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Part Manufacturer Description Datasheet Download Buy Part
LT6106CS5#TR Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: 0°C to 70°C
LT6106CS5#TRPBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: 0°C to 70°C
LT6106HS5#TRMPBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: -40°C to 125°C
LT6106CS5#PBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: 0°C to 70°C
LT6106HS5#TRPBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: -40°C to 125°C
LT6106HS5#PBF Linear Technology LT6106 - Low Cost, 36V High Side Current Sense Amplifier; Package: SOT; Pins: 5; Temperature Range: -40°C to 125°C

low cost BFR90 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - brf90

Abstract: BFR90 MRF555T MRF4427 2N6255 2N5179 2N5109 2N4427 transistor bfr96 BFR90 transistor
Text: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free , 200 8000 0.45 10 100 Low Cost RF Plastic Package Options Macro T 15 30 70 400 RF , · Low Noise Figure ­ NF = 2.4 dB (typ) @ f = 0.5 GHz · High Power Gain ­ Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low , or contact our factory direct. Rev A 9/2005 BFR90 BRF90G ELECTRICAL SPECIFICATIONS (Tcase = 25


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PDF BFR90 BRF90G brf90 BFR90 MRF555T MRF4427 2N6255 2N5179 2N5109 2N4427 transistor bfr96 BFR90 transistor
2004 - MRF517

Abstract: VK200 mrf559 mrf559 vk200 nf c4 npn MRF553 MRF4427 2N6255 2N5179 BFR90 amplifier RF Transistor Selection
Text: contact our factory direct. 20 400 30 400 TO-72 1 Macro X 3.5 11.4 1000 Low Cost RF , MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Gpe = 10 dB (typ) @ 60 mA, 300 MHz · 3 GHz Current-Gain Bandwidth Product , TO-39 DESCRIPTION: The MRF517 is a silicon NPN transistor , designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-driver, driver, and output stages. ABSOLUTE MAXIMUM


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PDF MRF517 To-39 MRF517 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 VK200 mrf559 mrf559 vk200 nf c4 npn MRF553 MRF4427 2N6255 2N5179 BFR90 amplifier RF Transistor Selection
2004 - RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 transistor 2n5109 MRF553 MRF559 MRF607 2N4427
Text: Guide Low Cost RF Plastic Package Options 1 1 1 8 2 1 4 3 3 Power Macro SO , 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · 1.2 GHz Current-Gain Bandwidth Product @ 50mA · 1. Emitter 2. Base 3 , silicon NPN transistor , designed for VHF and UHF equipment. Applications include amplifier; pre-driver , 50 10 14 15 5000 Macro BFR90 NPN 500 2.4 2 10 15 18 5000


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PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 transistor 2n5109 MRF553 MRF559 MRF607 2N4427
2009 - RF 2N3866

Abstract: 2N3866 2N3866A Transistor 2N3866 MRF607 MRF553 MRF4427 2N6255 2N5179 2N4427
Text: Low Cost RF Plastic Package Options Macro T Macro X Power SO-8 Microsemi reserves the , 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor , designed for VHF and UHF , Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide 1300 3.5 11.4 1000


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PDF 2N3866 2N3866A To-39 28Vdc Volta15 RF 2N3866 2N3866A Transistor 2N3866 MRF607 MRF553 MRF4427 2N6255 2N5179 2N4427
2003 - 2N3866A

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N6255 data 2n3866 MRF553 MRF607
Text: ) Selection Low Cost RF Plastic Package Options 1 1 8 1 2 2 3 5 1 4 3 2N3866 , 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor , designed for VHF and UHF , 2 50 10 14 15 5000 Macro BFR90 NPN 500 2.4 2 10 15 18


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PDF 2N3866 2N3866A To-39 28Vdc MRF555 2N4427 MRF4427, 2N3866A RF NPN POWER TRANSISTOR 1000 WATT Transistor 2N3866 for transistor bfr96 RF 2N3866 2N6255 data 2n3866 MRF553 MRF607
2004 - BFR90

Abstract: No abstract text available
Text: BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · High Current-Gain ­ Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure ­ NF = 2.4 dB (typ) @ f = 0.5 GHz High , WWW.ADVANCEDPOWER.COM or contact our factory direct. BFR90 RF Low Power PA, LNA, and General Purpose Discrete , Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 2 3 4 3 , for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast


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PDF BFR90 BFR90
BFR90

Abstract: No abstract text available
Text: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free , 15 30 16 200 Low Cost RFPlastic Package O ptions Macro T 15 100 2 MACRO X RF , mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax , high-gain, low noise, small-signal amplifiers. Also used in N: applications requiring fast switching times , website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 BFR90 BRF90G ELECTRICAL


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PDF BFR90 BRF90G BFR90
BFR90 transistor

Abstract: BFR90 application "Small Signal Amplifiers" BFR90 s-tech BFR90 MOTOROLA BFR90D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Text: MOTOROLA Order this document by BFR90 /D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR90 Designed primarily for use in high­gain, low­noise , Bandwidth Product - fT = 5.0 GHz (Typ) @ IC = 14 mA · Low Noise Figure - NF = 2.4 dB (Typ) @ f = 0.5 GHz NF = 3.0 dB (Typ) @ f = 1.0 GHz fT = 5.0 GHz @ 14 mA HIGH­FREQUENCY TRANSISTOR NPN SILICON , , collector pad area 110 X 700 mils. REV 1 ©MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 BFR90 1


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PDF BFR90/D BFR90 BFR90/D* DEVICEBFR90/D BFR90 transistor BFR90 application "Small Signal Amplifiers" BFR90 s-tech BFR90 MOTOROLA BFR90D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
2001 - BFR90

Abstract: BFR90 application BFR90 amplifier
Text: BFR90 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device , antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 13623 1 BFR90 Marking: BFR90 Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = , 85028 Rev. 3, 20-Jan-99 Symbol RthJA Value 300 Unit K/W www.vishay.com 1 (9) BFR90 , -Jan-99 BFR90 Vishay Semiconductors Common Emitter S­Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise


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PDF BFR90 BFR90 D-74025 20-Jan-99 BFR90 application BFR90 amplifier
Bfr90

Abstract: BFR90 application
Text: ViSHAY _ _ BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features · · · High power gain Low noise figure High transition frequency BFR90 Marking: BFR90 Plastic case (TO 50) 1 = Collector, 2 = , Number 85028 Rev. 3, 20-Jan-99 www.vishay.de · FaxBack+1-408-970-5600 1 (9) BFR90


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PDF BFR90 BFR90 20-Jan-99 BFR90 application
2003 - 2N4427

Abstract: 1300 NPN MRF555 MRF559 MRF607 MRF553 2N5179 2N6255 MRF4427 RF NPN POWER TRANSISTOR 1000 WATT
Text: ) Selection Guide 1 Macro X 200 200 8000 Low Cost RF Plastic Package Options Macro T 15 , 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base , ) @ 175 MHz DESCRIPTION: Silicon NPN transistor , designed for VHF and UHF equipment. Applications , , R1, R2 2 50 MRF581A NPN 500 2 50 10 14 15 BFR90 NPN 500 2.4


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PDF 2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF555 MRF559 MRF607 MRF553 2N5179 2N6255 MRF4427 RF NPN POWER TRANSISTOR 1000 WATT
BFR90 transistor

Abstract: BFR90 BFR90 application marking A3 amplifier 449 marking amplifier j02
Text: BFR90 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for , . Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 13623 1 BFR90 Marking: BFR90 Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute , TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 1 (8) BFR90 Electrical DC Characteristics Tj = 25 , dBm TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 BFR90 + Common Emitter S-Parameters Z0


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PDF BFR90 BFR90 D-74025 31-Oct-97 BFR90 transistor BFR90 application marking A3 amplifier 449 marking amplifier j02
BFR90

Abstract: BFR90 transistor transistor BFR90
Text: BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device , antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 13623 1 BFR90 Marking: BFR90 Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = , +1-408-970-5600 1 (9) BFR90 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise , pF pF Document Number 85028 Rev. 3, 20-Jan-99 BFR90 Vishay Telefunken Common Emitter


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PDF BFR90 BFR90 D-74025 20-Jan-99 BFR90 transistor transistor BFR90
2N5109 motorola

Abstract: BFY90 MOTOROLA MRF965 2N5583 bfr91 motorola MOTOROLA 2N5179 MRF586 macro-X ceramic 2N3866A 2n4427 MOTOROLA
Text: 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor /package , , BFY90 10 2N4957. 2N4958, 2N4959, PNP 12 2N6603, BFR90 , MRF901, MRF904 13 2N6604, BFR91, MRF911 , 4500* 3.0/500 -50 -72 + 50 TO-39 BFR90 10/14 5000* 2.47500 317A-01 BFR91 5/35 5000* 1.97500


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PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA MRF965 2N5583 bfr91 motorola MOTOROLA 2N5179 MRF586 macro-X ceramic 2N3866A 2n4427 MOTOROLA
uhf amplifier design BFR90

Abstract: 2N3866 MOTOROLA 2n5160 MRF531 MRF306 2n5583 MOTOROLA 2N5179 2n5179 MRF905 BFR91
Text: MRF306* 60 8.0 28 278-06 "Controlled "Q" transistor . See EB-19. UHF and Microwave Oscillators The , BFR90 BFR91 BFR96 NPN 4.5 BFR90 MM4049 BFR91 BFR96 BFR96 PNP NPN 4.0 MM4049 BFR90 MM4049 BFR91 PNP NPN 3.5 MM4049 BFR90 MM4049 BFR90 MM4049 BFR91 BFR91 PNP NPN 2.5 MFR901 MRF901 2N5835 2N5835 , 39 MRF519 20/50-80 2200 8.0/300 -50 -68 -57 -50 T0391 BFR90 10/14 5000* 2.4*/500 302 BFR91 , CATV distribution equipment but are applicable wherever broadband (HF/VHF) low distortion, low-noise


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PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 uhf amplifier design BFR90 2N3866 MOTOROLA 2n5160 MRF531 MRF306 2n5583 MOTOROLA 2N5179 2n5179 MRF905 BFR91
1997 - BFR90 application

Abstract: BFR90 transistor BFR90 BFR90 amplifier
Text: BFR90 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90 Marking: BFR90 Plastic case (TO 50) 1= Collector; 2= Emitter; 3 , Cu TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (6) BFR90 Electrical DC Characteristics , dBm TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 BFR90 + Common Emitter S-Parameters Z0


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PDF BFR90 BFR90 D-74025 17-Apr-96 BFR90 application BFR90 transistor BFR90 amplifier
lm 538 n ic

Abstract: BFR90
Text: TEMIC S e m i c o n d u c t o r s BFR90 Silicon NPN Planar RF Transistor Electrostatic , specially for wide band antenna amplifier. Features · · · High power gain Low noise figure High transition frequency BFR90 Marking: BFR90 Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base , Semiconductors Rev. A3, 31-Oct-97 1(8) BFR90 Electrical DC Characteristics Tj = 25°C, unless otherwise , ) TELEFUNKEN Semiconductors Rev. A3, 31-Oct-97 Temic S e m i c o n d u c t o r s BFR90 Common


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PDF BFR90 BFR90 D-74025 31-Oct-97 lm 538 n ic
2008 - BFR90

Abstract: BFR90 application s2190
Text: Not for new design, this product will be obsoleted soon BFR90 Vishay Semiconductors Silicon NPN Planar RF Transistor 3 B Features · · · · · High power gain Low noise figure e3 High , -50 Plastic case Weight: approx. 111 mg Marking: BFR90 Pinning: 1 = Collector, 2 = Emitter, 3 = Base , 1 BFR90 Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise , Number 85028 Rev. 1.5, 08-Sep-08 BFR90 Vishay Semiconductors Common Emitter S-Parameters Z0 = 50


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PDF BFR90 2002/95/EC 2002/96/EC BFR90 18-Jul-08 BFR90 application s2190
2N5109 motorola

Abstract: MRF536 BFR90 application 244A-01 MRF586 MRF931 MRF961 2N5943 mrf517 MRF525
Text: 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor /package , , BFY90 10 2N4957. 2N4958, 2N4959, PNP 12 2N6603, BFR90 , MRF901, MRF904 13 2N6604, BFR91, MRF911 , 4500* 3.0/500 -50 -72 + 50 TO-39 BFR90 10/14 5000* 2.47500 317A-01 BFR91 5/35 5000* 1.97500


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PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application 244A-01 MRF586 MRF931 MRF961 2N5943 mrf517 MRF525
2001 - BFR90 transistor

Abstract: BFR90 BFR90 application BFR90 amplifier
Text: BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device , antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 13623 1 BFR90 Marking: BFR90 Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = , 85028 Rev. 3, 20-Jan-99 Symbol RthJA Value 300 Unit K/W www.vishay.com 1 (9) BFR90 , -Jan-99 BFR90 Vishay Telefunken Common Emitter S­Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise


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PDF BFR90 BFR90 D-74025 20-Jan-99 BFR90 transistor BFR90 application BFR90 amplifier
BFR90

Abstract: transistor BFR90 BFR90 transistor
Text: BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device , antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 13623 1 BFR90 Marking: BFR90 Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = , 85028 Rev. 3, 20-Jan-99 Symbol RthJA Value 300 Unit K/W www.vishay.com 1 (9) BFR90 , , 20-Jan-99 BFR90 Vishay Telefunken Common Emitter S­Parameters Z0 = 50 W, Tamb = 25_C, unless


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PDF BFR90 BFR90 D-74025 20-Jan-99 transistor BFR90 BFR90 transistor
2005 - 1J53-0

Abstract: marking s11 BFR90 amplifier BFR90
Text: BFR90 Vishay Semiconductors Silicon NPN Planar RF Transistor Features · · · · · High power gain Low noise figure e3 High transition frequency Lead (Pb)-free component Component in accordance to , precautions for handling. Mechanical Data Case: TO-50 Plastic case Weight: approx. 111 mg Marking: BFR90 , 85028 Rev. 1.4, 29-Apr-05 www.vishay.com 1 BFR90 Vishay Semiconductors Electrical DC , www.vishay.com 2 Document Number 85028 Rev. 1.4, 29-Apr-05 BFR90 Vishay Semiconductors Common Emitter


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PDF BFR90 2002/95/EC 2002/96/EC BFR90 D-74025 29-Apr-05 1J53-0 marking s11 BFR90 amplifier
2005 - BFR90

Abstract: BFR90 transistor s2190
Text: BFR90 Vishay Semiconductors Silicon NPN Planar RF Transistor 3 Features · · · · · High power gain Low noise figure e3 High transition frequency Lead (Pb)-free component Component , : approx. 111 mg Marking: BFR90 Pinning: 1 = Collector, 2 = Emitter, 3 = Base Absolute Maximum Ratings , plated with 35 m Cu Document Number 85028 Rev. 1.4, 29-Apr-05 www.vishay.com 1 BFR90 Vishay , Rev. 1.4, 29-Apr-05 BFR90 Vishay Semiconductors Common Emitter S-Parameters Z0 = 50 , Tamb =


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PDF BFR90 2002/95/EC 2002/96/EC 08-Apr-05 BFR90 BFR90 transistor s2190
case 317-01

Abstract: MRF2369 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
Text: 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor /package , , BFY90 10 2N4957. 2N4958, 2N4959, PNP 12 2N6603, BFR90 , MRF901, MRF904 13 2N6604, BFR91, MRF911 , SELECTION GUIDE 3-66 RF SMALL-SIGNAL TRANSISTORS (continued) Small-Signal Amplifier Transistor Selection


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PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 case 317-01 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
2003 - MRF559

Abstract: No abstract text available
Text: ( Low Power PA / General Purpose) Selection RF (LNA / General Purpose) Selection Guide Low Cost RF , MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro , contact our factory direct. MRF559 RF Low Power PA, LNA, and General Purpose Discrete Selector , 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951


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PDF MRF559 MRF559 3-20-0erves
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