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2000 - 4N38

Abstract: H11D1 H11D2 H11D3 H11D4 H11DX
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The , Voltage - H11D1 , H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V · High isolation voltage - 5300 , VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 , H11D2, H11D3, H11D4, 4N38 ABSOLUTE MAXIMUM RATINGS (Cont , °C PD Derate linearly above 25°C H11D1 - H11D2 *Collector to Emitter Voltage 300 H11D3 - H11D4 200 VCER 4N38 *Collector Base Voltage 80 H11D1 - H11D2 300 H11D3 - H11D4


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PDF H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 4N38 H11D1 H11D2 H11D3 H11D4
2007 - H11DX

Abstract: H11D1 H11D2
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The , Voltage - H11D1 , H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 , 1.41 mW/°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 , H11D2, H11D3 , mW/°C DETECTOR *Power Dissipation @ TA = 25°C PD Derate linearly above 25°C H11D1 - , Voltage 80 H11D1 - H11D2 300 H11D3 - H11D4 VCBO 4N38 *Emitter to Collector Voltage V


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PDF H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 H11D1 H11D2
siemens d 2101

Abstract: RB1M
Text: C [E ITlB ase 1 T ~ 1Collector H11D1 /H11D2/H11D3 · CTR at lp*10 mA, BVC ER=10 V: ¿20% * Good , Voltage - H11D1 /H11D2, BVcer=300 V -H11D3, BVcer=200V · Isolation Tast Voltage: 5300 VACrms * Low , Relays D E S C R IP T IO N The H11D1 /2/3 are optocou piers with very high BVC Er. They are intended , °C Collector-Emitter Voltage H11D1 /2 .300 V H11D3 .200 V Collector-Base Voltage H11D1 /2 .300V H11D3


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PDF H11D1/H11D2/H11D3 H11D1/H11D2, -H11D3, cH11D1/2/3 siemens d 2101 RB1M
2007 - MOC8204M

Abstract: all datasheet phototransistor 4N38M OPTOCOUPLERs MARKING CODE H11D1 H11D1M H11D2M H11D3M
Text: Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.5 www.fairchildsemi.com 4N38M, H11D1 M , Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.5 www.fairchildsemi.com 2 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M - High Voltage Phototransistor Optocouplers Absolute , 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.5 www.fairchildsemi.com 3 4N38M, H11D1 M , Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.5 www.fairchildsemi.com 4


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PDF 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M H11DXM MOC8204M MOC8204M, all datasheet phototransistor 4N38M OPTOCOUPLERs MARKING CODE H11D1 H11D1M H11D2M H11D3M
2007 - H11D1M

Abstract: MOC8204M 4N38M H11D1 H11D2M H11D3M
Text: Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 4N38M, H11D1 M , Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 2 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M - High Voltage Phototransistor Optocouplers Absolute , 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 3 4N38M, H11D1 M , Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 4


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PDF 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M H11DXM MOC8204M MOC8204M, H11D1M 4N38M H11D1 H11D2M H11D3M
2000 - H11DX

Abstract: H11D1 4N38 H11D2 H11D3 H11D4
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The , Voltage - H11D1 , H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V · High isolation voltage - 5300 , VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 , H11D2, H11D3, H11D4, 4N38 ABSOLUTE MAXIMUM RATINGS (Cont , °C PD Derate linearly above 25°C H11D1 - H11D2 *Collector to Emitter Voltage 300 H11D3 - H11D4 200 VCER 4N38 *Collector Base Voltage 80 H11D1 - H11D2 300 H11D3 - H11D4


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PDF H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 H11D1 4N38 H11D2 H11D3 H11D4
2004 - H11D1

Abstract: H11D1-X007 H11D2 H11D3 H11D4
Text: H11D1 / H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base , Voltage - H11D1 /H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V Isolation Test Voltage: 5300 VRMS , 2 5 C NC 3 4 E e3 i179004 The H11D1 / H11D2/ H11D3/ H11D4 are optocouplers with , a high blocking voltage. The H11D1 / H11D2 are identical and the H11D3/ H11D4 are identical. Order Information Part Remarks H11D1 CTR > 20 %, DIP-6 H11D2 CTR > 20 %, DIP-6 H11D3


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PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1 H11D1-X007 H11D2 H11D3 H11D4
VDE0303

Abstract: No abstract text available
Text: Infineon H11D1 /H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS® High BVcer Voltage Optocoupler , Degradation Very High Collector-Emitter Breakdown Voltage - H11D1 /H11D2, BVCer =300 V - H11D3/H11D4, BVc e r , telecommunications applications or any DC application requiring a high blocking voltage. The H11D1 /D2 are identical , mW Detector Collector-Emitter Voltage H11D1 /2 , . 200 V Collector-Base Voltage H11D1 /2


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PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 5mA10J 1-888-lnfineon 11D1/2/3/4 VDE0303
TIL112

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Text: 5.0 5.0 1.5 10 0.4 0.5 10 5-29 H11D1 5.0 5.0 1.5 10 0.4 0.5 10 5-29 H11D2 5.0 5.0 1.5 10 0.4 0.5 , Optically-Coupled Isolator Optoelectronic Products H11D1 , H11D2 H11D3, H11D4 General Description The H11D1 , H11D1 , H11D2 H11D3, H11D4 V(-;b Collector-to-Base Voltage H11D1.H11D2 H11D3, H11D4 V[:;c , ) ) K NC Emitter Collector Base Output npn Phototransistor 5-30 Typical Electrical H11D1 , H11D2 , Collector-to-Emitter Breakdown Voltage lc = 1.0 mA, H11D1 , H11D2 300 350 V Pulsed H11D3, H11D4 200 250 V If -


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PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 H11D1, H11D2, TIL112 MCA255
2007 - h11dx

Abstract: No abstract text available
Text: a standard plastic six-pin dual-in-line package. H11D1 H11D2 H11D3 H11D4 4N38 FEATURES · High Voltage - H11D1 , H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V · High isolation voltage - 5300 VAC , PHOTOTRANSISTOR OPTOCOUPLERS H11D1 , H11D2, H11D3, H11D4, 4N38 ABSOLUTE MAXIMUM RATINGS (Cont.) Parameter DETECTOR *Power Dissipation @ TA = 25°C Derate linearly above 25°C H11D1 - H11D2 *Collector to Emitter Voltage H11D3 - H11D4 4N38 H11D1 - H11D2 *Collector Base Voltage H11D3 - H11D4 4N38 *Emitter to Collector


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PDF H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700
1995 - MOTOROLA 813 transistor

Abstract: h11d1 motorola transistor 813 motorola QT Optoelectronics H11D1 H11D2
Text: QT Optoelectronics MOTOROLA Order this document by H11D1 /D SEMICONDUCTOR TECHNICAL DATA H11D1 * GlobalOptoisolatorTM H11D2 6-Pin DIP Optoisolators High Voltage Transistor Output (300 Volts) [CTR = 20% Min] *Motorola Preferred Device STYLE 1 PLASTIC The H11D1 and H11D2 consist , are common. H11D1 is rated @ 5656 Volts peak (VISO). H11D2 is rated @ 3535 Volts peak (VISO , H11D1 H11D2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Symbol Min Typ(1


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PDF H11D1/D H11D1 H11D2 H11D1 H11D2 H11D1/D* MOTOROLA 813 transistor h11d1 motorola transistor 813 motorola QT Optoelectronics
2001 - H11D1

Abstract: H11D3 h11d3-d4 H11D12
Text: H11D1 /H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler , Degradation · Very High Collector-Emitter Breakdown Voltage ­ H11D1 /H11D2, BVCER=300 V ­ H11D3/H11D4, BVCER , (mm) 3 DESCRIPTION The H11D1 /2/3/4 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. The H11D1 /D2 are , Voltage H11D1 /2 .


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PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 1-888-Infineon H11D1/2/3/4 H11D1 H11D3 h11d3-d4 H11D12
2007 - 83611

Abstract: NTCR 2.5 IEC60065 VDE0884
Text: H11D1 /H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base , collector emitter breakdown voltage - H11D1 /H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V · Isolation , RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION AGENCY APPROVALS The H11D1 /H11D2/H11D3/H11D4 , DC application requiring a high blocking voltage. The H11D1 /H11D2 are identical and the H11D3/H11D4 , APPLICATIONS · Telecommunications · Replace relays ORDER INFORMATION PART REMARKS H11D1 CTR > 20


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PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, i179004 2002/95/EC 2002/96/EC H11D1/H11D2/H11D3/H11D4 08-Apr-05 83611 NTCR 2.5 IEC60065 VDE0884
2005 - H11D1-X007

Abstract: H11D1 H11D2 H11D3 H11D4
Text: H11D1 / H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base , Voltage - H11D1 /H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V Isolation Test Voltage: 5300 VRMS , 2 5 C NC 3 4 E e3 i179004 The H11D1 / H11D2/ H11D3/ H11D4 are optocouplers with , a high blocking voltage. The H11D1 / H11D2 are identical and the H11D3/ H11D4 are identical. Order Information Part Remarks H11D1 CTR > 20 %, DIP-6 H11D2 CTR > 20 %, DIP-6 H11D3


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PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1-X007 H11D1 H11D2 H11D3 H11D4
2007 - H11DX

Abstract: H11D4.300 H11D12 4N38
Text: a standard plastic six-pin dual-in-line package. H11D1 H11D2 H11D3 H11D4 4N38 FEATURES · High Voltage - H11D1 , H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V · High isolation voltage - 5300 VAC , PHOTOTRANSISTOR OPTOCOUPLERS H11D1 , H11D2, H11D3, H11D4, 4N38 ABSOLUTE MAXIMUM RATINGS (Cont.) Parameter DETECTOR *Power Dissipation @ TA = 25°C Derate linearly above 25°C H11D1 - H11D2 *Collector to Emitter Voltage H11D3 - H11D4 4N38 H11D1 - H11D2 *Collector Base Voltage H11D3 - H11D4 4N38 *Emitter to Collector


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PDF H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700 H11D4.300 H11D12 4N38
2007 - Not Available

Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The , Voltage - H11D1 , H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 , 1.41 mW/°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 , H11D2, H11D3 , mW/°C DETECTOR *Power Dissipation @ TA = 25°C PD Derate linearly above 25°C H11D1 - , Voltage 80 H11D1 - H11D2 300 H11D3 - H11D4 VCBO 4N38 *Emitter to Collector Voltage V


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PDF H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700
2007 - Not Available

Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The , Voltage - H11D1 , H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 , 1.41 mW/°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 , H11D2, H11D3 , mW/°C DETECTOR *Power Dissipation @ TA = 25°C PD Derate linearly above 25°C H11D1 - , Voltage 80 H11D1 - H11D2 300 H11D3 - H11D4 VCBO 4N38 *Emitter to Collector Voltage V


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PDF H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700
2003 - Not Available

Abstract: No abstract text available
Text: VISHAY H11D1 / H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output , H11D1 /H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V Isolation Test Voltage: 5300 VRMS Low Coupling , (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 · BSI IEC60950 IEC60965 · FIMKO The H11D1 / H11D2 are identical and the H11D3/ H11D4 are identical. Order Information Part H11D1 H11D2 H11D3 , The H11D1 / H11D2/ H11D3/ H11D4 are optocouplers with very high BVCER. They are intended for


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PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, i179004 E52744 VDE0884) IEC60950
1996 - H11D3

Abstract: RBE1
Text: H11D1 /H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS® HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES · , Very High Collector-Emitter Breakdown Voltage - H11D1 /H11D2, BVCER=300 V - H11D3, BVCER=200 V · , Replace Relays D E DESCRIPTION The H11D1 /2/3 are optocouplers with very high BVCER. They are , Collector-Emitter Voltage H11D1 /2 , .200 V Collector-Base Voltage H11D1 /2


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PDF H11D1/H11D2/H11D3 H11D1/H11D2, H11D3, E52744 H11D1/2/3 H11D1/2/3 H11D3 RBE1
MOTOROLA 813 transistor

Abstract: h11d1 motorola PD3007
Text: document by H11D1 /D & i SET SEMKO DEMKO NEMKO BABT CSA H 11D 1* H11D2 [CTR =20% Min] "Motorola Preferred Device 6-Pin DIP Optoisolators High Voltage TVansistor Output (300 Volts) The H11D1 , dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. H11D1 , , Inc. REV 1 © M s M 9 n Q R ^ le c t r o n ic s D e v ic e D a t a H11D1 H11D2 ELECTRICAL , ) ) H11D1 .2 H11D1 .2 v (BR)CBO H11D1 .2 V(BR)CER H11D1 .2 v (BR)EBO - - - - - Symbol Min TypC


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PDF H11D1/D H11D2 H11D1 H11D2 MOTOROLA 813 transistor h11d1 motorola PD3007
2008 - H11D1

Abstract: No abstract text available
Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055 H11D1 , H11D2, H11D3, H11D4 Circuit , : Input-to-Output Isolation Voltage, Surge (Peak): ±2500V ( H11D1 :±3500V) Input-to-Output Isolation Voltage, Steady State (Peak): ±1500V ( H11D1 :±2100V) Input Diode Forward DC Current: Reverse DC Voltage: Peak Forward , Input-Output Isolation Voltage, Surge Input-Output Isolation Voltage, Steady-State H11D1 H11D2D4 H11D1 H11D2D4


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PDF H11D1, H11D2, H11D3, H11D4 H11D1-H11D4 65ohm 100ohm 100ohm H11D1 H11D2D4
2009 - H11D2

Abstract: H11D1 vishay 3020 8 pin optocoupler H11D1 H11D3 H11D4
Text: H11D1 , H11D2, H11D3, H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base , collector emitter breakdown voltage - H11D1 /H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V · Isolation , /95/EC and WEEE 2002/96/EC DESCRIPTION AGENCY APPROVALS The H11D1 , H11D2, H11D3, H11D4 are , application requiring a high blocking voltage. The H11D1 , H11D2 are identical and the H11D3, H11D4 are , Replace relays ORDER INFORMATION PART REMARKS H11D1 CTR > 20 %, DIP-6 H11D2 CTR > 20 %


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PDF H11D1, H11D2, H11D3, H11D4 H11D1/H11D2, H11D3/H11D4, i179004 2002/95/EC 2002/96/EC H11D2 H11D1 vishay 3020 8 pin optocoupler H11D1 H11D3 H11D4
2000 - H11D3

Abstract: OPTO H11D1
Text: H11D1 /H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler , Degradation · Very High Collector-Emitter Breakdown Voltage ­ H11D1 /H11D2, BVCER=300 V ­ H11D3/H11D4, BVCER , (mm) 3 DESCRIPTION The H11D1 /2/3/4 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. The H11D1 /D2 are , Voltage H11D1 /2 .


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PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 1-888-Infineon H11D1/2/3/4 H11D3 OPTO H11D1
1995 - H11D1

Abstract: H11D2 MOTOROLA 813 transistor
Text: MOTOROLA Order this document by H11D1 /D SEMICONDUCTOR TECHNICAL DATA H11D1 , ] *Motorola Preferred Device STYLE 1 PLASTIC The H11D1 and H11D2 consist of gallium arsenide infrared , rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. H11D1 is rated @ 5656 , ©MotorolaInc. 1995 Motorola, Optoelectronics Device Data 1 H11D1 H11D2 ELECTRICAL CHARACTERISTICS (TA , noted) Collector­Emitter Dark Current (RBE = 1 M ) (VCE = 200 V, TA = 25°C) (TA = 100°C) H11D1 ,2


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PDF H11D1/D H11D1 H11D2 H11D1 H11D2 H11D1/D* MOTOROLA 813 transistor
H11D1

Abstract: H11D3 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
Text: €” H11D1 ,2 — 300 V — H11D3.4 — 200 V • High Isolation Voltage — V|$o = 7500 Vac pk Min â , OUTPUT TRANSISTOR Collector-Emitter Voltage H11D1 .2 H11D3.4 VCER 300 200 Volts Emitter-Collector Voltage Veco 7 Volts Collector-Base Voltage H11D1 .2 H11D3.4 VCBO 300 200 Volts Collector Current â , ) H11D1 H11D2 H11D3 H11D4 6-PIN DIP OPTOISOLATORS TRANSISTOR OUTPUT 200 AND 300 VOLTS CASE 730A-02 , h11d1 , h11d2, h11d3, h11d4 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit INPUT


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PDF H11D1 H11D3 E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE110b, 30A-02 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
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