The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DSEP30-06BR IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, ISOPLUS247, 2 PIN
DSEP2X31-12A IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 2 Element, 30A, 1200V V(RRM), Silicon, MINIBLOC-4
DSEP29-03A IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 300V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN
DSEP2X31-04A IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 2 Element, 30A, 400V V(RRM), Silicon, MINIBLOC-4
DSEP30-06B IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-247AD, ISOPLUS247, 2 PIN
DSEP2X61-06A IXYS Corporation Rectifier Diode, Avalanche, 1 Phase, 2 Element, 60A, 600V V(RRM), Silicon, MINIBLOC-4

ixys dsep Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IXAN0060

Abstract: series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
Text: °C for IXYS HiPerFREDTM diodes. Now the diode with largest chip size ( DSEP 30-06B) requires lowest , IXYS series diode DSEP 906CR. This is due to its very short second portion of recovery time tB, what , Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS , DIFFERENT APPROACHES FOR DIODE OPTIMIZATION In addition to the well-known IXYS FREDs (named DSEI. for , called HiPerFREDTM (respectively DSEP . and DSEC.). Blocking currents have been reduced at high


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PDF IXAN0060 IXAN0060 series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
calculation of IGBT snubber

Abstract: DSEP ISOPLUS247 dt300
Text: corresponds to the LightspeedTM IGBT series of IXYS , while "R" stands for the ISOPLUS247TM package. DSEP , value of 175°C for IXYS HiPerFREDTM diodes. Now the diode with largest chip size ( DSEP 30-06B , requires less cooling effort than the IXYS series diode DSEP 906CR. This is due to its very short second , Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS , DIODE OPTIMIZATION In addition to the well-known IXYS FREDs (named DSEI. for single diodes and DSEK


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2008 - ixys dsep

Abstract: DSEP6-06AS P6QGUI
Text: to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080125 1-2 Advanced Technical Information DSEP 6-06BS 10 K/W 1 ZthJC 0.1 0.01 0.001 0.00001 DSEP 6-06AS DSEP 6-06BS 0.0001 0.001 0.01 , DSEP 6-06BS Advanced Technical Information HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = , 600 DSEP 6-06BS C A TO-252AA (DPAK) Cathode P6QGUI Cathode (Flange) Anode


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PDF 6-06BS O-252AA 6-06AS ixys dsep DSEP6-06AS P6QGUI
2004 - to252aadpak

Abstract: No abstract text available
Text: 0.1 0.01 0.001 0.00001 DSEP 8-03A 0.0001 0.001 0.01 s 0.1 1 t IXYS , DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO , losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 432 Data according to IEC 60747 1-2


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PDF 8-03AS O-252AA 8P030AS to252aadpak
2004 - 6P060AS

Abstract: No abstract text available
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO , reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 432 Data according to IEC 60747 1-2 DSEP 6-06AS 10 30 1000 A nC 8 800 IF VR = 300V VR =


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PDF 6-06AS O-252AA 6P060AS 6P060AS
2006 - 6P060AS

Abstract: 6-06AS
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V = 20 ns trr with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO , reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0611 Data according to IEC 60747 1-2 DSEP 6-06AS 10 30 1000 A nC 8 800 IF VR = 300V VR =


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PDF 6-06AS O-252AA 6P060AS 6P060AS 6-06AS
2004 - Not Available

Abstract: No abstract text available
Text: DSEP 8-03A 0.0001 0.001 0.01 s 0.1 1 t IXYS reserves the right to change limits , DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO , Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 432 Recommended replacement: DPG10IM300UC 20080317a 1-2


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PDF 8-03AS O-252AA 8P030AS
2000 - transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
Text: 0.15 1.02 0.45 1.24 1.0 2.8 © 2000 IXYS All rights reserved While the junction-to-case , assembly. Parts in the ISOPLUS247TM housing can be identified by the letter "R" in the IXYS part number , 50ns VF PRODUCT PART NUMBER V I UltraFast DSEK 60-02AR RECTIFIERS DSEC 60-03AR DSEP 9-06CR DSS 17-06CR DSEP 30-06BR DSEI 30-10AR DSEP 15-12CR DSEP 30-12CR DSEP 30-12AR DSEP 60-12AR , for the page number of the particular product. A4 - 2 © 2000 IXYS All rights reserved


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PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
2004 - Not Available

Abstract: No abstract text available
Text: Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 1-2 417 DSEP 8-03AS 30 A IF 20 TVJ =150°C TVJ =100°C TVJ = 25 , DSEP 8-03AS HiPerFREDTM Epitaxial Diode with soft recovery IFAVM = 8 A VRRM = 300 V trr = 30 ns VRSM V 300 VRRM V 300 Type DSEP 8-03AS Marking on product 8P030AS A C TO , ) 0.005 0.0003 0.017 1 ZthJC 0.1 1 2 3 0.01 0.001 0.00001 DSEP 8-03A 0.0001 0.001


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PDF 8-03AS 8P030AS O-252AA
2000 - Not Available

Abstract: No abstract text available
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS , 0.6 VRRM, duty cycle d = 0.5 030 Data according to IEC 60747 © 2000 IXYS All rights reserved D4 - 15 DSEP 6-06AS 10 30 1000 A nC 8 800 IF VR = 300V VR = 300V , forward voltage VFR and tfr versus diF/dt 10 K/W 1 ZthJC 0.1 0.01 0.001 0.00001 DSEP


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PDF 6-06AS O-252AA 6P060AS
2000 - 6P060AS

Abstract: 6p060
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS , losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 030 Data according to IEC 60747 © 2000 IXYS All rights reserved 1-2 DSEP 6-06AS 10 30 1000 A nC 8 800 IF VR = , voltage VFR and tfr versus diF/dt 10 K/W 1 ZthJC 0.1 0.01 0.001 0.00001 DSEP 6-06AS


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PDF 6-06AS O-252AA 6P060AS 6P060AS 6p060
2005 - Not Available

Abstract: No abstract text available
Text: unless otherwise specified) min. typ. max. © 2005 IXYS All rights reserved 3.0 5.0 300 1.5 , . Pulse test: Pulse width < 300 μs, duty cycle < 2 %; 2. Test current IT = 32 A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or , 1.5 6 7 8 9 10 11 12 13 V G E - Volts © 2005 IXYS All rights reserved , Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS


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PDF 32N90B2D1 150OC 150OC; IC110 125OC, 10parameters 30-12AR 0-12A) 0-12A 30-12AR)
2003 - DIODE Ifavm 30 A

Abstract: 8P030AS 8P030
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking , IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 IXYS reserves the right to change limits, test conditions and dimensions © 2003 IXYS All rights reserved 335 Data according to IEC 60747 1-1 IXYS


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PDF 8-03AS O-252AA 8P030AS DIODE Ifavm 30 A 8P030AS 8P030
2000 - 30-12CR

Abstract: No abstract text available
Text: DSEP 30-12CR Advanced Technical Information HiPerDynFREDTM IFAV = 30 A VRRM = 1200 V trr , ISOPLUS 247TM V 1200 Type A C C A Isolated back surface * DSEP 30-12CR A = Anode , specified Dimensions see IXYS CD 2000 IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 008 Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 µs, Duty Cycle < 2.0 % 1-1 IXYS


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PDF 30-12CR 247TM 247TM 30-12CR
1999 - Not Available

Abstract: No abstract text available
Text: DSEP 6 Fast Recovery Epitaxial Diode (FRED) IFAVM = 6 A VRRM = 600 V trr = 20 ns Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A , 2 3 4 ©1999 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D , IXYS reserves the right to change limits, test conditions and dimensions. 1-1 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXYS


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PDF 6-06AS O-252AA 6P060AS D-68623
2011 - IC IGBT 15N120

Abstract: bi-directional switches IGBT 15n120
Text: TVJ = 25°C TVJ = 125°C VCE = 120 V; VGE = 15 V; IC = 10 A IXYS reserves the right to change limits, test conditions and dimensions. 20110120b © 2011 IXYS All rights reserved 1-2 Advanced Technical Information IXRA 15N120 Fig. 1 turn-on/turn-off with external diode ( DSEP 30-12 , 3.0 0.1 0.65 25 300 0.65 max. ns ns ns ns mJ mJ ns ns ns ns mJ mJ mJ A ns K/W External diode DSEP , within JEDEC standard. 20110120b IXYS reserves the right to change limits, test conditions and


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PDF 15N120 O-263AB 20110120b IC IGBT 15N120 bi-directional switches IGBT 15n120
2005 - SiS 961

Abstract: 32N90B 720V 125OC 32N90B2D1 IF110 ISOPLUS247 32n90 IXGR32N90B2D1 32N9
Text: 20 V VCE(sat) IC = IT, VGE = 15 V, Note 1 © 2005 IXYS All rights reserved Characteristic , . IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are , 13 V G E - Volts © 2005 IXYS All rights reserved 14 15 16 17 4 5 6 7 , 1 0.1 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or


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PDF 32N90B2D1 150OC 150OC; IC110 125OC, 30-12AR 0-12A) 0-12A 30-12AR) SiS 961 32N90B 720V 125OC 32N90B2D1 IF110 ISOPLUS247 32n90 IXGR32N90B2D1 32N9
2011 - 15n120

Abstract: No abstract text available
Text: = 0 V; VGE = ± 20 V QGon IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Converters requiring reverse blocking capability: - , diode ( DSEP 30-12) IGBT Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. External diode DSEP 30-12 - diagramm see Fig. 1 22 18 210 , 1.02 1.68 0.040 0.066 L2 3x b 3x b2 E1 IXYS reserves the right to change limits


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PDF 15N120 O-263AB 20110120b 15n120
2000 - BERULUB FR 16

Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 schema inverter welding UC3858 veridul BERULUB FR 16 B
Text: Design and Experimental Investigation of a new Vienna Rectifier © 2000 IXYS All rights reserved M1 , specified one. If not otherwise stated IXYS IGBTs are tested with a gate voltage switched from +15 V to 0 , IXYS All rights reserved What is a HiPerFETTM Power MOSFET? The HiPerFETTM family of Power MOSFETs , applications. This new class of Power MOSFET uses IXYS ' HDMOS IITM process, improving the ruggedness of the , by IXYS , incorporating the ultra-low RDS(on), high unclamped inductive energy capability (UIS), and


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PDF ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 schema inverter welding UC3858 veridul BERULUB FR 16 B
2003 - DSEE8-06CC

Abstract: No abstract text available
Text: IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights , commutating switch See DSEP 8-03A data sheet for characteristic curves. com/l178.pdf , isolated from Pin 1, 2 or 3. 2. Pin connections: 1 - Cathode 2 - Anode/Cathode 3 - Anode IXYS


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PDF 8-06CC ISOPLUS220TM E153432 com/l178 DS98758A DSEE8-06CC ISOPLUS220 DSEE8-06CC
2002 - 260TC

Abstract: 30-06A DSEE30-12A dsee3012 DSEP 12A
Text: Turn-on loss in the commutating switch Notes Please see DSEP 30-06A Data Sheet for characteristic , Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS , 0.252 .170 .216 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850 , 5,486,715 5,381,025 6,306,728B1 IXYS


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PDF DSEE30-12A O-247 728B1 260TC 30-06A DSEE30-12A dsee3012 DSEP 12A
6P060AS

Abstract: D-68623 6a600
Text: Fast Recovery Epitaxial Diode (FRED) Preliminary Data DSEP6 I FAVM Vrrm trr 6 A 600 V 20 ns VrsM Vrrm Type Marking V V on product 600 600 DSEP 6-06AS 6P060AS TO-252AA (DPAK) Cathode , 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 ©1999 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions. IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1 - 1 IXYS Corporation 3540 Bassett Street, Santa


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PDF 6-06AS 6P060AS O-252AA D-68623 6P060AS 6a600
2003 - DSEE15-06CC

Abstract: No abstract text available
Text: ms, Duty Cycle < 2.0 % Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % © 2003 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions. A , reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch See DSEP , - Cathode 2 - Anode/Cathode 3 - Anode IXYS


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PDF DSEE15-06CC ISOPLUS220TM E153432 5-03A DS98827B ISOPLUS220 DSEE15-06CC
2003 - si6306

Abstract: DPG30P300PJ
Text: Width = 5 ms, Duty Cycle < 2.0 % ePulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved de si , diode - Turn-on loss in the commutating switch See DSEP 29-03A data sheet for characteristic curves , IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,850,072 ne 4,881,106 4,931,844 5 , ,728B1 6,404,065B1 6,259,123B1 6,162,665 gn IXYS


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PDF DSEE29-06CC ISOPLUS220TM E153432 9-03A 20080317a ISOPLUS220 728B1 065B1 si6306 DPG30P300PJ
2002 - Not Available

Abstract: No abstract text available
Text: Power dissipation within the diode - Turn-on loss in the commutating switch Notes Please see DSEP , ¡ Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved DS98962 (10/02) DSEE30-12A TO-247 AD , 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the


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PDF DSEE30-12A O-247 728B1
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