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Part Manufacturer Description Datasheet Download Buy Part
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver
LTC4444-5EMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver
LTC4444-5EMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver
LTC4440ES6-5#PBF Linear Technology IC 1.1 A BUF OR INV BASED MOSFET DRIVER, PDSO6, 1 MM, LEAD FREE, PLASTIC, MO-193, SOT-23, 6 PIN, MOSFET Driver
LT1336IN#TRPBF Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, LEAD FREE, PLASTIC, DIP-16, MOSFET Driver

free transistor equivalent book 2sc Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
A933A

Abstract: No abstract text available
Text: Transistors General Purpose Transistor (-50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS , 2SA1576A 2) Com plem ents the 2SC2412K/ 2SC40S1 / 2SC 4617/ 2SC 1740S. ·S tru c tu re Epitaxial planar type PNP silicon transistor | .0 .9 5 0 .B 5 .| (¿ -¡¡à 0 .B ± 0 .1 J3 H: 1 .3 ± 0 .1 0 , reproduction of this book , either in w hole or in part, is permitted. # The contents of this book are subject , free from infringem ent of any third party's intellectual property rights or other proprietary rights


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PDF 2SA1037AK 2SA1576A 2SA1774 2SA933AS 2SA1576A 2SC2412K/ 2SC40S1 4617/2SC 1740S. A933A
A854S

Abstract: No abstract text available
Text: Transistors Medium Power Transistor (-32V, - 0.5A) 2SA1036K/2SA1577/2SA854S · F e a tu re s 1 , ) Com plem ents the 2SC 2411K/ 2SC1741S/2SC4097. · S tru c tu re Epitaxial planar type PNP silicon transistor 0.0 ± 0.1 1.3+0.1 0.65 0.65 "E l 4 +0.1 " i: -O .O S All terminals have same , March 1997. No unauthorized transm ission or reproduction of this book , either in whole or in part, is permitted. # The contents of this book are subject to change without notice. Always verify before use that


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PDF 2SA1036K/2SA1577/2SA854S 2SA1036K 2SA1577 --500mA 2411K/ 2SC1741S/2SC4097. SC-59 SC-70 A854S
SC4081

Abstract: 2SA933A
Text: Transistors General Purpose Transistor (50V, 0.15A) 2SC2412K/2SC4081/2SC4617/2SC1740S · , c tu re Epitaxial planar type NPN silicon transistor mo) All term inais have sam e dim ensions . , frequency Output capacitance Symbol B V cbo B V ceo B V ebo ICBO (ESO hFE 2SC2412 K/2 SC4081/ 2SC 4617 , arch 1997. No unauthorized transm ission or reproduction of this book , either in whole or in part, is permitted. # The contents of this book are subject to change without notice. Always verify before use that


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PDF 2SC2412K/2SC4081/2SC4617/2SC1740S 2SA1037AK/ 2SA1576A/2SA1774/2SA933AS. 2SC2412K 2SC4081 SC-59 SC-70 2SC4617 2SC1740S SC4081 2SA933A
Not Available

Abstract: No abstract text available
Text: Transistors 2SA1834 2SC5001 Low V ce (sat) Transistor (- 20V, - 10A ) (DC-DC , M H z (96-106-021 7 ) I Low V ce (sat) Transistor (Strobe flash) · A b s o l u t e m , I c o rd e rin g u n it (p ie c e s ) 2SC 5001 CPT3 OR TL 2500 B ase c u rre n t C o lle c to r p , this catalogue are correct as of March 1997. No unauthorized transmission or reproduction of this book , either in whole or in part, is permitted. The contents of this book are subject to change without notice


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PDF 2SA1834 2SC5001 5A/10m
72am

Abstract: T 1892 equivalent 72am motor burr-brown 3572AM E3571
Text: 2S°C Case Temperature Derating Above 25°C Thermal Resistance, Case to Free Air Thermal Time Constant , : 910-962-1111 - Cable: RBRCORP Telai: 66-6491 P D S - JJ4 C Burr-Brown 1C Data Book 2-237 Vol. 33 , suited for drivin g permanent magnet D C servo and torque motors. T he equivalent circuit for the 3 5 , output voltage and current and makes the am p li Burr-Brown 1C Data Book 2-238 Vol. 33 SPECIFICATIONS ELECTRICAL Typical at T c m = 2S°C and ±V cc = 135VDC max unless otherwise noted. MODELS RATED


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PDF 746-l 72am T 1892 equivalent 72am motor burr-brown 3572AM E3571
Not Available

Abstract: No abstract text available
Text: Amplifier Transistor , RF switching 2SC4997 / 2SC4998 •Feature« •A b s o lu te maximum ratings , V C ollector current 2SC 4997 P ac kag e 15 E m itter-base voHage Type Limits , llector-base voltage Ic 2S C 4997 C ollector pow er dissipation 2SC 4996 2S C 4998 EM T3 UM , , f = 1 M H z (SPEC-C131) High-frequency Amplifier Transistor (25V, 300MHz) I 2SC4618 / 2SC4098 , current •P a c ka g in g specifications and hre Typs 2SC 4618 P a ck ag e EM T3 UM T3


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PDF 2SC4997 2SC4998 2SC4618 2SC4098 2SC2413K 2SC2058S 240MHz) 0Dlb713
9At TRANSISTOR

Abstract: B0240B
Text: 2S°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current Customer-Specified Selections Available TO-220 PA C KA G E (TO P V IEW ) absolute maximum ratings at 2S°C case temperature , °C free a ir temperature (see Note 3) Unciam ped inductive load energy (see Note 4) Operating junction tem , rate of 0.24 W.^C. Derate linearly to 1 5 0 X free air temperature at the rate of 16 mW/°C. This rating is based on the ca p a city of the transistor to operate safety In a circuit of: I = 20 mH, lB{on


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PDF BD240, BD240A, B0240B, BD240C BD241 O-220 BD240 BD240A BD240B 9At TRANSISTOR B0240B
transistor 8831

Abstract: 19500 TRANSISTOR 50A
Text: field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed , . Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Harris Semiconductor High-Reliability , /W V ns V nc Free Air Operation - 30 E L E C T R O N IC SW IT C H O P E N S W H EN lA s , CIRCUIT 4-34 FRK160D, FRK160R, FRK160H Post-Radiation Electrical Specifications tc = + 2s°c


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PDF FRK160D, FRK160R, FRK160H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD AN-8831, transistor 8831 19500 TRANSISTOR 50A
Not Available

Abstract: No abstract text available
Text: enhancement-mode siiicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially , shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Harris Semiconductor , Ratings (TC = + 2S°C ) Unless Otherwise Specified Draln-Source Voltage , VGP QGS QGD VSD TT R0jc R9ja Free Air Operation ID = 27A, VGD = 0 I = 27A; di/dt = 100A/|is VDD = 100V


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PDF FRK250D, FRK250R, 100tl 100KRAD 300KRAD 1000KRAD 3000KRAD AN-8831,
2000 - all mosfet equivalent book

Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
Text: . 36 Rev D, July 2000 1 The Bipolar Power Transistor (BPT), as a switching device for power , Semiconductor Field Effect Transistor ). The power MOSFET is used in many applications such as SMPS (Switched , improvement have provided it with ideal characteristics for replacing the BJT (Bipolar Junction Transistor , from FSC's data book specifications. 1. History of Power MOSFETs The theory behind Field Effect Transistor has been known since 1920~1930, which is 20 years before the Bipolar Junction Transistor was


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PDF AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
equivalent transistor n 4212

Abstract: equivalent transistor 4212
Text: transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal , either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Hams Semiconductor High-Reliability Marketing group for any desired , HARD TRANSISTORS FRF92S0D, FRF9250R, FRF9250H Pre-Radiation Electrical Specifications t c = + 2s°c , VGP QGS QGD VSD TT R6jc R9ja Free Air Operation ID = 14A, VGD = 0 I = 14A; di/dt = 100A/|is VDD =


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PDF FRF9250D, FRF9250R, FRF9250H -200V, O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD equivalent transistor n 4212 equivalent transistor 4212
Not Available

Abstract: No abstract text available
Text: silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and , . Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S19500. Contact the Harris Semiconductor High-Reliability , + 2S»C . PT TC = , -100Afys 0.6 ·-.i V ns , Free Air Operation - El b OlS BVDSS V C .0.75 BVDSS FIGURE 1


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PDF FRL430 2N7281D, 2N7281R 2N7281H 100KRAD 300KRAD 1000KRAD 3000KRAD 004S703
all mosfet equivalent book

Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V MOSFET 800V 10A P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet n Power mosfet depletion MOSFET N-CH 200V
Text: . 38 Rev C, November 1999 1 The Bipolar Power Transistor as a switching device for a power , Semiconductor Field Effect Transistor ). Power MOSFET is being used in many applications such as SMPS, computer , presentation of items of FSC's data book specification. 1. History of Power MOSFETs The theory of Field Effect Transistor had been advent around 1920~1930 which is 20 years before the Bipolar Junction Transistor has been invented, which is from 1940's and through early 1950s. At that time J.E. Lilienfeld of


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PDF AN9010 all mosfet equivalent book P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V MOSFET 800V 10A P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet n Power mosfet depletion MOSFET N-CH 200V
BUT14

Abstract: SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
Text: Darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where , Continuous - Peak(11 IB •bm 5 7.5 Ade Free Wheel Diode: Forward current - Continuous - Peak IF ifm 25 35 , * 12 Test Equipment Scope Tektront* 475 Of Equivalent FIGURE 6 - FALL TIME vs IB2/IB1 FIGUHE 7 - , » &25A IC »H - 2SC '•III - 5 V 3 4 S B 7 BT FORCEO CAIN 3-402 MOTOROLA SC , FREE WHEEL DIODE MEASUREMENTS FIGURE 11 - FORWARD VOLTAGE 'tis • s / / '7' / / â


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PDF 33t3755M BUT14 BUT14 SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
THT bsc 25

Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 sm 0038 3408 diode M70 IBM
Text: Darlington transistor is' designed for high-voltage, high-speed, power switching In inductive circuits where , Ade Free Wheel Diode: Forward current - Continuous - Peak IF 'fm 20 25 Ade Total Power Dissipation , » Vclamp Test Equipment Scope • Tefct/ontx 475 or Equivalent FIGURE 6 - FALL TIME vs IB2/IB1 FIGURE 7 - , CHARACTERISTICS FIGURE 10 - FREE WHEEL DIODE MEASUREMENTS IFM d dt • 25A/jS 'SIM FIGURE 11 - FORWARD VOLTAGE , MODULATION VOLTAGE 30 FIGURE 13 - PEAK REVERSE RECOVERY CURRENT TC- 2S"C


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PDF BUT15 THT bsc 25 but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 sm 0038 3408 diode M70 IBM
BOW24A

Abstract: No abstract text available
Text: and BDW24C 50 W at 2S°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 , ? 25C C case temperature {see Note t) Continuous device Æsstpatkm at (or below) 25°C free air , Iinearty to 150°C free air temperature at the rate ot 16 mW/°C. VEBO c *8 ^tot Pw Ti Tag Ta V CEO V CBO , electrical characteristics at 2S°C case temperature (unless otherwise noted) PARAMETER Collector-emitfer (BR , to free air thermal resistance resistive-load-switching characteristics at 25°C case temperature


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PDF BDW23, BDW23A, BDW23B, BDW23C BDW24, BOW24A, BDW24B BDW24C O-220 BDW23 BOW24A
1998 - LOT CODE NE NEC

Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC code marking NEC nec lot number on packing label hjfet mini mold transistor 25 C2H marking NEC PART NUMBER MARKING marking K gaas fet
Text: ORIENTATION In the part number of 2SC , NE, µPA (Discrete Transistor ) 24 24 24 24 "­T1" 24 , frequency semiconductors in `super minimold' are available in following parts; Discrete transistors 2SC ×××× (EIAJ number) NE××××× (World wide number) Silicon bipolar discrete transistor µPA8××T or µPA8××TB Silicon bipolar twin transistor NE×××18 GaAs FET, HJ-FET NE×××M01 GaAs FET, HJ-FET ICs , to ensure that the documentation supplied to our customers is complete, bug free and up-to-date, we


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PDF P10687EJ4V0IF00 us588-6130 LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC code marking NEC nec lot number on packing label hjfet mini mold transistor 25 C2H marking NEC PART NUMBER MARKING marking K gaas fet
a 1757 transistor

Abstract: A 1952 transistors a 1757 transistor 2SA 2SC5103 transistors 2SA rohm 2sa 1757 EM 5103
Text: Switching Transistor 2 S A 1 952 / 2 S A 1 906 / 2 S A 1 757 ·A b s o lu te maximum ratings (Ta-2813) P , ? - 3 0 V High-speed Switching Transistor I 2SC5103 / 2SC4596 ·F e a tu re s 1) 2) 3) 4) Low VcE , SO A (safe operating area) C om plem ents th e 2SA1952/2SA1757. Fif e 2SC 4596 T O -2 2 0 F P EF - , voltage Em itter-base voltage C ollector current 2SC 5103 Pc 2SC 4596 T] Tsta Sym bol Vceo V ceo V ebo Ic , * ·P ackaging specifications and T yp e P ac kag e tlFE C ode Basic ordering unit (pieces) 2SC 5103


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PDF 2SA1952 2SA1906 2SA1757 2SC5103 2SC4596 Ta--2813) 5103/2S O-220, 0Dlb713 O-220FN a 1757 transistor A 1952 transistors a 1757 transistor 2SA transistors 2SA rohm 2sa 1757 EM 5103
free transistor equivalent book

Abstract: free all transistor equivalent book DTD114ED
Text: resistors (see the equivalent c ir cuit). 2) The bias resistors consist of thinfilm resistors with complete , 2 ± 0.2 m Ì ·S tru ctu re NPN digital transistor (Built-in resistor type) Ü É 0.5 fl^ 1 , -55-150 300 S Unit V V mA mW °C "C · Equivalent circuit Ic Pd Tj Tstg (96-354-D 114E) 438 , * Transition frequency ot mounted transistor ·P acka ging specifications Package Package style Type Code , correct as of March 1997. No unauthorized transmission or reproduction of this book , either in whole or in


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PDF DTD114EK DTD114ES DTD114EK SC-59 free transistor equivalent book free all transistor equivalent book DTD114ED
free transistor equivalent book

Abstract: free all transistor equivalent book catalogue de transistor DTA124 124ESA rohm dtA124
Text: ) ·S tru ctu re PNP digital transistor (Built-in resistor type) Equivalent circuit IN O VvV , circuit without connecting external input resistors (see the equivalent cir cuit). 2) The bias resistors , - kO MHz 1 250 fr * Transition frequency ol mounted transistor ·P a cka g in g , transmission or reproduction of this book , either in whole or in part, is permitted. The contents of this book , diagrams and circuit constants contained in this data book are shown as examples of standard use and


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PDF DTA124 free transistor equivalent book free all transistor equivalent book catalogue de transistor 124ESA rohm dtA124
free transistor equivalent book

Abstract: free all transistor equivalent book
Text: resistors (se e th e equivalent cir cuit). 2) The bias resistors consist of thinfilm resistors with complete , aking de vice design easy. S tructure PNP digital transistor (Built-in resistor type) 0 .5. II,0-45 , mW S V Unit ^ Equivalent circuit Ri IN O V *r- OOUT -OG ND (+) G N D (+ ) °C °c , = -50mA - - Vce= -10V, lE=5mA,f=100MHz * Transition frequency of mounted transistor , reproduction of this book , either in whole or in part, is permitted. The contents of this book are subject to


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PDF DTB113ZK/DTB113ZS 0-45--O free transistor equivalent book free all transistor equivalent book
free transistor equivalent book

Abstract: free all transistor equivalent book transistor r3n
Text: resistors (see the equivalent c ir cuit) . 2) The bias resistors consist of thinfilm resistors with complete , aking de vice design easy. ·S tru ctu re PNP digital transistor (Built-in resistor type) ·E xte rn a l , Equivalent circuit ROHM : SPT EIAJ : SC-72 Q 'sJll0 r-^3_n (1) (2) 0 ) I ,.+ 0 .1 5 (1) GND (2 , = 100MHz * Transition frequency of mounted transistor ·P a cka g in g specifications Package Package , transmission or reproduction of this book , either in whole or in part, is permitted. The contents of this book


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PDF DTB143EK/DTB143EC/DTB143ES TB143E SC-59 free transistor equivalent book free all transistor equivalent book transistor r3n
2007 - 16Xe

Abstract: KAD2708C transistor 2sc 18 KAD2708L KAD2708L-27 KAD2708L-35 KAD2710L-27
Text: V Logic Inputs to OVSS (RST, 2SC ) -0.4 OVDD2 + 0.3 V VREF TO AVSS -0.4 AVDD3 + , Full Temp 7.3 7.8 Bits Spurious Free Dynamic Range SFDR Full Temp 63 68 dBc , 0.2*AVDD3 V 65 75 µA 1 10 µA 0.8*OVDD2 High Input Voltage (RST, 2SC ) RST, 2SC VIH Low Input Voltage (RST, 2SC ) RST, 2SC VIL Input Current High (RST, 2SC ) RST, 2SC IIH VIN = OVDD 0 Input Current Low (RST, 2SC ) RST, 2SC IIL VIN = OVSS 25 V Input


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PDF KAD2708C 275MSPS KAD2708C 275MSPS, 105MSPS 10-bit KAD2708L 68-pin ran85 2002/95/EC 16Xe transistor 2sc 18 KAD2708L-27 KAD2708L-35 KAD2710L-27
ECG semiconductor book free

Abstract: ST7511 lm358 4-20mA 0-10v to 4-20ma "Current to Voltage Converter" 4-20ma using LM358 ecg book of electronic parts ECG book ECG SEMICONDUCTOR DATA BOOK free all transistor equivalent book LM341A
Text: information on a ll CP Clare Products ask fo r our Data Book . CP Clare Corporation · Semiconductor Group · , on a ll CP Clare Products ask fo r o u r Data Book . CP Clare Corporation · Sem iconductor Group · , . Photoconductive Phase Response For detailed information on a ll CP Clare Products ask fo r our Data Book . CP , CP Clare Products ask fo r our Data Book . CP Clare Corporation · Sem iconductor Group · 78 Cherry , usually consists of a Darlington transistor , a resistor bias network, and a capacitor to provide AC


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PDF 1-800-CPCLARE ECG semiconductor book free ST7511 lm358 4-20mA 0-10v to 4-20ma "Current to Voltage Converter" 4-20ma using LM358 ecg book of electronic parts ECG book ECG SEMICONDUCTOR DATA BOOK free all transistor equivalent book LM341A
free all transistor equivalent book

Abstract: free transistor equivalent book diode 6BG CP Clare RELAY cp-clare 1981 japanese transistor CP Clare book cook
Text: rectifier Darlington transistor Optocoupler that can function as a ring detector (Full Wave) or loop , rectifier Darlington transistor for electronic inductor "dry" circuits Current detector for ring signal or , - UNITS ^RM S For detailed information on all CP Clare Products ask for our Data Book . CP , ) Transfer Characteristics of Single Transistor Detector (Typical) 11) 120 < 100 £ 80 £ 3 60 O o ë o 40 Transfer Characteristics of Darlington Transistor (Typical) x -r 4 n 1^=1OpA r . .f


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PDF 1TC137P ITC137P ITC137P, 16-pin ITC137P free all transistor equivalent book free transistor equivalent book diode 6BG CP Clare RELAY cp-clare 1981 japanese transistor CP Clare book cook
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