The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-0 Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

igbt 20A 1200v Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - FGA20N120FTD

Abstract:
Text: FGA20N120FTD tm 1200V , 20A Trench IGBT Features • Field stop trench technology â , 1 www.fairchildsemi.com FGA20N120FTD 1200V , 20A Trench IGBT December 2007 Device Marking , FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V , 20A Trench IGBT Package Marking and , A µC www.fairchildsemi.com FGA20N120FTD 1200V , 20A Trench IGBT Electrical Characteristics , FGA20N120FTD 1200V , 20A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs


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PDF FGA20N120FTD FGA20N120FTD
2007 - FGA20N120

Abstract:
Text: FGA20N120FTD tm 1200V , 20A Trench IGBT Features · Field stop trench technology General , www.fairchildsemi.com FGA20N120FTD 1200V , 20A Trench IGBT December 2007 Device Marking Device Package , www.fairchildsemi.com FGA20N120FTD 1200V , 20A Trench IGBT Package Marking and Ordering Information Symbol , FGA20N120FTD 1200V , 20A Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output , ] 20 www.fairchildsemi.com FGA20N120FTD 1200V , 20A Trench IGBT Typical Performance


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PDF FGA20N120FTD FGA20N120FTD FGA20N120 FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A 12v igbt 20a igbt 20A 1200v
2010 - fga20s120m

Abstract:
Text: FGA20S120M tm 1200V , 20A ShortedAnodeTM IGBT Features General Description · High speed , www.fairchildsemi.com FGA20S120M 1200V , 20A ShortedAnodeTM IGBT April 2010 Device Marking Device Package , FGA20S120M 1200V , 20A ShortedAnodeTM IGBT Package Marking and Ordering Information Figure 1. Typical , Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA20S120M 1200V , 20A ShortedAnodeTM IGBT , www.fairchildsemi.com FGA20S120M 1200V , 20A ShortedAnodeTM IGBT Typical Performance Characteristics Figure 13


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PDF FGA20S120M fga20s120m 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a 12v igbt 20a igbt 20A 1200v
1999 - 20A igbt

Abstract:
Text: 900V, VP = 1200V Rg = 5 , VGE = + 15V to 0 V TJ = 125°C VCC = 600V, Ic = 20A IGBT Rg = 5 , TJ = 125°C VCC = 600V, Ic = 20A IGBT Rg = 5 , Measured 5 mm from the package SCSOA Short Circuit Safe , leaded TO247 package. C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 3.07V VGE = 15V , 1200V , TJ = 125°C - V IC = 20A - IC = 20A , TJ = 125°C ±100 nA VGE = ±20V VGE(th) ICES V FM IGES , Features · Ultrafast npt IGBT Technology · 10 µs Short Circuit capability · Square RBSOA. · New Generation


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PDF IRGP20B120UD-E 20KHz 20A igbt igbt 20A 1200v igbt 1200V 20A igbt 40a 600v DIODE 20A 600V current diode 600v 20a IGBT IGBT 120A 1200V 600v 20a diode diode 20khz
2007 - Not Available

Abstract:
Text: C = 250µA VGE, I C = 3mA (25-125°C) = = = = = 50V, IC = 20A , PW = 0V, V CE = 1200V , TJ , Number = 1200V ) IGBT ) Special Option Circuit Configuration (20 Speed/ rating Current code Essential , 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch , approved (File E78996) VCES = 1200V IC = 40A T C = 25°C Benefits • Optimized for Welding, UPS , Maximum Power Dissipation (only IGBT ) Document Number: 93588 @ TC = 25°C 240 @ TC = 100Â


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PDF 20MT120UF E78996) 20KHz 08-Mar-07
2008 - ir igbt 1200V 40A

Abstract:
Text: Number = 1200V ) IGBT ) Special Option Circuit Configuration (20 Speed/ rating Current code Essential , 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features · UltraFast Non Punch Through , E78996) VCES = 1200V IC = 40A T C = 25°C Benefits · Optimized for Welding, UPS and SMPS , Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation (only IGBT , = = 15V, I C = 20A 15V, I C = 40A 15V, I C = 20A T J = 125°C 15V, I C = 40A T J = 125°C 15V


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PDF 20MT120UF E78996) 20KHz 12-Mar-07 ir igbt 1200V 40A 20MT120UF E78996 bridge
2006 - Not Available

Abstract:
Text: FGH40N120AN 1200V NPT IGBT September 2007 ® FGH40N120AN 1200V NPT IGBT Features · High , www.fairchildsemi.com FGH40N120AN Rev. A1 FGH40N120AN 1200V NPT IGBT Package Marking and Ordering Information , www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output , ] Gate-Emitter Voltage, VGE [V] 3 FGH40N120AN Rev. A1 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT , FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss


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PDF FGH40N120AN FGH40N120AN
2008 - tyco igbt module 25A

Abstract:
Text: covers a broad power spectrum, ranging from 5A to 450A at 600V and 1200V . Vincotech Fast Power Modules are available in 2 different standard housings for up to 100A at 600V and 1200V and are suitable for switching frequencies of up to 400kHz at 600V and 50kHz at 1200V . fastPACK 0 H 2nd gen W W , ) V23990-P629-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 30A , ) V23990-P729-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V P723-P729 Current


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PDF Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
2006 - FGL40N120AND

Abstract:
Text: FGL40N120AND 1200V NPT IGBT Features Description · High speed switching Employing NPT , FGL40N120AND Rev. A 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT January 2006 Device , FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol Parameter VFM , 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT IGBT Typical , ] Collector Current, IC [A] 5 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical


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PDF FGL40N120AND O-264 FGL40N120AND IGBT 200A 1200V application induction heating 100W UPS igbt for induction heating
2008 - FGL40N120AND

Abstract:
Text: tm FGL40N120AND 1200V NPT IGBT Features Description · High speed switching Employing , FGL40N120AND Rev. A2 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT February 2008 Device , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT , FGL40N120AND 1200V NPT IGBT tf t(o °ff T 1 ± G V C ) d Typical Performance Characteristics


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PDF FGL40N120AND O-264 FGL40N120AND
2005 - FAIRCHILD FGL40N120AND

Abstract:
Text: FGL40N120AND 1200V NPT IGBT Features Description · High speed switching Employing NPT , FGL40N120AND Rev. A 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT February 2005 Device , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol , FGL40N120AND 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT IGBT Typical , Current, IC [A] Collector Current, IC [A] www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT


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PDF FGL40N120AND O-264 FGL40N120AND FAIRCHILD FGL40N120AND igbt 1200V 40A short circuit igbt 40A 600V
2006 - FGL40N120AND

Abstract:
Text: FGL40N120AND 1200V NPT IGBT May 2007 FGL40N120AND 1200V NPT IGBT Features · High speed , FGL40N120AND Rev. A1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical Performance , FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss , FGL40N120AND 1200V NPT IGBT Mechanical Dimensions TO-264 6.00 ±0.20 20.00 ±0.20 (4.00) (8.30) (8.30 , FA Home >> Find products >> FGL40N120AND 1200V NPT IGBT Contents ·General description


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PDF FGL40N120AND FGL40N120AND O-264 FGL40N120ANDTU
2000 - mosfet 1200V 40A

Abstract:
Text: Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through (NPT). Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA RANGE (D-PAK) 1 ~ 6A , available. - HGTG40N60C3 HGT1Y40N60C3D* On the reverse side, you'll find 1200V IGBT Selection , requirements. You provide the challenges, we'll provide the solutions. 1200V IGBT SELECTION GUIDE PACKAGE , high voltage switch? TO-268AA Solution - Intersil has a 1200V IGBT family featuring: · NPT


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PDF LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTP20N60A4 HGTD3N60A4S HGTG11N120CND MOSFET 1200v 30a HGTD7N60B3S HGTD7N60A4S
1999 - ic60a

Abstract:
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology · 40% lower Eoff compared to previous generation , product spectrum and PSpice Models : http://www.infineon.com/ igbt / Type SGP15N120 SGW15N120 Maximum , current, tp limited by Tjmax Turn off safe operating area VCE 1200V , Tj 150°C Gate-emitter voltage , time2 VGE = 15V, 100V VCC 1200V , Tj 150°C Power dissipation TC = 25°C Operating junction and storage , tSC 10 µs VGE EAS ±20 85 V mJ ICpuls Symbol VCE IC 30 15 52 52 Value 1200 Unit V A VCE 1200V 1200V IC


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PDF SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 ic60a
2008 - igbt 1200V 40A

Abstract:
Text: tm FGL40N120AND 1200V NPT IGBT Features Description · High speed switching Employing , FGL40N120AND Rev. A2 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT February 2008 Device , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT , FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics FGL40N120AND 1200V NPT IGBT Typical


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PDF FGL40N120AND O-264 FGL40N120AND igbt 1200V 40A FAIRCHILD FGL40N120AND igbt 1200V 40A short circuit IGBT 200A 1200V application induction heating igbt for induction heating igbt for induction heating ic igbt 40a 600v IGBT 600V 40A igbt for HIGH POWER induction heating
JESD-022

Abstract:
Text: SGW25N120 Fast IGBT in NPT-technology · 40% lower Eoff compared to previous generation · Short , compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/ igbt / Type SGW25N120 , collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V , Tj 150°C Gate-emitter , withstand time2 VGE = 15V, 100V VCC 1200V , Tj 150°C Power dissipation TC = 25°C Operating junction and , 1200V IC 25A Eoff 2.9mJ Tj 150°C Marking Package C G E PG-TO-247-3 SGW25N120 PG-TO


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PDF SGW25N120 SGW25N120 641-SGW25N120E8161 SGW25N120E8161 JESD-022 igbt sgw25n120
2009 - gp15n120

Abstract:
Text: PSpice Models : http://www.infineon.com/ igbt / VCE IC Eoff Tj Marking SGP15N120 1200V 15A 1.5mJ 150°C GP15N120 SGW15N120 1200V 15A 1.5mJ 150°C Type Package , SGP15N120 SGW15N120 Fast IGBT in NPT-technology C · 40% lower Eoff compared to previous , mJ tSC 10 µs Ptot 198 W -55.+150 °C VCE 1200V , Tj 150°C IC = 15A, VCC = 50V, RGE = 25, start at Tj = 25°C Short circuit withstand time2 VGE = 15V, 100V VCC 1200V , Tj


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PDF SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 GP15N120 gp15n120 SGP15N120 SGW15N120 Diode 1S 2473 ir igbt 1200V 40A PG-TO-220-3-1 PG-TO-247-3
2006 - 200v dc motor igbt

Abstract:
Text: FGL40N120AND 1200V NPT IGBT Features Description · High speed switching Employing NPT , FGL40N120AND Rev. A1 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT May 2007 Device , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT , www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics FGL40N120AND 1200V NPT


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PDF FGL40N120AND O-264 200v dc motor igbt induction heating circuits igbt 1200V 40A short circuit igbt 1200V 20A igbt 1200V 40A IGBT control circuit igbt for HIGH POWER induction heating igbt for induction heating igbt for induction heating ic FGL40N120AND
2000 - HGTG20N60A4D

Abstract:
Text: 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 IGBT Selection Guide 1200V , IGBT Selection Guide TM 600V FAMILIES (NOTE 1) IC RATED OR IC AT 110oC TO-220AB TO , HGTP12N60C3 2.0V 275ns 20A HGT1S12N60A4S 2.7V 95ns HGTG12N60A4 2.7V 95ns HGT1S12N60C3S 2.0V , 2000 IGBT Selection Guide 600V FAMILIES WITH AN INTEGRATED REVERSE DIODE IC RATED OR IC AT , ) HGTP3N60B3D 2.1V 175ns 3A TO-220AB HGT1S12N60C3DS 2.0V 275ns HGTG12N60C3D 2.0V 275ns 20A


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PDF 110oC O-220AB O-263AB HGTD3N60A4S 100ns HGTP3N60A4 HGT1S3N60A4S HGTD3N60B3S HGTG20N60A4D HGTD3N60A4S HGT1Y30N120CN HGTG30N60A4 HGT1S3N60B3S HGT1Y40N60C3D HGTD3N60B3S TO220AB IGBT HGTD7N60A4S HGTD7N60B3S
2007 - gp15n120

Abstract:
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology · 40% lower Eoff compared to previous generation , and PSpice Models : http://www.infineon.com/ igbt / Type SGP15N120 SGW15N120 Maximum Ratings Parameter , Turn off safe operating area VCE 1200V , Tj 150°C Gate-emitter voltage Avalanche energy, single pulse , for 10s Tj , Tstg -55.+150 260 °C 2 VCE 1200V 1200V IC 15A 15A Eoff 1.5mJ 1.5mJ Tj 150 , , 100V VCC 1200V , Tj 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000


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PDF SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3-1 SGW15N120 gp15n120
2007 - Not Available

Abstract:
Text: °C VCC = 960V VP = 1200V RG = 22 VGE = 15V to 0 Inverter IGBT Irr Diode Peak Rev. Recovery , Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE Features · Low VCE (on) Non Punch Through IGBT Technology · Low Diode VF · 10s Short Circuit Capability · Square RBSOA · HEXFRED Antiparallel , Ceramic DBC Substrate · Low Stray Inductance Design · TOTALLY LEAD-FREE VCES = 1200V IC = 13A @ TC , Pulsed Pulsed One IGBT 50/60Hz sine pulse 25°C / 80°C 25°C 25°C 25°C 80°C 20 / 13 40 40 88 1600 13


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PDF I27278 GB10RF120K E78996 12-Mar-07
2006 - G15N120

Abstract:
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology · 40% lower Eoff compared to previous generation , Complete product spectrum and PSpice Models : http://www.infineon.com/ igbt / Type SGP15N120 SGW15N120 , collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V , Tj 150°C Gate-emitter , , 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55.+150 260 °C 2 VCE 1200V 1200V IC 15A 15A , W VGE = 15V, 100V VCC 1200V , Tj 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short


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PDF SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 G15N120
1999 - G07N120

Abstract:
Text: SGP07N120 Fast IGBT in NPT-technology · lower Eoff compared to previous generation · Short , ://www.infineon.com/ igbt / Type SGP07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V , Tj = 25°C Short circuit withstand time2 VGE = 15V, 100V VCC 1200V , Tj 150°C Power dissipation TC = , 7.9 27 27 Value 1200 Unit V A VCE 1200V IC 8A Eoff 0.7mJ Tj 150°C Marking G07N120 Package Ordering


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PDF SGP07N120 PG-TO-220-3-1 O-220AB) SGP07N120 G07N120 Q67040-S4272
1999 - g25n120

Abstract:
Text: SGW25N120 Fast IGBT in NPT-technology · 40% lower Eoff compared to previous generation · Short , compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/ igbt / Type SGW25N120 , collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V , Tj 150°C Gate-emitter , withstand time2 VGE = 15V, 100V VCC 1200V , Tj 150°C Power dissipation TC = 25°C Operating junction and , 1200V IC 25A Eoff 2.9mJ Tj 150°C Marking Package Ordering Code C G E PG-TO-247-3-1 (TO


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PDF SGW25N120 SGW25N120 g25n120 PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC M/250w smps inverter circuits Q67040-S4277
1999 - ir igbt 1200V 40A

Abstract:
Text: SGB15N120 Fast IGBT in NPT-technology · 40% lower Eoff compared to previous generation · Short , PSpice Models : http://www.infineon.com/ igbt / Type SGB15N120 Maximum Ratings Parameter Collector-emitter , safe operating area VCE 1200V , Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15A , -55.+150 220 °C 2 C G E P-TO-263-3-2 (D²-PAK) (TO-263AB) VCE 1200V IC 15A Eoff 1.5mJ , , 100V VCC 1200V , Tj 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000


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PDF SGB15N120 SGB15N120 ir igbt 1200V 40A G15N120
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