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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1761MPS5-3#TRMPBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature: Military
LT1761IS5-2.0#TRMPBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature: Industrial
LT1761IS5-2.0#TRPBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature: Industrial
LT1761IS5-2.0#PBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature: Industrial
lt1761MPS5-1.8#PBF Linear Technology 100mA, Low Noise, LDO Micropower Regulators in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -55° to +125°C
LT1761ES5-1.8#TRPBF Linear Technology LT1761 - 100mA, Low Noise, LDO Micropower Regulators in TSOT-23; Package: SOT; Pins: 5; Temperature Range: -40°C to 85°C

low noise hemt transistor Datasheets Context Search

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low noise hemt

Abstract: low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
Text: EC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2623 is , )1 69 33 03 09 12GHz Super Low Noise HEMT EC2623 Electrical Characteristics Tamb = +25°C , subject to change without notice 12GHz Super Low Noise HEMT EC2623 Typical Scattering Parameters , without notice 12GHz Super Low Noise HEMT EC2623 Typical Parameters Tamb = +25°C NF and Ga vs , Low Noise HEMT EC2623 Chip Mechanical Data Drain area= 45*45 µm Gate area = 45*45 µm


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PDF EC2623 12GHz EC2623 BMH204 12GHz DSEC26237003 low noise hemt low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
low noise x band hemt transistor

Abstract: Low Noise HEMT TC2623 transistor BP 109 BMH204 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor
Text: TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is , Super Low Noise HEMT TC2623 Electrical Characteristics Tamb = +25°C Symbol Idss Test , 12GHz Super Low Noise HEMT TC2623 Typical Scattering Parameters Tamb = +25°C "S" Parameters Vds , Low Noise HEMT TC2623 Typical Parameters Tamb = +25°C NF and Ga vs Frequency 0.8 25 20 , Specifications subject to change without notice 12GHz Super Low Noise HEMT TC2623 BMH204 Package 0


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PDF TC2623 12GHz TC2623 70mils BMH204 12GHz DSTC26237003 low noise x band hemt transistor Low Noise HEMT transistor BP 109 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor
2003 - low noise hemt transistor

Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
Text: MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High , ) MITSUBISHI SEMICONDUTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic , MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS f (GHz) 3.0 4.0 5.0 6.0


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PDF MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A ORD148 50-ohm low noise hemt transistor InGaAs HEMT mitsubishi MGF4951A MGF4952A
2011 - Not Available

Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in K band amplifiers , noise figure Note: Gs and NFmin. are tested with sampling inspection. 1 V < Low Noise GaAs HEMT , VGS=-0.1V/STEP ID vs. VGS VGS=0V VDS=1.5V < Low Noise GaAs HEMT > MGF4941CL Micro-X type , contact our sales offices. < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package S


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PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs
2008 - pseudomorphic HEMT

Abstract: CF003-03 Hemt transistor
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise , -03 provides low noise figure and wide dynamic range up to 26 GHz. It is suitable for narrow and wide band , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 CF003 , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 CF003 , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003


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PDF 19-Jul-08 CF003-03 CF003-03 CF003-03-000X pseudomorphic HEMT Hemt transistor
2008 - Not Available

Abstract: No abstract text available
Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer , wide band low noise and high gain amplifiers up to 40 GHz. The CF001-03 is available in chip form and , accept their obligation to be compliant with U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor , Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Mimix Broadband, Inc., 10795 Rockley Rd


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PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 comm-000X
2011 - Not Available

Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in C to K band , side view Unit: mm 会 Gate 解 Source 回 Drain < Low Noise GaAs HEMT > MGF4953A Leadless , DRAIN CURRENT ID (mA) 20 VGS (V) < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package , sales offices. < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package Keep safety first in


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PDF MGF4953A MGF4953A 12GHz 000pcs/reel
HEMT 36 ghz transistor

Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is , )1 69 33 03 09 40GHz Super Low Noise HEMT EC2827 Electrical Characteristics (single cell , notice 40GHz Super Low Noise HEMT EC2827 Absolute Maximum Ratings (1) Tamb = +25°C Symbol , without notice 40GHz Super Low Noise HEMT EC2827 "S" Parameters Vds = 2V,Ids = 9mA (maximum , Low Noise HEMT EC2827 Typical results Tamb = +25°C Typical noise parameters at Vds = 2V, Ids =


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PDF EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
2008 - CF001-03

Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CF001 Mimix Broadband CFA0103-A CFS0103-SB
Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer , wide band low noise and high gain amplifiers up to 40 GHz. The CF001-03 is available in chip form and , their obligation to be compliant with U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor April , accept their obligation to be compliant with U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor


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PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 CF001-03-000X CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CF001 Mimix Broadband CFA0103-A CFS0103-SB
2008 - Not Available

Abstract: No abstract text available
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise , -03 provides low noise figure and wide dynamic range up to 26 GHz. It is suitable for narrow and wide band , U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003 , to be compliant with U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19 , accept their obligation to be compliant with U.S. Export Laws. GaAs Pseudomorphic HEMT Transistor


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PDF 19-Jul-08 CF003-03 CF003-03 for-000X
2004 - FHX35LP

Abstract: FHX35LG WG 924 FHX35
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG 150 , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


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PDF FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35
1998 - low noise hemt

Abstract: lg s12 WG 924 FHX35LG PT 4304 a transistor fujitsu hemt
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG 150 , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


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PDF FHX35LG 12GHz FHX35LG 2-18GHz FCSI0598M200 low noise hemt lg s12 WG 924 PT 4304 a transistor fujitsu hemt
Not Available

Abstract: No abstract text available
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB (Typ.)@f=4GHz • High , 3 Drain-Source Voltage (V) 2 4 FHC40LG Super Low Noise HEMT TYPICAL NOISE FIGURE , 4 6 8 1012 18 20 Frequency (GHz) 3 FHC40LG Super Low Noise HEMT S11 S22 +j50 , -179.7 173.6 166.4 158.8 0° FHC40LG Super Low Noise HEMT Case Style "LG" Metal-Ceramic , , TVRO, VSAT or other low noise applications. Eudyna stringent Quality Assurance Program assures the


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PDF FHC40LG FH40LG 2-12GHz
2004 - FHX13LG

Abstract: FHX13 FHX14LG
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Condition 13.0 - dB - 300 400 °C/W FHX13LG, FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gain (dB) NF & Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE , ° Rn/50 = 0.04 NFmin = 0.45dB FHX13LG, FHX14LG Super Low Noise HEMT S11 S22 +j50 S21 S12


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13
1998 - FHR02FH

Abstract: fujitsu hemt
Text: FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Edition 1.1 July 1999 1 FHR02FH Super Low Noise HEMT POWER DERATING CURVE Total Power , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 , 6 8 1012 18 20 Frequency (GHz) FHR02FH Super Low Noise HEMT S11 S22 +j50 S21 S12 , S-Parameters, click here 5 FHR02FH Super Low Noise HEMT Case Style "FH" Metal-Ceramic Hermetic


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt
2011 - Micro-X marking "K"

Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v hemt low noise die GD-32 HEMT marking K HEMT marking G transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in K , . Publication Date : Apr., 2011 1 < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package , 0 Gate to Source voltage, VGS(V) Publication Date : Apr., 2011 3 < Low Noise GaAs HEMT , Date : Apr., 2011 5 < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package PRELIMINARY


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PDF MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v hemt low noise die GD-32 HEMT marking K HEMT marking G transistor "micro-x" "marking" 3
2004 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B (Typ.)@f=12GHz • High , FHX35LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT NF , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10


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PDF FHX35LG 12GHz FHX35LG 2-18GHz the88
2000 - low noise hemt

Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG is a High Electron Mobility Transistor ( HEMT ) intended for general purpose, low noise and high gain , FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , Low Noise HEMT POWER DERATING CURVE 300 Total Power Dissipation (mW) 250 200 150 100 50 0 0 50 100 , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , Ambient Temperature (°K) Input Power (dBm) 3 FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE


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PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
fujitsu hemt

Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Text: other low noise applications. FHC40LG : Super Low Noise HEMT . Fujitsu's stringent Quality Assurance , ) 200 (0,1) 315 (1,2) qQ 500 (1,2) FUJITSU FHC40LG : Super Low Noise HEMT . POWER DERATING CURVE , : Super Low Noise HEMT . -j50 "90° S-PARAMETERS VDS = 2V, lDS = 10mA frequency s11 s21 s12 s22 , FEATURES • Low Noise Figure: 0.3dB (Typ.)@f=4GHz • High Associated Gain: 15.5dB (Typ , High Electron Mobility Transistor (SuperHEMT™) intended for general purpose, ultra-low noise and high


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PDF FH40LG 2-12GHz FHC40LG FCSI0598M200 fujitsu hemt fujitsu transistor HEMT fhc40lg 280AM low noise hemt
2004 - FHX04

Abstract: FHX04LG FHX05LG FHX06LG Eudyna Packaging
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , (dB) Total Power Dissipation (mW) 200 FHX04LG, 05LG, 06LG Super Low Noise HEMT TYPICAL , Low Noise HEMT S11 S22 +j50 S21 S12 +90° +j100 +j25 4 6 2 18 GHz 18 GHz , Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor ( HEMT


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PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04 FHX04LG FHX05LG Eudyna Packaging
2000 - fhc40lg

Abstract: 18GHZ low noise hemt FH40LG
Text: FHC40LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.3dB (Typ.)@f=4GHz · High Associated , Drain-Source Voltage (V) 2 4 FHC40LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 , (GHz) 3 FHC40LG Super Low Noise HEMT S11 S22 +j50 S21 S12 +90° +j100 +j25 4 , S-Parameters, click here 0° FHC40LG Super Low Noise HEMT Case Style "LG" Metal-Ceramic Hermetic , , TVRO, VSAT or other low noise applications. Eudyna stringent Quality Assurance Program assures the


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PDF FHC40LG FH40LG 2-12GHz fhc40lg 18GHZ low noise hemt
1998 - FHR02FH

Abstract: transistor hemt Low Noise HEMT
Text: FHR02FH Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=18GHz , Edition 1.1 July 1999 1 FHR02FH Super Low Noise HEMT POWER DERATING CURVE Total Power , ) NF & Gas vs. FREQUENCY FHR02FH Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 , 4 6 8 1012 18 20 Frequency (GHz) FHR02FH Super Low Noise HEMT S11 S22 +j50 S21 , FHR02FH Super Low Noise HEMT Case Style "FH" Metal-Ceramic Hermetic Package 2 Min. (0.078) 2 Min


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 transistor hemt Low Noise HEMT
1998 - FHX35LG

Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor ) ones suitable for use as the front end of an , Gate-Source Voltage (V) 2 FHX35X/002 FHX35LG/002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs , Layout FHX35X/002 3 FHX35X/002 FHX35LG/002 Low Noise HEMT Case Style "LG" Metal-Ceramic , , low gate capacitance and low leakage current; all important factors in achieving low noise


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PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die
2011 - Not Available

Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in S to Ku band , . 1 V < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package 2.10 ±0.1 1.30  , =2V) < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package S PARAMETERS (VDS=2V,ID=10mA,Ta=room , sales offices. < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package Keep safety first in


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PDF MGF4934CM MGF4934CM 12GHz MGF4934CM-75 15000pcs/reel
low noise x band hemt transistor

Abstract: Gan hemt transistor x band MGF4953A
Text: MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE tnGaAs HEMT (leadess Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron MoMty Transistor , > MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS (Ta=25°C,VDS=2V,ID , NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Side 0,20+0.1 0.80 ±0.1 Bottom , losses FEATURES • Low notse figure @f=12GHz MGF4953A ; NFmin. ■0 45dB (Typ ) MGr49S4A : Nrmin. -


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PDF MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGr49S4A May/2000 low noise x band hemt transistor Gan hemt transistor x band MGF4953A
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