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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

g10 smd transistor Datasheets Context Search

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1996 - g10 smd transistor

Abstract: transistor c347 SMD Transistor g10 C348 gFE smd diode SMD-220 IRGBC40M-S D-12 AN-994 c347 transistor
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C · Short circuit rated - , control and other applications requiring short circuit withstand capability. SMD -220 Absolute , 40 80 - Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material) For , %. Refer to Section D for the following: Package Outline 2 - SMD -220 Section D - page D-12 C-348 To


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PDF IRGBC40M-S 10kHz) SMD-220 C-348 g10 smd transistor transistor c347 SMD Transistor g10 C348 gFE smd diode IRGBC40M-S D-12 AN-994 c347 transistor
1996 - g10 smd transistor

Abstract: C347 gFE smd diode AN-994 D-12 IRGBC40M-S SMD-220 transistor c347 c347 transistor
Text: Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C · Short circuit rated - 10µs @ 125°C, V GE = 15V · Switching-loss , applications requiring short circuit withstand capability. SMD -220 Absolute Maximum Ratings Parameter , Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended , %. Refer to Section D for the following: Package Outline 2 - SMD -220 Section D - page D-12 C-348 Pulse


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PDF IRGBC40M-S 10kHz) SMD-220 C-348 g10 smd transistor C347 gFE smd diode AN-994 D-12 IRGBC40M-S transistor c347 c347 transistor
1993 - 1000 watts amplifier schematic diagram with part

Abstract: MRF844 UNELCO MICA CAPACITORS schematic diagram 800 watt power amplifier AN-578 transistor Common Base configuration uhf motorola glass capacitor mini electrolytic 5Bp power control
Text: . The amplifier uses the internally matched MRF844 transistor in a common base Class C configuration , using glass teflon laminate and the second using less expensive G-10 board. (Figure 1). The circuit , capacitors are used at the input and output of the transistor transforming the complex inductive impedance , amplifier. b. Circuit Using G­10 Board a. Circuit Using Glass Teflon Laminate Figure 1. Two , Schematic of 30 Watt 806 ­ 870 MHz Amplifier Design of microstrip circuits using a G-10 board material is


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PDF EB105/D EB105 MRF844 1000 watts amplifier schematic diagram with part UNELCO MICA CAPACITORS schematic diagram 800 watt power amplifier AN-578 transistor Common Base configuration uhf motorola glass capacitor mini electrolytic 5Bp power control
1993 - MRF844

Abstract: UNELCO MICA CAPACITORS 1000 watts amplifier schematic diagram with part AN-578 NIPPON CAPACITORS Application motorola microwave laminate board an578 Copper clad laminate unelco mica trimmer capacitor
Text: communications band. The amplifier uses the internally matched MRF844 transistor in a common base Class C , presented, one using glass teflon laminate and the second using less expensive G-10 board. (Figure 1). , mica capacitors are used at the input and output of the transistor transforming the complex inductive , amplifier. b. Circuit Using G­10 Board a. Circuit Using Glass Teflon Laminate Figure 1. Two , circuits using a G-10 board material is complicated by several factors. This is discussed in detail in


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PDF EB105/D EB105 MRF844 UNELCO MICA CAPACITORS 1000 watts amplifier schematic diagram with part AN-578 NIPPON CAPACITORS Application motorola microwave laminate board an578 Copper clad laminate unelco mica trimmer capacitor
transistor smd MJ 145

Abstract: g10 smd transistor transistor smd bh SMD Transistor 502 c858
Text: International [iÖ R 1 Rectifier INSULATED GATE BIPOLAR TRANSISTOR Features · Short circuit rated - 10ps @ 125°C, Vge = 15V · Switching-loss rating inciudes all "tail* losses · Optimized for high , suited for motor control and other applications requiring short circuit withstand capability. SMD , - ' When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering , Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD -220 Section D - page D-12 C-860


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PDF IRGBC20K-S SMD-220 C-860 transistor smd MJ 145 g10 smd transistor transistor smd bh SMD Transistor 502 c858
2007 - g10 smd

Abstract: No abstract text available
Text: Capacitance Capacitors RV Anticleaning solvent SMD • Compatible with surface mounting. â , symbol Casing symbol G68 G10 H10 • Land pattern size is described on page 10. • The taping , €” — — — — — — — — — 8x6.5 G68 7.5 155 8x10 G10 7.5 139 , €” — — — 8x6.5 G68 6.0 155 8x6.5 G68 5.0 155 8x10 G10 5.0 139 10x10 H10 47 , 155 8x6.5 G68 4.2 155 8x10 G10 3.5 252 10x10 H10 3.5 226 68 — — — â


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PDF 8x10L 10x10L) 120Hz 2006/2007E 2007/2008E g10 smd
Not Available

Abstract: No abstract text available
Text: International ^ R e c tifie r P D - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 10ps @ 125°C, V , circuit withstand capability. SMD -220 Absolute Maximum Ratings Parameter Max. lc @ Tc = , 80 Weight 2 (0.07) °C/W g (°z ) * When mounted on 1“ square PCB (FR-4 or G-10 , Outline 2 - SMD -220 Section D - page D-12 C-872 4A5S452 D020bb2 bTf i 100 Vce


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PDF IRGBC40K-S C-871 S5452 DG20bbl SMD-220 C-872 4A5S452 D020bb2
Not Available

Abstract: No abstract text available
Text: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V â , other applications requiring short circuit withstand capability. SMD -220 Absolute Maximum Ratings , " square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to , Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD -220 Section D - page D-12 C


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PDF IRGBC20M-S 10kHz) 4AS54S2 SMD-220 C-340 MA55452
SMD CODE H11

Abstract: H1108 C5101 H110 H1109 "SMD Code" h11 MARKING H11 SMD CODE G10
Text: with carrier taping. Guarantees 2000 hours at 105° C. SMD 105°C Vibration Resistance , symbol Casing symbol U Additional symbol Taping symbol P2 Casing symbol G10 4.4 H11 , 8×10 G10 8.3 99 33 8×10 G10 6.0 178 10×10.5 H11 5.5 160 47 8×10 G10 4.6 178 8×10 G10 4.2 178 10×10.5 H11 3.9 160 100


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PDF 2000hours 120Hz 2010/2011E SMD CODE H11 H1108 C5101 H110 H1109 "SMD Code" h11 MARKING H11 SMD CODE G10
LE C346

Abstract: No abstract text available
Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V â , suited for motor control and other applications requiring short circuit withstand capability. SMD , ) ' When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering , Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD -220 Section D - page D


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PDF IRGBC30M-S 10kHz) SMD-220 C-346 4flS54S2 002013b LE C346
transistor C2075

Abstract: g10 smd transistor SMD Transistor 1c
Text: APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a , €˜C . ac - » OUTPUT TRANSISTOR Power dissipation @ 25°C . . 150 mW Derate , Vn= 3 .0 V - 10 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVcso 30 , TRANSISTOR OUTPUT OPTOCOUPLER T -4 1 -8 3 ELECTRICAL CHARACTERISTIC CURVES {Fa~ 25'C Unless Otherwise , TECHNOLOGIES S7E D 74tbaSl G00344b S VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER T— 41-83


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PDF 74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c
Not Available

Abstract: No abstract text available
Text: TRANSISTOR V ces = 600V VcE(sat) ^ 3.0V @ VGE = 15V, lc = 24A Description Insulated Gate Bipolar , °c/w 9 (°z) - 2 (0.07) ' When mounted on 1" square PCB (FR-4 or G-10 Material) For , . Refer to Section D for the following: Package Outline 2 - SMD -220 Section D - page D-12


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PDF 10kHz) IRGBC40M-S SMD-220
Not Available

Abstract: No abstract text available
Text: International IM] Rectifier Preliminary Data Sheet PD - 9.1135 IRGBC40M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10jjs @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating , PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to application , %. Refer to Section D for the following: Package Outline 2 - SMD -220 Section D - page D-12 C-348 ■4


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PDF IRGBC40M-S 10jjs 10kHz) SMD-220 C-348
SMD CODE G10

Abstract: SMD g10 SMD code 747 g10 smd SMD h10 marking g10 C5101
Text: taping. Guarantees 2000 hours at 105. (12.5×13.5 5000 hours at 105) SMD 105°C 2000hours , to 1.4 P 2.3 3.1 4.7 4.6 Casing symbol G68 G10 H10 E Part numbering system 8,10 , 8×6.5 G68 110 8×6.5 G68 Taping symbol 8×10 G10 H10 Additional symbol 63 , G68 G68 G10 Casing symbol 100 Rated ripple current Case Casing symbol Rated ripple current D mm 8×10 G10 67 8×10 G10 99 10×10 H10 133 178


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PDF 2000hours 120Hz 100kHz 2010/2011E SMD CODE G10 SMD g10 SMD code 747 g10 smd SMD h10 marking g10 C5101
marking code 651 Electrolytic

Abstract: g10 smd C5101 SMD CAPACITORS 106 E marking code 651 smd SMD CODE G10
Text: . Guarantees 2000 hours at 85. Anticleaning solvent SMD Large Capacitance RV RV2 Marking color , ) Casing symbol G68 G10 H10 E 120 1k 1 1 1 1.21 1.16 1.06 Part numbering system 8 , 8×6.5 G68 110 8×10 G10 178 8×6.5 G68 110 8×10 G10 178 100 220 8×10 G10 178 8×10 G10 178 10×10 H10 330 8×10 G10 178 10×10 , D mm mArms D mm 8×10 G10 67 8×6.5 G68 110 8×10


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PDF 120Hz 2010/2011E marking code 651 Electrolytic g10 smd C5101 SMD CAPACITORS 106 E marking code 651 smd SMD CODE G10
"SMD Code" h11

Abstract: C5101-1 SMD CODE H11 MARKING H11
Text: carrier taping. · Guarantees 2000 hours at 105°C. SMD 105°C Vibration Resistance 2000hours , tolerance symbol symbol symbol Taping symbol Casing symbol G10 H11 · Land pattern size is , - - - - - - - mArms ø D(mm) - 8x10 G10 8.3 - Casing symbol ESR Rated ripple current mArms 8x10 G10 16.6 67 99 10x10.5 H11 7.5 133 - - - - - - 8x10 G10 1.5 178 10x10.5 H11 1.3 324 10x10.5 H11 1.1 324 10x10.5 H11 0.80 324 -


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PDF 2000hours 120Hz 2006/2007E 2007/2008E 120Hz) "SMD Code" h11 C5101-1 SMD CODE H11 MARKING H11
D55 SMD CODE MARKING

Abstract: RV5 C Cap C5101 h10 marking SMD CODE G10
Text: ALUMINUM ELECTROLYTIC CAPACITORS Anticleaning solvent SMD Compatible with surface mounting , 3.1 4.7 Casing symbol B55 D55 E55 F55 F80 G68 G10 H10 5060 120 1k 10k100k , Rated capacitance Capacitance symbol tolerance symbol G10 Casing symbol U Additional symbol , 41 6.3×5.3 F55 47 8×6.5 G68 62 8×10 G10 94 2.2 , F80 F80 54 6.3×7.7 F80 85 8×10 G10 139 10×10 H10 189 120 8×10


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PDF 120Hz 2010/2011E D55 SMD CODE MARKING RV5 C Cap C5101 h10 marking SMD CODE G10
transistor c1684

Abstract: No abstract text available
Text: linearly from 25°C . .1.2 mW/°C OUTPUT TRANSISTOR Power dissipation @ 25 , Cj Reverse leakage current Ir 0.35 10 OUTPUT TRANSISTOR DC forward current gain , 0 0 0 3 3 0 0 1 ■SURFACE MOUNT OPTIONS 7 ~ 9 û ~ Z Ç > SMD OPTION 100 PACKAGE , with certain minimum quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic MCT62-100 Dual Transistor Output HCPL


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PDF MCT272 MCT272 MCT9001 transistor c1684
SMD Transistor AFR

Abstract: No abstract text available
Text: Derate linearly from 25°C . 0.8 mW/'C OUTPUT TRANSISTOR Power dissipation @ 25 , V, f= 1 MHz M V r= 3 .0 V .65 Ir 0.35 hre 10 420 OUTPUT TRANSISTOR DC , TECHNOLOGIES ■74btiaSl 0 0 0 3 3 0 0 1 ■SURFACE MOUNT OPTIONS 7~9û~ZÇ> SMD OPTION 100 , certain minimum quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic MCT62-100 Dual Transistor Output HCPL


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PDF 74bbfl51 T-41-83 MCT277 MCT277 C2090 15pseconds MCT9001 SMD Transistor AFR
transistor 41 74t

Abstract: smd TRANSISTOR 27e
Text: linearly from 25'C .1,8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25 , 65 10 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVceo 30 45 V lc , TECHNOLOGIES ■?4btiasi G o o 3 3 a a i ■SURFACE MOUNT OPTIONS 7 ~ 9û~ZÇ> SMD OPTION 100 , with certain minimum quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic MCT62-100 Dual Transistor Output HCPL


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PDF 74bhfl51 T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 MCT2200â MCT2201â transistor 41 74t smd TRANSISTOR 27e
1250H

Abstract: SMD h10 C5101 125135
Text: °C Capacitors SMD 125°C 105°C 1250hours 5000hours Compatible with surface mounting. Supplied , Rated ripple current max. mArms Case Casing D×L (mm) 8×10 symbol G10 Taping , 47 H10 0.65 45 8×10 G10 0.80 38 8×10 G10 1.00 33 10×10 H10 0.65 48 10×10 H10 0.67 48 G10 , E 0.105 579 8×10 G10 0.68 60 10×10 H10


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PDF 1250hours 5000hours 100kHz 120Hz 2010/2011E 1250H SMD h10 C5101 125135
Not Available

Abstract: No abstract text available
Text: OUTPUT TRANSISTOR Power dissipation @ 25°C . . 200 mW Derate linearly from 25’C , TRANSISTOR DC forward current gain TEST CONDITIONS -1 .8 3.0 65 Reverse leakage current , TECHNOLOGIES ■?4btiasi G o o 3 3 a a i ■SURFACE MOUNT OPTIONS 7~9û~ZÇ> SMD OPTION 100 , minimum quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic MCT62-100 Dual Transistor Output HCPL-2631-100 Dual


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PDF MCT276 MCT276 m-78T C2079 MCT9001
AN569

Abstract: SMD310 4p03
Text: Information MMFT4P03HD Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistor , mW/°C Junction­to­Ambient on 0.92 inch SQ FR­4 or G10 board at TA = 25°C Derate above 25°C PD 1.4 11.1 Watts mW/°C Junction­to­Ambient on minimum pad FR­4 or G10 board at TA = 25°C Derate , Junction­to­Ambient on 1 inch SQ FR­4 or G10 board at TA = 25°C* Derate above 25°C Operating and Storage , 1 inch SQ FR­4 or G10 board at TA = 25°C* Junction­to­Ambient on 0.92 inch SQ FR­4 or G10 board at


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PDF MMFT4P03HD/D MMFT4P03HD MMFT4P03HD MMFT4P03HD/D* AN569 SMD310 4p03
smd E61

Abstract: SMD Electrolytic CAPACITORS C5101 marking e61 g10 smd
Text: hours at 105. (10L:5000 hours). GREEN CAP SMD Anticleaning solvent 105°C 3000hours , 2.0 2.0 2.3 3.1 4.7 Casing symbol D61 E61 F61 F80 G68 G10 H10 Part numbering system , 6.3×5.8 F61 6.3×7.7 F80 G10 8×10 10×10 H10 10 Case Casing mArms D(mm) symbol 26 5×5.8 E61 46 71 8×10 G10 101 230 313 Rated ripple current , 39 6.3×5.8 F61 6.3×7.7 70 F80 8×10 G10 81 10×10 H10 340 Rated


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PDF 3000hours 120Hz) 120Hz 2010/2011E smd E61 SMD Electrolytic CAPACITORS C5101 marking e61 g10 smd
g10 smd transistor

Abstract: SMD Transistor g10 f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking
Text: TMOS Dual N-Channel Field Effect Transistor Micro8,u devices are an advanced series of power MOSFETs , -4/ G-10 board using min. recommended footprint, based on PD in 1 die, 1 die operating. (Vqs = 10 v- ® Steady State) When mounted on FR-4/ G-10 board using min. recommended footprint, based on PD in 1 die , comparison to the other SMD devices. (V qq = 10 V, @ Steady State) Repetitive rating; pulse width limited by , Motorola TMOS Power MOSFET Transistor Device Data M TD F1N 03HD ELECTRICAL CHARACTERISTICS O a = 25


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PDF EIA-481-1. g10 smd transistor SMD Transistor g10 f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking
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