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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
GT50JR22 Toshiba America Electronic Components RS Components 605 £2.52 £2.38
GT50JR22 Toshiba America Electronic Components RS Components 73 £3.95 £2.38
GT50JR22(STA1,E,S) Toshiba America Electronic Components Avnet 150 €2.59 €1.89
GT50JR22(STA1,E,S) Toshiba America Electronic Components TME Electronic Components 48 $5.29 $3.78
GT50JR22(STA1,E,S) Toshiba America Electronic Components Chip1Stop 50 $11.60 $9.44

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gt50jr22 datasheet (2)

Part Manufacturer Description Type PDF
GT50JR22 Toshiba Transistors Original PDF
GT50JR22 Toshiba Japanese - Transistors Original PDF

gt50jr22 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
GT50JR22

Abstract:
Text: GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 1. Applications · Dedicated to , Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) 1 2012-10-15 Rev.1.0 GT50JR22 4 , thermal resistance Symbol Rth(j-c) Max 0.65 Unit /W 2 2012-10-15 Rev.1.0 GT50JR22 6. Electrical , care. 3 2012-10-15 Rev.1.0 GT50JR22 8. Characteristics Curves (Note) Fig. 8.1 IC - VCE , Switching Time - IC 4 2012-10-15 Rev.1.0 GT50JR22 Fig. 8.7 Switching Time - RG Fig. 8.8 rth


Original
PDF GT50JR22 GT50JR22 IGBT control circuit
Not Available

Abstract:
Text: GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 1. Applications • Dedicated to , TO-3P(N) 1 2012-10-15 Rev.1.0 GT50JR22 4. Absolute Maximum Ratings (Note) (Ta = 25î , 0.65 /W 2012-10-15 Rev.1.0 GT50JR22 6. Electrical Characteristics 6.1. Static , .1.0 GT50JR22 8. Characteristics Curves (Note) Fig. 8.1 IC - VCE Fig. 8.2 IC - VCE Fig. 8.3 IC - VCE , .1.0 GT50JR22 Fig. 8.7 Switching Time - RG Fig. 8.9 Safe Operating Area (Guaranteed Maximum) Note


Original
PDF GT50JR22
2003 - Not Available

Abstract:
Text: GT50JR22 ディスクリートIGBT シリコンNチャネルIGBT GT50JR22 1. 用途 â , 2012-10-15 Rev.1.0 GT50JR22 4. çµ¶å¯¾æœ€å¤§å®šæ ¼ (注) (特に指定のない限り, Ta = 25) (æ , €Œ/W 2012-10-15 Rev.1.0 GT50JR22 6. 電気的特性 6.1. 静的特性 (特に指定のないé , 2012-10-15 Rev.1.0 GT50JR22 8. 特性図 (注) (注 図 8.1 IC - VCE 図 8.2 IC - VCE 図 8.3 , 2012-10-15 Rev.1.0 GT50JR22 図 8.7 スイッチング時間 - RG 図 8.8 rth(j-c) - tw (最大å


Original
PDF GT50JR22
2014 - Not Available

Abstract:
Text: GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 1. Applications • Dedicated , .2.0 GT50JR22 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) 25î , .2.0 GT50JR22 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25, unless otherwise , discharge and should be handled with care. 3 2014-01-06 Rev.2.0 GT50JR22 8. Characteristics , Fig. 8.5 IC - VGE Fig. 8.6 Switching Time - IC 4 2014-01-06 Rev.2.0 GT50JR22 Fig. 8.7


Original
PDF GT50JR22
fast tlp785

Abstract:
Text: TK39N60X TK62N60X TK62N60X TK100L60W GT50JR22 GT50JR22 SiC Schottky Barrier Up to 300


Original
PDF SCE0024G fast tlp785 gt50jr22 TK10A65D TK8P65W TLP152 TLP293 TOSHIBA BIPOLAR POWER TRANSISTOR TPH1400ANH
5252 F solar

Abstract:
Text: , GT50JR22 * TLP701H, TLP351H, TLP155E TLP701H, TLP351H, TLP155E TLP700H, TLP352 TLP358H


Original
PDF SCE0024F 5252 F solar fast tlp785 tcv7116 TK10A60D TPH1400ANH
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