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LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

lc 945 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
lc 945 p transistor

Abstract:
Text: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz · · Low noise figure High


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PDF S822T/S822TW S822T S822TW 20-Jan-99 lc 945 p transistor transistor 2 FC 945 lc 945 p transistor BU 184 transistor CB 945 VISHAY MARKING SJ
lc 945 p transistor

Abstract:
Text: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz 1 1 · · Low noise figure


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PDF S852T/S852TW S852T S852TW 20-Jan-99 lc 945 p transistor
lc 945 p transistor NPN TO 92

Abstract:
Text: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 , Breakdown Voltage E to B DC Current Gain Tested) ERICSSON ^ Conditions Ib = 0 A, lc = 5 mA V Be = 0 V, lc = 5 mA |c = 0 A, Ie = 5 mA V CE = 5 V, lc = 1.5 A Symbol V(BR)CEO V (BR)CES V(BR)EBO hFE , - -900 915 930 945 960 1 Frequency (MHz) ERICSSON ^ Ericsson Inc. RF Power Products


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lc 945 p transistor NPN TO 92

Abstract:
Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz , Rejc 9-45 PTB 20230 Electrical Characteristics Characteristic Breakdown Voltage C to E , Vbe = 0 V, lc = 100 mA Ib = 0A , lc = 100 mA, lc = 0 A, le = 5 mA Vce = 5 V, lc = 1 A R Be Symbol , Input Return Loss (Vcc = 26 Vdc, Po u t = 45 W, lC Q = 250 mA, f = 2 GHz) Rtn Loss 10


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MOTOROLA POWER TRANSISTOR

Abstract:
Text: introduced in recent years to the semiconductor industry was that of the "epitaxial" mesa transistor . The , epitaxially grown mesa transistor results from a process combining the inherent mesa transistor advantages of high frequency cutoff and rugged physical structure with the alloy transistor advantage of low , to obtain a high voltage rating, but adds little to saturation resistance of the transistor . This , frequency limits of the transistor . Furthermore, the physical area of the emitter may be reduced, since


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NEC 2561

Abstract:
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a , , tele-communication, and such. FEATURES · Low distortion IM2 = 59 dBTYP. @V ce = 10 V, lc = 50 mA IM3 = 82 dBTYP. @V ce = 10 V, lc = 50 mA · · Low noise NF = 1.5 dB TYP. @Vce = 10 V, gain-improved on the 2SC3356 lc , Storage Tem perature Sym bol VcBO VcEO V lc ebo Rating 30 15 3.0 250 2.0 150 - 6 5 t o +150 Unit V


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PDF 2SC5337 2SC5337 2SC3356 NEC 2561 NEC 2561 transistor 2561 nec transistor NEC 2561 NEC D 809 F NEC 2561 h NEC semiconductor 2561 2561 a nec nec 2561 4 pin transistor NEC D 586
2012 - MGDS

Abstract:
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1 500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065 MGDS 9k270 FGDS-20A-50V/
2012 - MGDM-200

Abstract:
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065 s6718 FGDS-20A-50V MGDS-200-H-F
2011 - MIL-STD-461C Part 9, CE 03, RE 02, RS 03

Abstract:
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065 MIL-STD-461C Part 9, CE 03, RE 02, RS 03
2011 - FGDS-20A-50V

Abstract:
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065 FGDS-20A-50V MGDS-200-H-F
2012 - Not Available

Abstract:
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065
2012 - Not Available

Abstract:
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065
2011 - Not Available

Abstract:
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 9-45 Vdc , €¢ Galvanic isolation 1.500 VDC 1-General • Integrated LC filter • Synchronizable • Load sharing , models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The series include , additionnal external components. All modules are designed with LC network filters to minimize reflected


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F FC10-065
TELEFUNKEN EL 156

Abstract:
Text: handling. M Silicon NPN Planar RF Transistor Applications For low-noise and high-gain broadband , consumption · 50 Q input impedance at 945 MHz 2 1 EL LI L I 13 653 Low noise figure High power gain 3 , Zs = Zs0pt, f = 450 MHz, V ce = 2 V, Ic = 0.5 mA Power gain V c e = 3 V, Ic = 1 mA, f = 945 MHz VCE = 2 V, Ic = 1.5 mA, f = 945 MHz VCE = 2 V, Ic = 0.5 mA, f = 450 MHz Collector current for fp max VCE = 2 V, f = 500 MHz Real part of input impedance VCE = 3 V, Ic = 1 mA, f = 945 MHz V ce = 2 V, Ic = 1.5


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PDF S822TW D-74025 07-Nov-97 TELEFUNKEN EL 156
2009 - BFR182

Abstract:
Text: SAW-resonator and allows for a simple design with only a few components besides the transistor and , transition frequency fT of the transistor should be several Gigahertz in order to ensure oscillator start-up. However, using a transistor with too high of a fT will also increase the harmonic levels, and therefore it , frequency decreases. Thus, it appears that using Infineon's RF transistor BFR182 with a transition , flicker noise of the transistor itself but also on the flicker noise and loaded Q-factor of the


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carbon resistors

Abstract:
Text: TRANSISTOR N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b , transistor bte d ■^53^31 odbtss4 ô1e blx13c iapx A CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; lc = 10 mA V(BR)CES > 65 V Collector-emitter , ; Vce = 5 V hFE typ. 50 10 to 100 D.C. current gain ratio of matched devices * lc = 1,25 A;VCE = 5V


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PDF e3lx13u 7Z77838 BLX13U BLX13C carbon resistors BLX13 A1E transistor carbon resistor philips carbon film resistor Philips Carbon Resistor RF amplifiers in the HF and VHF
lc 945 p transistor NPN TO 92

Abstract:
Text: TYPE [ I BLX96 JL U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposes and transmitters , reliability. The transistor has a "/" capstan envelope with a moulded cap. All leads are isolated from the , voltage RBE = 10 £3; lc = 5 mA open base; Iq = 5 mA Emitter -base voltage open collector; Ig = 1 mA Saturation voltage Ic = 200 mA; IB = 20 mA D.C. current gain Ic = 200 mA; VCE = 20 V lc = 400 mA; VCE = 20 V


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PDF 0G14D10 BLX96 lc 945 p transistor NPN TO 92 BLX96 blx96a IEC134 lc 945 p transistor s3 vision
transistor LC 945

Abstract:
Text: . M Silicon NPN Planar RF Transistor Applications For low-noise and high-gain broadband , consumption · 50 Q input impedance at 945 MHz 1 Low noise figure High power gain n d - U 13fi32 , , Ic = 1 mA, f = 945 MHz VCE = 2 V, Ic = 1.5 mA, f = 945 MHz VCE = 2 V, Ic = 0.5 mA, f = 450 MHz Collector current for fp max VCE= 2V ,f= 5 0 0 MHz Real part of input impedance VCE -3 V, f = 945 MHz, Ic = 1 mA VCe = 2 V, f = 945 MHz, Ic = 1.5 mA fs = disturbance signal, f^ = useful signal Symbol 111


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PDF S852TW 13fi32 D-74025 07-Nov-97 transistor LC 945
2011 - thermaflo

Abstract:
Text: Metallic case - 1.500 VDC Isolation · Ultra wide input range 16-80 Vdc, 9-45 Vdc · 28Vdc input compliant , VDC · Integrated LC EMI filter · Synchronizable · Fully protected by independant security · Under & , ultra wide input voltage range of 9-45 , 16-80 volts. The series include single output voltage choices of , external source frequency. All the modules are designed with LC network filters to minimize reflected input , : 9-45 VDC O : 16-80 VDC B C E F I J Output : : : : : : 3.3 VDC 5 VDC 12 VDC 15 VDC 24 VDC 28 VDC


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PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 thermaflo
2011 - Not Available

Abstract:
Text: Metallic case - 1.500 VDC Isolation · Ultra wide input range 16-80 Vdc, 9-45 Vdc · 28Vdc input compliant , VDC · Integrated LC EMI filter · Synchronizable · Fully protected by independant security · Under & , ultra wide input voltage range of 9-45 , 16-80 volts. The series include single output voltage choices of , external source frequency. All the modules are designed with LC network filters to minimize reflected input , : 9-45 VDC O : 16-80 VDC B C E F I J Output : : : : : : 3.3 VDC 5 VDC 12 VDC 15 VDC 24 VDC 28 VDC


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PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032
2009 - 5cw2

Abstract:
Text: Metallic case - 1.500 VDC Isolation · Ultra wide input range 16-80 Vdc, 9-45 Vdc · 28Vdc input compliant , VDC · Integrated LC EMI filter · Synchronizable · Fully protected by independant security · Under & , ultra wide input voltage range of 9-45 , 16-80 volts. The series include single output voltage choices of , external source frequency. All the modules are designed with LC network filters to minimize reflected input , MGDS - 75 input output / option Input Voltage Range Permanent H : 9-45 VDC O : 16-80 VDC B C E


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PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 5cw2 bergquist ultra soft GAIA MGDS-75-H-E SIL-PAD density
2010 - MGDS-75

Abstract:
Text: Metallic case - 1.500 VDC Isolation · Ultra wide input range 16-80 Vdc, 9-45 Vdc · 28Vdc input compliant , VDC · Integrated LC EMI filter · Synchronizable · Fully protected by independant security · Under & , ultra wide input voltage range of 9-45 , 16-80 volts. The series include single output voltage choices of , external source frequency. All the modules are designed with LC network filters to minimize reflected input , : 9-45 VDC O : 16-80 VDC B C E F I J Output : : : : : : 3.3 VDC 5 VDC 12 VDC 15 VDC 24 VDC 28 VDC


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PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 MGDS-75 bergquist ultra soft FC03 MGDS-75-H-C MGDS-75-H-J SIL-PAD density
2006 - MGDS-75-H-E

Abstract:
Text: Metallic case - 1.500 VDC Isolation · Ultra wide input range 16-80 Vdc, 9-45 Vdc · 28Vdc input , isolation 1.500 VDC · Integrated LC EMI filter · Synchronizable · Fully protected by independant security , available with ultra wide input voltage range of 9-45 , 16-80 volts. The series include single output , frequency or an external source frequency. All the modules are designed with LC network filters to , : 9-45 VDC O : 16-80 VDC Output B C E F I J : : : : : : REDEFINING THE SOURCE OF


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PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 MGDS-75-H-E MGDS-75-O-E MGDS-75-H-C MGDS-75-H-J thermaflo 424800B0000 MGDS-75-H-F MGDS-75-O-B MGDS-75-O-I GAIA MGDS-75-H-E
2010 - MGDS-75-H-C

Abstract:
Text: Metallic case - 1.500 VDC Isolation · Ultra wide input range 16-80 Vdc, 9-45 Vdc · 28Vdc input compliant , VDC · Integrated LC EMI filter · Synchronizable · Fully protected by independant security · Under & , ultra wide input voltage range of 9-45 , 16-80 volts. The series include single output voltage choices of , external source frequency. All the modules are designed with LC network filters to minimize reflected input , : 9-45 VDC O : 16-80 VDC B C E F I J Output : : : : : : 3.3 VDC 5 VDC 12 VDC 15 VDC 24 VDC 28 VDC


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PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 MGDS-75-H-C FC03 MGDS-75-H-E MGDS-75 MGDS-75-O-I MGDS-75-O-E MGDS-75-H-J bergquist ultra soft v0 MGDS-75-H BH Re transistor
2006 - FC03

Abstract:
Text: Metallic case - 1.500 VDC Isolation • Ultra wide input range 16-80 Vdc, 9-45 Vdc • 28Vdc input , isolation 1.500 VDC • Integrated LC EMI filter • Synchronizable • Fully protected by independant , models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The series include single , to one frequency or an external source frequency. All the modules are designed with LC network , : 9-45 VDC O : 16-80 VDC Output B C E F I J : : : : : : REDEFINING THE SOURCE OF


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PDF MGDM-75 28Vdc MIL-STD-704A/D/F MGDM-75 FC03-032 FC03 MGDS-75-H-B
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