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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065030K4S UF3C065030K4S ECAD Model UnitedSiC Power Field-Effect Transistor, 85A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
UJ3N120070K3S UJ3N120070K3S ECAD Model UnitedSiC Power Field-Effect Transistor, 33.5A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
UJ3C120040K3S UJ3C120040K3S ECAD Model UnitedSiC Power Field-Effect Transistor, 65A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L

high power fet amplifier schematic Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 3 phase bridge fully controlled rectifier

Abstract: 1K Ohm resistor 1/8W 5V power supply using bridge rectifier circuit drawing of digital multimeter capacitor 470uf 16v bridge rectifier smd digital multimeter circuit 1206 smd resistor 1206 smd 100 ohm resistor 15A Adjustable Positive Voltage Regulator
Text: · Bootstrap A bootstrap circuit will be required if the high side FET driver supply voltage (VCX) is not at least 5 volts greater than the PWM input voltage ( high side FET drain voltage). A typical , , 5, or 12 volts to the high side FET drain. Only one of the three can be installed per phase with , schematic are actually jumper wires due to the high currents that can flow in these paths. These are only , input voltage range includes voltages less than 4.5 or more than 6 volts then the high side FET drain


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PDF LX1671/LX1672 LX1671 3 phase bridge fully controlled rectifier 1K Ohm resistor 1/8W 5V power supply using bridge rectifier circuit drawing of digital multimeter capacitor 470uf 16v bridge rectifier smd digital multimeter circuit 1206 smd resistor 1206 smd 100 ohm resistor 15A Adjustable Positive Voltage Regulator
2002 - c25 rectifier

Abstract: LX1671 transistor c1213 kd smd transistor smd transistor 2d C25 02D FET Transistor Guide Variable resistor 10K ohm LX1672 CR78 diode
Text: · Bootstrap A bootstrap circuit will be required if the high side FET driver supply voltage (VCX) is not at least 5 volts greater than the PWM input voltage ( high side FET drain voltage). A typical , , 5, or 12 volts to the high side FET drain. Only one of the three can be installed per phase with , schematic are actually jumper wires due to the high currents that can flow in these paths. These are only , input voltage range includes voltages less than 4.5 or more than 6 volts then the high side FET drain


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PDF LX1671/LX1672 LX1671 c25 rectifier transistor c1213 kd smd transistor smd transistor 2d C25 02D FET Transistor Guide Variable resistor 10K ohm LX1672 CR78 diode
2002 - C2331

Abstract: LX1671 LX1671CLQ LX1671CPW LX1672 LX1672-03CLQ LX1672-03CPW LX1672-05CPW LX1672-06CLQ transistor c1213
Text: · Bootstrap A bootstrap circuit will be required if the high side FET driver supply voltage (VCX) is not at least 5 volts greater than the PWM input voltage ( high side FET drain voltage). A typical , , 5, or 12 volts to the high side FET drain. Only one of the three can be installed per phase with , schematic are actually jumper wires due to the high currents that can flow in these paths. These are only , input voltage range includes voltages less than 4.5 or more than 6 volts then the high side FET drain


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PDF LX1671/LX1672 LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, LX1672-06CLQ LX1671 C2331 LX1671CLQ LX1671CPW LX1672 LX1672-03CLQ LX1672-03CPW LX1672-05CPW transistor c1213
2002 - Not Available

Abstract: No abstract text available
Text: circuit will be required if the high side FET driver supply voltage (VCX) is not at least 5 volts greater than the PWM input voltage ( high side FET drain voltage). A typical configuration is to use +12 , . Input Voltage Jumpers There are three resistors shown in series with each high side FET for the PWMs , high side FET drain. Only one of the three can be installed per phase with the others left open , input voltage range includes voltages less than 4.5 or more than 6 volts then the high side FET drain


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PDF LX1671/LX1672 LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, LX1672-06CLQ LX1671
high power fet amplifier schematic

Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Text: the signal level is amplified using DC power . An amplifier with high D but no gain is not very useful , Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers (HPAs) to , to lose track of the fact that most of the power characteristics of a GaAs MESFET amplifier are


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PDF 30FETs 20FETs 12-Watt high power fet amplifier schematic GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
2007 - 2SC2604

Abstract: SC260 FDD6672A FET MARKING SC2604 voltage-mode pwm
Text: Top Box Auxiliary Supplies Peripheral Card Supplies Industrial Power Supply High Density DC/DC , power supply applications. It features input disconnect FET driver allowing power source and load , use in high efficiency, boosted voltage, DC/DC power supplies. allow a complete shutdown of the , a 400kHz oscillator, a PWM comparator, a voltage error amplifier , and a FET driver. The boost , voltage differentials must be understood and minimized. 1) The high power parts of the circuit should be


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PDF SC2604 800mA 400kHz 200uA -40oC SC2604 2SC2604 SC260 FDD6672A FET MARKING voltage-mode pwm
2009 - AMPLIFIER AND COMPARATOR CIRCUITS

Abstract: LMP860X LMV762 "Current-Sense Amplifiers" inductive sensor oscillator circuit multi vibrator circuit LMP8277 LMP8601 LMP8601Q Q100
Text: and the LMP8277and LMP8278 High Common Mode 14x Gain Precision Current Sensing Amplifier . The board , the on board oscillator, FET control circuit and the on board LMP8601 parts.This power supply , . This is used for driving the on board FET switches. The schematic of the on board oscillator , the demo board. (e.g. FET , Capacitors, Sense Resistors etc.) HIGH SIDE SWITCHING APPLICATIONS The , steady ' high ' drive signal the voltage over R17 will decay below the minimum high input level of the FET


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PDF AN-1923 AMPLIFIER AND COMPARATOR CIRCUITS LMP860X LMV762 "Current-Sense Amplifiers" inductive sensor oscillator circuit multi vibrator circuit LMP8277 LMP8601 LMP8601Q Q100
2004 - LT6210

Abstract: FET differential amplifier circuit 2N7002 DFN-10 LT6211 MSOP-10 diamond circuit
Text: each amplifier from a high speed to a low power mode. rents is shown in Figure 1. Transient , . Circuit Operation Figure 5 shows the simplified schematic of a single amplifier . Transistors Q1 and Q2 , connection to ground, individual resistors from the FET to each amplifier 's ISET pin are recommended to , connecting one or more external FET gates and a capacitor to the PG out28 Low Power 1000 Full Speed , DESIGN FEATURES Flexible, High Speed Amplifiers by John Morris and Glen Brisebois Fit Many


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PDF LT6210 LT6211 100mVP-P FET differential amplifier circuit 2N7002 DFN-10 MSOP-10 diamond circuit
2007 - SC2604

Abstract: C1010 voltage-mode pwm
Text: for boost DC/DC power supply applications. It features input disconnect FET driver allowing power , Auxiliary Supplies Peripheral Card Supplies Industrial Power Supply High Density DC/DC Conversion Typical , use in high efficiency, boosted voltage, DC/DC power supplies. As shown in Figure 2, the PWM control , FET driver. The boost converter output voltage is fed back to FB (error amplifier negative) and is , voltage differentials must be understood and minimized. 1) The high power parts of the circuit should be


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PDF SC2604 SC2604 C1010 voltage-mode pwm
2003 - high power fet amplifier schematic

Abstract: SC2602S MBR0520 SC2602 SC2602A SC2602ASTR SC2602STR
Text: www.semtech.com SC2602/SC2602A POWER MANAGEMENT Typical Characteristics (Cont.) Error Amplifier Schematic , N-channel power switches. Synchronous operation for high efficiency (95%) RDS(ON) current sensing , voltage. Over voltage protection. High side driver output. Power ground. Low side driver output , voltage, the comparator output goes high . This pulls DL low, turning off the low-side FET , and DH is pulled high , turning on the high-side FET (once the cross-current control allows it). When the


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PDF SC2602/SC2602A SC2602 SC2602A SC2602s S0-14 high power fet amplifier schematic MBR0520 SC2602ASTR SC2602STR
2006 - fet amplifier schematic

Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
Text: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT , savings in board area. III. The Die-Level Amplifier Design Figure 2 shows the simplified schematic of , . Simplified schematic of each amplifier channel 2 Q1 STAGE R R1 PORT PA_ON NUM=1 GsAsFET FET5 , schematic of the first stage amplifier MLOC TL17 BONDW1 WIRESET6 Q2 STAGE PORT RF_IN NUM , is adopted. The transistor ( FET ) Q1 is connected as a conventional common-source amplifier and


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PDF XC1900E-03 AV01-0258EN fet amplifier schematic high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
1998 - HMMC-5002

Abstract: No abstract text available
Text: discussed in this application note is the HMMC5027 GaAs MMIC amplifier , which is a high power version of the , -5026 schematic in Figure 1 for the following discussion. The RF input drives the lower FET of each stage of the , used with an external capacitor to extend the lower frequency range of the amplifier . The schematic of , screening levels of the same GaAs MMIC amplifier . The HMMC-5021 has typical RF specifications, the HMMC , this application note. 2.0 Device Schematic and Topology The device topology and schematic for the HMMC


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PDF HMMC-5021, HMMC-5022, HMMC-5026, HMMC-5027 HMMC5021/22/26 HMMC-5021 HMMC-5022 HMMC5026 HMMC-5021/22/6 HMMC-5002
2005 - Not Available

Abstract: No abstract text available
Text: % Power Added Efficiency –45 dBc ACPR Module Schematic Diagram Module Substrate Q1 Die Carrier , protocol, thermal environment, etc.), the number of via holes can be reduced. High average power , PRELIMINARY PFM21030 SPECIFICATION 2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode , thermally coupled sense FETs simplify the task of bias temperature compensation of the overall amplifier , module. Optimized internal construction supports low FET channel temperature for reliable operation


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PDF PFM21030 PFM21030SM
2000 - high power fet audio amplifier schematic

Abstract: 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd
Text: 7 8 9 10 11 12 13 14 Part Description IC, LX1711 Class D Audio Power Amplifier Inductor, 1.0uH SMD Power Inductor Inductor, 10.5uH SMD High Current Power Inductor Transistor, FET , NDS0605 SOT23 General Purpose P Channel Transistor, FET , IRF5305 TO220 Power P Channel Transistor, FET , LXE1711-100 Evaluation Board is a fully functional mono class-D amplifier . Connection to a single power , amplifier will support continuous output power levels up to >110W into 2 ohm load (<1% THD+N). Board


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PDF LXE1711-100 high power fet audio amplifier schematic 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 150W TRANSISTOR AUDIO AMPLIFIER IRF5305 Speaker 80W LXE1711 smd transistor p5 SMD TRANSISTOR fet Transistor 03 smd
SM4W103-ND

Abstract: zener diode on 822 GRM42 PFM18030 PFM18030F PFM18030SM SM4W502-ND grm39 C3345
Text: Average Output Level 20% Power Added Efficiency ­49 dBc ACPR Module Schematic Diagram Module , (signal protocol, thermal environment, etc.), the number of via holes can be reduced. High average power , PRELIMINARY PFM18030 SPECIFICATION 18051880 MHz, 30W, 2Stage Power Module EnhancementMode , overall amplifier . The module includes RF input, interstage, and output matching elements. The source , thermal sinking of the module. Optimized internal construction supports low FET channel temperature


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PDF PFM18030 PFM18030SM PFM18030SM SM4W103-ND zener diode on 822 GRM42 PFM18030F SM4W502-ND grm39 C3345
2006 - LL1005-F1N5S

Abstract: mga x MGA-425P8 LL1005-F15NK 9B00 5.1 amplifier circuit diagram
Text: Medium Power Amplifier for 5.1 to 5.3 GHz Applications using the MGA-425P8 Application Note , operation at high temperatures. 8 2 NC 7 1 RFin The schematic diagram of the MGA-425P8 is , the MGA425P8 in a moderate power amplifier for the 5.1 to 5.3 GHz frequency range. The amplifier is , schematic diagram describing the MGA-425P8 amplifier is shown in Figure 3. The parts list for the demo , challenges in matching a large gate width FET at high frequencies is the very low input impedance of the


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PDF MGA-425P8 MGA-425P8 LL1005-F1N5S mga x LL1005-F15NK 9B00 5.1 amplifier circuit diagram
2005 - SM4W103-ND

Abstract: diode t25 4 j6 sot23 theta jc value SM4W-5 SM4W502-ND potentiometer 10kohms
Text: protocol, thermal environment, etc.), the number of via holes can be reduced. High average power , operational amplifier maintains constant current through the Sense FET , and thus constant quiescent bias for , PRELIMINARY PFM18030 SPECIFICATION 1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode , amplifier . The module includes RF input, interstage, and output matching elements. The source and load , . Optimized internal construction supports low FET channel temperature for reliable operation. Package Type


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PDF PFM18030 PFM18030SM SM4W103-ND diode t25 4 j6 sot23 theta jc value SM4W-5 SM4W502-ND potentiometer 10kohms
1997 - 7660 harris

Abstract: 840 rectifier 820 860 2N3906 SOIC-16 TQ9147B
Text: the test circuit schematic above. This circuit accurately sets the bias point for the power amplifier , ) power FET amplifier . It has two stages of gain and features 32 dBm (1.6 Watt) output power at 60 , ICs RF IN 2-Stage AMPS Power Amplifier IC VG1 VG2 Features s s +32 dBm Power , is a highly efficient power amplifier developed for portable terminals operating in the AMPS , either VD1 or VGG as control voltages. The power amplifier is packaged in a space-efficient, low-cost


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PDF TQ9147B SO-16 TQ9147B po075 7660 harris 840 rectifier 820 860 2N3906 SOIC-16
2005 - Cree Microwave

Abstract: PFM21030 PFM21030F PFM21030SM zener diode c20 C3354
Text: protocol, thermal environment, etc.), the number of via holes can be reduced. High average power , operational amplifier maintains constant current through the Sense FET , and thus constant quiescent bias for , PRELIMINARY PFM21030 SPECIFICATION 2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode , thermally coupled sense FETs simplify the task of bias temperature compensation of the overall amplifier , module. Optimized internal construction supports low FET channel temperature for reliable operation


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PDF PFM21030 PFM21030SM Cree Microwave PFM21030F PFM21030SM zener diode c20 C3354
2001 - GaAs MMIC ESD, Die Attach and Bonding Guidelines

Abstract: RDE capacitor HMMC-5021 HMMC-5022 HMMC-5025 HMMC-5026 HMMC-5027
Text: -5027 MESFET-based GaAs MMIC amplifier , a high power version of the HMMC-5026; and the HMMC-5025, a PHEMT-based , 48 µm gate-width per FET . Refer to the HMMC-5026 schematic in Figure 1 for the following discussion. The RF input drives the lower FET of each stage of the MMIC amplifier from a series of , capacitor to extend the lower frequency range of the amplifier . 93 The schematic of the HMMC-5027 is , -5027 TWA Schematic and Topology 56_A.fm 95 FET , and a shunt 30K resistor which terminates the


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PDF HMMC-5021, HMMC-5022, HMMC-5026, HMMC5027 HMMC-5025 HMMC-5021/22/26 HMMC-5021/22/26 GaAs MMIC ESD, Die Attach and Bonding Guidelines RDE capacitor HMMC-5021 HMMC-5022 HMMC-5026 HMMC-5027
1993 - mga64135

Abstract: 1 to 3 GHz bandpass filter wide band rfc 33 gaas fet micro-X Package Transistor 35 MICRO-X 64135 MGA-641 31883
Text: surface-mountcompatible package, and requires only a single-polarity power supply. The MGA-64135 combines the high , of two GaAs FET feedback amplifier stages. As noted, feedback techniques are used throughout , performance benefits in GaAs MMICs, the design of a GaAs FET feedback amplifier requires a slightly different , desirable to incorporate series feedback in a FET amplifier design, since it would lower gain to an , of high frequency gain. Therefore, obtaining a particular gain-bandwidth product in a GaAs FET


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PDF MGA-64135 085-inch 5091-7468E 5967-5922E mga64135 1 to 3 GHz bandpass filter wide band rfc 33 gaas fet micro-X Package Transistor 35 MICRO-X 64135 MGA-641 31883
2002 - marking date code Sanyo

Abstract: MBRA130L SC1104A SC1104B SC1104XISTR Si4874DY Si4884DY SANYO marking date code Sanyo date code marking Sanyo lot code Capacitor
Text: power supply applications. A simple, fixed frequency high efficiency buck regulator can be implemented , Peripheral card supplies Industrial power supplies High density DC/DC conversion The SC1104A/B operates , Bootstrap, high side driver. 6 PHASE 7 VC C 8 SENSE Pin Function Error amplifier , voltage, the comparator output goes high . This pulls DL low, turning off the low-side FET . After a short delay ("dead time"), DH is pulled high , turning on the high-side FET . When the oscillator voltage


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PDF SC1104A/B SC1104A/B 300kHz SC1104A) 600kHz SC1104B) marking date code Sanyo MBRA130L SC1104A SC1104B SC1104XISTR Si4874DY Si4884DY SANYO marking date code Sanyo date code marking Sanyo lot code Capacitor
2008 - SLUA476

Abstract: UC3832 SOIC-16 FDD3706
Text: source voltage, this bias needs to be high enough to drive the selected NMOS FET into saturation to , . PMP - DC/DC Converters ABSTRACT This application note describes the design of a linear power supply solution using the UC3832 linear controller and an N-channel pass FET . Setting the current limit, FET selection, voltage loop compensation, setting the RC timer, and configuring the Vadj pin are , ILoad-Max. If not, pick a smaller sense resistor. Selecting a FET The critical NMOS FET characteristics


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PDF SLUA476 UC3832 SOIC-16) SLUA476 SOIC-16 FDD3706
2003 - C1608X7R1H104KT

Abstract: K 2645 schematic circuit RESISTOR AXIAL transistor r29 on semiconductor C1608X7R1H104KT TDK TSL1315S-101K2R5 MMSZ5248BT1 FQP12N60 C3216X5R1A475KT K 2645 schematic
Text: of the pass transistor will be high , and the FET will be fully enhanced. The current into the VCC , , the FET will cease conduction, and all of the VCC power will be supplied via the bias circuit from , output of the power error amplifier will go to some level above ground. This signal will then override the signal from the voltage error amplifier (labeled "error amp" on the schematic ), and will dominate , addition to excellent power factor, this chip offers fixed frequency operation in continuous and


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PDF AND8106/D NCP1650. C1608X7R1H104KT K 2645 schematic circuit RESISTOR AXIAL transistor r29 on semiconductor C1608X7R1H104KT TDK TSL1315S-101K2R5 MMSZ5248BT1 FQP12N60 C3216X5R1A475KT K 2645 schematic
mu24 dc

Abstract: SWT-2
Text: FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration density 32V , FET input and bipolar input operational amplifier macrocells alongside uncommitted thin film , part supports customer breadboarding using exact FET devices found on the RFA120. The schematic , 100 RFA120 Linear FET Macrocell Array MOPA Schematic Diagrams MOPA1 Op Amp MOPA4 Op Amp , Schematic Diagrams MCMP3 Comparator Itaytfcen 13 Linear FET Macrocell Array RFA120 SWT1


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PDF r88uct RFA120 mu24 dc SWT-2
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