death, personal injury and/or property damage. Mar 2012  http


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PDF MBR40045CTS php/silicon-products/sot227
2011 - Not Available

Abstract:
Text: DD1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems AVAILABLE FOR: · TSOP58. · TSOP59. · TSOP38. 1 2 3 19790 · TSOP39. · TSOP98. "X" "H" "W" 20244 NAME DD1 LENS AXIS (X) 8.35 VIEW TYPE Cut HEIGHT (H) 11.05 WIDTH (W) 5 DEPTH (D , .: 6.550-5263.05-4 Issue: 1; 25.02.09 21763 R2 Document Number: 81136 Rev. 1.1, 02- Mar -11 www.vishay.com 1 , www.vishay.com 2 Document Number: 81136 Rev. 1.1, 02- Mar -11 Vishay Semiconductors


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PDF TSOP58. TSOP59. TSOP38. TSOP39. TSOP98. 02-Mar-11 TSOP58238DD1
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