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1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: Purpose GaAs FET General Purpose GaAs FET General Purpose HJ-FET General Purpose HJ-FET General Purpose HJ-FET General Purpose HJ-FET General Purpose HJ-FET General Purpose HJ-FET Mobile Comm. HJ-FET Mobile Comm. HJ-FET BS Converter OSC Stage GaAs FET BS Converter OSC Stage GaAs FET BS Converter OSC Stage , Converter GaAs FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET BS Converter HJ-FET Performances NF=1.4dB, Ga=10dB@f=12GHz NF


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
1999 - 1658 NEC

Abstract: SW SPDT FRS transceiver upc8112tb SW-SPDT 2SC5288 NE5510279A RF basics NE52418 discrete LNA D
Text: /GMRS Bluetooth Si MMIC TM GaAs MMIC GaAs HJ-FET Si TRANSISTOR 30M 6 100M 300M , Bipolar Tr. (fT = 15.5 GHz) 2SC5369 Si Bipolar Tr. (fT = 14 GHz) HJ-FET NE34018, NE38018 , Tr. Type Name 2SC5508 Feature Si Bipolar Tr. (fT = 25 GHz) 2SC5761 SiGe Tr. HJ-FET , Discrete Tr. 2SC5508 Si Bipolar Tr. (fT = 25 GHz) HJ-FET NE34018 NE38018 Low Noise GaAs FET , 1cell: 3.6 V(TYP.) Under examination fRX = 832 to 834 MHz GaAs HJ-FET NE34018, NE38018 fRX = 843 to


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PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver upc8112tb SW-SPDT 2SC5288 NE5510279A RF basics NE52418 discrete LNA D
2010 - ic isl 887

Abstract: 2SC5508 NE3514 PG2179 SW SPDT NE3515S02 NESG2031M05 NE5510279A NE3517S03 NE3509M04
Text: Bluetooth Si MMIC TM GaAs MMIC GaAs HJ-FET Si TRANSISTOR 30M 100M 300M 1G 3G , (NE69039) 2SC5754 (NE664M04) PG2179TB HJ-FET 2SC5369 (NE696M01) NE3509M04 PC2756TB PC2757TB , fRF SW OSC LNA HJ-FET X, Ku , 20 GHz GaAs HJ-FET IF , D/U Ratio = 40 dB 22 DBS HJ-FET NE3512S02 HJ-FET NE3503M04 NE3512S02 IF , µPC3232TB µPC3236TK µPC3239TB µPC3241TB SW HJ-FET (20 GHz) NE3517S03 IDU HJ-FET (20


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PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 PG2179 SW SPDT NE3515S02 NESG2031M05 NE5510279A NE3517S03 NE3509M04
NE5510279A

Abstract: uPB1512TU NE350184C dvbt diagram 5.8 ghz Transceiver IC NE552 NE3503M04 gp bjt InMarSat demodulator ne3210s01
Text: GaAs HJFET for up to 24 GHz, to state-of-the-art 13 GHz SiGe prescalers. LNA NE3504S02 NF 0.30 dB; Ga 14.0 dB @ 12 GHz; GaAs HJ-FET NE3210S01 NF 0.35 dB; Ga 13.5 dB @ 12 GHz; GaAs HJ-FET NE350184C NF 0.70 dB; Ga 13.0 dB @ 20 GHz; GaAs HJ-FET , ceramic PKG MIXER NE4210S01 NF 0.50 dB; Ga 13.0 dB @ 12 GHz; GaAs HJ-FET NE3503M04 NF 0.75 dB; Ga 12.0 dB @ 12 GHz; GaAs HJ-FET , mold , receiver ICs with an integrated A/D converter. We also offer low-noise HJ-FET and SiGe transistors to


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2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: NE71300 NE71383B NE76118 NE23383B GaAs FET GaAs FET GaAs FET HJFET 3 3 3 2 10 10 10 10 12000 12000 , GHz NE24200 NE24283B HJFET HJFET 2 2 10 10 12000 NF = 0.6 dB 83B 400018000 NF = 0.6 dB, Ga = 11 dB@f = 12 GHz NE27200 NE32500 NE32900 HJFET HJFET HJFET 2 , dB@f = 12 GHz NE34018 HJFET 2 5 8003000 NF = 0.6 dB, Ga = 16 dB, Gs = 18 dB@f = 2 GHz 18 NE38018 HJFET 2 5 8003000 NF = 0.55 dB, Ga = 14.5 dB, Gs = 16


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Not Available

Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs HJ-FET N E 6 5 1 0 1 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power (CW) with high linear gain, high efficiency and excellent distortion , . FEATURES • GaAs HJ-FET Structure • High Output Power Po = +31.5 dBm typ. @ V ds =


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PDF NE6510179A NE6510179A
x 1535 ce

Abstract: 0537
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency and excellent distortion and is suitable as a driver , stringent quality and control procedures. FEATURES · G aA s HJ-FET Structure · · HighOutput HighLinear


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PDF NE651R479A NE6510179A NE6510379A. x 1535 ce 0537
1989 - 2as01

Abstract: 2AS01 equivalent t1a 95 T1A 84 t1a 60 NE3512S02
Text: HJ-FET , GaAs FET -X84, 84A, 84C MoldS01, S02 PX10614JJ01V0TN1 P10149JJ7V0IFJ1 June 2006 NS CP(K , PX10614JJ01V0TN 3 1. DBS NEC HJ-FET , GaAs FET 1. 1 84, 84A, 84C Mold NEC -X , mm 4. 110 PX10614JJ01V0TN 19 5. 5. 1 HJ-FET , GaAs FET


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PDF MoldS01, PX10614JJ01V0TN1 P10149JJ7V0IFJ1 M8E02 PX10614JJ01V0TN NE3512S02 2as01 2AS01 equivalent t1a 95 T1A 84 t1a 60
1998 - NE6510379A

Abstract: NE6510379A-T1 nec 1761 hjfet application
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · GaAs HJ-FET Structure · High Output Power : PO = +35 dBm


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PDF NE6510379A NE6510379A NE6510379A-T1 nec 1761 hjfet application
California Eastern Laboratories OR NEC

Abstract: NEZ1414-5H T-78
Text: PRELIMINARY DATA SHEET 5 W Ku-BAND POWER GaAs HJ-FET NEZ1414-5H FEATURES OUTLINE DIMENSIONS (Units in mm) · CLASS A OPERATION PACKAGE OUTLINE X-17 · HIGH OUTPUT POWER: 37.5 dBm TYP · HIGH LINEAR GAIN: 9.0 dB TYP 8.25 ± 0.15 · HIGH EFFICIENCY: 36% TYP · INPUT AND OUTPUT INTERNALLY MATCHED GATE SOURCE 9.7 ± 0.13 2.74 ± 0.1 R 1.37 DESCRIPTION DRAIN The NEZ1414-5H is a power GaAs HJ-FET which provides high gain, high efficiency and high output in Ku-band. The


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PDF NEZ1414-5H NEZ1414-5H 24-Hour California Eastern Laboratories OR NEC T-78
1998 - NE6510179A

Abstract: NE6510379A NE651R479A NE651R479A-T1
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency and excellent distortion and is suitable as a driver amplifier for our , control procedures. FEATURES · GaAs HJ-FET Structure · High Output Power : PO = +27 dBm typ. @VDS


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PDF NE651R479A NE651R479A NE6510179A NE6510379A. NE6510379A NE651R479A-T1
a 1232 nec

Abstract: NE6510179A nec 1565 NEC TANTALUM
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · · GaAs HJ-FET Structure High Output Power High Linear


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PDF NE6510179A NE6510179A a 1232 nec nec 1565 NEC TANTALUM
1997 - gaas fet micro-X Package

Abstract: P1014 NE76184A-T1 t25000 gaas fet micro-X
Text: User's Manual TAPE AND REEL SPECIFICATION FOR MICRO-X PACKAGE AND MOLD PACKAGE ( HJ-FET & GaAs MES FET) Document No. P10149EJ6V0UM00 (6th edition) Date Published October 1997 N © 1989 , mold package for HJ-FET and GaAs MES FET with low cost and high performance so that the customers can , . ADAPTED AREA This specification covers standards on tape packaging micro-X GaAs MES FET, HJ-FET and on tape packaging mold GaAs MES FET, HJ-FET . 2-1. TAPE DIMENSIONS t J X G E H


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PDF P10149EJ6V0UM00 gaas fet micro-X Package P1014 NE76184A-T1 t25000 gaas fet micro-X
Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion , . FEATURES • • GaAs HJ-FET Structure High Output Power : Po = +35 dBm typ. • High Linear


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PDF NE6510379A NE6510379A
1999 - X13769XJ2V0CD00

Abstract: PC1099 2SC4703 R78K0 PC1891A 2SC470-3 NE3210 PD784036 PC2781GR UPC1316
Text: 3SK224 PLL µPC1687 CDROM X13769XJ2V0CD00 AV DBS #1 HJFET GaAs MMIC HJFET HJFET NE3210S01 NE425S01 SW+IF Amp. NE425S01 NE329S01 NE4210M01 NE4210M01 µ PG182GR NE325S01 SW µ


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PDF X13769XJ2V0CD00 PD78064Y, 780308Y PD780205 PD7500× PD78064, X13769XJ2V0CD00 PC1099 2SC4703 R78K0 PC1891A 2SC470-3 NE3210 PD784036 PC2781GR UPC1316
Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency and excellent distortion and is suitable as a , by NEC’s stringent quality and control procedures. FEATURES • GaAs HJ-FET Structure


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PDF NE651R479A NE651R479A NE6510179A NE6510379A. R479A
1998 - NE6510379A

Abstract: NE6510379A-T1 0949 NEC TANTALUM
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · GaAs HJ-FET Structure · High


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PDF NE6510379A NE6510379A NE6510379A-T1 0949 NEC TANTALUM
Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. Reliability and , HJ-FET Structure · · · High Output Power High Linear Gain : Po = +35 dBm typ. @Vos = 3.5 V, : G l = 13 dB


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PDF NE6510379A NE6510379A
2010 - 2SC5508

Abstract: transistor 20107 NE3509 UPC8236 NE3517S03 UPC3243 NE5510279A 2SC4226 APPLICATION NOTES NESG270034 800 Mhz Cordless Phone circuit diagram
Text: HJ-FET Si TRANSISTOR 30M 100M 300M TM 1G 3G 10G 30G (Hz) The mark shows , Down-converter D/C 2SC5369(NE696M01) HJ-FET PC2756TB 6-pin Super Minimold PC2757TB PC2758TB , Band Processor Recommended device list Block LNA Function LNA Type Name HJ-FET Series Feature GaAs HJ-FET Series for X, Ku-band, 20 GHz band GP = 25.0 dB, PO (1 dB) = -4.0 dBm (3.3 V) GP , Digital DBS (Satellite Broadcasting) HJ-FET NE3512S02 HJ-FET NE3503M04 NE3512S02 IF Amplifier


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PDF R09CA0001EJ0300 2SC5508 transistor 20107 NE3509 UPC8236 NE3517S03 UPC3243 NE5510279A 2SC4226 APPLICATION NOTES NESG270034 800 Mhz Cordless Phone circuit diagram
2000 - NE6510179A

Abstract: NE6510179A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES · GaAs HJ-FET structure · High output


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PDF NE6510179A NE6510179A NE6510179A-T1
Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS (unit: jum) The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom transmit power amplifier applications to 30 GHz. NE1280100 NE1280100 is one cell die of 450 ¿¡m gate width, offering 0.1 W output power. NE1280200 is two cells of 460 900 ¿¡m gate width, offering


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PDF NE1280 NE1280100 NE1280100 NE1280200 NE1280400
NE6510179A

Abstract: hjfet
Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER:+31.5 dBm TYP @ Vds = 3.5 V, idsq = 150 mA, f = 850 MHz, Pin = +20 dBm +32.0 dBm TYP @ vds = 3.2 v, idsq = 200 mA, f = 1760 MHz, Pin = +24 dBm • HIGH LINEAR GAIN: 14 dB TYP @ vds = 3.5 v, idsq = 150 mA, f = 850 MHz, Pin = 0 dBm 10 dB TYP @ , : Unless otherwise specified, tolerance is ±0.2 mm. DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET


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PDF NE6510179A NE6510179A hjfet
nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
Text: . 36 3.2.4 Low Noise GaAs FETs, HBTs, HJ-FETs , ) GaAs Device products HJ-FETs (Hetero Junction FET) Discretes FETs MES FETs Power FETs , MMIC 20 NE3509M04 HJ-FET NE3508M04 HJ-FET 15 0.2 0 PC8211TK SiGe MMIC PC8230TU , mA : VCE = 2 V, IC = 10 mA 20 NE3510M04 HJ-FET NESG2021M05 SiGe HBT NESG3031M05 NESG3031M14 SiGe HBT NE3509M04 HJ-FET NESG2031M05 SiGe HBT 15 NE3508M04 HJ-FET 10 0 0.2


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PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
2010 - UPC8236

Abstract: 2SC5508 CATV MODULATOR upg2406t6r NE5510279A NE3515S02 Microwave GaAs FET catalogue 2SC3357/NE85634 2sc3357 NE3514S02
Text: HJ-FET Si TRANSISTOR 30M 100M 300M TM 1G 3G 10G 30G (Hz) The mark shows , NE3509M04 Low Noise GaAs FET Down-converter D/C 2SC5369(NE696M01) HJ-FET PC2756TB 6 , Band Processor Recommended device list Block LNA Function LNA Type Name HJ-FET Series Feature GaAs HJ-FET Series for X, Ku-band, 20 GHz band GP = 25.0 dB, PO (1 dB) = -4.0 dBm (3.3 V) GP , Broadcasting) HJ-FET NE3512S02 HJ-FET NE3503M04 NE3512S02 IF Amplifier µPC3224TB µPC3227TB


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PDF R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 CATV MODULATOR upg2406t6r NE5510279A NE3515S02 Microwave GaAs FET catalogue 2SC3357/NE85634 2sc3357 NE3514S02
NE6510179A

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET FEATURES LOW COST PLASTIC SURFACE MOUNT PACKAGE HIGH OUTPUT POWER: +31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, 1 = 850 MHz, Pin = +20 dBm +32.0 dBm TYP @ V ds = 3.2 V, Idsq = 200 mA, f = 1760 MHz, Pin = +24 dBm HIGH LINEAR GAIN: 14 dB TY P @ V ds = 3.5 V, Idsq = 150 mA, f = 850 MHz, Pin = 0 dBm 10 dB TYP @ Vds = 3.2 V, Idsq = 200 mA, f = , mm. d e s c r ip t io n _ The NE6510179A is a 1 W GaAs HJ-FET designed for


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PDF NE6510179A NE6510179A-T1 NE6510179A
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