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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

germanium transistor ac 128 Datasheets Context Search

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transistor d 1557

Abstract:
Text: 25C D ■fl235bQS 0DQ4Q81 5 ■SIEG PNP Germanium UHF Transistor AF 280 S - SIEMENS AKTIENGESELLSCHAF - for mixer and oscillator circuits up to 900 MHz AF 280 S is a germanium PNP UHF planar transistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T0119. This transistor is particularly intended for use in mixer and oscillator circuits up to 900 MHz in diode tuned , Junction temperature T\ 90 °C Storage temperature range Tstg -30 to +75 °C Total power dissipation Ptot


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PDF fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 AF 280 S 900 mhz germanium diode Q62701-F88
NKT677

Abstract:
Text: deg C /m W 11 3 = — 1mA, AC 128 GERMANIUM ALLOY TRANSISTOR p-n-p Class A or Class B , AC 154 5-97 m m 0 -235irv max GERMANIUM ALLOY TRANSISTOR p-n-p Class B push-pull AF , impedance 50011 14 AC 156 GERMANIUM ALLOY TRANSISTOR p-n-p AF Amplifier or Driver b W hite , Frequency 1000c/s. Source impedance 500C! 15 AC 157 GERMANIUM ALLOY TRANSISTOR n-p-n Class B , V, = ie = 0 ) 800 m V 250 m V pF AC 165 GERMANIUM ALLOY TRANSISTOR p-n-p AF


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PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 1/equivalent transistor ac127 OC171 equivalent AD149 ORP12 ac128 NKT275 sft353 GEX34
transistor K52

Abstract:
Text: XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type E D I S W A N MAZDA TENTATIVE GENERAL The XCIOI is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element , TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ CHARACTERISTICS (at 25°C.). Small Signal Values (average , I S W A N MAZDA XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL , OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE Mean Total Base Current at Maximum Power Output


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ci 740

Abstract:
Text: E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XBI03 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the , CUT DIVISION Issue 2/4 SIEMENS EDISON SWAN LIMITED E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium , DIVISION Issue 2/4 SIEMENS EDISON SWAN LIMITED E D I S W A N MAZDA \ O XBI03 L.F. TRANSISTOR Germanium , SWAN LIMITED E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS


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PDF XBI03 ci 740 ci740 germanium transistor pnp Lf transistor germanium Power Transistor power germanium transistor pnp Germanium power germanium ac Germanium
TRANSISTOR 3F z

Abstract:
Text: E D I S W A N MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XAIOI , . TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS 0.295" Max. 0.285"Min . HH 1 1.2 , XAIOI I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit , . TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit Ambient , SWAN LIMITED MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES


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germanium transistor pnp

Abstract:
Text: E D I S W A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ GENERAL The , A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE Static Current , XAI02 R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS ■0.5  , N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL CIRCUIT , MAZDA XAI02 I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter


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PDF XAI02 germanium transistor pnp Germanium germanium pnp pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
pnp germanium transistor

Abstract:
Text: from 0.1µA to 9mA for Ice leakage, calibrated for silicon and germanium power and signal transistor , 520C Specifications Model 520C Industrial Transistor Tester IN-CIRCUIT TEST The B+K Precision model 520C Transistor Tester is designed for in-circuit and out-of circuit transistor testing , the device terminal identification. ■A LED array identifies leakage in both Silicon and Germanium devices. ■Front Panel socket for out-of –circuit transistor testing. Model 510A Portable


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transistor D 1557

Abstract:
Text: 5SC » fi235bOS GG04QÔ1 S H S I E â À F 280 S AKTIENGESELLSCHAF " PNP Germanium UHF Transistor -SIEMENS - fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is , re a t f = 8 0 0 M H z ffL= 2 k fl 128 1 558 F -13


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PDF fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode AF280 Germanium power transistor 1557 b transistor IC 1557 B
2011 - Not Available

Abstract:
Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for , , cellular, UMTS BFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 , germanium RF transistor 4. Marking Table 4. Marking Type number Marking Description , transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified Symbol


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PDF BFU760F OT343F JESD625-A
2011 - germanium transistor ac 125

Abstract:
Text: wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C , germanium RF transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified , BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for , Semiconductors NPN wideband silicon germanium RF transistor 4. Marking Table 4. Marking Type number


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PDF BFU730F OT343F JESD625-A germanium transistor ac 125
free transistor

Abstract:
Text: E D I S W A N MAZDA XAI04 R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE GENERAL The XAI04 is a pnp junction type transistor suitable for use as a frequency changer and or oscillator on the , . TRANSISTOR Germanium PNP Junction Type TENTATIVE COMMON EMITTER EQUIVALENT tt NETWORK Small Signal Values at , SWAN LIMITED E D I S W A N MAZDA XAI04 R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS , of the transistor is hermetically sealed in a small can. RATINGS—Absolute Values for 45°C. Ambient


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PDF XAI04 XAI02 free transistor germanium transistor pnp MC 150 transistor small signal germanium transistor transistor siemens ss Germanium Transistor pnp transistor oscillator circuit S parameters of RF transistor germanium pnp transistor PNP 5 w
2011 - Not Available

Abstract:
Text: silicon germanium RF transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise , BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for , wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data , NXP Semiconductors NPN wideband silicon germanium RF transistor 4. Marking Table 4. Marking


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PDF BFU710F OT343F JESD625-A
free transistor

Abstract:
Text: E D I S W A N MAZDA XAI03 I.F. TRANSISTOR Germanium PNPJunction Type TENTATIVE GENERAL The XAI03 is a pnp junction type transistor suitable for use as an I.F. Amplifier at frequencies between 250 and , SWAN LIMITED E D I S W A N MAZDA XAI03 I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS , transistor is hermetically sealed in a small can. RATINGS—Absolute Values for 45°C. Ambient (Maximum , Voltage (volts) —1 Maximum Collector Dissipation (mW) 60 Maximum Junction Temperature ( °C ) 65 Maximum


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PDF XAI03 free transistor common base amplifier circuit transistor free MC 150 transistor transistor Common Base amplifier "MC 150" transistor S PARAMETERS FOR TRANSISTOR germanium transistor pnp if TRANSISTOR transistor siemens ss
ac176

Abstract:
Text: 2N3053 2N3054,5 AC107N AC 128 AC 176 ACY17.22 ACY27.31 ACY34.36 ACY39.41 ACY44 AD 132 , NPN Silicon Microminiature Plastic Transistor T yp e Characteristics @ T am b= 25 °C Colour , c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS e) PACKAGED CIRCUITS Newmarket , Field Effect Transistors Silicon Chips Germanium Transistors CV Transistors Package Outlines , modern semiconductor technology. All Newmarket Transistor circuits use chip transistors, diodes


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ua78540

Abstract:
Text: associated with ac applications because of their drive simplicity and inherent self turn off when the anode , SCR VTM CVTM of an SCR is the sum of VcE(sat) 811(1 VRECsat) of the two transistor equivalent circuit). For an NrN clamp transistor , the emitter can either be tied directly to the SCR cathode or to a , comparably sized transistor . And, the peak surge current ratings (1/2 cycle sine wave) can be perhaps ten , cart controller is shown in Figure 1. Germanium power transistors were used by the authors because of


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PDF EB121/D EB121 ua78540 MOTOROLA SCR TL494 PWM motor controller TL494 PWM motor tl494 equivalent scr dc motor forward reverse control scr driving circuit for dc motor application SCR MOTOROLA SCR driver using low current scrs
2N1671B

Abstract:
Text:  Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications The | GPD Unijunction Transistor is a three terminal device having a stable "N" type negative resistance characteristic , generators where it can serve the purpose of two conventional silicon or germanium transistors. The 2N1671 is , Range —65°C to +140 °C Storage Temperature Range —65°C to -f 150°C «•fi i: The SMCiMd lead dumeiw ac plies m ine ¿one M:«e«ri 050 and 250 tmm Ine base seal. 0e!*e«r .250 aid I 5 rrajimjm of


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PDF 2N1671 2N1671A 2N1671-2N1671A) 2N1671B) 3CI47375 G000742 2N1671B 160 germanium transistor 2N1671-2N1671A Germanium Power Devices 2N1671C Germanium power 2NI67 029T
2000 - ACS 086

Abstract:
Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 · High gain low noise RF transistor 4 · Provides outstanding performance for a wide range of wireless applications · Ideal for , Gold metallization for extra high reliability · 70 GHz fT - Silicon Germanium technology ESD , IC = 20 mA, VCE = 1.5 V V(BR)CEO AC characteristics (verified by random sampling , 13.6 11 8.7 6.6 25.4 18.5 17.8 15.1 12.8 11 9 0.16 0.21 0.24 0.27 0.32 0.36 0.41


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PDF VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 4ghz s parameters transistor acs sot-343 s parameters 4ghz SOT 343 MARKING BF silicon rf transistor s parameters up to 4ghz fa 5571 BFP620ACs TRANSISTOR NPN 5GHz
free transistor and ic equivalent data

Abstract:
Text: bipolar process with a transition frequency of 27GHz) by doping the transistor bases with germanium . The , effect of these two changes is better noise figure for the Silicon Germanium transistor (vs. that of a , BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Mar 15, 2000 Silicon Germanium , germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects , . Silicon Germanium (SiGe) is the newest innovation for simultaneously improving the power consumption


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PDF MAX2644: MAX2645: MAX2648: MAX2649: MAX2651: MAX2654: MAX2680: MAX2683: MAX3273: MAX3892: free transistor and ic equivalent data free transistor Germanium Amplifier Circuit diagram germanium transistors NPN GERMANIUM TRANSISTOR silicon bipolar transistor low noise amplifier k2a2 Germanium Amplifier silicon germanium Transistor VN
rca transistor manual

Abstract:
Text: the transistor electrodes. Dynamic characteristics are obtained with an ac voltage on one electrode , of 49 microamperes (147-98) in the collector current. Thus the ac beta for the transistor is 49 , RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with , RCA TYPIC A L S E M I C O NID U C T O IR DUCTO DEVICES Tunnel Diode ft Transistor RCA Transistor M anual MATERIALS, JUNCTIONS, AND DEVICES S E M IC O N D U C TO R devices are


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2000 - marking g45

Abstract:
Text: RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-4500 MHz, Silicon Germanium Cascadeable Gain Block , Output P1dB Input Return Loss Reverse Isolation Noise Figure 12.8 9.5 -1.5 12.7 17.4 4.6 dB , Noise Figure 12.7 9.4 -1.8 12.8 17.6 4.7 dB dBm dBm dB dB dB 1950 MHz Gain Output , Lchoke AC Blocki ng 68 nH 33 nH 22 nH 18 nH 522 Almanor Ave., Sunnyvale, CA 94085


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PDF SGA-0163 SGA-0163 50-ohm DC-4500 EDS-101494 marking g45 germanium transistor ac 128
2001 - marking A45

Abstract:
Text: RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-2500 MHz, Silicon Germanium Cascadeable Gain Block , 2400 MHz dB m dB m dB m 15.0 12.8 11.6 IP3 Thi rd Order Intercept Poi nt Power out per , 20.2 26.2 12.8 19.9 24.5 2.4 dB dBm dBm dB dB dB 2400 MHz Gain Output IP3 Output , 1 uF 1 uF 1 uF C d2 D ecoupli ng 100 pF 68 pF 22 pF 22 pF Lchoke AC


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PDF SGA-4563 SGA-4563 50-ohm DC-2500 EDS-101803 marking A45 germanium transistor ac 128 marking A45 RF TRANSISTOR 726
free transistor and ic equivalent data

Abstract:
Text: transistor bases with germanium . The result was an important decrease in Rbb´ and a significant increase in , frequencies, consider that adding germanium to the p-silicon base of a transistor reduces the bandgap by 80mV , : silicon germanium , SiGe, rfic, rf design, lna, rfics, rf ics Mar 15, 2000 APPLICATION NOTE 697 Silicon Germanium (SiGe) Technology Enhances Radio Front-End Performance Abstract: This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to


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PDF MAX2648: MAX2649: MAX2651: MAX2654: MAX2680: MAX2683: MAX3273: MAX3892: MAX9987: MAX9988: free transistor and ic equivalent data AN697 germanium npn Silicon Power Cube MAX2321 MAX2247 k2a2 germanium transistors NPN Germanium Power Devices free transistor
Not Available

Abstract:
Text: su ^£.mi-dond\jictoi Lptoauoli, Una. LS 2N458A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 PNP GERMANIUM POWER TRANSISTOR JEDEC TO-3 CASE 2N458A type is a PNP Germanium Alloy Junction Power Transistor manufacture in a hermetically sealed metal case, designed for high voltage amplifier and switching circuits , 7.0 Base Current IB 3.0 A 150 W -55 to +100 0.5 °C °C /W Power


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PDF 2N458A 2N458A
2n297a

Abstract:
Text: )227-6005 FAX: (973) 376-8960 POWER TRANSISTOR GERMANIUM PNP POWER TRANSISTOR 2N297A is a germanium , applications for the transistor , There are numerous other applications to regulators, power supply and oscillator circuits, 2N297A transistor features welded construction and cadmium plating with a vacuum-tight , -3 outline. ABSOLUTE MAXIMUM RATINGS V CE Vdc Vcu Vdc Ic Adc P. W T,sli, r l ,gt; °c 60 5.0 35 50 Thermal Resistance; 1.5"C,'W typical and 2 r 'C/\ maximum. °C -65 to +95


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PDF 2N297 2N297A MlL-T-19500 2X297A
2011 - BFU790F

Abstract:
Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 - 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for , , cellular, UMTS BFU790F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 , Semiconductors NPN wideband silicon germanium RF transistor 4. Marking Table 4. Marking Type number , wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C


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PDF BFU790F OT343F JESD625-A BFU790F Germanium power
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