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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1102ACN8#PBF Linear Technology LT1102 - High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100); Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1102CN8#PBF Linear Technology LT1102 - High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100); Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1102IN8#PBF Linear Technology LT1102 - High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100); Package: PDIP; Pins: 8; Temperature Range: -40°C to 85°C
LT1102ACN8 Linear Technology LT1102 - High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100); Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1102CN8 Linear Technology LT1102 - High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100); Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1102IN8 Linear Technology LT1102 - High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100); Package: PDIP; Pins: 8; Temperature Range: -40°C to 85°C

high gain PNP RF TRANSISTOR Datasheets Context Search

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1997 - Dual Long-Tailed Pair Transistor Array

Abstract: gilbert cell differential pair pnp 8 transistor array pnp array HFA3128 HFA3127 HFA3102 HFA3101 HFA3096 transistors ON Semiconductor
Text: and PNP transistors with an ft of 5.5GHz. The parameter ft is a measure of the transistor 's high , the amplification. This circuit nearly achieves the maximum transistor gain because the bias , RF - Q4 R2 15k Discrete transistors are hard to use because each transistor is , tailed transistor pair; a configuration often used to make voltage controlled gain and differential , Harris Semiconductor No. AN9744 Harris Linear July 1997 RF Up/Down Conversion Is


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PDF AN9744 1-800-4-HARRIS Dual Long-Tailed Pair Transistor Array gilbert cell differential pair pnp 8 transistor array pnp array HFA3128 HFA3127 HFA3102 HFA3101 HFA3096 transistors ON Semiconductor
1999 - Not Available

Abstract: No abstract text available
Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 AN9315.1 Introduction [ /Title (AN93 15.1) /Subject ( RF Amplifier Design Using HFA30 46 , the pinouts of the four different products. Typical NPN and PNP transistor characteristics are shown , . MEASURED CHARACTERISTICS OF THE HIGH GAIN LOW-NOISE AMPLIFIER 2 Application Note 9315 Wideband , amplifying transistor . LCHOKE THROUGH HOLE CBP R1 R4 R2 CBP OUTPUT HFA3096 RE R 3 CBP C1 RF C2 L1


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PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA30 HFA31 HFA3046/3096/3127/3128
1999 - Q545

Abstract: rf transistors amplifier design and matching network SOI series shunt HFA3046 HFA3096 HFA3128 uhf amplifier design Transistor TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ 6 "transistor arrays" ic
Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note , RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures , transistors on it. Figure 1 shows the pinouts of the four different products. Typical NPN and PNP transistor , FIGURE 3. MEASURED CHARACTERISTICS OF THE HIGH GAIN LOW-NOISE AMPLIFIER 2 2 Application Note , amplifying transistor Q2 for good temperature stability. CBP RF VO CBP RS RL LCHOKE + -


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PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz Q545 rf transistors amplifier design and matching network SOI series shunt HFA3046 HFA3096 uhf amplifier design Transistor TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ 6 "transistor arrays" ic
2005 - Transistor SMD SOT363 SC70

Abstract: Transistor SMD SOT363 SC70 SC88 TRANSISTOR SMD CODE PACKAGE SOT363 DMX DECODER IC transistor SOT363 SOT343R reset PBLS4004Y PBLS4003V BFG310W/XR RF SMD transistors pnp
Text: .), radar detectors, pagers and satellite television tuners (SATV). · · · · RF High gain Low , standard double transistor . Internally the transistors are fully isolated.The matched PNP equivalent of , ranges combine a low VCEsat PNP BISS transistor with an NPN resistor-equipped transistor (RET) to , driven by only a fraction of a mA · Lowest losses in the pass-transistor by using PNP BISS transistor , VCEsat PNP BISS transistor and NPN resistor-equipped transistor in one package · Low `threshold'


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PDF PIP212-12M BCM847BS BCM857BS PBLS15xx PBLS40xx P89LPC9102 P89LPC9103 Transistor SMD SOT363 SC70 Transistor SMD SOT363 SC70 SC88 TRANSISTOR SMD CODE PACKAGE SOT363 DMX DECODER IC transistor SOT363 SOT343R reset PBLS4004Y PBLS4003V BFG310W/XR RF SMD transistors pnp
2000 - 900mhz-1800mhz rf frequency amplifier circuit

Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt
Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM , on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed , and PNP transistor characteristics are shown in Table 1. 16 NC 1 13 1 2 HFA3096 Q5 , CHARACTERISTICS OF THE HIGH GAIN LOW-NOISE AMPLIFIER 3-2 Application Note 9315 Wideband Amplifier OUTPUT , the PNP transistors (Q4 and Q5) available on the HFA3096, to bias amplifying transistor Q2 for good


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PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 SOI series shunt
germanium transistors PNP

Abstract: IBM43RF0100 FMMT2907ATA SiGe PNP SiGe PNP transistor TRANSISTOR MAKING LIST pnp germanium transistor SiGe RF TRANSISTOR lowest noise audio NPN J1 TRANSISTOR
Text: result in a transistor with high gain , low noise, exceptional linearity, and low power consumption in a , IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium (SiGe) NPN transistor , at 1.9 GHz, with a nominal gain of 12dB and a noise figure of 1.5dB at VCC = +3.0 Vdc. The RF , Noise Transistor are available. These boards allow the user to investigate high linearity and low noise , evaluation board uses PNP transistor Q2 with the diode connected PNP to function as a minimal


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PDF IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP FMMT2907ATA SiGe PNP SiGe PNP transistor TRANSISTOR MAKING LIST pnp germanium transistor SiGe RF TRANSISTOR lowest noise audio NPN J1 TRANSISTOR
1999 - HFA3101

Abstract: AN9744 gilbert cell differential pair sot36 transistor arrays 5v Transistor Arrays NPN General Purpose Transistor
Text: higher cost equipment, because each transistor is limited in the power gain it can supply. Also, all of , . Some gain is lost because of this bias circuitry, so multistage transistor designs are required for all , parameter ft is a measure of the transistor 's high frequency performance, and it is often unsymmetrical (NPN , maximum transistor gain because the bias stability is achieved through transistor matching rather than , transistor pair; a configuration often used to make voltage controlled gain and differential amplifier


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PDF AN9744 HFA3101 AN9744 gilbert cell differential pair sot36 transistor arrays 5v Transistor Arrays NPN General Purpose Transistor
TRANSISTOR 30GHZ

Abstract: "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode
Text: Process HJ: A 30 GHz NPN and 20 GHz PNP Complementary Bipolar Process for High Linearity RF , suitable for RF applications, which features high frequency NPN and PNP transistors of 30GHz and 20GHz , filters for high bandwidths. The high performance PNP of this process has been designed with comparable , transistors, lateral PNP transistors, high and low value polysilicon resistors, low value capacitors (with an , complementary process comprises a high performance NPN and a new, fully integrated PNP . The inclusion of the


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PDF 30GHz 20GHz, TRANSISTOR 30GHZ "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode
1999 - AN9744

Abstract: gilbert cell differential pair GILBERT CELL HFA3101 Silicon Bipolar Transistor Q6 an-9744 9744 sot36 pnp 8 transistor array HFA3128
Text: transistor 's high frequency performance, and it is often unsymmetrical (NPN vs PNP ) as shown here. There , transistor gain because the bias stability is achieved through transistor matching rather than negative , specifications imposed by higher cost equipment, because each transistor is limited in the power gain it can , for DC stability. Some gain is lost because of this bias circuitry, so multistage transistor designs , RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744


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PDF AN9744 HFA3101 AN9744 gilbert cell differential pair GILBERT CELL Silicon Bipolar Transistor Q6 an-9744 9744 sot36 pnp 8 transistor array HFA3128
2009 - rf transistors amplifier design and matching network

Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 PNP monolithic Transistor Arrays 6 "transistor arrays" ic ISL73128RH ISL73127RH ISL73096RH
Text: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor , . Figure 1 shows the pinouts of the three different products. Typical NPN and PNP transistor , CHARACTERISTICS OF THE HIGH GAIN LOW-NOISE AMPLIFIER FIGURE 3A. GAIN 2 AN1503.0 Application Note , bias amplifying transistor Q2 for good temperature stability. RF VO CBP RS LCHOKE + - , amplifying transistor . R2 CBP ISL73096RH RE R 3 C1 L1 OUTPUT C3 RF CBP C2


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PDF ISL73096RH, ISL73127RH, ISL73128RH ISL73096RH ISL73096RH/ISL73127RH/ 800MHz 2500MHz) 10MHz 600MHz rf transistors amplifier design and matching network silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 PNP monolithic Transistor Arrays 6 "transistor arrays" ic ISL73127RH ISL73096RH
2000 - 9744

Abstract: 974-4 AN9744 gilbert cell 5.1 transistor amplifier circuit diagram PNP Transistor Arrays Intersil HFA3127 gilbert cell differential pair HFA3128 HFA3096
Text: , while Q2 does the amplification. This circuit nearly achieves the maximum transistor gain because the , by higher cost equipment, because each transistor is limited in the power gain it can supply. Also , stability. Some gain is lost because of this bias circuitry, so multistage transistor designs are required , an ft of 5.5GHz. The parameter ft is a measure of the transistor 's high frequency performance, and , tailed transistor pair; a configuration often used to make voltage controlled gain and differential


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1997 - gilbert cell differential pair

Abstract: HFA3101 5.1 transistor amplifier circuit diagram pnp 8 transistor array AN9744 Transistor Array differential amplifier 974-4 HFA3127 HFA3096 HFA3046
Text: measure of the transistor 's high frequency performance, and it is often unsymmetrical (NPN vs PNP ) as , specifications imposed by higher cost equipment, because each transistor is limited in the power gain it can , for DC stability. Some gain is lost because of this bias circuitry, so multistage transistor designs , transistor gain because the bias stability is achieved through transistor matching rather than negative , RF Up/Down Conversion Is Simplified By Linear Arrays ® Application Note June 2004


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PDF HFA3101 gilbert cell differential pair HFA3101 5.1 transistor amplifier circuit diagram pnp 8 transistor array AN9744 Transistor Array differential amplifier 974-4 HFA3127 HFA3096 HFA3046
1997 - SIGNAL PATH designer

Abstract: No abstract text available
Text: stabilization resistor. A simple realization using a resistively-biased PNP transistor as a current source is , of the PNP bias transistor . R 3 provides a "bleed path" for any excess bias current; R1 R2 ( 1 )* Id D1 RC + VCC + VCC + VCC RC ­ RC ­ RF CHOKE (OPTIONAL) 1 µF R3 1 µF PNP 1 µF RFIN , temperature of the emitter-to-base junction of the PNP bias transistor . For this reason, when it is included it is often realized using the E-B junction of a second PNP transistor identical to the bias


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PDF 5091-6489E 5965-8669E SIGNAL PATH designer
1997 - MSA-06

Abstract: MSA-07 SIGNAL PATH designer
Text: realization using a resistively-biased PNP transistor as a current source is shown in Figure 4. In this circuit R1 and R 2 form a resistive divider that establishes the bias point of the PNP bias transistor , Vd OUTPUT BLOCKING CAPACITOR RF CHOKE BYPASS CAPACITOR V - Vd RC = CC Id PNP V , temperature of the emitter-to-base junction of the PNP bias transistor . For this reason, when it is included it is often realized using the E-B junction of a second PNP transistor identical to the bias


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1999 - MSA-06

Abstract: MSA-07 PNP Monolithic Transistor Pair SIGNAL PATH designer
Text: with a bias stabilization resistor. A simple realization using a resistively-biased PNP transistor as , establishes the bias point of the PNP bias transistor . R 3 provides a "bleed path" for any excess bias , CAPACITOR V - Vd RC = CC Id PNP RF CHOKE RFIN INPUT BLOCKING CAPACITOR MSA Figure , the voltage variation with temperature of the emitter-to-base junction of the PNP bias transistor , across R C also increases, turning off the E-B junction of the PNP transistor , and hence decreasing


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PDF 5091-6489E 5965-8669E MSA-06 MSA-07 PNP Monolithic Transistor Pair SIGNAL PATH designer
p331 TRANSISTOR

Abstract: Bipolar HJ transistor 5ghz pnp TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR Transistor P331 pnp 8 transistor array NPN transistor which has frequency greater than 2 Schematics 5250 p349
Text: . al. "Process HJ: A 30GHz NPN and 20GHz PNP complementary bipolar process for high linearity RF , A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices , meet the challenge of future 5GHz RF communications systems we have developed a high performance , full suite of passive components. The high performance PNP of this process has been designed with , transistors, lateral PNP transistors, high and low value polysilicon resistors, low value capacitors (with an


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PDF 45GHz 20GHz 30GHz pp164-167, 20ps/G p331 TRANSISTOR Bipolar HJ transistor 5ghz pnp TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR Transistor P331 pnp 8 transistor array NPN transistor which has frequency greater than 2 Schematics 5250 p349
2006 - ADA-4789

Abstract: an5051 Agilent RF amplifier SOT-89 AN-S003 0805CS-681XGLC rf choke RK73Z1JLTD GRM1885C1H681JA01D GRM1885C1H390JA01D common base amplifier circuit
Text: the high frequency RF performance of the ADA-4789. The layout is shown with stencil layout , gain can be adjusted by varying Id. Rc = 0.5V Id 0.5V R2= · pnp 10·Id (Vcc - 0.5V ) - , resistors R4 and the PNP transistor connected to form a diode by connecting the base and collector together and R2 form a potential divider circuit to set the base voltage of the bias PNP transistor . The diode connected PNP transistor is used to compensate for the voltage variation with temperature of


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PDF ADA-4789 OT-89 52oC/W 17dBm 900MHz, AN-S003: AN-5051: ADA-4789 an5051 Agilent RF amplifier SOT-89 AN-S003 0805CS-681XGLC rf choke RK73Z1JLTD GRM1885C1H681JA01D GRM1885C1H390JA01D common base amplifier circuit
1996 - 900mhz-1800mhz rf frequency amplifier circuit

Abstract: PNP UHF transistor uhf transistor amplifier HFA3046 complementary npn-pnp PNP transistor 263 HFA3127 uhf amplifier design Transistor UHF pnp transistor silicon bipolar transistor rf power amplifier
Text: PNP transistor characteristics are shown in Table 1. 16 NC 1 14 Q1 3 4 HFA3096 Q3 , THE HIGH GAIN LOW-NOISE AMPLIFIER 0 0 1 2 FREQUENCY (GHz) 3 FIGURE 3A. GAIN 10-86 , advantage of the PNP transistors (Q4 and Q5) available on the HFA3096, to bias amplifying transistor Q2 , Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046


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PDF AN9315 HFA3046, HFA3096, HFA3127, HFA3128 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit PNP UHF transistor uhf transistor amplifier HFA3046 complementary npn-pnp PNP transistor 263 HFA3127 uhf amplifier design Transistor UHF pnp transistor silicon bipolar transistor rf power amplifier
2006 - AN-S003

Abstract: ANS003 SIGNAL PATH designer
Text: resistivelybiased PNP transistor as a current source is shown in Figure 4. In this circuit R1 and R 2 form a resistive divider that estab lishes the bias point of the PNP bias transistor . R 3 provides a "bleed path , transistor . For this reason, when it is included it is often realized using the EB junction of a second PNP , volt drop across R C. The PNP transistor is acting in the saturated mode with both junctions forward , effect of the PNP bias transistor operating in the saturated mode is that this bias requires some extra


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PDF 5091-6489E 5965-8669E AN-S003 ANS003 SIGNAL PATH designer
2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA motorola european master selection MOTOROLA 2N5179 2n4958 Y parameters of transistors
Text: 2.0 500 5.0 15 500 12 40 200 ' PNP "Typ HIGH VOLTAGE RF DEVICES The devices listed below are , 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , 2N5032 PNP NPN MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-67 RF SMALL-SIGNAL TRANSISTORS (continued , requirements. Typical Gain-Bandwidth Product versus Collector Current RF Small-Signal Transistors Motorola small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with


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PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 high gain PNP RF TRANSISTOR 2N4957 2N3866 MOTOROLA 2N2857 MOTOROLA motorola european master selection MOTOROLA 2N5179 2n4958 Y parameters of transistors
MRF542

Abstract: mrf544 transistor bfr96 MRF545 BFR90 transistor high gain PNP RF TRANSISTOR MRF543 MRF511 motorola 2N4427 2n4427
Text: 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , SELECTION GUIDE 3-66 RF SMALL-SIGNAL TRANSISTORS (continued) TO-72 METAL CAN Gain - - BW Noise Figure , MRF904 4.0 15 1.5 450 5.0 16 450 15 30 200 MRF914 4.5 20 2.0 500 5.0 15 500 12 40 200 ' PNP "Typ HIGH VOLTAGE RF DEVICES The devices listed below are designed for high voltage, high fj applications similar to those in medium and high resolution colour video display monitors. Gain — BW h ■c Case


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PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF542 mrf544 transistor bfr96 MRF545 BFR90 transistor high gain PNP RF TRANSISTOR MRF543 MRF511 motorola 2N4427 2n4427
CY-22-pn

Abstract: CY-21-PN cy17 CY-29-PN CY-27-PN EQ30 rt 108 power transistor AC 128 pnp transistor MS-RF22 CY-SV1
Text: transistor 2 PNP open-collector transistor 3 AC non-contact (thyristor) output Slit mask (For thru-beam , Model No. Supply voltage Output NPN open-collector transistor CY-27-PN PNP open-collector transistor CY-29-PN PNP open-collector transistor CY-22 NPN open-collector transistor CY-22-PN PNP open-collector transistor 1.5m (Note 1) Thru-beam 120mm CY , ) Diffuse reflective Retroreflective PNP open-collector transistor CY-27 DC supply type NPN


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PDF EQ-20 EX-40 EQ-30 RX-LS200 120mm RT-610 8-M30 MS-RF23 RF-230 CY-22-pn CY-21-PN cy17 CY-29-PN CY-27-PN EQ30 rt 108 power transistor AC 128 pnp transistor MS-RF22 CY-SV1
2003 - equivalent to TRANSISTOR BC 187

Abstract: transistor bc 187 pin details BC 148 transistor IC 4543 TRANSISTOR BC 158 pnp ic of 4543 AN-S011 ADA-4543 TRANSISTOR BC 158 MCR03J220
Text: impair the high frequency RF performance of the ADA-4543. The layout is shown with a footprint of a , divider circuit to set the base voltage of the bias PNP transistor . The diode connected PNP transistor is used to compensate for the voltage variation with temperature of bias PNP transistor . R3 , increase, the voltage drop across Rc also increases, turning off the E-B junction of the PNP transistor , circuit operation, the PNP transistor should be kept out of saturation even when Vd is at its highest


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PDF ADA-4543 ADA-4543 SC-70 OT-343) 5988-9506EN AN-S001: AN-S002: AN-S003: AN-S011: equivalent to TRANSISTOR BC 187 transistor bc 187 pin details BC 148 transistor IC 4543 TRANSISTOR BC 158 pnp ic of 4543 AN-S011 TRANSISTOR BC 158 MCR03J220
1996 - TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 MSB81T1 triac MAC 97 AB solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Text: by the same product groupings in the RF Product Portfolio: low power and high power discrete , Transistor Dual GP NPN Transistor Dual GP PNP Transistor Dual GP PNP Transistor Dual Schottky Barrier , Phones - GSM, NADC, PDC · Cordless Phones - ISM · High Gain and High Efficiency · Off­chip , Amplifiers · High Isolation RF Amplifiers · VCOs · High Reverse Isolation · SOT­143 Surface Mount , comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low


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2003 - transistor bc 577

Abstract: TRANSISTOR BC 553 TRANSISTOR BC 158 pnp TRANSISTOR as BC 158 MCR03J220 TRANSISTOR BC 158 AN-003 ADA-4743 AN-S001 Basic MODAMP MMIC Circuit Techniques 4743
Text: impair the high frequency RF performance of the ADA-4743. The layout is shown with a footprint of a , resistors R1 and the PNP transistor connected to form a diode by connecting the base and collector together and R2 form a potential divider circuit to set the base voltage of the bias PNP transistor . The diode connected PNP transistor is used to compensate for the voltage Table 1. Effects of Rc on , E-B junction of the PNP transistor , and hence decreasing the bias current applied to the ADA. For


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PDF ADA-4743 ADA-4743 SC-70 OT-343) 5988-9289EN AN-S001: AN-S002: AN-S003: AN-S011: transistor bc 577 TRANSISTOR BC 553 TRANSISTOR BC 158 pnp TRANSISTOR as BC 158 MCR03J220 TRANSISTOR BC 158 AN-003 AN-S001 Basic MODAMP MMIC Circuit Techniques 4743
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