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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1638HS#TRPBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDSO14, 0.150 INCH, LEAD FREE, PLASTIC, SOP-14, Operational Amplifier
LT1639IN#TR Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP14, 0.300 INCH, PLASTIC, DIP-14, Operational Amplifier
LT1639IN#TRPBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP14, 0.300 INCH, LEAD FREE, PLASTIC, DIP-14, Operational Amplifier
LT1638HS#PBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDSO14, 0.150 INCH, LEAD FREE, PLASTIC, SOP-14, Operational Amplifier
LT1055MH Linear Technology IC OP-AMP, 1200 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1058ACJ Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 5 MHz BAND WIDTH, CDIP14, 0.300 INCH, HERMETIC SEALED, CERDIP-14, Operational Amplifier

ic 1200 p 60 Datasheets Context Search

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s5j53

Abstract: S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
Text: A B O N D IN G T E M R E S U P O LY IN S IL IC O N LA T O , GT50J102 GT25Q102 VCES (V) max IC (A) DC max 600 PC (W) max 600 1200 tr (µs) typ , Valtage Resonance Waveform 100 V to 120 V VCES = 900 V, 1000 V IC = 15 A, 60 A IC IC VCE VCES = 1200 V, 1500 V VCE 200 V to 240 V IC = 40 A Current Resonance Waveform VCES = , GT60N321 I 0.4 2.8 15 V / 60 A TO-3P (LH) 1200 V / 40 A I 0.72(typ.) 3.6 15 V


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PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: Obsolete Replacements VCES (V) IC (A) DC ­ ­ ­ 900 60 GT60M303 ­ ­ ­ 900 60 GT60M303 1200 , + p + p Collector p + Collector Rn- (MOD) S IL IC O N LA T S U P O LY IN , Voltage Resonance Waveform 100 V to 120 V VCES = 900 V to 1000 V IC = 15 A to 60 A IC IC VCES = 1200 V to 1500 V IC = 40 A VCE 200 V to 240 V VCE Waveform Current Resonance , 60 900 900 40 900 40 1200 39 1200 39 1500 40 1500 40 800 50 900 50 1200 50 1400


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PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: + p + p Collector p + Collector Rn- (MOD) O S IL IC O N LA T U S P O LY , GT5J311 GT10J312 GT15J311 60 50 1200 General-purpose inverters Low-VCE(sat) IGBT SOP , Resonance Waveform 100 V to 120 V VCES = 900 V to 1000 V IC = 15 A to 60 A IC IC VCES = 1200 V to 1500 V IC = 40 A VCE 200 V to 240 V VCE Waveform Current Resonance VCES = , Configuration (*1) 2.1 PC 60 15 0.12 @ IC @VGE (A) (V) (s) TO-220AB 130 TO-3P(LH


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PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: + p + p Collector Collector Rn- (MOD) O S IL IC O N LA T S U P O LY IN , Voltage Resonance Waveform VCES = 900 V to 1050 V 100 V to 120 V IC = 15 A to 60 A IC IC VCE 200 V to 240 V VCES = 1200 V VCE IC = 40 A Current Resonance Waveform VCES = , . 1050 60 120 190 GT40Q321 1200 40 80 170 TO-3P(LH) TO-3P(N) Fast , reverse diode, since the collector contact is made on the p + layer. Planar Structure Equivalent


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PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
Text: Resonance Waveform VCES = 900 V to 1000 V 100 V to120 V IC = 15 A to 60 A IC IC VCES = 1200 , D IN G M IT T IN E S R U M LA E T T O A P L R O LY S IL IC O N E P , switching series 60 25 1200 40 10 Highly rugged products fc: up to 20 kHz 20 50 , GT50J301 GT25Q301 VCES (V) 600 600 600 1200 600 1200 600 1200 IC (A) DC PC (W , Switching) IGBT AC Input Voltage VCES / IC GT15M321 900 V / 15 A GT60M303 900 V / 60 A


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PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: + p n+ p p + n­ n+ n+ p p + Rn- (MOD) S IL IC O N T , 900VIGBT IGBT p 900VIGBT 2.8 GT60M323 VCE(sat)(V) @ IC = 50 A , 140 V, IC = 50 A, VGG = 20 V, RG = 10 , C = 0.33 F, L = 30 H IGBT 1 3 VCE(sat) 1200 V , PFC 1200 1500 600 400 120 57 60 42 40 30 120 120 80 80 100 130 , -220SIS 60 10 1200 TO-220NIS 40 50 20 30 600 SOP-8 10 20 30 25


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PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
LC1 D38

Abstract: lc1 f265 LC1 F400 LC1-k16 LP1 K12 contactor LC1-D25 Lc1 f630 LP1 K09 LC1-D09 LC1-D18
Text: 1020 A or asynchronous motor with P = 90 kW - Ue = 415 V - Ie = 165 A. Ic = 6 x Ie = 990 A. b 60 000 , (1) On-load factor 4 y 25 % 5 ­ ­ ­ ­ LC1 D09 1200 0.5 P y 85 % , Operational power in kW-50 Hz. Example: Asynchronous motor with P = 5.5 kW - Ue = 400 V - Ie = 11 A - Ic = Ie = 11 A or asynchronous motor with P = 5.5 kW - Ue = 415 V - Ie = 11 A - Ic = Ie = 11 A 3 million , kW - Ue = 380 V - Ie = 245 A - Ic = Ie = 245 A or asynchronous motor with P = 132 kW - Ue = 415 V -


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2006 - FGA15N120

Abstract: FGA15N120ANTD
Text: (Continued) Figure 14. SOA Characteristics 10 0 Gate-Emitter Voltage, VGE [V] 12 Ic M A X ( P u lse d) 50s Ic M A X (C o n tinu o us ) 1 00 s 1m s Collector Current, Ic [A] 10 D C O p e ra tio n 1 6 Vcc = 200V 3 0.1 0 0 20 40 60 80 100 120 0 .0 1 0.1 S in g le N on re p , FGA15N120ANTD / FGA15N120ANTD_F109 1200 V, 15 A NPT Trench IGBT April 2013 FGA15N120ANTD / FGA15N120ANTD_F109 1200 V, 15 A NPT Trench IGBT Features · NPT Trench Technology, Positive temperature coefficient


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PDF FGA15N120ANTD FGA15N120
2012 - FS300R12OE4P

Abstract: F3L400R12PT4 FP06R12W1T4 FS450R12OE4P bt 1690 scr Dz800S17ke3 fp150r07n3e4 Eupec thyristors catalog FF150R12RT4 F3L300R12PT4
Text: P . . V V EasyPIMTM/EasyPACK V P . . IC [A] IC 10 A Power Integrated Module 600 V , New Designs 650 V & 1200 V IC 35 A FP50R07N2E4 FP50R07N2E4_B11 FP75R07N2E4 FP75R07N2E4_B11 , 1200 VCES Type VCE V IGBT Inverter Rectifier Diodes IC * IC VCEsat RthJH RthJC Eon+ VRRM Id RthJC A A V , Chopper VCE IC * RthJC V A K/W TC= max. 80°C 1200 1200 1200 1200 1200 1200 1200 1200 10 15 25 35 10 15 25 , L_B1e/1.18 L_B1e/1.18 L_B1e/1.18 L_B1j/1.19 L_B1j/1.19 L_B1j/1.19 1200 VCES Type VCE V IC * A TC= 80


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6503A

Abstract: MHPM7B8A120A td-100
Text: Vq e s ·c 'c(pk) if 1200 ±20 8.0 16 9.0 16 60 30 - 4 0 to +125 -40tO +125 V V A A A A W W ·c , (PW 1.0 ms) (2) TOTAL MODULE VcE8 Vq e s >c 'C(pk) PD VRRM If 'F(pk) 1200 ±20 e.o 16 60 1200 , Resistance (Eaoh Die) OUTPUT INVERTER |R VF - 10 1.06 - 60 1,6 2.9 HA V °C/W Rex 'GES ic , (Vq e 1200 V, Vq e 0 V) Tj - 26°C T j - 126°C Gate-Emltter Threshold Voltage (Vq e V q e , Ic = 1 , mJ V ns nC °C/W °C/W : VQE(th) V(BR)CES VCE(SAT) Cles Qt tfi E(on) 4.0 1200 - : 6.0 1300 2.6


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PDF MHPM7BBA120A/D MHPM7B8A120A MHPM7B8A120A 6503A td-100
2007 - mp2a5100

Abstract: ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 Diode SMD SJ 24 F5049 Diode SMD SJ 28 Diode SMD SJ 09
Text: IC VCE(sat) Cont. Max. Volts Amps. Volts 1200 25 2.2 1200 50 2.2 1200 75 2.2 1200 25 2.2 1200 50 2.2 1200 75 2.2 ブレーキ部 Brake VCES IC Cont. Volts Amps. 1200 25 , ©Ÿèƒ½ä»˜â€ƒ 600, 1200 volts class/All-silicon IPM with P and N-side alarm function 型 式 Device type , IC Cont. Volts Amps. 600 30 600 50 600 50 600 50 1200 15 1200 15 1200 25 制御é , Power MOSFET . 9 FAP-III series ( P


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PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 Diode SMD SJ 24 F5049 Diode SMD SJ 28 Diode SMD SJ 09
2012 - Not Available

Abstract: No abstract text available
Text: μs 8/20μs / @1Vrms, 1kHz Watt P 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.10 , 100 100 90 80 80 70 70 65 65 65 60 60 <20μA Test Condition Units Symbol , 30 35 40 50 60 75 95 115 130 140 150 175 195 210 230 250 275 300 320 350 385 420 , 430 470 510 560 620 680 750 Volts Max. VC 21.6 44 26.0 51 31.1 60 36.5 73 46 86 , 1050 748 1150 825 1290 Amps IC 1 1 1 1 1 1 1 1 5 5 5 5 5 5 5 5 5 5 5 5 5 5


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K107 transistor

Abstract: mosfet 50g 10750g
Text: H A R A C T E R IS T IC S S Y MB OL P A R AM ET ER T he r ma l r e si s t a n c e CONDI TI ONS MIN , /W K/W K/W STATIC C H A R A C T E R IS T IC S Tb = 25 "C unless otherwise specified S Y MB OL P , / 60 °C 80 100 120 140 Fig.2. Normalised limiting pow er dissipation. PD% = 100 P q/ P d(25 , industrial or intellectual property rights. LIFE S U P P O R T AP PL IC A TI ON S These products are not , Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor Logic level


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PDF BUK107-50GL K107 transistor mosfet 50g 10750g
IMHPM7B16A120B

Abstract: MHPM7B16A120B
Text: IGBT Reverse Voltage VCES 1200 v Gate-Emitter Voltage VGES *20 v Ic 16 A , `,?& ,> p $~ IGBT Power Dissipation PD 75 Diode Reverse Voltage VRRM 1200 , Threshold Voltage (VCE = VGE, Ic = 10 mA) VGE(th) 4.0 1200 Collector-Emitter Breakdown Voltage , ,~, `J:%.,? ~., t. \ t Average Output Rectified Current {+1:1~~%1,~$ VRRM 1200 v 10 16 A lFSM 330 A IGBT Reverse Voltag@$:$ *.$$ ` VCEs 1200 v Gate-Emitter


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PDF MHPM7B16A120B/D IMHPM7B16A120B MHPM7B16A120B OH5214315 140WI IPHX3601M 2W609 MHPM7B16A120BID IMHPM7B16A120B MHPM7B16A120B
2006 - Hitachi DSA002700

Abstract: No abstract text available
Text: dt © © t5 IC VCE dt 0.0 0 200 400 600 800 1000 1200 1400 0 200 400 600 800 1000 1200 1400 Collector Current IC (A) Collector Current IC (A) Turn-on Loss vs , 0.0 0 200 400 600 800 1000 1200 0.0 0 200 400 600 800 1000 1200 1400 Collector Current IC (A , %)= Eon(full)= ( IC VCE dt ' ' t1 IC VCE dt 0 8.0 0.0 2.0 4.0 6.0 8.0 Gate Resistance , VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage


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PDF IGBT-SP-06010 MBN1200E33C 000cycles) Hitachi DSA002700
S6I06GB

Abstract: S6I06GX-TCE FZ 83 1500 capacitor S6R06GA-T S6R06GX-TCE S6R06GB S6R06GE-TCE FZ 77 1500 S6R06GB-T S6I06GB-T
Text: 60 10 S6I06GX-T S6I06GX-TCE 4 6 115 60 50 1 0 220 1 0 240 Please use a p p ro p riate , (N-m ) 0.060 (uF) 3.0 4 4 6 g 1 0 220 60 50 60 30Min. 0.1 1 1550 1200 1500 , . 0.10 0.18 1200 1500 1200 1500 1500 1200 0.53 0.053 0.8 4 5.4 6 10 10 100 60 115 , ) 6 6 6 10 (V) 110 1 0 220 10 100 (Hz) 60 60 50 60 Load Duty Cont. Cont. Cont. Current (A) 0.20 0.10 0.19 Speed irom) 1550 1550 1200 1500 Cont. 0.10 1200 1500 Cont. 0.18 0.20 0.19 Cont. 0.09 0.10


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PDF S6I06GA-T S6I06GB-T S6I06GC-T S6I06GD-T S6I06GE-T S6I06GX-T S6I06GX-TCE S6I06GB FZ 83 1500 capacitor S6R06GA-T S6R06GX-TCE S6R06GB S6R06GE-TCE FZ 77 1500 S6R06GB-T
2006 - MBN1200E33C

Abstract: No abstract text available
Text: 1600 1400 13V 1800 1400 1200 Collector Current IC (A) 1800 Collector Current IC , VCE dt 0 800 1000 1200 1400 0 200 400 Collector Current IC (A) Turn-on , 1.2 © 2.0 © Eon (J/pulse) Eoff(10%) 1.4 1000 1200 Collector Current IC (A , 1000 1200 1400 IC (A) Switching Time vs. Collector Current Spec.No.IGBT-SP-06010 R1 (P4 , =1650V IC =1200A L=100nH VG=±15V t9 2 Err(Full) Err(10%) 1.5 1 0.5 0 6.0 " RG


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PDF IGBT-SP-06010 MBN1200E33C 000cycles) MBN1200E33C
2010 - GB15XP120KTPBF

Abstract: diodes jc 817 gb15xp120kt
Text: voltage IC TC = 25 °C TC = 100 °C MAX. UNITS 1200 VCES Continuous collector current , . MAX. 1200 - - V VGE = 0 V, IC = 1 mA - 1.11 - V/°C VGE = 0 V, IC = 250 A , mJ 341 TJ = 150 °C, IC = 60 A Rg = 10 , VGE = 15 V to 0 Short circuit safe operating area , GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A FEATURES · Generation 5 NPT 1200 V IGBT technology · HEXFRED® diode


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PDF GB15XP120KTPbF E78996 2002/95/EC 18-Jul-08 GB15XP120KTPBF diodes jc 817 gb15xp120kt
MBN1200E33C

Abstract: Hitachi DSA0045
Text: 1600 1400 13V 1800 1400 1200 Collector Current IC (A) 1800 Collector Current IC , © Eon(10%)= 0.0 t8 t7 t6 t5 t8 t6 IC VCE dt IC VCE dt 0 800 1000 1200 , ) 5.0 2.0 0 1200 TYPICAL 6.0 5.5 Tc=125 Vcc=1650V Rg=3.3 L=100nH VG=±15V 2.5 , /pulse) Eoff(10%) 1.4 1000 1200 Collector Current IC (A) Turn-on Loss vs. Collector Current 1400 0.0 0 200 400 600 800 Collector Current 1000 1200 1400 IC


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PDF IGBT-SP-06010 MBN1200E33C 000cycles) MBN1200E33C Hitachi DSA0045
2006 - Not Available

Abstract: No abstract text available
Text: £ £ £ 1600 11V 1600 1400 13V 1800 1400 1200 Collector Current IC (A , © Eon(10%)= 0.0 t8 t7 t6 t5 t8 t6 IC VCE dt IC VCE dt 0 800 1000 1200 , Collector Current 1000 1200 1400 IC (A) Switching Time vs. Collector Current , Emitter Voltage Gate Emitter Voltage Symbol Unit VCES VGES DC IC Collector Current 1ms ICp , 2.0 2.9 1.7 3.5 2.2 2.3 Max. 12 60 500 4.7 5.3 6.5 3.2 3.8 3.2 5.6 2.8 2.75 1.4


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PDF IGBT-SP-06010 MBN1200E33C 000cycles)
2015 - v23990-p640-g20

Abstract: No abstract text available
Text: IC I CRM Turn off safe operating area Power dissipation per IGBT P tot Gate-emitter peak , heatsink temperature I C = f(T h) 75 IC (A) Ptot (W) 250 Brake IGBT 200 60 150 45 , MAX Ic CHIP 100 VCE MAX Ic MODULE 80 60 40 20 0 0 200 400 600 , fitted % % VCE IC 100 Ic 250 IC 90% 200 75 150 IC 60 % 50 IC 40% 100 , V23990-P640-G20-PM flow CON 0 2nd gen 1200 V / 35 A Features flow 0 ● 3 phase


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PDF V23990-P640-G20-PM v23990-p640-g20
1999 - BUK856-400IZ

Abstract: TP500
Text: = 25 °C; IC = 10 A; RG = 1 k; see Figs. 23,24 Tmb = 125 °C; IC = 8 A; RG = 1 k; f = 50 Hz; t = 60 , 80 0.2 60 50 0.05 0.02 40 t D= p T p 30 t t P D 1E-02 20 10 , Threshold Voltage VGE(TO) = f(Tj); conditions: IC = 1 mA; VCE = VGE 4 Rev. 1.200 Philips , Switching Characteristics vs. IC conditions: Tj=125 °C VCL=300 V; RG=1 k; LC=5 mH. 5 Rev. 1.200 , Vcc Lc Lc t p : adjust for correct Ic t p : adjust for correct Ic V CL D.U.T. D.U.T


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PDF OT404 BUK866-400 BUK856-400IZ TP500
2010 - gb15xp120kt

Abstract: GB15XP120KTPBF 93913
Text: voltage IC MAX. UNITS 1200 VCES Continuous collector current TEST CONDITIONS V , = 15 V, IC = 30 A, TJ = 125 °C Temperature coefficient of V(BR)CES SYMBOL 1200 VGE = 15 , transconductance gfe VCE = 25 V, IC = 15 A - 12 - VGE = 0 V, VCE = 1200 V - - 250 VGE , °C, IC = 60 A Rg = 10 , VGE = 15 V to 0 Short circuit safe operating area 18 - tf - , GB15XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V


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PDF GB15XP120KTPbF E78996 2002/95/EC 18-Jul-08 gb15xp120kt GB15XP120KTPBF 93913
1996 - Eecr1

Abstract: BUK856-400 BUK856-400IZ igbt philips 3050v
Text: .6. Typical On-state Voltage VCEsat = f( IC ); parameter Tj; conditions: VGE = 5 V 3 Rev. 1.200 , Transconductance gfe = f( IC ); parameter Tj; conditions: VCE = 10 V December 1996 0 20 40 60 Tj / C , : IEC = 50 mA Vcc Vcc Lc Lc t p : adjust for correct Ic t p : adjust for correct Ic V , VCE VGE t tc P Vce x Ic Ecer 10% t t Fig.21. Definitions of inductive load , VCEsat IC Ptot ECERS DESCRIPTION 1 350 400 500 2.2 20 100 300 V V A W mJ


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PDF BUK856-400 O220AB Eecr1 BUK856-400IZ igbt philips 3050v
1996 - igbt ignition

Abstract: igbt to220 D 400 transistor data POWER BIPOLAR JUNCTION TRANSISTOR IGBT 3 pin BUK856-400 BUK856-400IZ ignition coil IGBT transistor application
Text: ); conditions: IC = 1 mA; VCE = VGE 4 Rev. 1.200 Philips Semiconductors Product specification , (BR)ECS = f(Tj); conditions: IEC = 50 mA Vcc Vcc Lc Lc t p : adjust for correct Ic t p , 10% t 90% Vge VCE VGE t tc P Vce x Ic Ecer 10% t t Fig , VCEsat IC Ptot ECERS DESCRIPTION 1 350 400 500 2.2 20 100 300 V V A W mJ , Collecter-emitter voltage tp 500 µs VCE ±VGE IC IC ICM Collector-emitter voltage Gate-emitter voltage


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PDF BUK856-400IZ BUK856-400 igbt ignition igbt to220 D 400 transistor data POWER BIPOLAR JUNCTION TRANSISTOR IGBT 3 pin ignition coil IGBT transistor application
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