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Part Manufacturer Description Datasheet Download Buy Part
ISL6146BFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146BFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146EFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146BFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146BFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146EFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C

fujitsu gaas fet Datasheets Context Search

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CD 294

Abstract: FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
Text: .: Gain Compression Point - fujitsu July 1999 ß FLC257MH-6 C-Band Power GaAs FET POWER DERATING CURVE , .: Gain Compression Point Edition 1.1 July 1999 fujitsu FLC257MH-6 C-Band Power GaAs FET POWER , 8000 .814 161.6 .810 -16.0 .025 -44.4 .825 160.9 fujitsu FLC257MH-6 C-Band Power GaAs FET Case , Compression Point Edition 1.1 July 1999 fujitsu FLC257MH-6 C-Band Power GaAs FET POWER DERATING CURVE , .828 134.3 .569 -9.3 .023 -40.1 .846 143.4 fujitsu FLC257MH-8 C-Band Power GaAs FET Case Style


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PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLK017XP FLL400IP-2 hemt low noise die FLL120 FLK102MH-14 Fujitsu GaAs FET Amplifier S211
2003 - FLU10

Abstract: fujitsu flu fujitsu gaas fet L-band pae100
Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High , FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power , FLU10ZM L-Band Medium & High Power GaAs FET S-PARAMETER +50 j 10 25 50 +10j 1.0 +2 50j , Power GaAs FET OUTPUT POWER & DRAIN CURRENT vs. INPUT POWER with a wide band tuning condition. @ VDS =


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PDF FLU10ZM FLU10ZM FCSI0202M200 FLU10 fujitsu flu fujitsu gaas fet L-band pae100
2004 - fujitsu gaas fet

Abstract: FLL410IK-3C fujitsu GHz gaas fet Fujitsu Quantum Devices fujitsu gaas fet L-band ED-4701
Text: High Power GaAs FET For further information please contact : CAUTION FUJITSU COMPOUND , FLL410IK-3C L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain , DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 ­ 2.7 , GaAs FET VDS=12V, IDS(DC)=3A 48 48 Pin=36dBm 46 80 Output Power [dBm] 42 40 , FLL410IK-3C L-Band High Power GaAs FET S-PARAMETER +90° +50j +100j +25j +250j +10j


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PDF FLL410IK-3C FLL410IK-3C fujitsu gaas fet fujitsu GHz gaas fet Fujitsu Quantum Devices fujitsu gaas fet L-band ED-4701
2003 - IM320

Abstract: fujitsu flu fujitsu gaas fet L-band
Text: L-Band Medium & High Power GaAs FET For further information please contact : FUJITSU COMPOUND , FLU17ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm(typ , The FLU17ZM is a GaAs FET designed for base station and CPE applications. This is a new product , 2003 1 FLU17ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Output Power , POWER & POWER ADDED EFFICIENCY vs. INPUT POWER FLU17ZM L-Band Medium & High Power GaAs FET


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PDF FLU17ZM FLU17ZM FCSI0202M200 IM320 fujitsu flu fujitsu gaas fet L-band
fujitsu gaas fet

Abstract: FSU01LG
Text: . Edition 1.2 July 1999 G.C.P.: Gain Compression Point FUJITSU FSU01LG General Purpose GaAs FET POWER , .687 -50.3 22.9 .681 -52.8 20.9 .674 -55.3 19.4 .668 -58.0 FUJITSU FSU01LG General Purpose GaAs FET , FUJITSU FSU01LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 , FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm (Typ.) â , DESCRIPTION The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a


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PDF FSU01LG 190dB 12GHz FSU01LG FCSI0598M200 fujitsu gaas fet
2004 - fujitsu gaas fet

Abstract: FLL410IK-4C fujitsu gaas fet L-band ED-4701 Quantum Devices fujitsu GHz gaas fet
Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain , DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 ­ 3.7 , =100pF, R=1.5k) Edition 1.1 Oct 2003 44 - 1 FLL410IK-4C L-Band High Power GaAs FET OUTPUT , Power GaAs FET S-PARAMETER +90° +50j +100j +25j +250j +10j 3.6GHz 3. H z 6G , -27.76 0.40 -43.35 0.42 -58.31 S 12 S 21 FLL410IK-4C L-Band High Power GaAs FET BOARD


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PDF FLL410IK-4C FLL410IK-4C fujitsu gaas fet fujitsu gaas fet L-band ED-4701 Quantum Devices fujitsu GHz gaas fet
1998 - fujitsu gaas fet

Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull , . Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a , ¡C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The , 1 FLL1200IU-2 L-Band Medium & High Power GaAs FET OUTPUT POWER & hadd vs. INPUT POWER 54 52 , 2.02 2.05 FLL1200IU-2 L-Band Medium & High Power GaAs FET OUTPUT POWER vs. IMD VDS = 12V IDS


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PDF FLL1200IU-2 FLL1200IU-2 FCSI0598M200 fujitsu gaas fet Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
fujitsu gaas fet

Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design FLL1500IU-2A fujitsu gaas fet L-band
Text: -2A L-Band High Power GaAs FET OUTPUT POWER & riadd vs. INPUT POWER OUTPUT POWER vs. FREQUENCY Frequency (GHz) FUJITSU FLL1500IU-2A _ L-Band High Power GaAs FET OUTPUT POWER vs. IMD FREQUENCY (MHZ) m Q , designs. ^^^ - FUJITSU FLL15001U-2A L-Band High Power GaAs FET Case Style "lU" JLjlJ -I' T nn=p , FLL1500IU-2A - L-Band High Power GaAs FET FEATURES • Push-Pull Configuration • High , €¢ Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a


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PDF FLL1500IU-2A FLL1500IU-2A FCSI0299M200 fujitsu gaas fet Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet L-band
Not Available

Abstract: No abstract text available
Text: .115 117.5 .216 -55.4 FUJITSU FLM1414-4F Internally Matched Power GaAs FET Case Style , F L M 1 4 1 4 - 4 F Internally Matched Power GaAs FET FEATURES â , GaAs FET that is internally matched for standard communication bands to provide optimum power and gain , pression Point, S.C .L.: S ingle C arrie r Level FLM1414-4F Internally Matched Power GaAs FET OUTPUT , -4F Internally Matched Power GaAs FET 21 31 2 S-PARAMETERS FREQUENCY (MHZ) S 11 MAG ANG V


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PDF -46dBc@ FLM1414-4F FCSI0598M200
FLC317MG-4

Abstract: S211 fujitsu gaas fet
Text: FLC317MG-4 - C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.8dBm(Typ.) â , /Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for general purpose , Compression Point -FUHTSU July 1999 ß FLC317MG-4 C-Band Power GaAs FET POWER DERATING CURVE DRAIN , 8 9 10 Drain-Source Voltage (V) Fujfrsu FLC317MG-4 C-Band Power GaAs FET -o— s. +j250 -j250 , FLC317MG-4 C-Band Power GaAs FET Case Style "MG" Metal-Ceramic Hermetic Package (0.709) w 14.0±0.2


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PDF FLC317MG-4 FLC317MG-4 FCSI0598M200 S211 fujitsu gaas fet
Not Available

Abstract: No abstract text available
Text: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High , Hermetically Sealed DESCRIPTION The FLM1414-8F is a power GaAs FET that is internally matched for standard , Power GaAs FET OUTPUT POWER & IM3 vs. INPUT POWER Total Power Dissipation (W) o m T3 O co , ) 34 il add (%) 39 V d S=10V - P 1 dB FLM 1414-8F Internally Matched Power GaAs FET , GaAs FET Case Style "IA" Metal-Ceramic Hermetic Package For further inform ation please contact


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PDF FLM1414-8F -46dBc FLM1414-8F FCSI0598M200
1998 - FLL1200IU-2

Abstract: Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet
Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull , . Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a , Tch +175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs , STYLE: IU Edition 1.7 December 1999 1 FLL1200IU-2 L-Band Medium & High Power GaAs FET , ) 52 FLL1200IU-2 L-Band Medium & High Power GaAs FET OUTPUT POWER vs. IMD VDS = 12V IDS = 5.0A


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PDF FLL1200IU-2 FLL1200IU-2 FCSI0598M200 Fujitsu GaAs FET Amplifier Fujitsu GaAs FET Amplifier design fujitsu gaas fet
FLL57MK

Abstract: fll57 fujitsu gaas fet L-band fujitsu gaas fet
Text: 151.1 FUJITSU FLL57MK L-Band Medium & High Power GaAs FET Case Style "MK" Metal-Ceramic Hermetic , FLL57MK _ L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB = 36.0dBm , • Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically , TCh 175 °c Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1 , FLL57MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE


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PDF FLL57MK FLL57MK FCSI0598M200 fll57 fujitsu gaas fet L-band fujitsu gaas fet
1999 - Fujitsu GaAs FET Amplifier design

Abstract: FLL1500IU-2A FLL1500 Fujitsu GaAs FET Amplifier
Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design , 2.2 Frequency (GHz) 2 2.3 2.4 FLL1500IU-2A L-Band High Power GaAs FET OUTPUT POWER , Push-Pull S-Parameter amplifier designs. 3 FLL1500IU-2A L-Band High Power GaAs FET Case Style "IU" , CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide ( GaAs ) which can be hazardous


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PDF FLL1500IU-2A FLL1500IU-2A FCSI0299M200 Fujitsu GaAs FET Amplifier design FLL1500 Fujitsu GaAs FET Amplifier
fujitsu gaas fet

Abstract: FLC257MH-8
Text: Compression Point Edition 1.1 July 1999 FUJITSU FLC257MH-8 C-Band Power GaAs FET POWER DERATING CURVE 16 , .828 134.3 .569 -9.3 .023 -40.1 .846 143.4 FUJITSU FLC257MH-8 C-Band Power GaAs FET Case Style , _ FLC257MH-8 - C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) â , /Ceramic Package DESCRIPTION The FLC257MH-8 is a power GaAs FET that is designed for general purpose , ) FLC257MH-8 C-Band Power GaAs FET S-PARAMETERS VDS = 10V, lDS = 600mA lEQUENCY S11 S21


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PDF FLC257MH-8 FLC257MH-8 FCSI0598M200 fujitsu gaas fet
fujitsu gaas fet

Abstract: FLC257MH-6 QW12
Text: .: Gain Compression Point Edition 1.1 July 1999 FUJITSU FLC257MH-6 C-Band Power GaAs FET POWER , 8000 .814 161.6 .810 -16.0 .025 -44.4 .825 160.9 FUJITSU FLC257MH-6 C-Band Power GaAs FET Case , _ FLC257MH-6 - C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) â , /Ceramic Package DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general purpose , FLC257MH-6 C-Band Power GaAs FET S-PARAMETERS VDS = 10V, lDS = 600mA EQUENCY S11 S21


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PDF FLC257MH-6 FLC257MH-6 FCSI0598M200 fujitsu gaas fet QW12
FLK017WF

Abstract: fujitsu gaas fet
Text: FUJITSU FLK017WF X, Ku Band Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE , FLK017WF X, Ku Band Power GaAs FET FEATURES • High Output Power: P1dB = 20.5dBm(Typ.) â , /Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose , ) Fujfrsu FLK017WF X, Ku Band Power GaAs FET S-PARAMETERS VDS = 10V, lDS = 40mA FREQUENCY (MHZ) MAG S11 , FLK017WF X, Ku Band Power GaAs FET Case Style "WF" Metal-Ceramic Hermetic Package 01,6±0.01 [ 0.1 Â


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PDF FLK017WF FLK017WF FCSI0598M200 fujitsu gaas fet
2003 - fujitsu flu

Abstract: fujitsu gaas fet L-band
Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm(typ.) High , FLU35ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU35ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE OUTPUT POWER , ] 25 FLU35ZM L-Band Medium & High Power GaAs FET S-PARAMETER +90° +50 j +2 5j +100 j 10 , 0.77 156.46 0.78 151.30 S 12 S 21 FLU35ZM L-Band Medium & High Power GaAs FET OUTPUT POWER


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PDF FLU35ZM FLU35ZM FCSI0202M200 fujitsu flu fujitsu gaas fet L-band
1998 - Not Available

Abstract: No abstract text available
Text: FSX017WF General Purpose GaAs FET FEATURES · · · · Medium Power Output: P1dB=21.5dB (Typ , DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz , ¡C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source , 1 FSX017WF General Purpose GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE , General Purpose GaAs FET +j50 +j25 18 12 14 S11 S22 +j100 2 +90¡ S21 S12 20 4 +j10 16


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PDF FSX017WF FSX017WF 12GHz. FCSI0598M200
1998 - FSX017X

Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES · Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz · High , purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic , ) G.C.P.: Gain Compression Point Edition 1.1 July 1999 1 FSX017X GaAs FET & HEMT Chips POWER , Input Power (dBm) Drain-Source Voltage (V) 2 FSX017X GaAs FET & HEMT Chips S-PARAMETERS VDS , Au wire) Source n=4 (0.2mm length, 25µm Dia Au wire) 3 FSX017X GaAs FET & HEMT Chips CHIP


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PDF FSX017X FSX017X 12GHz. FCSI0598M200
fujitsu hemt

Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips
Text: )=(2/3) Edition 1.1 July 1999 G.C.P.: Gain Compression Point FUJITSU FSX017X GaAs FET & HEMT , FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm(Typ.)@8.0GHz â , purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic , 4 5 6 7 8 Drain-Source Voltage (V) Fujfrsu FSX017X GaAs FET & HEMT Chips FREQUENCY S11 (MHZ , FSX017X GaAs FET & HEMT Chips CHIP OUTLINE Die Thickness: 100±20nm For further information please


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PDF FSX017X FSX017X 12GHz. FCSI0598M200 fujitsu hemt fujitsu gaas fet GaAs FET HEMT Chips
1998 - FSU02LG

Abstract: v 4836 fujitsu GHz gaas fet
Text: FSU02LG General Purpose GaAs FET FEATURES · High Output Power: P1dB = 23.0dBm (Typ.)@2GHz · , DESCRIPTION The FSU02LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a , x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs , FSU02LG General Purpose GaAs FET ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT NOISE FIGURE vs , S-Parameters, click here 3 FSU02LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Package


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PDF FSU02LG FSU02LG FCSI0598M200 v 4836 fujitsu GHz gaas fet
1998 - FLC097WF

Abstract: No abstract text available
Text: FLC097WF C-Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 28.8dBm (Typ , Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general purpose , Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs , Breakdown Voltage Min. G.C.P.: Gain Compression Point 1 FLC097WF C-Band Power GaAs FET DRAIN , Power GaAs FET S11 S22 +j50 8 7 +j100 9 10 6 11 12 5 +j10 0 +j250 12


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PDF FLC097WF FLC097WF FCSI0598M200
1998 - FLM1414-3F

Abstract: No abstract text available
Text: FLM1414-3F Internally Matched Power GaAs FET FEATURES · · · · · · · High Output Power , DESCRIPTION The FLM1414-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsu 's stringent Quality Assurance Program , -3F Internally Matched Power GaAs FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER 20 10 , -3F Internally Matched Power GaAs FET 1.5 Min. (0.059) Case Style "IA" Metal-Ceramic Hermetic Package


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PDF FLM1414-3F 35dBm -46dBc FLM1414-3F FCSI0598M200
1998 - fujitsu GHz gaas fet

Abstract: No abstract text available
Text: FLM1414-3F Internally Matched Power GaAs FET FEATURES · · · · · · · High Output Power: P1dB = , The FLM1414-3F is a power GaAs FET that is internally matched for standard communication bands to , Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , Level Edition 1.3 December 2003 1 FLM1414-3F Internally Matched Power GaAs FET POWER , add (%) 34 IM3 (dBc) -25 FLM1414-3F Internally Matched Power GaAs FET +j50 +j100 +j25


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PDF FLM1414-3F 35dBm -46dBc FLM1414-3F FCSI0598M200 fujitsu GHz gaas fet
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