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CP841A_3C3R (CC109145331) GE Critical Power Galaxy Pulsar Edge Controller for Compact Power Line Applications
CP841A_3C3R_S (150032047) GE Critical Power Galaxy Pulsar Edge Controller for Compact Power Line Applications with Security Features Update
MPS48-EP300 GE Critical Power MPS48 DC Power System
MPS48-3R<00 GE Critical Power MPS48 DC Power System
GCP841A_0I6R_USB_S Controller (150043558) GE Critical Power Global Power System Galaxy Pulsar Edge Controller
AXB050X43-SRZ GE Critical Power Austin Lynx 24V:Non-isolated Power Module

linear applications of power MOSFET IRF640 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
Text: these power MOSFETs are designed for applications such as switching regulators, switching converters , ŽÃŽ, RL = 5.4£i, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating , Measured From the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Showing the Internal Devices ,  IRF640 , IRF641, IRF642, .e-,conductor ¡RF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, juiy 1998 N-Channel Power MOSFETs Features 16A and 18A, 150V and 200V rDS(ON) =


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PDF IRF640, IRF641, IRF642, RF643, RF1S640, RF1S640SM TB334 IRF640 O-220AB IRF640 RF640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
2008 - irf640

Abstract: hexfet irf640 IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low , acquisition of International Rectifier's Power Control Systems (PCS) business, which closed in April 2007 , dV/dt Rating · Repetitive Avalanche Rated · Fast Switching · Ease of Paralleling · Simple Drive Requirements · Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power


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PDF IRF640, SiHF640 O-220 12-Mar-07 irf640 hexfet irf640 IRF640 circuit
2009 - IRF640PBF

Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power , MOSFET ORDERING INFORMATION TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free , 150 Linear Derating Factor Repetitive Avalanche Energya Maximum Power Dissipation Peak , 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 · Ease of Paralleling 39 RoHS* · Fast


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PDF IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
2001 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Text: of operation. All of these power MOSFETs are designed for applications such as switching regulators , IRF640 , RF1S640SM Data Sheet June 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Title , · SOA is Power Dissipation Limited · Nanosecond Switching Speed · Linear Transfer Characteristics , , RL = 5.4, MOSFET Switching Times are Essentially Independent of Operating Temperature - 13 , Components to PC Boards" Symbol BRAND IRF640 wer OSTs) uthor 1585.5 Features These are


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PDF IRF640, RF1S640SM TA17422. TB334 IRF640 RF1S640SM IRF640 applications note irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 TB334
IRF640 applications note

Abstract: IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , regarding the suitability of products for certain types of applications are based on Vishay's knowledge of , applications or for any other application in which the failure of the Vishay product could result in personal


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit
2012 - IRF640 applications note

Abstract: IRF640 circuit IRF640 n-channel MOSFET
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications . Such statements are not binding statements about the suitability of products


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET
IRF640

Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the , S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 , applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications . Such statements are not binding statements about the suitability of


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
1RF640

Abstract: 1RF640S RD540 irf640a 3V IC LINEAR SMD IRF640 applications note ov5s 1D11A IRF640 IRF640 smd
Text: International Kg Rectifier PD-9.374G IRF640 HEXFET® Power MOSFET • Dynamic dv/dt Rating â , -220 package is universally preferred for all commercial-industrial applications at power dissipation levels to , 220 International S Rectifier PD-9.902 IRF640S HEXFET® Power MOSFET Surface Mount Available in Tape & , cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It , package. The SMD-220 is suitable for high current applications because of its low internal connection


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PDF IRF640 T0-220 O-220 1RF640 1RF640S RD540 irf640a 3V IC LINEAR SMD IRF640 applications note ov5s 1D11A IRF640 smd
1999 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
Text: of operation. All of these power MOSFETs are designed for applications such as switching regulators , IRF640 , RF1S640SM Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs , Avalanche Energy Rated · SOA is Power Dissipation Limited · Nanosecond Switching Speed · Linear Transfer , , MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge


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PDF IRF640, RF1S640SM TA17422. IRF640 applications note irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
1997 - IRF640 applications note

Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
Text: IRF640 , IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description · 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are


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PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM IRF640 applications note IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
IRFG43

Abstract: motor driver IRF640
Text: stability of the electrical parameters. They are well suited for applications such as switching power , HEXFET® technology is the key to International Rectifier’s advanced line of power M O S FE T transistors. The efficient geometry and unique processing of this latest “State of the Art” design , Product Summary Part Number bvdss R DS(on) IRF640 200V 0 .1 8 0 18A IRF641 150V , diode recovery dv/dt capability. T he H EX FE T transistors also feature all of the well established


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PDF IRFS40 IRFG41 IRF642 IRFG43 T0-220AB IRF640 IRF641 IRF643 C-259 IRFG43 motor driver IRF640
irf640

Abstract: hexfet irf640 power MOSFET IRF640 80 watt
Text: International gjg Rectifier HEXFET® Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements PD-9.374G IRF640 Vdss=200V RDS(on) = 0.18Q lD = 18A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low , applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package


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PDF IRF640 O-220 irf640 hexfet irf640 power MOSFET IRF640 80 watt
2011 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , . Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications . Such


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PDF IRF640, SiHF640 2002/95/EC O-220AB 11-Mar-11
2001 - linear applications of power MOSFET IRF640

Abstract: power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
Text: advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as , IRF640 , RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power , SOA is Power Dissipation Limited · Nanosecond Switching Speed · Linear Transfer Characteristics · , , MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) Qgs Gate


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PDF IRF640, RF1S640, RF1S640SM TA17422. linear applications of power MOSFET IRF640 power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
2013 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and , applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications . Such statements are not binding statements about the suitability of , 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 • Ease of Paralleling 39 RoHS* • Fast


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and , of products for certain types of applications are based on Vishay’s knowledge of typical , applications or for any other application in which the failure of the Vishay product could result in personal , 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 • Ease of Paralleling 39 RoHS* • Fast


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2015 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and , regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of , life-sustaining applications or for any other application in which the failure of the Vishay product could result , 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 • Ease of Paralleling 39 RoHS* • Fast


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2014 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and , of products for certain types of applications are based on Vishay’s knowledge of typical , applications or for any other application in which the failure of the Vishay product could result in personal , 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 • Ease of Paralleling 39 RoHS* • Fast


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and , applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications . Such statements are not binding statements about the suitability of , 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 • Ease of Paralleling 39 RoHS* • Fast


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct KA336Z IRFZ44 PNP high voltage pnp transistor 700v KS82C670N
Text: , 0.28R, 14A, 125W, N-CH, T0-220 USE IRF644 IRF645 TR: Transistor, LI: Linear , FET: MOSFET , MPR , IRF9630 IRF9633 TR: Transistor, LI: Linear , FET: MOSFET , MPR: Microprocessor Peripherals, T&R: Tape & Reel , : Transistor, LI: Linear , FET: MOSFET , MPR: Microprocessor Peripherals, T&R: Tape & Reel * See Supplement 1 , : Transistor, LI: Linear , FET: MOSFET , MPR: Microprocessor Peripherals, T&R: Tape & Reel ' See Supplement 1 , 429 431 431 434 434 437 437 443 433 446 446 451 TR: Transistor, LI: Linear , FET: MOSFET , MPR


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PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct KA336Z IRFZ44 PNP high voltage pnp transistor 700v KS82C670N
IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v transistor IRF9640 darlington NPN 600V 12a transistor 600v 12A TO220F N-CH POWER MOSFET TO-92 KSH117-1 transistor irf620 NPN Transistor 600V 5A TO-220
Text: : Linear , F E T : MOSFET , MPR : Microprocessor Peripherals, T&R : Tape & Reel * See Supplement 1 POWER , 93 93 96 96 100 100 98 98 102 102 104 104 TR : Transistor, L I : Linear , FET : MOSFET , MPR , TR : Transistor, L I: Linear , FET : MOSFET , MPR : Microprocessor Peripherals, T&R : Tape & Reel * See , 213 213 213 219 219 219 219 225 225 225 225 23I 231 TR : Transistor, LI : Linear , FET : MOSFET , MPR , 305 310 310 315 315 325 325 325 325 TR : Transistor, L I : Linear , FET : MOSFET , MPR


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PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v transistor IRF9640 darlington NPN 600V 12a transistor 600v 12A TO220F N-CH POWER MOSFET TO-92 KSH117-1 transistor irf620 NPN Transistor 600V 5A TO-220
2009 - irf640

Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF
Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY , cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It , mount package. The D2PAK is suitable for high current applications because of its low internal , version (IRF640L/SiHF640L) is available for low-profile applications . G D S S N-Channel MOSFET , applications . Product names and markings noted herein may be trademarks of their respective owners


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PDF IRF640S, IRF640L, SiHF640S SiHF640L O-263) O-262) 18-Jul-08 irf640 5d surface mount diode IRF640L IRF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF
2008 - IRF640 SILICONIX

Abstract: No abstract text available
Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V , generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching , package capable of accommodating die size up to HEX-4. It provides the highest power capability and the , high current applications because of its low internal connection resistance and can dissipate up to 2.0 , for low-profile applications . G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead


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PDF IRF640S, IRF640L, SiHF640S SiHF640L O-262) O-263) 12-Mar-07 IRF640 SILICONIX
2010 - Not Available

Abstract: No abstract text available
Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V , -263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of , surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power , suitable for high current applications because of its low internal connection resistance and can dissipate , available for low-profile applications . D2PAK (TO-263) SiHF640STRL-GE3a IRF640STRLPbFa SiHF6340STL-E3a


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PDF IRF640S, IRF640L, SiHF640S SiHF640L 2002/95/EC O-262) O-263) 18-Jul-08
IRF640L

Abstract: IRF640S SiHF640S IRF640STRRPBF
Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY , on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die , merchantability. Statements regarding the suitability of products for certain types of applications are based on , applications . Such statements are not binding statements about the suitability of products for a particular , , life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay


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PDF IRF640S, IRF640L, SiHF640S SiHF640L 2002/95/EC O-263) O-262) 11-Mar-11 IRF640L IRF640S IRF640STRRPBF
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