The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
HSMS-285L-BLKG Broadcom Limited Mixer Diode, Zero Barrier, L Band, Silicon, ROHS COMPLIANT, MINIATURE, SC-70, 6 PIN
HSMS-281K-TR2G Broadcom Limited Mixer Diode, Silicon, ROHS COMPLIANT, MINIATURE, SC-70, 6 PIN
HSMS-2863-TR2G Broadcom Limited Mixer Diode, C Band, Silicon, ROHS COMPLIANT PACKAGE-3
HSMS-8101-TR2G Broadcom Limited Mixer Diode, KU Band, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
HSMS-282E-TR1G Broadcom Limited Mixer Diode, C Band, Silicon, LEAD FREE, MINIATURE, SC-70, 3 PIN
HSMS-286L-BLKG Broadcom Limited Mixer Diode, C Band, Silicon, ROHS COMPLIANT, MINIATURE, SC-70, 6 PIN

hsms-10-5 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - HSMS-8201

Abstract:
Text: 10-3 10-4 HSMS-8201 10-5 -45 -35 -25 -15 -5 5 INCIDENT POWER (dBm) 15 25 , . 10-4 HSMS-8201 10-5 -45 It can be seen that the transfer curve for a doubler can be predicted , VOLTAGE (V) 101 10-1 10-2 10-3 MEASURED CALCULATED 10-5 -40 network and transfer , 101 Cj = 0.25 pF Rs = 25 FREQUENCY = 915 MHz 102 103 104 JUNCTION RESISTANCE () 105 , battery which uses the same HSMS-2852 diode pair. 10-1 10-3 10-5 -50 -40 -30 -20 -10 0


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PDF 5966-0785E HSMS-8201 Rf detector HSMS 8202 polozec HSMS2852 HSMS-8202 HSMS-2852 HSMS-2850 HSMS8202 ordinary calculator diode rj 93
1997 - HSMS-8201

Abstract:
Text: -2850 10-3 DOUBLER CIRCUIT Figure 5. The Voltage Doubler 10-4 HSMS-8201 10-5 -45 -35 -25 -15 -5 5 , , by means of which it can be analyzed using equation (2). 10-1 10-2 10-4 HSMS-8201 10-5 -45 -35 -25 -15 -5 5 INCIDENT POWER (dBm) 15 25 10-3 HSMS-2850 HSMS-2852 MEASURED CALCULATED 10-5 -40 , 0.40 0.30 0.20 101 Cj = 0.25 pF Rs = 25 FREQUENCY = 915 MHz 102 103 104 JUNCTION RESISTANCE () 105 , 10-3 HSMS-2852 VIRTUAL BATTERY -40 -30 -20 -10 0 INCIDENT POWER (dBm) 10 20 10-4 10-5 -50


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PDF 5966-0785E HSMS-8201 BK-5 polozec A6 sot-23 BM 8202 Optotek rf power detector voltage doubler
1999 - HSMS-8201

Abstract:
Text: CIRCUIT 10-2 HSMS-2850 Figure 5. The Voltage Doubler 10-3 10-4 HSMS-8201 10-5 -45 -35 , the doubler an interesting circuit for virtual battery applications. 10-4 HSMS-8201 10-5 -45 , 10-3 MEASURED CALCULATED 10-5 -40 network and transfer curves were measured, as shown in , 101 Cj = 0.25 pF Rs = 25 FREQUENCY = 915 MHz 102 103 104 JUNCTION RESISTANCE () 105 , battery which uses the same HSMS-2852 diode pair. 10-1 10-3 10-5 -50 -40 -30 -20 -10 0


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PDF 5966-0785E HSMS-8201 Rf detector HSMS 8202 HSMS-2852 2A9 Sot HSMS2852 5446 diode HSMS-2850 HSMS-8202 HSMS8202 Optotek
HSMS-2850-BLK

Abstract:
Text: )* (Vd)* (mA)* MSA-1105-STR 12.5 10.5 4.2 +17.5 8 5.5 60 05 Plastic *Refer to schematic drawing. Low


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PDF HSMS-2829-BLK HSMS-2800-BLK HSMS-2802-BLK HSMS-2802-TR1 INA-03184-BLK IAM-82008-STR IAM-81008-STR HSMS-2850-BLK HSMS-2824-BLK MSA-1105 IAM-82008 HSMS-2812BLK HSMS-2822-TR1 HSMS-2805-BLK HSMS-2822-BLK
1994 - hsch 3486 zero bias schottky diode

Abstract:
Text: HSMS-8101 HSMS-2850 HSCH-3486 10 1 10-8 10-7 10-6 Is - SATURATION CURRENT, A 10-5 10-4 , RL = 105 HSMS-2850 10 GHz 3 = 2 (1 - 2) 1 -8 10 10-7 HSCH-3486 10 10-6 Is - SATURATION CURRENT, A 10-5 10-4 Figure 3. Effect of Load Resistance and Capacitance on Sensitivity , 10-7 HSCH-3486 10-6 Is - SATURATION CURRENT, A 10-5 10-4 Figure 5. Effect of Mismatch


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PDF HSMS-8101 HSMS-2850 HSCH-3486 5963-0951E hsch 3486 zero bias schottky diode
2006 - hsch 3486 zero bias schottky diode

Abstract:
Text: worse when the impedance matching the diode. 10-8 the two -7 10 diodes result in-6 HSMS-10-5 10 the , 0.5210-8 volts per watt 9 I× IS S 10-8 10-7 1 10-6 10-5 10-4 e=.026 -1 = I = IS 2 = V V­IR I I , VOLTAGE SENSITIVITY, mV/µW ( ( ( ( ( ( ( ( 10-5 10-4 S11 - REFLECTION COEFFICIEN 10-8 0.8 10-7 10-6 10-5 Is - SATURATION CURRENT - A 10-4 0.7 2 - VOLTAGE SENSITIVITY, mV/µW 1000 Cj = 0.1 pF Rs = 50 RL = 105 1 GHz 100 3 1 -8 10 10 GHz HSCH-3486 10


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PDF HSCH-3486 HSMS-8101 5952-9823E 5963-0951E hsch 3486 zero bias schottky diode HSMS-2850 HSCH-3486 hsms-10-5
2000 - 282P

Abstract:
Text: formula 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation , SPICE parameters, is available from Agilent. 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = R V ­ R s IS +


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PDF HSMS-282x OT-363 HSMS-282K OT-23/SOT-143 5968-2356E, 5968-5934E 5968-8014E 282P variable power divider 2-82K HSMS-282x Series hsms2822 schottky diode limiter application note marking code c2 diode NN SOT-143 sot-23 DIODE marking code D3
1999 - hsch 3486 zero bias schottky diode

Abstract:
Text: Detector Neglecting parasitic and reflection losses: I =/ V 10-5 10-4 3 While the , Cj which are typical only of the HSCH-3486. 1000 Cj = 0.1 pF Rs = 50 RL = 105 1 GHz 100 , at the lower frequencies. 10-4 10-5 where r is the reflection coefficient of the diode , 1 0 -8 10 10-7 HSCH-3486 HSMS-2850 2 10-6 Is - SATURATION CURRENT, A 10-5


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PDF HSMS-8101 HSMS-2850 HSCH-3486 5952-9823E. 5963-0951E hsch 3486 zero bias schottky diode "zero-bias schottky diode" HSCH-3486 S11 SCHOTTKY diode 5963-0951E NKT 90 Microwave detector diodes 18 GHz Zero Bias Small Detector Diodes Microwave detector diodes HSMS-2850
1998 - HSMS-2850

Abstract:
Text: resistance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is M where Ib = externally applied


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PDF HSMS-2850 HSMS-2860 OT-23/ OT-143 OT-23 5966-0928E, SOT-23 marking l31 HSMS2850 sot143 code marking l30
1997 - HSMS-2860 equivalent

Abstract:
Text: 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current , PASSIVATION LAYER SCHOTTKY JUNCTION 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = R V ­ R s IS + I b , 10-5 8.33 X nT RV = ­­­­­­­­­­­­ IS + I b where T is the diode's temperature in °K. As can be


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PDF OT-323 SC-70) HSMS-285A HSMS-286A HSMS-285A HSMS-2860 equivalent Hewlett-Packard microwave pin diode zero bias schottky diode detector HSMS285B hsms-285b HSMS-2850 Hewlett-Packard transistor microwave 286E
1998 - HSMS-2860 equivalent

Abstract:
Text: 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current , of the total current flowing through it. Rj = = 8.33 x 10-5 n T IS + I b 0.026 IS + I b where n =


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PDF OT-363 SC-70, HSMS-285L/P HSMS-286K/L/P/R OT-363 HSMS-286a HSMS-285a HSMS-286K HSMS-286K/L/P/R HSMS-2860 equivalent DIODE RF DETECTOR HSMS-286 k 2865 marking code e5 sot363 MARKING CODE E6 sot363
1999 - HSMS-2850

Abstract:
Text: resistance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + I s where Ib = externally


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PDF HSMS-2850 HSMS-2860 OT-23/ OT-143 HSMS-2860 HSMS-2850 OT-143 5968-4188E 5968-5437E diode Marking code t5 HSMS-286* reliability HSMS-2820 HSMS-2860 equivalent HSMS2850 HSMS-286X diode marking code RJ HSMS-285X
2003 - LNA ku-band

Abstract:
Text: - 2.5 0.8- 6 10GHz ft 10GHz ft 21.5 21.5 15.1 17 19 10.5 10.4 1.8 9.8 1.9 13.4 1 to 8 , 24 23 25 22 14 16 16 10.5 9.5 9.5 10 12 19.5 18 18 14 22.5 21 12 18 30 30 , -41532 AT-32032 5/5 2.7/5 10 GHz ft 10 GHz ft 10.5 10.4 7 7.5 - 1.5 1.25 Si BJT , 0.5-6 0.5-6 0.5-6 12 9.5 10.5 11 11 10 8 21 17 14.5 19.5 18 27 24.5 34 31 27 , 0.5 - 6 18.5 11 14.5 14 10.5 1 to 9 -2.2 14.6 13.7 24.5 12 to 17 8 24.3 23.5 42


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PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb microwave transmitter 10GHz 900-1700MHz MGA-725M4 HSMS-2850 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSCH-9401 AT-64020
1998 - 915 MHz RFID

Abstract:
Text: 0.18 pF RS = series resistance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is , SCHOTTKY JUNCTION 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = R V ­ R s IS + I b EQUIVALENT CIRCUIT , general comments can be made. As was given earlier, the diode's video resistance is given by 10-5


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PDF OT-323 SC-70) HSMS-285A HSMS-286A HSMS-285A 5965-8838E 5966-4282E 915 MHz RFID METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 Hewlett-Packard microwave pin diode sot-23 diode common anode t4
2006 - JESD22-A102-B

Abstract:
Text: 90% Confidence Level [2] FIT [3] 556.0 227.0 91.0 34.0 4.0 0.20 0.007 MTTF (hours) 7.8 x 105 1.9 x , 103 104 107 105 106 MEAN TIME TO FAILURE, MTTF (HRS) 108 0.5 109 Example of Failure


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PDF HBAT-54xx, HSMS-270x, HSMS-280x, HSMS-281x HSMS-282x MIL-STD-750. DOD-HDBK-1686A HBAT-54xx HSMS-270x HSMS-280x JESD22-A102-B JESD22-A113-B HRS108 hsms282x
2005 - HSMS-286x Series

Abstract:
Text: ) Rj = 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = , current flowing through it. 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = R V ­ R s IS + I b 0.026 = ­­­­­ at , can be made. As was given earlier, the diode's video resistance is given by RV = 8.33 x 10-5 nT


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 HSMS-286x. HSMS-286x-TR2G 5989-0480EN 5989-2495EN HSMS-286x Series silicon diode ideality factor HSMS-285X HSMS-2860 K 2865 rf power detector voltage doubler A004R HSMS2860 HSMS286B HSMS-286K
marking I2 SOT23-5

Abstract:
Text: pF Rs = series resistance (see Table of SPICE parameters) 8.33 X 10'5 nT j= ~ & T , where


OCR Scan
PDF HSMS-2850 HSMS-2860 OT-23/ OT-143 HSMS-2860 OT-23 5966-0928E 5966-2939E marking I2 SOT23-5
2006 - Microwave detector diodes 18 GHz

Abstract:
Text: 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current , current flowing through it. 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = R V ­ R s IS + I b 0.026 = ­­­­­ at , by RV = 8.33 x 10-5 nT IS + I b A similar experiment was conducted with the HSMS-286B series


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PDF HSMS-286x OT-23/SOT-143 OT-323 OT-363 OT-363 HSMS-286x-TR2* HSMS-286x-TR1* HSMS-286x-BLK HSMS-286x. Microwave detector diodes 18 GHz METAL DETECTOR circuit for make Microwave detector diodes SCHOTTKY DIODE SOT-143 FR4 epoxy pcb double sided diode Marking code A2 HSMS-286x Series silicon diode ideality factor rf detector diode metal detectors circuits
1997 - equivalent components of diode ak 03

Abstract:
Text: Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias , of the total current flowing through it. 8.33 x 10-5 n T R j = –––––––––––â , his specific design. 8.33 x 10-5 nT RV = –––––––––––– IS + I b 120


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PDF OT-363 SC-70, HSMS-285L/P HSMS-286L/P/R 5966-2032E equivalent components of diode ak 03
2004 - HSMS-286x Series

Abstract:
Text: ) Rj = 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = , current flowing through it. 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = R V ­ R s IS + I b 0.026 = ­­­­­ at , can be made. As was given earlier, the diode's video resistance is given by RV = 8.33 x 10-5 nT


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 OT-363 SC70-6 5988-0970EN 5989-0480EN HSMS-286x Series AN1124 METAL DETECTOR circuit for make IC RFID 2.45 GHz SCHOTTKY DIODE SOT-143 mark code t4 diode Microwave detector diodes diode SMA marking code PB marking code 17 surface mount diode
2003 - variable power divider

Abstract:
Text: formula 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation , SPICE parameters, is available from Agilent. 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = R V ­ R s IS +


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PDF HSMS-282x OT-363 HSMS-282K 5968-8014E 5989-0279EN variable power divider circuit and working lcr meter 282P diode ring mixer phase detector small signal low leakage fast epitaxial diode NN SOT-143 marking code C4 Sot 23-5 gaas marking 1e 65 marking sot23
1999 - 2.45 GHz single chip transmitter

Abstract:
Text: RS = series resistance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is where Ib = , shown in Figure 9, along with its equivalent circuit. METAL RS 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = , over temperature. 10-5 A similar experiment was conducted with the HSMS-286B in the 5.8 GHz detector


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PDF OT-323 SC-70) HSMS-285A HSMS-286A OT-323 HSMS-282 5966-4282E 5968-5908E 2.45 GHz single chip transmitter Diode Schottky Switch frequency 10 GHz HSMS-285B
2005 - Microwave detector diodes

Abstract:
Text: through it. 8.33 X 10-5 n T R j = ­­­­­­­­­­­­ = R V ­ R s IS + I b 0.026 = ­­­­­ at 25°C IS + I b , can be made. As was given earlier, the diode's video resistance is given by RV = 8.33 x 10-5 nT


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 Configurat65) 5989-2495EN 5989-4023EN HSMS-286x-TR2* Microwave detector diodes HSMS-286x Series METAL DETECTOR circuit for make IC RFID 2.45 GHz AN1124 high range METAL detector circuit k 2865 SCHOTTKY DIODE SOT-143 HSMS-286K
1998 - SOT-23 marking l31

Abstract:
Text: SPICE parameters) Rj = 8.33 X 10-5 nT Ib + I s where Ib = externally applied bias current in


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PDF HSMS-285x HSMS-286x OT-23 OT-143 5966-0928E, 5966-2939E 5966-4283E SOT-23 marking l31 HSMS-2850 HSMS-285A HSMS-285X HSMS-2860 HSMS-286X HSMS2850 L30 SOT143 MARKING- L31
1999 - HSMS-286* reliability

Abstract:
Text: plot with activation energy of 1.05 eV, and listed in the following table. Point[1] 90 , 3.0 300 JUNCTION TEMPERATURE, Tj (°C) 1.5 200 1.0 150 Ea = 1.05 eV 0.9 0.8 100 , failure rate per year is: (9.0 x 10-11/1000 hrs.) x (25%) x (8760 hrs/yr) = 1.97 x 10-5 % per year 3


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PDF HSMS-8101 HSMS-820X HSMS-286A/6X MIL-STD-750. DOD-HDBK-1686A HSMS-8101/820X/286X/286A 5965-9142E 5967-6074E HSMS-286* reliability HSMS-8101 HSMS-820X MTTF
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