The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-0 Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

igbt failure fit Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
advantage and disadvantage of igbt

Abstract: Calculation of major IGBT operating parameters failure analysis IGBT IEC60749-5 igbt failure fit IEC60749 MTBF IGBT fit IEC60068-2-6 IEC60068-2-27 calculation of the major IGBT operating
Text: of failure mechanisms and how the failure rate is determined. FAILURE MECHANISMS The IGBT module , . The unit of failure rate is FIT (1 FIT = 10-9 /h). There are several methods of evaluating the , to case. = failure rate ( FIT ) N = number of cycles to fail. = Chi square confidence value A = fitting parameter. B = fitting parameter. TD Fig. 6 IGBT gate-oxide failure , AN 5945 IGBT Module Reliability Application Note AN5945-5 October 2010 LN27638 Authors


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PDF AN5945-5 LN27638 advantage and disadvantage of igbt Calculation of major IGBT operating parameters failure analysis IGBT IEC60749-5 igbt failure fit IEC60749 MTBF IGBT fit IEC60068-2-6 IEC60068-2-27 calculation of the major IGBT operating
2003 - IEC60749

Abstract: MTBF IGBT fit MTBF IGBT module igbt failure IEC60068-2-14 vibration igbt module testing AN5945-3 igbt testing procedure ge traction motor igbt qualification circuit
Text: of failure mechanisms and how the failure rate is determined. FAILURE MECHANISMS The IGBT module , . The unit of failure rate is FIT (1 FIT = 10-9 /h). There are several methods of evaluating the , 2000 2002 2004 2006 2008 2010 DATE Fig. 6 IGBT gate-oxide failure rate A N , AN 5945 IGBT Module Reliability Application Note AN5945-3 October 2009 LN26894 Authors , insulation and also overfill of epoxy resin to provide rigidity. IGBT & FRD Die Substrate Assembly


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PDF AN5945-3 LN26894 IEC60749 MTBF IGBT fit MTBF IGBT module igbt failure IEC60068-2-14 vibration igbt module testing igbt testing procedure ge traction motor igbt qualification circuit
1998 - 9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 IRGBC20FD HTGB IRGPH60UD2 igbt failure fit
Text: a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES: IGBT / CoPack , NOTES a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES: IGBT , to understand the reliability of specific product like the IGBT it is useful to determine the failure , (t) Infant Failures Wearout Failures Log Failure Random Failures Log Time t IGBT , 6023 0 NOTES a. b. One FIT represents one failure in one billion (1.0E+09) hours. FAILURE MODES


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PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 IRGBC20FD HTGB IRGPH60UD2 igbt failure fit
2001 - infineon mtbf

Abstract: MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate
Text: APPLICATION NOTE Page 1 von 2 Definition of FIT and MTBF A failure rate =is defined by the , failure rates is 1 fit (failures in time) = 1*10-9h-1, meaning one failure in 109 operation hours of the device. A component specified with 100 fit is therefore expected to operate 107 hours. Example , -7 h -1 4000 * 5000h 10 -7 = -9 -1 fit = 100 fit 10 h = or expressed in fit : The failure , the fit value, the operating conditions must be given. For eupec IGBT modules these conditions are


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PDF 10-9h-1, 5000h infineon mtbf MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate
TRANSISTOR 9642

Abstract: T0247 package 9544 transistor what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRGPC40U irg4ph50ud IRG4BC20FD 600V 16 TO220 IRGB440U
Text: reliability of specific product like the IGBT it is useful to determine the failure rate associated with each , 1.61E+07 57 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability Report Page 9 of 35 HIGH TEMPERATURE REVERSE , failure in one billion (1.0E+09) hours. b. FAILURE MODES: IGBT / CoPack Quarterly Reliability , 3.73E+06 245 1.12E+07 82 NOTES a. One FIT represents one failure in one billion (1.0E+09) hours


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PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 T0247 package 9544 transistor what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRGPC40U irg4ph50ud IRG4BC20FD 600V 16 TO220 IRGB440U
2001 - Inverter Delta

Abstract: eupec igbt 10kv 6.5kV IGBT igbt 3.3kv EUPEC Thyristor 1200A eupec igbt 3.3kv Thyratron dc to ac inverter DIAGRAM thyristor inverter thyratron eupec igbt 6.5kV
Text: Module require a failure rate for IGBT IHM / IHV Module modules in the range of 100 fit (1 1000 Medium Power IGBT Module fit corresponds to one failure in 9 10 hours of operation). To confirm this , well below 100 fit for the high power IGBT modules. References (1) T. Laska, L. Lorenz, A. Mauder , The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze , modern high voltage IGBT chip and packaging technology eupec is developing a product range of 6.5kV IGBT


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1997 - OF IGBT

Abstract: IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 how can test igbt siemens igbt BSM 75 gb 100 reliability report and tests for failure rate Siemens BSM 50 GB 100 DN1
Text: produced modules allow a general statement as follows: Failure in Time: 200 FIT @ T A = 40°C Due to the , Status Report for the Improvement Programme for Siemens IGBT Modules Contents: 1. Scope and , Temperature and Power Cycling tests 4. Figures on Lifetime and Failure Rate 5. Further goals / under internal discussion Attachments: · Quality Approval Test Specification · Quality Data of IGBT Modules , . Scope and Reliability requirements New technologies for IGBT modules provide the possibility to use


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PDF t1/10 10sec. OF IGBT IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 how can test igbt siemens igbt BSM 75 gb 100 reliability report and tests for failure rate Siemens BSM 50 GB 100 DN1
2001 - calculation of IGBT snubber

Abstract: fairchild nomenclature AN-7520 HGTG30N60B3 HGTG40N60B3 A150 IGBT ac switch circuit mathcad failure analysis IGBT IGBT JUNCTION TEMPERATURE CALCULATION
Text: ) Curve fit vectors for switching loss function Eoff480(I,TJ). I IGBT collector current , Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN-7520 Authors , determining IGBT losses. A math worksheet program such as MathCADTM may be used for this application. The algorithm flow chart is shown in Figure 1. The required IGBT parametric test data is obtained from basic , junction temperature. Eoff(V,I,TJ) Turn-off loss as a function of peak clamp voltage, IGBT collector


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PDF AN-7520 calculation of IGBT snubber fairchild nomenclature AN-7520 HGTG30N60B3 HGTG40N60B3 A150 IGBT ac switch circuit mathcad failure analysis IGBT IGBT JUNCTION TEMPERATURE CALCULATION
2002 - calculation of IGBT snubber

Abstract: IGBT JUNCTION TEMPERATURE CALCULATION failure analysis IGBT IGBT application note HGTG40N60B3 power factor correction boost topology AN-7520 AN75 A150 IGBT snubber
Text: Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN-7520 Authors , describing a numerical algorithm for determining IGBT losses. A math worksheet program such as MathCADTM may be used for this application. The algorithm flow chart is shown in Figure 1. The required IGBT , of peak clamp voltage, IGBT collector current and junction temperature. fs IGBT switching frequency. ka(TJ), kb(TJ), kc(TJ), kd(TJ) Curve fit vectors for switching loss function Eoff480(I,TJ


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PDF AN-7520 calculation of IGBT snubber IGBT JUNCTION TEMPERATURE CALCULATION failure analysis IGBT IGBT application note HGTG40N60B3 power factor correction boost topology AN-7520 AN75 A150 IGBT snubber
Not Available

Abstract: No abstract text available
Text: 85. FIT means one failure per billion hours. 2 9 Failure Rate ( FIT ) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOT15B60D, 600V, 15A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 154 Number of failure 0 1000 hrs 168 / 500 hrs 154 0 1000 hrs 616


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PDF AOT15B60D,
HTGB

Abstract: No abstract text available
Text: 85. FIT means one failure per billion hours. 2 9 Failure Rate ( FIT ) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOK10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 77 Number of failure 0 1000 hrs 168 / 500 hrs 77 0 1000 hrs 308 -


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PDF AOK10B60D, HTGB
Not Available

Abstract: No abstract text available
Text: of the selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate ( FIT ) = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 , AOS Semiconductor Reliability Report AOT5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60


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PDF AOT5B60D,
Not Available

Abstract: No abstract text available
Text: Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate ( FIT ) = Chi x 10 / [2 (N , AOS Semiconductor Reliability Report AOD5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 154 Number of failure 0 1000 hrs 168 / 500 hrs 154 0 1000 hrs 539


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PDF AOD5B60D,
Not Available

Abstract: No abstract text available
Text: product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate ( FIT ) = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 8 MTTF = 10 / FIT = , AOS Semiconductor Reliability Report AOK15B60D, 600V, 15A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , device lifetime in field operation & long term device level reliability can be determined. FIT rate is


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PDF AOK15B60D, 77x1000)
Not Available

Abstract: No abstract text available
Text: 85. FIT means one failure per billion hours. 2 9 Failure Rate ( FIT ) = Chi x 10 / [2 (N) (H , AOS Semiconductor Reliability Report AOT10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT , . FIT rate is calculated by applying the Arrhenius equation with the activation energy of 0.7Ev and 60 , 168 / 500 hrs 77 Number of failure 0 1000 hrs 168 / 500 hrs 77 0 1000 hrs 308 -


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PDF AOT10B60D,
IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 SK0712 IXGP70N33TBM-A DH60-18A VBO19 IXGQ160N30PB
Text: / IGBT ISOPLUS discrete device *) Failure Rate [ FIT ] 125°C, 60% UCL Failure Rate [ FIT ] 90 , FIT : 1 FIT = 1 failure / 109 hrs High Temperature Gate Bias (HTGB) TABLES 3: Failure Modes , discrete device *) Failure Rate [ FIT ] 125°C, 60% UCL Failure Rate [ FIT ] 90°C, 60% UCL Total Lots , QUALITY AND RELIABILITY Failure Modes: Degradation of electrical leakage characteristics due to , . Further information on reliability of power devices is provided on www.ixys.com. Power Cycle Failure


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PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 SK0712 IXGP70N33TBM-A DH60-18A VBO19 IXGQ160N30PB
2010 - FF900R12IP4LD

Abstract: Infineon power diffusion process Infineon diffusion solder copper bond wire infineon B133-H9463-X-X-7600 copper bond wire infineon power cycling
Text: new era in IGBT internal packaging technologies. In order to address new application requirements, as well as to prepare for the next generation of IGBT chips, this set of technologies improves all interconnections within an IGBT module in regard to lifetime. I I I Chip front side: A Copper layer on , the solder joint. .XT technology HAS BEEN DEVELOPED to fit into most of our existing packages as , of Infineon Technologies, if a failure of such components can reasonably be expected to cause the


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Not Available

Abstract: No abstract text available
Text: designs by lowering switch-voltage dropout. An integrated insulated gate bipolar transistor ( IGBT ) driver , Information A. Description/Function: Xenon Photoflash Charger with IGBT Driver and Voltage Monitor B , test are shown in Table 1. Using these results, the Failure Rate ( ) is calculated as follows: = 1 , Temperature Acceleration factor assuming an activation energy of 0.8eV) -9 = 22.8 x 10 = 22.8 F.I.T . (60% confidence level @ 25°C) The following failure rate represents data collected from Maxim’s


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PDF MAX8685AETD+ 1000hrs. C/150Â
2008 - capacitor 1600v Aluminum Electrolytic

Abstract: powerex snubber capacitor
Text: Select Power Film Capacitor Terminations to Fit Application Page of Page 1 of 4 Powered by Select Power Film Capacitor Terminations to Fit Application Jun 1, 2001 12:00 PM By Mark Gebbia , in snubber applications for IGBTs. Present day IGBT collector-to-emitter spacing now ranges from 20 , when mounted directly to the IGBT module. Other physical restraints add to the need for a large , /cpt?action=cpt&title=Select+Power+Film+Capaci. 8/13/2010 Select Power Film Capacitor Terminations to Fit Application Page of Page 2


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2000 - 500 WATT smps using ka3844

Abstract: KA3844 flyback Flyback Switching Power Supply pc817 fairchild KA3844 IGBT 1500V 5A 500 watt power circuit diagram flyback pc817 application note PC817 380vac smps circuit diagram
Text: July, 2000 AN9011 High Input Voltage, Off-line Flyback Switching Power Supply using FSC IGBT , and high cost. FSC developed a more effective solution: a power IGBT rated at 1500V-5A. This , experimental operational characteristics of the IGBT are also explained. Performance in High Input Voltage , secondary feedback loop. The KA3844 PWM IC directly drives the power IGBT . FUSE NTC - + OUTPUT , C6 R4 R5 2 COM 7 R6 PC817 1 R7 KA3844 C11 R10 8 4 IGBT 6


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PDF AN9011 SGL5N150UF) 00-900V, 380Vac. 500V-5A. SGL5N150UF. 500 WATT smps using ka3844 KA3844 flyback Flyback Switching Power Supply pc817 fairchild KA3844 IGBT 1500V 5A 500 watt power circuit diagram flyback pc817 application note PC817 380vac smps circuit diagram
DF10-31S-2DSA

Abstract: transistor free Mitsubishi Electric IGBT MODULES PM150RLA060 igbt testing procedure calculation of IGBT snubber PM450CLA120 pm600cla060 Mitsubishi IPM module PM100RLA120
Text: further, with a corresponding drop in failure rates. Failure rates normally range from several FIT to , Melting) Heat Sink Mounting Failure (Over Stress) Over Voltage Power Device Defect IGBT Chip , Testing 7-5. Failure Analysis 7-6. Derating and Reliability Projections 7-7. Conclusion 8 , Application Note Term Explanation 3. Term Explanation General 1 Symbol IGBT FWDi IPM tdead IPM , the IGBT Low side turn-off to high Side turn-on & High Side turn-off to low side turn-on The


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2013 - Not Available

Abstract: No abstract text available
Text: Type SCD IGBT Snubber Capacitor Modules High dV/dt Direct Mount IGBT Snubber Style SCD offers protection against voltage transients in low to medium current IGBT applications where high dV/dt is encountered. Connect these capacitors from C1 to E2 on a dual IGBT module or from P to N on a six-pack module to eliminate severe voltage transients. Parts ending with Z25 fit IGBTs with 23mm, 25mm and 28mm , - High peak & RMS current capability - Mount directly to the IGBT module - Low inductance <20nH -


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2001 - ECMP80

Abstract: elcon capacitor Elind Power
Text: power capacitor that is designed to fit IGBT terminal spacing for direct mounting. The result is a , capacitors type MP80 metallized polypropylene power supply capacitor A SUPERIOR ALTERNATIVE TO CONVENTIONAL CAPACITORS FOR ACROSS-THE-BUSS POWER APPLICATIONS IGBT mountable SCREW DOWN , terminals instead of lead wires s Compact case sizes/rugged monolithic construction s s IGBT BUSS , , with not more than one failure in each group of 18 tested. Failure is defined as a permanent short or


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2001 - Not Available

Abstract: No abstract text available
Text: capacitors type MP80 metallized polypropylene IGBT mountable power supply capacitor A SUPERIOR ALTERNATIVE TO CONVENTIONAL CAPACITORS FOR ACROSS-THE-BUSS POWER APPLICATIONS SCREW DOWN TERMINALS MP80 NO LEAD WIRES/NO LEAD WIRE INDUCTANCE IGBT The EC MP80 represents the first snubber circuit power capacitor that is designed to fit IGBT terminal spacing for direct mounting. The result is , period of 2,000 hours, with not more than one failure in each group of 18 tested. Failure is defined as


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6MBP20RH060

Abstract: ipm application fuji ipm application note fuji
Text: . (P-side) (1) Amplifier for drive (2) Power suppty under voltage protection (3) IGBT chip over heating , under voltage protection (3) IGBT chip over heating protection (4) Over current protection (5) Alarm , Heating Protection IGBT chips Over Heat Protection Temperature Level TjOH Surface of IGBT 150 - - , Characteristics ( v (Tj=Tc=25°C, Vcc=15V) Items Symbols Conditions min. typ. max. Unit Switching Time ( IGBT , . Unit Junction to Case Thermal Resistance IGBT Rth(j-c) - - 2.0 °C/W FWD RthG-c) - - 3.6 °C/W Case


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PDF 6MBP20RH060 MS6M0386 H04-004-07 H04-004-03 6MBP20RH060. 6MBP20RH060) G005SD7 6MBP20RH060 ipm application fuji ipm application note fuji
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