The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TPS9103PWLE Texas Instruments Integrated GaAs Power Supply And Protection 20-TSSOP
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146AFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146DFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C

gaas fet marking B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting the FET in a circuit, the circuit gate and drain connections should be shorted to ground. 3) When soldering the FET leads, an iron with a grounded tip is required. B . CIRCUIT INSTALLATION 1) Screw , APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User


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XMFP1-M3

Abstract: D 8243 HC E176 e170315 OF FET E176 E176 field effect transistor FET E119 mc34063 step down external transistor E176 fet 28428
Text: Marking A : Part No. B : Lot No. 2.9 A Bk (2) 1.9 B 0.8 0.8 0.3 (1) (3 , (3): Source (4): Drain Marking A : Part No. B : Lot No. (in mm) 1 cABSOLUTE MAXIMUM , 1.0 B 0.5 A 1.5 1.5 Marking Pin (1):Gate A :Part No. (2):Source B :Lot No. Plastic with Heat Sink (3):Drain Marking Pin (1):Gate A:Part No. (2):Source B :Lot No. Plastic , Ck 2.5 B 1.0 A 0.5 4.5 2.1 Marking Pin (1):Gate A:Part No. (2):Source B :Lot


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PDF Rating3-5698410 XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 E176 field effect transistor FET E119 mc34063 step down external transistor E176 fet 28428
NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B NE272 mmic amplifier marking code N5 FET marking code .N5 NE23383B ne29200 NE292 gaas fet marking a
Text: Microelectronics GET-30484 Internal Visual Inspection (Low Noise GaAs FET ) GET-30447 Internal Visual Inspection , GaAs FET Examination or Test MH-STD-750 METHOD Condition Reliability Grade GRADEL Internal , , Kanagawa, 211-8666 Specification Control Drawing of Grade L GaAs Devices for Satellite Applications , Design and Construction 3.4 Performance 3.5 Package Outline 3.6 Chip Drawing 3.7 Marking (Packaged , Submittal 5.0 Preparation for Delivery 5.1 Packaging 5.2 Marking GET-30749, Rev.C, Page 3 of 22


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PDF GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B NE272 mmic amplifier marking code N5 FET marking code .N5 NE23383B ne29200 NE292 gaas fet marking a
gaas fet marking B

Abstract: FET GAAS marking a PS720C
Text: Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS , 2009 NS PS720C-1A PACKAGE DIMENSIONS (UNIT: mm) MARKING EXAMPLE (LASER MARKING ) PHOTOCOUPLER , Current MOS FET Isolation Voltage *1 *3 *1 PW = 100 s, Duty Cycle = 1% *2 PW = 100 ms, 1


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PDF PS720C-1A PS720C-1A gaas fet marking B FET GAAS marking a PS720C
2015 - Not Available

Abstract: No abstract text available
Text: negative voltage to bias the gate of GaAs FET , and internally provides protection circuit that can protect the FET devices during supply voltage transient. So it is very popular in satellite receiver front end block.  FEATURES * Built in FET device protection circuit * Adjustable FET device , UNISONIC TECHNOLOGIES CO., LTD L8001 Preliminary CMOS IC FET BIAS CONTROLLER ï , . It provides stable drain and gate bias conditions for GaAs or HEMT FETs. The UTC L8001, provide six


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PDF L8001 L8001 L8001, QW-R502-938
2003 - marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
Text: .45 7.2 Power GaAs FET , GaAs MMIC, GaAs MCM , .47 8.4 GaAs MES FET Hermitical Package .48 8.5 GaAs MES FET .48 8.6 GaAs MES FET Chip .48 8.7 UHF Dual Gate GaAs MES FET


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PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
NO2-B1

Abstract: No abstract text available
Text: Solid State Relay OCMOS FET PS7802B-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R (6.3 pF · ) 1-ch Optical Coupled MOS FET DESCRIPTION The PS7802B-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side. An ultra small , . MOS FET 4. MOS FET APPLICATIONS · Measurement equipment 1 2 Document No. PN10725EJ01V0DS (1st , +0.3 ­0.4 0.4±0.1 1.27 0.2±0.1 MARKING EXAMPLE 2B N 801 No.1 pin mark (Nicked corner


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PDF PS7802B-1A PS7802B-1A PS72xx NO2-B1
1998 - NEC Relay Date Codes

Abstract: FET marking codes NEC MARKING codes nec gaas fet marking
Text: DATA SHEET Solid State Relay OCMOS FET PS7241-2B 8-PIN SOP, 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 2-ch Optical Coupled MOS FET DESCRIPTION The PS7241-2B is a solid state relay containing GaAs LEDs on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the , . FEATURES · 2 channel type (1 b + 1 b output) · Low LED operating current (IF = 2 mA) · Designed for AC/DC , FET 6. MOS FET 7. MOS FET 8. MOS FET 1 2 3 7.0±0.3 4.4 4 2.05+0.08 ­0.05 0.15+0.10


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PDF PS7241-2B PS7241-2B PS7241-2B-F3, E72422 NEC Relay Date Codes FET marking codes NEC MARKING codes nec gaas fet marking
2001 - UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: .56 Power GaAs FET , GaAs MMIC, GaAs MCM , ) .59 GaAs MES FET , .60 GaAs MES FET Chip .60 GaAs MES FET .60 UHF Dual Gate GaAs MES FET


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PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
2005 - VNA-25 equivalent

Abstract: 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
Text: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features · 0.5 ­ 2.5 , stages with internal DC blocking capacitors at input and output. They are fabricated using GaAs FET , Design" to reduce ground path inductance for best performance. 1 Monolithic GaAs FET MMIC , mA/°C mA/V °C/W >1.5 2 Monolithic GaAs FET MMIC Amplifier Electrical Specifications at 25 , Operating Current 45 75 mA 3 Monolithic GaAs FET MMIC Amplifier Typical Performance Curves


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PDF VNA-25+ VNA-25 2002/95/EC) IPC/JEDECJ-STD-020C C/85RH VNA-25 equivalent 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
2001 - date code marking NEC

Abstract: code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a gaas fet marking C LOT CODE NEC Nec AC 160
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , -1A PACKAGE DIMENSIONS (UNIT: mm) 4.0±0.5 TOP VIEW 4 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET , 0.25 M 0.5±0.3 MARKING EXAMPLE 200H 001 No.1 pin Mark *1 Applicable type numbers are


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PDF PS7200H-1A PS7200H-1A date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a gaas fet marking C LOT CODE NEC Nec AC 160
2009 - Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT -NEPOC 1-ch Optical Coupled MOS FET DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input , PIN CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET APPLICATIONS · , 0.15+0.10 ­0.05 2.05+0.08 ­0.05 0.05+0.08 ­0.05 2.54 0.40+0.10 ­0.05 0.25 M 0.5±0.3 MARKING


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PDF PS720C-1A PS720C-1A
2006 - P0110009P

Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
Text: P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Features Functional Diagram , of devices GaAs Power FET 1000 KP029J · Wireless communication system · Cellular, PCS , Units P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Typical Characteristics , Technical Note 2W GaAs Power FET (Pb-Free Type) 90 3.0 45 4.0 1.2GHz 2.0 S21 4.0 , P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) Ids=400mA Ids=350mA 80 80 60


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PDF P0120009P 48dBm OT-89 P0120009P P0110009P Susumu RL series part Marking KP029J RR0816 marking c7 sot-89
2006 - P0110003P

Abstract: P0120003P ISO-14001 KP023J RR0816 GaAS fet sot89
Text: P0120003P Technical Note 800mW GaAs Power FET (Pb-Free Type) Features Functional Diagram , of devices GaAs Power FET 1000 KP023J ·Wireless communication system ·Cellular, PCS, PHS , Site : www.eudyna.com Units P0120003P Technical Note 800mW GaAs Power FET (Pb-Free Type , Web Site : www.eudyna.com P0120003P Technical Note 800mW GaAs Power FET (Pb-Free Type) 90 , 2006-11 Web Site : www.eudyna.com P0120003P Technical Note 800mW GaAs Power FET (Pb-Free Type


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PDF P0120003P 800mW 43dBm OT-89 P0120003P P0110003P ISO-14001 KP023J RR0816 GaAS fet sot89
1998 - LOT CODE NE NEC

Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC code marking NEC nec lot number on packing label hjfet mini mold transistor 25 C2H marking NEC PART NUMBER MARKING marking K gaas fet
Text: Silicon bipolar twin transistor NE×××18 GaAs FET , HJ-FET NE×××M01 GaAs FET , HJ-FET ICs µPC××××TB Silicon bipolar analog IC µPG×××TB GaAs IC 5 2. 2.1 SPECIFICATIONS TAPE DIMENSIONS t H A E J K0 K1 K C W B D D1 G F Length Unit: mm , AND MARKING 1 A C B 2 TYPE CLASS label W Length Unit: mm, Angle Unit: deg , . 2.2 REEL DIMENSIONS AND MARKING


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PDF P10687EJ4V0IF00 us588-6130 LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC code marking NEC nec lot number on packing label hjfet mini mold transistor 25 C2H marking NEC PART NUMBER MARKING marking K gaas fet
nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
Text: ) GaAs Device products HJ-FETs (Hetero Junction FET ) Discretes FETs MES FETs Power FETs , covers "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and "Microwave GaAs Devices". Caution GaAs Products This product uses gallium arsenide ( GaAs ). GaAs vapor and powder are , . 36 3.2.4 Low Noise GaAs FETs, HBTs, HJ-FETs , ). 55 6. MARKING /PART NUMBER


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PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
1998 - FSC60ML

Abstract: FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817
Text: FSC60ML General Purpose GaAs FET FEATURES · Low Noise Figure: NF=0.8dB (Typ.) @ f=4GHz · High , . DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate that is well suited for GPS , dB dB dB dB Edition 1.1 July 1999 1 FSC60ML General Purpose GaAs FET DRAIN CURRENT vs , ) 2 FSC60ML General Purpose GaAs FET +j50 +j100 +j25 S11 S22 +90¡ S21 S12 +j250 +j10 0.9 0.5 , Purpose GaAs FET Case Style "ML" 1.9±0.2 (0.075) 0.4 +0.1 ­0.05 (0.016) 0.4 +0.1 ­0.05 (0.016) 5


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PDF FSC60ML FSC60ML FCSI0598M200 FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817
2011 - Not Available

Abstract: No abstract text available
Text: . PS7901D-1A -NEPOC Series- (OCMOS FET ) 4-PIN SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (0.75 pF) 1-ch Optical Coupled MOS FET R08DS0034EJ0001 Rev.0.01 Feb 17, 2011 DESCRIPTION The PS7901D-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and , PIN CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET 1 2 , Title PACKAGE DIMENSIONS (UNIT: mm) 2.3±0.2 0.2 3.0 MAX. 0.4 1.27 MARKING EXAMPLE R


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PDF PS7901D-1A R08DS0034EJ0001 PS7901D-1A PS78xx
2006 - F31Z

Abstract: SPF-3143Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143
Text: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS , -3143Z is a high performance 0.5m pHEMT Gallium Arsenide FET . This 600m device is ideally biased at 3V, 20mA , applications. +17.7dBm P1dB (5V,40mA) Low Current, Low Cost SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT , ) Specification Typ. Applications Fixed Wireless, Pager Systems W GaAs MESFET 40 35 30 25 20 15 10 5 0 NE GaAs HBT Typical Gain Performance Gain, Gmax (dB) Optimum Technology


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PDF SPF-3143Z OT-343 31dBm SPF-3143Z DS091103 F31Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143
2013 - HMC216MS8

Abstract: No abstract text available
Text: HMC216MS8 / 216MS8E v02.0705 OBSOLETE PRODUCT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - , apps@hittite.com OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz MxN Spurious Outputs nLO mRF , / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Evaluation Circuit Board , Functional Diagram General Description The HMC216MS8 & HMC216MS8E are ultra miniature double-balanced FET


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PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8
2011 - Not Available

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , =12GHz, Pin=-5dBm Note: P1B and Glp are tested with sampling inspection. 1 < Power GaAs FET , ¼š Gate 解 Source 回 Drain < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , VOLTAGE VGS(V) 0.0 < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS (VDS , interested, please contact our sales offices. < Power GaAs FET > MGF1952A Leadless ceramic package


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PDF MGF1952A MGF1952A 17dBm 12GHz 000pcs/reel
2010 - FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic PC8230TU PG2163T5N sot-23 g6g 2SC3357/NE85634 marking code C1H mmic
Text: Circuits 5 (2) GaAs Device products HJ-FETs (Hetero Junction FET ) Discretes FETs MES , "Silicon Microwave Transistors", "Silicon Microwave Monolithic ICs" and "Microwave GaAs Devices". Caution GaAs Products This product uses gallium arsenide ( GaAs ). GaAs vapor and powder are hazardous to , . 34 3.2.4 Low Noise GaAs FETs, HBTs, HJ-FETs , ). 53 6. MARKING /PART NUMBER


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PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic PC8230TU PG2163T5N sot-23 g6g 2SC3357/NE85634 marking code C1H mmic
2006 - H216

Abstract: HMC216MS8 gaas fet marking a marking c gaas fet 216MS8E HMC216MS8E
Text: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical , On-line at www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , www.hittite.com HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz


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PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8 H216 gaas fet marking a marking c gaas fet 216MS8E
2008 - h216

Abstract: HMC216MS8E HMC216MS8 gaas fet marking a 216MS8E gaas fet marking C gaas fet marking
Text: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Conversion Loss vs Temperature , .0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = , www.hittite.com 9 - 95 HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 , v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Notes: MIXERS - DBL-BAL -


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PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8 h216 gaas fet marking a 216MS8E gaas fet marking C gaas fet marking
2005 - Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801E-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C × R, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output , CONNECTION (Top View) 3 1. LED Anode 2. LED Cathode 3. MOS FET 4. MOS FET APPLICATIONS · Measurement , +0.1 ­0.05 4.6±0.2 3.6 +0.3 ­0.4 0.4±0.1 1.27 0.2±0.1 MARKING EXAMPLE 1E N 503 No


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PDF PS7801E-1A PS7801E-1A PS72xx
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