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Part Manufacturer Description Datasheet Download Buy Part
JAN2N3055 Microsemi Corporation Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
UNRF2A100A Panasonic Electronic Components TRANS NPN W/RES 35 HFE ML3-N2

hfe 2n3055 Datasheets Context Search

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2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Region Safe Operating Area http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC , Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - 20 5.0 70 - Collector­Emitter , Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) fT 2.5 - MHz hfe 15 120 - *Small­Signal Current Gain


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc â , 0 Package 2N3055 20 TO−204AA (Pb−Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î Î Î Î à , Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE â


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PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: Area http://onsemi.com 36 2N3055 , MJ2955 500 300 200 hFE , DC CURRENT GAIN 25°C 100 70 50 30 , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO


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PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , switching and amplifier applications. *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - Collector­Emitter , MHz *Small­Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
2004 - 2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Text: 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055 , MJ2955 , 2N3055 , MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: · Power dissipation - PD = 115W at TC = 25°C. · DC current gain hFE = 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 31/05/05 V1.0 2N3055 , MJ2955 Complementary Power Transistors Thermal Characteristics


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PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 , general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device · DC Current Gain - hFE = 20­70 @ IC = 4 Adc · Collector­Emitter Saturation Voltage - · Excellent , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , ) hFE - 20 5.0 70 - Collector­Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise


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PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
2005 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2n3055 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Text: Area http://onsemi.com 2 2N3055 (NPN), MJ2955(PNP) 500 300 hFE , DC CURRENT GAIN 200 100 70 50 , 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20-70 @ IC , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package


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PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
2005 - 2n3055

Abstract: 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 MJ2955 300 watts amplifier
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Features http://onsemi.com · DC Current Gain - hFE = 20-70 @ IC = 4 Adc · Collector-Emitter , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - Collector-Emitter


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PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 300 watts amplifier
1995 - 2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , switching and amplifier applications. *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - Collector­Emitter , MHz *Small­Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Rev. 4 1 Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC


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PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
2001 - pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , ) * hFE * Continental Device India Limited TEST CONDITION IC=200mA, IB=0 IC=200mA, RBE=100 VCE , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , =1.0 s,Nonrepetitive MIN 2.87 fT hfe IC=0.5A, VCE=10V, f=1MHz IC=1A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit rca 40327 40636 rca 300W TRANSISTOR AUDIO AMPLIFIER 220v 300w ac regulator circuit 40636 2N3055 RCA 40327
Text: 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe = 25-100 @> 450 mA f-p = 1.5 MHz typ. 40349 VCEV(susl - 160 V hFE = 30-125 ® 150 mA lT = 1.5 MHz typ. 2N5786 VCERlsus) ■45 V hFE ■20-100 @ 1.6 A ty - 1 MHz min. 40250 VCEVlsusl « 50 V hFE - 25-100 » 1.5 A fT - 1.2 MHz tvp. Pt-29W 2N5295 2NS296 VCER(sus> - 50 V hFE ■30-120 ® 1 A fj = 0.8 , -50W 2N5493 2N5492 VCER(susl -65V hfE ■20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE ■20-70


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PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit rca 40327 40636 rca 300W TRANSISTOR AUDIO AMPLIFIER 220v 300w ac regulator circuit 40636 2N3055 RCA 40327
pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package 2N3055 MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3055 NPN , ) * hFE * Continental Device India Limited TEST CONDITION IC=200mA, IB=0 IC=200mA, RBE=100 VCE , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , =1.0 s,Nonrepetitive MIN 2.87 fT hfe IC=0.5A, VCE=10V, f=1MHz IC=1A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse


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PDF ISO/TS16949 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
1995 - Not Available

Abstract: No abstract text available
Text: MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 V hFE , RATINGS • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emitter Saturation , . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055 /D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data , derated for temperature according to Figure 1. 20 2N3055 , MJ2955


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PDF 2N3055/D* 2N3055/D
2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
Text: Registration. ( 2N3055 ) (1) Pulse Test: Pulse W idth < 300 ns, Duty Cycle < 2.0%. fT 2.5 - MHz hfe 15 120 - fhfe 10 - kHz 2N3055 , MJ2955 There are two limitations on the power , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055 /D Com plem entary , 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , ) (I q = 10 Ade, Iß = 3.3 Ade) B ase-E m itter On Voltage (I q = 4.0 Ade, V CE = 4.0 Vdc) hFE 20 5.0 v


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PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
RCA 40313

Abstract: RCA 528 RCA 40349 2n3773 rca 40349 2N1482 transistor BDY29 2N3441 RCA RCA 2n6262 BUX 115
Text: 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe = 25-100 @> 450 mA f-p = 1.5 MHz typ. 40349 VCEV(susl - 160 V hFE = 30-125 ® 150 mA lT = 1.5 MHz typ. 2N5786 VCERlsus) ■45 V hFE ■20-100 @ 1.6 A ty - 1 MHz min. 40250 VCEVlsusl « 50 V hFE - 25-100 » 1.5 A fT - 1.2 MHz tvp. Pt-29W 2N5295 2NS296 VCER(sus> - 50 V hFE ■30-120 ® 1 A fj = 0.8 , -50W 2N5493 2N5492 VCER(susl -65V hfE ■20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE ■20-70


OCR Scan
PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40313 RCA 528 RCA 40349 2n3773 rca 40349 2N1482 transistor BDY29 2N3441 RCA RCA 2n6262 BUX 115
2N5296 RCA

Abstract: RCA 40373 amplifier ocl 2n3055 2N3055 RCA 40347 40328 RCA 40250 2N5415 2N3054 2N344
Text: 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe = 25-100 @> 450 mA f-p = 1.5 MHz typ. 40349 VCEV(susl - 160 V hFE = 30-125 ® 150 mA lT = 1.5 MHz typ. 2N5786 VCERlsus) ■45 V hFE ■20-100 @ 1.6 A ty - 1 MHz min. 40250 VCEVlsusl « 50 V hFE - 25-100 » 1.5 A fT - 1.2 MHz tvp. Pt-29W 2N5295 2NS296 VCER(sus> - 50 V hFE ■30-120 ® 1 A fj = 0.8 , -50W 2N5493 2N5492 VCER(susl -65V hfE ■20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE ■20-70


OCR Scan
PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2N5296 RCA RCA 40373 amplifier ocl 2n3055 2N3055 RCA 40347 40328 RCA 40250 2N5415 2N3054 2N344
2015 - 2N3055L-T30-Y

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3055 NPN SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTION The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power , www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R205-003.B 2N3055  NPN , Current ON CHARACTERISTICS IEBO DC Current Gain(note) hFE Collector-Emitter Saturation , fT IC=0.5A, VCE=10V, f=1MHz Small-Signal Current Gain hFE IC=1A, VCE=4V, f=1kHz Small-Signal


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PDF 2N3055 2N3055 2N3055L-T30-Y QW-R205-003 2N3055L-T30-Y
Not Available

Abstract: No abstract text available
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , ) * hFE * Continental Device India Limited TEST CONDITION IC=200mA, IB=0 IC=200mA, RBE=100Ω VCE , 20 5 5.0 0.7 5.0 1.1 3.0 1.5 70 UNITS V V mA mA mA V V Page 1 of 4 2N3055 , =1.0 s,Nonrepetitive MIN 2.87 fT hfe IC=0.5A, VCE=10V, f=1MHz IC=1A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E
2001 - Not Available

Abstract: No abstract text available
Text: Certified Manufacturer 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can , Emitter on Voltage DC Current Gain VBE(on) * hFE * Continental Device India Limited TEST , UNITS V V mA mA mA V V Page 1 of 4 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER , Frequency SYMBOL IS/b TEST CONDITION VCE=40V,t=1.0 s,Nonrepetitive MIN 2.87 fT hfe IC=0.5A, VCE=10V, f=1MHz IC=1A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E
rca 2n3055

Abstract: rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note RCA 40636 transistor 2N3439 RCA 2N3055 40327 rca transistor RCA 528 2n3055 application note
Text: [N-P-N] 2N6213 [P-N-P] 2N6079 [N-P-N] 2N5840 [N-P-N] 2N6175 "Plástic 2N 3440" VCER(susl - 300 V hFE - 30-190 @ 20 mA fT ■20 MHz min 2N3440 VCERlsusl- 300 V hFE ■40-160 @ 20 mA fT 15 MHz mm 2N5415 VCEOlsusl " -200 V hFE ■30-150 @ -50 mA fT = 15 MHz min BUX67 VCER(sus) = 175V hpE " 10 -150 @ 1 A fT- 15MHz 2N3583 VCERlsusl = 250 V hFE = 40 min. @ 100 mA hFE 10 min. @ 1 A tT = 15 MHz min. BUX66 VCERlsus) = -175V hFE "10-150 @-l A fy = 15MHz 2N6211 VCERlsusl * -250 V hFE " 10-100 @ -1 A fT =


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PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 rca 2n3055 rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note RCA 40636 transistor 2N3439 RCA 2N3055 40327 rca transistor RCA 528 2n3055 application note
2008 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Text: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , . operating junction temperature For PNP type voltage and current values are negative 2N3055 MJ2955 2


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PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
rca 40250

Abstract: RCA 40250 transistor RCA transistor 40312 40310 rca RCA 40310 40372 RCA rca 40372 Transistor rca 40372 RCA 40316 40250 RCA
Text: 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe = 25-100 @> 450 mA f-p = 1.5 MHz typ. 40349 VCEV(susl - 160 V hFE = 30-125 ® 150 mA lT = 1.5 MHz typ. 2N5786 VCERlsus) ■45 V hFE ■20-100 @ 1.6 A ty - 1 MHz min. 40250 VCEVlsusl « 50 V hFE - 25-100 » 1.5 A fT - 1.2 MHz tvp. Pt-29W 2N5295 2NS296 VCER(sus> - 50 V hFE ■30-120 ® 1 A fj = 0.8 , -50W 2N5493 2N5492 VCER(susl -65V hfE ■20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE ■20-70


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PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 rca 40250 RCA 40250 transistor RCA transistor 40312 40310 rca RCA 40310 40372 RCA rca 40372 Transistor rca 40372 RCA 40316 40250 RCA
RCA 40411 transistor

Abstract: rca 40411 2N5295 RCA 2N6259 RCA 2n3773 rca 2n3055 application note 40411 transistor audio amplifier with rca 40411 transistor BDY29 NPN Transistor 2N3055 darlington
Text: 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe = 25-100 @> 450 mA f-p = 1.5 MHz typ. 40349 VCEV(susl - 160 V hFE = 30-125 ® 150 mA lT = 1.5 MHz typ. 2N5786 VCERlsus) ■45 V hFE ■20-100 @ 1.6 A ty - 1 MHz min. 40250 VCEVlsusl « 50 V hFE - 25-100 » 1.5 A fT - 1.2 MHz tvp. Pt-29W 2N5295 2NS296 VCER(sus> - 50 V hFE ■30-120 ® 1 A fj = 0.8 , -50W 2N5493 2N5492 VCER(susl -65V hfE ■20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE ■20-70


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PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40411 transistor rca 40411 2N5295 RCA 2N6259 RCA 2n3773 rca 2n3055 application note 40411 transistor audio amplifier with rca 40411 transistor BDY29 NPN Transistor 2N3055 darlington
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