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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

lc 945 p transistor Datasheets Context Search

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lc 945 p transistor

Abstract: No abstract text available
Text: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low , Low supply voltage Low current consumption 50 Q input impedance at 945 MHz 1 1 · · Low noise figure


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PDF S852T/S852TW S852T S852TW 20-Jan-99 lc 945 p transistor
lc 945 p transistor

Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
Text: Zs = ZSopt, f = 945 MHz, V CE = 3 V, lc = 1 mA Zs = Zsopt, f = 945 MHz, V CE = 2 V, lc = 1.5 mA Power gain VCE = Vce = Vce = V ce = 2 3 2 2 V, V, V, V, lc = 0.5 mA, f = 450MHz lc = 1 mA, f = 945 MHz lc = , 945 MHz V ce = 2 V, lc = 1.5 mA, f = 945 MHz lc RS(h11e) Re(h11e) www.vishay.de · FaxBack , Figure 3. C o lle cto r Base C a p a cita n ce vs. C o lle cto r Base Voltage 13620 lc - Collector , Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low


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PDF S822T/S822TW S822T S822TW 20-Jan-99 lc 945 p transistor transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
lc 945 p transistor NPN TO 92

Abstract: lc 945 p transistor lc 945 transistor lc 945 p transistor NPN
Text: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 , Breakdown Voltage E to B DC Current Gain Tested) ERICSSON ^ Conditions Ib = 0 A, lc = 5 mA V Be = 0 V, lc = 5 mA |c = 0 A, Ie = 5 mA V CE = 5 V, lc = 1.5 A Symbol V(BR)CEO V (BR)CES V(BR)EBO hFE Min 28 55 3.5 20 Typ 32 70 5 50 Max - - - Units Volts Volts Volts - 120 R F S p


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lc 945 p transistor NPN TO 92

Abstract: No abstract text available
Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz , Rejc 9-45 PTB 20230 Electrical Characteristics Characteristic Breakdown Voltage C to E , Vbe = 0 V, lc = 100 mA Ib = 0A , lc = 100 mA, lc = 0 A, le = 5 mA Vce = 5 V, lc = 1 A R Be Symbol , GHz) G pe Gain Compression (Vcc = 26 Vdc, Ic q = 250 mA, f = 2 GHz) P -1dB 45 Watts


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NEC 2561

Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F NEC semiconductor 2561 2561 a nec nec 2561 4 pin transistor NEC D 586
Text: e = 10 V, lc = 50 mA, f = 1 G H z TM Vce = 10 V, lc = 50 mA, Rs = RL = 75 Q . P in MIN. TYP , PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a , , tele-communication, and such. FEATURES · Low distortion IM2 = 59 dBTYP. @V ce = 10 V, lc = 50 mA IM3 = 82 dBTYP. @V ce = 10 V, lc = 50 mA · · Low noise NF = 1.5 dB TYP. @Vce = 10 V, gain-improved on the 2SC3356 lc


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PDF 2SC5337 2SC5337 2SC3356 NEC 2561 NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F NEC semiconductor 2561 2561 a nec nec 2561 4 pin transistor NEC D 586
2009 - BFR182

Abstract: lc resonator SAW-RESONATOR
Text: A p p l i c a t i o n N o t e , R e v . 2 . 0 , F e b . 2 00 7 A p p li c a t i o n N o t e N o , e m u s i n g B F R 1 8 2 R F B i p ol a r T r a ns i s t o r R F & P r o t e c ti o n D e v i c , SAW-resonator and allows for a simple design with only a few components besides the transistor and , transition frequency fT of the transistor should be several Gigahertz in order to ensure oscillator start-up. However, using a transistor with too high of a fT will also increase the harmonic levels, and therefore it


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MOTOROLA POWER TRANSISTOR

Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 2N1358 JAN 2N398A 1N2621A
Text: 60 35 5 P . TJ BVcbo BVCES lc hKE @ lc Type Case watts °C volts volts amps min max amps , introduced in recent years to the semiconductor industry was that of the "epitaxial" mesa transistor . The , epitaxially grown mesa transistor results from a process combining the inherent mesa transistor advantages of high frequency cutoff and rugged physical structure with the alloy transistor advantage of low , to obtain a high voltage rating, but adds little to saturation resistance of the transistor . This


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lc 945 p transistor NPN TO 92

Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision
Text: TYPE [ I BLX96 JL U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposes and transmitters , reliability. The transistor has a "/" capstan envelope with a moulded cap. All leads are isolated from the , "c mA Th °C a. &3. P * ro sync W GP dB class-A class-A 860 860 25 25 250 250 25 25 -60 -60 > 0,5 , voltage RBE = 10 £3; lc = 5 mA open base; Iq = 5 mA Emitter -base voltage open collector; Ig = 1 mA


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PDF 0G14D10 BLX96 lc 945 p transistor NPN TO 92 BLX96 blx96a IEC134 lc 945 p transistor s3 vision
2012 - MGDS

Abstract: 9k270 FGDS-20A-50V/
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1 500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065 MGDS 9k270 FGDS-20A-50V/
2012 - s6718

Abstract: MGDM-200 FGDS-20A-50V MGDS-200-H-F
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065 s6718 FGDS-20A-50V MGDS-200-H-F
Not Available

Abstract: No abstract text available
Text: P S / D I S C R E T E 86D 0 1 8 5 6 U .H .F . linear power transistor APPLICATIO MINFORMATION , D 01852 ■BLX96 _Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u .h .f. amplifiers for television transposers , ensures excellent reliability. The transistor has a ' *" / capstan envelope with a moulded cap. A , 860 mode of operation 25 25 250 250 25 25 -60 -60 P r o sync * w


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PDF BLX96 7ZH737 bbS3T31 -16dB)
2011 - MIL-STD-461C Part 9, CE 03, RE 02, RS 03

Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065 MIL-STD-461C Part 9, CE 03, RE 02, RS 03
2011 - MGDS-200-H-F

Abstract: FGDS-20A-50V
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065 MGDS-200-H-F FGDS-20A-50V
2012 - Not Available

Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065
2012 - Not Available

Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation · Ultra wide input range 9-45 Vdc, 16-80 , Integrated LC filter · Synchronizable · Load sharing, N+1 redundancy · No load to full load operation · Fully , density. Standard models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The , external components. All modules are designed with LC network filters to minimize reflected input current


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F MGDM-200 FC10-065
2011 - Not Available

Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-200 : 200W POWER Hi-Rel Grade 5:1 Low Input Voltage : 9-45 & 16-80 VDC Single Output Metallic case - 1.500 VDC Isolation • Ultra wide input range 9-45 Vdc , €¢ Galvanic isolation 1.500 VDC 1-General • Integrated LC filter • Synchronizable • Load sharing , models are available with ultra wide input voltage range of 9-45 , 16-80 volts. The series include , additionnal external components. All modules are designed with LC network filters to minimize reflected


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PDF MGDM-200 28Vdc MIL-STD-704A/D/F FC10-065
IF444

Abstract: SGSF544
Text: 7 G i537 DGSTlflT Q )2c SGS-THOMSON L i([O T ® O iD D © i P 23.- o SG SF344/IF344 SG , metal TO-3 packages. SGS P a ra m e te r F 3 4 4 | IF 3 4 4 U n it F444 IF 4 4 4 F544 , 0) 600 V V ebo Emitter - Base Voltage ( lc = 0) 7 V lc lew V Collector , Emitter Cutoff Current ( lc Il Iebo 200 m a 2 mA 1 O o < Collector Cutoff , m m (V b e Vce < m 0 Ic e s T e s t C o n d itio n s P a r a m e te r Collector


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PDF SF344/IF344 SF444/IF444/F544 50kHz 500ms IF444 SGSF544
10TPB68MC

Abstract: 6TPB100MA 10TPB330M 10TPB33M TPC Series 6TPC100M 10TPC100M 8TPB47M 4TPB680M 6TPB330ML 2R5TPC330M
Text: . 1.5 times the initial value L.C . 105,2000h, rated voltage applied) The initial value , D.F. 1.5 times the initial value L.C . applied) 3 times the initial value C/C Surge 105,1000 cycles, 1k,Surge Within±5 of the initial value D.F. The initial value L.C , TPC Series Characteristics list Rated Voltage V Rated Capacitance F D.F. %max. L.C . A , 63.0 45 1700 6TPC150M 6.3 150 10.0 94.5 40 1900 4TPC150M 4.0 150


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PDF range120Hz/20 120Hz/20 100kHz/20 ratio100kHz/20 Z/Z20 100kHz 10TPA33M 10TPB68MC 6TPB100MA 10TPB330M 10TPB33M TPC Series 6TPC100M 10TPC100M 8TPB47M 4TPB680M 6TPB330ML 2R5TPC330M
Not Available

Abstract: No abstract text available
Text: OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION P o u t = 30 W MIN. WITH 7.5 dB , transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base , VcEO Collector-Emitter Voltage 25 V V ebo Collector-Supply Voltage 3.5 V P diss Power Dissipation 88 w lc Device Current 7.5 A Tj Junction Temperature 200 , BVcbo lc = 100 mA 48 55 — V BVebo Ie = 10 mA 3.5 5 — V BVceo


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PDF SD4017 SD4017
nec hf 324

Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R DESCRIPTION The 2SC5338 is designed for a , Published April 1996 P Printed in Japan © NEC Corporation 1996 NEC ELECTRICAL CHARACTERISTICS (TA , , MIN. TYP. MAX. 1.5 1.5 Unit fiA HA Ie = 0 = 2 V, lc = 0 hF E fT Cre |S2i e|2 NF im 2 Vce Vce V cb V ce V ce = 5 V, lc 5 V, lc = 50 mAN ote2 50 mA = 50 6.0


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PDF 2SC5338 2SC5338 2SC4703 nec hf 324 transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 transistor lc 7822 c
transistor C946

Abstract: No abstract text available
Text: PD - 9.1114 International [^Rectifier IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH , capability. TO-247AC Absolute Maximum Ratings Parameter V ces lc @ Tc = 25°C lc @ Tc = 100°C ICM Ilm I f @ TC = 1 00 °C Ifm tsc V ge PD @ T c = 25°C P d @ T c = 100°C Tj T stg , €” 6(0.21) Weight Units °c/w 40 — g (o z) Revision 2 C- 945 4Û5S452 0020735 , ge = 0V, lc = 1.0mA 2.1 3.2 2.8 — 2.5 — lc = 25A, T j = 150°C — 5.5


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PDF IRGPC40KD2 -10ns C-951 O-247AC C-952 transistor C946
TNCA0J336MTRF

Abstract: TNCB1A336MTRF TNCB1A476MTRF hitachi TNC TNCUB0J476MTRXF TNCB1A476 TNCA1A336MTRXF TNCB1A226MTRF TNCB0G227MTRZF TNCB0J107MTRF
Text: LC 10 1A J, P P ,A A A A A,UB,B A,UB,B UB,B 0.1CV or 0.3CV C/C +30% ~ -20% or less , 120Hz Outline of drawings and dimensions Anode indication belt mark J case P case ESR (100kHz) A , J and P case. A, B, UB case Case code J P A B UB L 1.6±0.1 2.0±0.2 3.2±0.2 , 7002190mArmsMAX C/C ±20% or less Surge withstanding tan Specified initial value or less voltage LC 0.1CV , case Maximum permissible P case ripple current A case (100kHz,20°C) UB case B case L (Unit


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PDF C5101-1 120Hz 120ase TNCA0J336MTRF TNCB1A336MTRF TNCB1A476MTRF hitachi TNC TNCUB0J476MTRXF TNCB1A476 TNCA1A336MTRXF TNCB1A226MTRF TNCB0G227MTRZF TNCB0J107MTRF
2008 - Not Available

Abstract: No abstract text available
Text: characteristics in each stage. LC Rated voltage (V.DC) 4 6.3 0G 0J J, P J, P ,A P ,A J, P ,A P ,A P ,A A , 63.0 63.0 63.0 94.5 B B B B J P P A A P P A A A A B A A B A A UB UB B B , 120Hz L H ※Please see each page of TMCJ and TMCP, about details information of J and P case. a A, B, UB case Dimensions Case code J P A B UB L 1.6±0.1 2.0±0.2 3.2±0.2 , 700∼1650mArmsMAX C/C ±20% or less Surge withstanding tanδ Specified initial value or less voltage LC â


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PDF C5101-1 120Hz
2008 - Not Available

Abstract: No abstract text available
Text: 2006-10-15 0603 ESD Suppressor " LC " A Mechanische Abmessungen / dimensions : SIZE SISE 0201 0402 0603 , D-74638 Waldenburg · Max-Eyth-Straße 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400 http://www.we-online.com PAGE/SEITE 1 - TO/VON 4 Spezifikation für , : description : 823 56 120 050 SMD size: 0603 0603 ESD Suppressor " LC " C Lötpad / soldering spec , Max-Eyth-Straße 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400 http


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PDF D-74638
2008 - Not Available

Abstract: No abstract text available
Text: 2006-10-15 0603 ESD Suppressor " LC " A Mechanische Abmessungen / dimensions : SIZE SISE 0201 0402 0603 , D-74638 Waldenburg · Max-Eyth-Straße 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400 http://www.we-online.com PAGE/SEITE 1 - TO/VON 4 Spezifikation für , : description : 823 56 240 030 SMD size: 0603 0603 ESD Suppressor " LC " C Lötpad / soldering spec , Max-Eyth-Straße 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400 http


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PDF D-74638
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