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EHHD024A0A41-HZ GE Critical Power DC-DC Regulated Power Supply Module
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jd 1803 IC Datasheets Context Search

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jd 1803 IC

Abstract: jd 1803 b jd 1803 JD+1803
Text: ‚3̇. Designed by SIZE A3 AT- 1803 -T-LW50-R.idw Date Checked by Date Approved by J.D . 10/26/2006 R.W. 10/26/2006 B.R. Date Drawn Date 10/26/2006 6/16/2010 AT- 1803 , . B.R. Æ2003, Projects Unlimited Inc. mA pF dBA Hz ̇C ̇C grams 2 o17.7 50 a5 3 a1


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PDF FR/2008 UL1571 2002/95/EC AT-1803-T-LW50-R AT-1803-T-LW50-R jd 1803 IC jd 1803 b jd 1803 JD+1803
JD 1803

Abstract: JD 1803 b
Text: by SIZE A3 AT- 1803 -T-LW50-R.idw Date Checked by Date Approved by J.D . 10/26/2006 R.W. 10/26/2006 B.R. Date Drawn Date 10/26/2006 6/16/2010 AT- 1803


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PDF FREQUENC6/16/2008 UL1571 2002/95/EC AT-1803-T-LW50-R AT-1803-T-LW50-R JD 1803 JD 1803 b
2003 - JD 1803

Abstract: jd 1803 data jd 1803 b n177 AT-1803-T-LW50-R JD+1803+solar
Text: AND ANGLES ARE ±3°. Designed by SIZE A3 AT- 1803 -T-LW50-R.idw Date Checked by Date Approved by J.D . 10/26/2006 R.W. 10/26/2006 B.R. Date Drawn Date 10/26/2006 6/16/2010 AT- 1803 -T-LW50-R Receiver Edition Sheet - 1/1 Projects Unlimited


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PDF UL1571 2002/95/EC AT-1803-T-LW50-R AT-1803-T-LW50-R JD 1803 jd 1803 data jd 1803 b n177 JD+1803+solar
jd 1803 4 pin

Abstract: JD 1803 jd 1803 b jd 1803 IC 4 pins jd 1803 jd 1803 data jd 1803 8 pin DIP 6/18/jd 1803 4 pin
Text: ta c t fa c to ry fo r d ic e s p e c ific a tio n s . * C o n ta c t fa c to ry fo r a v a ila b , 02 OE JD V l J E IN 2 D IP V" | T NCCE HS2 JDNC VL T O -1 0 0 IN i [ T JB D , 3 JHD3 jD V JÖID4 D IP / W ID E SO [JL 3IVL M a x im In te g ra te d P ro d u cts , _ 0.787 1.194 0.025 0.356 0.762 0.086 2.667 1.194 1.778 1.803 2.083 , 0.102 0.127 0.559 0.965 0.152


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PDF 5341/IH 10MHz 100MHz 70ns/160ns IH5341 jd 1803 4 pin JD 1803 jd 1803 b jd 1803 IC 4 pins jd 1803 jd 1803 data jd 1803 8 pin DIP 6/18/jd 1803 4 pin
1996 - JD 1803

Abstract: jd 1803 IC Maxim Integrated Products jd 1803 jd 1803 data jd 1803 4 pin jd 1803 b 4 pins jd 1803 max6315us46d4 jd 1803 b 102 marking code GW
Text: connected to the MAX6315's RESET output will connect to the supply voltage monitored at the IC 's VCC pin , . Keep in mind that as the MAX6315's V CC decreases below 1V, so does the IC 's ability to sink current , HY_ _ HZ_ _ IA_ _ IB_ _ IC _ _ ID_ _ IE_ _ IF_ _ IG_ _ IH_ _ II_ _ IJ_ _ IK_ _ IL_ _ IM , _ _ JB_ _ JC_ _ JD _ _ JE_ _ JF_ _ JG_ _ JH_ _ JI_ _ JJ_ _ JK_ _ JL_ _ JM_ _ JN_ _ JO_ _ , 0.787 0.025 0.356 0.762 0.086 2.667 1.194 1.778 1.803 2.083 0.102 1.194 0.127 0.559


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PDF OT143 100mV 140ms, 1120ms MAX811 1-0052A OT143 JD 1803 jd 1803 IC Maxim Integrated Products jd 1803 jd 1803 data jd 1803 4 pin jd 1803 b 4 pins jd 1803 max6315us46d4 jd 1803 b 102 marking code GW
jd 1803 IC

Abstract: jd 1803 b 107 JD 1803 jd 1803 4 pin jd 1803 data jd 1803 b 102 jd 1803 b jd 1803 19 B TDA7372B
Text: small current (in the range of few |xAs). When the St-BY pin is high the IC becomes fully operational. A , threshold, the I.C . will deliver the full power. Once the threshold has been reached, the device , CIRCUIT PROTECTION Figure 15: Fault (DC short) waveforms 8/10 ^7 # /= 7 SGS-ÏHOMSON (ü jD D lE IS ® [g lL IE IC n rR IS )0 9 D C S TDA7372B MULTIWATT15 PACKAGE MECHANICAL DATA DIM , 0.200 0.689 0.421 0.874 0.870 1.27 17.78 1 0.55 0.75 1.52 18.03 0.019 0.026 0.040 0.690 0.772 0.795


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PDF A7372B 4x10W MULTIWATT15 TDA7372B jd 1803 IC jd 1803 b 107 JD 1803 jd 1803 4 pin jd 1803 data jd 1803 b 102 jd 1803 b jd 1803 19 B TDA7372B
pc123y22

Abstract: gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK GP2S24BC S2S4A00F GP2Y0A21YK
Text: ES: Eric Sunderhaus, JD : Jeremy Dietz, RS: Robert Stuart PART NUMBER BS100C BS500B BS520 MKT INT JD JD JD PART DESCRIPTION / REPLACEMENT Blue Sens. PD Blue Sens. PD Blue Sens. PD , GA102T1M1MZ JD OPIC type front monitor for CD-R/RW, SMT GA102T1M1MZ GA201TXR1ZZ JD OPIC type , Marketing GL100MD0MP1 JD SMT IRED, ± 25º, 940nm, 3mW, 1.5Kpcs (Top Mount) T&R GL100MD0MP1 GL100MD1MP1 JD SMT IRED, ± 25º, 940nm, 6mW, 1.5Kpcs (Top Mount) T&R GL100MD1MP1 GL100MN0MP JD


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PDF BS100C BS500B BS520 BS100C0F BS500B0F BS520E0F GA102T1M1MZ GA201TXR1ZZ GA201TXR1ZY pc123y22 gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK GP2S24BC S2S4A00F GP2Y0A21YK
Not Available

Abstract: No abstract text available
Text: Control Data Register (MOD DR) P ro g ra m m in g P S X D e v ic e s =1004166 0001066 620 15 , D e v ic e s 'iüü m flfl QQOICHO 40^ IOB Data Register, i.e., the value of the , X D e v ic e s ^ o o m a a o o o i m 251 2 19 In addition, a special instruction shown , ra m m in g P S X D e v ic e s TODMlflfl QDD1DR4 D24 21 ■Column (decimal) 0 No SRAM , m m in g P S X D e v ic e s 'iQ Q m ô ê O DDIO 'îb ST7 4 HOW / I L2 Cells Row


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PDF PSX160, PSX128B PSX96B. has27 DDD11SG
2009 - Lithium-Ion Battery Charger 23-6

Abstract: BATTERY PROTECTION IC 12v battery overcharge protection circuit diagram Lithium-Ion Battery Charger sot 23-6 2 cell one cell battery protection ic diagram DORMANCY Lithium-Ion Battery Charger sot 23 jd sot23 C2001 marking r2 SOT23-6 MOSFET
Text: ! IC One Cell Lithium-ion/Polymer Battery Protection IC 0 JD FHI01 DESCRIPTION & FEATURES , SOT-23-6L 1 ! IC One Cell Lithium-ion/Polymer Battery Protection IC 0 JD FHI01 Pin , detector V2 ! IC One Cell Lithium-ion/Polymer Battery Protection IC 0 JD FHI01 ABSOLUTE , Battery Protection IC 0 JD FHI01 Short protection voltage VDD=3.0V Detect voltage of VVDD-1.2 VDD , 6.5 0.01µF 125 10 13 ! IC One Cell Lithium-ion/Polymer Battery Protection IC 0 JD FHI01


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PDF FHI01 FHI01 OT-23-6 Lithium-Ion Battery Charger 23-6 BATTERY PROTECTION IC 12v battery overcharge protection circuit diagram Lithium-Ion Battery Charger sot 23-6 2 cell one cell battery protection ic diagram DORMANCY Lithium-Ion Battery Charger sot 23 jd sot23 C2001 marking r2 SOT23-6 MOSFET
3w3p

Abstract: CL21
Text: (dim pled connectors are sol der or n ic k e l-p la te d ). Item Contact resistance C urrent Rating , HRS No. No. of Pin 5 7 25 27 3 Part No. JDEM -5W 1P JD A M -7W 2P JDCM -25W 3P JDCM- 27W2P JD A M A , 1 -0 0 2 8 -0 C L21 1 -0 7 8 7 -0 No. of Pin 5 7 25 3 Part No. JDEM -5W 1S JD A M -7W 2S JDCM , 25 27 JD A M F- 7W2S JDCMF- 25W3S JDCMF- 27W2S See page 52 for term inal arrangem ent and , -0054-0 C L211-0127-1 C L211-0756-7 C L211-0798-7 Part No. J D M -C P -S S JD M -C P -S S 2 JD M -C P -S S 4


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PDF
Not Available

Abstract: No abstract text available
Text: 13,82 16,9415,65 18.03 10,06 3,00 40,89 1.93 23,SD 1 .» □ P J_y- Er □ Z , l 2 X 7 R 5 0 1 — 1 D 4K N E VENKEL 0 . 1 / J F / 5 0 0 V SU R F A C E M O U NT C E R A M IC , F A C E M O U N T C ER AM IC C H IP C APA C ITO R C 16 ATC 100B 470K W 500X ATC 4 7 p F ATC 1 0 0 B S U R F A C E M O U N T C E R A M IC C H IP C APA C ITO R C 15 S K R 10D M 1JD 11 , IC C H IP CAPAC ITOR C 13 A TC 700B 102M W 50X ATC 1 O OO pF ATC 7 0 0 B S U R F A C E M


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PDF SD57045 SD57045 TSD57045
ltdo

Abstract: No abstract text available
Text: 80960JA/JF/ JD /JT 3.3 V EMBEDDED 32-BIT MICROPROCESSOR Advance Information Datasheet P ro d u c t F , Model Two-Way Set Associative Instruction Cache - 80960JA - 2 Kbyte - 80960JF/ JD - 4 Kbyte - 80960JT , - 80960JF/ JD - 2 Kbyte - 80960JT - 4 Kbyte - Write Through Operation On-Chip Stack Frame Cache - , : 273159-001 March, 1998 80960JA/JF/ JD /JT 3.3 V Microprocessor inU Information in this document is , / JD /JT 3.3 VMicroprocessor may contain design defects or errors known as errata which may cause the


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PDF 80960JA/JF/JD/JT 32-BIT 80960Jx 80960JA/JF 80960JD 80960JT 80960JA 80960JF/JD ltdo
Not Available

Abstract: No abstract text available
Text: C opper Treated with dichrom ate over zinc plating (dim pled connectors are sol­ der or n ic k , . CL211-0016-0 JD AM -7W 2P No. o f P in P a ri N o. P L, W, | H ( a b t .\ #C L 2 , -196/U C L211-0033-0 JD M -C P -S S 15.9 1.02 2.4 1.5 C L211-0071-9 JD M -C P -S S 2 20.2 2.6 4.5 2.5 2.5C-2V C L211-0126-9 JD M -C P -S S 4 15.8 1.7 3.1 1.5 R fi.1 8 7 /7 1S8/U C L211-0150-3 JD M -C P-SS11 15.8 1.7 3.6 2


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PDF
i960 mc errata

Abstract: intel packaging handbook 240800 TG80960JA-25 80960JT
Text: Synchronize Faults Atom ic Add Atom ic Modify Advance Information Datasheet 13 80960JA/JF/ JD /JT , 80960JA/JF/ JD /JT 3.3 V EMBEDDED 32-BIT MICROPROCESSOR Advance Information Datasheet Product , Associative Instruction Cache - 80960JA - 2 Kbyte - 80960JF/ JD - 4 Kbyte - 80960JT - 16 Kbyte - Programmable Cache-Locking Mechanism Direct Mapped Data Cache - 80960JA - 1 Kbyte - 80960JF/ JD - 2 Kbyte - , latest datasheet before finalizing a design. O rder Num ber: 273159-001 M arch, 1998 80960JA/JF/ JD


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PDF 80960JA/JF/JD/JT 32-BIT 80960Jx 80960JA/JF 80960JD 80960JT 80960JA 80960JF/JD i960 mc errata intel packaging handbook 240800 TG80960JA-25
jd 1803 IC

Abstract: jd 1803 jd 1803 4 pin RT9167-33CB 20cb jd 1803 b ke marking transistor marking RT9167 RT9167-20CB RT9167-27CBR
Text: zero operation current makes the IC Cellular Telephones suitable for battery-power devices. Other , -30CB EF RT9167A-29CB JE RT9167-31CB EG RT9167A-30CB JD RT9167-32CB EH RT9167A , RT9167A-27CBR KC RT9167-27CBR IC RT9167A-28CBR KD RT9167-28CBR ID RT9167A , not more than 0.5" from the input pin of the IC and returned to a clean analog ground. Any good , by the load current. Operating Characteristics) show IC . Typical output voltage transient


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PDF RT9167/A 200mA/500mA RT9167/A 220mV 200mA) 100mV pas54 jd 1803 IC jd 1803 jd 1803 4 pin RT9167-33CB 20cb jd 1803 b ke marking transistor marking RT9167 RT9167-20CB RT9167-27CBR
Not Available

Abstract: No abstract text available
Text: DS2119M PRODUCT PREVIEW DALLAS s e m ic o n d u c to r FEATURES D S2119M Ultra2 LVD , 1 RIP □n 2 W 28 JD TPWR 27 n n TPWR RIN • A uto-selection of LVD , R2P □n 4 25 JD R9P R2N ÜL 5 24 JD R8N □n 6 23 JD R8P , plug com patible JD R7N R4N □ n 10 19 ÜL 11 18 n n R6P R5N □ n 12 17 an an 13 16 n n DIFFSENSE 14 15 ISO GND JD JD JD R6N 'o > "0


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PDF DS2119M S2119M DS2119M 28-PIN
2001 - MUBW10-06A7

Abstract: C150
Text: 0.6 45 VCE = 300V VGE = ±15V IC = 10A TVJ = 125°C Jd (on) 30 VCE = 300V VGE = ±15V IC , t Eoff Eoff 0.3 RG = 82 TVJ = 125°C Jd (off) VCE = 300V VGE = ±15V IC = 10A TVJ = , Symbol Conditions IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.4 mA; VGE = , load, TVJ = 125°C VCE = 300 V; IC = 10 A VGE = ±15 V; RG = 82 Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 300V; VGE = 15 V; IC = 10 A RthJC 0.6 mA mA 200 (per IGBT


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PDF MUBW1006A7 MUBW10-06A7 C150
2001 - JR802

Abstract: 3512 bridge rectifier diode T 3512 diode bridge 3512 mubw35-12a7
Text: Eoff Cies QGon RthJC IC = 35 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES , 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 47 D11 - D16 Rectifier Diode (typ.) Cth1 = 0.131 J , ; VGE = 15 V; IC = 35 A (per IGBT) Output Inverter D1 - D6 Symbol IF25 IF80 Conditions TC = 25°C TC = , td(off) tf Eon Eoff Cies QGon RthJC IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE , 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 82 VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600V


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PDF MUBW3512A7 JR802 3512 bridge rectifier diode T 3512 diode bridge 3512 mubw35-12a7
Not Available

Abstract: No abstract text available
Text: DS2119M PRELIMINARY DALLAS s e m ic o n d u c to r FEATURES DS2119M Ultra2 LVD/SE , □n 2 W 28 JD TPWR 27 n n TPWR RIN • A uto-selection of LVD or SE term , patible JD JD R9P □n 6 HS GND • Low power down capacitance of 3 pF JD 24 JD , 13 16 n n DIFFSENSE 14 15 ISO GND JD JD JD R6N 'o > "0 R5P a Tl â , between the Vref pin (VREF) and ground of each DS2119M. A high frequency cap (0.1 nF ceram ic SEN S


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PDF DS2119M DS2119M 28-PIN
2001 - Not Available

Abstract: No abstract text available
Text: energy and switching times versus collector current 80 Jd (on) VCE = 300V VGE = ±15V IC = 20A , = 1.09 V; R0 = 12 mΩ Symbol Conditions IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.5 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES 1.9 2.2 2.3 Inductive load, TVJ = 125°C VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 Ω Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 300V; VGE = 15 V; IC = 20 A RthJC 0.6 mA


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PDF MUBW2006A7
2001 - diode JD

Abstract: MUBW50-06A7 IGBT S 1377
Text: times versus collector current 4 Jd (on) Eon Eon 3 Jr 2 VCE = 300V VGE = ±15V IC = , 2 400 t Jd (off) 40 1 VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C 1 20 200 , . forward characteristics of free wheeling diode Jd (off) 0.5 V VCE = 300V VGE = ±15V IC = 25A , 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VGE(th) IC = 1 mA; VGE = VCE , 1.9 2.2 2.4 td(on) tr td(off) tf Eon Eoff Inductive load, TVJ = 125°C VCE = 300 V; IC


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PDF MUBW5006A7 diode JD MUBW50-06A7 IGBT S 1377
2001 - MUBW 20-06 A7

Abstract: MUBW2006A7 MUBW20-06A7 2006A7 20-06A7 igbt simulation
Text: 80 Jd (on) VCE = 300V VGE = ±15V IC = 20A TVJ = 125°C 10 t 500 VCE = 300V VGE = , Symbol Conditions IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.5 mA; VGE = , load, TVJ = 125°C VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 300V; VGE = 15 V; IC = 20 A RthJC 0.6 mA mA 200 (per IGBT , TC = 25°C 90 W Symbol Conditions VCE(sat) IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ =


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PDF MUBW2006A7 MUBW 20-06 A7 MUBW2006A7 MUBW20-06A7 2006A7 20-06A7 igbt simulation
2003 - ixys mubw 25-12 a7

Abstract: MUBW25-12A7 IXYS IGBT MUBW 25-12 2512 BRIDGE
Text: t Eoff Eoff Jd (off) VCE = 600V VGE = ±15V IC = 15A TVJ = 125°C 600 ns t 400 ns 400 Jd (off , Eon Eoff Cies QGon RthJC IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = , , TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 47 D11 - D16 Rectifier Diode (typ.) Cth1 = , 600V; VGE = 15 V; IC = 25 A (per IGBT) Output Inverter D1 - D6 Symbol IF25 IF80 Conditions TC = 25 , ) tf Eon Eoff Cies QGon RthJC IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.4 mA; VGE = VCE


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PDF motor25 MUBW2512A7 ixys mubw 25-12 a7 MUBW25-12A7 IXYS IGBT MUBW 25-12 2512 BRIDGE
Not Available

Abstract: No abstract text available
Text: codes) available for programming a chain o f IQX d e v ic e s are: 8x 10 00 10 10 aaaa aaaa , IN P ro ced u re f o r P ro g ra m m in g IQ X D e v ic e s IQX device(s) are completely , TDD41ÔÛ D0D101D lib IQ X D e v ic e In itialization W hen the system is first powered on, all the , or Test Logic Reset state. P ro g ra m m in g 1QX D e v ic e s w ith a “B ” Suffix Devices , (Capture DR) Bit Location 1 (MSB) During. JD Data Bit Function B it Shifting O rd


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PDF IQX320, IQX240B, IQX160 IQX128B. IQX160 IQX128B
2001 - diode JD

Abstract: No abstract text available
Text: VGE = ±15V IC = 30A 1.5 T = 125°C VJ 1.0 Jd (off) 400 ns 300 t 200 Eoff 40 , Symbol Conditions IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.7 mA; VGE = , load, TVJ = 125°C VCE = 300 V; IC = 30 A VGE = ±15 V; RG = 33 Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 30 A RthJC 0.6 mA mA 200 (per IGBT , Ptot TC = 25°C 95 W Symbol Conditions VCE(sat) IC = 15 A; VGE = 15 V; TVJ = 25


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PDF MUBW3006A7 diode JD
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