The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LOWNOISESPLITRAILNONISO-BOOST-REF Texas Instruments Low Noise Split Rail Non-Isolated Boost + - 12V Power Supply
ISOLOWNOISESPLITRAILGEN-REF Texas Instruments 5V Isolated, Low Noise Split Rail Generator (0.25A, 2.5W total)
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16
ISL28110FBZ-T13 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C

low noise x band hemt transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
low noise x band hemt transistor

Abstract: Low Noise HEMT TC2623 transistor BP 109 BMH204 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor
Text: TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X /Ku band Schottky barrier High Electron Mobility Transistor . This device is based on a 0.25µm , Super Low Noise HEMT TC2623 Electrical Characteristics Tamb = +25°C Symbol Idss Test , 12GHz Super Low Noise HEMT TC2623 Typical Scattering Parameters Tamb = +25°C "S" Parameters Vds , Low Noise HEMT TC2623 Typical Parameters Tamb = +25°C NF and Ga vs Frequency 0.8 25 20


Original
PDF TC2623 12GHz TC2623 70mils BMH204 12GHz DSTC26237003 low noise x band hemt transistor Low Noise HEMT transistor BP 109 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor
low noise x band hemt transistor

Abstract: Gan hemt transistor x band MGF4953A
Text: MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE tnGaAs HEMT (leadess Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron MoMty Transistor , > MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS (Ta=25°C,VDS=2V,ID , 0.65dB (Typ.) • High associate gw @ f= 12GHz Gs = 13 5dB (Typ > APPLICATION • C to K band low , NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Side 0,20+0.1 0.80 ±0.1 Bottom


OCR Scan
PDF MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGr49S4A May/2000 low noise x band hemt transistor Gan hemt transistor x band MGF4953A
LOW HEMT

Abstract: Hemt transistor
Text: ( Preliminary } Fig.1 2.30 MITSUBISHI SEMICONDUCTOR MGF4951A SUPER LOW NOISE InGaAs HEMT , NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4951A super-low-noise HEMT (High Electron Mobility Transistor ) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES * Low noise figure @ f= 12GHz NFmin. = , low noise amplifiers. QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDs = 2 V , Id=1 OmA


OCR Scan
PDF MGF4951A MGF4951A 12GHz 12GHz lD-10mA LOW HEMT Hemt transistor
low noise hemt

Abstract: low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
Text: EC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2623 is a X /Ku band Schottky barrier High Electron Mobility Transistor . This device is based on a 0.25µm , )1 69 33 03 09 12GHz Super Low Noise HEMT EC2623 Electrical Characteristics Tamb = +25°C , subject to change without notice 12GHz Super Low Noise HEMT EC2623 Typical Scattering Parameters , without notice 12GHz Super Low Noise HEMT EC2623 Typical Parameters Tamb = +25°C NF and Ga vs


Original
PDF EC2623 12GHz EC2623 BMH204 12GHz DSEC26237003 low noise hemt low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
2008 - pseudomorphic HEMT

Abstract: CF003-03 Hemt transistor
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise , -03 provides low noise figure and wide dynamic range up to 26 GHz. It is suitable for narrow and wide band , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 CF003 , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 CF003 , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003


Original
PDF 19-Jul-08 CF003-03 CF003-03 CF003-03-000X pseudomorphic HEMT Hemt transistor
GaAs FET HEMT Chips

Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet 5458 transistor a02 Transistor rf
Text: MITSUBISHI SEMICONDUCTOR MGFC4453A InGaAs HEMT DESCRIPTION The MGFC4453A low-noise HEMT (High Electron Mobility Transistor ) is designed for use in X to K band amplifiers. OUTLINE DRAWING Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.) High associated gain @ f=12GHz Gs = 13.0dB (TYP.) APPLICATION X to K band low noise amplifiers. RECOMMENDED BIAS CONDITIONS V d s = 2 V , I d = 1 0 itiA R efer to Bias Procedure s 69 si- X 40 X 7Ts 7I


OCR Scan
PDF MGFC4453A MGFC4453A 12GHz 25pcs GaAs FET HEMT Chips on 5295 transistor transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet 5458 transistor a02 Transistor rf
fet transistor a03

Abstract: MGFC4419
Text: MITSUBISHI SEMICONDUCTOR InGaAs HEMT MGFC4419G Unit:millimeters DESCRIPTION FEATURES The MGFC4419G low-noise HEMT (High Electron Mobility Transistor ) is designed for use in X to K band amplifiers. · Low noise figure NFmin. = 0.50dB (MAX.) · High associated gain Gs=12.0dB (MIN.) OUTLINE DRAWING Fig.1 @ £=12GHz @ f=12GHz APPLICATION X to K band low noise amplifiers. Vds , Associated gain NFmin. Minimum noise figure (Ta=25°C) Test conditions I g=-10hA Vgs=-2V,Vds=0V Vgs


OCR Scan
PDF MGFC4419G MGFC4419G 12GHz fet transistor a03 MGFC4419
2003 - low noise hemt transistor

Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
Text: MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless , permission by Mitsubishi Electric C to K band low noise amplifiers QUALITY GRADE GG RECOMMENDED , ) MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic , MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS f (GHz) 3.0 4.0 5.0 6.0


Original
PDF MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A ORD148 50-ohm low noise hemt transistor InGaAs HEMT mitsubishi MGF4951A MGF4952A
2008 - CF001-03

Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CF001 Mimix Broadband CFA0103-A CFS0103-SB
Text: wide band low noise and high gain amplifiers up to 40 GHz. The CF001-03 is available in chip form and , GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer , their obligation to be compliant with U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor April , accept their obligation to be compliant with U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor


Original
PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 CF001-03-000X CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CF001 Mimix Broadband CFA0103-A CFS0103-SB
FMCW Radar

Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode GaAs Gunn Diode "94 GHz" Gunn Diode
Text: in Si and GaAs materials. GaAs will dominate in applications which require a very low noise figure , components. The DIOM-LVM HEMT component in 1994. ( Low Voltage Mobile) variants are optimized for , Technology GaAs HEMT X X X X X X X X X X Source: Strategy Analytics 12/99 PA MMICs , FETs LMDS Modules Low Noise FETs Flip Chip Production packaging resources and strategy , and customized components in enhanced Si, GaAs and hetero materials (SiGe HBT, GaAs HEMT , GaAs HBT).


Original
PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode GaAs Gunn Diode "94 GHz" Gunn Diode
2011 - Not Available

Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in C to K band , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary , side view Unit: mm 会 Gate 解 Source 回 Drain < Low Noise GaAs HEMT > MGF4953A Leadless , DRAIN CURRENT ID (mA) 20 VGS (V) < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package


Original
PDF MGF4953A MGF4953A 12GHz 000pcs/reel
2011 - Not Available

Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in K band amplifiers , =25.2GHz Gs = 10.0dB (Typ.) APPLICATION K band low noise amplifiers MITSUBISHI Proprietary Not to be , noise figure Note: Gs and NFmin. are tested with sampling inspection. 1 V < Low Noise GaAs HEMT , VGS=-0.1V/STEP ID vs. VGS VGS=0V VDS=1.5V < Low Noise GaAs HEMT > MGF4941CL Micro-X type


Original
PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs
2011 - Micro-X marking "K"

Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v hemt low noise die GD-32 HEMT marking K HEMT marking G transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ.) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ.) Fig.1 APPLICATION K band low noise , . Publication Date : Apr., 2011 1 < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package


Original
PDF MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v hemt low noise die GD-32 HEMT marking K HEMT marking G transistor "micro-x" "marking" 3
2004 - Not Available

Abstract: No abstract text available
Text: Apr./2004 MITSUBISHI SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor ) is , > MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 0.30 +0.1 0.05 2.10 ±0.1 1.25 , Apr./2004 MITSUBISHI SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat , SEMICONDUTOR MGF4931AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S Parameters


Original
PDF MGF4931AM MGF4931AM 12GHz
2004 - mgf4953a

Abstract: mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT , without permission by Mitsubishi Electric C to K band low noise amplifiers QUALITY GRADE GG , LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Top Side RWUYW TWUXW , SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS Freq (GHz) 1 2 3 4 5 6 7


Original
PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A mgf4953a mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
HEMT 36 ghz transistor

Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is , )1 69 33 03 09 40GHz Super Low Noise HEMT EC2827 Electrical Characteristics (single cell , notice 40GHz Super Low Noise HEMT EC2827 Absolute Maximum Ratings (1) Tamb = +25°C Symbol , without notice 40GHz Super Low Noise HEMT EC2827 "S" Parameters Vds = 2V,Ids = 9mA (maximum , Low Noise HEMT EC2827 Typical results Tamb = +25°C Typical noise parameters at Vds = 2V, Ids =


Original
PDF EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
2015 - MG1007-42

Abstract: MG1020-M16 1004mp MG1052-30 MSC1075M
Text: GC9911 X GC9912 LOW 2 C GC9913 S GC9914 Ku-Ka GC9921 X GC9922 LOW-MED 2 C GC9923 S , Moderate Bandwidth, Low Noise VCOs for Moderate Bandwidth, Low Noise VCOs PART NUMBER TOTAL , GaAs GaAs Freq. Band Super Hyper Vb=12V P/N Series High "S" Linear Vb=22V P/N Low , to 500mW and pulsed designs to 10W High reliability, low phase noise , and low 1/f noise , noise , and low 1/f noise Transmitters and receivers, beacons, radars, radiometers, and instrumentation


Original
PDF MS4-009-13 MG1007-42 MG1020-M16 1004mp MG1052-30 MSC1075M
2011 - Not Available

Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in S to Ku band , =12GHz Gs = 13.0dB (Typ.) Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE , . 1 V < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package 2.10 ±0.1 1.30  , =2V) < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package S PARAMETERS (VDS=2V,ID=10mA,Ta=room


Original
PDF MGF4934CM MGF4934CM 12GHz MGF4934CM-75 15000pcs/reel
mgf4953a

Abstract: MGF4954A
Text: MITSUBISHI SEMICONDUTOR M G F4953A/MG F4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility , ) APPLICATION • C to K band low noise amplifiers QUALITY GRADE • GG RECOMMENDED BIAS CONDITIONS • VDs , M G F4953A/M G F4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Top , ) June/2000 MITSUBISHI SEMICONDUTOR M G F4953A/M G F4954A SUPER LOW NOISE InGaAs HEMT


OCR Scan
PDF F4953A/MG F4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A MGF4953A June/2000 MGF4954A
FET 748

Abstract: MGF4951A MGF4951 MGF4952A 4952A ta 1223
Text: MITSUBISHI SEMICONDUCTOR MGF4951A/4952A SUPER LOW NOISE InGaAs HEMT (Leadless , ) High associated gain @f=12GHz Gs = 12.0dB (TYP.) APPLICATION C to K band low noise amplifiers , MGF4951A/4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 TOP SIDE , FET> MGF4951A/4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS , /4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS (Ta=25°C,VDS=2V,ID


OCR Scan
PDF MGF4951A/4952A MGF495 12GHz MGF4951A MGF4952A 12GHz MGF4951A FET 748 MGF4951 MGF4952A 4952A ta 1223
2004 - InGaAs HEMT mitsubishi

Abstract: transistor P7d MGF4957A Fet P7d
Text: June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron , Not to be reproduced or disclosed without permission by Mitsubishi Electric C to K band low noise , ) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT , June/2004 MITSUBISHI SEMICONDUCTOR MGF4957A SUPER LOW NOISE InGaAs HEMT (Leadless


Original
PDF June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d
2004 - Not Available

Abstract: No abstract text available
Text: June/2004 MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT , .1 APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed , LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm 1 Gate 2 Source 3 Drain , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS f (GHz) 1.0 2.0 3.0 4.0 5.0 6.0


Original
PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A 12GHz
2011 - Not Available

Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in K band amplifiers , associated gain @ f=20GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers MITSUBISHI , -32) < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta , , ID (mA) 20 Associated Gain , Gs (dB) Noise Figure ,NF (dB) 2.0 < Low Noise GaAs HEMT


Original
PDF MGF4964BL MGF4964BL 20GHz 4000pcs
2006 - InGaAs HEMT mitsubishi

Abstract: 4pin transistor top 205 MGF4934AM GD-30
Text: Feb./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin , Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without , > MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 2.10 ±0.1 1.25 0.65 0.30 , ./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead , SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Requests Regarding


Original
PDF MGF4934AM MGF4934AM 12GHz InGaAs HEMT mitsubishi 4pin transistor top 205 GD-30
2006 - Not Available

Abstract: No abstract text available
Text: Dec./2006 MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4934AM super-low noise HEMT (High Electron Mobility , APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without permission by , SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL , MITSUBISHI SEMICONDUTOR MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S


Original
PDF MGF4934AM MGF4934AM 12GHz 3000pcs/reel
Supplyframe Tracking Pixel