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Part Manufacturer Description Datasheet Download Buy Part
LT6300CGN#PBF Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LT6300IGN#TR Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT6300CGN#TRPBF Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LT6300IGN#TRPBF Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT6300IGN#PBF Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT6300CGN#TR Linear Technology LT6300 - 500mA, 200MHz xDSL Line Driver in 16-Lead SSOP Package; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C

gaas fet micro-X Package marking Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - rogers* RO4003C

Abstract: mgf1941 gaas fet micro-X Package marking MGF1941AL 137 marking Micro-X gaas fet micro-X Package gaas fet micro-X gaas fet marking J r338 GD-32
Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I , are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL , 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 < Power GaAs FET , /Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL


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PDF MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel rogers* RO4003C mgf1941 gaas fet micro-X Package marking 137 marking Micro-X gaas fet micro-X Package gaas fet micro-X gaas fet marking J r338 GD-32
2011 - gaas fet marking J

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , =0.508mm) < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1 , with sampling inspection. Gs/NFmin are not tested. 1 < Power GaAs FET > MGF1941AL Micro-X , 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.②±0.1 (GD-32) < Power GaAs FET > MGF1941AL , CURRENT ID(mA) Ta=25deg.C VDS=3V 90 < Power GaAs FET > MGF1941AL Micro-X type plastic


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PDF MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel gaas fet marking J
2011 - gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Text: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES , Publication Date : Apr., 2011 1 < Power GaAs FET > MGF1451A Micro-X ceramic package TYPICAL , < Power GaAs FET > MGF1451A Micro-X ceramic package S PARAMETERS (Conditions:VDS=3V,IDS=30mA,Ta , 17.7 17.2 16.9 14.9 14.0 13.5 12.7 11.7 11.4 11.0 10.8 10.7 10.5 10.4 10.2 9.4 GaAs FET Bottom view , interested, please contact our sales offices. Publication Date : Apr., 2011 3 < Power GaAs FET


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PDF MGF1451A MGF1451A 13dBm 12GHz gaas fet micro-X Package marking gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
b1415

Abstract: GAAS FET CROSS REFERENCE power fet 70 mil micro-X Package gaas fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 0.5w ,GaAs FET MIXER EMA EPA480C-SOT89
Text: package devices: For packaged discrete FET devices: Add a package model number to the end of chip device , For quick reference, the key design and typical microwave performance specifications and its package , hetero-junction power FETs, III.) low distortion GaAs power FETs, IV.) internally matched power FETs, and V , discrete FET products include super low noise and high gain hetero-junction FETs (EPB series), high efficiency hetero-junction power FETs (EPA series), and low distortion GaAs power FETs (EFA & EFC series).


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PDF RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE power fet 70 mil micro-X Package gaas fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 0.5w ,GaAs FET MIXER EMA EPA480C-SOT89
1996 - GaAs Amplifier Micro-X Marking k

Abstract: Silicon Bipolar Transistor MICRO-X LNA ku-band CLY27 CLY30 microwave fet IC SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking gaas fet micro-X Package GaAs Amplifier Micro-X "Marking k"
Text: Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 , Microwave Transistors 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of Transistor


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PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k Silicon Bipolar Transistor MICRO-X LNA ku-band CLY27 CLY30 microwave fet IC SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking gaas fet micro-X Package GaAs Amplifier Micro-X "Marking k"
1996 - GaAs Amplifier Micro-X Marking k

Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X CFY66 BFY193 BFY40 gaas fet micro-X Package BFY193 Microx BFY420 transistor "micro-x" "marking" 3
Text: Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 , Bipolar Microwave Transistors 4.3 HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave Ku-Band MESFETs 5 Package Outlines 5.1 Package Outlines of Diode Packages 5.2 Package Outlines of


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PDF HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k gaas fet micro-X Package marking GaAs Amplifier Micro-X CFY66 BFY193 BFY40 gaas fet micro-X Package BFY193 Microx BFY420 transistor "micro-x" "marking" 3
MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors GaAs Amplifier Micro-X transistor "micro-x" "marking" 3 micro-x 420 transistor C 5611 MMIC Amplifier Micro-X marking D "Microwave Diodes"
Text: GaAs Microwave C-Band MESFETs (Tj,max = 175 °C) Type Max. Ratings Characteristics Package , Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices 3 , 405, 420, 450 14 4.3 HiRel GaAs Microwave Devices 14 Low Noise/General Purpose GaAs Microwave C/Ku-Band MESFETs 14 Super Low Noise GaAs Microwave X/K-Band HEMTs CFY 67 15 Power


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PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors GaAs Amplifier Micro-X transistor "micro-x" "marking" 3 micro-x 420 transistor C 5611 MMIC Amplifier Micro-X marking D "Microwave Diodes"
SIEMENS MICROWAVE RADIO 8 GHz

Abstract: gaas fet micro-X Package marking x-band power transistor BAS70B-HP INFINEON PART MARKING gaas fet micro-X Package BFY193 Microx CGY40 MMIC Amplifier Micro-X marking D MSC Microwave
Text: Qualified Devices General Silicon Devices GaAs Devices 3 3 4 4 3. 3.1 3.2 3.3 Quality , Applications 12 12 12 4.2 Component Types Package Types HiRel Silicon Bipolar Transistors , HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs CFY25, 27 Low Noise GaAs Microwave K-Band HEMTs CFY 67 Power GaAs Microwave C-Band MESFETs CLY29, 32, 35, 38 Power GaAs Microwave X-Band MESFETs CLX27, 30, 32, 34 General Puprose GaAs MMIC L- and S- Band CGY41 14 14 14 15 15


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PDF MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking x-band power transistor BAS70B-HP INFINEON PART MARKING gaas fet micro-X Package BFY193 Microx CGY40 MMIC Amplifier Micro-X marking D MSC Microwave
1997 - gaas fet micro-X Package

Abstract: P1014 NE76184A-T1 t25000 gaas fet micro-X
Text: mold package for HJ-FET and GaAs MES FET with low cost and high performance so that the customers can , User's Manual TAPE AND REEL SPECIFICATION FOR MICRO-X PACKAGE AND MOLD PACKAGE (HJ-FET & GaAs MES FET ) Document No. P10149EJ6V0UM00 (6th edition) Date Published October 1997 N © 1989 , . ADAPTED AREA This specification covers standards on tape packaging micro-X GaAs MES FET , HJ-FET and on tape packaging mold GaAs MES FET , HJ-FET. 2-1. TAPE DIMENSIONS t J X G E H


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PDF P10149EJ6V0UM00 gaas fet micro-X Package P1014 NE76184A-T1 t25000 gaas fet micro-X
1999 - microwave transistor bfy193

Abstract: GaAs Amplifier Micro-X Marking k BFY193 Micro-X marking "Fp" micro-x 420 BXY42 CLX27 CLY29 HPAC140 LNA ku-band
Text: Devices General Silicon Devices GaAs Devices 3 3 4 4 3. 3.1 3.2 3.3 Quality , Applications 12 12 12 4.2 Component Types Package Types HiRel Silicon Bipolar Transistors , HiRel GaAs Microwave Devices General Purpose GaAs Microwave Ku-Band MESFETs Low Noise GaAs Microwave K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave X-Band MESFETs General Puprose GaAs MMIC L- and S- Band CFY25, 27 CFY 67 CLY29, 32, 35, 38 CLX27, 30, 32, 34 CGY41 14 14


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PDF MWP-25 MWP-35 microwave transistor bfy193 GaAs Amplifier Micro-X Marking k BFY193 Micro-X marking "Fp" micro-x 420 BXY42 CLX27 CLY29 HPAC140 LNA ku-band
gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Text: ?0í^nü!og¡«» Infineon GaAs Components HiRel Discretes and Microwave Semiconductors 11.1 , semiconductor devices for the microwave community. The device families include Silicon and GaAs electronic devices. In Silicon, microwave diodes (PIN and Schottky) and bipolar transistors are available. In GaAs , GaAs devices report our experience in HiRel parts and outline the range of components actually , fineon ! » c h n e i o g i e* GaAs Components HiRet Discretes and Microwave Semiconductors


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2003 - LNA ku-band

Abstract: ku-band pll lnb HSMS-2850 HSCH-9401 MGA-725M4 micro-X ceramic Package lna fet microwave transmitter 10GHz AT-64020 gaas fet 70 mil micro-X Package 900-1700MHz
Text: Product Selection Guides RFICs ( GaAs and Silicon) 15 Transistors ( FET and Bipolar) Diodes (PIN and , E-pHEMT FET , SOT343 E-pHEMT FET , SOT343 E-pHEMT FET , LPCC E-pHEMT MMIC, SOT343 GaAs MMIC, SOT363 GaAs , GaAs MMIC, SOT363 E-pHEMT FET , MiniPak E-pHEMT FET , SOT343 E-pHEMT FET , LPCC E-pHEMT FET , LPCC , MMIC, SOT363 GaAs MMIC, SOT363 GaAs MMIC, Bypass, SOT363 E-pHEMT FET , MiniPak E-pHEMT FET , SOT343 , GaAs MMIC, SOT363 E-pHEMT FET , MiniPak E-pHEMT FET , SOT343 E-pHEMT FET , LPCC E-pHEMT FET , LPCC


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PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb HSMS-2850 HSCH-9401 MGA-725M4 micro-X ceramic Package lna fet microwave transmitter 10GHz AT-64020 gaas fet 70 mil micro-X Package 900-1700MHz
1993 - mga64135

Abstract: 1 to 3 GHz bandpass filter wide band rfc 33 gaas fet micro-X Package Transistor 35 MICRO-X 64135 MGA-641 31883
Text: of two GaAs FET feedback amplifier stages. As noted, feedback techniques are used throughout , performance benefits in GaAs MMICs, the design of a GaAs FET feedback amplifier requires a slightly different , of high frequency gain. Therefore, obtaining a particular gain-bandwidth product in a GaAs FET , MGA-64135 GaAs MMIC Application Note G003 Introduction The Hewlett-Packard MGA-64135 GaAs MMIC , surface-mountcompatible package , and requires only a single-polarity power supply. The MGA-64135 combines the high


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PDF MGA-64135 085-inch 5091-7468E 5967-5922E mga64135 1 to 3 GHz bandpass filter wide band rfc 33 gaas fet micro-X Package Transistor 35 MICRO-X 64135 MGA-641 31883
1993 - ATF-35176

Abstract: ina10386 INA-10386 lnb downconverter schematic diagram ATF35176 ATF-35576 micro-X ceramic Package lna fet LNB down converter for Ku band AN-A008 ATF-3507
Text: gate of a GaAs FET as the frequency conversion element. HP has done some investigating of this approach , The most common device for Ku band oscillator use is an inexpensive GaAs FET . In general, a lower , ( GaAs ) is the appropriate technology for the LNA devices. While traditional MESFETs can provide adequate , number of noise performance selections, with the cost of the FET decreasing as the noise figure increases , FET . The higher electron mobility resulting from this technique raises the fT of the resulting


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PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5091-8819E 5968-3629E ATF-35176 ina10386 INA-10386 lnb downconverter schematic diagram ATF35176 ATF-35576 micro-X ceramic Package lna fet LNB down converter for Ku band AN-A008 ATF-3507
2011 - Micro-X marking "K"

Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v hemt low noise die GD-32 HEMT marking K HEMT marking G transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION , . Publication Date : Apr., 2011 1 GaAs HEMT> MGF4941CL Micro-X type plastic package , GaAs HEMT> MGF4941CL Micro-X type plastic package PRELIMINARY (Reference) Flow Item , Date : Apr., 2011 5 GaAs HEMT> MGF4941CL Micro-X type plastic package PRELIMINARY , indicated by the letter "G" after the Lot Marking . ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch


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PDF MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers Micro-X Marking v hemt low noise die GD-32 HEMT marking K HEMT marking G transistor "micro-x" "marking" 3
2011 - Not Available

Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL , GaAs HEMT> MGF4941CL Micro-X type plastic package S PARAMETERS (Ta=25C, VDS=1.5V, IDS , contact our sales offices. GaAs HEMT> MGF4941CL Micro-X type plastic package S , Micro-X type plastic package (Reference) GaAs HEMT> MGF4941CL Micro-X type plastic , Marking . ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Gate to source


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PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs
2010 - SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Text: package Low cost GaAs SPDT, performance guaranteed at 1.8 & 3.0 Volts Notes: 1. Under development , , ESD protection NE3508M04 GaAs FET : Transistor LNAs 0.4 dB NF, 14 dB Gain 4 4 4 4 4 4 4 4 , pin package GaAs RFIC Switches ­ Broadband to 6 GHz UPG2163T5N SPDT, Insertion Loss: 0.4 dB @ , Noise Figure, 16 dB Gain @ 2.5 GHz NE3508M04 GaAs HJ FET , super low 0.45 dB noise figure, 14 dB , P1dB (dBm) Package Application +13 TK SDARS, ISM GaAs RFIC Power Amplifiers for


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PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
1997 - ATF-10136

Abstract: ATF-10136-STR ATF-10136-TR1 36 Micro-X
Text: Ceramic Microstrip Package · Tape-and Reel Packaging Option Available [1] 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain , 0.5 ­ 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description , arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package . Its , may tarnish the leads of this package making it difficult to solder into a circuit. After a device


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PDF ATF-10136 ATF-10136 5965-8701E ATF-10136-STR ATF-10136-TR1 36 Micro-X
1997 - ATF-13336

Abstract: No abstract text available
Text: . This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns , 2 ­ 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features · Low Noise Figure , dBm Typical P1 dB at 12 GHz · Cost Effective Ceramic Microstrip Package · Tape-and-Reel Packaging , Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package . Its premium noise figure , micro-X Package Electrical Specifications, TA = 25°C Symbol NFO Parameters and Test Conditions Optimum


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PDF ATF-13336 ATF-13336 5965-8724E
Not Available

Abstract: No abstract text available
Text: GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain , Gallium Arsenide FET T-31-25 Features · Low Noise Figure 0.8 dB typical at 4 GHz · Low Bias V d s = , Pi dB at 4 GHz · Cost Effective Ceramic Microstrip Package Avantek micro-X Package .085 , transistor housed in a cost effective microstrip package . Its low noise figure makes this device appropriate , Gallium Arsenide FET Absolute Maximum Ratings Parameter Draln-Source Voltage Gate-Source Voltage Drain


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PDF ATF-10235 T-31-25
2011 - RO4350B ROGERS

Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL , GaAs HEMT> MGF4941CL Micro-X type plastic package Fig.1 3.2±0.1 (0.30) 2.6±0.1 , Date : Jul., 2012 2 (2.3) E GaAs HEMT> MGF4941CL Micro-X type plastic package , GaAs HEMT> MGF4941CL Micro-X type plastic package S PARAMETERS (Ta=25C, VDS=1.5V, VGS , . Publication Date : Jul., 2012 4 GaAs HEMT> MGF4941CL Micro-X type plastic package S


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PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs RO4350B ROGERS transistor "micro-x" "marking" 3 RO4350B max current GD-32 low noise Micro-X marking "K" RO4350B
Not Available

Abstract: No abstract text available
Text: Information GaAs MESFET for Opto-Receivers P35-1110 ' H . i i :-jiV -*j Performance , FET Receiver. • Transimpedance amplifier for wide band PIN FET Receiver. • High gm, typically , 3 WÊGV\ L Chip M ounting and Bonding P I 0 7 Package Outline The back of the chip is , Package Outline P 35-1 110-0 Chip Thickness 150 jam Recommended Bonding Configuration for P 35 , , Gardena, California 9 0 2 4 8 , USA. Owing to its small dimensions the microwave FET can be damaged or


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PDF P35-1110
gaas fet micro-X Package

Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator
Text: microstrip package . This device is designed for use in oscillator applications up to 25 GHz and general purpose amplifier applications in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 , Arsenide FET -T-3I-2S Features • High fMAx: 60 GHz typical • High Output Power: 18.0 dBm typical Pi , Package • Tape-and-Reel Packaging Option Available2 Description Avantek's ATF-26836 is a high , . Long leaded 35 micro-X package available upon request. 2. Refer to PACKAGING section "Tape-and-Reel


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PDF 114nbh Q00b503 ATF-26836 ATF-26836 pe093 CA95054 gaas fet micro-X Package ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator
AVANTEK transistor

Abstract: No abstract text available
Text: General Purpose Gallium Arsenide FET ' T 3 I X 5 Features · High fMAx: 60 GHz typical · High Output , Ceramic Microstrip Package · Tape-and-Reel Packaging Option Available2 Avantek 36 micro-X Package1 DIA , transistor housed in a cost effective microstrip package . This device is designed for use in oscillator applications up to 25 GHz and general purpose amplifier applications in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven


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PDF ATF-26836 AVANTEK transistor
2004 - MMIC Amplifier Micro-X marking D

Abstract: d marking "Micro-X" Micro-X Marking E GaAs Amplifier Micro-X Marking N amplifier marking _1 micro-X ceramic Package hemt D marking amplifier MMIC Amplifier Micro-X marking N d marking Micro-X marking gain stage GaAs MMIC AMPLIFIER
Text: . Package Style: Micro-X, 4-Pin, Ceramic GaAs MESFET Si CMOS Features R SiGe Bi-CMOS FO · , RF3818 Proposed 0 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 3GHz Typical , S R2 The RF3818 is a high-performance InGaP/ GaAs general purpose RF and microwave gain block , thermally efficient, industry standard, ceramic Micro-X package providing excellent ThetaJC performance. 0.200 sq. Typ Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT


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PDF RF3818 RF3818 RF3818SB RF3818SR 100-piece RF3818TR7 RF3818PCBA-410 MMIC Amplifier Micro-X marking D d marking "Micro-X" Micro-X Marking E GaAs Amplifier Micro-X Marking N amplifier marking _1 micro-X ceramic Package hemt D marking amplifier MMIC Amplifier Micro-X marking N d marking Micro-X marking gain stage GaAs MMIC AMPLIFIER
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