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IXYS Corporation
IXTQ40N50L2 N CHANNEL POWER MOSFET, LINEAR L2, 500V, 40A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:500V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:3Pins; MSL:-;RoHS Compliant: Yes
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Newark element14 IXTQ40N50L2 Bulk 10 1 $14.93 $13.57 $11.26 $9.37 $9.37 Buy Now
Chip1Stop IXTQ40N50L2 30 1 $12.478 $11.719 $10.909 $10.909 $10.909 Buy Now
element14 Asia-Pacific IXTQ40N50L2 10 1 $22.6 $22.6 $19 $19 $19 Buy Now
Farnell element14 IXTQ40N50L2 10 1 £12.3 £9.98 £8.95 £8.95 £8.95 Buy Now
IXYS Corporation
IXTQ100N25P MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:250V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:600W; MSL:- ;RoHS Compliant: Yes
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Newark element14 IXTQ100N25P Bulk 18 1 $10.52 $9.47 $7.16 $5.96 $5.96 Buy Now
TME Electronic Components IXTQ100N25P 8 1 $18.93 $13.03 $13.03 $13.03 $13.03 Buy Now
element14 Asia-Pacific IXTQ100N25P 18 1 $16.65 $14.99 $11.33 $8.99 $8.99 Buy Now
Farnell element14 IXTQ100N25P 18 1 £11.08 £7.75 £7.75 £7.75 £7.75 Buy Now
IXYS Corporation
IXTQ110N10P Transistor: N-MOSFET; unipolar; 100V; 110A; 480W; TO3P
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TME Electronic Components IXTQ110N10P 24 1 $6.71 $4.64 $4.17 $4.17 $4.17 Buy Now
Chip1Stop IXTQ110N10P 180 30 - - $4.43 $4.43 $4.43 Buy Now
IXYS Corporation
IXTQ120N20P Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO3P
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TME Electronic Components IXTQ120N20P 22 1 $12.7 $8.78 $7.89 $7.89 $7.89 Buy Now
Chip1Stop IXTQ120N20P 25 1 $8.806 $8.036 $6.887 $6.887 $6.887 Buy Now
New Advantage Corporation IXTQ120N20P 40 40 - - $7.29 $7.29 $7.29 Buy Now
IXYS Corporation
IXTQ140N10P Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO3P
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TME Electronic Components IXTQ140N10P 26 1 $8.7 $6.01 $5.41 $5.41 $5.41 Buy Now
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IXYS Corporation
IXTQ150N15P Transistor: N-MOSFET; unipolar; 150V; 150A; 714W; TO3P
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TME Electronic Components IXTQ150N15P 9 1 $18.8 $13.03 $13.03 $13.03 $13.03 Buy Now
Farnell element14 IXTQ150N15P 0 1 £8.52 £5.96 £5.42 £5.42 £5.42 Buy Now
IXYS Corporation
IXTQ36N30P Transistor: N-MOSFET; unipolar; 300V; 36A; 300W; TO3P
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TME Electronic Components IXTQ36N30P 6 1 $7.87 $5.05 $5.05 $5.05 $5.05 Buy Now
IXYS Corporation
IXTQ42N25P Transistor: N-MOSFET; unipolar; 250V; 42A; 300W; TO3P
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TME Electronic Components IXTQ42N25P 4 1 $7.6 $5.25 $5.25 $5.25 $5.25 Buy Now
IXYS Corporation
IXTQ460P2 Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO3P
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TME Electronic Components IXTQ460P2 63 1 $4.79 $3.39 $3.21 $3.21 $3.21 Buy Now
Chip1Stop IXTQ460P2 240 1 $6.09 $6.09 $3.72 $3.44 $3.44 Buy Now
IXYS Corporation
IXTQ50N20P Transistor: N-MOSFET; unipolar; 200V; 50A; 360W; TO3P
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TME Electronic Components IXTQ50N20P 25 1 $4.62 $3.19 $2.87 $2.87 $2.87 Buy Now
Chip1Stop IXTQ50N20P 86 1 $6.22 $4.04 $3.32 $3.32 $3.32 Buy Now
IXYS Corporation
IXTQ52N30P Transistor: N-MOSFET; unipolar; 300V; 52A; 400W; TO3P
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TME Electronic Components IXTQ52N30P 1 1 $10.63 $7.35 $7.35 $7.35 $7.35 Buy Now
Chip1Stop IXTQ52N30P 30 1 $4.88 $4.44 $4.014 $4.014 $4.014 Buy Now
IXYS Corporation
IXTQ62N15P Transistor: N-MOSFET; unipolar; 150V; 62A; 350W; TO3P
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TME Electronic Components IXTQ62N15P 8 1 $7.6 $5.25 $5.25 $5.25 $5.25 Buy Now
IXYS Corporation
IXTQ64N25P Transistor: N-MOSFET; unipolar; 250V; 64A; 400W; TO3P
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TME Electronic Components IXTQ64N25P 8 1 $10.51 $7.27 $7.27 $7.27 $7.27 Buy Now
IXYS Corporation
IXTQ69N30P Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO3P
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TME Electronic Components IXTQ69N30P 27 1 $10.63 $7.35 $6.61 $6.61 $6.61 Buy Now
IXYS Corporation
IXTQ74N20P Transistor: N-MOSFET; unipolar; 200V; 74A; 480W; TO3P
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TME Electronic Components IXTQ74N20P 30 1 $6.49 $4.48 $4.03 $4.03 $4.03 Buy Now
Chip1Stop IXTQ74N20P 120 30 - - $4.25 $4.25 $4.25 Buy Now
IXYS Corporation
IXTQ75N10P Transistor: N-MOSFET; unipolar; 100V; 75A; 360W; TO3P
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TME Electronic Components IXTQ75N10P 10 1 $7.6 $5.25 $5.25 $5.25 $5.25 Buy Now
Chip One Exchange IXTQ75N10P 1,950 - - - - - Get Quote
IXYS Corporation
IXTQ96N20P INSTOCK
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Chip One Exchange IXTQ96N20P 510 - - - - - Get Quote
Chip1Stop IXTQ96N20P 150 1 $9.37 $9.37 $5.3 $5.3 $5.3 Buy Now
IXYS Corporation
IXTQ22N50P Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P
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Chip1Stop IXTQ22N50P 24 1 $3.944 $3.591 $3.591 $3.591 $3.591 Buy Now
IXYS Corporation
IXTQ36N50P Trans MOSFET N-CH 500V 36A 3-Pin(3+Tab) TO-3P
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Chip1Stop IXTQ36N50P 34 1 $6.599 $6.071 $5.803 $5.803 $5.803 Buy Now
IXYS Corporation
IXTQ52P10P Trans MOSFET P-CH 100V 52A 3-Pin(3+Tab) TO-3P
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Chip1Stop IXTQ52P10P 2,040 1 $5.286 $5.286 $4.048 $3.054 $3.054 Buy Now
IXYS Corporation
IXTQ480P2 Trans MOSFET N-CH 500V 52A 3-Pin(3+Tab) TO-3P
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Chip1Stop IXTQ480P2 31 1 $7.77 $7.073 $6.29 $6.29 $6.29 Buy Now
IXYS Corporation
IXTQ26P20P Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-3P
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Chip1Stop IXTQ26P20P 90 30 - - $4.61 $4.61 $4.61 Buy Now
IXYS Corporation
IXTQ88N30P MOSFET, N, TO-3P
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element14 Asia-Pacific IXTQ88N30P 1 1 $15.94 $15.94 $13.06 $9.88 $9.88 Buy Now
Farnell element14 IXTQ88N30P 0 1 £8.86 £6.2 £5.64 £5.64 £5.64 Buy Now
IXYS Corporation
IXTQ30N60L2 MOSFET,N CH,600V,30A,TO-3P
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Farnell element14 IXTQ30N60L2 2 1 £9.5 £8.99 £8.52 £8.52 £8.52 Buy Now
IXYS Corporation
IXTQ120N15P
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New Advantage Corporation IXTQ120N15P 40 40 - - $5.68 $5.68 $5.68 Buy Now

ixtq datasheet (83)

Part Manufacturer Description Type PDF
IXTQ100N25P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
IXTQ102N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-3P Original PDF
IXTQ10P50P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-3P Original PDF
IXTQ110N055P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
IXTQ110N10P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
IXTQ120N15P IXYS PolarHT Power MOSFET Original PDF
IXTQ120N20P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
IXTQ130N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-3P Original PDF
IXTQ130N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 130A TO-3P Original PDF
IXTQ140N10P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
IXTQ14N60P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 14A TO-3P Original PDF
IXTQ14N60P IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF
IXTQ150N06P IXYS PolarHT Power MOSFET N-Channel Enhancement Mode Original PDF
IXTQ150N15P IXYS PolarHT Power MOSFET Original PDF
IXTQ152N085T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 152A TO-3P Original PDF
IXTQ160N075T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-3P Original PDF
IXTQ160N085T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 160A TO-3P Original PDF
IXTQ160N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 160A TO-3P Original PDF
IXTQ16N50P IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF
IXTQ170N10P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF

ixtq Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P IXTP IXTP IXTP IXTP IXTP75N10P 36N30 200N10P-88
Text: x 6 IXTP 110N055P IXTP 75N10P IXTQ 110N10P IXTQ 140N10P IXTQ 170N10P IXTK 200N10P IXTP 62N15P IXTQ 96N15P IXTQ 120N15P IXTQ 150N15P IXTK 180N15P IXTP 50N20P IXTQ 74N20P IXTQ 96N20P IXTQ 120N20P IXTK 140N20P IXTP 42N25P IXTQ 64N25P IXTQ 82N25P IXTQ 100N25P IXTK 120N25P IXTP 36N30P IXTQ 52N30P IXTQ 69N30P IXTQ 88N30P IXTK 102N30P Source bond wire recommended Equivalent device data sheet PolarHT TM MOSFETs


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PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P IXTP IXTP IXTP IXTP IXTP75N10P 36N30
2006 - 150N15P

Abstract: 150n15 IXTQ150N15P 2709V
Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS(on) 13 m , © 2006 IXYS All rights reserved V V ±100 TJ = 175° C 5.0 D (TAB) S TO-3P ( IXTQ ) G , 13 D nA 25 500 G m l DS99299E(03/06) IXTK 150N15P IXTQ 150N15P Symbol , 25 A -di/dt = 100 A/µs VR = 100 V, VGS = 0 V QRM 150 ns 2.3 TO-3P ( IXTQ ) Outline , ,710,405B2 6,759,692 6,710,463 6,771,478 B2 IXTK 150N15P IXTQ 150N15P Fig. 1. Output


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PDF 150N15P O-264 150N15P 150n15 IXTQ150N15P 2709V
2005 - 50N28T

Abstract: 50N28 DS99378 50N2 ixTA50N28T
Text: Advance Technical Information IXTQ 50N28T IXTA 50N28T IXTP 50N28T Trench Gate Power MOSFET , -3P ( IXTQ ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to , reserved V Advantages m DS99378(04/05) IXTA 50N28T IXTP 50N28T IXTQ 50N28T Symbol Test , 1 MHz S 4070 Ciss TO-3P ( IXTQ ) Outline pF Crss td(on) 37 ns tr VGS = , ,692 2 - Drain IXTA 50N28T IXTP 50N28T IXTQ 50N28T Fig. 1. Output Characteristics Fig. 2


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PDF 50N28T O-220 O-263 50N28T 50N28 DS99378 50N2 ixTA50N28T
2005 - Not Available

Abstract: No abstract text available
Text: Display Application IXTQ 64N28T VDSS ID25 RDS(on) = 280 V = 64 A = 49 m Symbol VDSS VDGR , -55 . +150 150 -55 . +150 V V V V A A V/ns W °C °C °C °C TO-3P ( IXTQ ) G D S (TAB , rights reserved DS99301(01/05) IXTQ 64N28T Symbol Test Conditions Characteristic Values (TJ = 25 , ID25 43 37 S pF pF pF ns ns ns ns 140 nC nC nC 0.25 K/W 0.21 K/W TO-3P ( IXTQ ) Outline gfs Ciss Coss , ,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXTQ


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PDF 64N28T
2004 - 36n50P

Abstract: No abstract text available
Text: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 , dv/dt G A EAR TO-3P ( IXTQ ) PD TC = 25°C 500 TL 300 250 1.6 mm (0.062 , µA µA 170 G = Gate S = Source m DS99228(11/04) IXTQ 36N50P IXTT 36N50P Symbol , 60 pF td(on) 29 TO-3P ( IXTQ ) Outline ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 , 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTQ 36N50P IXTT 36N50P Fig. 2


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PDF 36N50P 36n50P
2006 - 150N06P

Abstract: No abstract text available
Text: PolarHTTM Power MOSFET IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A ≤ 10 mΩ â , -3P ( IXTQ ) µA µA 10 mΩ DS99254E(12/05) IXTQ 150N06P Symbol Test Conditions , 3000 Ciss 50 TO-3P ( IXTQ ) Outline pF Crss 27 ns tr td(on) VGS = 10 V, VDS = , ,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 150N06P Fig. 1. Output , -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTQ


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PDF 150N06P 150N06P
2006 - 74N20P

Abstract: No abstract text available
Text: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω ≤ 34 , width limited by TJM 200 A IAR TC = 25° C 60 TO-3P ( IXTQ ) Maximum Ratings A , High power density µA µA 34 l mΩ l DS99119E(12/05) IXTQ 74N20P IXTT 74N20P , 190 Ciss 44 TO-3P ( IXTQ ) Outline pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 23 , 6,759,692 6,771,478 B2 IXTQ 74N20P IXTT 74N20P Fig. 2. Extended Output Characteristics @


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PDF 74N20P O-268 74N20P
2006 - Not Available

Abstract: No abstract text available
Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 64N25P IXTT 64N25P = = ≤ RDS(on) 250 V , 25° C, pulse width limited by TJM 160 A IAR TC = 25° C 60 TO-3P ( IXTQ ) Maximum , © 2006 IXYS All rights reserved l mΩ DS99120E(12/05) IXTQ 64N25P IXTT 64N25P Symbol , Ciss 30 TO-3P ( IXTQ ) Outline pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 21 ns tr , ,478 B2 IXTQ 64N25P IXTT 64N25P Fig. 1. Output Characte ris tics @ 25ºC Fig. 2. Exte nde d


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PDF 64N25P O-268
2004 - IXTQ26N50P

Abstract: PLUS220SMD 26n50ps b5237
Text: Advanced Technical Information IXTQ 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET , Conditions (TJ = 25°C, unless otherwise specified) TO-3P ( IXTQ ) D (TAB) S G = Gate S = Source , savings High power density DS99206(11/04) IXTQ 26N50P IXTV 26N50P IXTV 26N50PS Symbol Test , td(on) 20 TO-3P ( IXTQ ) Outline ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr , ,463 6,727,585 6,759,692 2 - Drain TAB - Drain IXTQ 26N50P IXTV 26N50P IXTV 26N50PS Fig


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PDF 26N50P 26N50PS 15noCoulombs 26N50P IXTQ26N50P PLUS220SMD 26n50ps b5237
2006 - 120N20P

Abstract: IXTQ120N20P 120N20
Text: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS(on) 22 m , © 2006 IXYS All rights reserved V V ±100 TJ = 175° C 5.0 (TAB) S TO-3P ( IXTQ ) G , 22 D nA 25 500 G m l DS99207E(10/05) IXTK 120N20P IXTQ 120N20P TO , .170 .070 .090 .238 .248 V trr QRM Dim. 180 3.0 TO-3P ( IXTQ ) Outline ns µC , 6,727,585 6,759,692 6,771,478 B2 IXTK 120N20P IXTQ 120N20P Fig. 1. Output Characteristics @


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PDF 120N20P O-264 120N20P IXTQ120N20P 120N20
2006 - Not Available

Abstract: No abstract text available
Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω IXTH 30N60P IXTQ , ) Characteristic Values Min. Typ. Max. RDS(on) S TO-3P ( IXTQ ) °C °C °C 300 260 TJ TJM , packages l Low package inductance - easy to drive and to protect DS99251E(12/05) IXTH 30N60P IXTQ , ,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 27 30 IXTH 30N60P IXTQ 30N60P IXTT , IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Fig. 9. Source Curre nt vs . Source


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PDF 30N60P 30N60PS O-247 PLUS220 O-268 30N60P
2006 - IXTP86N20T

Abstract: 86n20t
Text: IXTA 86N20T IXTP 86N20T IXTQ 86N20T Trench Gate Power MOSFET VDSS ID25 = 200 V = 86 , -220 (IXTP) G (TAB) D S TO-3P ( IXTQ ) G D (TAB) S G = Gate S = Source D = Drain , 86N20T IXTQ 86N20T Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 46 , IXTA 86N20T Fig. 1. Output Characteristics @ 25ºC IXTP 86N20T IXTQ 86N20T Fig. 2. Extended , IXTA 86N20T IXTP 86N20T IXTQ 86N20T Fig. 8. Transconductance Fig. 7. Input Admittance 160


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PDF 86N20T O-263 O-220 IXTP86N20T 86n20t
2004 - 52n30p

Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30
Text: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 , µA 66 TO-3P ( IXTQ ) G C (TAB) E TO-268 (IXTT) G G = Gate S = Source S , mount Space savings High power density DS99115A(10/04) IXTQ 52N30P IXTT 52N30P Symbol Test , ) 24 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 20 TO-3P ( IXTQ ) Outline tr VGS , ,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTQ 52N30P IXTT


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PDF IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30
2004 - Not Available

Abstract: No abstract text available
Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A RDS(on) 22 m N-Channel Enhancement Mode TO-3P ( IXTQ ) Symbol Test , . DS99207(09/04) IXTK 120N20P IXTQ 120N20P TO-3P Outline Symbol Test Conditions Characteristic , .330 .342 .150 .170 .070 .090 .238 .248 IXTK 120N20P IXTQ 120N20P Fig. 1. Output , TC - Degrees Centigrade 150 175 IXTK 120N20P IXTQ 120N20P Fig. 8. Transconductance Fig


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PDF 120N20P
2004 - Not Available

Abstract: No abstract text available
Text: PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ69N30P IXTT69N30P , Ratings 300 300 ± 20 V V V A A A mJ J V/ns W °C °C °C °C TO-3P ( IXTQ ) TC = 25°C TC = 25°C, pulse , process. US patent is pending. DS99078A(04/04) © 204 IXYS All rights reserved IXTQ 69N30P IXTT , nC nC nC 0.25 K/W (TO-247, TO-3P) 0.21 K/W TO-3P ( IXTQ ) Outline gfs Ciss Coss C rss td(on) tr td , ,404,065B1 6,162,665 6,534,343 IXTQ 69N30P IXTT 69N30P Fig. 1. Output Characte ris tics @ 25 De g


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PDF IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P
2004 - Not Available

Abstract: No abstract text available
Text: PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 69N30P IXTT 69N30P VDSS ID25 RDS(on , 300 300 ± 20 ± 30 V V V V A A A mJ J V/ns W °C °C °C °C TO-3P ( IXTQ ) G C E (TAB) TC = 25 , process. US patent is pending. DS99078A(04/04) © 204 IXYS All rights reserved IXTQ 69N30P IXTT , nC nC nC 0.25 K/W (TO-247, TO-3P) 0.21 K/W TO-3P ( IXTQ ) Outline gfs Ciss Coss C rss td(on) tr td , ,404,065B1 6,162,665 6,534,343 IXTQ 69N30P IXTT 69N30P Fig. 1. Output Characte ris tics @ 25 De g


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PDF 69N30P 69N30P O-268
2005 - 88N30

Abstract: IXTH88N30P DSA003702
Text: IXTK 88N30P IXTQ 88N30P VDSS ID25 RDS(on) = 300 V = 88 A = 40 m TO-247 (IXTH) Symbol VDSS , G D (TAB) S TO-264(SP) (IXTK) TO-3P ( IXTQ ) 1.13/10 Nm/lb.in. 6.0 10 5.5 g g g Features , 88N30P IXTQ 88N30P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified , ns ns ns nC nC nC 0.21 K/W TO-247 and TO-3P TO-264 0.21 0.15 K/W K/W TO-3P ( IXTQ ) Outline gfs Ciss , ,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 IXTH88N30P IXTK 88N30P IXTQ 88N30P Fig. 1


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PDF 88N30P 88N30P O-247 O-247 O-264 IXTH88N30P 88N30 DSA003702
2005 - Not Available

Abstract: No abstract text available
Text: IXTQ 44N50P VDSS ID25 RDS(on) = 500 V = 44 A < 140 m Symbol VDSS VDGR VGSM ID25 IDM IAR EAR , Maximum Ratings TO-3P ( IXTQ ) 500 500 ± 30 V V V A A A mJ J V/ns W °C °C °C °C °C TC = 25°C TC = 25 , DS99364(03/05) IXTQ 44N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise , pF ns ns ns ns nC nC nC 0.19 K/W (TO-3P) 0.21 K/W TO-3P ( IXTQ ) Outline gfs Ciss Coss Crss td(on , 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTQ 44N50P Fig. 1. Output Characteristics @ 25ºC 45


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PDF 44N50P 405B2
2005 - IXTV18N60P

Abstract: PLUS220SMD
Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A 400 m RDS(on) N-Channel Enhancement Mode TO-3P ( IXTQ ) Symbol Test Conditions VDSS , DS99324A(04/05) IXTQ 18N60P IXTV 18N60PS IXTV18N60P Symbol Test Conditions Characteristic , -3P ( IXTQ ) Outline ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 , IXTQ 18N60P IXTV 18N60PS IXTV18N60P Fig. 1. Output Characteristics Fig. 2. Output


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PDF 18N60P 18N60PS PLUS220 IXTV18N60P 2005IXYS IXTV18N60P PLUS220SMD
2005 - 22N60P

Abstract: IXTQ22N60P siemens 30 PLUS220SMD
Text: IXTQ 22N60P IXTV 22N60P IXTV 22N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 22 A 330 m RDS(on) N-Channel Enhancement Mode Preliminary Data Sheet TO-3P ( IXTQ ) Symbol Test , Space savings High power density DS99250B(04/05) IXTQ 22N60P Symbol Test Conditions , ID25, pulse test 15 21 pF 305 pF C rss 38 pF td(on) 20 TO-3P ( IXTQ , ,405B2 6,710,463 6,727,585 6,759,692 2 - Drain TAB - IXTQ 22N60P Fig. 1. Output


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PDF 22N60P 22N60PS PLUS220 PLUS220SMD 22N60P IXTQ22N60P siemens 30 PLUS220SMD
2006 - 100N25P

Abstract: No abstract text available
Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A , D D (TAB) S TO-3P ( IXTQ ) G D (TAB) S TJ ≤150° C, RG = 4 Ω PD TC = 25 , IXTQ 100N25P IXTT 100N25P TO-3P ( IXTQ ) Outline Symbol Test Conditions Characteristic Values , 6,759,692 6,771,478 B2 IXTK 100N25P IXTQ 100N25P IXTT 100N25P Fig. 2. Exte nde d Output Char , 50 75 100 TC - Degrees Centigrade 125 150 IXTK 100N25P IXTQ 100N25P IXTT 100N25P


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PDF 100N25P 100N25P
69N30P

Abstract: ixtq69n30p
Text: IXTQ 69N30P IXTT 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A = 49 m , V ±30 V 69 A 200 TO-3P ( IXTQ ) A VGSM ID25 TC = 25°C IDM TC = 25 , process. US patent is pending. DS99078A(04/04) IXTQ 69N30P IXTT 69N30P Symbol Test Conditions , = 1 MHz S 4960 Ciss 48 TO-3P ( IXTQ ) Outline pF 25 ns tr VGS = 10 V , ,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTQ 69N30P IXTT


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PDF 69N30P O-268 69N30P ixtq69n30p
2006 - 26N50P

Abstract: IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p
Text: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = , -3P ( IXTQ ) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to , ) IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Symbol Test Conditions Characteristic Values , 24 TO-3P ( IXTQ ) Outline VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ID25 , ,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 26N50P IXTT 26N50P


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PDF 26N50P 26N50PS 26N50P IXTV26N50PS O-268 IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p
2006 - 22N50P

Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
Text: PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 22N50P IXTQ 22N50P IXTV , A mJ mJ V/ns W °C °C °C °C °C G G D D (TAB) S TO-3P ( IXTQ ) S (TAB) PLUS220 (IXTV , density DS99351E(03/06) © 2006 IXYS All rights reserved IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV , TO-3P ( IXTQ ) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 22 A, -di/dt , ,463 6,727,585 6,759,692 6,771,478 B2 IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS Fig. 1


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PDF 22N50P 22N50PS O-247 PLUS220 IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
2006 - 96n15

Abstract: No abstract text available
Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω ≤ 24 , MΩ 150 V TO-3P ( IXTQ ) VGSS Continuous ±20 V VGSM Transient ±30 V , All rights reserved l mΩ DS99131E(12/05) IXTQ 96N15P IXTT 96N15P Symbol Test , , f = 1 MHz S 3500 Ciss 45 TO-3P ( IXTQ ) Outline pF Crss 30 ns tr td , ,478 B2 IXTQ 96N15P IXTT 96N15P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output


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PDF 96N15P 96n15
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