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IRFG43

Abstract: motor driver IRF640
Text: IRFS40 IRFG41 IRF642 IRFG43 N-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-220AB Plastic Package Product Summary Part Number bvdss R DS(on) IRF640 200V 0 .1 8 0 18A IRF641 150V , -2 5 3 !d IRF640 , 1RF641, IRF642, IRF643 Devices HE D | 4flSS4S5 OOaaSQS Q I , Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance © Type Min. IRF640 IRF642 IRF641 IRF643 IRF640 IRF641 200 Typ. Max. V Q VGS - 10V, l0 >10A A -


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PDF IRFS40 IRFG41 IRF642 IRFG43 T0-220AB IRF640 IRF641 IRF643 C-259 IRFG43 motor driver IRF640
2008 - irf640

Abstract: hexfet irf640 IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , apply Document Number: 91036 S-81241-Rev. A, 07-Jul-08 www.vishay.com 1 IRF640 , SiHF640 Vishay , -81241-Rev. A, 07-Jul-08 IRF640 , SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise , . Temperature Document Number: 91036 S-81241-Rev. A, 07-Jul-08 www.vishay.com 3 IRF640 , SiHF640


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PDF IRF640, SiHF640 O-220 12-Mar-07 irf640 hexfet irf640 IRF640 circuit
2007 - for IR hexfet die

Abstract: No abstract text available
Text: PD- 91873 IRFC240 HEXFET ® Power MOSFET Die in Wafer Form D G S 200 V Size 4.0 Rds(on)=0.18 5" Wafer Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate , Conditions Reference Standard IR packaged part ( for design ) : IRF640 Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° ) 99% Al , . International Rectifier®, IR®, the IR logo, HEXFET ®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are


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PDF IRFC240 12-Mar-07 for IR hexfet die
2008 - IRF640 SILICONIX

Abstract: No abstract text available
Text: , dI/dt 150 A/µs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. Uses IRF640 /SiHF640 data and test , IRF640 /SiHF640 data and test conditions. www.vishay.com 2 Document Number: 91037 S-81241-Rev. A, 07 , damages resulting from such improper use or sale. International Rectifier®, IR®, the IR logo, HEXFET


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PDF IRF640S, IRF640L, SiHF640S SiHF640L O-262) O-263) 12-Mar-07 IRF640 SILICONIX
IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching Application of irf250 IRF244 IRF250 TO-247 irf460 to247 irf234 n
Text: HEXFET Power MOSFETs FullPak N-Channel Products From IR FullPak Fully-isolated HEXFETs , IS0-T0-3P SIMILAR to T0-247AC _ / if // V 282 Products From IR HEXFET Power MOSFETs , Style TO-220AB 100 283 HEXFET Power MOSFETs HEXSense Cu rent Sensing N -Channel Number , 0.80 lg Max. Continuous Drain Currant (Amps) 1.7 2.5 1.0 1.3 0.50 0.60 0.80 HEXFET Power MOSFETs , T0-251AA ^ . . . J 2 85 HEXFET Power MOSFETs Plastic Insertable Package TO


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PDF T0-240AA IRF460 in TO220 IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching Application of irf250 IRF244 IRF250 TO-247 irf460 to247 irf234 n
1998 - IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Text: 4.1.1 HIGH TEMPERATURE REVERSE BIAS (HTRB) HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction , IRF640 9748 150 85 1000 0 1.0E+07 0.089 89 IRF610 9646 150 110 1000 0 1.3E+07 0.069 69 , 0 0 0 0 0 0 0 0 0 0 Fail Mode (note a) 4.1.5 HIGH TEMPERATURE GATE STRESS HEXFET , IRF4905 9734 85 96 0 IRF540 9750 85 96 0 IRF640 9737 20 96 0 IRF640 9748 20 96 0 , 0 0 0 0 0 4 Fail Mode (note a) 4.1.7 HIGH TEMPERATURE REVERSE BIAS (HTRB) HEXFET


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PDF O-220/D2PAK IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34 IRCZ34 IRCZ44 IRC540 IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
1994 - IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application HTGB IRD110
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY 1.0 INTRODUCTION 2.0 USING HEXFET RELIABILITY INFORMATION 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX , ACTIVITY 8.1 PARETO CHARTS OF FAILURE MECHANISMS 8.2 THE HEXFET AMERICA CORRECTIVE ACTION PROGRAM , covering the previous twenty four months of component testing at International Rectifier's HEXFET ® America , between generation 3 and generation 5 HEXFET devices. A total of 12,940 devices have accumulated the


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PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application HTGB IRD110
MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC IRF540 smd 2n6845 jantx D 10.7 A e2958 2N6806 2N7237 JANTXV irfm9230
Text: n s 4.4.9, A ll C o n d itio n s 4.4.11 293 Government/ Space Products HEXFET , Mil-Qualified T039/ HEXFET /N-Channel P a rt N u m b e rs JE D E C JA N T X JA N T X V H e x le t C r o s t R e fe re , -20SAF TO-39 IO R » T039/ HEXFET /P-Channel 2N6845 2N6847 2N6849 2N6851 JANTX2N6845 JANTX2N6847 , 19500-1093-86 19500-1093-86 T03/ HEXFET /N-Channel 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 , 19500-490-81 19500-490-81 19500-960-82 19500-960-82 TO-204AA TO-3 T03/ HEXFET /P-Channel 2N6804 2N6806


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PDF MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC IRF540 smd 2n6845 jantx D 10.7 A e2958 2N6806 2N7237 JANTXV irfm9230
2007 - AN-994

Abstract: IRF640 IRF640L IRF640S linear applications of power MOSFET IRF640
Text: PD -90902B IRF640S/L HEXFET ® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18 G ID = 18A S , 50V, starting TJ = 25°C, L = 2.7mH Uses IRF640 data and test conditions RG = 25, IAS = 18A , , HEXFET ®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International


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PDF -90902B IRF640S/L IRF640S) IRF640L) 12-Mar-07 AN-994 IRF640 IRF640L IRF640S linear applications of power MOSFET IRF640
3 phase inverter 120 conduction mode waveform

Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
Text: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems ( HEXFET is a registered , operated within their capabilities. The introduction of International Rectifiers HEXFET ID generation , applications. HEXFET America's high volume in-line manufacturing facility now makes HEXFETs decidedly cost-competitive. And HEXFET m incorporates several major design improvements. Its body diode is far more nigged , snubbers. The HEXFET in diode rating allows the designer to exploit the presence of the integral diode with


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PDF AN-967A 3 phase inverter 120 conduction mode waveform inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
Text: IOR IGBT, HEXFET , HEXSense international rect.fier an{j ^ dje - INTERNATIONAL RECTIFIER StE D ■MASS1^ QD102t.b ? ■T'39~90- IGBTs, HEXFET , HEXSENSE and LOGIC LEVEL HEXFET DIE -J^qJ^OS' , , request a copy of our Controlling Specification E2931 from your Local Sales Office. HEXFET GENERATION III The evolution of the HEXFET has given rise to three HEXFET types, each based on a distinct die design philosophy. The HEXFET III process, detailed in Application Note AN-964, is distinguished by increased and


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PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
1997 - power MOSFET IRF640

Abstract: "thermal via" PCB D2PAK hexfet irf640 linear applications of power MOSFET IRF640 marking F53 IRF640S AN-994 IRF640 IRF640L
Text: PD - 9.902A IRF640S/L PRELIMINARY HEXFET ® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18 G ID = 18A S Description Third generation HEXFETs from international Rectifier provide , RG = 25, I AS = 18A. (See Figure 11) Uses IRF640 data and test conditions ISD 18A, di/dt


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PDF IRF640S/L IRF640S) IRF640L) power MOSFET IRF640 "thermal via" PCB D2PAK hexfet irf640 linear applications of power MOSFET IRF640 marking F53 IRF640S AN-994 IRF640 IRF640L
1994 - IRFIBC44LC

Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Text: 95219 TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR , 6-1 7.0 FAILURE ANALYSIS AND CUSTOMER RETURNS 7-1 8.0 THE HEXFET AMERICA CORRECTIVE ACTION , HEXFET devices is 0.05% resulting from 2 failures. HIGH HUMIDITY, HIGH TEMPERATURE REVERSE BIAS , HEXFET Quarterly Reliability Report contains the accumulated data obtained on power MOSFET transistors


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1999 - irf640s

Abstract: IRF640 IRF640L AN-994 ST IRF640
Text: PD -90902B IRF640S/L HEXFET ® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18 G ID = 18A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best , , starting TJ = 25°C, L = 2.7mH Uses IRF640 data and test conditions RG = 25, IAS = 18A. (See Figure


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PDF -90902B IRF640S/L IRF640S) IRF640L) irf640s IRF640 IRF640L AN-994 ST IRF640
2003 - AN-994

Abstract: IRF640 IRF640L IRF640S sec irf640
Text: PD -90902B IRF640S/L HEXFET ® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18 G ID = 18A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best , Uses IRF640 data and test conditions RG = 25, IAS = 18A. (See Figure 12) ISD 18A, di/dt 150A


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PDF -90902B IRF640S/L IRF640S) IRF640L) AN-994 IRF640 IRF640L IRF640S sec irf640
RF640

Abstract: No abstract text available
Text: International 3X3R Rectifier · · · · · · · p r e l im in a r y P D -9 S 0 2 # IR F 6 4 0 S /L HEXFET ® Power MOSFET V dss = 200V ^DS(on) Surface Mount (I RF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated = 0.180 lD= 18A D escription Third generation HEXFETs from , , © Pulse width <300ns; duty cycle < 2%. © Uses IRF640 dataand test conditions T j < 150°C * When


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PDF RF640S) IRF640L) IRF640S) RF640
1999 - IRFZ44G

Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor IRFP140N transistor 9721
Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared , TO220 Fullpak. However, reference to the quarterly reliability report published by our Hexfet America , % of the components may fail in five years. Therefore, the HexFet reliability or operating-life data is , of 60 Using Hexfet Reliability Information Reliability is the probability that a semiconductor , to the device. In order to understand the reliability of specific product like the HexFet it is


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PDF IRFIZ34N IRFIZ44N IRFIZ48N IRFI1010N IRFI520N IRFI530N IRFI1310N IRLI3705N IRLIZ24N IRLIZ44N IRFZ44G IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor IRFP140N transistor 9721
IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 D515 transistor transistor D357 equivalent 1RF511 IRF710 and its alternatives electronics digest gi 9424 diode
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 , pictorial content without express permission in writing is prohibited. HEXFET is the trademark for , Rectifier introduced the HEXFET , a new series of power MOSFETs that was to open up vast, new opportunities , limited by the per­ formance characteristics of bipolar transistors. The HEXFET , so named because of a , HEXFET power MOSFETs in the 25-watt and above range than all other power MOSFET manufacturers in the


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PDF
transistor equivalent irf510

Abstract: HEXFET III - A new Generation of Power MOSFETs irf460a transistor equivalent irf740 966a transistor equivalent irf520 fet irf840 AN949A High frequency switching IRF83Q AN-966A
Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs (H EXFET is a tra d e m a , introduc ed a new third-generation of HEXFET power MOSFETs, the HEXFET III. The HEXFET III range , the performance and value of the HEXFET III range. The electrical characteristics of HEXFET III devices are equal or superior to their HEXFET I and HEXFET II pre decessors and therefore they are able to , identified by a new method of package marking. (See section, " HEXFET III part numbers" ). The HEXFET III


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IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: -220 500V Single N-Channel HEXFET Power MOSFET in a 15 MTP package 15 500V 19.000A MTP 15 500V 19.000A


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PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
mosfet power totem pole CIRCUIT

Abstract: IR 948 AN-940 mosfet HEXFET Power MOSFET P-Channel IR P-Channel mosfet hexfet power mosfets international rectifier IR power mosfet switching power supply P-Channel HEXFET Power MOSFET HEXFET Power MOSFET HEXFET Characteristics
Text: 1. Basic Characteristics of P-Channel HEXFET Power MOSFETs. 1 2. Grounded Loads , P-Channel HEXFET power MOSFETs offer the designer a new option that can simplify circuitry while optimizing , low power applications. AN- 940 (v.Int) How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit ( HEXFET Power MOSFET is a trademark of International Rectifier's Power MOSFETs) Topics covered , P-Channel HEXFET Power MOSFETs offer the designer a new option that can simplify circuitry while optimizing


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PDF AN-940 mosfet power totem pole CIRCUIT IR 948 AN-940 mosfet HEXFET Power MOSFET P-Channel IR P-Channel mosfet hexfet power mosfets international rectifier IR power mosfet switching power supply P-Channel HEXFET Power MOSFET HEXFET Power MOSFET HEXFET Characteristics
1999 - Not Available

Abstract: No abstract text available
Text: Qualification Report 98/010/1 for Super247 HEXFET Product Manufactured at IRGB February 1999 Issue 1. Super247 Hexfet Qualification Report Report prepared by:- Kate Withers IRGB Page 1 of , Results 4. Environmental Test Conditions / Schematics Super247 Hexfet Qualification Report Page 2 , carried out in IRGB on the Super247 Hexfet 500v product, Die size 7.3, shows that IRGB is capable to , Reliability Engineering Quality Manager Date Super247 Hexfet Qualification Report Page 3 of 19


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PDF Super247
HEXFET Power MOSFET designer manual

Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details ic cd4093 CI 7407 CD4093 IR2121 equivalent
Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs , . 2 4. Driving Standard HEXFET MOSFETs from TTL. 5 5. Driving Standard HEXFET MOSFETs from CMOS. 5 6. Driving HEXFET Power , . 7 8. Drive Requirements and Switching Characteristics of Logic Level HEXFET MOSFETs , AN-937 (v.Int) Gate Drive Characteristics and Requirements for HEXFET ®s Topics covered: Gate


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PDF AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details ic cd4093 CI 7407 CD4093 IR2121 equivalent
1999 - Not Available

Abstract: No abstract text available
Text: 1999 Issue 1. Super220 Hexfet Qualification Report Report prepared by:- Kate Withers IRGB Page , Test Results 4. Environmental Test Conditions / Schematics Super220 Hexfet Qualification Report , from the environmental testing carried out in IRGB on the Super220 Hexfet 40v Logic Level product , Green Oxted Surrey RH8 9BB Reliability Engineering Quality Manager Date Super220 Hexfet Qualification Report Page 3 of 19 Section 2 Environmental Test Results Summary Super220 Hexfet


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PDF QTP98/013/1 Super220
1994 - AN-944A

Abstract: AN934B AN944A IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET IRF430 i-pak Package zener diode MOSFET reliability report format AN949A High frequency switching AN-934B
Text: 's HEXFET ® America facility in Temecula, California. The products tested include HEXFETs packaged in TO , is now separated between generation 3 and generation 5 HEXFET devices. A total of 11,720 devices , TO-220/D2Pak and I-Pak/D-Pak is now separated between generation 3 and generation 5 HEXFET devices , The power cycling failure rate of HEXFET devices is 0.11% resulting from 3 failures. TEMPERATURE , mount (D2Pak and D-Pak) and through hole (TO-220 and I-Pak) HEXFET devices. A total of 7,073 devices


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PDF O-220, O-247 O-220 O-220/D2Pak AN-944A AN934B AN944A IRF440 what is THERMAL RUNAWAY IN RECTIFIER MOSFET IRF430 i-pak Package zener diode MOSFET reliability report format AN949A High frequency switching AN-934B
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