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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP
ISL6146BFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146EFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFUZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C

gaas fet marking J Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FMC141401-02

Abstract:
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B. CIRCUIT INSTALLATION 1) Screw


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2011 - rogers* RO4003C

Abstract:
Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL , < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I , 1.0 0 10 20 ID(mA) 30 40 50 0 Pin (dBm ) Publication Date : Mar., 2012 3 < Power GaAs FET , /Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL


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PDF MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel rogers* RO4003C mgf1941 gaas fet micro-X Package marking 137 marking Micro-X gaas fet micro-X Package gaas fet micro-X gaas fet marking J r338 GD-32
2011 - gaas fet marking J

Abstract:
Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power , with sampling inspection. Gs/NFmin are not tested. 1 < Power GaAs FET > MGF1941AL Micro-X , 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.②±0.1 (GD-32) < Power GaAs FET > MGF1941AL , CURRENT ID(mA) Ta=25deg.C VDS=3V 90 < Power GaAs FET > MGF1941AL Micro-X type plastic , =0.508mm) < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1


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PDF MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel gaas fet marking J
1998 - NEC TRANSISTOR MARKING CODE

Abstract:
Text: Silicon bipolar twin transistor NE×××18 GaAs FET , HJ-FET NE×××M01 GaAs FET , HJ-FET ICs µPC××××TB Silicon bipolar analog IC µPG×××TB GaAs IC 5 2. 2.1 SPECIFICATIONS TAPE DIMENSIONS t H A E J K0 K1 K C W B D D1 G F Length Unit: mm, Angle Unit: deg. ITEM SYMBOL SIZE Length 6 F 4.0±0.1 J 1.5 Pitch H , . 2.2 REEL DIMENSIONS AND MARKING


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PDF P10687EJ4V0IF00 us588-6130 NEC TRANSISTOR MARKING CODE LOT CODE NE NEC date code marking NEC mini mold transistor 25 hjfet code marking NEC nec lot number on packing label gaas fet marking J marking K gaas fet transistor 24
2005 - VNA-25 equivalent

Abstract:
Text: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves


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PDF VNA-25+ VNA-25 2002/95/EC) IPC/JEDECJ-STD-020C C/85RH VNA-25 equivalent 414 monolithic amplifier 5253 1007 mcl-25 rf VNA-25 6635 fet marking f25 marking K gaas fet MCL 25
2006 - nec mercury relay

Abstract:
Text: DATA SHEET Solid State Relay OCMOS FET PS7801J-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C×R 3pF · , 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801J-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side , output) 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET · Designed for AC/DC switching line , MARKING EXAMPLE Last number of type No. : 1J *1 1J Bar : Pb-Free N 603 No.1 pin mark


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PDF PS7801J-1A PS7801J-1A PS72xx nec mercury relay diode marking BDE on semiconductor PS7801J-1A-F3 PS7801J-1A-F4
NEC Ga FET marking L

Abstract:
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion , fields, because this device is MES FET with GaAs shottky barrier gate. 5 NE76184B Caution The , NE76184B-T1A MARKING 1.78 ±0.2 ORDERING INFORMATION Tape & reel 5000 pcs./reel 1.0 ±0.2 0.5 , . at f = 4 GHz 2 J J 4 0.4 MAX. 3 1.0 ±0.2 VDS VGSO VGDO ID Ptot Tch Tstg


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PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A NEC Ga FET marking L marking K gaas fet nec gaas fet marking NEC Ga FET marking V NEC Ga FET marking Rf NEC Ga FET marking A NEC Ga FET "marking V" NEC Ga FET nec 9000
fet dual gate sot143

Abstract:
Text: SONY. SGM2014M GaAs N-channel Dual Gate MES FET _ i-or the availability or this product, please contact the saies officéï| Description The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV , , mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor , mW Marking Sony reserves the right to change products and specifications without prior notice. This


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PDF SGM2014M SGM2014M 900MHz Ga-18dB OT-143 -64l0Â fet dual gate sot143
Sony 104A

Abstract:
Text: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is , amplifier, mixer and oscillator M-254 2 d : Dra ¡ n Structure GaAs N-channel field-effect , V g2s Id 55 Tch 150 Tstg -55 to +150 Pd 150 V V V mA •c e C mW Marking Sony , ) Îo - Drain current u b î\ O j o O (mA) m w W 0 5Í 3 Id VS


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PDF SGM2014M] SGM2014M 900MHz at900MHz OT-143 M-254 Sony 104A
2003 - FLU10

Abstract:
Text: FLU10ZM L-Band Medium & High Power GaAs FET S-PARAMETER +50 j 10 25 50 +10j 1.0 +2 50j , FLU10ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High , FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power , Power GaAs FET OUTPUT POWER & DRAIN CURRENT vs. INPUT POWER with a wide band tuning condition. @ VDS =


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PDF FLU10ZM FLU10ZM FCSI0202M200 FLU10 fujitsu flu fujitsu gaas fet L-band pae100
LTC1429

Abstract:
Text: ±5%. a p p l ic a t io n s ■GaAs FET Bias Generators ■Negative Supply Generators â , Part Count, Negative -4.1V Generator -4.1V Output GaAs FET Bias Generator ± U n “ T " 47iiF , flppucnnons ImVp.p Ripple, -4.1V Output GaAs FET Bias Generator SHDN SENSE VCC CPouT C2 0n , C GaAs NSMIT TRANSMITTER - J T Dimension in inches (millimeters) unless otherwise noted , Final Electrical Specifications r jr w im J k v / LTC1550/LTC1551 Low Noise, S w


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PDF LTC1550/LTC1551 900kHz 1550/LTC1551 5518Mbfl 1550/LTC 100mA LTC1261 LTC1429 LTC1429
Not Available

Abstract:
Text: reflective FET MMIC switch. This switch consists of a GaAs SP2T chip with integral driver. It is ideal for , GaAs 1C SP2T Reflective Switch With Integral Driver DC-2 GHz Features Integral Driver ± 5 V , Specifications subject to change without notice. 3/99A GaAs 1C SP2T Reflective Switch With Integral Driver DC , . Frequency Truth Table Control Logic V ctrl Absolute Maximum Ratings Condition J 1 to J2 Insertion , 0.395 (10.03 mm) 0.355 (9.02 mm) SQ. 0.088 (2.24 m m )' 90TYP. S: 0.200 j - (5.08 m m )- J


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PDF AN002R2-29, AN002R2-53 AN002R2-29 AN002R2-53 90TYP. 3/99A
2001 - date code marking NEC

Abstract:
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , -1A PACKAGE DIMENSIONS (UNIT: mm) 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET , 0.25 M 0.5±0.3 MARKING EXAMPLE 200H 001 No.1 pin Mark *1 Applicable type numbers are


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PDF PS7200H-1A PS7200H-1A date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a LOT CODE NEC marking E3 gaas fet Nec AC 160
2003 - fujitsu flu

Abstract:
Text: ] 25 FLU35ZM L-Band Medium & High Power GaAs FET S-PARAMETER +90° +50 j +2 5j +100 j 10 , FLU35ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm(typ.) High , FLU35ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU35ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE OUTPUT POWER , 0.77 156.46 0.78 151.30 S 12 S 21 FLU35ZM L-Band Medium & High Power GaAs FET OUTPUT POWER


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PDF FLU35ZM FLU35ZM FCSI0202M200 fujitsu flu fujitsu gaas fet L-band
fujitsu gaas fet

Abstract:
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm (Typ.) â , DESCRIPTION The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a , . Edition 1.2 July 1999 G.C.P.: Gain Compression Point FUJITSU FSU01LG General Purpose GaAs FET POWER , = 10 20 30 40 Drain-Source Current (mA) Fujfrsu FSU01LG General Purpose GaAs FET -o— s 21 12 , .687 -50.3 22.9 .681 -52.8 20.9 .674 -55.3 19.4 .668 -58.0 FUJITSU FSU01LG General Purpose GaAs FET


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PDF FSU01LG 190dB 12GHz FSU01LG FCSI0598M200 fujitsu gaas fet
1992 - body contact FET soi RF switch

Abstract:
Text: Pulsed Neutron and Flash X-ray Radiation Effects in GaAs MMICs," W. T. Anderson, R. C. Harrison, J . Gerdes, J . M. Beall, and J.A. Roussos, 1988 GaAs IC Symposium. "Circuit Response of GaAs MMICs and Bias , Conference. "Neutron Radiation Effects in GaAs MMICs and FETs," W. T. Anderson, J . K. Callahan, and J , discussed below in detail. Amplifier Biasing For reliable operation of TQS GaAs FET amplifiers, VDS , . 2. Set the positive supply voltage to 0. Switch Biasing For reliable operation of TQS GaAs FET


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2004 - ED-4701

Abstract:
Text: ] 25 FLU35ZM L-Band Medium & High Power GaAs FET S-PARAMETER +90° +50 j +2 5j +100 j 10 , FLU35ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm(typ , The FLU35ZM is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency , -111A (C=100pF, R=1.5k) Edition 1.2 Jan 2004 1 o FLU35ZM L-Band Medium & High Power GaAs FET , 0.74 162.05 0.77 156.46 0.78 151.30 S 12 S 21 FLU35ZM L-Band Medium & High Power GaAs FET


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PDF FLU35ZM FLU35ZM ED-4701 high power FET transistor s-parameters High Power GaAs FET
AE002M2-29

Abstract:
Text:  GaAs IC SP2T Non-Reflective Switch With Driver 20 MHz-2 GHz EB Alpha AE002M2-29, AE002M2 , of Meeting MIL-STD Requirements4 Description The AE002M2-29 is a SP2T non-reflective FET MMIC switch. This switch consists of a GaAs SP2T chip and a silicon CMOS driver. It operates with 5 V bias and , subject to change without notice. 3/99A 1 GaAs IC SP2T Non-Reflective Switch With Driver 20 MHz-2 GHz , voltage. ■53 0.088 (2.24 mm)- 0.395 (10.03 mm) 0.355 (9.02 mm) SQ. m 0.200 j - (5.08 mm)-i _ J â


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PDF AE002M2-29, AE002M2-53 AE002M2-29 AE002M2-53 3/99A gaas fet marking a
Not Available

Abstract:
Text: non-reflective FET MMIC switch. This switch consists of a GaAs SP2T chip and a silicon CMOS driver. It operates , GaAs 1C SP2T Non-Reflective Switch With Driver 20 MHz-2 GHz Features Single 5 V Supply Voltage , · www.alphaind.com Specifications subject to change without notice. 3/99A GaAs 1C SP2T , Loss Isolation Condition J i to J3 Isolation Insertion Loss Absolute Maximum Ratings Characteristic , Storage Temperature (T st ) Thermal Resistance (0 j C) Do not allow control voltage to exceed bias


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PDF AE002M2-29, AE002M2-53 AE002M2-29 AE002M2-53 3/99A
2004 - Not Available

Abstract:
Text: Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This , High Power GaAs FET POWER DERATING CURVE 8 7 To tal Po we r Dissip atio n [W] 6 5 4 3 2 1 0 0 50 , ow e r Adde d Efficie ncy [%] 30 80 FLU10ZM L-Band Medium & High Power GaAs FET , Medium & High Power GaAs FET OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER with Wide band tuning


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PDF FLU10ZM FLU10ZM
s18a

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC38V5867 5.8-6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC38V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees , < GaAs FET > MGFC38V5867 5.8 - 6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta , 7.0 <5G 30 20 ■j Ves™ 10V lSA 5QH2 / 1 *bdd i / | -, '/' ] J * | J ' | | 50 15 30


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PDF MGFC38V5867 75GHz MGFC38V5867 38dBm 25deg s18a 675g
NEC Ga FET marking Rf

Abstract:
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. PACKAGE DIMENSIONS (Unit: mm , reel 5000 pcs./reel MARKING J ABSO LUTE MAXIMUM RATINGS (T a = 25 °C) Drain to Source Voltage Gate , ". PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky


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PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A IR30-00 NEC Ga FET marking Rf nec gaas fet marking
2003 - marking code C1E SMD Transistor

Abstract:
Text: .45 7.2 Power GaAs FET , GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES FET .48 8.6 GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET


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PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 smd transistor g1-L NE3210SO1 smd code marking C1E
MGFC47V5864

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially , Power GaAs FET MGFC47V5864 Nov-03 Freqency vs GLP Freqency vs P1dB 10.5 10.0 E m S- CL O 9.5 , . C-band 50W Power GaAs FET MGFC47V5864 Nov-03 OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER , ) MITSUBISHI ELECTRIC CORP. HIGH FREQUENCY & OPTICAL SEMICONDUCTOR DIV. C-band 50W Power GaAs FET MGFC47V5864


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PDF MGFC47V5864 MGFC47V5864 47dBm mitsubishi optical transmitter
JD 1803

Abstract:
Text: , as a rule of thumb, gain of a GaAs FET amplifier stage varies at a rate of approximately 0.015 dB/°C , STRUCTURES J . A. Brandao Faria MICROWAVE DEVICES, CIRCUITS AND THEIR INTERACTIONS Charles A. Lee and G , range. Gallium arsenide ( GaAs ) integrated-circuit (IC) technology became commercially available abundantly as a foundry process since the early 1980s. Most of the ICs using GaAs technology, were previously , growth in mobile and wireless communications has led to expanded GaAs technology development and its new


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