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LTC3444EDD#PBF Linear Technology LTC3444 - Micropower Synchronous Buck-Boost DC/DC Converter for WCDMA Applications; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LTC3444EDD#TRPBF Linear Technology LTC3444 - Micropower Synchronous Buck-Boost DC/DC Converter for WCDMA Applications; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LTC3444EDD Linear Technology LTC3444 - Micropower Synchronous Buck-Boost DC/DC Converter for WCDMA Applications; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LTC3444EDD#TR Linear Technology LTC3444 - Micropower Synchronous Buck-Boost DC/DC Converter for WCDMA Applications; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
CYCLONE-3-MERCURYCODE-REF Texas Instruments Cyclone III-based MercuryCode
STELLARIS-3P-CODER-DPROBE430-DEVBD Texas Instruments Red Suite 2

fujitsu gaas marking code Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF FLL55 fujitsu x51 FLL300-1 FLL200-2
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User , Notes APPLICATION NOTES C. PACKAGE MARKINGS Fujitsu marking for SL (commercial) grade devices , Databook APPLICATION NOTES LG PACKAGE MARKING The Fujitsu L.G packages are identified by the color , ) Personnel handling GaAs FETs should be properly grounded by a wristlet chain or equivalent. 2) When mounting


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mmic marking 255

Abstract: mmic case styles DD217 FMM5201ML 9.75 GHz oscillator FMM5201 Fujitsu oscillator FMM51 FMM5107VD FMM5107
Text: 1.1 August 1999 FUJITSU FMM5201ML MMIC GaAs Dual Oscillator Figure 1 : RF CHARACTERISTICS , ) 1000 CIRCUIT LAYOUT Output V|_o1 V|_o2 VDD er = 2.5 FUJITSU FMM5201ML MMIC GaAs Dual , FMM5201ML - MMIC GaAs Dual Oscillator FEATURES • Integrated Monolithic Oscillator • Dual , SMT Applications DESCRIPTION The FMM5201ML is a GaAs dual frequency oscillator MMIC with low phase , downconverter MMIC. Fujitsu 's stringent Quality Assurance Program assures the highest reliability and


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PDF FMM5201ML -90dBc/Hz FMM5201ML FMM5107VD FCSI0598M200 mmic marking 255 mmic case styles DD217 9.75 GHz oscillator FMM5201 Fujitsu oscillator FMM51 FMM5107
033jiF

Abstract: FUJITSU MICROWAVE
Text: FUJITSU FMM1062ML GaAs MMIC Test Circuit Positive Supply Voltage Vdd = +3V Operation Circuit 0.33jiF , 0.33jiF Ï O -| |-O OUTPUT 1000pF VSS = -3.0V FUJITSU FMM1062ML GaAs MMIC INPUT SENSITIVITY , The FMM1062ML is a GaAs Microwave Static Frequency Divider designed for dividing an input signal by 4 , Oscillator, Electronic Toll Collection (ETC) applications Fujitsu 's stringent Quality Assurance Program , -65 +150 °c Power Dissipation PD - 0.12 w GaAs MMIC RECOMMENDED OPERATING CONDITIONS Parameter Symbol


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PDF FMM1062ML FCSI0598M200 033jiF FUJITSU MICROWAVE
1998 - FSC60ML

Abstract: FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817
Text: FSC60ML General Purpose GaAs FET FEATURES · Low Noise Figure: NF=0.8dB (Typ.) @ f=4GHz · High , . DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate that is well suited for GPS , applications. Fujitsu 's stringent Quality Assurance Program assures the highest reliability and consistent , Condition Rating 4 -5 220 -65 to +150 +175 Unit V V mW ¡C ¡C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed


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PDF FSC60ML FSC60ML FCSI0598M200 FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817
1998 - FMM1062ML

Abstract: No abstract text available
Text: FMM1062ML GaAs MMIC FEATURES · Low Power Consumption: 60mW (Typ.) · Operation to 6.0 GHz · , DESCRIPTION The FMM1062ML is a GaAs Microwave Static Frequency Divider designed for dividing an input signal , , Phase-Locked Oscillator, Electronic Toll Collection (ETC) applications. Fujitsu 's stringent Quality Assurance , . 2. The package marking "FJHT" shows the part number, year and month of manufacturer. Where: "FJ" , ) Edition 1.2 August 1999 1 FMM1062ML GaAs MMIC Test Circuit Positive Supply Voltage VDD = +3V


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PDF FMM1062ML FMM1062ML FCSI0598M200
demultiplexer ic

Abstract: Fujitsu IR c code 2.5gb fmm382cg FMM382DG
Text: . The GaAs die is attched into advanced 24-pin metal/ceramic flat package designed for high speed applicaton. DG FUJITSU FMM382CG/DG _ 2.5Gb/s GaAs 1:4 Demultiplexer IC ABSOLUTE MAXIMUM RATINGS Rating , S1 So 1 1 Edition 1.0 March 1999 FUJITSU FMM382CG/DG _ 2.5Gb/s GaAs 1:4 Demultiplexer IC CG , 2.5Gb/s GaAs _ 1:4 Demultiplexer IC FMM382CG/DG FEATURES • High speed operation up to 2.7 , FMM382DG are high speed GaAs 1:4 demultiplexer ICs for multi-gigabit optical communication systems and


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PDF FMM382CG/DG 24-pin FMM382CG FMM382DG FCSI0199M200 demultiplexer ic Fujitsu IR c code 2.5gb
1999 - demultiplexer ic

Abstract: FMM382CG FMM382DG
Text: : (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide ( GaAs , 2.5Gb/s GaAs 1:4 Demultiplexer IC FMM382CG/DG FEATURES · · · · · · CG High speed , FMM382DG are high speed GaAs 1:4 demultiplexer ICs for multi-gigabit optical communication systems and , signals. The GaAs die is attched into advanced 24pin metal/ceramic flat package designed for high speed applicaton. Edition 1.0 March 1999 1 2.5Gb/s GaAs 1:4 Demultiplexer IC FMM382CG/DG ABSOLUTE


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PDF FMM382CG/DG 24-pin FMM382CG FMM382DG FCSI0199M200 demultiplexer ic
1999 - demultiplexer ic

Abstract: fmm382cg
Text: : (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide ( GaAs , 2.5Gb/s GaAs 1:4 Demultiplexer IC FMM382CG/DG FEATURES · · · · · · CG High speed , FMM382DG are high speed GaAs 1:4 demultiplexer ICs for multi-gigabit optical communication systems and , signals. The GaAs die is attched into advanced 24pin metal/ceramic flat package designed for high speed applicaton. Edition 1.0 March 1999 1 2.5Gb/s GaAs 1:4 Demultiplexer IC FMM382CG/DG ABSOLUTE


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PDF FMM382CG/DG 24-pin FMM382CG FMM382DG FCSI0199M200 demultiplexer ic
FMM5202ML

Abstract: mmic marking 255 MMic Marking 3 fujitsu oscillator mmic marking A FMM5202M FMM5107VD FMM5202 FUJITSU XBAND FMM5107
Text: Applications DESCRIPTION The FMM5202ML is a GaAs single frequency oscillator MMIC with low phase noise for use in X-Band DBS applications. It is designed to operate with the FMM5107VD downconverter MMIC. Fujitsu , : ML Notes: (1) Measurements are performed in a Fujitsu test circuit as shown in Figure 1. (2) The , in Figure 2 for measuring phase noise uses a 10kHz offset frequency. (3) The package marking "FFEP" , ) "E" indicates the year (1997) "P" indicates the month (April) Edition 1.1 August 1999 FUJITSU


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PDF FMM5202ML -90dBc/Hz FMM5107VD FCSI0598M200 mmic marking 255 MMic Marking 3 fujitsu oscillator mmic marking A FMM5202M FMM5202 FUJITSU XBAND FMM5107
HALF ADDER 74

Abstract: half adder ttl 8 bit half adder 74 mb53030 ECL NAND IMPLEMENTATION HALF ADDER Unbuffered LFP4 LDR3
Text: * * September 1990 Edition 2.0 DATA SH EET c P FUJITSU MB53xxx FURY uSeries GaAs Gate Arrays The Fujitsu FURY gate array series incorporates Fujitsu 's 0.8-micron GaAs self-aligned gate , Semiconductor Corporation, U.S.A. F U R Y Series GaAs Gate Arrays Fujitsu Microelectronics, Inc. 30K , Series GaAs Gate Arrays Fujitsu Microelectronics, Inc. REPRESENTATIVE MACROCELL PERFORMANCE All , Inverter, Unbuffered Function Basic Cells 8 8 4 12 2 5 F U R Y Series GaAs Gate Arrays Fujitsu


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PDF MB53xxx D-6000 OVO-094F2 HALF ADDER 74 half adder ttl 8 bit half adder 74 mb53030 ECL NAND IMPLEMENTATION HALF ADDER Unbuffered LFP4 LDR3
GSC371BAL2000

Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 RO3010 fujitsu rf power amplifier l band soshin
Text: 1930-1990MHz PCS band using the Fujitsu FLL400IP-2 GaAs FET is presented. Full circuit design details as well as the measured results for both Class A and AB operation are provided. FUJITSU APPLICATION NOTE , circuit elements of the 40W amplifier are the Fujitsu FLL400IP-2, 40W power GaAs FET, two SHOSHIN balun , FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES · Meets CDMA ACP at Pout>8W · Easy


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PDF 1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 RO3010 fujitsu rf power amplifier l band soshin
CD 294

Abstract: FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
Text: .: Gain Compression Point - fujitsu July 1999 ß FLC257MH-6 C-Band Power GaAs FET POWER DERATING CURVE , )1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide ( GaAs ) which can , .: Gain Compression Point Edition 1.1 July 1999 fujitsu FLC257MH-6 C-Band Power GaAs FET POWER , 8000 .814 161.6 .810 -16.0 .025 -44.4 .825 160.9 fujitsu FLC257MH-6 C-Band Power GaAs FET Case , :+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide ( GaAs


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PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
m381

Abstract: No abstract text available
Text: 1.0 March 1999 FUJITSU FM M381 CG/DG 2.5Gb/s GaAs 4:1 Mu Iti plexer IC ABSOLUTE MAXIMUM RATINGS , Data ZXZZXHXHXHXHXlôDŒi ' Edition 1.0 March 1999 FUJITSU FMM381 CG/DG 2.5Gb/s GaAs 4:1 M ulti plexer , 1999 2.5Gb/s GaAs 4:1 Mu Iti plexer IC FM M381 CG/DG For further information please contact: FUJITSU , 2.5Gb/s GaAs 4:1 Mu Iti plexer IC FMM381CG/DG FEATURES • High speed opération up to 2.7 GHz from , -pin Hermatic Fiat Package DESCRIPTION The FMM381CG and FMM381DG are high speed GaAs 4:1 multiplexer ICs for


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PDF FMM381CG/DG 24-pin FMM381CG FMM381DG 24-pwing FCSI0199M200 m381
FUJITSU MICROWAVE

Abstract: No abstract text available
Text: - 6.0 GHz Output Power Po 0 4 - dBm CASE STYLE: VJ Edition 1.1 August 1999 FUJITSU FMM1061VJ GaAs , lOOOpF |—O OUTPUT 50Q 1000pF _ |—O OUTPUT 50Q FUJITSU FMM1061VJ GaAs MMIC INPUT SENSITIVITY , CQ "O o CL 3 Q. -i—i o 1 2 3 4 5 6 7 Input Frequency (GHz) FUJITSU FMM1061VJ GaAs MMIC Case Style , Fujitsu Compound Semiconductor Products contain gallium arsenide ( GaAs ) which can be hazardous to the , FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz _ • Input Frequency divide by 4, OUT and


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PDF FMM1061VJ SMT-10 FCSI0598M200 FUJITSU MICROWAVE
FMM110VJ

Abstract: No abstract text available
Text: FUJITSU FMM110VJ GaAs MMIC Test Circuit Positive Supply Voltage Vqd = +5V Operation Circuit 1000pF , 50Q VSS = -5.0V FUJITSU FMM110VJ GaAs MMIC 3 FUJITSU FMM110VJ GaAs MMIC Case Style "VJ" LEAD , FMM110VJ GaAs MMIC FEATURES • Operation to 10 GHz _ • Input Frequency divide by 8, OUT , GaAs Microwave Static Frequency Divider designed for dividing an input signal by 8 over a frequency , Oscillator applications. Fujitsu 's stringent Quality Assurance Program assures the highest reliability and


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PDF FMM110VJ SMT-10 FMM110VJ FCSI0598M200
2004 - fujitsu gaas fet

Abstract: FLL410IK-3C fujitsu GHz gaas fet Fujitsu Quantum Devices fujitsu gaas fet L-band ED-4701
Text: High Power GaAs FET For further information please contact : CAUTION FUJITSU COMPOUND , FLL410IK-3C L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain , DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 ­ 2.7 , excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu , GaAs FET VDS=12V, IDS(DC)=3A 48 48 Pin=36dBm 46 80 Output Power [dBm] 42 40


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PDF FLL410IK-3C FLL410IK-3C fujitsu gaas fet fujitsu GHz gaas fet Fujitsu Quantum Devices fujitsu gaas fet L-band ED-4701
L9110

Abstract: Laser burning FMM311CG FMM311DG FCSI
Text: Temperature Tstg -55 to 125 °C Edition 1.0 March 1999 FUJITSU FMM311 CG/DG 2.5Gb/s GaAs Laser Driver , Monitor Adjustment Adjustment FUJITSU Edition 1.0 March 1999 2.5Gb/s GaAs Laser Driver FMM311 CG/DG , 1.0 March 1999 FUJITSU FMM311 CG/DG 2.5Gb/s GaAs Laser Driver ELECTRICAL OUTPUT WAVEFORM Pulse , 2.5Gb/s GaAs Laser Driver FMM311 CG/DG For further information please contact: FUJITSU COMPOUND , 2.5Gb/s GaAs Laser Driver FMM311 CG/DG FEATURES • Operation DC to 2.7 Gbit/s, NRZ â


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PDF FMM311 24-pin FMM311CG FMM311DG FCSI0199M200 L9110 Laser burning FCSI
fujitsu gaas fet

Abstract: FSU01LG
Text: . Edition 1.2 July 1999 G.C.P.: Gain Compression Point FUJITSU FSU01LG General Purpose GaAs FET POWER , .687 -50.3 22.9 .681 -52.8 20.9 .674 -55.3 19.4 .668 -58.0 FUJITSU FSU01LG General Purpose GaAs FET , FUJITSU FSU01LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 , FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm (Typ.) â , DESCRIPTION The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a


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PDF FSU01LG 190dB 12GHz FSU01LG FCSI0598M200 fujitsu gaas fet
Not Available

Abstract: No abstract text available
Text: 1999 fujitsu FMM3191DG 2.5Gb/s GaAs Laser Driver ELECTRICAL CHARACTERISTICS (Tc=25°C, VSS=-5.2V, RL , Temperature TC 0 - +65 °c Fujitsu Edition 1.0 March 1999 2.5Gb/s GaAs Laser Driver FMM3191DG FMM3191DG Ml-Laser Block Diagram Ml-Laser Edition 1.0 March 1999 fujitsu 2.5Gb/s GaAs Laser Driver FMM3191DG , 1.0 March 1999 FMM3191DG 2.5Gb/s GaAs Laser Driver For further information please contact: FUJITSU , 2.5Gb/s GaAs Laser Driver FMM3191DG FEATURES • Operation DC to 2.5 Gbit/s, NRZ • Peak to Peak


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PDF FMM3191DG 24-pin FMM3191 FCSI0199M200
Not Available

Abstract: No abstract text available
Text: .115 117.5 .216 -55.4 FUJITSU FLM1414-4F Internally Matched Power GaAs FET Case Style , CAUTION Fujitsu Com pound Sem iconductor Products contain gallium arsenide ( GaAs ) which can be hazardous , F L M 1 4 1 4 - 4 F Internally Matched Power GaAs FET FEATURES â , GaAs FET that is internally matched for standard communication bands to provide optimum power and gain , €œ CO Total Power Dissipation -65 to +175 Channel Temperature Tch 175 Fujitsu recom m


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PDF -46dBc@ FLM1414-4F FCSI0598M200
2003 - FLU10

Abstract: fujitsu flu fujitsu gaas fet L-band pae100
Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High , FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , . Fujitsu 's stringent Quality Assurance Program assures the highest reliability and consistent performance , 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power , FLU10ZM L-Band Medium & High Power GaAs FET S-PARAMETER +50 j 10 25 50 +10j 1.0 +2 50j


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PDF FLU10ZM FLU10ZM FCSI0202M200 FLU10 fujitsu flu fujitsu gaas fet L-band pae100
FLC317MG-4

Abstract: S211 fujitsu gaas fet
Text: FLC317MG-4 - C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.8dBm(Typ.) â , /Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu , Tstg -65 to +175 °c Channel Temperature TCh 175 °c Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vpg) should not


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PDF FLC317MG-4 FLC317MG-4 FCSI0598M200 S211 fujitsu gaas fet
Not Available

Abstract: No abstract text available
Text: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High , Hermetically Sealed DESCRIPTION The FLM1414-8F is a power GaAs FET that is internally matched for standard , Temperature Tch 175 Fujitsu recom m ends th e follow ing conditions for the reliable operation o f GaAs FETs: 1. The drain-source operating voltage (V q s ) should not exceed 10 volts. 2. The forw ard , C om pression Point, S .C .L.: Single C arrier Level FUJITSU FLM1414-8F Internally Matched


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PDF FLM1414-8F -46dBc FLM1414-8F FCSI0598M200
1998 - FMM1061VJ

Abstract: No abstract text available
Text: CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide ( GaAs ) which can be hazardous , FMM1061VJ GaAs MMIC FEATURES · Operation to 6.0 GHz · Input Frequency divide by 4, OUT and OUT , Hermetic SMT-10 Package (VJ) · Tape and Reel available DESCRIPTION The FMM1061VJ is a GaAs Microwave , applications. Fujitsu 's stringent Quality Assurance Program assures the highest reliability and consistent , Typ. Max. - Condition Symbol 4 - dBm Min. FMM1061VJ GaAs MMIC Test


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PDF FMM1061VJ SMT-10 FMM1061VJ FCSI0598M200
1998 - FMM1061VJ

Abstract: No abstract text available
Text: FMM1061VJ GaAs MMIC FEATURES · Operation to 6.0 GHz · Input Frequency divide by 4, OUT and OUT , Hermetic SMT-10 Package (VJ) · Tape and Reel available DESCRIPTION The FMM1061VJ is a GaAs Microwave , applications. Fujitsu 's stringent Quality Assurance Program assures the highest reliability and consistent , Symbol 4 - dBm Min. FMM1061VJ GaAs MMIC Test Circuit Positive Supply Voltage VDD , GaAs MMIC INPUT SENSITIVITY CHARACTERISTICS Vss = -5.0V, Ta = 25¡C RECOMMENDED OPERATING


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PDF FMM1061VJ SMT-10 FMM1061VJ FCSI0598M200
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