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Part Manufacturer Description Datasheet Download Buy Part
LM134H-6 Linear Technology Analog Temperature Sensor, ANALOG TEMP SENSOR-CURRENT, ROUND, THROUGH HOLE MOUNT, METAL CAN, TO-46, 3 PIN
LM134H-3 Linear Technology Analog Temperature Sensor, ANALOG TEMP SENSOR-CURRENT, ROUND, THROUGH HOLE MOUNT, METAL CAN, TO-46, 3 PIN
ATH006A0X4-SRZ GE Critical Power Austin Microlynx II SMT Non-isolated Power Modules
AXH016A0X3-SR GE Critical Power Austin SuperLynx SMT Non-isolated Power Module
ATH006A0X4-SR GE Critical Power Austin Microlynx II SMT Non-isolated Power Modules
AXA003A0X4-SRZ GE Critical Power Austin Minilynx 12V SMT Non-isolated Power Module

isoplus ixys mounting Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - IXAN0022

Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross isoplus ixys mounting KU4499 KU3-381 4490 mosfet
Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation , IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS i4-PAC TM, ISOPLUS264 TM as well as the new ISOPLUS-DIL TM modules. The ISOPLUS advantages relative to the standard power packages , and quantify the ISOPLUS advantages and focus on mounting techniques and materials that optimize the , MOSFET bridges in the ISOPLUS-DIL package. Clip Assembly The ISOPLUS packages eliminate the mounting


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PDF IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross isoplus ixys mounting KU4499 KU3-381 4490 mosfet
2006 - IXLF19N250A

Abstract: isoplus ixys mounting Discrete IGBTS IXEL40N400 IGBT 1500V 40a Igbts guide device xray generators IXFX55N50 IXFR55N50 ixys pb free
Text: combining IXYS ISOPLUS package use with clip mounting and next generation phase change interface materials , ISOPLUS i5-PACTM RTH(J-DCB) RTH(DCB-Case) Description * IXYS Patented Packages, Patent No. 6,404 , enabling load disconnect for improved systems safety. IXYS proprietary ISOPLUS discrete packaging , IXLF19N250A comes in IXYS ISOPLUS i4-PacTM, while the IXEL40N400 is offered in IXYS newly designated ISOPLUS i5-PACTM. All of IXYS ISOPLUS packages are manufactured with an internal DCB isolated substrate, are UL


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PDF 500V/4000V IXLF19N250A IXEL40N400 220mJ IXLF19N250A isoplus ixys mounting Discrete IGBTS IXEL40N400 IGBT 1500V 40a Igbts guide device xray generators IXFX55N50 IXFR55N50 ixys pb free
IGBT 4000V

Abstract: isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
Text: IXYS ' ISOPLUS (TM) packaging to enable simpler mounting with improved reliability. ADVERTISEMENT IXYS , improved by combining IXYS ' ISOPLUS package use with clip mounting and next generation phase change , enabling load disconnect for improved systems safety. IXYS ' proprietary ISOPLUS discrete packaging , IXLF19N250A comes in IXYS ' ISOPLUS i4-Pac(TM), while the IXEL40N400 is offered in IXYS ' newly designated ISOPLUS i5-PAC(TM). All of IXYS ' ISOPLUS packages are manufactured with an internal DCB isolated


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PDF 000V/40A 2006--IXYS IXEL40N400. IGBT 4000V isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
xenon hid ballast

Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary ISOPLUS i4-PACTM packaging , ; 6,534,343; 6,583,505; 6,710,463; 6,731,002; 7,005,734 * For information regarding IXYS ISoPLUS , layout space savings. The ISOPLUS i4-PACTM is a UL recognized isolated package incorporating a direct


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PDF E153432) com/IXAN0022 xenon hid ballast Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
IXGF30N400

Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 IXGT25N250 IXBX64N250 IXTH1N250 Discrete IGBTS
Text: ; 6,534,343; 6,583,505; 6,710,463; 6,731,002; 7,005,734 * For information regarding IXYS ISOPLUS , critical key for extending the lifespan and competitiveness of designs in the marketplace. IXYS ' unique , 3500 IGBT Market 3000 2500 Graphic on the left illustrates IXYS ' IGBT device 2000 , 4000 MOSFET Market 3500 Graphic on the right illustrates IXYS ' 2500 MOSFET device , Very High Voltage IGBTs IXYS ' offers a unique portfolio of discrete 2500V, 3000V, and 4000V VHV IGBTs


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PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 IXGT25N250 IXBX64N250 IXTH1N250 Discrete IGBTS
1262-33

Abstract: IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
Text: TrenchMVTM (55V-100V) Power MOSFETs The ISOPLUSTM Advantage All IXYS ISOPLUS packages are , capabilities of IXYS ISOPLUS packages. Kunze high performance phase change materials can be used to further , power handling capability and special lead configuration found in the IXYS discrete ISOPLUS i4-Pak , handling and integration capabilities found in the IXYS discrete ISOPLUS i5-Pak. Standard discrete , M TrenchMVTM (55V-100V) Power MOSFETs The ISOPLUSTM Advantage All IXYS ISOPLUS packages are


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PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
IXAN0025

Abstract: diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 SIL-PAD 600 PLUS247 CS 112 thyristor IXFR150N10 SIL-PAD
Text: 247 package Now IXYS is introducing a new family of internally isolated power semiconductors in the , namely ISOPLUS220TM, ISOPLUS247TM and ISOPLUS i4TM, not only provides a 2500 V(RMS) isolation voltage , construction are announced for certification. Standard Isolation Methods The standard mounting method to , creep distance between the device mounting tab and the screw. (Internal AlN DCB) (Internal AlO3 DCB , 123.6 IXAN0025 In 1998 IXYS introduced the PLUS247TM package, a ,holeless` TO-247 requiring a


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PDF IXAN0025 ISOPLUS220TM ISOPLUS247TM D-68623 IXAN0025 diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 SIL-PAD 600 PLUS247 CS 112 thyristor IXFR150N10 SIL-PAD
IXFR170N10

Abstract: SIL-PAD to-247 IXFX55N50 ISOPLUS247 IXFR150N10 26N50 IXFR55N50 IXFX180N10 PLUS247 SIL-PAD
Text: mounting system. Table 1 compares the thermal resistance of a 170A/100V MOSFET chip in the ISOPLUS , , Product Marketing, IXYS Semiconductor GmbH & Ralph Locher, Application Engineering, IXYS Corporation , thermal resistance R(th)cs. Now IXYS is introducing a new family of internally isolated power , cycling, compared to conventionally isolated devices. Standard Isolation Methods The standard mounting , creep distance between the device mounting tab and the screw. Table 1 (additional examples see table


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PDF ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXFR170N10 SIL-PAD to-247 IXFR150N10 26N50 IXFR55N50 IXFX180N10 PLUS247 SIL-PAD
2000 - DIN ISO 1302

Abstract: Dow Corning 340 TO247 CASE isoplus ixys mounting ejot torque SMD-247 Dow Corning DC 11 plug M4 threaded stud SCREW EJOT Dow Corning
Text: (A)1 Chassis thickness [mm]: Mounting force [N]: TO-247 / TO-264 ISOPLUS 247 i4-PAC 1-2 , nut M3/M3,5 nut *) Not used for non-isolated mounting © 2000 IXYS All rights reserved L , reserved L-2 Mounting instructions Modules IXYS modules are 100% tested prior to leaving the , information see our video on IXYS DATA BOOK CD. Mounting screw fastening procedures 4 3 2 1 , > 2 All mounting screws should have washers and spring washers. IXYS provides additional mounting


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2000 - transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247TM ­ ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247TM is the DCB isolated version of the PLUS247TM-package (TO247 without a mounting hole). The design of , 0.15 1.02 0.45 1.24 1.0 2.8 © 2000 IXYS All rights reserved While the junction-to-case , power- and temperature cycling is reduced so that reliability is improved. Mounting is done with clips


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PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
IXAN0028

Abstract: IXFX55N50 26N50 ISOPLUS247 IXFR150N10 IXFR170N10 IXFX180N10 PLUS247
Text: mounting system. Table 1 compares the thermal resistance of a 170A/100V MOSFET chip in the ISOPLUS , Arnold, Product Marketing, IXYS Semiconductor GmbH & Ralph Locher, Application Engineering, IXYS , case-to-heatsink thermal resistance R(th)cs. Now IXYS is introducing a new family of internally isolated power , cycling, compared to conventionally isolated devices. Standard Isolation Methods The standard mounting , creep distance between the device mounting tab and the screw. Table 1 (additional examples see table


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PDF IXAN0028 ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXAN0028 26N50 IXFR150N10 IXFR170N10 IXFX180N10 PLUS247
IXAN0026

Abstract: 1kw single phase IGBT inverter IC Module 1000V igbt dc to dc buck converter IEC61000-3-4 chopper control igbt buck 600V igbt dc to dc buck converter MOSFET Based Chopper design of boost chopper circuit 600V igbt dc to dc boost converter 1kw single phase IGBT inverter CIRCUIT
Text: Andreas Lindemann IXYS Semiconductor GmbH, Postfach 1180, D { 68619 Lampertheim http://www.IXYS.com , industrial and automotive drives or for power supplies. The new package will be named Isoplus I4PacTM in , packages. The experiences gained by IXYS ' proprietary DCB production and discrete assembly, together with , Semiconductor Package 3 Standard mounting processes can be used: The pins are soldered into a printed circuit , . This mounting procedure allows considerable savings, because no external isolator is required. High


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PDF IXAN0026 IEC61000-3-2: IEC61000-3-4: UC3853 IXAN0026 1kw single phase IGBT inverter IC Module 1000V igbt dc to dc buck converter IEC61000-3-4 chopper control igbt buck 600V igbt dc to dc buck converter MOSFET Based Chopper design of boost chopper circuit 600V igbt dc to dc boost converter 1kw single phase IGBT inverter CIRCUIT
2000 - 27n80q

Abstract: No abstract text available
Text: Mounting torque TO-264 PLUS 247/ ISOPLUS 247 TO-264 0.4/6 300 Features · IXYS advanced low Qg process , Nm/lb.in. 6 10 g g TO-264 AA (IXFK) G D S (TAB) ISOPLUS 247TM (IXFR) E153432 G D , controls Advantages · PLUS 247TM package for clip or spring mounting · Space savings · High power density , 10 V, ID = 0.5 · ID25 Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. C1 - 272 © 2000 IXYS All rights reserved IXFK 27N80Q Symbol Test Conditions IXFR


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PDF 27N80Q 27N80Q 247TM O-264
2001 - Not Available

Abstract: No abstract text available
Text: -Common Source Topologyin ISOPLUS i4-PACTM = 75 A = 100 V = 25 m 4 5 3 1 1 5 2 , (diode) IF = 37.5 A; -di/dt = 100 A/µs; VDS = 25 V RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved V 0.3 mA mA · HiPerFETTM , (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode · ISOPLUS i4-PACTM package - , mounting force with clip Symbol Conditions Cp coupling capacity between shorted pin and


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PDF 75-01F 75-01F
2007 - ixys rectifier

Abstract: DUAL DIODE power diode package Schottky diode low voltage single power diode package
Text: Advanced Technical Information Dual Power Schottky Diode FSS 100-008A in ISOPLUS i4-PACTM , : DSSS 35-008AR Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved , voltage - extremely fast switching - blocking capability optimized for elevated temperature · ISOPLUS , Ratings -55.+175 -55.+125 mounting force with clip Symbol Conditions CP coupling


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PDF 00-008A ixys rectifier DUAL DIODE power diode package Schottky diode low voltage single power diode package
solar inverter circuit

Abstract: 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SOLAR INVERTER SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Text: packages as well as IXYS proprietary ISOPLUS isolated packages, offering UL recognized 2500V isolation and , regarding IXYS ISoPLUS packages, visit http://www.ixys.com/IXAN0022.pdf July 2009 ceramic substrate , POWER Efficiency Through Technology N E W P R O D U C T B R I E F IXYS expands its , discrete power components. IXYS has combined the latest Silicon Carbide diode technology with its advanced , IGBT and diode, giving way to substantial system-level performance improvements. IXYS GenX3SCTM IGBTs


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PDF E153432) com/IXAN0022 pb60IGBTSC solar inverter circuit 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SOLAR INVERTER SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
MOSFET Based Chopper

Abstract: MKE11R600DCGFC MOSFET Based Chopper applications MKE11R600DC CoolMOS mosfet 12A 600V Solar inverter power module design of boost chopper circuit
Text: ," stated Bradley Green, VP of International Sales for IXYS . "Our patented ISOPLUS i4TM package , boost diode integrated in the IXYS ISOPLUS i4TM package. The ISOPLUSTM technology gives the designer a , FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 323 744 020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Releases the Highest Density, Highest Efficiency MOSFET , , CA. August 24, 2010 ­ IXYS Corporation (NASDAQ: IXYS ) announces the successful integration of


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2003 - 317 MOSFET

Abstract: Control of Starter-generator starter/generator D-68623 Power MOSFET 30 A, 60 V, Logic Level POWER MOSFET Logic Level logic level low rdson
Text: Trench Power MOSFET logic level gate control -Phaseleg Topologyin ISOPLUS i4-PACTM 3 T1 5 4 , control - very low on state resistance RDSon - fast switching - fast body diode · ISOPLUS i4-PACTM , industry standard outline - UL registered, E 72873 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa


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PDF 140-004PL 317 MOSFET Control of Starter-generator starter/generator D-68623 Power MOSFET 30 A, 60 V, Logic Level POWER MOSFET Logic Level logic level low rdson
2004 - ne 22 mosfet

Abstract: solar inverter solar inverter circuit mosfet Vds 50 Vgsth
Text: Topology in ISOPLUS i4-PACTM 3 Preliminary data 5 T1 4 1 1 T2 2 si gn 5 , 65 50 ID25 ID90 V 65 50 VGS V IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved · trench MOSFET - very low on state resistance RDSon - fast switching - fast body diode · ISOPLUS i4-PACTM package - isolated back surface - , Conditions IRMS Maximum Ratings per pin 75 -55.+175 -55.+125 mounting force with clip


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PDF 65-015P ne 22 mosfet solar inverter solar inverter circuit mosfet Vds 50 Vgsth
2005 - Not Available

Abstract: No abstract text available
Text: FMK 75-01F HiPerFETTM Power MOSFET Common Source Topology in ISOPLUS i4-PACTM Preliminary data , ) capability - dv/dt ruggedness - fast intrinsic reverse diode · ISOPLUS i4-PACTM package - isolated back , paste u V A A A A V/ns mJ 0.3 mA mA 200 nA nC nC nC ns ns ns ns 1.5 V ns 0.5 K/W K/W t V IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved , mA; 50/60 Hz mounting force with clip Conditions coupling capacity between shorted pins and mounting


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PDF 75-01F
2005 - Not Available

Abstract: No abstract text available
Text: Source Topology in ISOPLUS i4-PACTM 4 Preliminary data 5 T1 3 1 1 T2 2 5 , inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode · ISOPLUS , with heat transfer paste 0.93 0.5 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 1.2 1.5 V 0522 VF 1-2 FMK , -55.+125 VISOL 20.120 mounting force with clip Symbol Conditions Cp pin - pin pin -


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PDF 75-01F
2004 - 151007

Abstract: No abstract text available
Text: Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM with DAB Base 3 T1 5 4 1 1 T2 , . 4.7 2 VGS = ±20 V; VDS = 0 V - fast body diode · DAB based ISOPLUS i4-PACTM package - , ns RthJC RthJH with heat transfer paste 1.0 0.6 K/W K/W IXYS reserves the right to , dimensions. © 2004 IXYS All rights reserved 1.5 V · automotive - AC drives - starter generator for , Ratings per pin 75 -55.+175 -55.+125 VISOL 20.120 mounting force with clip


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PDF 151-0075P 151007
2004 - Not Available

Abstract: No abstract text available
Text: level gate control Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data T1 5 4 1 1 , with heat transfer paste 1.5 1.0 K/W K/W © 2004 IXYS All rights reserved V · automotive , choppers or inverters for drives in hand held tools - battery chargers ns IXYS reserves the right , diode · ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and , -55.+175 -55.+125 VISOL 20.120 mounting force with clip Symbol Conditions Cp pin


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PDF 200-004PL
2000 - 27N80Q

Abstract: TO-264
Text: TC = 25°C 500 -55 . +150 150 -55 . +150 TL Mounting torque °C 1.6 mm (0.063 in , PLUS 247/ ISOPLUS 247 TO-264 Symbol Test Conditions VDSS VGS = 0 V, ID = 250uA VGS(th , ±100 nA TJ = 125°C VGS = 10 V, ID = 0.5 · ID25 Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 6 10 Characteristic , /lb.in. 100 mA 2 mA 300 mW TO-264 AA (IXFK) G D (TAB) S ISOPLUS 247TM (IXFR


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PDF 27N80Q 247TM 27N80Q TO-264
2001 - solar blocking diode

Abstract: No abstract text available
Text: Advanced Technical Information Dual Power Schottky Diode FSS 100-008A in ISOPLUS i4-PACTM , ) Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 1.0 2 , - blocking capability optimized for elevated temperature · ISOPLUS i4-PACTM package - DCB , 0.0394") Conditions Maximum Ratings -55.+175 -55.+125 VISOL FC mounting force with clip


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PDF 00-008A solar blocking diode
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