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Part Manufacturer Description Datasheet Download Buy Part
LT1122CCS8 Linear Technology IC OP-AMP, 900 uV OFFSET-MAX, 13 MHz BAND WIDTH, PDSO8, Operational Amplifier
LT1122DCS8 Linear Technology IC OP-AMP, 900 uV OFFSET-MAX, 13 MHz BAND WIDTH, PDSO8, Operational Amplifier
LT1102MJ Linear Technology IC INSTRUMENTATION AMPLIFIER, 900 uV OFFSET-MAX, 0.22 MHz BAND WIDTH, CDIP8, CERDIP-8, Instrumentation Amplifier
LT1102CJ Linear Technology IC INSTRUMENTATION AMPLIFIER, 900 uV OFFSET-MAX, 0.22 MHz BAND WIDTH, CDIP8, CERDIP-8, Instrumentation Amplifier
LT1498CN8#TRPBF Linear Technology IC DUAL OP-AMP, 900 uV OFFSET-MAX, 9 MHz BAND WIDTH, PDIP8, 0.300 INCH, LEAD FREE, PLASTIC, DIP-8, Operational Amplifier
LT1498CN8#TR Linear Technology IC DUAL OP-AMP, 900 uV OFFSET-MAX, 9 MHz BAND WIDTH, PDIP8, 0.300 INCH, PLASTIC, DIP-8, Operational Amplifier

gsm 900 amplifier Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IH33

Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Text: fechnoiogies Infineon CGY 98 GSM /PCN Dual Band Power Amplifier 1 1.1 Schematic of the CGY 98 PA Application Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1 .2. Each one uses a BFP 420 SIEGET® transistor for , 900 Amplifier Frequency Range Input Impedance Output Impedance Input Power Output Power Harmonics Rx noise Power 925 - 935 MHz 935 - 960 MHz Efficiency GSM 1800 Amplifier Frequency Range Input Impedance


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1999 - J294

Abstract: MRF184 MRF6522-60
Text: (NPO) 3.9 k 1 k Figure 9. GSM 900 Amplifier Schematic 50.00 mm 10 mm 6.20 mm 2.60 mm , Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier ") BIAS TUNING R1 C8 , 900 MHz, LDMOS Two­Stage Amplifier ") VBIAS VDD C4 C9 C6 C8 RF INPUT R1 C2 C1 , for the GSM 925 ­ 960 MHz band. The high gain and broadband performance of these devices makes them ideal for large­signal, common source amplifier applications in 28 volt base station equipment. ·


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PDF MRF6522 MRF6522-60 J294 MRF184 MRF6522-60
2001 - j327

Abstract: MRF6522-60 motorola rf device data book 360B-04 "RF MOSFET" MOTOROLA ELECTROLYTIC CAPACITOR motorola ups schematic MRF184 2001RF
Text: Shown in Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier ") VBIAS VDD , APPLICATION (As Shown in Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier , 900 Amplifier Schematic 50.00 mm 10 mm 6.20 mm 2.60 mm HOLES (FOR M2.5 SCREWS) PCB: GI180 , frequencies up to 1.0 GHz and specified for the GSM 925 ­ 960 MHz band. The high gain and broadband performance of these devices makes them ideal for large­signal, common source amplifier applications in 28


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PDF MRF6522 MRF6522-60 j327 MRF6522-60 motorola rf device data book 360B-04 "RF MOSFET" MOTOROLA ELECTROLYTIC CAPACITOR motorola ups schematic MRF184 2001RF
2001 - sem 2005

Abstract: No abstract text available
Text: pF (AVX ACCUP) 470 pF (NPO) 3.9 kΩ 1 kΩ ARCHIVED 2005 Figure 9. GSM 900 Amplifier , AN1670/D, “60 Watts, GSM 900 MHz, LDMOS Two–Stage Amplifier”) VBIAS VDD C4 C9 C6 C8 RF , APPLICATION (As Shown in Application Note AN1670/D, “60 Watts, GSM 900 MHz, LDMOS Two–Stage Amplifierâ , industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high , amplifier applications in 28 volt base station equipment. • Specified Performance @ 960 MHz, 28 Volts


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PDF MRF6522â MRF6522-60 sem 2005
2001 - j327 transistor

Abstract: gsm 900 amplifier j327 Arlon-GX-0300-55-22 J294 j503 ARLON-GX-0300-55-22 pcb MRF6522-60 MRF184 motorola ups schematic
Text: APPLICATION (As Shown in Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier , ACCUP) C7 C8, C9 R1 R2 2.2 pF (AVX ACCUP) 470 pF (NPO) 3.9 k 1 k Figure 9. GSM 900 , CIRCUIT APPLICATION (As Shown in Application Note AN1670/D, "60 Watts, GSM 900 MHz, LDMOS Two­Stage Amplifier ") BIAS TUNING R1 C8 C4 C2 C5 R2 MRF184 GSM /25 V C7 JJ Bouny 02/98 , industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 ­ 960 MHz band. The high


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PDF MRF6522 MRF6522-60 j327 transistor gsm 900 amplifier j327 Arlon-GX-0300-55-22 J294 j503 ARLON-GX-0300-55-22 pcb MRF6522-60 MRF184 motorola ups schematic
2001 - gsm vco

Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
Text: Note No. 053 1.5 Parameter Supply Voltage Control Voltage Range GSM 900 Amplifier Frequency Range Input , CGY 98 GSM /PCN Dual Band Power Amplifier 1 1.1 Schematic of the CGY 98 PA Application Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and , 35 dBm POUT = 35 dBm RBW = 100 kHz 52 55 58 POUT = 35 dBm GSM 1800 Amplifier


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PDF EHT09097 EHT09123 EHT09124 gsm vco bfr93aw schematic gsm 900 amplifier k 3531 transistor
gsm 900 amplifier

Abstract: GSM vco BFP420 Transistor BFR 98 IC210 K 3264 transistor Dual Band Power Amplifier 1 Schematic of the CGY LQG21N BFR93AW k 3531 transistor
Text: POUT = 35 dBm ­ 75 ­ 81 dBm dBm RBW = 100 kHz GSM 900 Amplifier Frequency Range Input , CGY 98 GSM /PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Note No. 053 Application Board V1.2 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage , 32.5 dBm GSM 1800 Amplifier Frequency Range Input Impedance Output Impedance Input Power Output


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PDF EHT09097 EHT09123 EHT09124 gsm 900 amplifier GSM vco BFP420 Transistor BFR 98 IC210 K 3264 transistor Dual Band Power Amplifier 1 Schematic of the CGY LQG21N BFR93AW k 3531 transistor
2002 - GSM LNA

Abstract: IBM REV 2.8 gsm amplifier schematic schematic GSM ESD IBM REV 2.8 Circuit sheet IBM Microelectronics igc1 gsm amplifier circuit
Text: IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features · , /support/howtobuy.html Part Number Product IBM43RCLNA1115 SiGe 900 MHz GSM LowNoise Amplifier , all times. Page 1 of 6 IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with , Unconditional Page 3 of 6 IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain , SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Table 4. Pin Descriptions Pin Name


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PDF IBM43RCLNA1115 IBM43RCLNA1115 lna1115 GSM LNA IBM REV 2.8 gsm amplifier schematic schematic GSM ESD IBM REV 2.8 Circuit sheet IBM Microelectronics igc1 gsm amplifier circuit
2001 - GSM lna

Abstract: igc1 IBM REV 2.8 ibm rev 2.1 lna gsm 900 IBM REV 2.8 Circuit sheet
Text: Preliminary Features IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain , Low-Noise Amplifier with Gain Control Preliminary Figure 2. SiGe 900 MHz GSM LNA Schematic 0.01uF VCC , 900 MHz GSM Low-Noise Amplifier with Gain Control . Table 3. AC Characteristics (VCC = 2.8Vdc , 6 IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Preliminary , November 21, 2001 Preliminary IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with


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PDF IBM43RCLNA1115 lna1115 GSM lna igc1 IBM REV 2.8 ibm rev 2.1 lna gsm 900 IBM REV 2.8 Circuit sheet
1997 - TRF7610

Abstract: No abstract text available
Text: TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 D , is a silicon MOSFET power amplifier IC for 900 -MHz applications, tailored specifically for global , MOSFET POWER AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 schematic VD1/VD2 13 , AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 recommended operating conditions , AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 APPLICATION INFORMATION In all cases, a


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PDF TRF7610 SLWS059B 35-dBm 30-dB 800-MHz 1000-MHz TRF7610
1997 - TRF7610EVM

Abstract: TRF7610
Text: TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 D D , connection description The TRF7610 is a silicon MOSFET power amplifier IC for 900 -MHz applications , TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED AUGUST 1998 , , TEXAS 75265 3 TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED , DALLAS, TEXAS 75265 TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM SLWS059B ­ MAY 1997 ­ REVISED


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PDF TRF7610 SLWS059B 35-dBm 30-dB 800-MHz 1000-MHz SWRA016 SWRA026 SLWA009 TRF7610EVM
2003 - ECM029

Abstract: GSM 900 module circuit diagram
Text: PRELIMINARY DATA SHEET ECM029 3V GSM POWER AMPLIFIER MODULE Features 3.5V Single Supply , SYMBOL PARAMETER MIN. LIMITS TYP. MAX. UNIT TEST CONDITION Frequency - GSM 900 880 Input Power - GSM 900 7 Output Power - GSM 900 35.0 Power Added Efficiency - GSM 900 42.0 48 Input Return Loss (50 Ohm , -000629-000 Revision A www.eiccorp.com 2 PRELIMINARY DATA SHEET ECM029 3V GSM POWER AMPLIFIER MODULE , 3V GSM POWER AMPLIFIER MODULE PACKAGE MARKINGS AND DIMENSIONS The ECM029 is a laminate based


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PDF ECM029 GSM900 ECM029 SS-000629-000 AP-000513-000 AP-000516-000 GSM 900 module circuit diagram
2001 - DIODE d1d

Abstract: diode d3d 25C5250 B23G diode D2B
Text: Dual-Band/ GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual­band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on­chip spur free voltage generator reduces the , circuit. RF input for GSM amplifier . An inductor and a capacitor are required for a proper matching to 50 , are: GSM : 35.8 dBm with 53% PAE and, DCS: 34 dBm with 43% PAE. It features a large band ( 900 to 1800 , . MRFIC1859 DUAL­BAND GSM 3.6 V IPA SEMICONDUCTOR TECHNICAL DATA · · · · · Single Positive Supply


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PDF MRFIC1859 GSM900/DCS1800 MRFIC1859 AN1599 MRFIC0913 MC33169 AN1697 DIODE d1d diode d3d 25C5250 B23G diode D2B
VA-PC 10

Abstract: DCS1800 ECM009 EGSM900 PCS1900 EIC 70
Text: PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications , ) 979-8902 www.eiccorp.com 1 PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER , MIN. LIMITS TYP. Frequency - GSM 900 880 Input Power - GSM 900 7 Output Power - GSM 900 35.0 Power Added Efficiency - GSM 900 52 Input Return Loss (50 Ohm) 15 Output Load Impedance 50 , time Po= -10 to 0dBm 1 Band Select GSM 900 Vbs 0.0 DCS 1800/PCS 1900 Vbs 2.0 Supply Voltage


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PDF ECM009 EGSM900 DCS1800 PCS1900 ECM009 88GHz, SS-000423-000 VA-PC 10 PCS1900 EIC 70
2001 - pll uhf vco

Abstract: VHF Amplifier Chip DUAL CHANNEL FM receiver CIRCUIT DIAGRAM philips tcxo 10mhz FM Modulator 2GHz MUX 4-1 vco 900 1800 mhz GSM DUAL CHANNEL FM TRANSMITTER CIRCUIT DIAGRAM circuit diagram transceiver signal gsm UHF band RF modulator
Text: where AMPS compatibility is required. · · · · · · · · · · · Quad Band GSM (800/ 900 /1800 , Band GSM ( 900 /1800/1900) Mobile Telephones Multimode GAIT IS136/ GSM Mobile telephones Dual Band (PCS1900/ 900 ) TDMA/AMPS Mobile telephones PCS 1900 TDMA Mobile Telephones The transmit path consists , amplifier and FM discriminator. An RSSI circuit is also provided. GSM The output of the agc amplifier , Description · The MGCX01 is a fully integrated transceiver for multimode IS136/ GSM /GPRS/EDGE handsets


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PDF MGCX01 PB5515 MGCX01 IS136/GSM/GPRS/EDGE IS136 pll uhf vco VHF Amplifier Chip DUAL CHANNEL FM receiver CIRCUIT DIAGRAM philips tcxo 10mhz FM Modulator 2GHz MUX 4-1 vco 900 1800 mhz GSM DUAL CHANNEL FM TRANSMITTER CIRCUIT DIAGRAM circuit diagram transceiver signal gsm UHF band RF modulator
2001 - circuit diagram transceiver signal gsm

Abstract: 1S136 DUAL CHANNEL FM TRANSMITTER CIRCUIT DIAGRAM IS136 diode 1S136 uhf amp circuit diagrams FM vhf transceiver DEG1900 DEG900 MGCX01
Text: where AMPS compatibility is required. · · · · · · · · · · · Quad Band GSM (800/ 900 /1800 , Band GSM ( 900 /1800/1900) Mobile Telephones Multimode GAIT IS136/ GSM Mobile telephones Dual Band (PCS1900/ 900 ) TDMA/AMPS Mobile telephones PCS 1900 TDMA Mobile Telephones The transmit path consists , amplifier and FM discriminator. An RSSI circuit is also provided. GSM The output of the agc amplifier , Description · The MGCX01 is a fully integrated transceiver for multimode IS136/ GSM /GPRS/EDGE handsets


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PDF MGCX01 PB5515 MGCX01 IS136/GSM/GPRS/EDGE IS136 circuit diagram transceiver signal gsm 1S136 DUAL CHANNEL FM TRANSMITTER CIRCUIT DIAGRAM IS136 diode 1S136 uhf amp circuit diagrams FM vhf transceiver DEG1900 DEG900
2009 - GSM module BLOCK diagram

Abstract: TQM7M5005H GSM module circuit diagram Power Amplifier Module for GSM GSM GPRS module GSM900 CLASS D POWER amplifier diagram gsm block diagram
Text: TQM7M5005H Data Sheet GSM /EDGE Multi-mode Power Amplifier Module Functional Block Diagram , TX_EN GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005H is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM /EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM /GPRS , efficiency ­ GSM 850 55%, GSM900 55%, DCS 49%, PCS 49%. · High EDGE efficiency ­ GSM 850 22%, GSM 900 22


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PDF TQM7M5005H TQM7M5005H 400KHz) GSM module BLOCK diagram GSM module circuit diagram Power Amplifier Module for GSM GSM GPRS module GSM900 CLASS D POWER amplifier diagram gsm block diagram
Not Available

Abstract: No abstract text available
Text: Tem ic TST0911 S e m i c o n d u c t o r s Dualband SiGe-Power Amplifier for GSM 900 /1800 , < 0 .2 V Current consumption (leakage current) 900 -MHz amplifier ( GSM ) Frequency range Input , and is suited for GSM 900 /1800/1900 ( GSM / DCS/ PCS) dual- or triple mobile phones. With a single , few external components. Features 900 -MHz amplifier and 1800/1900-MHz amplifier for dual , Block Diagram GND R F o u t l / V CC3 ( 900 MHz) ( 900 MHz) Harm onic tuning GSM Harmonic


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PDF TST0911 TST0911 900-MHz 1800/1900-MHz D-74025 20-May-99
2000 - GSM 900, 1800, 1900 max power diagram

Abstract: TST0911 TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935
Text: TST0911 Dualband SiGe Power Amplifier for GSM 900 /1800/1900 Description The TST0911 is a , Output impedance Zo 50 W 34.8 33.0 dBm dBm dBm 900 -MHz amplifier ( GSM ) Output , the functionality of two amplifiers in one package and is suited for GSM 900 /1800/1900 ( GSM / Electrostatic sensitive device. Observe precautions for handling. Features D 900 -MHz amplifier and 1800 , GND 5 Function Supply voltage 2 pp y g ( 900 -MHz amplifier ) VCC2 1 28 GND Ground


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PDF TST0911 TST0911 900-MHz 1800/1900-MHz D-74025 20-Sep-00 GSM 900, 1800, 1900 max power diagram TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935
2008 - Power Amplifier Module for GSM

Abstract: GSM900 TQM7M5005 gsm 900 amplifier
Text: TQM7M5005 Advance Data Sheet GSM /EDGE Multi-mode Power Amplifier Module Functional Block , Power Control TX_EN GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005 is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM /EDGE applications. This , %, PCS 49%. · High EDGE efficiency ­ GSM 850 24%, GSM 900 24%, DCS 25%, PCS 25% · Positive supply , high GSM /GPRS efficiency. In EDGE mode, the Vramp pin provides a continuously variable bias control


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PDF TQM7M5005 TQM7M5005 400KHz) Power Amplifier Module for GSM GSM900 gsm 900 amplifier
GSM 900, 1800, 1900 max power diagram

Abstract: TST0911 TST0911-TSQ TST0911-TSS gsm amplifier 1900 mhz rf power amplifier circuit diagram
Text: TST0911 Dualband SiGe-Power Amplifier for GSM 900 /1800/1900 Description The TST0911 is a , impedance Zo 50 W 34.8 33.0 dBm dBm dBm 900 -MHz amplifier ( GSM ) Output power , of two amplifiers in one package and is suited for GSM 900 /1800/1900 ( GSM / Electrostatic sensitive device. Observe precautions for handling. Features D 900 -MHz amplifier and 1800/1900 , -MHz amplifier ) VCC2 1 28 GND Ground VCC2 2 27 RFout1/VCC6 VCC1 Supply voltage 1 ( 900


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PDF TST0911 TST0911 900-MHz 1800/1900-MHz D-74025 20-Sep-00 GSM 900, 1800, 1900 max power diagram TST0911-TSQ TST0911-TSS gsm amplifier 1900 mhz rf power amplifier circuit diagram
2006 - 7M5004

Abstract: GSM module BLOCK diagram GSM900 GSM 300
Text: TQM 7M5004 Preliminary Data Sheet GSM /EDGE Multi-mode Power Amplifier Module Functional Block , Select VRAMP Power Control Vbias (digital) GSM 850 / 900 IN GSM 850 / 900 Out Product Description The TQM 7M5004 is an extremely small (7x7x1.1mm3) multi-mode power amplifier module for GSM /EDGE , %, GSM 900 23%, DCS 25%, PCS 25% · Low Quiescent Current Mode for EDGE Pout <= 18.5dBm (low-band) & <= , maintaining high GSM /GPRS efficiency. Two EDGE quiescent current states are provided to minimize current


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PDF 7M5004 7M5004 18dBm GSM module BLOCK diagram GSM900 GSM 300
1999 - Not Available

Abstract: No abstract text available
Text: TST0911 Dualband SiGe-Power Amplifier for GSM 900 /1800/1900 Description The TST0911 is a , 1.13 10 Max. 4.5 Unit V A A µA Current consumption (leakage current) 900 -MHz amplifier ( GSM , functionality of two amplifiers in one package and is suited for GSM 900 /1800/1900 ( GSM / DCS/ PCS) dual- or , power-down mode, the TST0911 needs few external components. Features D 900 -MHz amplifier and 1800/1900 , GND VCC,CTL RFin2 GND VCC4 Function Supply pp y voltage g 2 ( 900 -MHz amplifier ) Ground Supply


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PDF TST0911 TST0911 900-MHz 1800/1900-MHz D-74025 20-May-99
2009 - GSM module BLOCK diagram

Abstract: gsm module 900 Power Amplifier Module for GSM TQM7M5005 gsm block diagram GSM GPRS module GSM900
Text: TQM7M5005 Advance Data Sheet GSM /EDGE Multi-mode Power Amplifier Module Functional Block , Power Control TX_EN GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005 is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM /EDGE applications. This , high GSM /GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die , %, GSM 900 22%, DCS 25%, PCS 25% · Positive supply voltage ­ 3.0 to 4.5 V · 50 input and output


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PDF TQM7M5005 TQM7M5005 400KHz) GSM module BLOCK diagram gsm module 900 Power Amplifier Module for GSM gsm block diagram GSM GPRS module GSM900
2008 - gsm block diagram

Abstract: GSM module BLOCK diagram
Text: TQM7M5005 Advance Data Sheet GSM /EDGE Multi-mode Power Amplifier Module Functional Block , Logic GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005 is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM /EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM /GPRS , %, GSM 900 22%, DCS 25%, PCS 25% · Positive supply voltage ­ 3.0 to 4.5 V · 50 input and output


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PDF TQM7M5005 TQM7M5005 400KHz) gsm block diagram GSM module BLOCK diagram
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