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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

gaas fet gm Datasheets Context Search

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2003 - NE800296

Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Text: the transconductance, gm , in a GaAs FET is not usually large enough, the equation S11 = S22 = 0 will , feasible gallium arsenide field effect transistor ( GaAs FET ) appeared, and the uses of this device are , , communications and applied microwave systems, the GaAs FET has become an indispensable item. 1. THE FIELD , new device, known as the Gallium Arsenide Metal Semiconductor FET ( GaAs MESFET) showed performance , appearance of the contemporary GaAs FET contributed greatly to developing and commercializing the GUNN diode


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PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
1996 - NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Text: obtained by using expression (13). Since the transconductance, gm , in a GaAs FET is not usually large , feasible gallium arsenide field effect transistor ( GaAs FET ) appeared, and the uses of this device are , , communications and applied microwave systems, the GaAs FET has become an indispensable item. 1. THE FIELD , new device, known as the Gallium Arsenide Metal Semiconductor FET ( GaAs MESFET) showed performance , appearance of the contemporary GaAs FET contributed greatly to developing and commercializing the GUNN diode


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PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
1999 - high power FET transistor s-parameters

Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , A. What is a GaAs FET ? . B , Microwave Performance . E. Why a GaAs FET Instead of a GaAs Bipolar or Silicon Transistor , terms commonly used in Agilent Technologies GaAs FET data sheets, advertisements and other technical , . GaAs : Gallium Arsenide. A semiconductor compound. FET : Field Effect Transistor. A type of transistor


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PDF ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
1997 - high frequency transistor ga as fet

Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , GaAs FET ? . B. Active Layer , . D. FET Elements that Affect Microwave Performance . E. Why a GaAs FET Instead of a , GaAs FET data sheets, advertisements and other technical communications. Some of these terms are , application of a varying electric field. V. VI. VII. 2 GaAs FET : A field effect transistor made


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PDF ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
X band attenuator

Abstract: 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052
Text: FET Receiver ■Transimpedance Amplifier For Wide Band PIN FET Receiver ■High Gm , Typically 45 , , Typically 0.4 pF ■Simplified Bonding MODEL NO. p35-1110 GaAs MESFET For OPTO Receivers GATE 15 , RI 4.9 Q Cdg 0.038 PF Gm 46 mS Rds 401 a Cds 0.08 pF Rdg 7.8 CI Rs 4.5 CÌ Rd 4.36 a Ls 0.065 , MICROWAVE FET CAN BE DAMAGED OR DESTROYED IF SUBJECT TO LARGE TRANSIENT VOLTAGES. SUCH TRANSIENTS CAN BE , PINCHOFF VOLTAGE, Vp -05 1.0 -4.0 V Vds = 3 V, Ifls = 100 |A TtiANSCONDUCTANCE, Gm 40 45 50 mS Vds = 3 V


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PDF 0001fl3D p35-1110 DS0990 DA0769 DA0996 X band attenuator 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052
2000 - IMCS 700

Abstract: Ablebond 71-1 TC729 Traveling Wave Amplifier 273th Ta2N TC724
Text: process. This TWA is composed of seven FET cascode stages on a 2980 × 770 µm GaAs die. HTOL tests were , note provides information regarding the reliability performance of GaAs integrated circuits and , Temperature To calculate the reliability of a FET , the temperature in the channel region (Tch) must be , thermal resistance of GaAs is a function of temperature and therefore the bias conditions at which the , ) To(°C)+273 FET HTOL Results HTOL tests were conducted on 183 MMICB FETs from seven wafers. These


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2000 - IMCS 700

Abstract: Ablebond 71-1 TC729 TC724 tc725
Text: , "Determination of FET Thermal Resistance from DC Idmax Data", 1992 GaAs REL Workshop, Miami, Florida, Oct. 4 , provides information regarding the reliability performance of GaAs integrated circuits and components , : 4.0 Channel Temperature To calculate the reliability of a FET , the temperature in the channel region , thermal modeling programs. The thermal resistance of GaAs is a function of temperature and therefore the , (°C)+273 TH(Tch) TH(To) To(°C)+273 FET HTOL Results HTOL tests were conducted on 183 MMICB


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Not Available

Abstract: No abstract text available
Text: Bonding GaAs MESFET For OPTO Receivers High Gm , Typically 45 mS ■MODEL NO. P35-1110 Clï ■General Purpose Amplifier In PIN FET Receiver DRAIN GATE SOURCE . DRAIN : SOURCE 15 MILS -W V ^ - ELEMENT VALUE 3.8 Rg Cgs 0.36 Ri 4.9 Cdg 0.038 Gm 46 401 , ITS SMALL DIMENSIONS, THE MICROWAVE FET CAN BE DAMAGED OR DESTROYED IF SUBJECT TO LARGE TRANSIENT , 50 mA 30 -0 5 P1NCH0FF VOLTAGE, Vp TRANSCQNDUCTANCE, Gm OPERATING TEMPERATURE M AX


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PDF 0001fl3D P35-1110 D4T50
2003 - e-phemt

Abstract: HBT agilent series DC bias of gaas FET GaAs mesfet list
Text: High Good E-pHEMT - 60%, GaAs HBT - 50% (GSM) High Gm upon turn-on Yes No Class-B and , used for power amplifiers (PAs) that include a mix of Silicon and GaAs devices ­ Silicon Bipolar, Silicon MOSFET, GaAs MESFET, GaAs HBT and GaAs pHEMT. Agilent uses enhancement-mode pHEMT (E-pHEMT) process for its PA design while most competitors have developed GaAs HBT technology. This paper shows , consumption Historically, leakage current has not been a strength of E-mode FET devices. However, Agilent


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PDF 5988-8574EN e-phemt HBT agilent series DC bias of gaas FET GaAs mesfet list
opto fet

Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
Text: FEATURES ■General Purpose Amplifier In PIN FET Receiver ■Transimpedance Amplifier For Wide Band PIN FET Receiver ■High Gm , Typically 45 mS ■Low Gate Leakage Current, Typically 10nA , PERFORMANCE (ÜüT MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers TRANSCONDUCTANCE, Gm Vs TEMPERATURE , MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers ELEMENT VALUE UNITS Rg 3.8 a Cgs 0.36 pF Ri 4.9 Si Cdg 0.038 PF Gm 46 mS Rds 401 Q Cds 0.08 pF Rdg 7.8 Q Rs 4.5 £2 Rd 4.36 a Ls 0.065 nH T


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PDF P35-1110 0242A opto fet 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
GEC Marconi

Abstract: marconi
Text: FEATURES General Purpose Amplifier In PIN FET Receiver Transim pedance Amplifier For W ide Band PIN FET Receiver High Gm , Typically 45 mS & GATE UNITS a pF a pF MODEL NO. P35-1110 GaAs , V ''- 1 Cgs Vc ELEMENT VALUE 3.6 0.36 4.9 0.038 46 401 0.08 7.8 4.5 4.36 0.065 4.0 Rg Cgs Rl Cdg Gm , PRECAUTIONS OWING TO ITS SMALL DIMENSIONS, THE MICROWAVE FET CAN BE DAMAGED OR DESTROYED IF SUBJECTED TO , PARAMETER DRAIN CURRENT, tdss PINCHOFF VOLTAGE, Vp TRANSCONDUCTANCE, Gm GATE LEAKAGE CURRENT VOLTAGES


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PDF P35-1110 GEC Marconi marconi
FE42-0001

Abstract: SVC6310
Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features · Typical RF Performance 0.5 µm , Description KF44 (4X75) 300 um FET Param. Test Conditions Freq. Typ. Val. MAG VDS = 3V, IDS , Parameter Test Conditions Units Min. Typ. Max. 200um PCM FET IDSS VDS = 3V, VGS = 0V mA/mm 140 185 235 DC GM VDS = 3V, IDS = 0.5IDSS mS/mm 150 190 220 Vp , RF GM VDS = 3V, IDS = 0.5IDSS mS 36 44 52 Cgs VDS = 3V, IDS = 0.5IDSS pF


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PDF 50IDSS 12/18GHz 25IDSS 25GHz 300um FE42-0001 SVC6310
MS2532

Abstract: 15544 FE43-0001 tv lg 37 datasheet FC06 SVC6310 MESFET MULTIWATT die
Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features · Typical RF Performance 0.5 µm , FC06 (6X150) 900 um FET Param. Test Conditions Freq. Typ. Val. MAG VDS = 8V, IDS = , Specifications: TA = +25 °C Parameter Test Conditions Units Min. Typ. Max. 200um PCM FET IDSS VDS = 3V, VGS = 0V mA/mm 180 240 310 DC GM VDS = 3V, IDS = 0.5IDSS mS/mm 125 , V -11 -15 - RF GM VDS = 3V, IDS = 0.5IDSS mS 25 32 45 Cgs VDS = 3V


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PDF 6X150) 40IDSS 2/12GHz 680/525mW/mm 20GHz MS2532 15544 FE43-0001 tv lg 37 datasheet FC06 SVC6310 MESFET MULTIWATT die
Not Available

Abstract: No abstract text available
Text: 200um PCM FET IDSS DC GM Vp BVgd RF GM Cgs Cgd Cds Ft Sheet Resistances NDRS (N- GaAs ) NCRS (NiCr) GFRS , GaAs Foundry Services PROCESS PE3 Features · · · · · · 0.5 |im MBE MESFET Technology for High , qualification Custom test and packaging PE3 V2.00 Typical RF Performance FC06 (6X150) 900 um FET Param , +81 3 3263-8769 Europe: T e l.+44 (1344) 869-595 Fax +44 (1344) 300-020 GaAs Foundry Services Normalized Nominal Models Parameter los mA/mm gm mS/mm C gS pF/mm Cgd Process PE3 V2 . 00 Mask Layer


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PDF 6X150) 2/12GHZ 2/12GHZ 680/525mW/mm 20GHz 900um
Not Available

Abstract: No abstract text available
Text: Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■+24 dBm , Arsenide ( GaAs ) n-channel Field Effect Transistor ( FET ) utilizing a 0.5 micron long by 720 micron wide , 0000525 101 « L I T T 1/4 W att, Low Distortion GaAs FET ABSOLUTE MAXIMUM RATINGS at 25 °C , PRECAUTIONS GaAs FET chips should be stored in a dry nitrogen environment until die attached. GaAs FET chips , + resistance, output ruggedness (high load VSWR), and constant transconductance ( Gm ) over a wide range of input


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PDF 5S44SDD 0GDG524 LF6872 18GHz LF6872 2285-C
Not Available

Abstract: No abstract text available
Text: FEATURES MODEL NO. P35-1110 ■General Purpose Amplifier In PIN FET Receiver ■Transimpedance Amplifier For Wide Band PIN FET Receiver GaAs MESFET For OPTO Receivers ■High Gm , Cgs Ri Cdg Gm Rds Cds Rdg Rs Rd Ls SOURCE 15 M IL S T 3.8 0.36 4.9 UNITS , SMALL DIMENSIONS, THE MICROWAVE FET CAN BE DAMAGED OR DESTROYED IF SUBJECT TO LARGE TRANSIENT , Materials, UK, and is distributed by Daico Industries. MODEL NO. P35-1110 GaAs MESFET For 0P T 0


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PDF P35-1110 DDQ21
2004 - MGFC42V5964A

Abstract: mgfc42v5964
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs , MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC42V5964A 5.9 - 6.4 GHz BAND 16W INTERNALLY MATCHED GaAs FET (Ta=25 Deg.C) Po,Eadd VS. Pin OUTPUT POWER Po(dBm) OUTPUT , 0.079 146 0.43 48 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR < GaAs FET


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PDF MGFC42V5964A MGFC42V5964A Item-51] June/2004 mgfc42v5964
2005 - MGFK30V4045

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK30V4045 is an internally impedance matched GaAs power FET especially , Jul-'05 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC Jul/'05 Mitsubishi , )prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol IDSS VGS(off) gm P1dB


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PDF MGFK30V4045 MGFK30V4045 350mA 350mA,
JD 1803

Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
Text: , as a rule of thumb, gain of a GaAs FET amplifier stage varies at a rate of approximately 0.015 dB/°C , range. Gallium arsenide ( GaAs ) integrated-circuit (IC) technology became commercially available abundantly as a foundry process since the early 1980s. Most of the ICs using GaAs technology, were previously , growth in mobile and wireless communications has led to expanded GaAs technology development and its new , there is significant interest in the commercial applications of GaAs analog and digital ICs in systems


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2003 - MGFC36V5867

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC36V5867 5.86.75GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5867 device is an internally impedance-matched GaAs power FET , Max. 3.75 -4.5 1.8 6 A S V dBm dB A % deg.C/W MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC36V5867 5.86.75GHz BAND 4W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP , ELECTRIC MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC36V5867 5.8 ~ 6.75GHz BAND 4W INTERNALLY MATCHED


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PDF MGFC36V5867 75GHz MGFC36V5867 75GHz 36dBm June/2004
2004 - 5.8 ghz amplifier 10w

Abstract: MGFC40V5258
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 , SEMICONDUCTOR < GaAs FET > MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI , gm VGS(off) P1dB GLP ID P.A.E. Rth(ch-c) Parameter (Ta=25deg.C) Test conditions


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PDF MGFC40V5258 MGFC40V5258 June/2004 5.8 ghz amplifier 10w
2004 - MGFK39V4045

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFK39V4045 14.0-14.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK39V4045 is an internally impedance matched GaAs power FET especially , ELECTRIC June-'04 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFK39V4045 14.0-14.5GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 Mitsubishi , )prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB


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PDF MGFK39V4045 MGFK39V4045 25deg
2005 - Traveling Wave Amplifier

Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Text: Process An optical photo lithography based 0.15m GaAs PHEMT process and 2mil-substrate technology that , /sq precision resistors. Isolation mask and oxygen implantation is then done to isolate the FET and , " GaAs MMIC production process will be described. To evaluate the process capability for mm-wave , 30.5GHz frequencies. 0.7 Vds = 1 Vds = 3 Vds = 5 Vds = 6 0.6 Gm [S/mm], Ids [A/mm] Introduction 0.5 Gm (Vds = 1) Gm (Vds = 3) Gm (Vds = 5) Gm (Vds = 6) 0.4 0.3 0.2 0.1 0 -2


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PDF 85GHz 575mA/mm, 753mW/mm 18GHz. 12dBm AV02-1684EN Traveling Wave Amplifier 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Not Available

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 , MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 Mitsubishi


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PDF MGFC42V5258 MGFC42V5258 June/2004
2004 - 5.8 ghz amplifier 10w

Abstract: Gaas Power Amplifier 10W
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees , < GaAs FET > MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC , =25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. Rth(ch-c) (Ta=25deg.C) Test


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PDF MGFC40V5258 MGFC40V5258 25deg June/2004 5.8 ghz amplifier 10w Gaas Power Amplifier 10W
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