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    gaas varactor diodes Datasheets Context Search

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    2008 - mv30007

    Abstract: gaas varactor diodes mv31026 MV30016 MV34004 MV34010 MV31011 MV31021 MV3000 "Varactor Diodes"
    Text: GaAs Varactor Diodes Hyperabrupt ® TM MV30011 ­ MV34010 Features High Q Values for , Page 2 GaAs Varactor Diodes Hyperabrupt ® TM MV30011 ­ MV34010 High Q Constant Gamma , Page 3 GaAs Varactor Diodes Hyperabrupt TM Copyright 2008 Rev: 2009-05-11 ® MV30011 ­ , hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at Microsemi by the Chemical , Varactor Diodes Hyperabrupt ® TM MV30011 ­ MV34010 High Q Constant Gamma Tuning Varactors


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    PDF MV30011 MV34010 ga010 mv30007 gaas varactor diodes mv31026 MV30016 MV34004 MV34010 MV31011 MV31021 MV3000 "Varactor Diodes"
    2008 - Not Available

    Abstract: No abstract text available
    Text: GaAs Varactor Diodes Hyperabrupt ® TM MV30011 – MV34010 Features High Q Values for , Applications Description VCOs Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated , , 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Varactor Diodes Hyperabrupt ® TM MV30011 – MV34010 , Page 2 GaAs Varactor Diodes Hyperabrupt ® TM MV30011 – MV34010 High Q Constant Gamma , : 978-937-3748 Page 3 GaAs Varactor Diodes Hyperabrupt TM Copyright  2008 Rev: 2009-05-11 Â


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    PDF MV30011 MV34010
    2008 - mv30007

    Abstract: mv31026 MV3101 mv30016 MV3100 MV31019 MV34010 MV31012 mv3102 MV3001
    Text: GaAs Varactor Diodes Hyperabrupt TM ® MV30011 ­ MV34010 Features High Q Values for , Applications Description Microsemi's GaAs hyperabrupt junction varactor diodes are fabricated from , Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Varactor Diodes , , 978-442-5600, Fax: 978-937-3748 Page 2 GaAs Varactor Diodes Hyperabrupt TM ® MV30011 ­ MV34010 , 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GaAs Varactor


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    PDF MV30011 MV34010 mv30007 mv31026 MV3101 mv30016 MV3100 MV31019 MV34010 MV31012 mv3102 MV3001
    2008 - MV21005

    Abstract: gaas varactor diodes Tuning Varactors MV20000
    Text: GaAs Varactor Diodes TM ® Abrupt Junction MV20001 ­ MV21010 Features High Q , GaAs Varactor Diodes TM ® Abrupt Junction MV20001 ­ MV21010 Specifications @ 25°C Gamma = , Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available Applications VCOs Phase-Locked Oscillators High Q Tunable Filters Phase Shifters Pre-Selectors Description Microsemi's GaAs , repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for


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    PDF MV20001 MV21010 MV21005 gaas varactor diodes Tuning Varactors MV20000
    2008 - Not Available

    Abstract: No abstract text available
    Text: GaAs Varactor Diodes Abrupt Junction ® TM MV20001 – MV21010 Features High Q Values , Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Varactor Diodes , Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available Applications VCOs Phase-Locked Oscillators Description High Q Tunable Filters Microsemi’s GaAs abrupt junction , tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for


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    PDF MV20001 MV21010 MV21006 MV21007 MV21008 MV21009
    2008 - gaas varactor diodes

    Abstract: MV2101 MV21004 MV20001
    Text: GaAs Varactor Diodes Abrupt Junction ® TM MV20001 ­ MV21010 Features High Q , GaAs Varactor Diodes Abrupt Junction ® TM MV20001 ­ MV21010 Specifications @ 25°C Gamma = , Available as Chip or Packaged Diodes Available in Chip-on-Board Packaging Custom Designs , Filters Phase Shifters Pre-Selectors Microsemi's GaAs abrupt junction varactors are , diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to


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    PDF MV20001 MV21010 varietMV21005 MV21006 MV21007 MV21008 MV21009 gaas varactor diodes MV2101 MV21004 MV20001
    millimeter wave radar

    Abstract: varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
    Text: GaAs Varactor Diodes FIGURE 4. Theoretical Efficiency of x3 GaAs Varactor Multipliers FIGURE 2. Varactor Diode Equivalent Circuit FIGURE 5. Theoretical Efficiency of x4 GaAs Varactor Multipliers FIGURE 3. Theoretical Efficiency of x2 GaAs Varactor Multipliers M/A-COM, Inc. 43 South Ave , (cutoff at 0 volts) performance curve. 3. All GaAs multiplier diodes are available in any case style shown , MA48700 Series GaAs Multiplier Varactors Features HIGH CUTOFF FREQUENCY OPERATING


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    PDF MA48700 and43 millimeter wave radar varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
    1996 - millimeter wave radar

    Abstract: varactor MA48700 MA48701E MA48702E MA48703E MA48704E MA48705E MA48706C MA48707C
    Text: AND SIX VOLTS IN GAAS VARACTOR DIODES THEORETICAL EFFICIENCY OF X2 GAAS VARACTOR MULTIPLIERS THEORETICAL EFFICIENCY OF X3 GAAS VARACTOR MULTIPLIERS THEORETICAL EFFICIENCY OF X4 GAAS VARACTOR , GaAs Multiplier Varactors MA48700 Series V3.00 Features q q Case Styles High Cutoff , . These diodes may be used to double or triple the frequency output of a phase locked source for , GaAs Multiplier Varactors V3.00 Electrical Specifications @ 25°C Model3 Number Minimum


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    PDF MA48700 millimeter wave radar varactor MA48701E MA48702E MA48703E MA48704E MA48705E MA48706C MA48707C
    gaas varactor diodes

    Abstract: No abstract text available
    Text: BETWEEN CUTOFF FREQUENCY AT ZERO AND SIX VOLTS IN GAAS VARACTOR DIODES goo 800 700 600 N MA48700 Series V3.00 THEORETICAL EFFICIENCY OF X2 GAAS VARACTOR MULTIPLIERS 500 400 300 £ <0 £ , z ) f c' f o u t THEORETICAL EFFICIENCY OF X3 GAAS VARACTOR MULTIPLIERS THEORETICAL EFFICIENCY OF X4 GAAS VARACTOR MULTIPLIERS 10 f c/ fo u t 100 f c/ f o u t Specifications Subject , an A M P com pany GaAs Multiplier Varactors Features · · High Cutoff Frequency Operating Tem


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    PDF MA48700 gaas varactor diodes
    varactor diode capacitance measurement

    Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
    Text: . Relationship Between Cutoff Frequency at Zero and Six Volts in GaAs Varactor Diodes FIGURE 2. Varactor Diode , volts) versus Fqq (cutoff at 0 volts) performance curve. 3. All GaAs multiplier diodes are available in , 3. Theoretical Efficiency of x2 GaAs Varactor Multipliers fini INPUT X3 MULTIPLIER OUTPUT -0— , Varactor Multipliers vp Ï z til Ö ü u. ui 100 fc/fout FIGURE 5. Theoretical Efficiency of x4 GaAs , frequency (Fc) of varactor diodes . Among the most widely used methods are the reflection coefficient


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    PDF t-07-11 MA48700 varactor diode capacitance measurement impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz Gunn Diode e band
    1998 - SMO0705V

    Abstract: 2SK1645 SMO1137V gaas varactor diodes
    Text: series of ultrahigh-frequency local oscillator modules, and Sanyo's GaAs varactor diodes to easily , GaAs MESFET or by providing a frequency amplifier for an oscillator that uses silicon transistors , systems. These modules combine the technology cultivated in Sanyo's low phase noise GaAs MESFET (the , the high-cost GaAs prescaler previously used for the ultrahigh-frequency signals, it can contribute to


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    PDF SMO1137V, SMO0705V SMO0705V 2SK1645 SMO1137V gaas varactor diodes
    4800B

    Abstract: circuit diagram of 4800b CIRCUIT 4800b max 4800b q 4800b paramp Parametric Varactor diodes DM 024 varactor diode q factor measurement 312C0
    Text: Between Cutoff Frequency at Zero and Six Volts in GaAs Varactor Diodes . Cjv * Rsv Ls Vjf ~v H h , Fqq (cutoff at 0 volts). 3. All GaAs paramp diodes are available In any case style shown in this , performance. 8. All GaAs paramp diodes are subjected to a 48 hour 100°C electrical burn-in before final , frequency (Fq) of varactor diodes . Among the most widely used methods are the reflection coefficient , Microwave Measurement Technique to Characterize Diodes and an 800 Gc Cutoff Frequency Varactor at Zero Volts


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    PDF MA-48500 Sb42Em D00DS3Ã ga065 4800B circuit diagram of 4800b CIRCUIT 4800b max 4800b q 4800b paramp Parametric Varactor diodes DM 024 varactor diode q factor measurement 312C0
    ely transformers

    Abstract: No abstract text available
    Text: covering 2 to 18 GHz (2-4, 4 -7 , 7 -1 2 , and 1 2 -1 8 HGz), w ith on-chip GaAs varactor diodes , was , FETs and GaAs PIN diodes . Some of these switch structures have been incorporated in monolithic X-band 4 , ) organization was created to produce Gallium Arsenide ( GaAs ) Monolithic M icrowave Integrated Circuits (M M ICs , GaAs M M ICs and components for military radar, electronic warfare, missile guidance, and , range of microwave circuits have been fabricated on GaAs at Tl. Both narrowband double-balanced and


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    millimeter wave radar

    Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
    Text: Six Volts in GaAs Varactor Diodes Fc/Fo u r FIGURE 4. Theoretical Efficiency of x3 GaAs Varactor , Efficiency of x4 GaAs Varactor Multipliers Application Notes Many methods exist for measuring the quality factor or cutoff frequency (Fc) of varactor diodes . Among the most widely used methods are the reflection , Afacm MA48700 Series GaAs Multiplier Varactors Features HIGH CUTOFF FREQUENCY OPERATING , diodes may be used to double or triple the frequency outputs of Gunn or IMPATT oscillators in millimeter


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    PDF MA48700 millimeter wave radar DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
    2015 - MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Varactor Performance Guide 15 Tuning Varactor Selector Guide 16 MMSM Varactor Diodes 17 GaAs Varactor Diodes 18 Gunn Diodes 19 Comb Generators 20 Surface Mount Limiter , ) (pF) 22 3.25 0.9-1.5 0.2-0.5 1500 17 GaAs Varactor Diodes Microsemi’s GaAs , effectively. PIN Diodes • Microsemi has a wide variety of GaAs and Silicon PIN diodes to suit your , GC9944 CJ @ 0V (Typ) (pF) MS8001 (Ohms) 0.12 6 GaAs Schottky Barrier25˚C 6 Diodes


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    PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30
    6953-B

    Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
    Text: PIN GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning Varactor GaAs Abrupt Junction Tuning


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    PDF ML40464 ML40462 ML40461 ML4649-30 ML4650-30 ML4649-56 ML4650-56 6953-B 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
    Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

    Abstract: varactor
    Text: stack (HTRVS) [4] is a combined anti-series/anti-parallel topology of four hyperabrupt varactor diodes , . 2008. [10] C. Huang, et al., “A GaAs Junction Varactor with a Continuously Tunable Range of 9:1 and , the capacitive switch bank composed of N capacitive switches. (b) Schematic of the varactor , , Oregon, USA switch (Fig. 2). When using (multiple stacked) diodes or transistors for the switching , intuitively understood as follows. For a single varactor diode, increasing the tuning range for a constant


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    PDF 889-A1, 17th-20th, Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity varactor
    2010 - Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits

    Abstract: varactor high power varactor
    Text: /antiparallel configuration for HTRVS and WTSVS. B. Optimum Doping Profiles for Varactor Diodes In order to , tuning range of these varactor diodes is 9:1 with a maximum control voltage of 12 V [18]. Linearity , and the NTSVS, which both feature the Ndx-2 doping profile for their varactor diodes , have , becomes distorted. power up to 40 dBm while avoiding very high voltage swings over the varactor diodes , varactor diodes with an exponential C-VR relation is normalized as 0.0528 V-1 to maintain the same


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    PDF 889-A1, Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits varactor high power varactor
    1998 - varactor diode parameter

    Abstract: ODS-1203 MA46H120
    Text: GaAs Constant Gamma Flip-Chip Varactor Diode MA46H120 MA46H120 GaAs Constant Gamma FlipChip Varactor Diode Features · · · · · · Constant Gamma for Linear Tuning Low Parasitic Capacitance , place insertion. Bottom View Applications The MA46H120 hyperabrupt GaAs tuning varactor is , after installation. Static Sensitivity Varactor diodes are ESD sensitive and can be damaged by static , Layout TOP VIEW Description M/A-COM's MA46H120 is a gallium arsenide flip chip hyperabrupt varactor


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    PDF MA46H120 MA46H120 varactor diode parameter ODS-1203
    Not Available

    Abstract: No abstract text available
    Text: 1TE D ■4bli3303 0 0 00 3 1 3 Beam Lead Varactor Diodes SECTION 4 MILLIMETER-WAVE DIODES HUGHES/ MICROWAVE PRDTS The Hughes model 47401H-0101 beam-lead varactor is a ; GaAs , or better. The structure consists of a 7 x 8 mil (0.18 x 0.20 ; mm) GaAs chip mounted in an integral beam-lead configuration that has a total length of 37 mil (0.94 mm). Varactor Schottky-barrier diodes work , . 3 With the beam-lead varactor , it is possible to build a planar microstrip VCO that is


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    PDF 4bli3303 47401H-0101 47401H-0101 -2V/-20V, 47401H-0000 47406H-0000
    2002 - varactor flip chip

    Abstract: MA46H146
    Text: MA46H146 GaAs Flip-Chip Multiplier Varactor Diode Features n n n n n V 2.00 Chip , GaAs Flip-Chip Multiplier Varactor Diode MA4H6H146 V 2.00 Case Styles A F INCHES MAX , : Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 GaAs Flip-Chip Multiplier Varactor Diode , extended cure times, temperatures must be below 200 °C. Static Voltage Sensitivity Varactor diodes are , 595, Fax+44 (1344) 300 020 GaAs Flip-Chip Multiplier Varactor Diode MA4H6H146 V 2.00


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    PDF MA46H146 MA46H146 MA46H146-W MA46H146-T varactor flip chip
    GaAs Gunn Diode "94 GHz"

    Abstract: varactor diode high frequency 2.4 GHZ Gunn Diode millimeter gunn diode D5008-18 D5256-06 D5244-06 D5244-12 Parametric Varactor diodes D5244-24
    Text: ALPHA IN»/ SEMICONDUCTOR 46E D ■0SflSMM3 0001376 73T HALP T'ò"7-H GaAs Multiplier Diodes , varactor multiplier diodes using these high temperature ovens. The testing was carried out in the range , thinner gold plating. 4. Electrical leads are woven glass insulated. Tests performed on GaAs varactor , OOOlSflü 3=10 ■ALP T-ol-H GaAs Multiplier Diodes for Millimeter Waves Electrical Characteristics , measurements are available and are utilized for characterizing low capacitance diodes . See GaAs Parametric


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    A46H

    Abstract: No abstract text available
    Text: MA46H120 M/A-COM GaAs Constant Gamma FlipChip Varactor Diode Features · · · · · · Constant , . Bottom View Applications The M A 46H 120 hyperabrupt GaAs tuning varactor is designed for wide , of scrub should be required for attachment. Static Sensitivity Varactor diodes are ESD sensitive , Description M/A-COM's M A 46H 120 is a gallium arsenide flip chip hyperabrupt varactor diode. These devices , extremely low parasitics. The M A 46H 120 diodes are fully passivated with silicon nitride and have an


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    PDF MA46H120 A46H
    2010 - Diodes

    Abstract: RF Diode Design Guide
    Text: Division to become Skyworks), our product portfolio includes PIN, Schottky, varactor and limiter diodes , Wafers on Film Frame ■GaAs Flip Chip Schottky Diodes ■Chip On Board Schottky Diodes ■Beam-Lead Schottky Diodes ■Beamless Schottky Diodes ■Epoxy Octo Ring Quad Schottky Diodes Varactor , diode product offering. High Quality Factor (Abrupt) Varactor Diodes ■Plastic Surface Mount Technology (SMT) Abrupt Varactor Diodes ■Hermetic Ceramic Abrupt Varactor Diodes ■Abrupt Varactor


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    PDF eng508 BRO389-11B Diodes RF Diode Design Guide
    2008 - PN Junction Diode varactor

    Abstract: varactor diode fm GaAs varactor diode Linearizer varactor diode notes FM tuning capacitor HYPERABRUPT tuning capacitors varactor diode datasheet varactor high power
    Text: silicon diodes in fast VCO's and the high surface state density in GaAs results in significant long-term , arsenide diodes provide higher Q and may be used at higher microwave frequencies. Within the general , hyperabrupt diodes and were designed to produce a C-V variation that had, at least over a sometimes small , compared to abrupt junction design, with the result being that hyperabrupt diodes can be used only at , a state of the art Tuning Varactor using new techniques for producing computer controlled variable


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