2008 - mv30007
Abstract: gaas varactor diodes mv31026 MV30016 MV34004 MV34010 MV31011 MV31021 MV3000 "Varactor Diodes"
Text: GaAs Varactor Diodes Hyperabrupt ® TM MV30011 MV34010 Features High Q Values for , Page 2 GaAs Varactor Diodes Hyperabrupt ® TM MV30011 MV34010 High Q Constant Gamma , Page 3 GaAs Varactor Diodes Hyperabrupt TM Copyright 2008 Rev: 2009-05-11 ® MV30011 , hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at Microsemi by the Chemical , Varactor Diodes Hyperabrupt ® TM MV30011 MV34010 High Q Constant Gamma Tuning Varactors
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MV30011
MV34010
ga010
mv30007
gaas varactor diodes
mv31026
MV30016
MV34004
MV34010
MV31011
MV31021
MV3000
"Varactor Diodes"
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2008 - Not Available
Abstract: No abstract text available
Text: GaAs Varactor Diodes Hyperabrupt ® TM MV30011 â MV34010 Features High Q Values for , Applications Description VCOs Microsemiâs GaAs hyperabrupt junction varactor diodes are fabricated , , 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Varactor Diodes Hyperabrupt ® TM MV30011 â MV34010 , Page 2 GaAs Varactor Diodes Hyperabrupt ® TM MV30011 â MV34010 High Q Constant Gamma , : 978-937-3748 Page 3 GaAs Varactor Diodes Hyperabrupt TM Copyright ï£ 2008 Rev: 2009-05-11 Â
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MV30011
MV34010
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2008 - mv30007
Abstract: mv31026 MV3101 mv30016 MV3100 MV31019 MV34010 MV31012 mv3102 MV3001
Text: GaAs Varactor Diodes Hyperabrupt TM ® MV30011 MV34010 Features High Q Values for , Applications Description Microsemi's GaAs hyperabrupt junction varactor diodes are fabricated from , Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Varactor Diodes , , 978-442-5600, Fax: 978-937-3748 Page 2 GaAs Varactor Diodes Hyperabrupt TM ® MV30011 MV34010 , 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GaAs Varactor
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MV30011
MV34010
mv30007
mv31026
MV3101
mv30016
MV3100
MV31019
MV34010
MV31012
mv3102
MV3001
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2008 - MV21005
Abstract: gaas varactor diodes Tuning Varactors MV20000
Text: GaAs Varactor Diodes TM ® Abrupt Junction MV20001 MV21010 Features High Q , GaAs Varactor Diodes TM ® Abrupt Junction MV20001 MV21010 Specifications @ 25°C Gamma = , Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available Applications VCOs Phase-Locked Oscillators High Q Tunable Filters Phase Shifters Pre-Selectors Description Microsemi's GaAs , repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for
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MV20001
MV21010
MV21005
gaas varactor diodes
Tuning Varactors
MV20000
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2008 - Not Available
Abstract: No abstract text available
Text: GaAs Varactor Diodes Abrupt Junction ® TM MV20001 â MV21010 Features High Q Values , Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Varactor Diodes , Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available Applications VCOs Phase-Locked Oscillators Description High Q Tunable Filters Microsemiâs GaAs abrupt junction , tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for
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MV20001
MV21010
MV21006
MV21007
MV21008
MV21009
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2008 - gaas varactor diodes
Abstract: MV2101 MV21004 MV20001
Text: GaAs Varactor Diodes Abrupt Junction ® TM MV20001 MV21010 Features High Q , GaAs Varactor Diodes Abrupt Junction ® TM MV20001 MV21010 Specifications @ 25°C Gamma = , Available as Chip or Packaged Diodes Available in Chip-on-Board Packaging Custom Designs , Filters Phase Shifters Pre-Selectors Microsemi's GaAs abrupt junction varactors are , diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to
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MV20001
MV21010
varietMV21005
MV21006
MV21007
MV21008
MV21009
gaas varactor diodes
MV2101
MV21004
MV20001
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millimeter wave radar
Abstract: varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
Text: GaAs Varactor Diodes FIGURE 4. Theoretical Efficiency of x3 GaAs Varactor Multipliers FIGURE 2. Varactor Diode Equivalent Circuit FIGURE 5. Theoretical Efficiency of x4 GaAs Varactor Multipliers FIGURE 3. Theoretical Efficiency of x2 GaAs Varactor Multipliers M/A-COM, Inc. 43 South Ave , (cutoff at 0 volts) performance curve. 3. All GaAs multiplier diodes are available in any case style shown , MA48700 Series GaAs Multiplier Varactors Features HIGH CUTOFF FREQUENCY OPERATING
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MA48700
and43
millimeter wave radar
varactor multiplier
frequency multiplier X3
millimeter gunn diode
IMPATT
MA48701A
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1996 - millimeter wave radar
Abstract: varactor MA48700 MA48701E MA48702E MA48703E MA48704E MA48705E MA48706C MA48707C
Text: AND SIX VOLTS IN GAAS VARACTOR DIODES THEORETICAL EFFICIENCY OF X2 GAAS VARACTOR MULTIPLIERS THEORETICAL EFFICIENCY OF X3 GAAS VARACTOR MULTIPLIERS THEORETICAL EFFICIENCY OF X4 GAAS VARACTOR , GaAs Multiplier Varactors MA48700 Series V3.00 Features q q Case Styles High Cutoff , . These diodes may be used to double or triple the frequency output of a phase locked source for , GaAs Multiplier Varactors V3.00 Electrical Specifications @ 25°C Model3 Number Minimum
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MA48700
millimeter wave radar
varactor
MA48701E
MA48702E
MA48703E
MA48704E
MA48705E
MA48706C
MA48707C
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gaas varactor diodes
Abstract: No abstract text available
Text: BETWEEN CUTOFF FREQUENCY AT ZERO AND SIX VOLTS IN GAAS VARACTOR DIODES goo 800 700 600 N MA48700 Series V3.00 THEORETICAL EFFICIENCY OF X2 GAAS VARACTOR MULTIPLIERS 500 400 300 £ <0 £ , z ) f c' f o u t THEORETICAL EFFICIENCY OF X3 GAAS VARACTOR MULTIPLIERS THEORETICAL EFFICIENCY OF X4 GAAS VARACTOR MULTIPLIERS 10 f c/ fo u t 100 f c/ f o u t Specifications Subject , an A M P com pany GaAs Multiplier Varactors Features · · High Cutoff Frequency Operating Tem
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MA48700
gaas varactor diodes
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varactor diode capacitance measurement
Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
Text: . Relationship Between Cutoff Frequency at Zero and Six Volts in GaAs Varactor Diodes FIGURE 2. Varactor Diode , volts) versus Fqq (cutoff at 0 volts) performance curve. 3. All GaAs multiplier diodes are available in , 3. Theoretical Efficiency of x2 GaAs Varactor Multipliers fini INPUT X3 MULTIPLIER OUTPUT -0â , Varactor Multipliers vp à z til à ü u. ui 100 fc/fout FIGURE 5. Theoretical Efficiency of x4 GaAs , frequency (Fc) of varactor diodes . Among the most widely used methods are the reflection coefficient
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t-07-11
MA48700
varactor diode capacitance measurement
impatt diode
Gunn diode
GaAs Gunn Diode "94 GHz"
radar gunn diode
GaAs Gunn Diode
impatt
varactor diode high frequency GHz
Gunn Diode e band
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1998 - SMO0705V
Abstract: 2SK1645 SMO1137V gaas varactor diodes
Text: series of ultrahigh-frequency local oscillator modules, and Sanyo's GaAs varactor diodes to easily , GaAs MESFET or by providing a frequency amplifier for an oscillator that uses silicon transistors , systems. These modules combine the technology cultivated in Sanyo's low phase noise GaAs MESFET (the , the high-cost GaAs prescaler previously used for the ultrahigh-frequency signals, it can contribute to
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SMO1137V,
SMO0705V
SMO0705V
2SK1645
SMO1137V
gaas varactor diodes
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4800B
Abstract: circuit diagram of 4800b CIRCUIT 4800b max 4800b q 4800b paramp Parametric Varactor diodes DM 024 varactor diode q factor measurement 312C0
Text: Between Cutoff Frequency at Zero and Six Volts in GaAs Varactor Diodes . Cjv * Rsv Ls Vjf ~v H h , Fqq (cutoff at 0 volts). 3. All GaAs paramp diodes are available In any case style shown in this , performance. 8. All GaAs paramp diodes are subjected to a 48 hour 100°C electrical burn-in before final , frequency (Fq) of varactor diodes . Among the most widely used methods are the reflection coefficient , Microwave Measurement Technique to Characterize Diodes and an 800 Gc Cutoff Frequency Varactor at Zero Volts
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MA-48500
Sb42Em
D00DS3Ã
ga065
4800B
circuit diagram of 4800b
CIRCUIT 4800b
max 4800b
q 4800b
paramp
Parametric Varactor diodes
DM 024
varactor diode q factor measurement
312C0
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ely transformers
Abstract: No abstract text available
Text: covering 2 to 18 GHz (2-4, 4 -7 , 7 -1 2 , and 1 2 -1 8 HGz), w ith on-chip GaAs varactor diodes , was , FETs and GaAs PIN diodes . Some of these switch structures have been incorporated in monolithic X-band 4 , ) organization was created to produce Gallium Arsenide ( GaAs ) Monolithic M icrowave Integrated Circuits (M M ICs , GaAs M M ICs and components for military radar, electronic warfare, missile guidance, and , range of microwave circuits have been fabricated on GaAs at Tl. Both narrowband double-balanced and
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millimeter wave radar
Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
Text: Six Volts in GaAs Varactor Diodes Fc/Fo u r FIGURE 4. Theoretical Efficiency of x3 GaAs Varactor , Efficiency of x4 GaAs Varactor Multipliers Application Notes Many methods exist for measuring the quality factor or cutoff frequency (Fc) of varactor diodes . Among the most widely used methods are the reflection , Afacm MA48700 Series GaAs Multiplier Varactors Features HIGH CUTOFF FREQUENCY OPERATING , diodes may be used to double or triple the frequency outputs of Gunn or IMPATT oscillators in millimeter
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MA48700
millimeter wave radar
DIODE ED 92
GaAs Gunn Diode 24
GaAs impatt diode W band
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2015 - MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Varactor Performance Guide 15 Tuning Varactor Selector Guide 16 MMSM Varactor Diodes 17 GaAs Varactor Diodes 18 Gunn Diodes 19 Comb Generators 20 Surface Mount Limiter , ) (pF) 22 3.25 0.9-1.5 0.2-0.5 1500 17 GaAs Varactor Diodes Microsemiâs GaAs , effectively. PIN Diodes ⢠Microsemi has a wide variety of GaAs and Silicon PIN diodes to suit your , GC9944 CJ @ 0V (Typ) (pF) MS8001 (Ohms) 0.12 6 GaAs Schottky Barrier25ËC 6 Diodes
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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6953-B
Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Text: PIN GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning
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ML40464
ML40462
ML40461
ML4649-30
ML4650-30
ML4649-56
ML4650-56
6953-B
7812A
AH413
700201
CV2154
AH370
ML40150
DH 408 diode
dmf 612
14094 b
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Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
Abstract: varactor
Text: stack (HTRVS) [4] is a combined anti-series/anti-parallel topology of four hyperabrupt varactor diodes , . 2008. [10] C. Huang, et al., âA GaAs Junction Varactor with a Continuously Tunable Range of 9:1 and , the capacitive switch bank composed of N capacitive switches. (b) Schematic of the varactor , , Oregon, USA switch (Fig. 2). When using (multiple stacked) diodes or transistors for the switching , intuitively understood as follows. For a single varactor diode, increasing the tuning range for a constant
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889-A1,
17th-20th,
Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
varactor
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2010 - Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits
Abstract: varactor high power varactor
Text: /antiparallel configuration for HTRVS and WTSVS. B. Optimum Doping Profiles for Varactor Diodes In order to , tuning range of these varactor diodes is 9:1 with a maximum control voltage of 12 V [18]. Linearity , and the NTSVS, which both feature the Ndx-2 doping profile for their varactor diodes , have , becomes distorted. power up to 40 dBm while avoiding very high voltage swings over the varactor diodes , varactor diodes with an exponential C-VR relation is normalized as 0.0528 V-1 to maintain the same
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889-A1,
Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits
varactor high power
varactor
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1998 - varactor diode parameter
Abstract: ODS-1203 MA46H120
Text: GaAs Constant Gamma Flip-Chip Varactor Diode MA46H120 MA46H120 GaAs Constant Gamma FlipChip Varactor Diode Features · · · · · · Constant Gamma for Linear Tuning Low Parasitic Capacitance , place insertion. Bottom View Applications The MA46H120 hyperabrupt GaAs tuning varactor is , after installation. Static Sensitivity Varactor diodes are ESD sensitive and can be damaged by static , Layout TOP VIEW Description M/A-COM's MA46H120 is a gallium arsenide flip chip hyperabrupt varactor
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MA46H120
MA46H120
varactor diode parameter
ODS-1203
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Not Available
Abstract: No abstract text available
Text: 1TE D â 4bli3303 0 0 00 3 1 3 Beam Lead Varactor Diodes SECTION 4 MILLIMETER-WAVE DIODES HUGHES/ MICROWAVE PRDTS The Hughes model 47401H-0101 beam-lead varactor is a ; GaAs , or better. The structure consists of a 7 x 8 mil (0.18 x 0.20 ; mm) GaAs chip mounted in an integral beam-lead configuration that has a total length of 37 mil (0.94 mm). Varactor Schottky-barrier diodes work , . 3 With the beam-lead varactor , it is possible to build a planar microstrip VCO that is
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4bli3303
47401H-0101
47401H-0101
-2V/-20V,
47401H-0000
47406H-0000
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2002 - varactor flip chip
Abstract: MA46H146
Text: MA46H146 GaAs Flip-Chip Multiplier Varactor Diode Features n n n n n V 2.00 Chip , GaAs Flip-Chip Multiplier Varactor Diode MA4H6H146 V 2.00 Case Styles A F INCHES MAX , : Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 GaAs Flip-Chip Multiplier Varactor Diode , extended cure times, temperatures must be below 200 °C. Static Voltage Sensitivity Varactor diodes are , 595, Fax+44 (1344) 300 020 GaAs Flip-Chip Multiplier Varactor Diode MA4H6H146 V 2.00
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MA46H146
MA46H146
MA46H146-W
MA46H146-T
varactor flip chip
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GaAs Gunn Diode "94 GHz"
Abstract: varactor diode high frequency 2.4 GHZ Gunn Diode millimeter gunn diode D5008-18 D5256-06 D5244-06 D5244-12 Parametric Varactor diodes D5244-24
Text: ALPHA IN»/ SEMICONDUCTOR 46E D â 0SflSMM3 0001376 73T HALP T'ò"7-H GaAs Multiplier Diodes , varactor multiplier diodes using these high temperature ovens. The testing was carried out in the range , thinner gold plating. 4. Electrical leads are woven glass insulated. Tests performed on GaAs varactor , OOOlSflü 3=10 â ALP T-ol-H GaAs Multiplier Diodes for Millimeter Waves Electrical Characteristics , measurements are available and are utilized for characterizing low capacitance diodes . See GaAs Parametric
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A46H
Abstract: No abstract text available
Text: MA46H120 M/A-COM GaAs Constant Gamma FlipChip Varactor Diode Features · · · · · · Constant , . Bottom View Applications The M A 46H 120 hyperabrupt GaAs tuning varactor is designed for wide , of scrub should be required for attachment. Static Sensitivity Varactor diodes are ESD sensitive , Description M/A-COM's M A 46H 120 is a gallium arsenide flip chip hyperabrupt varactor diode. These devices , extremely low parasitics. The M A 46H 120 diodes are fully passivated with silicon nitride and have an
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MA46H120
A46H
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2010 - Diodes
Abstract: RF Diode Design Guide
Text: Division to become Skyworks), our product portfolio includes PIN, Schottky, varactor and limiter diodes , Wafers on Film Frame â GaAs Flip Chip Schottky Diodes â Chip On Board Schottky Diodes â Beam-Lead Schottky Diodes â Beamless Schottky Diodes â Epoxy Octo Ring Quad Schottky Diodes Varactor , diode product offering. High Quality Factor (Abrupt) Varactor Diodes â Plastic Surface Mount Technology (SMT) Abrupt Varactor Diodes â Hermetic Ceramic Abrupt Varactor Diodes â Abrupt Varactor
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eng508
BRO389-11B
Diodes
RF Diode Design Guide
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2008 - PN Junction Diode varactor
Abstract: varactor diode fm GaAs varactor diode Linearizer varactor diode notes FM tuning capacitor HYPERABRUPT tuning capacitors varactor diode datasheet varactor high power
Text: silicon diodes in fast VCO's and the high surface state density in GaAs results in significant long-term , arsenide diodes provide higher Q and may be used at higher microwave frequencies. Within the general , hyperabrupt diodes and were designed to produce a C-V variation that had, at least over a sometimes small , compared to abrupt junction design, with the result being that hyperabrupt diodes can be used only at , a state of the art Tuning Varactor using new techniques for producing computer controlled variable
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