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Part Manufacturer Description Datasheet Download Buy Part
LTC4416IMS-1#TR Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit
LTC6102CDD-1#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, PDSO8, 3 X 3 MM, PLASTIC, MO-229WEED-1, DFN-8, Analog IC:Other
LTC6102HMS8-1#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, PDSO8, PLASTIC, MSOP-8, Analog IC:Other
LTC2910HGN Linear Technology IC 8-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16, 0.150 INCH, PLASTIC, SSOP-16, Power Management Circuit
LT1460BIS8-10#TRPBF1460 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, SOP-8, Voltage Reference
LT1513CR-2 Linear Technology IC 5.4 A BATTERY CHARGE CONTROLLER, 580 kHz SWITCHING FREQ-MAX, PSSO7, PLASTIC, D2PAK-7, Switching Regulator or Controller

ic tea2025b Datasheets Context Search

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2012 - IC TEA2025 output

Abstract: tea2025 application TEA2025B applications TEA2025
Text: Description The TEA2025B is a monolithic integrated circuit housed in the 12+2+2 PowerDIP16 package , )- bs O Table 1. FEED GND Device summary Part number Package TEA2025B t(s , 2.5 Application information Pop noise Most amplifiers similar to the TEA2025B need external , . Figure 11. Internal resistor (s) ct The TEA2025B requires less components as these resistors (800 , of supply voltage with capacitors as close as possible to the supply IC pin. The low value


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PDF TEA2025 TEA2025B PowerDIP16 IC TEA2025 output tea2025 application TEA2025B applications TEA2025
2012 - tea2025 application

Abstract: IC TEA2025 TEA2025B applications TEA2025B - STEREO AUDIO AMPLIFIER - STMicroelectronics 1523 IC circuit diagram tea2025b TEA2025 ic tea2025 audio amplifier TEA2025B CIRCUIT APPLICATION bootstrap
Text: PowerDIP16 Description The TEA2025B is a monolithic integrated circuit housed in the 12+2+2 PowerDIP16 , . Table 1. Device summary Package PowerDIP16 (12+2+2) Part number TEA2025B Figure 1. Block , TEA2025 Application information 2.5 Pop noise Most amplifiers similar to the TEA2025B need , distortion. Figure 11. Internal resistor The TEA2025B requires less components as these resistors (800 ohm , supply IC pin. The low value (polyester) capacitors must have suitable temperature and frequency


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PDF TEA2025 PowerDIP16 TEA2025B PowerDIP16 TEA2025B tea2025 application IC TEA2025 TEA2025B applications TEA2025B - STEREO AUDIO AMPLIFIER - STMicroelectronics 1523 IC circuit diagram TEA2025 ic tea2025 audio amplifier TEA2025B CIRCUIT APPLICATION bootstrap
SGS M114S

Abstract: M114S TDA 931 PS TDA7284 equivalent 27mhz remote control transmitter circuit FOR CAR TDA2003 equivalent TBA820M equivalent TDA73XX TOKO kacs 10.7MHz fm coil tda7374
Text: . 943 TEA2025B 2+2W Stereo Amplifier 949 TEA6420 Bus-Controlled Audio Matrix TEB1033 , MINIDIP POWERDIP (8+8) POWERDIP (8+8) FINDIP MULTIWATT 11 TDA2007 TDA2007A TDA2008 TEA2025B , . SIP9 SO-8 SO-16 DIP14- SO-14 TDA7285 TEA2025B Complete Stereo Cassette P la y e r , SWITCHING REGULATOR IC FAMILY THE TRANSPUTER DATABOOK THE TRANSPUTER DEVELOPMENT AND iq SYSTEMS DATABOOK , BDX53A BDX53B BDX53C V ceo VcBO lc IlFE @ Ic VcE (V) Complementary (V) (A


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TDA0161 equivalent

Abstract: 1N3393 2N4895 inmos transputer reference manual Transistor morocco mje13007 sgs 2n3055 ua776mh ST90R9 BYT30 byt301000
Text: FOR TELEPHO NE S ET APPLICATIO NS DEDICATED M CU FAMILY FOR TV /M O N ITO R APPLICATIONS Z80 M IC R


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STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: . . .361 Heat Sinks . . . . . . . . .350 IC Protectors . . . . . . .350 IC Sockets . . . . . . . . , TEA2025B 0.56 TEA2037 5.01 TEA2037A 5.01 TEA2261 5.09 TEA2262 3.85 TEA3718 3.49 TEA3718DP 3.49 TEA3718SDP


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PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Not Available

Abstract: No abstract text available
Text: Pattern Example 0.45mm 0.4mm IC 100 mA RN1114MFV PC (Note 1) 150 mW to 111M8FV , RN1114MFV VEB = 5V, IC = 0 0.35 0.65 RN1115MFV VEB = 6V, IC = 0 0.37 0.71 VEB = 7V, IC = 0 0.36 0.68 RN1117MFV VEB = 15V, IC = 0 0.78 1.46 RN1118MFV Emitter cut-off current Unit VEB = 25V, IC = 0 0.33 0.63 RN1116MFV IEBO mA RN1114MFV 50 DC current gain to 16MFV, 18MFV VCE = 5V, IC = 10mA hFE 30 RN1117MFV


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PDF RN1114MFVâ RN1118MFV RN1114MFV RN1115MFV RN1116MFV RN1117MFV RN2114MFV RN2118MFV RN1114MFV
2009 - RN1321A

Abstract: RN2327A RN2326A RN2325A RN2324A RN2323A RN2322A RN2321A RN1327A 2327A
Text: -5 VEBO -6 RN2327A IC Collector current Collector power dissipation Junction , -0.682 -0.35 -0.65 RN2321A RN2322A VEB =-10V, IC = 0 RN2323A Emitter cut-off current RN2324A IEBO RN2325A VEB = -5V, IC = 0 RN2326A VEB = -6V, IC = 0 RN2327A -0.378 , ) VCE = -1V, IC =-50mA IC = -50mA, IB =-2mA IC = -50mA, IB =-1mA VCE =-0.2V, IC =-50mA VCE = -5V, IC = -0.1mA RN2327A Transition frequency mA RN2325A Input voltage (OFF


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PDF RN2321ARN2327A RN2321A RN2322A RN2323A RN2324A RN2325A RN2326A RN2327A RN1321A RN1327A RN2327A RN2324A RN1327A 2327A
2010 - RN1114MFV

Abstract: RN1115MFV RN1116MFV RN1117MFV RN1118MFV RN2114MFV RN2118MFV
Text: Pattern Example 0.45mm 0.4mm IC 100 mA RN1114MFV PC (Note 1) 150 mW to 111M8FV , 50V, IE = 0 100 VCE = 50V, IB = 0 500 VEB = 5V, IC = 0 0.35 0.65 RN1115MFV VEB = 6V, IC = 0 0.37 0.71 VEB = 7V, IC = 0 0.36 0.68 RN1117MFV VEB = 15V, IC = 0 0.78 1.46 RN1118MFV VEB = 25V, IC = 0 0.33 0.63 50 , 16MFV, 18MFV hFE VCE = 5V, IC = 10mA RN1117MFV Collector-emitter saturation voltage


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PDF RN1114MFVRN1118MFV RN1114MFV RN1115MFV RN1116MFV RN1117MFV RN1118MFV RN2114MFV RN2118MFV RN1114MFV RN1115MFV RN1118MFV RN2118MFV
RN1114MFV

Abstract: RN1115MFV RN1116MFV RN1117MFV RN1118MFV RN2114MFV RN2118MFV
Text: 0.45mm 0.4mm IC 100 mA RN1114MFV PC (Note1) 150 mW ~111M8FV Tj 150 °C , 50V, IE = 0 100 VCE = 50V, IB = 0 500 VEB = 5V, IC = 0 0.35 0.65 RN1115MFV VEB = 6V, IC = 0 0.37 0.71 VEB = 7V, IC = 0 0.36 0.68 RN1117MFV VEB = 15V, IC = 0 0.78 1.46 RN1118MFV VEB = 25V, IC = 0 0.33 0.63 50 , , 18MFV hFE VCE = 5V, IC = 10mA RN1117MFV Collector-emitter saturation voltage Input


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PDF RN1114MFVRN1118MFV RN1114MFV RN1115MFV RN1116MFV RN1117MFV RN1118MFV RN2114MFV RN2118MFV RN1114MFV RN1115MFV RN1118MFV RN2118MFV
Not Available

Abstract: No abstract text available
Text: Equivalent Circuit and Bias Resister Values 0.45mm 0.4mm IC 100 mA RN1114MFV PC (Note 1 , 50V, IE = 0 ― ― 100 VCE = 50V, IB = 0 ― ― 500 VEB = 5V, IC = 0 0.35 ― 0.65 RN1115MFV VEB = 6V, IC = 0 0.37 ― 0.71 VEB = 7V, IC = 0 0.36 ― 0.68 RN1117MFV VEB = 15V, IC = 0 0.78 ― 1.46 RN1118MFV VEB = 25V, IC = 0 0.33 , , 18MFV hFE ― VCE = 5V, IC = 10mA RN1117MFV Collector-emitter saturation voltage Input


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PDF RN1114MFVâ RN1118MFV RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN2114MFV RN2118MFV RN1114MFV
Not Available

Abstract: No abstract text available
Text: ) 150 mW Tj 150 °C Tstg −55 to 150 °C IC Junction temperature −10 â , ˆ’0.074 −0.138 RN2101MFV 30 RN2102MFV 50 RN2101MFV RN2102MFV VEB = −10 V, IC = 0 RN2103MFV Emitter cutoff current RN2104MFV IEBO RN2105MFV VEB = −5 V, IC = 0 RN2103MFV DC current gain RN2104MFV VCE = −5 V, IC = −10 mA hFE 80 80 RN2106MFV 80 RN2101MFV to 2106MFV IC = −5 mA, IB = −0.5 mA VCE (sat) −0.1 −0.3 RN2101MFV â


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PDF RN2101MFVâ RN2106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN1101MFV RN1106MFV
2010 - RN1325A

Abstract: RN1321A RN1322A RN1323A RN1324A RN1326A RN1327A RN2321A RN2327A
Text: Emitter-base voltage 10 5 IC RN1325A, 1326A VEBO 500 mA PC 100 mW Tj 150 , 0.71 0.365 0.682 0.35 0.65 RN1321A RN1322A VEB = 10V, IC = 0 RN1323A Emitter cut-off current RN1324A IEBO RN1325A VEB = 5V, IC = 0 RN1326A RN1327A VEB = 6V, IC = 0 0.378 65 100 140 140 RN1326A 140 , (OFF) VCE = 1V, IC = 50mA IC = 50mA, IB = 2mA IC = 50mA, IB = 1mA VCE = 0.2V


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PDF RN1321ARN1327A RN1321A RN1322A RN1323A RN1324A RN1325A RN1326A RN1327A RN2321A RN2327A RN1324A RN1327A RN2327A
RN1321A

Abstract: RN1322A RN1323A RN1324A RN1325A RN1326A RN1327A RN2321A RN2327A
Text: IC RN1325A, 1326A VEBO 500 mA PC 100 mW Tj 150 °C Tstg -55~150 , 0.682 0.35 0.65 RN1321A RN1322A VEB = 10V, IC = 0 RN1323A Emitter cut-off current RN1324A IEBO RN1325A VEB = 5V, IC = 0 RN1326A RN1327A VEB = 6V, IC = 0 0.378 65 , RN1324A RN1325A, 1326A hFE VCE (sat) VI (ON) VI (OFF) VCE = 1V, IC = 50mA IC = 50mA, IB = 2mA IC = 50mA, IB = 1mA VCE = 0.2V, IC = 50mA VCE = 5V, IC = 0.1mA


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PDF RN1321ARN1327A RN1321A RN1322A RN1323A RN1324A RN1325A RN1326A RN1327A RN2321A RN2327A RN1324A RN1327A RN2327A
2009 - L332

Abstract: No abstract text available
Text: Rating Unit VCBO 20 V VCEO 20 V 10 VEBO 5 V IC RN1101CT ro 1106CT , RN1101CT to 1106CT RN1101CT RN1102CT Emitter cut-off current RN1103CT RN1104CT VEB = 10 V, IC = 0 IEBO RN1105CT VEB = 5 V, IC = 0 RN1106CT DC current gain Collector-emitter , (sat) VI (ON) VI (OFF) Cob R1 R1/R2 RN1106CT VCE = 5 V, IC = 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 0.1 mA VCB = 10 V, IE = 0, f = 1 MHz


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PDF RN1101CT RN1106CT RN1101CT RN1102CT RN1103CT RN1104CT RN1105CT RN2101CT RN2106CT L332
Not Available

Abstract: No abstract text available
Text: °C Tstg −55~150 °C IC Collector power dissipation Junction temperature VEBO , ~2966FS RN2961FS RN2962FS VEB = −10 V, IC = 0 RN2963FS Emitter cut-off current RN2964FS IEBO RN2965FS VEB = −5 V, IC = 0 RN2966FS RN2963FS DC current gain RN2964FS , RN2965FS R1/R2 RN2966FS VCE = −5 V, IC = −10 mA IC = −5 mA, IB = −0.25 mA VCE = −0.2 V, IC = −5 mA VCE = −5 V, IC = −0.1 mA VCB = −10 V, IE = 0, f = 1 MHz ⎯ â


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PDF RN2961FS RN2966FS RN2962FS RN2963FS RN2964FS RN2965FS RN1961FS RN1966FS
Not Available

Abstract: No abstract text available
Text: °C IC RN2961CT to 2966CT −10 6 PC (Note1) Note1: Total rating, mounted on , 2966CT RN2961CT RN2962CT VEB = −10 V, IC = 0 RN2963CT Emitter cut-off current RN2964CT IEBO RN2965CT VEB = −5 V, IC = 0 RN2966CT RN2963CT DC current gain RN2964CT , RN2965CT R1/R2 RN2966CT VCE = −5 V, IC = −10 mA IC = −5 mA, IB = −0.25 mA VCE = −0.2 V, IC = −5 mA VCE = −5 V, IC = −0.1 mA VCB = −10 V, IE = 0, f = 1 MHz ⎯ â


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PDF RN2961CT RN2966CT RN2962CT RN2963CT RN2964CT RN2965CT RN1961CT RN1966CT
Not Available

Abstract: No abstract text available
Text: ˆ’50 V RN2101ACT to 2104ACT Emitter-base voltage RN2105ACT, 2106ACT −10 −5 V IC , RN2102ACT VEB = −10 V, IC = 0 RN2103ACT Emitter cut-off current RN2104ACT IEBO RN2105ACT VEB = −5 V, IC = 0 RN2106ACT RN2103ACT DC current gain RN2104ACT hFE RN2101ACT , capacitance RN2101ACT to 2106ACT VI (OFF) Cob RN2103ACT Input resistor R1 VCE = −5 V, IC = −10 mA IC = −5 mA, IB = −0.5 mA IC = −5 mA, IB = −0.25 mA VCE = −0.2 V, IC = â


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PDF RN2101ACT RN2106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN1101ACT RN1106ACT
2011 - DFN3020

Abstract: No abstract text available
Text: TRANSISTOR COMBINATION Features and Benefits NPN Transistor · BVCEO > 80V · IC = 3.5A Continuous , PNP Transistor · BVCEO > -70V · IC = -2.5A Continuous Collector Current · Low Saturation Voltage , Current Continuous Collector Current Base Current (Notes 4 & 7) (Notes 5 & 7) Symbol VCBO VCEO VEBO ICM IC , Thermal Characteristics 10 - IC Collector Current (A) IC Collector Current (A) 1 1 DC 1s , Test Condition IC = 100µA IC = 10mA IE = 100µA VCB = 80V VEB = 6V VCE = 65V IC = 10mA, VCE = 2V IC =


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PDF ZXTC6720MC 185mV -220mV DS31929 DFN3020
Not Available

Abstract: No abstract text available
Text: V 5 IC RN1101CT ro 1106CT 50 mA PC 50 mW Tj 150 °C Tstg −55 to , RN1102CT VEB = 10 V, IC = 0 RN1103CT Emitter cut-off current RN1104CT IEBO RN1105CT VEB = 5 V, IC = 0 RN1106CT RN1103CT DC current gain RN1104CT Collector-emitter saturation , RN1106CT VCE = 5 V, IC = 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = , 0.0468 0.0562 0.08 2 nA 0.1 0.12 2009-04-13 RN1101CT ~ RN1106CT IC - VI(ON


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PDF RN1101CT RN1106CT RN1101CT RN1102CT RN1103CT RN1104CT RN1105CT RN2101CT RN2106CT
Not Available

Abstract: No abstract text available
Text: temperature Storage temperature range Note: −10 −5 V IC Collector current Collector , 2106CT RN2101CT RN2102CT VEB = −10 V, IC = 0 RN2103CT Emitter cut-off current RN2104CT IEBO RN2105CT VEB = −5 V, IC = 0 RN2106CT RN2103CT DC current gain RN2104CT , RN2105CT R1/R2 RN2106CT VCE = −5 V, IC = −10 mA IC = −5 mA, IB = −0.25 mA VCE = −0.2 V, IC = −5 mA VCE = −5 V, IC = −0.1 mA VCB = −10 V, IE = 0, f = 1 MHz ⎯ â


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PDF RN2101CT RN2106CT RN2101CT RN2102CT RN2103CT RN2104CT RN2105CT RN1101CT RN1106CT
2011 - Not Available

Abstract: No abstract text available
Text: €¢ IC = 3.5A Continuous Collector Current • Low Saturation Voltage (185mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -70V • IC = -2.5A , Current IC NPN 100 80 7 5 3.5 4 PNP -70 -70 -7 -3 -2.5 -3 Unit V A 1 IB , active die Single Pulse, Tamb=25° C 0.01 0.1 1ms 100us 1 10 100 - IC Collector Current (A) IC Collector Current (A) 10 1 DC 1s VCE(SAT) 0.1 Limited 100ms


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PDF ZXTC6720MC 185mV -220mV DS31929
Not Available

Abstract: No abstract text available
Text: Q1 V IC Collector current Collector power dissipation VEBO 6 −80 mA PC (Note , , IC = 0 RN2903AFS Emitter cutoff current RN2904AFS IEBO RN2905AFS VEB = −5 V, IC = 0 , 2906AFS VI (OFF) Cob RN2903AFS Input resistor R1 VCE = −5 V, IC = −10 mA IC = −5 mA, IB = −0.5 mA IC = −5 mA, IB = −0.25 mA VCE = −0.2 V, IC = −5 mA VCE = −5 V, IC = −0.1 mA VCB = −10 V, IE = 0, f = 1 MHz ⎯ RN2901AFS to 2904AFS Resistor ratio


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PDF RN2901AFS RN2906AFS RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN1901AFS RN1906AFS
2011 - IC 630

Abstract: No abstract text available
Text: TRANSISTOR COMBINATION Features and Benefits NPN Transistor · BVCEO > 50V · IC = 4A Continuous Collector , Transistor · BVCEO > -40V · IC = -3A Continuous Collector Current · Low Saturation Voltage (-220mV max @ -1A , Continuous Collector Current Base Current (Notes 4 & 7) (Notes 5 & 7) Symbol VCBO VCEO VEBO ICM IC IB NPN 100 , Thermal Characteristics 10 10 1 VCE(SAT) - IC Collector Current (A) IC Collector Current (A , 100 220 300 320 1.00 1.07 20 Unit V V V nA nA nA Test Condition IC = 100µA IC = 10mA IE = 100µA VCB =


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PDF ZXTC6719MC 100mV -220mV DS31928 IC 630
2011 - Not Available

Abstract: No abstract text available
Text: €¢ IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -40V • IC = -3A Continuous , Peak Pulse Current Continuous Collector Current (Notes 4 & 7) (Notes 5 & 7) Base Current IC , One active die Single Pulse, Tamb=25° C 0.01 0.1 1ms 1 100us 10 100 - IC Collector Current (A) IC Collector Current (A) 10 1 DC VCE(SAT) 0.1 1s Limited


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PDF ZXTC6719MC 100mV -220mV DS31928
1995 - ztx1056A

Abstract: BF600 ztx1056 DSA003763
Text: IC 3 A Base Current IB 500 mA Ptot 1 W Operating and Storage , Voltage VCEO Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 310 V IC =100µA 200 310 V IC =100µA 160 190 V IC =10mA 0.8 0.7 0.8 +25C 0.7 0.6 0.6 0.5 310 V IC =100µA, VEB=1V 5 8.8 V 0.3 0.2 0.1 0.1 IE , 100mA 1A 10A IC-Collector Current VCE(sat) v IC VCE(sat) v IC VEB=4V Collector


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PDF ZTX1056A 100ms ZTX1056A 41E-12 0E-13 0E-10 1E-12 6E-12 800E-12 BF600 ztx1056 DSA003763
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