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Part Manufacturer Description Datasheet Download Buy Part
RH07MJ Linear Technology IC OP-AMP, 300 uV OFFSET-MAX, CDIP8, CERAMIC, DIP-8, Operational Amplifier
RH1011J8 Linear Technology IC COMPARATOR, 3000 uV OFFSET-MAX, CDIP8, CERAMIC, DIP-8, Comparator
RH07J Linear Technology IC OP-AMP, CDIP8, CERAMIC, DIP-8, Operational Amplifier
RH1009W Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, CDFP10, CERAMIC, PACKAGE-10, Voltage Reference
LT1077CIJ8 Linear Technology IC OP-AMP, CDIP8, CERAMIC, DIP-8, Operational Amplifier
LT1039CJ16 Linear Technology IC LINE TRANSCEIVER, CDIP16, CERAMIC, DIP-16, Line Driver or Receiver

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2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 npn UHF transistor 2N5179 10 GHz PNP transistor 2N2857 MOTOROLA MOTOROLA 2N5179 RF POWER TRANSISTOR NPN, motorola 2n2857 2n4957
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 2N5829 2N5031 MRF904 MRF571 RF572/M RF2369 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters 2n5179 npn UHF transistor 2N5179 10 GHz PNP transistor 2N2857 MOTOROLA MOTOROLA 2N5179 RF POWER TRANSISTOR NPN, motorola 2n2857 2n4957
2N5109 motorola

Abstract: BFY90 MOTOROLA MRF965 2N5583 bfr91 motorola MOTOROLA 2N5179 MRF586 macro-X ceramic 2N3866A 2n4427 MOTOROLA
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA MRF965 2N5583 bfr91 motorola MOTOROLA 2N5179 MRF586 macro-X ceramic 2N3866A 2n4427 MOTOROLA
case 317-01

Abstract: MRF2369 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these , 8.0 5.0 1.0* 500 5.0 13.5 500 10 70 2500 *Typ *PNP Ceramic — SOE — Case 244A-01, 303-01 Gain


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PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 case 317-01 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
MRF536

Abstract: 2n4427 MOTOROLA motorola 2N4427 Y parameters of transistors 2n5160 mrf901 2N3948 MRF586 BFY90 MOTOROLA 2N5583
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 2N3866, 2N3866A 2N5160, MM4018, 2N3948, 2N4427, MRF207 2N5109, MRF536 2n4427 MOTOROLA motorola 2N4427 Y parameters of transistors 2n5160 mrf901 2N3948 MRF586 BFY90 MOTOROLA 2N5583
MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR MRF586 MRF542 BFY90 MOTOROLA 2n6603 transistor RF 2N3866
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR MRF586 MRF542 BFY90 MOTOROLA 2n6603 transistor RF 2N3866
2n5835

Abstract: 2n4957 mrf502 transistor rf power package selection guide MRF542 MRF502 low noise transistor cross MRF965 motorola 2N3866 2N5179
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor rf power package selection guide MRF542 low noise transistor cross MRF965 motorola 2N3866
MOTOROLA SELECTION mrf237

Abstract: Motorola transistors MRF630 MRF515 2N3948 mrf237 MOTOROLA 2N3553 motorola MRF604 MRF630 MOTOROLA Transistor MRF630 motorola MRF515
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 MRF237* MRF207 MRF227* MRF525* 2N3866 2N5160f MRF313 05A-1 MOTOROLA SELECTION mrf237 Motorola transistors MRF630 MRF515 2N3948 mrf237 MOTOROLA 2N3553 motorola MRF604 MRF630 MOTOROLA Transistor MRF630 motorola MRF515
MRF542

Abstract: mrf544 transistor bfr96 MRF545 BFR90 transistor high gain PNP RF TRANSISTOR MRF543 MRF511 motorola 2N4427 2n4427
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF542 mrf544 transistor bfr96 MRF545 BFR90 transistor high gain PNP RF TRANSISTOR MRF543 MRF511 motorola 2N4427 2n4427
900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 MRF2369 case 317-01 MRF586 motorola mrf237
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these , MRF571 8.0 5.0 1.0* 500 5.0 13.5 500 10 70 2500 *Typ *PNP Ceramic — SOE — Case 244A-01, 303-01


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PDF 17A-01 05A-01 mrf559 mrf581 mrf837 mrf8372 mrf838/a 305a-01 mrf557 317d-01 900 mhz oscillator using bfr91 transistor Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 MRF2369 case 317-01 MRF586 motorola mrf237
2N5109 motorola

Abstract: MRF536 BFR90 application 244A-01 MRF586 MRF931 MRF961 2N5943 mrf517 MRF525
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these , Ceramic — SOE — Case 244A-01, 303-01 Gain - BW Noise Figure Gain Maximum Ratings n 'C NF f 'C


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PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application 244A-01 MRF586 MRF931 MRF961 2N5943 mrf517 MRF525
MRF536

Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA MRF229 MRF227 s-parameter 2N4427 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters MRF237
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 MRF536 MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA MRF229 MRF227 s-parameter 2N4427 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters MRF237
mrf502 gold transistor

Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 MRF536 MRF525 MRF931 MRF2369 BFR96 MRF911
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these , 1000 5.0 10 1000 15 70 750 MRF571 8.0 5.0 1.0* 500 5.0 13.5 500 10 70 2500 *Typ *PNP Ceramic â


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PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 mrf502 gold transistor Motorola transistors MRF630 2N3948 transistor 2n4959 MRF536 MRF525 MRF931 MRF2369 BFR96 MRF911
2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA motorola european master selection MOTOROLA 2N5179 2n4958 Y parameters of transistors
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 high gain PNP RF TRANSISTOR 2N4957 2N3866 MOTOROLA 2N2857 MOTOROLA motorola european master selection MOTOROLA 2N5179 2n4958 Y parameters of transistors
MOTOROLA TRANSISTOR MRF239

Abstract: MRF239 MRF212 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA MRF238 mrf239 MOTOROLA MRF260 MRF237 145A-09
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 45A-09 MRF264 T0-220AB MRF1946/A# 2N6084 MRF224 MRF4070* MOTOROLA TRANSISTOR MRF239 MRF239 MRF212 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA MRF238 mrf239 MOTOROLA MRF260 MRF237 145A-09
2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 2N3553 motorola MRF536 Transistor 2N3866 TO205AD
Text:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ceramic and microminiature. Most of these transistors are fully characterized with y or s parameters; and in addition, there are non-saturated


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PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 2N3553 motorola MRF536 Transistor 2N3866 TO205AD
Silicon Bipolar Transistor 35 MICRO-X

Abstract: B30V1160 B30V140 Silicon Bipolar Transistor MICRO-X
Text: dB @ 1.0 GHz · SYMBOL Ceramic , BeO & Stripline packages available RATING UNITS , POWER SILICON MICROWAVE TRANSISTOR Package Style 35: Micro-X 0.085" Ceramic Package Style 70: 0.070


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PDF B30V140 B30V140 B30V180 B30V1160 Silicon Bipolar Transistor 35 MICRO-X Silicon Bipolar Transistor MICRO-X
GHZ micro-X Package

Abstract: MICROWAVE TRANSISTOR MICRO-X Micro-X ceramic npn Silicon Bipolar Transistor 35 MICRO-X micro-x transistor BRF61004 BRF61035 BRF61002 PACKAGE STYLE 51
Text: of packages are offered including SOT-23, SOT-143, plastic and ceramic 0.085" Micro-X, 0.070 , TRANSISTOR BRF61035 Package Style 35: Micro-X 0.085" Ceramic LEAD Package Style 14, 85, 35 & 10 1


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PDF BRF610 BRF610is BRF610an OT-23, OT-143, BRF61002 OT-23 BRF61014 BRF61092 OT-143 GHZ micro-X Package MICROWAVE TRANSISTOR MICRO-X Micro-X ceramic npn Silicon Bipolar Transistor 35 MICRO-X micro-x transistor BRF61004 BRF61035 BRF61002 PACKAGE STYLE 51
Not Available

Abstract: No abstract text available
Text: I^E.U <^£.m.i.-L,onaucboi l/-\oauc£i, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Line MRF571 MRF572 MRFC572 NPN SILICON HIGH FREQUENCY TRANSISTORS . designed for low-noise, wide dynamic range front end amplifiers, low-noise VCO's, and microwave power multipliers. • Low Noise • High Gain • Available in Low Cost Plastic, High Reliability Ceramic or Die fr = NF = NF = NF = â


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PDF MRF571 MRF572 MRFC572 MRF572
Silicon Bipolar Transistor 35 MICRO-X

Abstract: Silicon Bipolar Transistor MICRO-X GHZ micro-X Package GHZ micro-X ceramic Package micro-x silicon bipolar mmic 35 micro-X ceramic Package Self-Oscillating mixer micro-X 4 35 micro-x micro-x,
Text: : 0.070" Hermetic Stripline 35 Package: 0.085" Ceramic Micro-X LEAD NOTES: (unless otherwise


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ba1s

Abstract: GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X
Text: " Stripline, 0.085" Plastic Micro-X and 0.085" Ceramic Micro-X. PARAMETERS/CONDITIONS Id = 17 mA, ZIN = ZOUT = 50 unless stated G Small signal gain ( |S 21 2 | ): Ceramic µX f = 0.1 GHz Plastic µX , = 1.0 GHz dB 5.5 Vd Device Voltage (Pin 3) Ceramic µX Plastic µX Volts 4.5 , 35 Package: 0.085" Ceramic Micro-X LEAD NOTES: (unless otherwise specified) in 1


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PDF dBm01 ba1s GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X
GHZ micro-X Package

Abstract: low noise block down converter GHZ micro-X ceramic Package Ceramic Resonator GHz MMIC SOT 3 silicon Micro-X Ceramic frequency converter Silicon Bipolar Transistor 35 MICRO-X Silicon Bipolar Transistor MICRO-X 8511
Text: " Ceramic Micro-X LEAD NOTES: (unless otherwise specified) Silicon Bipolar Transistor 1 Base


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micro-x mhz ghz microwave

Abstract: ba 5888 MMIC Amplifier Micro-X GHZ micro-X Package
Text: , 0.085" Ceramic Micro-X, 0.070" Stripline, SOT143J and bare unencapsulated chips. PARAMETERS , Package: 0.085" Ceramic Micro-X LEAD NOTES: (unless otherwise specified) in 1. Dimensions are


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ic 4027

Abstract: 3019 npn transistor transistor 30 j 124 7498 ic Silicon Bipolar Transistor 35 MICRO-X transistor s parameters noise B12V105 ic 4027 information microwave transistor SOT-23J
Text: range of packages are offered including SOT-23, SOT143, plastic and ceramic 0.085" Micro-X, 0.070 , 0.0 (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35) FREQ , = Z S = 50.0 + J 0.0 5 mA Z L = 50.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic , (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. S11 , Z S = 50.0 + J 0.0 25 mA Z L = 50.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic


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PDF B12V105 B12V105 OT-23, OT143, unencaps143 ic 4027 3019 npn transistor transistor 30 j 124 7498 ic Silicon Bipolar Transistor 35 MICRO-X transistor s parameters noise ic 4027 information microwave transistor SOT-23J
BA11

Abstract: MMIC Amplifier Micro-X GHZ micro-X ceramic Package
Text: Micro-X, 0.085" Ceramic Micro-X and bare unencapsulated chips. PARAMETERS/CONDITIONS Id = 36 mA, ZIN , " Ceramic Micro-X LEAD NOTES: (unless otherwise specified) in 1. Dimensions are (m m ) 2


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ECG transistor replacement guide book free

Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Text: . In addition to the value, ceramic disk capacitors may be marked with an alphanumeric code signifying , oscil- Table 24.3 EIA Temperature Characteristic Codes for Ceramic Disc Capacitors Minimum , Polyester Capacitors Color Code for Ceramic Capacitors Yellow Green Blue Gray White Black Pink , Multiplier Number Multiply By NONE 10 100 1000 10,000 0 1 2 3 4 Ceramic Capacitors (E


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PDF UG-309 UG-201 UG-349 UG-1034 UG-146 UG-83 UG-318 UG-273 UG-255 ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
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