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lna 2.5 GHZ s parameter ads design Datasheets Context Search

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2012 - NF041

Abstract:
Text: flexibility. 2. Requirements and design of the 2.3-2.7GHz GHz LNA The BFU730 2.3-2.7GHz LNA EVB simplifies , dB 3. Design The 2.3_2.7 GHz LNA consists of one stage grounded emitter BFU730F amplifier. For , been conducted using Agilent’ s Advanced Design System ( ADS ). The 2D EM Momentum tool has been used , Simulation circuit Fig 1. ADS simulation circuit for 2.3-2.7 GHz LNA AN11006 Application note , 2.3_2.7GHz LNA 3.2 BFU730F 2.3-2.7 GHz LNA - ADS Gain and match simulation results Fig 2. ADS Gain


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PDF AN11006 BFU730F BFU730F, BFU730F OM7690/BFU730F NF041
2011 - BFU790

Abstract:
Text: . Requirements and design of the 2.3-2.7GHz GHz LNA The BFU730 2.3-2.7GHz LNA EVB simplifies the evaluation of , . Design The 2.3_2.7 GHz LNA consists of one stage grounded emitter BFU730F amplifier. For this amplifier , Fig 1. ADS simulation circuit for 2.3-2.7 GHz LNA AN11006 Application note All information , 2.3-2.7 GHz LNA - ADS Gain and match simulation results Fig 2. ADS Gain and match simulation results , 26 AN11006 NXP Semiconductors 2.3_2.7GHz LNA 3.3 BFU730F 2.3-2.7 GHz LNA - ADS NF


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PDF AN11006 BFU730F BFU730F, BFU730F BFU790 lna 2.5 GHZ s parameter ads design BFU730 bfu710 BFU760 MurataGRM1555 Miteq BFU760F BFU790 LNA BFU790F
2011 - BFU790

Abstract:
Text: flexibility. 2. Requirements and design of the 5-6 GHz WLAN LNA The circuit shown in this application note , V mA dB dB dB dB 3. Design The 5-6 GHz LNA consists of one stage BFU730F , GHz LNA 3.1 BFU730F 5-6 GHz-ADS Simulation circuit Fig 1. ADS simulation circuit for 5-6 GHz , AN11007 NXP Semiconductors 5-6 GHz LNA 3.2 BFU730F 5-6 GHz - ADS Gain and match simulation results Fig 2. ADS Gain and match simulation results for 5-6 GHz WLAN LNA AN11007 Application


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PDF AN11007 BFU730F BFU730F, BFU730F BFU790 BFU710 lna 2.5 GHZ s parameter ads design BFU760 agilent ads AN11007 BFU790F BFU710F LQP15
2012 - Not Available

Abstract:
Text: design of the 5-6 GHz WLAN LNA The circuit shown in this application note is intended to demonstrate the , dB dB dB dB 3. Design The 5-6 GHz LNA consists of one stage BFU730F amplifier. For this , conducted using Agilent’ s Advanced Design System ( ADS ). The 2D EM Momentum tool has been used to co , GHz LNA 3.1 BFU730F 5-6 GHz-ADS Simulation circuit Fig 1. ADS simulation circuit for 5-6 GHz , AN11007 NXP Semiconductors 5-6 GHz LNA 3.2 BFU730F 5-6 GHz - ADS Gain and match simulation


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PDF AN11007 BFU730F BFU730F, BFU730F OM7691/BFU730F
2005 - AVX0402YG104ZAT2A

Abstract:
Text: Advanced Design System ( ADS ) using the published S and Noise parameters from the Avago Technologies Web , -1218 Demo Board S Parameter Analysis showing comparison of the demo board performance vs ADS predicted , de-Qing range between a few ohms and 50 to 100 ohms. The LNA design presented in this application uses a , the LNA current consumption. Design Tradeoffs Designing a single stage low noise amplifier , successful LNA design . Circuit Topology Since our primary objective with this design is to achieve a


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PDF VMMK-1218 AV02-1519EN AVX0402YG104ZAT2A W140 MCR01J510E lna 2.5 GHZ s parameter ads design GAP14 Gap12 MCR01J100 MCR01J100E w250 package 1218
2015 - toshiba car audio catalog 2015

Abstract:
Text: (500 W) at 28 V supply voltage. This design covers the W-CDMA standard for band one (2.11 - 2.17 GHz , RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High , experts to help you solve your design challenges, so you can create a clear competitive advantage. 50 , technology and application solutions 4 NXP Semiconductors RF Manual 19th edition What’ s new? The , . More design support We’ve expanded the section on design support, adding the most recent tools


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2000 - BB 509 varicap diode

Abstract:
Text: 4 Design support 77 4.1 Knowing NXP’ s RF portfolio , NF By integrating a bypass LNA , an analog VGA, and second LNA in one design , these SiGe:C BiCMOS , power consumption, so it reduces OPEX and CO2 emissions. All of NXP’ s 1 GHz solutions are designed , UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF , designs NXP's RF Manual is one of the most important reference tools on the market for today’ s RF


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2005 - AL5100

Abstract:
Text: right after it. As a result, this architecture reduces the number of LNA devices and the design , needed at the LNA output. In order to keep the K factor greater than 1 across 20 GHz , the shunt , Performance for MGA-21108 with Id = 18 mA Parameter and Test Condition Units f = 2 GHz F = 3.5 GHz , Circuit Simulation Using Advance Design System ( ADS ) Simulator S2P SNP1 Tee2 Tee3 1 TL3 Term , L_StabCircle1 L_StabCircle1=l_stab_circle( S ,51) S_Param SP1 Start=50 MHz Stop=20 GHz Step=50 MHz MSUB


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PDF 11a/b/g MGA-21108 11b/g) ATF-551M4 AL5000 AL5100/AL5300) AV02-2113EN AL5100 Alereon AL5100 murata diplexer alereon lna 2.5 GHZ s parameter ads design START50 ATF-34143 LQP15
2002 - ATF-54143 application notes

Abstract:
Text: PIN or FET devices. The LNA described in this paper is for use in applications covering 1.7 GHz , design goals were thus chosen as shown in Table 1. Parameter at 2000 MHz > 21 dBm Output P , Agilent Technologies' advanced design system ( ADS ). The usual side effect of excessive source , ADS . This allows the designer to easily duplicate the amplifier design . The model for the hybrid , " for the base station. This paper describes the design of the balanced low noise amplifier within


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PDF ATF-54143 5988-5688EN ATF-54143 application notes ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid ATF54143 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
2005 - VMMK-1225

Abstract:
Text: out-of-band · P1dB and IP3 This LNA was optimized using Agilent Technologies Advanced Design System ( ADS , at 10 GHz . Figure 4 shows an S Parameter analysis of the VMMK-1225 amplifier. The plots show a , 6 8 10 12 14 16 18 20 freq, GHz Figure 4. VMMK-1225 Demo Board S Parameter Analysis , linear simulator will provide the best overall first step in any successful LNA design . Since our , LNA gain requirements are generally at least 20 dB, a two stage amplifier design will most likely be


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PDF VMMK-1225 VMMK-1225 VMMK-1225. TL105 TL104 AV02-1511EN lna 2.5 GHZ s parameter ads design TL103 application note AVX0402YG104ZAT2A RK73B1ETTP332J w250 TL39 Gap12 W3 220 Mil C-13924B
2006 - circuit diagram of hearing aid using transistors

Abstract:
Text: ) frequencies for cellular standards around 2 GHz . The design goals were thus chosen as shown in Table 1. Table 1. Design Goals Parameter at 2000 MHz Value Gain 15 - 16 dB Noise Figure, dB < 1 , design each LNA Biasing Options and Source Grounding for optimum noise figure performance, without , 1.0 1.5 2.0 FREQUENCY ( GHz ) 2.5 3.0 Conclusions A balanced low noise amplifier design , Figure 15. Input and Output Return Loss vs. Frequency Parameter 1.7 ­ 2.2 GHz References [1


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PDF ATF-54143 MTT-28, ATF54143 5988-5688EN circuit diagram of hearing aid using transistors ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid LL1608-FS4N7S JP503 atf54143 pHEMT
2009 - 4G base station power amplifier

Abstract:
Text: -360LF LNA maintains a very low NF up to 2.5 GHz and an excellent 3rd Order Output Intercept Point (OIP3). , satellite radios. LNA Topology and Technology Design Requirements LNA is designed specifically for , design trade-offs. Output Return Loss (ORL) is given as the only parameter that has a secondary , provide the most flexibility and, therefore, optimum design trade offs. The critical LNA design , . Design For Stability Stability is one of the most important requirements to consider for an LNA


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PDF 01087A 4G base station power amplifier lna 2.5 GHZ s parameter ads design FR4 dielectric constant 4.6 matching with smith chart common base amplifier circuit designing GaAs 0.15 pHEMT Simulation of 3 phase common mode choke VT-47
2014 - Not Available

Abstract:
Text: Semiconductors Example LNA design using BFU550W 5.6 Overall LNA simulation ADS template used: Fig 9 , AN11426 BFU550W ISM 866 MHz LNA design Rev. 1 — 24 January 2014 Application note Document , This document describes an ISM Frequency LNA design on BFU5xxW Starter kit Ordering info BFU5xxW , ://www.nxp.com AN11426 NXP Semiconductors Example LNA design using BFU550W Revision history Rev , NXP Semiconductors Example LNA design using BFU550W 1. Abstract In this application note an ISM


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PDF AN11426 BFU550W BFU520, BFU530, BFU550 433MHz 866MHz OM7960, BFU550W
2014 - Not Available

Abstract:
Text: Semiconductors Example LNA design using BFU550A 5.6 Overall LNA simulation ADS template used: Fig 9 , AN11381 BFU550A ISM 433 MHz LNA design Rev. 1 — 21 January 2014 Application note Document , This document describes an ISM Frequency LNA design on BFU5xxA Starter kit Ordering info BFU5xxA , ://www.nxp.com AN11381 NXP Semiconductors Example LNA design using BFU550A Revision history Rev , NXP Semiconductors Example LNA design using BFU550A 1. Abstract In this application note an ISM


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PDF AN11381 BFU550A BFU520, BFU530, BFU550 433MHz 866MHz OM7961, BFU550A
2007 - atf 36163 Low Noise Amplifier

Abstract:
Text: . LNA Design The 1X artwork for the generic demo board is shown in Figure 1. The generic demo board , response shown in Figure 4 is for a 2 GHz PHEMT LNA using minimal source inductance. As a result, the , FREQUENCY ( GHz ) 16 -20 18 Figure 11. Avago ADS Simulation showing S21. 4 6 8 10 12 14 , 2 0.2 1 0 1.6 1.8 2.0 2.2 FREQUENCY ( GHz ) 2.4 Figure 13. Avago ADS , with the published S and Noise parameters, Avago ADS predicts comparable performance to that measured


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PDF ATF-38143 ATF-38143 SC-70 OT-343) ATF38143 5968-9905E atf 36163 Low Noise Amplifier ku band lna microstripline FR4 LL1608-F2N7S ATF-36163 ATF pHEMT SOT343 lna
2014 - Not Available

Abstract:
Text: Semiconductors Example LNA design using BFU550A 5.6 Overall LNA simulation ADS template used: Fig 9 , AN11382 BFU550A ISM 866 MHz LNA design Rev. 1 — 21 January 2014 Application note Document , This document describes an ISM Frequency LNA design on BFU5xxA Starter kit Ordering info BFU5xxA , ://www.nxp.com AN11382 NXP Semiconductors Example LNA design using BFU550A Revision history Rev , NXP Semiconductors Example LNA design using BFU550A 1. Abstract In this application note an ISM


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PDF AN11382 BFU550A BFU520, BFU530, BFU550 433MHz 866MHz OM7961, BFU550A
2000 - agilent ads

Abstract:
Text: smaller device would be. LNA Design The 1X artwork for the generic demo board is shown in Figure 1 , stability. A poten- The gain response shown in Figure 4 is for a 2 GHz PHEMT LNA using minimal source , FREQUENCY ( GHz ) 16 0 1.6 18 1.8 2.0 2.2 FREQUENCY ( GHz ) 2.4 Figure 13. Agilent ADS , gain ripple. It has also been shown that with the published S and Noise parameters, Agilent ADS , noise PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz frequency


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PDF ATF-38143 ATF-38143 SC-70 OT343) agilent ads simulation ads atf 36163 Low Noise Amplifier ATF-36163 dual polarity power supply ku band lna LL1608-F2N7S
2003 - agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

Abstract:
Text: 10 GHz but others do not. Having S parameter data to 10 GHz and beyond is beneficial as it is , -551M4 design provides similar performance with a nominal 1.5 dB noise figure. LNA Demo Board The generic , -551M4 in two low noise amplifier designs optimized for the 5 to 6 GHz frequency range. The first design has been optimized for the 5.725 to 5.825 GHz frequency range while the second design has been , corresponding IIP3 is a nominal +15.5 dBm. 5.125 - 5.325 GHz ATF-551M4 Amplifier Design There are several


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PDF ATF-551M4 ATF551M4 ATF-551M4 5988-8609EN agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor s2p lna 2.5 GHZ s parameter ads design TL39 agilent pHEMT transistor Phycomp TL34 microstripline BCV62
1999 - 1 to 3 GHz bandpass filter wide band

Abstract:
Text: sensitive to source inductance as a smaller device would be. LNA Design The 1X artwork for the generic demo , variations in the device. The gain response shown in Figure 4 is for a 2 GHz PHEMT LNA using minimal source , especially out-of-band. Figures 12,13,14,15 show the results of the ADS simulation using the published S and , commercial applications in the VHF through 6 GHz frequency range. The ATF-38143 has 2 GHz performance , plastic package. The ATF-38143 is described in a low noise amplifier designed specifically for the 1.9 GHz


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PDF ATF-38143 38143c SC-70 OT343) 1 to 3 GHz bandpass filter wide band
2014 - Not Available

Abstract:
Text: Semiconductors Example LNA design using BFU550W 5.6 Overall LNA simulation ADS template used: Fig 9 , AN11425 BFU550W ISM 433 MHz LNA design Rev. 1 — 24 January 2014 Application note Document , This document describes an ISM Frequency LNA design on BFU5xxW Starter kit Ordering info BFU5xxW , ://www.nxp.com AN11425 NXP Semiconductors Example LNA design using BFU550W Revision history Rev , NXP Semiconductors Example LNA design using BFU550W 1. Abstract In this application note an ISM


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PDF AN11425 BFU550W BFU520, BFU530, BFU550 433MHz 866MHz OM7960, BFU550W
2013 - Not Available

Abstract:
Text: Noise Figure Figure 7. Setup Design Kit on Ads Main Window dBm Parameter @ 1.9 GHz Supply , WHITE PAPER Accurate System Level Design with Low Noise Amplifier’ s BlackBox Models By Eric , small/large performance. They may also evaluate the advanced design system ( ADS ) project provided with , WHITE PAPER • ACCURATE SYSTEM LEVEL DESIGN WITH LOW NOISE AMPLIFIER’ S BLACKBOX MODELS Simulation , Change Without Notice. WHITE PAPER • ACCURATE SYSTEM LEVEL DESIGN WITH LOW NOISE AMPLIFIER’ S


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2007 - TL381

Abstract:
Text: do not. Having S parameter data to 10 GHz and beyond is beneficial as it is important to analyze , STAB_MEAS( S ) Figure 1. ADS Schematic for the ATF-551M4 Input Circuit for 5.725 to 5.825 GHz 8 MSTEP , 6 GHz frequency range. The first design has been optimized for the 5.725 to 5.825 GHz frequency range while the second design has been broad-banded to cover the entire 5 to 6 GHz frequency range with , nominal +15.5 dBm. 5.125 - 5.325 GHz ATF-551M4 Amplifier Design There are several good design


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PDF ATF-551M4 ATF-551M4 5988-8609EN TL381 2n7040 Phycomp microstripline lna 2.5 GHZ s parameter ads design f551m42o transistor s2p phemt .s2p RF TRANSISTOR 1.5 GHZ dual gate
2003 - TRANSISTOR W25

Abstract:
Text: data to 10 GHz but others do not. Having S parameter data to 10 GHz and beyond is beneficial as it is , 5.125 to 5.325 GHz frequency range while the second design has been optimized for the 5.725 to 5.825 , capacitor manufacturers supply S parameters for each compo- 6 5.5 FREQUENCY ( GHz ) RETURN LOSS , results, the losses predicted by the chip capacitor S parameter data may be too high. The simulation , factor versus frequency shows K greater than 1 through 12 GHz , indicating a stable amplifier design


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PDF ATF-541M4 ATF-551M4, ATF-54143 SC-70 ATF-541M4) 5988-9004EN TRANSISTOR W25 TL39 TL42 TL34 so 54 t Phycomp l01 10800 BCV62 ATF-551M4
2006 - f541m43b

Abstract:
Text: first ATF-541M4 design has been optimized for the 5.125 to 5.325 GHz frequency range while the second design has been optimized for the 5.725 to 5.825 GHz frequency range. Both amplifier designs are , Signal Analyzer). The maximum allowed EVM at the 54 Mbit/ s (64QAM) rate is 5.6%. At 5.8 GHz the ATF , . 5.725­5.825 GHz Amplifier Output Return Loss vs. Frequency. ADS Computer Simulation The ADS simulated , frequency over which they supply data. Phycomp supplies data to 10 GHz but others do not. Having S


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PDF ATF-541M4 ATF-541M4 5988-9004EN f541m43b 2N2040 transistor s2p transistor D210 ATF-54143 ATF541M4 BCV62 WL30 depletion mode PHEMT .s2p diode W240
2006 - microstripline FR4

Abstract:
Text: the design of any LNA is the method of biasing the device. Most microwave FETs are of the depletion , this LNA design . It is important to remember that any amount of resistive loading in the drain circuit , STABMEAS1 STABMEAS1 = STAB_MEAS( S ) Figure 11. ADS Circuit File for Input Network for ATF-331M4 Low Noise , 1288 dB ( S (2,1) 0 -1.0 -10 -20 0 1 2 3 4 5 6 FREQUENCY ( GHz ) -40 0 1 2 3 4 5 6 FREQUENCY ( GHz ) 7 8 9 10 6229-17 AN 1288 Figure 14. ADS


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PDF ATF-331M4 5988-5905EN microstripline FR4 ATF-33 ATF-36163 ATF331M4 LL1608-FH15NK LL1608-FH3N3S LL1608-FH5N6S
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