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SP160-SM02-T SP160-SM02-T ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Single Tray
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fujitsu rf power amplifier 49 Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: amplifier and NPN transistor. The differential amplifier output uses an emitter-follower circuit. • RF amplifier The output signal of a grounded emitter circuit is output via an emitter-follower circuit. The RF , . Mixer, IF Amplifier The mixer is an active, double-balanced mixer. The LO and RF outputs can be , power supply and connects to the IF amplifier in the next stage. The IF amplifier consists of a differential amplifier with an emitter-follower output. 2. RF Amplifier The output signal of a


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PDF DS06-70103-1E MB54600 MB546xx 20-pin, FPT-20P-M03) 34-pin,
2007 - s29gl032n90

Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Text: (Supporting External Synchronization) Power Supply Applications ASSP For FUJITSU SEMICONDUCTOR DATA , for supplying power to the amplifier · Built-in two error back-lighting fluorescent tube for a liquid , Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation , Converters with Switching FET 28 DC/DC Converters for RF Power Amp. 28 DSC/Camcorder DC/DC , noise Low power dissipation 100 MHz to 2.0 GHz RF Integer-N 64/65, 128/129 MB15E05SL


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PDF covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
2001 - data acquisation system

Abstract: MB87L2250 DVB demodulator MB87J217A "channel estimation"
Text: FEATURES 21 dB programmable gain amplifier (PGA) Low power consumption (<750mW) Very small package (80 , analog block a distinction in power supply is made for the amplifier section and track and hold stage and , Fujitsu 's second generation DVB-T (ETS / EN 300 744) compliant integrated COFDM Demodulator and Forward-Error-Corrector. Fujitsu , a leading company in CMOS Mixed Signal developments offers very high level of integration. The on-chip analog Programmable Gain Amplifier (PGA) and the 1st IF input lower the bill of


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PDF MB87J217A MB87J217A data acquisation system MB87L2250 DVB demodulator "channel estimation"
2000 - Fujitsu GaAs FET Amplifier

Abstract: FLL2400IU-2C Fujitsu GaAs FET Amplifier design
Text: Power Amplifier . · W-CDMA and IMT 2000 Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient , FLL2400IU-2C L-Band High Power GaAs FET FEATURES · · · · Push-Pull Configuration High Power Output: 240W (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation , matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting


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PDF FLL2400IU-2C FLL2400IU-2C FCSI1100M200 Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design
FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Text: Components The RF circuit elements of the 60-W amplifier are the Fujitsu FLL600IQ-2C, 60-W push-pull power , FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 ­ 2.17 GHz Push-Pull Amplifier for IMT-2000 Base , , few pF, to realize a good RF short circuit in the amplifier RF passband, then 100 pF, 1, 10, 100 nF , defined. FUJITSU APPLICATION NOTE - No 005 Drain Bias Circuit RF Microstrip Matching /4 High , types: a small value, few pF, very high Q, to realize a good RF short circuit in the amplifier RF


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PDF IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz
FUJITSU MICROWAVE TRANSISTOR

Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
Text: .787 Table 1. Arlon substrate parameters Amplifier Components The RF circuit elements of the 60W amplifier are the Fujitsu FLL600IQ-3, 60-W power GaAs FET device, two 50-ohm coaxial baluns(2), several , FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station , amplifier design is provided without example. FUJITSU APPLICATION NOTE - No 007 FLL600IQ-3 Device , two 30-W Au gate power GaAs FET chips that are independently configured within the Fujitsu IQ


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PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
1998 - DCS Automation PDF Notes

Abstract: auTOMATION DCS pdf Notes KU SG 2.45 30 A RX-3 BCC-16 FPT-16P-M05 LQFP-48P MB15G000 SSOP-16 SSOP-20
Text: accordance with user's demand function and characteristic. FUJITSU prepares standard RF macros. They are , frequency: to 3.0 GHz (max) Supply voltage: 2.5 to 5.5 V Standard RF macro Low power consumption Package , To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-1E Semicustom Bi-CMOS ASTRO-NT (for RF front-end LSI-Based on PLL, Analog Macro) MB15G000 Series s DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology stands on


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PDF DS06-70105-1E MB15G000 DCS Automation PDF Notes auTOMATION DCS pdf Notes KU SG 2.45 30 A RX-3 BCC-16 FPT-16P-M05 LQFP-48P SSOP-16 SSOP-20
2006 - S29JL032H70

Abstract: No abstract text available
Text: For Power Supply Applications ASSP FUJITSU SEMICONDUCTOR DATA SHEET BIPOLAR DS04 , error amplifier : –0.2 V The MB3789 is the ideal IC for supplying power to the amplifier • Built-in , Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation , , 64/65 MB15E07SL For digital telecommunications equipment, Low power dissipation RF , Low power dissipation 16/17, 32/33 RF Integer-N Features MB15F78UL IF Integer-N Part


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PDF PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70
2002 - mobile rf power amplifier transistor

Abstract: DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49
Text: Pin No. Pin Name I/O Power supply terminal for channel RF . Output terminal for the limiter amplifier . 4 DoRF O VPRF Charge pump power supply terminal for channel RF . 6 GNDDRF , Error Leak Power During Maximum Output Limiter Amplifier RSSI ACP2 -68 dB , Vector Error Leak Power During Maximum Output Limiter Amplifier RSSI ACP2 -68 , input terminal for channel RF (with Schmidt trigger input). When the power is turned ON, be sure to


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PDF MB39A102 23-bit mobile rf power amplifier transistor DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49
FUJITSU MICROWAVE TRANSISTOR

Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
Text: . 150-W WCDMA Amplifier Components The RF circuit elements of the 150W amplifier are the Fujitsu , Push-Pull Amplifier Device Maximum Power Dissipated Versus Flange Temperature 6 FUJITSU , matching network schematic for the 150W WCDMA amplifier using FLL1500IU-2C 8 RF OUT FUJITSU , FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT , repeatability · High Power Added-Efficiency SUMMARY: A 150-W push-pull amplifier design for the


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PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor
GSC371BAL2000

Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Text: in linearity to much higher power single-ended devices. 40 Watt PCS Amplifier Components The RF circuit elements of the 40W amplifier are the Fujitsu FLL400IP-2, 40W power GaAs FET, two SHOSHIN balun , Au gate power GaAs FETs that are DC and RF connected in a push-pull configuration within the , network schematic for the 40W PCS amplifier using FLL400IP-2 5 FUJITSU APPLICATION NOTE - No 002 , graphs. The amplifier was tuned for optimum CDMA ACP at 1960 MHz at a target output power of 37.5 dBm


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PDF 1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
Text: Components The RF circuit elements of the 150-W amplifier are the Fujitsu FLL1500IU-2C, 150-W power GaAs , FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 , provides the RF engineer with a design for a 150-W balanced amplifier . This design is suited for WCDMA , FLL1500IU-2C utilizes two pairs of 40 W Au gate power GaAs FET chips that are mounted within the Fujitsu , the amplifier RF passband, then 100 pF, 1, 10, 100 nF, 1 and 10 uF to realize a good filtering (short


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PDF IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
Text: . 150-W WCDMA Amplifier Components The RF circuit elements of the 150W amplifier are the Fujitsu , FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT , this application note provides the RF engineer with a design for a 150-W push-pull amplifier . This , circuit in the amplifier RF passband, then 100 pF, 1, 10, 100 nF, 1 and 10 uF to realize a good , : a small value, few pF, very high Q, to realize a good RF short circuit in the amplifier RF passband


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PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B push pull class AB RF linear L band stub tuner matching
MB15G000

Abstract: SSOP-16 SSOP-20 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64
Text: accordance with user's demand function and characteristic. FUJITSU prepares standard RF macros. They are , frequency: to 3.0 GHz (max) Supply voltage: 2.5 to 5.5 V Standard RF macro Low power consumption Package , To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT (for RF front-end LSI-Based on PLL, Analog Macro) MB15G000 Series s DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology stands on


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PDF DS06-70105-3E MB15G000 SSOP-16 SSOP-20 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64
FUJITSU MICROWAVE TRANSISTOR

Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
Text: presented today will be that of the pushpull circuit. 80-W WCDMA Amplifier Components The RF circuit elements of the 80-W amplifier are the Fujitsu FLL800IQ-2C, 80-W power push-pull GaAs FET, two 50 , FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 ­ 2.17 GHz Push-Pull Amplifier for IMT-2000 Base , , few pF, to realize a good RF short circuit in the amplifier RF passband, then 100 pF, 1, 10, 100 nF , defined. FUJITSU APPLICATION NOTE - No 006 Drain Bias Circuit RF Microstrip Matching /4 High


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PDF IMT-2000 FLL800IQ-2C Descriptio10 220mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 understanding thermal basics for microwave power
RV001

Abstract: C4805 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64 MB15G000 SSOP-16 SSOP-20 LQFP64
Text: frequency: to 3.0 GHz (max) • Supply voltage: 2.5 to 5.5 V • Standard RF macro • Low power , Semicustom Bi-CMOS ASTRO-NT (for RF front-end LSI-Based on PLL, Analog Macro) MB15G000 , performance RF LSI. The technology stands on a macro concept and create a custom LSI ideal for use in high frequency front-end circuit such as VCO, amplifier , mixer and l/Q modulator devices. The chip can be built by combining macros, in accordance with user's demand function and characteristic. FUJITSU prepares


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PDF MB15G000 C48055SC-1 RV001 RV002MIX RV002 C4805 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64 SSOP-16 SSOP-20 LQFP64
Not Available

Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT (for RF , 's demand function and characteristic. FUJITSU prepares standard RF macros. They are well finished in , is possible to modify RF macro in response to user's demand. This LSI series uses FUJITSU 's latest , GHz (max) Supply voltage: 2.5 to 5.5 V Standard RF macro Low power consumption Package line up , technology to correspond to the demand of high performance RF LSI. The technology stands on a macro concept


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PDF DS06-70105-3E MB15G000
1999 - Not Available

Abstract: No abstract text available
Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES · · · · · High Output Power : P1dB = , 17.5-20GHz Power Amplifier MMIC OUTPUT POWER vs. IMD P1dB, G1dB vs. FREQUENCY -15 34 VDD = 6V IDD , 0.15µF 0.15µF VGG VDD 2 28 30 FMM5805X 17.5-20GHz Power Amplifier MMIC BONDING , 162.5 156.4 156.3 158.9 165.0 178.1 -165.7 3 FMM5805X 17.5-20GHz Power Amplifier MMIC , 80µm x 80µm 2. RF 120µm x 80µm For further information please contact: FUJITSU COMPOUND


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PDF FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200
2003 - FMM5057VF

Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC For further information please contact : FUJITSU COMPOUND , FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES High Output Power : 34.0dBm(typ.) High Linear , STYLE: VF ESD 2.6 : 1 1 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC OUTPUT POWER , POWER , e r [dBm ] 38 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC DRAIN CURRENT vs OUTPUT POWER , Output Power [dBm] 34 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC OUTPUT POWER , POWER ADDED


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PDF FMM5057VF FMM5057VF FCSI0202M200 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
1999 - 0 281 002 924

Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES · · · · · · High Output Power : P1dB , 24-27.0GHz Power Amplifier MMIC P1dB, G1dB vs. FREQUENCY 30 IDD = 220mA VDD = 6V 28 P1dB 24 22 , Amplifier MMIC BONDING LAYOUT VDD1 VDD2 VGG1 VGG2 RF in RFout S-PARAMETERS VDD = 6V , -149.6 -156.4 -162.3 -167.7 -172.6 -177.2 178.1 173.5 FMM5806X 24-27.0GHz Power Amplifier , high-gain, wide band 2-stage MMIC amplifier designed for operation in the 24.0-27.0 GHz frequency range


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PDF FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
2003 - FMM5056VF

Abstract: 005s11 fujitsu power amplifier GHz power amplifier mmic 154-12
Text: : VGG 4 : N.C. 5 : RF out 6 : VDD Unit : mm 7 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC , FMM5056VF 5.8-7.2GHz Power Amplifier MMIC FEATURES High Output Power : 34.0dBm(typ.) High Linear , at Pin=-5dBm ESD - 1 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC OUTPUT POWER , POWER , 6 6.5 Frequency [GHz] 2 7 7.5 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC DRAIN , 5.8-7.2GHz Power Amplifier MMIC OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER


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PDF FMM5056VF FMM5056VF FCSI0202M200 005s11 fujitsu power amplifier GHz power amplifier mmic 154-12
Fujitsu VCO

Abstract: VCO 1.4 GHz BCC-16 FPT-16P-M05 LQFP-48 LQFP-64 MB15G000 SSOP-16 SSOP-20 circuit diagram of MOD 64 counter
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT (for RF , 's demand function and characteristic. FUJITSU prepares standard RF macros. They are well finished in , is possible to modify RF macro in response to user's demand. This LSI series uses FUJITSU 's latest , GHz (max) Supply voltage: 2.5 to 5.5 V Standard RF macro Low power consumption Package line up , technology to correspond to the demand of high performance RF LSI. The technology stands on a macro concept


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PDF DS06-70105-3E MB15G000 F9905 Fujitsu VCO VCO 1.4 GHz BCC-16 FPT-16P-M05 LQFP-48 LQFP-64 SSOP-16 SSOP-20 circuit diagram of MOD 64 counter
1999 - FMM5805X

Abstract: No abstract text available
Text: 17.5-20GHz Power Amplifier MMIC BONDING LAYOUT VGG1 VDD1 VDD2 VDD4 RFout RF in VDD5 VDD3 , FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES · · · · · High Output Power : P1dB = , Material Copyrighted by Its Respective Manufacturer FMM5805X 17.5-20GHz Power Amplifier MMIC OUTPUT , Respective Manufacturer S22 MAG FMM5805X 17.5-20GHz Power Amplifier MMIC CHIP OUTLINE 0 VGG1 , 50 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power , 3-stage MMIC


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PDF FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200
1999 - fujitsu power amplifier GHz

Abstract: FMM5805
Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES · · · · · High Output Power : P1dB = , 17.5-20GHz Power Amplifier MMIC OUTPUT POWER vs. IMD P1dB, G1dB vs. FREQUENCY -15 34 VDD = 6V IDD , 0.15µF 0.15µF VGG VDD 2 28 30 FMM5805X 17.5-20GHz Power Amplifier MMIC BONDING , 17.5-20GHz Power Amplifier MMIC CHIP OUTLINE 0 VGG1 VDD1 VGG1 VDD2 VGG1 VDD4 110 680 710 , 50 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power , 3-stage MMIC


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PDF FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200 fujitsu power amplifier GHz FMM5805
1999 - fujitsu power amplifier GHz

Abstract: No abstract text available
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES · · · · · · High Output Power : P1dB , 24-27.0GHz Power Amplifier MMIC P1dB, G1dB vs. FREQUENCY 30 IDD = 220mA VDD = 6V 28 P1dB 24 22 , Amplifier MMIC BONDING LAYOUT VDD1 VDD2 VGG1 VGG2 RF in RFout S-PARAMETERS VDD = 6V , Power Amplifier MMIC CHIP OUTLINE VDD1 0 VGG1 820 VDD2 2810 VGG2 970 1120 1270 , high-gain, wide band 2-stage MMIC amplifier designed for operation in the 24.0-27.0 GHz frequency range


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PDF FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz
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