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1997 - IRF470

Abstract: IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC
Text: charge HEXFETs. The devices are switching 4A inductive load at 200V. paring the relative merits of the , Characteristics and Requirements for Power HEXFETs" current and the adverse effects of circuit parasitics so , Index Design Tips DT 94-7A Low Gate Charge HEXFETs Simplify Gate Drive and Lower Cost , results in 2.5 times faster switching compared to the standard device. Use of Low Charge HEXFETs Helps Save on Gate Drive Driving large-die standard HEXFETs like the IRF740 in half-bridge applications


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PDF AN-944A: AN-937B: IRF470 IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC
Not Available

Abstract: No abstract text available
Text: VOLTAGE-HEXFETor IGBT DIE SIZE CPY203E L PACKAGE CONTENTS A: B: C: D: E: F: G: H: I: J: K: M: P: Q: S: HEXFETs Only HEXFETs & Blocking Diodes HEXFETs & Gate Zener Diodes HEXSenseonly HEXSense & Free-Wheeling Diodes (P-Channel Devices Only) HEXFETs & Free-Wheeling Diodes (P-Channel Devices Only) HEXSense & Gate Zener Diodes All N-Channel HEXFETs with Freewheeling Diodes IGBTs & FREDS Driver & IGBTS & FREDS HEXFETs & Kelvin Connections IGBT s only HEXFETs & Kelvin Connections & Gate Zener Diodes Complimentary Pair N & P HEXFETs IGBT


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PDF CPY203E
IR2110 h bridge application notes

Abstract: IRFT003 cpy203e igbt h bridge application CPY302F IR2110 H bridge driver circuit CPY400H for IR IGBT die 16 pins rely ic all number h bridge ir2110
Text: or IGBT DIE SIZE -L- PACKAGE CONTENTS A: HEXFETs Only B: HEXFETs & Blocking Diodes C: HEXFETs & Gate Zener Diodes D: HEXSenseonly E: HEXSense & Free-Wheeling Diodes (P-Channel Devices Only) F: HEXFETs & Free-Wheeling Diodes (P-Channel Devices Only) G: HEXSense & Gate Zener Diodes H: All N-Channel HEXFETs with Freewheeling Diodes I: IGBTS& FREDS J: Driver & IGBTS & FREDS K: HEXFETs & Kelvin Connections M: IGBT's only P: HEXFETs & Kelvin Connections & Gate Zener Diodes 0


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PDF
1998 - SCR gate drive circuit

Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 GBAN-PVI-1 SCR Gate Drive for ac to dc converter
Text: HEXFETs Beware of Unexpected Gate-to-Source Voltage Spikes Beware of Drain or Collector Voltage Spikes , Standard HEXFET? Driving HEXFETs From Linear Circuits Drive Circuits not Referenced to Ground Gate , Gate Drivers INT-940 How P-channel HEXFETs Can Simplify Your Circuit (Comprised of: AN-940) Why , /27/98 www.irf.com Paralleling HEXFETs IR ProCenter Fax-On-Demand (310) 252-7100 941 6 , Compare Different Devices INT-948 Linear Power Amplifier Using Complimentary HEXFETs (Comprised of


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PDF INT-936 May-97 Jun-97 AN-936) Jun-96 SCR gate drive circuit DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 GBAN-PVI-1 SCR Gate Drive for ac to dc converter
TTL 7400

Abstract: driver IC for IRF540 MOSFET IRLZ524 IRLZ544 TTL7400 IRLZ514 IRL544 DM7400N irf540 TTL 7400 logic gate ic
Text: . Table 1 summarizes the essential comparisons between standard and logic level HEXFETs. On-Resistance , standard HEXFETs. The important considerations for driving logic level HEXFETs are discussed and typical , HEXFETs are new designs using a thinner gate oxide than standard HEXFETs. This has the following effects , standard HEXFETs. Since the logic level HEXFET needs only one half the gate voltage, the drive energy is , employed. International Rectifier logic level HEXFETs are specifically designed for operation from 5V logic


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PDF DM74S00N DM74LS00N DM74AS00N 74AA00PC AN-971 74ACT00PC MM74HC00N MM74HCT00N DS0026CN TTL 7400 driver IC for IRF540 MOSFET IRLZ524 IRLZ544 TTL7400 IRLZ514 IRL544 DM7400N irf540 TTL 7400 logic gate ic
CPX234

Abstract: hexfets international rectifier Part Numbering System cpy203e Powerline a5028 CPX234A CPY301F
Text: HEXFETs = Standard HEXFETs only. = HEXFETs + Blocking Diodes = HEXFETs + Gate-to-Source Zener Diode Protection. = HEXSense where applicable. = HEXSense + Freewheeling Diodes on the P-Channel HEXFETs. = HEXFETs + Freewheeling Diodes on the P-Channel HEXFETs. = HEXSense HEXFETs + Gate-to-Source Zener Diode


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PDF
1999 - DT94-15

Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 GBAN-PVI-1 AN-948 DT-93-4 HEXFETs FETs
Text: the Reverse Blocking Characteristics of the Device Be Careful When Handling and Testing Power HEXFETs , Drive Circuit is Seldom a Problem Can a C-MOS Gate Drive a Standard HEXFET? Driving HEXFETs From Linear , Drivers Driving in the MHz? Use Resonant Gate Drivers INT-940 How P-channel HEXFETs Can Simplify Your , www.irf.com Paralleling HEXFETs (Comprised of: AN-941) General Guidelines Steady State Sharing Dynamic , Using Complimentary HEXFETs (Comprised of: AN-948) A Description of the Circuit Performance Power Supply


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PDF INT-936 AN-936) INT-937 Jun-96 Oct-98 DT94-15 ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 GBAN-PVI-1 AN-948 DT-93-4 HEXFETs FETs
IRF470

Abstract: LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent gate drive circuit for power MOSFET IRF740 power MOSFET IRF740 driver circuit
Text: KANSAS ST • ELSEGUNDO, CA 90245-TEL (310)322-3331 • FAX (310)322-3332 LOW GATE CHARGE HEXFETS , for excessive ringing and oscillation in the circuit. New Low Charge HEXFETs give the designer a , device (notice that scales are different). 3. Use of Low Charge HEXFETs helps save on gate drive , HEXFETs as shown in Figure 7, the IR2110 can be replaced by the low cost, lower output current capability , sinking capability of the IR2112 are lower than 40% of the IR2110. 4. New Designs with Low Charge HEXFETs


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PDF 90245-TEL AN-944A: AN-937B: IRF470 LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent gate drive circuit for power MOSFET IRF740 power MOSFET IRF740 driver circuit
T0-251

Abstract: T0251AA hexfets
Text: '1 THONSON/ DISTRIBUTOR International SS Rectifier Expanded Product Line Logic-Level International Rectifier has expanded its line of Logic-Level HEXFETs to include the popular HEXDIP (4-pin plastìc , . Logic-level HEXFETs feature the same basic characteristics as their well-established standard-gate , Power MOSFETs Logic Level N-Channel HEXFETs a full 10V from gate to source to turn on, logic-level HEXFETs require only SV to achieve full enhancement. This allows direct interface between power loads and


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PDF O-220AB T0-251AA irlu110 irlu120 O-220 irlz14 irlz24 irlz34 irlz44 T0-251 T0251AA hexfets
1996 - IRHM9160

Abstract: No abstract text available
Text: HARD HEXFET Product Summary International Rectifier's P-channel RAD HARD technology HEXFETs , Rectifier's P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si , RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD , Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are , P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International


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PDF IRHM9160 IRHM9160
1996 - IRH9230

Abstract: Rad Hard in MOSFET
Text: RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage , conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications , International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the , Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs , (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be


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PDF IRH9230 IRH9230 Rad Hard in MOSFET
IRC540 equivalent

Abstract: IRFC9034 irfc9024 IRFC9220 IRLC140 IRLC120 IRFC9230 IRF9540 equivalent IRL530 equivalent IRF9640 equivalent
Text: ) Outline Figure Equivalent Device mm type P-Channel HEXFETs 1 1 1 2 2 IRFC9014 IRFC9110 , current data sheet. VGS(th) Standard HEXFETs min 2V, max 4V with Vds = Vg s , ID = 250 nA Recommended wire size for Gate, Kelvin and Current Sense connections: Logic level HEXFETs min 1V, max 2V with Vds = VGS. !D = 250 |oA VGS(th) 3 to 5 mils (0.076 to 0.127 mm) Measured with VGS = 10V on standard HEXFETs and 5V on logic level HEXFETs RDS(on) (1) For case outline drawing see page 0-2. GEN I design F-20


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PDF IRFC9014 IRFC9110 IRFC9210* IRFC9024 IRFC9120 IRFC9220* IRFC9034 IRFC9130 IRFC9230 IRFC9044 IRC540 equivalent IRFC9220 IRLC140 IRLC120 IRF9540 equivalent IRL530 equivalent IRF9640 equivalent
1996 - JANSR2N7389

Abstract: IRHF9130
Text: 's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown , post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical , International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the , Device Radiation Characteristics Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance


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PDF IRHF9130 JANSR2N7389 MIL-PRF-19500/630] JANSR2N7389 IRHF9130
3 phase inverter 120 conduction mode waveform

Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
Text: . The diode recovery current therefore constitutes a loss of energy which appears as heat in the HEXFETs. , . Losses associated with areas 4 and 5 are distributed between the two HEXFETs. The total losses are , rating is used and no snubber is required with HEXFETs. Expensive design effort is thereby reduced when a product range is designed around HEXFETs. For operation from a rectified 120V ac supply the 250 Volt , applications. HEXFET America's high volume in-line manufacturing facility now makes HEXFETs decidedly


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PDF AN-967A 3 phase inverter 120 conduction mode waveform inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
1996 - IRHM9230

Abstract: sec1012
Text: 's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown , post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical , Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel , Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs , P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International


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PDF IRHM9230 IRHM9230 sec1012
IRL0120

Abstract: dm 136 hexfets T0-251
Text: bteniatìonal ^Rectifier Expanded Product Line HEXFETp o w .m o s f e t , L o g ic LeVei N-Channel Logic-Level HEXFETs International Rectifier has expanded its line of Logic-Level HEXFETs to include the popular HEXDIP (4-pin plastic Dual-In-line) and surfacemountable D-Pak packages, as well as the original, ever-popular TO-220AB outline. Logic-level HEXFETs feature the same basic , gate to source to turn on, logic-level HEXFETs require only 5V to achieve full enhancement. This allows


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PDF O-220AB T0-251AA O-220 IRLZ14 IRLZ24 IRLZ34 IRLZ44 IRL510 IRL520 IRL530 IRL0120 dm 136 hexfets T0-251
Not Available

Abstract: No abstract text available
Text: P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown , post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical , of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE , Radiation Characteristics Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program


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PDF IRH9230
Not Available

Abstract: No abstract text available
Text: 's P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown , radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain Identical electrical , Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel , -750, method 1019. © H-69 IRH9130 Device Radiation Performance of P-Channel RAD HARD HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness


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PDF IRH9130 1x105 MIL-STD-750,
Not Available

Abstract: No abstract text available
Text: technol­ ogy HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability , conditions, International Rectifier's PChannei RAD HARD HEXFETs retain identical electrical specifications , International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE fail­ ure. Since , HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness , rate up to 1x1 O’2 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are


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PDF IRHF9230
100-C

Abstract: IRHE9130 h112 hexfets 1x105
Text: HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total , , International Rectifier's P-Channel RAD HARD HEXFETs retain Identical electrical specifications up to 1x105 Rads , RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD , P-Channel RAD HARD HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their , hardened P-Channel HEXFETs are considered to be Neutron tolerant as stated in MIL-S-19500 Group D


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PDF 1x105 1x1012 MIL-STD-750, H-114 100-C IRHE9130 h112 hexfets
1996 - IRHN9130

Abstract: No abstract text available
Text: HARD HEXFET Product Summary International Rectifier's P-channel RAD HARD technology HEXFETs , Rectifier's P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si , RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD , Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their , (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be


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PDF IRHN9130 IRHN9130
1996 - P-Channel HEXFET Power MOSFET

Abstract: hexfets transistor 1012 TO-3 package IRH9230 Rad Hard in MOSFET TO3 package RthJC
Text: HEXFET International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent , RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No , microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has , Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness , hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D


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PDF IRH9230 P-Channel HEXFET Power MOSFET hexfets transistor 1012 TO-3 package IRH9230 Rad Hard in MOSFET TO3 package RthJC
Not Available

Abstract: No abstract text available
Text: 's P-Channel RAO HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown , radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain Identical electrical , Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel , Characteristics Radiation Performance of P-Channel RAD HARD HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International


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PDF IRHF913Q 1x10s 1x105 1x1012 oper-140 MIL-STD-750,
IRH250

Abstract: TO-254AA Package IRHF130 IRHF230 hexfets IRHM450 IRHM150 IRHG110
Text: -9.479 * Limited by package. N.B. An Export Lfcense from the USA is required for Radiation Hard HEXFETs. 3 All , RADIATION HARD HEXFETs international rectifier INTERNATIONAL RECTIFIER 2bE D ■4055452 00105^8 1 ■- RADIATION HARD HEXFETS N-CHANNEL Types VDS V Rdsion) [max) n 1q cont TC - 25°C A 'dm puised A po max W Bulletin Case Style SURFACE MOUN1 ■DEVICE — SMD-1 SMD"1 3.81 - 3.31 IRHN1S0 IRHN25Q IRHN450 100 200 500 0.065 0.110 0.450 25.0 18.5 8.0 100 80 50 75 75 75 - SURFACE MOUN1 DEVIC E â


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PDF IRHN25Q IRHN450 IRHE120 IRHE130 MO-Q36B M0036AB IRHG110 T0-205AF IRHF130 IRHF230 IRH250 TO-254AA Package hexfets IRHM450 IRHM150
1996 - IRHN9150

Abstract: No abstract text available
Text: HARD HEXFET Product Summary International Rectifier's P-channel RAD HARD technology HEXFETs , Rectifier's P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si , RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD , Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to , P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International


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PDF IRHN9150 IRHN9150
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