The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1594LIS#TR Linear Technology LTC1594L - 4- and 8-Channel, 3V Micropower Sampling 12-Bit Serial I/O A/D Converters; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LTC1594LIS#TRPBF Linear Technology LTC1594L - 4- and 8-Channel, 3V Micropower Sampling 12-Bit Serial I/O A/D Converters; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LTC1454LIS#TR Linear Technology LTC1454 - Dual 12-Bit Rail-to-Rail Micropower DACs; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LTC1454LIS#TRPBF Linear Technology LTC1454 - Dual 12-Bit Rail-to-Rail Micropower DACs; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LTC1380IGN#TRPBF Linear Technology LTC1380 - Single-Ended 8-Channel/ Differential 4-Channel Analog Multiplexer with SMBus Interface; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C
LTC1393IGN#TRPBF Linear Technology LTC1393 - Single-Ended 8-Channel/ Differential 4-Channel Analog Multiplexer with SMBus Interface; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C

list of n channel fet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - PXI-2501

Abstract:
Text: 24- channel 2-wire Relay and FET Switch Multiplexers PXI-2501 and PXI-2503 ­ Preliminary Support , The PXI-2501 and the PXI-2503 are high-density switch modules that consist of a 24- channel 2 , module. In addition, full operation of the module is done through the supplied driver. A complete list , applications that require high-speed scanning of low voltage signals (±10V) because it uses FET switches that , , four 6- channel 6x4 12- channel N /A N /A PXI-2501 and PXI-2503 Configurations 341445A-01


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PDF 24-channel PXI-2501 PXI-2503 PXI-2501) PXI-2503) PXI-2503 SH68-68-S CH11 CH23 pxi digital multimeter
2008 - diode code GW 17 Schottky SMD

Abstract:
Text: interface, along with readback of FET and output rail status. In addition, current sense and pass and block , screen. Set the scope to trigger on the rising edge of Channel 1, at a threshold of about 1.5 V. Set the , ramp time of the Channel 1 waveform, from 0 volts to about 3.2 volts should be 2.6 ± 0.6 mS. The peak amplitude of the current pulse on Channel 4 (IPEAK) should be 195 ± 25 mA. A DVM can be used to verify the , waveform was obtained similar to that shown in Figure 8. The total ramp time of the Channel 2 trace, from


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PDF SLUU318 TPS2359 TPS2359EVM, diode code GW 17 Schottky SMD
1999 - P-Channel Depletion Mosfets

Abstract:
Text: , terminology, parameters, and typical applications. The following list of FET applications indicates the , FET with n-type channel embedded in p-type substrate. Figure 2. Idealized Structure of An , complete depletion of the channel under these conditions. Depletion Layer P G 3b) N-Channel FET , form a semiconductor junction on the channel of a FET to achieve gate control of the channel current , AN101 An Introduction to FETs The family tree of FET devices (Figure 1) may be divided into two


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PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1995 - P-Channel Depletion Mode FET

Abstract:
Text: applications. The following list of FET applications indicates the versatility of the FET family , Channel NDrain S D P N Depletion Layer P NChannel PGate Final form taken by FET with , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , transistor ( FET ) has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which


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PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
1996 - p channel depletion mosfet

Abstract:
Text: of the FET , and touches briefly on its basic characteristics, terminology, parameters, and typical applications. The following list of FET applications indicates the versatility of the FET family , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , ( FET ) has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET , High-Frequency Current Limiters Voltage-Controlled Resistors Mixers Oscillators The family tree of FET


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PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
P-Channel Depletion Mode FET

Abstract:
Text: , terminology, parameters, and typical applications. The following list of FET applications indicates the , on the channel of a FET to achieve gate control of the channel current. On a MOSFET, the metallic , Cross-Section N ­ Source Gate The lateral DMOS FET differs radically in its channel construction when , + N + Drain Figure 9. Vertical N-Channel Enhancement-Mode DMOS FET The novelty of the , AN101 An Introduction to FETs The family tree of FET devices (Figure 1) may be divided into two


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PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
1998 - E1351-66201

Abstract:
Text: PDFINFO H5 5 8 6 - 0 1 16- Channel FET Multiplexer HP E1351A Technical Specifications q , scan list Voltage, current, and resistance measurements Space for signal conditioning components Description The HP E1351A FET multiplexer is a B-size, 1-slot, register-based VXI module that switches 16 channels each of high, low, and guard. The FET multiplexer module consists of a B-size component card , Information Description 16- Channel FET Multiplexer Service Manual 3 Yr. Retn. to HP to 1 Yr. OnSite Warr


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PDF 16-Channel E1351A E1351A E1351-66201 E1352A, E1353A, E1357A, E1358A. list of n channel fet W01 fet 16 DIGITAL MULTIPLEXER E1326A E1411-80001 P channel Junction FET
1998 - E1351-66201

Abstract:
Text: PDFINFO H5 5 2 0 - 0 1 32- Channel Single-Ended FET Multiplexer HP E1352A Technical , downloaded scan list Voltage, current, and resistance measurements Space for signal conditioning components Description The HP E1352A FET multiplexer is a B-size, 1-slot, register-based VXI module that switches 32 channels of high only and one low common input. The FET multiplexer module consists of a , E1411B DMM. Use of this bus requires the SCPI command TRIGger:SOURce DBUS. To connect an external DMM


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PDF 32-Channel E1352A E1352A E1351-66201 E1351A, E1353A, E1357A, E1358A. E1301A E1352-80001 E1411 E1411B hp circuit diagram HP DC POWER CONNECTOR list of n channel fet
2006 - Not Available

Abstract:
Text: Glitch Maker FET RSET PS 1 Channel 1 TPS2410 UV FILTER STATUS OV + 5 V PS Load Output FET RSET PS 2 Channel 2 TPS2410 UV FILTER OV VAC Protect STATUS Figure 2 , channel 1, and Q12 and Q11 on channel 2. In single or parallel configurations, the body diode of the , turn off of the channel powering the load is de-sensitized. J8 Jumper J8 is the gate voltage for the , Install to use RSET, CH2 J16 Connects the load to CH2 C or FET J17 In to disable OV Channel 2


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PDF TPS2410EVM SLVU181A TPS2410 HPA204) TPS2411 TPS2410/11
2000 - Not Available

Abstract:
Text: Agilent E1351A 16- Channel FET Multiplexer Data Sheet • 1-Slot, B-size, register based â , terminal card and the analog bus connector. Description The Agilent E1351A FET Multiplexer is a B-size, 1-slot, register-based VXI module that switches 16 channels each of high, low, and guard. The FET , , 0.9, 0.75, 0.5 mm) 13,000 channels/s typ. 16- Channel FET Multiplexer Service Manual Terminal , scan list • Voltage, current, and resistance measurements • Space for signal conditioning


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PDF E1351A 16-Channel E1351A modu323 5965-5586E
2000 - Not Available

Abstract:
Text: Agilent E1352A 32- Channel Single-Ended FET Multiplexer Data Sheet • 1-Slot, B-size , guard input. The FET multiplexer module consists of a B-size component card (labeled E1351-66201 on , Description Product No. 32- Channel Single-ended FET Multiplexer Service Manual Terminal Card,16 , from downloaded scan list • Voltage, current, and resistance measurements • Space for signal , / second with either the E1326B DMM or E1411B DMM. Use of this bus requires the SCPI command TRIGger


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PDF E1352A 32-Channel E1351-66201 blo2390 5965-5520E
2006 - high power fet audio amplifier schematic

Abstract:
Text: . Supply Current, One Channel Figure 11. Efficiency vs. Output Power into 8 Rev. 0 | Page 7 of 20 , audio amplifier capable of delivering 1.4 W/ channel into 8 load. In addition to the minimal parts , evaluation board. It includes a brief description of the board as well as a list of the board specifications , configurations The SSM2302 has a micropower shutdown mode with a typical shutdown current of 20 nA. Shutdown is enabled by applying a logic low to the SD pin. The architecture of the device allows it to


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PDF SSM2302 16-lead, CP-16-3) SSM2302CPZ-R2 SSM2302CPZ-REEL1 SSM2302CPZ-REEL71 16-Lead CP-16-3 high power fet audio amplifier schematic 2 speakers 1 crossover amplifier pcb schematic diagram of speaker crossover SSM2302
2006 - SSM2302CPZ-R2

Abstract:
Text: + Noise THD + N Input Common-Mode Voltage Range Common-Mode Rejection Ratio Channel , brief description of the board as well as a list of the board specifications. Table 5. SSM2302 , shutdown current of 20 nA. Shutdown is enabled by applying a logic low to the SD pin. The architecture of the device allows it to achieve a very low level of pop and click. This minimizes voltage glitches at , . APPLICATIONS The fully differential input of the SSM2302 provides excellent rejection of common-mode noise


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PDF SSM2302 16-lead, CP-16-3) SSM2302CPZ-R2 SSM2302CPZ-REEL1 SSM2302CPZ-REEL71 16-Lead CP-16-3
2n4391, Voltage controlled

Abstract:
Text: G eneral Purpose 2N 4856 thru 2N4861 FET PARAMETERS AND THEIR RELATION TO APPLICATIONS OF VARIOUS , igh Speed Switching Is the resistance that appears at the output of the FET at a specific Drain to , FF) Is the current that flows at the output of the FET when the specified pinch-off voltage (Vr) is , echanical switch. 3 . loss Is the amount of current that flows at the output of the FET when a speciiied voltage is applied at the Drain of the FET . (Vos = O junction FET ) (V «(TH ) M OS FET ). This param eter is


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PDF SDF1001 2N4391 2N4393 2N4861 2N5S92 2N4119 2N5906 2NS432 2N5433 2NS397-2N 2n4391, Voltage controlled sw 2n4093
2001 - J132 MOSFET

Abstract:
Text: program the turn off point of the TPS2411. Glitch Maker PS1 Channel 1 TPS2412 Output FET +5V PS Load PS2 Channel 2 TPS2412 Output FET Figure 2. EVM Block Diagram 3 Materials , supply voltage slightly and note the gate on that channel pass FET turn off and the other channel FET , voltmeter, verify VDS for the on channel to be tens of millivolts. 5.7 Glitch Maker Set power , TPS2412/13 Evaluation Module, HPA227 9 www.ti.com List of Materials 7 List of Materials


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PDF TPS2412/13 HPA227 sluu267 J132 MOSFET MOSFET J132 SCHEMATIC POWER AUDIO MOSFET J132 FET list of n channel power mosfet Switching Power Supply Schematic Diagram using mosfet ECJ4YB1E226M n channel mosfet marked with AE ps1 supply TPS241X
2002 - SCC2691AC1

Abstract:
Text: a range of preset output voltages from 2.5 V to 4.5 V, it incorporates an internal P-channel FET , D24 N A44, B48, N40 A44 First device in the LPC900 family integrates 8 KB of Flash program , over 100 sales offices in more than 50 countries. For a complete up-to-date list of our sales offices , executing instructions in two to four clocks, six times the rate of standard 80C51 devices. Many system , P89LPC932 integrates a variety of on-chip memory along with a host of communications ports and system


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PDF P89LPC932 LPC900 BZA418A OT457 80C51 SCC2691AC1 mosfet base inverter with chargers circuit b48 DIODE schottky 74HC1G14 30689 all n type mosfet switch ic for notebook cpu core dc to dc conversion 74HC1GU04 B48 8 pin op amp 74AHC1G14 SOT-23 A44 transistor
2008 - Not Available

Abstract:
Text: timing and other control parameters are accessed via the I2C interface, along with readback of FET and , Channel 1 trace a couple divisions down from the top of the scope screen, and position the Channel 2 , trace towards the bottom of the scope screen. Set the scope to trigger on the rising edge of Channel 1 , shown in Figure 5. The total ramp time of the Channel 1 waveform, from 0 V to about 3.2 V should be 2.6 0.6 ms. The peak amplitude of the current pulse on Channel 4 should be 195 25 mA. A DVM can be used


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PDF TPS2459EVM SLUU349 TPS2459
2a 5060

Abstract:
Text: CMM0530 Preliminary Product Information May 1998 (1 of 5) Features □ Multi-Mode Operation , communications. CMM0530 is a member of 824 to 928 MHz 3.0V, 30.5 dBm Multi-Mode Power Amplifier Functional Block Diagram Vg2* Vgl 2 □= RFIN 3 a= N /C 4 □= J=_ □ 8 N /C O 7 RFOUT/Vd2 ~~1~1 6 RF OUT , low thermal impedance and low RF loss. The device requires minimum amount of external biasing and RF , A Thermal Resistance 25°C/W Channel Temperature 150°C RF Input Power +15 dBm* Storage Temperature


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PDF CMM0530 J-STD-18/AMPS IS-136/AMPS CMM0530 1/16W 1/10W ID26AWG 5600pF 0D00S7b 2a 5060 6 PIN SMD 3236 117450 CMM0530-CT IS-136 SSRN tdma circuit diagram
Not Available

Abstract:
Text: necessary to set the bias currents of the two FET stages in the CMM0530-RJ. The first stage gate bias , quiescent current of the second FET is 120 mA, while that of the first is 50 mA. The total quiescent is 170 , quiescent currents through each FET and, therefore, control the output power, adjacent channel power ratio , of the output FET . The placements and the values of the capacitor are important in achieving the , -S9. S di STOP 827* 1 M MHx S K t O w n Po«o r ff liftW Id & IS-136 TDMA Channel Power vs


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PDF CMM0530-RJ IS-98/AMPS IS-136/AMPS CMM0530-RJ
nmos pmos array

Abstract:
Text: area contains 400 CMOS transistor pairs. A transistor pair consists of one p channel and one n channel , can be configured to do many functions. Here's a list of some of them: • A to D and D to A , section, however they are laid out such that p and n channel devices can be used separately. This allows , and have a tolerance of about 30%. 7. High resistance FET section. These devices are used to make , gate construction using a double-poly p-well process. The minimum gate channel length is 4 microns


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PDF
FET U310

Abstract:
Text: currents of up to 1 amp. The following parameters are the most important considerations in selecting a FET , FET PARAMETERS AND THEIR RELATION TO APPLICATIONS OF VARIOUS TYPES. 2N3824 2N4417-2N4416 U310 , thru 2N4093 MOS Switch High Speed Switching Is the resistance that appears at the output of the FET , switch. 2. L> (O FF) Is the current that flows at the output of the FET when the specified pinch-off , in a m echanical switch. 3 . loss Is the amount of current that flows at the output of the FET


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PDF SDF1001 2N4391 2N4393 2N4856 2N4861 FET U310 FET 2N4416 2N2606 2N5396-2N5397 2N5397-2N5396 2N3687A 2n4117 jan 2N5906
acumos

Abstract:
Text: transistor pair consists of one p channel and one n channel device. Since it takes two pairs to make a two , be configured to do many functions. Here's a list of some of them: • A to D and D to A converter , devices are the same as those in the digital section, however they are laid out such that p and n channel , contains 54 20k ohm P well resistors and have a tolerance of about 30%. 7. High resistance FET section , gate construction using a double-poly p-well process. The minimum gate channel length is 4 microns


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PDF
2008 - Not Available

Abstract:
Text: the rising edge of Channel 1, at a threshold of about 1.5 V. Set the time base to 1 mS/div, and set , obtained similar to the one shown in Figure 4. The total voltage ramp time of the Channel 1 waveform, from , amplitude of the current pulse on Channel 4 should be 195 25 mA. A DVM can be used to verify the voltage at , move the Channel 1 and 2 trace positions for viewing a couple of 12-V waveforms in the top half of the , Figure 6. The total voltage ramp time of the Channel 2 trace, from 0 volts to about 11.8 V should be 1.3


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PDF SLUU328 TPS2358
2001 - e1539

Abstract:
Text: subsystem provides a new level of density by combining a 16-bit A/D with a 64- channel differential FET , /s maximum sampling/scanning rate divided by the number of channels in the scan list , which can be 1 , cumulative mode can be selected that holds the channel number of any out-of-limit reading since the last , higher frequency signals using the E1501A 8- Channel Direct Input SCP will require the use of external , autoranging gains of x1, x4, x16, x64, and x256. An SCP must be used with each eight channel input block to


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PDF E1413C 64-Channel E1413C 16-bit E1513A 5965-5583E e1539
2013 - Not Available

Abstract:
Text: on each channel that activate an alarm if the input signals are out of the set range. The 34980Aâ , total switch channel count of 560. The 3499C nine-slot mainframe fully loaded with 2-wire multiplexer modules houses a total of 360 switch channels. For a quick summary of the maximum switch channel count , or both limits for each channel The 34980A multifunction switch/measure unit consists of an , that use commands unique to their functionality. Appendix A includes a list of the 34980A and 3499A/B


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PDF 499A/B/C 4980A 4980A BP-7-22-13)
Supplyframe Tracking Pixel