The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
4116R-1-751 Bourns Inc Array/Network Resistor, Isolated, Metal Glaze/thick Film, 2.25W, 750ohm, 100V, 2% +/-Tol, 100ppm/Cel, Through Hole Mount, 8631, DIP
4116R-1-751LF Bourns Inc Array/Network Resistor, Isolated, Metal Glaze/thick Film, 2.25W, 750ohm, 100V, 2% +/-Tol, 100ppm/Cel, Through Hole Mount, 8631, DIP, ROHS COMPLIANT
100R17-51B Johnson Electric / Parlex Corporation CABLE FLAT FLEX 17POS 1MM 2,1
OSTVR175150 On-Shore Technology Inc Barrier Strip Terminal Block, 10A, 1 Row(s), 1 Deck(s),
VR17515200J0G Amphenol FCi Barrier Strip Terminal Block
VR17515000J0G Amphenol FCi Barrier Strip Terminal Block

hep R1751 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
hep 154 silicon diode

Abstract: zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a , then compared to HEP specifications and the HEP device that best met or exceeded the important , because some of the Motorola HEP devices are capable of higher performance than the original, Motorola , every instance and/or application. Motorola HEP devices fall into two fields of interest , carefully selected and added to the HEP line to simplify the replacement of many manufacturers’ special


OCR Scan
PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
triac zd 607

Abstract: 2sb504 hep c6004 2SC 968 NPN Transistor sje 607 motorola c6004 ssf 6014 Motorola Semiconductor hep c3806p af118 2SB337
Text: & SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a , then compared to HEP specifications and the HEP device that best met or exceeded the important , because some of the Motorola HEP devices are capable of higher performance than the original, Motorola , instance and/or application. Motorola HEP takes great pride in offering the most complete line of semiconductor devices appealing to the hobbyist-experimenter and replacement markets. All of the HEP devices


OCR Scan
PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 2sb504 hep c6004 2SC 968 NPN Transistor sje 607 motorola c6004 ssf 6014 Motorola Semiconductor hep c3806p af118 2SB337
he10

Abstract: No abstract text available
Text: Designation HDC KIT HE-P 06.10 M Designation HDC HE 6 FP HDC HE 6 MP HDC 06B ALU HDC 06B TSLU 1M20G , Designation HDC KIT HE-P 06.11 M Component Socket Pin Bulkhead (Feed-Through) Plug Cable glands , Designation HDC KIT HE-P 06.10 Designation HDC HE 6 FP HDC HE 6 MP HDC 06B ALU HDC 06B TSLU 1PG16G VG , KIT HE-P 06.11 Component Socket Pin Bulkhead (Feed-Through) Plug Cable glands Order No , Designation HDC KIT HE-P 10.110 M E Component Socket Pin Bulkhead (Feed-Through) Plug Cable glands


Original
PDF 1PG29G 29-MS68 1PG21G 21-MS68 he10
hep 50

Abstract: HEP801 HEP 801 hep-802 HEP802 HEP transistors HEP 802 HEP300 hep-801 HEP 3
Text: by 20%) Symbols HEP 801 HEP 802 HEP 803 HEP 804 HEP 805 HEP 806 Units , Half Sine Wave JEDEC Method 120 HE 90 60 P8 06 HEP 30 0 1 2 5 80 1 - HEP 805 10 20 50 100 200 REVERSE VOLTAGE . ( V) 500 40 60 80 100 120 140


Original
PDF HEP801 HEP806 ITO-220A 13Min ITO-220A MIL-STD-750, 50ohmsf hep 50 HEP 801 hep-802 HEP802 HEP transistors HEP 802 HEP300 hep-801 HEP 3
hep 50

Abstract: No abstract text available
Text: capacitive load, derate by 20%) Symbols HEP 1601 HEP 1602 HEP 1603 HEP 1604 HEP 1605 HEP 1606 Units Maximum recurrent peak reverse voltage VRRM 50 100 200 300 400


Original
PDF HEP1601 HEP1606 ITO-220A 13Min ITO-220A MIL-STD-750, 50ohmsf hep 50
sparc v8

Abstract: microsparc microsparc I SPARC T4
Text: 31 microSPARC - Hep SPARC vS 32-Bit Microprocessor With PCI/DRAM Interfaces S ig n a l D e s c , S un M ic r o e l e c t r o n ic s July 1997 microSPARC - Hep SPARC v8 32 , Read-Modify-Write Cycle (100 M H z Clock) July 1997 microSPARC - Hep SPARC v8 32-Bit Microprocessor With PCI , MHz Clock) J u ly l9 9 7 microSPARC - Hep SPARC v8 32-Bit Microprocessor With PCI/DRAM Interfaces , (100 M H z Clock) July 1997 S un M ic r o e l e c t r o n ic s 43 microSPARC - Hep SPARC


OCR Scan
PDF 32-bit 32-entry 16-entry sparc v8 microsparc microsparc I SPARC T4
Not Available

Abstract: No abstract text available
Text: for fitting a bend relief. HEP Fixed socket,' nut fixing, w atertight. orvacuum , etres. 146 HGP and HEP socket allow the device on which they are fit­ ted to reach a protection , HEP 13.9 HGP 13.9 PSA 13.9 Note: m ounting nut torque: 6 Nm (1N = 0.102 kg) PCB


OCR Scan
PDF
PT3527

Abstract: t82c5 line code manchester CRS22 ST 9248 transistor Manchester code XR-T82C516CJ be325 9248 System Clock Chip XR-T82515CP
Text: ~23~] HGND HEP 1 22] HOEC COIN (T ~21~j GND CODEC [jT 20 1 CD IC VREC jjT 19 j COLL 18 1 CDTH , HEP 7 CDIN 8 CDDEC 9 FSI 10 VREC 11 BAO 12 RD 13 LEVEL 14 LINE DRIVER (TRANSMITTER) WAVE , , via HEP , the d irection in which to change the gain adjust output. Figure 3. Adaptive Hybrid Block , adjust. If the signals are in phase, the phase comparator output HEP high, the gain adjust signal is too large causing an "unbalanced" condition. On the other hand, if the signals are out of phase, HEP low


OCR Scan
PDF XR-T82515/T82C516 XR-T82515 XR-T82C516 PT3527 t82c5 line code manchester CRS22 ST 9248 transistor Manchester code XR-T82C516CJ be325 9248 System Clock Chip XR-T82515CP
DMILL

Abstract: nuclear radiation detector Higgs 3 microprocessor radiation hard Neutron Radiation Detector Bipolar Junction Transistor npn LHC HEP transistors 10MRAD
Text: 2 ad m Mr ons/c 10 utr 14 ne 10 DMILL mixed analog/digital Radiation Hard BiCMOS An emerging need in HEP The decision to develop new equipment for High Energy Physics ( HEP ) research has lead to the need for ultra hard technology. The detector electronics adjacent to proton collision areas can accumulate radiation doses above 10 Mrad. Furthermore, the low level of the detector signals , Nuclear, Space, Astrophysics,. Although the technology was primarily developed to answer emerging HEP


Original
PDF
Not Available

Abstract: No abstract text available
Text: microSPARC™ - Hep SPARC v8 32-Bit M icroprocessor W ith PCI/D RA M Interfaces Figure 1. microSPARC-llep , icroelectronics 31 microSPARC™ - Hep SPARC v8 32-Bit M icroprocessor W ith PCI/D RA M Interfaces P r e , S un M icroelectronics 33 microSPARC™ - Hep SPARC v8 32-Bit M icroprocessor W ith PCI/D , microSPARC™ - Hep SPARC v8 32-Bit M icroprocessor W ith PCI/D RA M Interfaces T im in g C o n s id e r a , 1997 S un M icroelectronics 37 P r e lim in a r y microSPARC™ - Hep SPARC v8 32-Bit M


OCR Scan
PDF STP1100BG 32-Bit 32-entry STP1100BGA 1100B
2001 - HEP transistors

Abstract: SPRU511 TMS320C55x CSL USB usb 3 datasheet usb control chip C5502 TMS320C5000 C55X IER0
Text: object Function USB_Boolean USB_initEndptObj (USB_DevNum DevNum, USB_EpHandle hEp , USB_EpNum , . Currently, the only active device number available is USB0. hEp Handle or a pointer to an initialized , data transfer in progress Function USB_Boolean USB_abortTransaction(USB_EpHandle hEp ); Category Software Control Arguments hEp Return Value USB_TRUE if transfer has been


Original
PDF TMS320C55x SPRU511 HEP transistors SPRU511 TMS320C55x CSL USB usb 3 datasheet usb control chip C5502 TMS320C5000 C55X IER0
1996 - DMILL

Abstract: RAD HARD TRENCH TRANSISTOR HEP transistors BPSG jfet n channel ultra low noise temic jfet nuclear 1E14 hep silicon diode Neutron Radiation Detector
Text: 10MRAD(Si) DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics ( HEP ) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision areas can be above 10 Mrad. Furthermore, the low level of the detector signals imposes very high signal to noise ratios. To meet these new requirements, the French Commissariat à l'Energie Atomique


Original
PDF 10MRAD D-85386 I-20157 DMILL RAD HARD TRENCH TRANSISTOR HEP transistors BPSG jfet n channel ultra low noise temic jfet nuclear 1E14 hep silicon diode Neutron Radiation Detector
2002 - OPA02

Abstract: OPA03 128 x 1 multiplexer hep silicon diode BGP02 DMILL calorimeter sensor CIRCUIT SUN SENSOR digital SUN SENSOR cmos detector space radiation BGP01
Text: equipment for High Energy Physics ( HEP ) research has lead to the need of ultra hard technology. The , HEP experiments makes the radiation requirements extremely high. Some of the circuits will suffer , various ionizing particles because of HEP bombarding cocktails. Of particular interest, X and Gamma rays , breakdown is roughly 70% HEP , 15% nuclear and 15% misc. Examples of DMILL Designs 1. Advanced


Original
PDF 4169B OPA02 OPA03 128 x 1 multiplexer hep silicon diode BGP02 DMILL calorimeter sensor CIRCUIT SUN SENSOR digital SUN SENSOR cmos detector space radiation BGP01
Not Available

Abstract: No abstract text available
Text: C " min. ^ ~T?00 pour bar/in. eft D L £1 MM. SY/7X. -I J-J2 ¿46 -L 7 SSZ.24C : 2._/Ad ¿12 Z46 -f l&A. h5¿5 tS,S tS+sSL sJLJl. yji vr.r sS^S. M/ ¿US- .£ IcJnc. Cod* Couf ■fâ. U/ZrB Zj^tS_ /SOL. DESCRIPTION OBSERVATION HEP . AMP INCORPORATED ALL RIGHTS RESERVED. AMP PRODUCTS COVERED BV PATENTS AND/OR PATENTS PENDING DESSIN CLIENT UNIQUEMENT POUR REFERENCES DESSINE & 1 FIE APPROUVE /Rc^oiSeJ_ a. MODIFICATIONS DES DATE MATIERE ET FINITION £OtV#£ £T*)M£ /VYLOf^ 9ov6£ DIWENS


OCR Scan
PDF
Not Available

Abstract: No abstract text available
Text: 60 = 60 Position 102 KELTRON CONNECTOR CO. ■TGOSlbM 0000103 HEP ■FEATURE OPTION P


OCR Scan
PDF STD-202 DDD10M
Not Available

Abstract: No abstract text available
Text: HEP series 125℃ Super Low ESR・High Reliability ■ Specifications Items Rated voltage               (V) Surge voltage               (V) Category temperature range (℃) Capacitance tolerance     (%) Leakage current(LC) ( µA MAX/after 2min) Tangent of loss angle(DF) (MAX) Test Endrance 125℃ rated voltage applied (Applied ripple current) 16 20 25 32 120Hz/20℃ 16V 25V≦ △ C/C tanÎ


Original
PDF 120Hz/20â 500hrs. 000hrs
Not Available

Abstract: No abstract text available
Text: . m HER 125 Operating Tem perature Range T j Storage Tem perature Range HEP 16.0 a


OCR Scan
PDF 1601G 1608G O-220 MILSTD-202, HER1608G) 50Vdc 003554b
2001 - OPA03

Abstract: DMILL SUN SENSOR 65260 npn nv SRAM cross reference hep silicon diode Bias "One Year Repeatability" SMALL ELECTRONICS PROJECTS digital SUN SENSOR cmos detector digital SUN SENSOR cmos detector space radiation
Text: equipment for High Energy Physics ( HEP ) research has lead to the need of ultra hard technology. The , HEP experiments makes the radiation requirements extremely high. Some of the circuits will suffer , various ionizing particles because of HEP bombarding cocktails. Of particular interest, X and Gamma rays , application breakdown is roughly 70% HEP , 15% nuclear and 15% misc. Examples of DMILL designs 1


Original
PDF
1N458

Abstract: 1N626 BA170 1N459a BAV18 BAV17 1N627 1N462A 1N251 hep silicon diode
Text: fife ted he/ie. CadH youft safies hep jo/t mo/te (njo/imation. Refer to back cover for package


OCR Scan
PDF U711M D0B0302 DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N458 1N459a 1N627 hep silicon diode
lead free

Abstract: No abstract text available
Text: Acrylamide 31 Trich loroethylene 32 Boric acid 33 Disodium tetraborate 34 Tetrab oro n disodium hep taox ide


Original
PDF 2002/95/EC 2006/122/EC" J-STD-020C lead free
7865B

Abstract: No abstract text available
Text: Capacitance4 Vggp OUT Output Voltage V hep OUT Error @ 25°C V hep OUT Error Tmin to Tmax V hep OUT Temperature


OCR Scan
PDF 14-Bit AD7865 7865B
2002 - transistor 2 SC 4242

Abstract: sc-2227 80284 SC2256 P450 sc-2395 sc-2256 nuclear
Text: : Hep G2 WCL, sc-2227: mouse liver extract, sc-2256; rat liver extract, sc-2395. RESEARCH USE For


Original
PDF H-205) sc-8986 transistor 2 SC 4242 sc-2227 80284 SC2256 P450 sc-2395 sc-2256 nuclear
Not Available

Abstract: No abstract text available
Text: HEP series 125℃ Super Low ESR・High Reliability ■ Specifications Items Rated voltage               (V) Surge voltage               (V) Category temperature range (℃) Capacitance tolerance     (%) Leakage current(LC) ( µA MAX/after 2min) Tangent of loss angle(DF) (MAX) Test Endrance 125℃ rated voltage applied (Applied ripple current) 16 20 25 32 120Hz/20℃ 16V 25V≦ △ C/C tanÎ


Original
PDF 120Hz/20â 500hrs. 000hrs.
lead free

Abstract: No abstract text available
Text: Tetrabo ron diso diu m hep taox ide 35 Sodium chro mate 36 Potassiu m ch romate 37 Ammo nium dichro mate


Original
PDF 2002/95/EC 2006/122/EC" J-STD-020C lead free
j3y transistor

Abstract: marking R33 .j3y transistor transistor J3Y .j3y J3Y Transistor MARKING 2SC4176 HIGH SPEED SWITCHING NPN N/j3y transistor
Text: Storage Time tstg 6.0 13 ns Turn-off Time toff 12 18 ns * Pulsed: PW ^ 350 jus. Duty Cycle ä 2 hep


OCR Scan
PDF 2SC4176 2SC4176 1987M j3y transistor marking R33 .j3y transistor transistor J3Y .j3y J3Y Transistor MARKING HIGH SPEED SWITCHING NPN N/j3y transistor
Supplyframe Tracking Pixel