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Part Manufacturer Description Datasheet Download Buy Part
HS1-201HSRH-8 Intersil Corporation QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, CDIP16, ROHS COMPLIANT, SIDE BRAZED, CERAMIC, DIP-16
HS1-201HSRH-Q Intersil Corporation QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, CDIP16, ROHS COMPLIANT, SIDE BRAZED, CERAMIC, DIP-16
ADS1201U Texas Instruments High Dynamic Range Delta-Sigma Modulator 16-SOIC -40 to 85
MSC1201Y2RHHT Texas Instruments 8-BIT, FLASH, 33MHz, MICROCONTROLLER, PQCC36, GREEN, PLASTIC, QFN-36
PTH12010WAH Texas Instruments 1.2 to 5.5 V 12-A, 12-V Input Non-Isolated Wide-Adjust Module 10-Through-Hole Module -40 to 85
PTV12010WAH Texas Instruments 1.2 to 5.5-V 8-A, 12-V Input Non-Isolated Wide-Adjust SIP Module 8-SIP MODULE -40 to 85

la 1201 sanyo Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DL-4146-101

Abstract: laser diode 405nm 650nm laser diode 200mw DL-6147-040 DL-4146-101S Laser diode 532nm 50mW 405nm 5mW laser diode DL-8141-002 DL-3147-260 DL-4146-301
Text: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division , Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division 5-318,Tachikawa-cho , ://www.sanyo-photonics.com C 2007 SANYO Printed in Japan 2007.11 IM 2k Laser Line-up for Industrial Use SANYO Laser , Stimulated Emission of Radiation". SANYO laser diode structure and basic element structure are listed below , (17.5) 22.5 1.2±0.1 3.9±0.5 0.25 Laser Diode Series 1 2 3 2.0 5.6mm can 1 : 90


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a 1201 sanyo

Abstract: transistor Bc 313 NF 28 la 1201 sanyo 2SK493 DDD3710 QQOS411 n1cj
Text: .5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 JIS , SANYO SEMICONDUCTOR CORP 12E D J 7Tc1707ki 0005410 3 ©1406A Use • Video Camera Features « Large , , f= 1kHz :The 2SK493 is classified by loss as follows (unit: mA): | 5.0 F 12.01 10.0 G 24.0 | 16.0 H 38.0 Case Outline 2005A (unit: mm) 2.0. Ojtt JEDEC: TO-92 EIAJ ! SC-43 SANYO : NP 6027KI/N283KI, TS «No. 1406-1/3 1749 SANYO SEMICONDUCTOR CORP " 1EE » J TTITOTb QQOS411 2SK493_<£5" ID - VDS IP - VPS 04 0.8


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PDF 7Tc1707ki 100juA a 1201 sanyo transistor Bc 313 NF 28 la 1201 sanyo 2SK493 DDD3710 QQOS411 n1cj
la 1201 sanyo

Abstract: No abstract text available
Text: : Cathode 3 : Anode n n rtr Specifications 3.8nom Absolute Maximum Ratings Param eter SANYO , ) ' Li 0.05 Cmin N ote)* : C apacitance value o f one diode ■Any and all SANYO , m aterial damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. ■SANYO assumes no responsibility for , specifications of any and all SANYO products described or contained herein. SANYO Electric Co.fLtd


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PDF ENN698D SVC202SPA SVC202SPA] la 1201 sanyo
la 1201 sanyo

Abstract: 3SK107 3SK107 e V02s4 LI 1806 E 151 R
Text: " B: Base C: Collector E: Emitter SANYO : T0126LP Case Outline—[2050] unit:mm 1EE D g 7c] ,  SANYO SEMICONDUCTOR CORP 15E D J 7c]c]707b 00054^7 T Use • PM tuners and VHF tuners , 24.0 Case Outline 2031A (unitrmm) 'n Gli Cat«I S t Sourc« D I Or«in C21 Citt3 SANYO : DP4A , =4-0V Drain-source voltage,Vos - V 1807 SANYO SEMICONDUCTOR CORP 3SKÌ07 ~ 1EE D J 7Tì707ti DDQSmal'dl T'Sh a , \ \ \ v \ s la 04 .»•0


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PDF CutoBH81 0DGB752 la 1201 sanyo 3SK107 3SK107 e V02s4 LI 1806 E 151 R
2SK922

Abstract: mos fet 120v 10A 2SC4293 2SC4294 fet Marking M3
Text: .5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 JIS , SANYO SLHICONDUtTOK ©2SC4293 Silicon Transistor Vary High-Definition Color Display Horizontal Deflection Output Applications • SANYO : T03PML package • Fast speed • High breakdown voltage • High , Deflection Output Applications • SANYO : T03PML package • Fast speed • High breakdown voltage â , 300ns max. S32SD2002 Silicon Transistor Horizontal Deflection Output Applications • SANYO : T03PML


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PDF 2SC4293 T03PML 300ns 2SC4294 S32SD2002 0DGB752 2SK922 mos fet 120v 10A fet Marking M3
D1801

Abstract: la 1201 sanyo 2112-B transistor 2SB1201 2112b 7C01 21124- 4 2SD1801 2SB1201 2044B
Text: : Emitter 4 : Collector SANYO : TP 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg. 1-10.1 Chome , preceding page. min typ max unit B-E Saturation Voltage VßE(sat) Ic = (-) lA ,IB = (-)50mA (-)0.9 ( â , €¢04 2S B vc^ 1201 = - 2 V / / / /i / /l/r ly ^ VI' •b j / vJy 1000 , responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors


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PDF 2112B 2SB1201/2SD1801 2SB1201/2SD1801-used 2SB1201 D1801 la 1201 sanyo 2112-B transistor 2SB1201 2112b 7C01 21124- 4 2SD1801 2SB1201 2044B
2sc284

Abstract: 2SC2840 TRANSISTOR sanyo marking 2sc2999 2SC2999 10mmiS sanyo 2033 bc 207 npn
Text:  SANYO SEMICONDUCTOR CORP * 2SC2840 -lac i) I 711707t ooomaa a 2033 NPN Epitaxial Planar , -15.0-» \t~ - li- — • - X B: Base C: Collector E: Emitter SANYO : SPA 0.4 The , where you are planning to use the 2SC2840. _3127KI/3155MW,TS No.796-1/4 522 1 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case , JEDEC: TO-92 EIAJ : SC-4 3 SANYO : NP "8 -B-C Of 4.0-1 B. Base C. Collector E. Emitter Case


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PDF 2SC2840 711707t 600MHz 0DGB752 2sc284 2SC2840 TRANSISTOR sanyo marking 2sc2999 2SC2999 10mmiS sanyo 2033 bc 207 npn
2SK283

Abstract: STK282-170-E sanyo DDD3710 ss 7941 1501T
Text: .5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 JIS , t-, 0-0.1 1.0.8-—1.1 — : Gate : Source : Drain SANYO : CP The 2SK283 is scheduled to be discontinued soon. 6027KI/3075MW,TS No.794-1/3 1701 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated below. • All , 11 ■«-5.0—» t-0.45 <-14.0 -► 0.44 JEDEC: TO-92 EIAJ : SC-4 3 SANYO : NP "8 -B-C Of 4.0-1


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PDF -100/xA 0DGB752 2SK283 STK282-170-E sanyo DDD3710 ss 7941 1501T
2SD439

Abstract: 2SB559 transistor af 126 JIS G 3201
Text: .5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 JIS , SANYO SEMICONDUCTOR CORP 2SB559 2009A 1EE D J 7cH7G7b □□D3C1ÛE S PNP/npn Epitaxial Planar , /3085MY.TS No.372-1/4 321 t SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated below. • All dimensions are in mm, and , -0.45 <-14.0 -► 0.44 JEDEC: TO-92 EIAJ : SC-4 3 SANYO : NP "8 -B-C Of 4.0-1 B. Base C. Collector E. Emitter


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PDF 2SB559 2SD439 0DGB752 transistor af 126 JIS G 3201
2SD1161

Abstract: sj 2025 sj 2038 B1181 DDD3710 marking D63 N1CJ Transistor 2SD1161 la 1201 sanyo
Text: " B: Base C: Collector E: Emitter SANYO : T0126LP Case Outline—[2050] unit:mm 1EE D g 7c] , M3X0.5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 , SANYOi CP 5277KI/3045MW,TS Mo.849-1/1 1339 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated below. â , _i oo trì«i 11 ■«-5.0—» t-0.45 <-14.0 -► 0.44 JEDEC: TO-92 EIAJ : SC-4 3 SANYO


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PDF 2SD1l61-used 0DGB752 2SD1161 sj 2025 sj 2038 B1181 DDD3710 marking D63 N1CJ Transistor 2SD1161 la 1201 sanyo
2SC2813

Abstract: LC1 D63 transistor Bc 313 NF 28 2SC3142 DDD3710 EIAJ Q5270I Q5270 LC1 FH 43
Text: " B: Base C: Collector E: Emitter SANYO : T0126LP Case Outline—[2050] unit:mm 1EE D g 7c] , M3X0.5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 , : ^ o.i-i —1.1-J 0.« B: Base C: Collector E: Emitter SANYO : CP The 2SC2813 is scheduled to be , the 2SC2813. 4157KI/2173KI.TS.^No. 692-1/3 513 1 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated


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PDF 0DGB752 2SC2813 LC1 D63 transistor Bc 313 NF 28 2SC3142 DDD3710 EIAJ Q5270I Q5270 LC1 FH 43
2SK315

Abstract: DDD3710 SILICON TRANSISTOR FS 2025 2030a la 1201 sanyo
Text: .5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 JIS , SANYO SEMICONDUCTOR CORP 15E D I 71T?D7b 00053^7 b 2SK315 I 1 T-3I-2C N-Channel Junction 2040 , i Source D: Drain SANYO : SPA 'Je o.i tablent Tenperature,Ta - 6017KI/3145KI No.1005-1/4 1706 SANYO , Drain current. Id — mA 1707 SANYO SEMICONDUCTOR CORP 2SK315 crss - Vds o (TJ a 'S 0.1 VQ f , – T-3 ) _ SANYO SEMICONDUCTOR CORP 2SK315 Input admittance,yis - VPS .iff 3 f=IOOMHz


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PDF 2SK315 1005B 0DGB752 DDD3710 SILICON TRANSISTOR FS 2025 2030a la 1201 sanyo
2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Text: SANYO SEMICONDUCTOR CORP 1EE D |^?cH7G7b 0004141 The 2SC930 has two types of packges SPA and NP , ) 2.2 1— »3— -15.0-» 1 t 14 t B : Base C: Collector E: Emitter SANYO : SPA 0.4 Case Outline 2003A (unit:mm) 2.0 . 0.« 0.« JEDEC: TO-92 EIAJ : SC-4 3 SANYO : NP OS -«-c of B, Base C , .545-1/17 480 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated below. • All dimensions are in mm, and dimensions which


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PDF 2SC930 2SC930SPA 2SC930NP 0DGB752 transistor 2SC930 2SC930NP 2SC2839 2SC930 D
2SC2271

Abstract: transistor 2SC2271 2SC3468 JIS G3141 b1111 b1252 TRANSISTOR
Text:  SANYO SEMICONDUCTOR CORP 2SC2271 I 13E DJ7T17D71, QOD41S7 ij" T-3I-Ä3 2006A NPN Triple , 2006A (unit:mm) SANYO I MP The 2SC2271 is scheduled to be discontinued soon. Use the 2SC3468, instead , .493-1/2 496 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated below. • All dimensions are in mm, and , «-5.0—» t-0.45 <-14.0 -► 0.44 JEDEC: TO-92 EIAJ : SC-4 3 SANYO : NP "8 -B-C Of 4.0-1 B. Base C


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PDF 2SC2271 DJ7T17D71, QOD41S7 0DGB752 2SC2271 transistor 2SC2271 2SC3468 JIS G3141 b1111 b1252 TRANSISTOR
ICL 2025

Abstract: la 1201 sanyo TO-220AA SILICON TRANSISTOR FS 2025 TRANSISTOR FS 2025 TDK SC45 B1181 AKO 450 i52 marking 50UH
Text: " B: Base C: Collector E: Emitter SANYO : T0126LP Case Outline—[2050] unit:mm 1EE D g 7c] ,  SANYO SEMICONDUCTOR CORP 2SC3085 2017 ©1055A Features . High breakdown voltage(VCB0 , :Emitter B.Base 4207KI/2125MW.TS No.1055-1/3 592 SANYO SEMICONDUCTOR CORP Turn-ON Time Storage Time , hFE - Iç « h a u u 3 O O o c > io S g " ¤ Ut? o m +3 Ol S Sì •gl "o t o> * Collector , Current,Ig - A 593 i SANYO SEMICONDUCTOR CORP 2sc3085 12 E D |"?Tì7G7t, DOOMESS 1 T-33-/S-' H S


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PDF 2SC3085 D004SSB 300U3, Cycleg10j{ 0DGB752 ICL 2025 la 1201 sanyo TO-220AA SILICON TRANSISTOR FS 2025 TRANSISTOR FS 2025 TDK SC45 B1181 AKO 450 i52 marking 50UH
2SA1210

Abstract: 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536
Text:  SANYO SEMICONDUCTOR CORP 2SC2912 1SE D J 7c]c]707Li ODDint -7^33-07 2009A NPN/pnp Epitaxial , . 780-1/3 535 SANYO SEMICONDUCTOR CORP 2SC2912/2SA1210 1SE D I 7cn?D7t, QOGmi? 2 "P33-07 -140 , O.AmN Q.3n lA -L Q.2mJ r I 1 0.1 oA -1- IB = 0 140 120 < b , > \ \ 2£ vc «2 E = ?I2 = I0V 2 10 7 >00 2 Collector current, Ic — mA 1 SANYO , SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo


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PDF 2SC2912 707Li 2SA1210 Characteristics/H81 B1252 0DGB752 2SA1210 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536
TRANSISTOR FS 2025

Abstract: SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
Text:  SANYO SEMICONDUCTOR CORP 2SK775 1EE D J ?c]cì?Q7t. □QDS4S,:i □ T-3T-U 2052A N-Channel , a SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated below. • All dimensions are in mm, and dimensions , -0.45 <-14.0 -► 0.44 JEDEC: TO-92 EIAJ : SC-4 3 SANYO : NP "8 -B-C Of 4.0-1 B. Base C. Collector E. Emitter Case Outline—[2004A] unit:mm JEDEC: TO-9 2 EI AJ : SC-43 SANYO : Hr Collector Emitter Base


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PDF 2SK775 0DGB752 TRANSISTOR FS 2025 SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
d331 npn transistor

Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Text:  SANYO SEMICONDUCTOR CORP 2SD330, 331 2SB514, 515 ©397d 201 OA 2012 15E D I TWOTb Q004T05 , ,Ic=0 (-)i.o mA DC Current Gain hFE(l) Vce= (-)2V,Ic=(-) 1A 40* 320* hFE(2) VCE= (-)2V,Ic=(-)0. lA , 2SB515/D331. 3257AT/7193KI,TS No.397-1/3 1242 SANYO SEMICONDUCTOR CORP 2SD330.33Ì/2SB514.515 1c - , „¢=5V_ ai 1.0 s Collector Current,le - A Collector Current,Ic - A 1243 SANYO SEMICONDUCTOR CORP , ,Vce - V 1244 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS


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PDF 2SD330, 2SB514, Q004T05 2SB514 DissipatioBH81 0DGB752 d331 npn transistor D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
2SC693

Abstract: sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
Text:  SANYO SEMICONDUCTOR CORP 2SC693 12E D J 7cici7D?b DÜD414D t> 2003A NPN Pianar Silicon , -«-5.0—» 4-—r t-o.« «—w.o.—»1 0.« JEDEC: TO-92 EIAJ : SC-43 SANYO ! NP 00 -►C B. Base C , SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo , 0.44 JEDEC: TO-92 EIAJ : SC-4 3 SANYO : NP "8 -B-C Of 4.0-1 B. Base C. Collector E. Emitter Case Outline—[2004A] unit:mm JEDEC: TO-9 2 EI AJ : SC-43 SANYO : Hr Collector Emitter Base Case Outline


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PDF 2SC693 D414D 0DGB752 2SC693 sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
2SC2228Y

Abstract: 2228Y vt900 MARKING .40AA pa 2030a 2SC2228A 2SC3467 60AA
Text:  SANYO SEMICONDUCTOR CORP 2SC2228A, 2228Y I 12E D J 7^7D7t. ODD41S4 T-3I-03 2006A NPN Triple , as follows: »0 C 80 60 D 120 100 E 200 160 F 320 Case Outline (unit:mm) 2006A 3.0 n t ?T -8.5—► «-w.o-J 0.5 EIAJl SC-51 SANYO I MP Bi Base Ci Collector Ei Emitter The 2SC2228A, 2228V are , where you are planning to use the 2SC2228A, 2228Y. 4147KI/3195MW.TS No.665-1/3 493 SANYO , Colleotor to Base Voltage,VCB - V 494 SANYO SEMICONDUCTOR CORP 15E D J 7WD7b, □□□415t, Tp 2SC2228A


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PDF 2SC2228A, 2228Y ODD41S4 T-3I-03 2SC2228A 2SC2228Y CurrBH81 0DGB752 2228Y vt900 MARKING .40AA pa 2030a 2SC3467 60AA
2SK687

Abstract: DDD3710
Text: : Emitter SANYO : T0126LP Case Outline—[2050] unit:mm 1EE D g 7c] ¬7D7k] □□□37EG — T-ft-cio 1 an , I SANYO SEMICONDUCTOR CORP 2SK687 2052A IE E D J 7^707^ QOaS44b S T~VMl N-Channel MOS Silicon , Test Circuit Vout Case Outline 2052A JEDEC: TO-220AB EIAJ; SC-46 3267TA.TS No.2464-1/2 1785 I SANYO , VS -> €”- V b lafs- s s s - Drain to Source Voltage,VDS - V 100 1786 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE


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PDF 2SK687 QOaS44b 0DGB752 DDD3710
2SA1210

Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Text: " B: Base C: Collector E: Emitter SANYO : T0126LP Case Outline—[2050] unit:mm 1EE D g 7c] , M3X0.5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 , description of the 2SC2912. 3187AT/3135KI/0193KÌ.TS <; No. 780-1/3 114 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are , -4 3 SANYO : NP "8 -B-C Of 4.0-1 B. Base C. Collector E. Emitter Case Outline—[2004A] unit:mm


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PDF 2SA1210 0DGB752 2SA1210 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
D386 transistor

Abstract: sanyo D386 a 2SD386 2SD387 2SD386A n1cj tie - 313a transistor ic1A D386 2SD387A
Text: SANYO SEMICONDUCTOR CORP 2SD386,A, 387'jA 2010A 2012 15E l> I TWOTt. ootmub d I T-33-0? NPN Triple , planning to use the 2SD387, 2SD387A. 5257KI/3155MW,TS No.424-1/2 1245 SANYO SEMICONDUCTOR CORP 12E D J , $ »j lA V \ X \ k s • ÎWL/OUUJ UU/ 2SD38ÓA.387A \ S \ ° \ ^ fill M-' m mA= Collector to Emitter Voltage,Vce - V 1246 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case


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PDF 2SD386 T-33-0? 2SD386A 2SD387 2SD387A 0DGB752 D386 transistor sanyo D386 a 2SD386A n1cj tie - 313a transistor ic1A D386
transistor 2sC2621

Abstract: 2SC262 2SC2621 DDD3710 LN 2003a 2009A bc 301 transistor
Text:  SANYO SEMICONDUCTOR CORP 12E D I 7cH7Q7b QQOm?D r-33-O? 2SC2621 2009A NPN Triple Diffused , HO C 80 60 D 120 100 E 200 typ »0» 50 Case Outline 2009A (unit:mm) max unit 1.0 uA 1.0 uA , : Emitter 41H7KI/7113KI.TS No.675-1/2 509 SANYO SEMICONDUCTOR CORP 2SC262Ì 1EE D J ?Tci7Q7ti ODOMl?! b , Collector Current,Ic - mA 20 «0 60 >0 MO 120 U0 KO Ambient Temperature,Ta - °C 510 SANYO SEMICONDUCTOR CORP 15E D | 7^707^ DQ03717 fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case


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PDF r-33-O? 2SC2621 0DGB752 transistor 2sC2621 2SC262 2SC2621 DDD3710 LN 2003a 2009A bc 301 transistor
mpc 1237

Abstract: transistor 2sd 511 transistor d325 TRANSISTOR C875 c537 transistor 2SD325 2SC693E 2SC693 2SC536D A608 k
Text: " B: Base C: Collector E: Emitter SANYO : T0126LP Case Outline—[2050] unit:mm 1EE D g 7c] , M3X0.5 60 SANYO SEMICONDUCTOR CORP Case Outline—[0013] unit:mm 3.O0( Pitch =0.5) - 12.0-1 ,  SANYO SEMICONDUCTOR CORP 12E D J imÜ7L. QGG4ûIi3 □ T^ÌS-O'P 201 oa NPN/pnp Triple , ,ie=0 IEBO VEB=(-)4V,ic=0 hFE(l) VcE=(-)2V,rc=(-) lA 40* hFE(2) Vce=(-)2V,Ic=(-)0.1A 35 fT VCE=(-)5V , /3155KI/NO.398-1/9 1233 SANYO SEMICONDUCTOR CORP 2SD325/2SB511 12E D J VTTTOTti □ □□4flcì4 2


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PDF 2sb511 Product81 0DGB752 mpc 1237 transistor 2sd 511 transistor d325 TRANSISTOR C875 c537 transistor 2SD325 2SC693E 2SC693 2SC536D A608 k
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