The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS

ld smd transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - HS-4424BRH

Abstract: HS-4424RH HS-26CLV32RH IS-705RH HS-26CLV31RH HS-26CLV32 HS-4080ARH 5962-95694 transistor smd xb HS-1840ARH
Text: Device DSCC SMD HS-565BRH 5962-96755 Die (Military Visual), 24 Ld FlatPack, 24 Ld SBDIP V , (space level). All products on individual DSCC SMD drawings. Radiation Hardened ICs Pg 8 Data , Latches Flip-Flops Counters Power on Reset Registers Transistor Arrays Level Shifters , induced, and the vertical transistor structures have been shown to perform very well under total dose at , transistor for excellent total dose performance (both low and high dose rates) Intersil understands


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PDF BR-558 HS-4424BRH HS-4424RH HS-26CLV32RH IS-705RH HS-26CLV31RH HS-26CLV32 HS-4080ARH 5962-95694 transistor smd xb HS-1840ARH
2009 - 5962F9568902VXC

Abstract: HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063
Text: 100krad Ultra High Frequency NPN-PNP Transistor Array ISL73096RHVF 5962F0721801VXC 16 Ld , 5962F0721802VXC 16 Ld SBDIP 300krad Ultra High Frequency NPN-PNP Transistor Array ISL73127RHVX , ISL73128RHVF 5962F0721803VXC 16 Ld FlatPack 300krad Ultra High Frequency NPN-PNP Transistor Array , Transistor Array HS9-6254RH-Q 5962F9764101VXC 16 Ld FlatPack 300krad 8k x 8 CMOS PROM HS1 , Mkt. Number SMD Number Package RH Level Digital Logic Buffers 5962F9854101VXC 20 Ld


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PDF MIL-PRF-38535 RS-232) IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC 5962F9568902VXC HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063
2008 - IS9-2100ARH-8

Abstract: 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC
Text: 100krad Ultra High Frequency NPN-PNP Transistor Array ISL73096RHVF 5962F0721801VXC 16 Ld , 5962F0721802VXC 16 Ld SBDIP 300krad Ultra High Frequency NPN-PNP Transistor Array ISL73127RHVX , ISL73128RHVF 5962F0721803VXC 16 Ld FlatPack 300krad Ultra High Frequency NPN-PNP Transistor Array , Transistor Array HS9-6254RH-Q 5962F9764101VXC 16 Ld FlatPack 300krad 8K x 8 CMOS PROM HS1 , Mkt. Number SMD Number Package RH Level Digital Logic Buffers 5962F9854101VXC 20 Ld


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PDF MIL-PRF-38535 RS-232) IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC IS9-2100ARH-8 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC
2007 - cdfp4-f16

Abstract: E4 SMD TRANSISTOR CDFP4-F16 reference ISL73096RHVX 5962F0721801V9A AN1503 ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays
Text: hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP , in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-07218. A "hot-link" is provided on our website for downloading. Features · Electrically Screened to SMD # 5962-07218 · QML Qualified per MIL-PRF , -55 to +125 DIE 5962F0721801VXC ISL73096RHVF (Notes 1, 2) -55 to +125 16 LD FLATPACK


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PDF ISL73096RH, ISL73127RH, ISL73128RH ISL73127RH ISL73128RH ISL73096RH ISL73096, cdfp4-f16 E4 SMD TRANSISTOR CDFP4-F16 reference ISL73096RHVX 5962F0721801V9A AN1503 NPN PNP Transistor Arrays
2003 - 5962F9954701VYC

Abstract: t3d 19 smd transistor T3C T3D 05 t3d 39 HS-117RH T3D 55 5962F9954702VYC linear current regulator 5962F9954702VXC
Text: Hard QML devices are controlled by the Defense Logistics Agency (DLA). The SMD numbers listed here must be used when ordering. Detailed electrical specifications for the HS-117RH are contained in SMD , DLA SMD # 5962-99547 · QML Qualified per MIL-PRF-38535 Requirements · Radiation Environment - 300 krad , Pin Configurations HS2-117RH (TO-39 CAN) BOTTOM VIEW ADJUST 2 HSYE-117RH ( SMD .5 CLCC) BOTTOM VIEW , 1 IN OUT ADJUST NOTE: No current JEDEC outline for the SMD .5 package. Refer to SMD for package


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PDF HS-117RH HS-117RH 40VDC. 25APEAK HS-11scription FN4560 5962F9954701VYC t3d 19 smd transistor T3C T3D 05 t3d 39 T3D 55 5962F9954702VYC linear current regulator 5962F9954702VXC
transistor smd Q 865

Abstract: SMD footprint design smd transistor 647 046 sot428 PHD3055E PHB3055E PHP3055E SC18 T0220AB T404
Text: Philips Semiconductors Preliminary specification TrenchMOS™ transistor PHP3055E, PHB3055E , thermal cycling performance • Low thermal resistance SYMBOL QUICK REFERENCE DATA VDSS = 55 V lD = , power transistor in a plastic envelope using 'trench' technology. The device has very low on-state , . May 1999 1 Rev 1.100 Philips Semiconductors Preliminary specification TrenchMOS™ transistor , MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown VGS = 0 V; lD = 0.25 mA; 55 - - V voltage Tj =


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PDF PHP3055E, PHB3055E, PHD3055E PHP3055E T0220AB) PHB3055E OT404 transistor smd Q 865 SMD footprint design smd transistor 647 046 sot428 PHD3055E SC18 T0220AB T404
2003 - T3D 55

Abstract: smd transistor T3C HS-117RH 5962F9954701VYC E4 SMD TRANSISTOR HS-117EH 117eh 5962F99-54701VXC
Text: SMD numbers listed here must be used when ordering. Detailed electrical specifications for the HS-117RH, HS-117EH are contained in SMD 5962-99547. A "hot-link" is provided on our website for downloading. Features · Electrically Screened to DLA SMD # 5962-99547 · QML Qualified per MIL-PRF-38535 Requirements · , 3 1 1 - ADJUST 2 - IN 3 - OUT HSYE-117RH ( SMD .5 CLCC) BOTTOM VIEW HS9S-117RH (TO-257AA FLANGE MOUNT) TOP VIEW 3 2 1 IN OUT ADJUST NOTE: No current JEDEC outline for the SMD .5 package. Refer to


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PDF HS-117RH, HS-117EH HS-117EH 40VDC. 25APEAK FN4560 T3D 55 smd transistor T3C HS-117RH 5962F9954701VYC E4 SMD TRANSISTOR 117eh 5962F99-54701VXC
phd55n03

Abstract: transistor smd xc PHB55N03LT PHD55N03LT SMD footprint design PHP55N03LT SC18 T0220AB TRANSISTOR LD25
Text: Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET , = 25 V • Very low on-state resistance • Fast switching / lD = 55 A • Low thermal , V) GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a , N-channel TrenchMOS™ transistor PHP55N03LT, PHB55N03LT Logic level FET PHD55N03LT THERMAL RESISTANCES , CONDITIONS MIN. MAX. UNIT wDSS Drain-source non-repetitive undamped inductive turn-off energy lD = 25 A; VDD


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PDF PHP55N03LT, PHB55N03LT PHD55N03LT 14mil PHP55N03LT T0220AB) phd55n03 transistor smd xc PHD55N03LT SMD footprint design SC18 T0220AB TRANSISTOR LD25
11n06

Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
Text: Philips Semiconductors Preliminary specification TrenchMOSTM transistor Logic level FET , Vdss -55 V lD = 10.5 A R DS(ON) <150 mQ. (VG S = 5 V) R D S(O N ) <130 mQ (VGS= 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope , Preliminary specification TrenchMOSTM transistor Logic level FET THERMAL RESISTANCES SYMBOL PARAMETER R , ) CONDITIONS VG S = 0 V; lD = 0.25 mA; T, = -55'C V ds = VGS, Id = 1 mA Tj = 175°C Tj = -55'C MIN. 55 50 1.0


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PDF PHP11N06LT, PHB11N06LT, PHD11N06LT PHP11N06LT T0220AB) 11n06 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
2005 - E hall sensor smd 4 pin

Abstract: No abstract text available
Text: Code SE (TSOT-3L) LD (UTQFN-6L) 1 Functional Diagram 2 General Description The MLX90248 , then the output transistor is driven to change states accordingly. While in the "Sleep" cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the , -3L) . 9 15.2 LD Package (UTQFN


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PDF MLX90248 MLX90248 ISO14001 Jan/09 E hall sensor smd 4 pin
2003 - T3D 05

Abstract: t3d 39 T3-D 5962f9954701
Text: €¢ Electrically Screened to DLA SMD # 5962-99547 The Intersil HS-117RH, HS-117EH has advantages over other , Configurations HSYE-117RH ( SMD .5 CLCC) BOTTOM VIEW HS2-117RH (TO-39 CAN) BOTTOM VIEW ADJUST 2 2 3 , NOTE: No current JEDEC outline for the SMD .5 package. Refer to SMD for package dimensions. The TO , -117EH Ordering Information 5962F9954702VUC HS2-117EH-Q -55 to +125 3 LD METAL CAN T3.C 5962F9954702V9A HS0-117EH-Q -55 to +125 DIE 5962F9954702VXC HS9S-117EH-Q -55 to +125 3 LD TO


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PDF HS-117RH, HS-117EH HS-117EH 40VDC. 25APEAK FN4560 T3D 05 t3d 39 T3-D 5962f9954701
2005 - hall smd 4 pin

Abstract: E hall sensor smd 4 pin smd hall effect transistor analog hall smd 4 pin smd hall effect sensor 3 pin SMD hall sensor smd code Hall JESD22-A113 JESD22-A114 JESD22-B102
Text: 85° C C) E (-40° to 85° C C) Package Code SE (TSOT-3L) LD (UTQFN-6L) 2 General , . If the flux density is above or below the Bop/Brp thresholds then the output transistor is driven to change states accordingly. While in the "Sleep" cycle the output transistor is latched in its , lifetime in battery powered systems. The output transistor of the 90248 will be latched on (BOP) in the , -3L) . 9 15.2 LD Package (UTQFN


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PDF MLX90248 ISO14001 Jan/09 hall smd 4 pin E hall sensor smd 4 pin smd hall effect transistor analog hall smd 4 pin smd hall effect sensor 3 pin SMD hall sensor smd code Hall JESD22-A113 JESD22-A114 JESD22-B102
BSH204

Abstract: ld smd transistor p-channel mos sot23 transistor SOT23 J5 SMD A8 Transistor transistor smd JR smd transistor LD smd transistor js smd transistor A8
Text: . DESCRIPTION P-channel enhancement mode MOS transistor in a SOT23 SMD package. CAUTION The device is , DISCRETE SEMICONDUCTORS 1MT SlnlEiT BSH204 P-channel enhancement mode MOS transistor , PHILIPS Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor , on-state resistance VGS = -2.5 V; lD = -0.4 A - 0.75 Q. Ptot total power dissipation Ts = 80 °C - 0.5 W , – * BSH204 MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).


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PDF BSH204 SC13b BSH204 ld smd transistor p-channel mos sot23 transistor SOT23 J5 SMD A8 Transistor transistor smd JR smd transistor LD smd transistor js smd transistor A8
1999 - 4 digit 7 segment lcd display S20110712

Abstract: 5962F9863101V9A 5962F9863101VCC 5962F9863101VXC ACS30DMSR-03 ACS30KMSR-03 ACS30MS CDIP2-T14 MIL CDFP3-F14
Text: are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS30MS are contained in SMD , (oC) PACKAGE DESIGNATOR -55 to 125 14 Ld SBDIP CDIP2-T14 25 14 Ld SBDIP CDIP2-T14 -55 to 125 14 Ld Flatpack CDFP3-F14 ACS30K/SAMPLE-03 25 14 Ld Flatpack , : 1.0µm ±0.1µm ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count


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PDF ACS30MS ACS30MS MIL-PRF-38535 4 digit 7 segment lcd display S20110712 5962F9863101V9A 5962F9863101VCC 5962F9863101VXC ACS30DMSR-03 ACS30KMSR-03 CDIP2-T14 MIL CDFP3-F14
2005 - analog hall smd 4 pin

Abstract: smd code Hall transistor smd code marking tm E hall sensor smd 4 pin smd hall effect sensor smd code Hall element hall smd 4 pin smd hall effect transistor TAW SOT23 MARKING CODE 4 pin SMD hall sensor
Text: ) E (-40° to 85° C C) Package Code SE (TSOT-3L) LD (UTQFN-6L) 2 General Description TM , flux density is above or below the Bop/Brp thresholds then the output transistor is driven to change states accordingly. While in the "Sleep" cycle the output transistor is latched in its previous state , battery powered systems. The output transistor of the 90248 will be latched on (BOP) in the presence of , - 15.2 LD Package (UTQFN


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PDF MLX90248 ISO14001 Sept/06 analog hall smd 4 pin smd code Hall transistor smd code marking tm E hall sensor smd 4 pin smd hall effect sensor smd code Hall element hall smd 4 pin smd hall effect transistor TAW SOT23 MARKING CODE 4 pin SMD hall sensor
2003 - SMD 5962-99547

Abstract: 5962F9954701VYC 5962F9954701VUC hs2-117rh-8 HS-117RH HSYE-117RH-Q 5962F99-54701VXC smd linear regulator 5962F9954701QYC
Text: Visual) 3 Ld Can MSL N/A SMD - HS2-117RH-8 Active Ind N/A 5962F9954701QUC HS2 , in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Features · Electrically Screened to DSSC SMD # 5962-99547 · QML Qualified per MIL-PRF-38535 Requirements · Radiation , specifications for the HS-117RH are contained in SMD 5962-99547. A "hot-link" is provided on our website for , -117RH/Proto HSYE-117RH/Proto IN 1 3 OUT HSYE-117RH ( SMD .5 CLCC) BOTTOM VIEW 2 3 1 - ADJUST 2 - IN


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PDF HS-117RH FN4560 HS-117RH 40VDC. 25APEAK ISL72991RH SMD 5962-99547 5962F9954701VYC 5962F9954701VUC hs2-117rh-8 HSYE-117RH-Q 5962F99-54701VXC smd linear regulator 5962F9954701QYC
2000 - 5962F0052301VYC

Abstract: 5962F0052301VXC IS1009RH IS2-1009RH-Q smd marking LD SMD TRANSISTOR MARKING KEY 5962-00523 ISYE-1009RH-8 TO-206AB IS2-1009RH-8
Text: Contact Us Contact Us Contact Us Contact Us Part No. IS0-1009RH-Q Package MSL SMD - 3 Ld , Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed , SMD 5962-00523. Features · Electrically Screened to SMD # 5962-00523 · QML Qualified per MIL-PRF , 5962F00 52301VYC 5962F0052301QYC ISYE-1009RH-8 Q 5962F00 52301QYC ISYE-1009RH ( SMD .5) BOTTOM VIEW , Density <1.0 x 105 A/cm2 Transistor Count 26 Metallization Mask Layout IS-1009RH ADJ V+ V


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PDF IS-1009RH FN4780 IS-1009RH 5962F0052301VYC 5962F0052301VXC IS1009RH IS2-1009RH-Q smd marking LD SMD TRANSISTOR MARKING KEY 5962-00523 ISYE-1009RH-8 TO-206AB IS2-1009RH-8
CDIP2-T14

Abstract: ld smd transistor CDFP3-F14 5962-98613 HS139RH SMD 5962-98613 HS1-139RH-8 5962F9861301VXC CDIP2-T14 MIL 13KA
Text: Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed , SMD 5962-98613. A "hot-link" is provided on our hom epage with instructions for downloading. http://w , . 3 x 105 RAD(Si) - SEU LET T h re s h o ld . TBD , Level Shifting · Analog to Digital Conversion Ordering Information SMD PART NUMBER 5962F9861301VCC , -55 to 125 -55 to 125 25 PACKAGE 14 Ld SBDIP 14 Ld SBDIP 14 Ld SBDIP 14 Ld Flatpack 14 Ld Flatpack 14


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PDF HS-139RH HS-139RH CDIP2-T14 ld smd transistor CDFP3-F14 5962-98613 HS139RH SMD 5962-98613 HS1-139RH-8 5962F9861301VXC CDIP2-T14 MIL 13KA
SMD A8 Transistor

Abstract: transistor smd JR BSH104 smd transistor js
Text: . DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. CAUTION The device is , Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor , resistance VGS = 2.5 V; lD = 0.65 A - 0.3 Q. Ptot total power dissipation Ts = 80 °C - 0.5 W 1997 Nov 26 , – * BSH104 MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , Semiconductors Objective specification N-channel enhancement mode . . r^o. ■* BSH104 MOS transistor


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PDF BSH104 MAM273 SMD A8 Transistor transistor smd JR BSH104 smd transistor js
2006 - 5962R9665101VXC

Abstract: 5962F9568902VXC 5962F0151001VXC 5962F9568901VXC 5962F9666302VXC 5962R9563701VXC 5962F9954701VXC 5962R9853301VXC HS9-26CT32RH-Q 5962F9956002VXC
Text: -4080ARH-Q 5962F9961701VSC 20 Ld Flatpack 300krad Linear Transistor Arrays 5 NPN Array, 8GHz, 3.5dB Noise Linear , Hardened Products Selection Chart Device Description Mkt. Number SMD Number Package RH Level , Ld SBDIP 100krad 12-Bit, 4MHz, with Reference HS9-565BRH-Q 5962R9675502VXC 24 Ld Flatpack 100krad Single, 8-Channel, with OV Protection HS1-508BRH-8 5962F9674202QEC 16 Ld SBDIP 300krad Single, 8-Channel, with OV Protection HS1-508BRH-Q 5962F9674202VEC 16 Ld


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PDF BR-558 5962R9665101VXC 5962F9568902VXC 5962F0151001VXC 5962F9568901VXC 5962F9666302VXC 5962R9563701VXC 5962F9954701VXC 5962R9853301VXC HS9-26CT32RH-Q 5962F9956002VXC
Not Available

Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel TrenchMOS™ transistor Logic level , / ( VD S = 55 V S 'T P \ lD = 19 A ^ ds(on) — 75 m£2 (VG = 5 V) S A ^ ds(on) —70 m , transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters â , „¢ transistor Logic level FET PHP21N06LT, PHB21N06LT PHD21N06LT AVALANCHE ENERGY LIMITING VALUES , ) O Drain-source breakdown voltage Gate threshold voltage MIN. CONDITIONS VG = 0 V; lD =


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PDF PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT T0220AB) PHB21N06LT OT428 OT428
CDFP3-F14

Abstract: CDIP2-T14
Text: Hard QML devices are controlled by the Defense Supply C enter in Columbus (DSCC). SMD numbers must be , this are contained in SMD 5962-95690. A “hot-link” is provided on our hom epage with instructions , Environments Ordering Information SMD PART NUMBER HARRIS PART NUMBER TEMP. RANGE (°C) PACKAGE CASE OUTLINE 5962R9569001VCC HS1-5104ARH-Q -55 to 125 14 Ld SBDIP CDIP2-T14 N/A HS1-5104ARH/Proto -55 to 125 14 Ld SBDIP CDIP2-T14 N/A HS1-5104ARH/Sample 25 14


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PDF HS-5104ARH MIL-PRF-38535 HS-5104ARH 01nF/Socket IN4002 2420nm 2530nm 483nm CDFP3-F14 CDIP2-T14
2000 - HS-26CT32RH

Abstract: smd transistor A1A 5962F9563101QXC
Text: all four receivers. Features • Electrically screened to SMD # 5962-95631 • QML qualified per , devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed , for these devices are contained in SMD 5962-95631. A “hot-link” is also provided on our homepage , ) PACKAGE PKG. DWG. # 5962F9563101QEC HS1-26CT32RH-8 Q 5962F95 63101QEC -55 to +125 16 Ld SBDIP D16.3 5962F9563101QXC HS9-26CT32RH-8 Q 5962F95 63101QXC -55 to +125 16 Ld


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PDF HS-26CT32RH, HS-26CT32EH HS-26CT32EH RS-422. 200mV 05A/cm2 HS-26CT32RH smd transistor A1A 5962F9563101QXC
ld smd transistor LD 33

Abstract: TRANSISTOR ML SMD 10LLs transistor ld smd transistor TRANSISTOR ML 13 SMD BSP145 smd transistor fh 42b transformer
Text: drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD , transistor BSP145 FEATURES • Direct interface to C-MOS, TTL, etc. • High speed switching • No , voltage open drain - ±20 V VGSth gate-source threshold voltage lD = 1 mA; VDS = VGs 3 4 V ID drain current - 250 mA f^DSon drain-source on-state resistance lD = 100 mA; VGS = 10V 10 14 Í2 Ptot total , N-channel enhancement mode BSP145 vertical D-MOS transistor LIMITING VALUES In accordance with the


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PDF BSP145 OT223 OT223 711Dfi2b OT223. 711002b ld smd transistor LD 33 TRANSISTOR ML SMD 10LLs transistor ld smd transistor TRANSISTOR ML 13 SMD BSP145 smd transistor fh 42b transformer
BSH103

Abstract: smd transistor GD
Text: enhancement mode MOS transistor in a SOT23 SMD package. PINNING - SOT23 PIN 1 2 3 SYMBOL BSH103 , Philips Semiconductors Product specification N-channel enhancement mode MOS transistor , Id = 1 Ts = 80 °C VGS = 2.5 V; lD = 0.5 A Ts = 80 °C CAUTION This product is supplied in anti-static , Semiconductors Product specification N-channel enhancement mode a »x MOS transistor LIMITING VALUES In , Product specification N-channel enhancement mode MOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s


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PDF BSH103 BSH103 smd transistor GD
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