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IRFD120PBF Vishay Siliconix TRANSISTOR Si, POWER, FET, ROHS COMPLIANT, HVMDIP-4, FET General Purpose Power
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IRFD120 International Rectifier Bristol Electronics 8,500 - -
IRFD120 Vishay Intertechnologies Avnet 2 - -
IRFD120 International Rectifier New Advantage Corporation 2,067 - -
IRFD120 Harris Semiconductor Bristol Electronics 1,162 - -
IRFD120 Vishay Siliconix Bristol Electronics 95 - -
IRFD120 International Rectifier Bristol Electronics 180 - -
IRFD120 Harris Semiconductor Bristol Electronics 725 $0.75 $0.24
IRFD120 Motorola Semiconductor Products Bristol Electronics 430 $0.75 $0.24
IRFD120PBF Vishay Siliconix ComS.I.T. 730 - -
IRFD120PBF Vishay Siliconix New Advantage Corporation 23,156 $0.56 $0.53
IRFD120PBF Vishay Siliconix Allied Electronics & Automation - $0.96 $0.96
IRFD120PBF Vishay Intertechnologies Avnet 3,112 $0.91 $0.37
IRFD120PBF Vishay Intertechnologies Allied Electronics & Automation 555 $0.75 $0.61
IRFD120PBF Vishay Intertechnologies Bristol Electronics 82 - -
IRFD120PBF Vishay Intertechnologies TME Electronic Components 3,602 $0.50 $0.34
IRFD120PBF Vishay Intertechnologies Future Electronics 11,569 $0.40 $0.37
IRFD120PBF Vishay Intertechnologies Schukat electronic 4,300 €0.33 €0.27
IRFD120PBF Vishay Intertechnologies Chip1Stop 417 $0.71 $0.57
IRFD120PBF Vishay Intertechnologies Chip1Stop 100 $2.12 $0.75
IRFD120PBF Vishay Intertechnologies element14 Asia-Pacific 928 $1.10 $0.39
IRFD120PBF Vishay Intertechnologies Farnell element14 991 £0.27 £0.26
IRFD120PBF Vishay Intertechnologies Avnet - $0.89 $0.46
IRFD120S2497 Harris Semiconductor Rochester Electronics 400 $0.43 $0.35

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irfd120 datasheet (30)

Part Manufacturer Description Type PDF
IRFD120 Fairchild Semiconductor N-Channel Power MOSFET Original PDF
IRFD120 Harris Semiconductor Power MOSFET Selection Guide Original PDF
IRFD120 Intersil 1.3A, 100V, 0.300 ?, N-Channel Power MOSFET Original PDF
IRFD120 Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRFD120 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.3A 4-DIP Original PDF
IRFD120 General Electric Power Transistor Data Book 1985 Scan PDF
IRFD120 Harris Semiconductor (IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs Scan PDF
IRFD120 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRFD120 International Rectifier Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) Scan PDF
IRFD120 International Rectifier Plastic Package HEXFETs Scan PDF
IRFD120 International Rectifier N-Channel Power MOSFETs Scan PDF
IRFD120 International Rectifier HEXFET Power MOSFETs Scan PDF
IRFD120 International Rectifier HEXFET Power MOSFET Scan PDF
IRFD120 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 1.3A, Pkg style HEXDIP Scan PDF
IRFD120 Motorola European Master Selection Guide 1986 Scan PDF
IRFD120 Motorola (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package Scan PDF
IRFD120 Motorola Switchmode Datasheet Scan PDF
IRFD120 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRFD120 Others Semiconductor Master Cross Reference Guide Scan PDF
IRFD120 Others FET Data Book Scan PDF

irfd120 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
irfd120

Abstract: No abstract text available
Text: Part Number IRFD120 IRFD123 V(BR)DSS (V) r DS(on) (Q ) Product Summary 100 60 0.3 0.4 I d (A) 1.3 , °C Symbol V ds Vg S ÏD 1dm Pd ÏRFD120 100 ±20 1.3 0.8 5.2 1.0 0.4 -5 5 to 150 300 IRFD123 60 ± 20 , N-/P-Channel MOSFETs IRFD120 /123 Specifications (Tj = 25°C Unless Otherwise Noted) Parameter , Current On-State Drain Current*5 V(BR)DSS v GS(th) Igss Idss iD(on) V qs = 0 V, Id = 250 IRFD120 IRFD123 , , V qs = 0 V V ds = 0.8 x V^br ^ ss . V qs = 0 V,Tj = 125°C IRFD120 vDS = iov,vGs = iov IRFD123


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PDF IRFD120/123 IRFD120 IRFD123 RFD120 P-36852-- P-36852--Rev. 06/06/fH)
IRFD123

Abstract: D120 IRFD120 if1070 IRFD 120 IRFD 123
Text: Temic Siliconix IRFD120 /123 N-Channel Enhancement-Mode Transistors Product Summary Part Number V(BR)DSS W rDS(on) (ß) ID (A) IRFD120 100 0.3 1.3 IRFD123 60 0.4 1.1 4-Pin DIP Ga: s tr , rjt« z P-36852—Rev. D (06/06/94) 6-41 irfd120 /123 Temic Siliconix Specifications (Tj = 25 , Breakdown Voltage V(BR)dss VGS-0V,ID-250nA IRFD120 100 V IRFD123 60 Gate Threshold Voltage VGS

IRFD120 1.3 A IRFD123 1.1


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PDF IRFD120/123 IRFD120 IRFD123 IK1D123 -55DC P-36852â 25C--7// D120 if1070 IRFD 120 IRFD 123
2001 - irfd120

Abstract: No abstract text available
Text: IRFD120 Data Sheet July 1999 File Number 2315.3 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET , PART NUMBER IRFD120 PACKAGE HEXDIP BRAND IRFD120 Symbol D NOTE: When ordering, use the entire , ©2001 Fairchild Semiconductor Corporation IRFD120 Rev. A IRFD120 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFD120 100 100 1.3 5.2 ±20 1.0 0.008 36 -55 to 150 300 260 UNITS V V , oC/W ©2001 Fairchild Semiconductor Corporation IRFD120 Rev. A IRFD120 Source to Drain


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PDF IRFD120 TB334 irfd120
IRFD121

Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
Text: integrated circuits. Formerly developmental type TA17401. Symbol PART NUMBER PACKAGE BRAND IRFD120 HEXDIP IRFD120 IRFD121 HEXDIP IRFD121 IRFD122 HEXDIP IRFD122 IRFD123 HEXDIP IRFD123 s Packaging HEXDIP , proper ESD Handling Procedures. Copyright © Harris Corporation 1998 . File Number 2315.2 IRFD120 , IRFD121, IRFD122, IRFD123 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRFD120 , Source Breakdown Voltage IRFD120 , IRFD122 BVdss Id = 250hA, Vgs = 0V (Figure 9) 100 - - V IRFD121


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PDF IRFD121, TB334 IRFD121 TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
IRFD120

Abstract: irfd123 IRF0123
Text: N-Channel Enhancement Mode IRFD120 IRFD123 Ideal for Peripheral Control Applications Intermediate 1 Watt , otherwise noted) Tl, CASE 370-01, STYLE 1 Rating Symbol IRFD120 IRFD123 Unit Drain-Source Voltage vdss , °c/w IRFD120 IRFD123 ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted) Characteristic , ) IRFD120 IRFD123 V(BR)DSS 100 60 _ _ Vdc Zero Gate Voltage Drain Current (Vdss = Rated VDSS. VGS = 0 v , Voltage (Id = 250HA, VDS = VGS) vGS(th) 20 — 40 Vdc Static Drain-Source On-Resistance (1 ) IRFD120


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PDF IRFD120 IRFD123 IRFD123 IRF0123
2008 - irfd120

Abstract: No abstract text available
Text: Package Lead (Pb)-free SnPb HEXDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 ABSOLUTE MAXIMUM RATINGS TC , IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , apply Document Number: 91128 S-81393-Rev. A, 07-Jul-08 www.vishay.com 1 IRFD120 , SiHFD120 Vishay , www.vishay.com 2 Document Number: 91128 S-81393-Rev. A, 07-Jul-08 IRFD120 , SiHFD120 Vishay Siliconix , -Jul-08 www.vishay.com 3 IRFD120 , SiHFD120 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source


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PDF IRFD120, SiHFD120 12-Mar-07 irfd120
2002 - IRFD120

Abstract: TA17401 TB334
Text: IRFD120 Data Sheet January 2002 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features , developmental type TA17401. Ordering Information PART NUMBER IRFD120 PACKAGE HEXDIP Symbol BRAND D IRFD120 NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE ©2002 Fairchild Semiconductor Corporation IRFD120 Rev. B IRFD120 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRFD120 100 100 1.3 5.2 ±20 1.0


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PDF IRFD120 IRFD120 TA17401 TB334
1998 - IRFD120 HARRIS

Abstract: IRFD123 IRFD120 IRFD121 IRFD122 TA17401 TB334
Text: IRFD120 , IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 , Components to PC Boards" Symbol Ordering Information PART NUMBER D PACKAGE BRAND IRFD120 , IRFD120 IRFD123 S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN , IRFD120 , IRFD121, IRFD122, IRFD123 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings , . . . . . . . . . Tpkg IRFD120 100 100 1.3 5.2 ±20 1.0 0.008 36 -55 to 150 IRFD121


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PDF IRFD120, IRFD121, IRFD122, IRFD123 IRFD120 HARRIS IRFD123 IRFD120 IRFD121 IRFD122 TA17401 TB334
IRFD120

Abstract: IRFD121 IRFD122 IRFD123 irfd1201
Text: ) IRFD120 ,1 - - 5.2 A IRFD122, 3 - - 4.4 A VgQ Diode Forward Voltage © IRFD120.1 - - 2.5 V TC = 25 , Standard Power MOSFETs- IRFD120 , IRFD121, IRFD122, IRFD123 Power MOS Field-Effect Transistore , carrier device TERMINAL DIAGRAM TERMINAL DESIGNATION The IRFD120 , IRFD121, IRFD122, and IRFD123 are , MAXIMUM RATINGS Parameter IRFD120 IRFD121 IRFD122 IRFD123 Units Vos Drain - Source Voltage G 100 60 , Characteristics @Tc = 25°C IRFD120 , IRFD121, IRFD122, IRFD123 Unless Otherwise Specified) Parameter Type Min


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PDF IRFD120, IRFD121, IRFD122, IRFD123 IRFD123 IRFD120 IRFD121 IRFD122 irfd1201
2009 - IRFD120

Abstract: No abstract text available
Text: IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , G S D N-Channel MOSFET ORDERING INFORMATION Package HEXDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , apply Document Number: 91128 S-81393-Rev. A, 07-Jul-08 www.vishay.com 1 IRFD120 , SiHFD120 , www.vishay.com 2 Document Number: 91128 S-81393-Rev. A, 07-Jul-08 IRFD120 , SiHFD120 Vishay Siliconix


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PDF IRFD120, SiHFD120 18-Jul-08 IRFD120
2009 - IRFD120

Abstract: No abstract text available
Text: HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC , IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , -Sep-09 www.vishay.com 1 IRFD120 , SiHFD120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , , 21-Sep-09 IRFD120 , SiHFD120 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise , Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFD120 , SiHFD120


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PDF IRFD120, SiHFD120 2002/95/EC 18-Jul-08 IRFD120
1999 - Power MOSFET in a HEXDIP package

Abstract: TA17401 IRFD120 TB334
Text: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET · 1.3A, 100V , type TA17401. Ordering Information IRFD120 PACKAGE HEXDIP 2315.3 Features This , File Number Symbol BRAND D IRFD120 NOTE: When ordering, use the entire part number. G , | Copyright © Intersil Corporation 1999 IRFD120 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRFD120 100 100 1.3 5.2 ±20 1.0 0.008 36 -55 to 150 UNITS V V A A V W W/oC


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PDF IRFD120 TB334 TA17401. Power MOSFET in a HEXDIP package TA17401 IRFD120 TB334
2010 - irfd120

Abstract: No abstract text available
Text: . ORDERING INFORMATION Package Lead (Pb)-free SnPb HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 , IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , -Nov-10 www.vishay.com 1 IRFD120 , SiHFD120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , ; duty cycle 2 %. www.vishay.com 2 Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 IRFD120 , . Temperature Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 www.vishay.com 3 IRFD120 , SiHFD120


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PDF IRFD120, SiHFD120 2002/95/EC 18-Jul-08 irfd120
385H

Abstract: IRFD120
Text: International Rectifier PD-9.385H IRFD120 HEXFET® Power MOSFET • Dynamic dv/dt Rating â , /W 503 IRFD120 te Electrical Characteristics @ Tj = 25°C (unless otherwise specified) Parameter Min , (volts) Fig 1. Typical Output Characteristics, Tc=25°C IRFD120 tn o. E < -t—i c 03 ^ O c co a to! vat , 1b0 Tj, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 505 IRFD120 u. a , LIMITED BY, RDS ION) VDS, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating Area 506 IRFD120


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PDF IRFD120 0-27O 385H
IRFD120

Abstract: No abstract text available
Text: HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS , IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , -Nov-10 www.vishay.com 1 IRFD120 , SiHFD120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , www.vishay.com 2 Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 IRFD120 , SiHFD120 Vishay Siliconix , On-Resistance vs. Temperature www.vishay.com 3 IRFD120 , SiHFD120 Vishay Siliconix Fig. 5 - Typical


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PDF IRFD120, SiHFD120 2002/95/EC 11-Mar-11 IRFD120
385H

Abstract: IRFD120 dual mosfet marking 506
Text: International S Rectifier PD-9.385H IRFD120 HEXFET® Power MOSFET • Dynamic dv/dt Rating , Junction-to-Ambient — — 120 °C/W 503 IRFD120 I«R Electrical Characteristics @ Tj = 25 C (unless otherwise , , Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Tc=25°C IRFD120 a. E < Q KT1 10 , . Normalized On-Resistance Vs. Temperature 505 IRFD120 Fig 5. Typical Capacitance Vs. Drain-to-Source , , Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating Area 506 I«R IRFD120 E < £ 3 o Ç 0.6 's


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PDF IRFD120 385H IRFD120 dual mosfet marking 506
IRFD120

Abstract: No abstract text available
Text: HD-1 (HEXDIP) EXAMPLE: THIS IS AN IRFD120 INTERNATIONAL RECTIFIER LOGO LAST FOUR DIGITS OF ASSEMBLY LOT CODE PART NUMBER IRFD120' :ioryyww xxxx DATE CODE (YYWW) YY = YEAR WW = WEEK


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PDF IRFD120 IRFD120' IRFD120
Not Available

Abstract: No abstract text available
Text: HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS , IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , Number: 91128 S10-2462-Rev. C, 08-Nov-10 www.vishay.com 1 IRFD120 , SiHFD120 Vishay Siliconix , cycle  2 %. www.vishay.com 2 Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 IRFD120 , -2462-Rev. C, 08-Nov-10 Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFD120


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PDF IRFD120, SiHFD120 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2012 - IRFD120

Abstract: No abstract text available
Text: . ORDERING INFORMATION Package Lead (Pb)-free SnPb HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 , IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , -Nov-10 www.vishay.com 1 IRFD120 , SiHFD120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , ; duty cycle 2 %. www.vishay.com 2 Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 IRFD120 , . Temperature Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 www.vishay.com 3 IRFD120 , SiHFD120


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PDF IRFD120, SiHFD120 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFD120
2012 - Not Available

Abstract: No abstract text available
Text: . ORDERING INFORMATION Package Lead (Pb)-free SnPb HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 , IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , -Nov-10 www.vishay.com 1 IRFD120 , SiHFD120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , ; duty cycle 2 %. www.vishay.com 2 Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 IRFD120 , . Temperature Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 www.vishay.com 3 IRFD120 , SiHFD120


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PDF IRFD120, SiHFD120 2002/95/EC 11-Mar-11
IRFD120

Abstract: No abstract text available
Text: PD- 95981 IRLD024PbF Lead-Free 1 IRLD024PbF 2 IRLD024PbF Hexdip Package Outline Hexdip Part Marking Information THIS IS AN IRFD120 INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE DATE CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S ITE CODE 8 International Rectifier


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PDF IRLD024PbF IRFD120 IRFD120
IRFD120

Abstract: PD-95980
Text: PD-95980 IRLD110PbF Lead-Free 1 IRLD110PbF 2 IRLD110PbF Hexdip Package Outline Hexdip Part Marking Information THIS IS AN IRFD120 INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFD120 XXXX ASS EMBLY LOT CODE DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S ITE CODE 8 International Rectifier


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PDF PD-95980 IRLD110PbF IRFD120 IRFD120 PD-95980
IRFD120

Abstract: IRLD120PBF
Text: PD-95979 IRLD120PbF Lead-Free 1 IRLD120PbF 2 IRLD120PbF Hexdip Package Outline Hexdip Part Marking Information T HIS IS AN IRFD120 INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S IT E CODE 8 International Rectifier


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PDF PD-95979 IRLD120PbF IRFD120 IRFD120 IRLD120PBF
2015 - Not Available

Abstract: No abstract text available
Text: HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS , IRFD120 , SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , Number: 91128 S10-2462-Rev. C, 08-Nov-10 www.vishay.com 1 IRFD120 , SiHFD120 Vishay Siliconix , cycle  2 %. www.vishay.com 2 Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 IRFD120 , -2462-Rev. C, 08-Nov-10 Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFD120


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PDF IRFD120, SiHFD120 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFD120

Abstract: No abstract text available
Text: PD- 95927 IRFD110PbF Lead-Free 1 IRFD110PbF 2 IRFD110PbF Hexdip Package Outline Dimensions are shown in millimeters (inches) Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S IT E CODE 8 International Rectifier


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PDF IRFD110PbF IRFD120 IRFD120
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