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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

germanium transistors NPN Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS e) PACKAGED CIRCUITS Newmarket , Field Effect Transistors Silicon Chips Germanium Transistors CV Transistors Package Outlines , wants you to have. 7 Silicon Transistors NPN Silicon Planar Transistors for low-level audio , * NPN Silicon Planar Transistors for high speed switching and high frequency use B y CEO V BSY , ) 9 Silicon Transistors NPN Silicon Planar Transistors for medium level switching Type M


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pnp germanium transistor

Abstract: germanium transistors PNP Germanium Transistors
Text: and NPN transistors FET’s, SCR’s NPN or PNP FET as N-channel or P-channel Silicone or germanium transistors Reverse leakage from 0.1mA to 9mA PNP and NPN transistors FET’s NPN or PNP , , FET’s, and SCR’s. It also identifies NPN or PNP for transistors , N-channel or Pchannel for FET , transistors FET’s, SCR’s NPN or PNP FET as N-channel or P-channel NPN or PNP FET as N-channel or P-channel FET-gate lead, all leads of Silicone or germanium transistors transistors in LO drive, base


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sx3704

Abstract: BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
Text: S ilicon Diodt BA151 BA147 BA114 1S44 D3 AF25 ME0404/2 GP Germanium Diodi NPN D , ilicon NPN . Base E . Base C . Base A Germanium PNi AF125 AF115 . Base , RF Germanium RF S ilicon NPN BF200 AF139 Large Signal IF S ilicon NPN BF197 , transistors covered in the Classified section, always quote the Classification number. In the case of , transistors by the engineer when replacing a transistor in its heatsink during servicing. INTRODUCTION


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PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
2N1021

Abstract: 2N1021A 2N1022 2N1022A
Text: SPRINGFIELD, NEW JERSEY 07081 U.SA germanium power transistors PNP TO-3 (cont'd) Type* 2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2N1021A 2N1022A 2N627 2N628 2N629 NPN Comple- VCGOISUS] Voo ment , . 10 Amp PNP Germanium Alloy Power Transistors . Case 280 General Purpose Power Switch and , Germanium Alloy Power Transistors . Case 280 High Current General Purpose Power Switch and Amplifier , Amp PNP Germanium Mloy Power Transistors . Case 280 High Current General Purpose Power Switch


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PDF 2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2N1021A 2N1022A 2N627 2N628 2N1021 2N1021A 2N1022 2N1022A
2010 - npn 10 a 50 v to-3 germanium

Abstract: TO10 package germanium transistors NPN ck411 2SB449 germanium 2n1040 npn 10 a 50 v germanium AUY26 2N1041
Text: POWER GERMANIUM TRANSISTORS Item Number «C Part Number Manufacturer Type Max V(BR , Index CentralSemi Germanium NthAmerSemi See Index NthAmerSemi See Index See Index See Index See Index CentralSemi Germanium NthAmerSemi CentralSemi Germanium See Index See Index Germanium See Index Germanium See Index See Index See Index See Index See Index See Index See Index Germanium See Index Germanium , Index See Index See Index CentralSemi Germanium NthAmerSemi Germanium NthAmerSemi See Index See Index


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PDF 2N2554 2N2558 2N1756 2N1760 2N3160 2N3156 2N1039 2N2555 2N2559 CK258 npn 10 a 50 v to-3 germanium TO10 package germanium transistors NPN ck411 2SB449 germanium 2n1040 npn 10 a 50 v germanium AUY26 2N1041
NKT677

Abstract: NKT612 AD149 NKT275 1/equivalent transistor ac127 ORP12 GEX34 sft353 OC171 equivalent ac128
Text: Frequency 1000c/s. Source impedance 500C! 15 AC 157 GERMANIUM ALLOY TRANSISTOR n-p-n Class B , €”30mA (m ax) 21 (V C B = —1V, IE=0) -7 [iA AC 176 GERMANIUM ALLOY TRANSISTOR n-p-n , ) = -1 A, VCE= —1V) 100 AD 149 GERMANIUM ALLOY TRANSISTORS p-n-p AF or TV Field Power , excluded. 2. Transistors . 3. Germanium and Silicon diodes. 4. Copper oxide and Selenium , British entertainment equipment 2. Transistors 3. Germanium and Silicon diodes 4. Copper oxide and


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PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 AD149 NKT275 1/equivalent transistor ac127 ORP12 GEX34 sft353 OC171 equivalent ac128
NP-N110

Abstract: MD14 D.A.T.A. Germanium NPN Transistors NPN110 TRL3015 transistor m014 TRL3505 TRL3515S TRL4015 germanium transistors NPN
Text: SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors 40UC 45°C 50°C 75"C J Symbols indicate temperature at which derating starts. 0 — With , (Also see top of reverse side of card.) Ill 11. SILICON NPM ■H GH POWER TRANSISTORS IN ORDER OF


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PDF NPN110. NP-N110 MD14 D.A.T.A. Germanium NPN Transistors NPN110 TRL3015 transistor m014 TRL3505 TRL3515S TRL4015 germanium transistors NPN
857m

Abstract: DME 40 MM4023 SC0421 SCC421 SCD421 TIXP07
Text: SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors 40UC 45°C 50°C 75"C J Symbols indicate temperature at which derating starts. 0 — With , (Also see top of reverse side of card.) Ill 10. SILICON PNP ■HIGH POWER TRANSISTORS IN ORDER OF (1


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PDF NPN110. 857m DME 40 MM4023 SC0421 SCC421 SCD421 TIXP07
2N439

Abstract: No abstract text available
Text: , One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N439 - 2N439A NPN HIGH FREQUENCY COMPUTER TRANSISTORS 2N439 and 2N439A are NPN alloy-junction germanium transistors . Their basic NPN nature (high mobility electron flow) renders these transistors capable of very fast response under transient pulse operation. Their design is ideal for switching and flip-flop circuits. They are contained in a welded package equipped with


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PDF 2N439 2N439A 2N439A 2N439Ahas
TFK 404

Abstract: BCI83L T1S58 transistor bf 175 BCI09 tis62 akai amplifier v744 kd 2060 transistor TFK diode
Text: Q i O wi- CV Versions Chopper transistors N.P.N . Amplifiers — Minimum fr less than 100 M hz , N.P.N . Switching transistors P.N.P. Switching transistors Silicon N.P.N . diffused power Silicon P.N.P. diffused power Silicon N.P.N . planar power Silicon P.N.P. planar power Germanium P.N.P. power R & , N.P.N . Dual transistors Here the minimum value of Hfe is shown at the collector current at which , ! TYPES BCI07, BCI08, BCI09 N-P-N EPITAXIAL PLANAR SILICON TRANSISTORS • F or L o w -L e v e l, L


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PDF 20nttc* 10N12* TFK 404 BCI83L T1S58 transistor bf 175 BCI09 tis62 akai amplifier v744 kd 2060 transistor TFK diode
LT5210

Abstract: transistor LT5210 2N102 LTS202 AD165 LT5202 AC179 2N142 LT521 LT5165
Text: SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors 40UC 45°C 50°C 75"C J Symbols indicate temperature at which derating starts. 0 — With , (Also see top of reverse side of card.) Ill 9. GE RMANIUM N PN • HIGH POWER TRANSISTORS IN ORDER


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PDF NPN110. LT5210 transistor LT5210 2N102 LTS202 AD165 LT5202 AC179 2N142 LT521 LT5165
rca transistor manual

Abstract: rca case outlines 2n173 2N1637 transistor rca drift-field rca thyristor manual transistor bf 175 2N140 2N301 Germanium diode OA 182
Text: n-p-n and p-n-p transistors to show the difference in the direction of cur­ rent flow in the two , silicon. Germanium has higher electrical conductivity (less resistance to current flow) than silicon , high-power devices than germanium because it can be used at much higher temperatures. A relatively new ma , . 1. Pure germanium has a resistivity of 60 ohm-centi­ meters. Pure silicon has a consider­ ably , | ■I I | M ' | - H COPPER GERMANIUM I03 j I06 | | | SILICON GLASS â


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transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook sje389 LT 8224 ZENER DIODE npn transistor RCA 467 N9602N PUT 2N6027 TFK 7 segment displays delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR I I 3 6 SPECIAL FUNCTION IC's (DIGITAL / LINEAR) ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC's IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC 1C APPLICATION NOTES HEAT SINKS INSULATORS · . . · 0 · · TRANSISTORS POWER SMALL SIGNAL ARRAYS TRANSISTORS FET TRANSISTORS SCR & SWITCHES TRIACS UNIJUNCTION MATCHED S CHECKED t r a n s is t o r s a 9 12 1 I3 1 I4 INDEX


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2015 - Not Available

Abstract: No abstract text available
Text: of germanium transistors . * Less power dissipation because of lWO Collector-to-Emitter Voltage VCE , UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS  DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V , -92 1 of 3 QW-R208-010.C 2SD879  NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING , UNIT V V V V V A A V MHz pF 2 of 3 QW-R208-010.C 2SD879 NPN EPITAXIAL SILICON


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PDF 2SD879 2SD879 2SD879s QW-R208-010
2004 - germanium transistors NPN

Abstract: 2sd879 transistor germanium MS 3A
Text: charge time is approximately 1 second faster than that of germanium transistors . *Less power , UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications , UTC NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-010,A UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures


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PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010 germanium transistors NPN transistor germanium MS 3A
2004 - 2sd879

Abstract: germanium transistors NPN
Text: charge time is approximately 1 second faster than that of germanium transistors . *Less power , UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications , UTC NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-043,A UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures


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PDF 2SD879 2SD879 2SD879s QW-R201-043 germanium transistors NPN
2011 - Not Available

Abstract: No abstract text available
Text: second faster than that of germanium transistors . * Less power dissipation because of lWO , UNISO TE NIC CHNO G SCO LTD LO IE ., 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1 .5 V , 3 V ST ROBE APPLI CAT I ON S ̈ DESCRI PT I ON The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. ̈ FEAT U RES * In applications where two , -010.Ba 2SD879 ̈ NPN EPITAXIAL SILICON TRANSISTOR ABSOLU T E M AX I M U M RAT I N G ( TA=25 ,unless


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PDF 2SD879 2SD879 2SD879s QW-R208-010
2011 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V , 2.4V, two 2SD879s are used. * The charge time is approximately 1 second faster than that of germanium transistors . * Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more , -010.Ba 2SD879 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25 ,unless otherwise


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PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010
2011 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 1.5V, 3V STROBE APPLICATIONS DESCRIPTION NPN EPITAXIAL SILICON TRANSISTOR The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V , 2.4V, two 2SD879s are used. * The charge time is approximately 1 second faster than that of germanium transistors . * Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more , -010.Ba 2SD879 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25 ,unless otherwise


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PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010
2N1305

Abstract: J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1309 2N1303 2N1306 2N1308 transistor 2N1309
Text: detail requirements for NPN and PNP, complementary germanium , high-frequency transistors - 1.2 Physical dimensions. See figure 1 (TO-5). 1. 3 Maximum ratings. PT 1/ VCB VEB I C Tstg NPN PNP NPN PNP NPN PNP , SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, GERMANIUM , HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306 , transistors of only one family ( NPN or PNP). For subgroups 1 through 5 of group B tests and subgroup 1 of , charge pC- - Pico-coulombs 3. 3 Design, consturction, and physical dimensions. Transistors shall


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PDF MIL-S-19500/126C MIL-S-19500/126B 2N1302, 2N1304, 2N1306, 2N1308 2N1303, 2N1305, 2N1307, 2N1309 2N1305 J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1309 2N1303 2N1306 transistor 2N1309
2003 - radar 77 ghz sige

Abstract: SiGe PNP transistor automotive radar ghz cmos atmel 006 germanium transistors NPN zener 12v germanium
Text: Metal Layers Operating up to 200°C High-densitiy 5 V N- and P-MOS Transistors DMOS High-voltage Capability up to 85 V DMOS Family for 25, 40, 65 and 85 V Available Bipolar PNP and NPN Transistors , Germanium HIGH-SPEED TECHNOLOGY FOR COMMUNICATIONS APPLICATIONS Compared to standard silicon, SiGe provides superior noise performance and faster, more efficient transistors (HBT). Applications , Amplifiers, Low-noise Amplifiers SiGe1 and SiGe2 Every 60 Days Design Kits Cadence® ADS NPN


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PDF 4603B-SiGe-02/03/10M radar 77 ghz sige SiGe PNP transistor automotive radar ghz cmos atmel 006 germanium transistors NPN zener 12v germanium
WESTINGHOUSE ELECTRIC

Abstract: westinghouse transistors 1B25A westinghouse 00140038 westinghouse germanium VCC12 Germanium power 140a60 westinghouse "OEM Line"
Text: Westinghouse types 151 arid 152 NPN silicon power transistors are a series of low-cost units designed expressly , units can replace two or more germanium power transistors . Maximum Ratings Voltage Type VcBO Vce , Westinghouse Typical Applications Amplifiers Switching Circuits Industrial Controls Regulators Power Supplies Pulsa Generators Oscillators Inverters Ignition Systems Modulators Servo Systems Sweep Circuits Logic Circuits Active Filters TD 54-672 Page 1 "O.E.M. Line" Silicon Power Transistors


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PDF 75Dio-H 140A602G12 C/2116/DB; C/2117 WESTINGHOUSE ELECTRIC westinghouse transistors 1B25A westinghouse 00140038 westinghouse germanium VCC12 Germanium power 140a60 westinghouse "OEM Line"
westinghouse transistors 153-20

Abstract: Westinghouse westinghouse transistors WESTINGHOUSE ELECTRIC westinghouse semiconductor WESTINGHOUSE ELECTRIC 153-06 154-06 westinghouse "OEM Line" M40A6 153-06
Text: Westinghouse types 153 and 154 NPN silicon power transistors are a series of low-cost units designed expressly , units can replace two or more germanium power transistors . Maximum Ratings Voltage Type Vcbo VCE , Westinghouse Typical Applications Amplifiers Switching Circuits Industrial Controls Regulators Power Supplies Pulse Generators Oscillators Inverters Ignition Systems Modulators Servo Systems Sweep Circuits Logic Circuits Active Filters TD 54-672 Page 3 "O.E.M. Line" Silicon Power Transistors


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PDF 1S697 S/M40A601G23. C/2116/DB; C/2117 westinghouse transistors 153-20 Westinghouse westinghouse transistors WESTINGHOUSE ELECTRIC westinghouse semiconductor WESTINGHOUSE ELECTRIC 153-06 154-06 westinghouse "OEM Line" M40A6 153-06
westinghouse transistors 163-H72

Abstract: westinghouse transistors westinghouse westinghouse "OEM Line" westinghouse transistors 163-H71 westinghouse semiconductor westinghouse germanium 164-16 163-06 164-28
Text: Westinghouse Types 163 and 164 NPN silicon power transistors are a series of low-cost units designed expressly , units can replace two or more germanium power transistors . Maximum Ratings Voltage Type Vcbo Vce , Wesfinghouse Typical Applications Amplifiers Switching Circuits Industrial Controls Regulators Power Supplies Pulse Generators Oscillators Inverters Ignition Systems Modulators Servo Systems Sweep Circuits Logic Circuits Active Filters TD 54-672 Page 5 "O.E.M. Line" Silicon Power Transistors


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PDF Dry-30-50ln Ubricoted-25-30ln SW140A602G12 C/2116/DB: C/2117 westinghouse transistors 163-H72 westinghouse transistors westinghouse westinghouse "OEM Line" westinghouse transistors 163-H71 westinghouse semiconductor westinghouse germanium 164-16 163-06 164-28
MHT1909

Abstract: 2N1908 MHT1810 HT1808 MP507A MHT-18 MHT1910 MHT2002 MHT2003 MHT2004
Text: SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors 40UC 45°C 50°C 75"C J Symbols indicate temperature at which derating starts. 0 — With , (Also see top of reverse side of card.) Ill 8. GERMANIUM PNP ■HIGH POWER T LINE No. u TYPE No


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PDF NPN110. MHT1909 2N1908 MHT1810 HT1808 MP507A MHT-18 MHT1910 MHT2002 MHT2003 MHT2004
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