The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1064-2CN Linear Technology LTC1064-2 - Low Noise, High Frequency, 8th Order Butterworth Lowpass Filter; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1568IGN#PBF Linear Technology LT1568 - Very Low Noise, High Frequency Active RC, Filter Building Block; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C
LTC1064-2CSW#PBF Linear Technology LTC1064-2 - Low Noise, High Frequency, 8th Order Butterworth Lowpass Filter; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC6602IUF#TRPBF Linear Technology LTC6602 - Dual Matched, High Frequency Bandpass/Lowpass Filters; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LTC3775EMSE#TRPBF Linear Technology LTC3775 - High Frequency Synchronous Step-Down Voltage Mode DC/DC Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT1568IGN#TRPBF Linear Technology LT1568 - Very Low Noise, High Frequency Active RC, Filter Building Block; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C

high frequency diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
high frequency diode

Abstract: BULB 9005 "high frequency Diode"
Text: 9005 TUNG-SOL ULTRA HIGH FREQUENCY DIODE ACORN TYPE -PLATE ■CATHODE pin connections COATEO UN I POTENTIAL CATHODE HEATER 3.6 VOLTS 0.165 AMPERE AC OR DC GLASS BULB MÓUNTING POSITION - ANY THE 9005 IS AN ACORN TYPE DIODE INTENDED FOR USE AS AN ULTRA HIGH FREQUENCY DETECTOR. RATINGS* maximum ac plate voltage (rms) 117 volts maximum dc output current 1.0 ma. *INTERPRETED ACCORDING TO RMA , plate to heater (apPROX.) 0.2 (l|lf heater to cathode (approx.) 1.1 (l(lf resonant frequency


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PDF M8-210 high frequency diode BULB 9005 "high frequency Diode"
9999 DIODE

Abstract: high frequency diode Low frequency power transistor step recovery diode tunnel diode high frequency "high frequency Diode" diode tunnel transistor power audio
Text: frequency TRANSISTOR: power, audio frequency DIODE : tunnel TRANSISTOR: low power, high frequency DIODE , TRANSISTOR: power, high frequency The serial number consists of: · · A four digit number from 100 to 9999 , DEVICE: in a closed magnetic circuit PHOTO COUPLER DIODE : radiation sensitive DIODE : radiation generating THYRISTOR: low power TRANSISTOR: low power, switching THYRISTOR: power TRANSISTOR: power, switching DIODE : multiplier, e.g., varactor, step recovery DIODE : rectifying, booster DIODE : voltage reference or voltage


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transistor A 1013

Abstract: high frequency diode Low frequency power transistor 9999 DIODE diode nomenclature "high frequency Diode"
Text: : variable capacitance TRANSISTOR: low power, audio frequency TRANSISTOR: power, audio frequency DIODE : tunnel TRANSISTOR: low power, high frequency DIODE : oscillator and miscellaneous DIODE : magnetic sensitive HALL EFFECT DEVICE: in an open magnetic circuit TRANSISTOR: power, high frequency The serial , Cadmium-Sulphide) M N P Q R S T U X Y Z HALL EFFECT DEVICE: in a closed magnetic circuit PHOTO COUPLER DIODE : radiation sensitive DIODE : radiation generating THYRISTOR: low power TRANSISTOR: low power, switching


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SAS diode

Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width , frequency 3THz High breakdown voltage Low parasitics Low cost technology Main Characteristics Symbol Fco n BVak Parameter Typ 3 Cut-off frequency Unit THz Ideality factor 1.2 , . Microwave acceptance criteria are based on a 5µm finger diode . Static acceptance criteria Symbol


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PDF BES100 DSBES1008120 SAS diode "high frequency Diode" high frequency diode Monolithic System Technology BES100
"high frequency Diode"

Abstract: diode 9004 high frequency diode 1944 DIODE K9 k9 diode
Text: 9004 TUNG-SOL - ULTRA HIGH FREQUENCY DIODE ACORN TYRE HEATER -NO CONN.-HEATER - -CATHOOE -PLATE PIN CONNECTIONS COATED UN I POTENT I AL CATHODE HEATER 6.3 VOLTS 0.15 AMPERE AC OR DC GLASS BULB MOUNTING POSITION - ANY THE 9004 IS AN ACORN TYPE DIODE INTENDED FOR USE AS AN ULTRA HIGH FREQUENCY DETECTOR. RATINGS* MAXIMUM AC PLATE VOLTAGE (RMS) 117 VOLTS MAXIMUM DC OUTPUT CURRENT 5 MA , RESONANT FREQUENCY APPROXIMATELY 650 MC. plate 140 7 march 15 1944 TUBE DIMENSIONS COPYRIGHT 1944 BY


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PDF m8-210 "high frequency Diode" diode 9004 high frequency diode 1944 DIODE K9 k9 diode
SAS diode

Abstract: high frequency diode BES100 "high frequency Diode"
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width , frequency 3THz High breakdown voltage Low parasitics Low cost technology Main Characteristics Symbol Fco n BVak Parameter Typ 3 Cut-off frequency Unit THz Ideality factor 1.2 , . Microwave acceptance criteria are based on a 5µm finger diode . Static acceptance criteria Symbol


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PDF BES100 DSBES1008120 SAS diode high frequency diode BES100 "high frequency Diode"
un 1044

Abstract: high frequency diode 9006 STAA
Text: 9006 TUNG-SOL ULTRA HIGH FREQUENCY DIODE MIDGET TYPE COATED UN I POTENTIAL CATHODE -i-MAX. ht-r-4 mrnr .iti-'|6 i 32 HEATER 6.5 VOLTS 0.15 AMPERE AC OR DC GLASS BULB MINIATURE BUTTON 7 PIN BASE MOUNTING POSITION - ANY BOTTOM VIEW THE 9006 IS A MIDGET TYPE DIODE INTENDED FOR USE AS AN ULTRA HIGH FREQUENCY DETECTOR. RATINGS* MAXIMUM PEAK INVERSE PLATE VOLTAGE MAXIMUM PEAK PLATE CURRENT , CURRENT 270 100 5 VOLTS OHMS MA . RESONANT FREQUENCY APPROXIMATELY 700 MC. PLATE 1»09 MARCH 19 19Â


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diode nomenclature

Abstract: high frequency diode Low frequency power transistor "tunnel diode" oscillator "high frequency Diode"
Text: , switching, mixer DIODE : variable capacitance TRANSISTOR: low power, audio frequency TRANSISTOR: power, audio frequency DIODE : tunnel TRANSISTOR: low power, high frequency DIODE : oscillator, miscellaneous DIODE : magnetic sensitive HALL EFFECT DEVICE: in an open magnetic circuit TRANSISTOR: power, high frequency The , magnetic circuit PHOTO COUPLER DIODE : radiation sensitive DIODE : radiation generating THYRISTOR: low power TRANSISTOR: low power, switching THYRISTOR: power TRANSISTOR: power, switching DIODE : multiplier, e.g


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PDF TLHR5401AS12. diode nomenclature high frequency diode Low frequency power transistor "tunnel diode" oscillator "high frequency Diode"
high frequency diode

Abstract: "high frequency Diode"
Text: . Pin 1: Cathode, Pin 2 : Anode 1, Pin 3: Anode 2. High Frequency Diode Switches for Bandswitching , Tuner Diodes and Diode Switches Variable-Capacitance Tuner Diodes (SOT23 or SOD123 or SOD323 Plastic Package) Delivered in matched sets. Type Package Capacitance Capacitance Ratio Seríes Resistance Reverse Current min.pF BB404A* BB404B BB404C BB404D BB404E BB814* BB721 BB723 BB729 BB730 BB731 BB702 BB701S BB721S BB723S BB729S BB730S BB731S SOT23 SOT23 SOT23 SOT 23 SOT23 SOT 23 SOD 123 SOD 123 SOD123


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PDF OD123 OD323 BB404A* BB404B BB404C BB404D BB404E BB814* BB721 BB723 high frequency diode "high frequency Diode"
2009 - 2850KT

Abstract: 2850MT 1200 RTV 2850FT RTV-615 1N6515 1N5550 scotchcast epoxy potting material diode with piv of 40v
Text: Loss Measurement In high voltage, high frequency diode applications, reverse recovery losses can , a result of the high voltage bias, as applied while the diode is recovering from forward bias to a , losses include the diode recovery time, operating frequency , dv/dt of the voltage waveform, and , thermal impedance. In high voltage applications, the minimum distance required between the diode and , APPENDIX B Diode Thermal Analysis Controlling junction temperature is key to reliable


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PDF 1N6515 1N5550 2850KT 2850MT 1200 RTV 2850FT RTV-615 1N6515 1N5550 scotchcast epoxy potting material diode with piv of 40v
vienna rectifier

Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output Cree SiC MOSFET rectifier three phase 40a design and of 1- vienna rectifier
Text: frequency between 380 and 800 Hz. To achieve a minimum harmonic distortion level, this high fundamental , they are subjected to the high frequency switching. To achieve a high power density, the size of the , COOLMOSTM devices. With very low input capacitance they allow high frequency operation in the range of several hundred of kHz with acceptable conduction losses at high output power. Each high frequency , and the diode , with increasing switching frequency . It has to be noted that at the end of the


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PDF F-33700 CH-8092 APEC2007) vienna rectifier Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output Cree SiC MOSFET rectifier three phase 40a design and of 1- vienna rectifier
ge motor capacitor cross reference

Abstract: ml4421 ML4421CS12 transistors BC 457 ML4421-12 3 phase ac sinewave motor controller single ic
Text: it should be (4) The 1k£2 and 330pF filters the high frequency diode recovery spikes , filtered to remove the P W M frequency . The high voltages at the motor terminals are divided down to 1 .6 , . A constant voltage/ frequency ratio can be maintained over a 10:1 frequency range. The output variable frequency AC voltages are sensed and fed back to the controller to track the sine wave frequency , Eliminates run capacitor for PSC motors Drives IR 2118 high side drivers (ML4421 -12) 12V ±10% operation


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PDF ML4421 ge motor capacitor cross reference ML4421CS12 transistors BC 457 ML4421-12 3 phase ac sinewave motor controller single ic
Not Available

Abstract: No abstract text available
Text: 1k ii and 330pF filters the high frequency diode recovery spikes occurring in the output. Cos - One , . The signals at these pins should be filtered to remove the PW M frequency . The high voltages at the , . ■Drives single and two phase AC motors A constant voltage/ frequency ratio can be maintained over a 10:1 frequency range. The output variable frequency AC voltages are sensed and fed back to the controller to track the sine wave frequency and amplitude set by the speed control. On two phase motors


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PDF ML4421 ML4421
2003 - SOD87 footprint diode 1n4148

Abstract: triac diac applications circuit diagram AC ENERGY SAVING CIRCUIT DIAGRAM ac motor speed control circuit diagram with IGBT solar inverters circuit diagram car ignition circuit diagram DIMMER BT136 600 BYX119G circuit diagram of high power smps CAR IGNITION WITH SCR
Text: 400 V / 1600 W isolation stage used in a solar energy inverter, the high frequency diode bridge , Control IC & MOSFET in flyback converters · High frequency diode-bridge for a 400 V / 1600 W isolation , BTA225 range · Diodes - Any low frequency diode from Philips' General Purpose Rectifier range , . Important for the efficiency of the PFC is the choice of the MOSFET and the PFC diode . Usually a high switching frequency is chosen to enable the use of small sized inductor. For high power applications the


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2013 - S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 sf20a300 SF10A300 SF5A400 transistor AE code PNP smd SF10D300
Text: [IF(AV) Pre-Amp with ALC Ultrafast Recovery Rectifier High Frequency Diode , Active High Band Switching Diode (PIN Diode ) Antenna Switching & Attenuator Diode (PIN Diode , OUT 1 IN GND S52ED00-AD 3 GND (NPN TR) CCTR Zener Diode + + + + , Single Single SOT26 Item( Diode ) SOT89 SDS511 SDS19D SDS20D SDS21D SDS142WX SDS19WX , Power Solution LED Lighting Power LED Power SBD(FRD) + Bridge Diode LED1 L FRD -


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PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 sf20a300 SF10A300 SF5A400 transistor AE code PNP smd SF10D300
2008 - BUT11ApX equivalent

Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 power management selection guide BT136 testing BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
Text: -100A BUK9875-100A BUK98180-100A BUK96180-100A BUK95180-100A BUK9520-55A BUK7222-55A Ultra High , features High Performance Automotive (HPA) TrenchMOS Automotive MOSFETs types in bold red , -100B Power Management selection guide 2008 19 High voltage bipolar transistors for lighting, self oscillating power supplies and industrial applications Very high voltage bipolar transistors for CRT deflection and high voltage scanning applications Power Bipolar Transistors types in bold red represent


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diode m7 MIC MAKE

Abstract: mic diode M7 smd diode 1336 philips capacitor part numbering system MBH210 MIC M7 KBR-3.58MSA smd diode 542 1336
Text: regulator diode (Vref) with an internal resistance equal to that of R9. In the audio frequency range the , its frequency is within the limits of the frequency interval as set by the diode option RFS. It is , and when RESET is HIGH . The MOH/DMO pin ( diode GOS = on) is used to reduce the voltage swing over the , generated by output TONE. Pin MOH/DMO is HIGH ( diode GOS = off) during this state. This signal can be used , LOW. In mute state a music-on-hold melody is generated by output TONE. Pin MOH/DMO is HIGH ( diode GOS


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PDF TEA1069H TEA1069AH. BZX79C TEA1069A. diode m7 MIC MAKE mic diode M7 smd diode 1336 philips capacitor part numbering system MBH210 MIC M7 KBR-3.58MSA smd diode 542 1336
MBH201

Abstract: philips capacitor part numbering system smd diode UJ 64 A ic dmo 255 MBH210 TEA1081 TEA1093 TEA1069N SDIP42 Music Generator IC
Text: €¢ Ringer melody selection/volume control via keyboard • Diode option: ringer frequency selection , (trd). Chip Enable/ Frequency Discriminator Input: pin CE/FDI This active HIGH input is used to , the limits of the frequency interval as set by the diode option RFS. It is assumed that the ringer , below power-on reset trip level and when RESET is HIGH . The MOH/DMO pin ( diode GOS = on) is used to , TONE. Pin MOH/DMO is HIGH ( diode GOS = off) during this state. This signal can be used to adjust the


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PDF TEA1069N D102fiDb MBH201 philips capacitor part numbering system smd diode UJ 64 A ic dmo 255 MBH210 TEA1081 TEA1093 TEA1069N SDIP42 Music Generator IC
IC03b

Abstract: dmo 265 msa504 TEA1093 TEA1069N TEA1069H philips capacitor part numbering system TEA1069A TEA1069 SDIP42
Text: €¢ Diode option: ringer frequency selection. GENERAL DESCRIPTION The TEA1069 and TEA1069A contain all the , as set by the diode option RFS. It is assumed that the ringer frequency at pin CE/FDI is the double , HIGH . The MOH/DMO pin ( diode GOS = on) is used to reduce the voltage swing over the a/b terminals , generated with a frequency of 606 Hz and a duration of 30 ms. This function is selected by the diode GOS = , melody is generated by output TONE. Pin MOH/DMO is HIGH ( diode GOS = off) during this state. This signal


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PDF TEA1069; TEA1069A IC03b dmo 265 msa504 TEA1093 TEA1069N TEA1069H philips capacitor part numbering system TEA1069 SDIP42
1n414b

Abstract: dmo 365 r EE2318 MRC D17 Diode KD 521 a TEA1083 TEA1093 circuit diagram 1209 mic SDIP42 QFP44
Text: €¢ Diode option: ringer frequency selection. GENERAL DESCRIPTION The TEA1069 contains all the functions , as set by the diode option RFS. It is assumed that the ringer frequency at pin CE/FDI is the double , and when RESET is HIGH . The MOH/DMO pin ( diode GOS = on) is used to reduce the voltage swing over the , generated by output TONE. Pin MOH/DMO is HIGH ( diode GOS = off) during this state. This signal can be used , state a music-on-hold melody is generated by output TONE. Pin MOH/DMO is HIGH ( diode GOS = off) during


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PDF TEA1069 1n414b dmo 365 r EE2318 MRC D17 Diode KD 521 a TEA1083 TEA1093 circuit diagram 1209 mic SDIP42 QFP44
Applications Handbook for Wired telecom systems, IC03b

Abstract: No abstract text available
Text: the diode option RFS. It is assumed that the ringer frequency at pin CE/FDI is the double of the , /FL is LOW when VDD is below power-on reset trip level and when RESET is HIGH . The MOH/DMO pin ( diode , access pause time hold/mute select ringer frequency select make/break ratio on means option diode , diode GOS = off. KT/EARTH is LOW when VDD is below power-on reset trip level and when RESET is HIGH . V , melody is generated by output TONE. Pin MOH/DMO is HIGH ( diode GOS = off) during this state. This signal


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2013 - sharp laser diodes

Abstract: OC100G
Text: . 46 - 47 48 - 49 50 - 51 HIGH TEMP DIODE - AXIAL LEADED 100ns 10mA, 16000V , . 58 - 59 HIGH VOLTAGE OPTO DIODE - AXIAL LEADED 3000ns 300mA - 500mA, 10000V - 15000V , LEAD DIODES 2 AXIAL LEADED - DIODES 3 HIGH TEMP DIODE - AXIAL LEADED 4 EPOXY MOLDED DIODES - AXIAL LEADED 5 HIGH VOLTAGE OPTO DIODE - AXIAL LEADED 6 OPTOCOUPLERS 7 , ) . 116 - 120 APPLICATION NOTE B ( DIODE THERMAL ANALYSIS


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PDF 420mA, 250mA, 150mA 500mA, 750mA 2000mA, 800mA 1500mA 3500mA, sharp laser diodes OC100G
TCA700Y equivalent

Abstract: SAJ300R SAF1092 BC413 BC327-25 ITT INTERMETALL itt zener diode zpd tca700y by133 zy200 itt
Text: market in 1983, the system has been continuously refined and per­ fected and has reached a high level , SA TELLITE BC MICROPHONE TAPE DISC COMPUTER STEREO ■PSEUDD STERED EXTENTED STEREO HIGH , as well as the gradual extension to high quality TV. The highest level of integration contains , technique) Tuning Processor (with on-screen display and frequency synthesis) (with voltage synthesis , are automatically recog­ nized through the software and processed accordingly. Here, the high


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PDF DIGIT2000 237th YU-61000 TCA700Y equivalent SAJ300R SAF1092 BC413 BC327-25 ITT INTERMETALL itt zener diode zpd tca700y by133 zy200 itt
transistor dk qq

Abstract: transistor DK qj LA1875 4e diodo 8377 om transistor dk 50 T5 DIODO diodo s4 bul 510 equivalen LC7232
Text: SD HIGH when it detects a station. DIR When the TAPE HMD diode is not connected, this input , if the POWER SW diode is connected and the key is ON. POWER If, in VF ON mode, SKIN is HIGH for , an auto-search, and is LOW otherwise. SCANCONT goes HIGH during the diode matrix scan following , and Western Europe. Table 4. Frequency band selection CD SELECT When the diode is connected, the CD functions are enabled. If CDW is taken LOW, CDOUT goes HIGH . When the diode is not connected, the CD


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PDF LC7232-8377 LC7232-8377 12-hour LA1875M transistor dk qq transistor DK qj LA1875 4e diodo 8377 om transistor dk 50 T5 DIODO diodo s4 bul 510 equivalen LC7232
2006 - FERRET TRANSFORMER

Abstract: Avago Technologies Schottky 5082-2824 "Point Contact Diodes" radar detector detector
Text: system if the diode 's flicker noise corner frequency fN is high , i.e., >50 kHz. To obtain maximum , important factors are: a) RF Frequency b) Video Bandwidth c) Diode DC Bias Current d) Test Mount , ., Vo = Pin of the diode . It is bias, load resistance, signal level, and RF frequency dependent, and , flicker noise corner frequency , Hz fL = Video circuit low frequency 3 dB point, Hz Rs = Diode series , that there is a value of bias current, for a given diode and operating frequency , which results in


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